CN1288480C - Semi-penetration semi-reflection type LCD device - Google Patents
Semi-penetration semi-reflection type LCD device Download PDFInfo
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Abstract
The present invention relates to a semi-penetration semi-reflection type liquid crystal device which is mainly composed of an active element array base board, an opposite base board, a liquid crystal layer and a reflection board. Liquid crystal molecules in a penetration region are driven by penetration type picture element electrodes and common electrodes; liquid crystal molecules in a reflection region are driven by penetration type picture element electrodes and auxiliary electrodes on the active element array base board or the opposite base board. The change of effective phase difference in the reflection region and the penetration region is controlled by the direction of an applied electric field under the condition of a single crystal hole interval so as to optimize the light utilization efficiency of the reflection region and the penetration region.
Description
Technical field
The invention relates to a kind of semi-penetrated semi-reflected liquid crystal display (transflective LCD), and particularly relevant for a kind of semi-penetrated semi-reflected liquid crystal display with single bug hole spacing (single cell gap).
Background technology
At improving rapidly of multimedia society, be indebted to the tremendous progress of semiconductor element or man-machine display device mostly.With regard to display, (Cathode Ray Tube CRT) because of having excellent display quality and its economy, monopolizes monitor market in recent years to cathode-ray tube (CRT) always.Yet, operate the environment of most terminating machine/display equipments on the table for the individual, or with the incision of the viewpoint of environmental protection, if predicted with the trend of saving the energy, cathode-ray tube (CRT) is because of still existing a lot of problems in space utilization and the energy resource consumption, and can't effectively provide solution for the demand of light, thin, short, little and low consumpting power.Therefore, the Thin Film Transistor-LCD (TFT-LCD) with advantageous characteristic such as high image quality, space utilization efficient are good, low consumpting power, low radiation becomes the main flow in market gradually.
General LCD can be divided into penetration, reflective, and the semi-penetration, semi-reflective three major types, and its The classification basis is the utilization of light source and the difference of array base palte (array).Wherein, penetrating LCD mainly be with backlight (back light) as light source, the pixel electrode on its array base palte is that transparency electrode penetrates in order to backlight; Reflective liquid-crystal display mainly is as light source with front light-source (front light) or external light source, pixel electrode on its array base palte is that metal or other have the reflecting electrode of good reflection characteristic material, is suitable for front light-source or external light source reflection; And semi-penetrated semi-reflected liquid crystal display can utilize backlight and external light source to show simultaneously, picture element on it can be divided into penetration region and reflector space, have through electrode on the penetration region and penetrate, and have the reflecting electrode that is suitable for the external light source reflection on the reflector space in order to backlight.
Semi-penetrated semi-reflected liquid crystal display with Normally Black kenel is an example, do not applying under the voltage condition, penetration region and reflector space are all dark attitude, and when penetration region and reflector space will be converted to the brightest state by dark attitude, the phase differential of penetration region changes needs ± λ/2, and the phase differential of reflector space changes needs ± λ/4.Yet, under the condition of single bug hole spacing (single cell gap), and can't satisfy above-mentioned phase differential variation simultaneously, so the light utilization ratio of penetration region and reflector space also can't reach maximum simultaneously.Because the semi-penetrated semi-reflected liquid crystal display of single bug hole spacing is still restricted on display quality, therefore, some semi-penetrated semi-reflected liquid crystal displays with dual bug hole spacing (dual cell gap) are suggested in succession, and it is not optimized problem that the design that has different bug hole spacings by penetration region and reflector space can overcome the light utilization ratio.
Figure 1A illustrates the diagrammatic cross-section that has the semi-penetrated semi-reflected liquid crystal display of dual bug hole spacing for existing.Please refer to Figure 1A, the semi-penetrated semi-reflected liquid crystal display 100 with dual bug hole spacing is made of an active component array base board 102, a subtend substrate 104 and a liquid crystal layer 106.Have in the semi-penetrated semi-reflected liquid crystal display 100 of dual bug hole spacing, bug hole spacing on the penetration region T is controlled to be d, and the bug hole spacing on the reflector space R is controlled to be d/2, so liquid crystal layer 106 thickness on the penetration region T are d, and liquid crystal layer 106 thickness on the reflector space R are d/2.Wherein, bug hole spacing or liquid crystal layer 106 thickness d must satisfy phase differential change (Δ n.d)=± relational expression of λ/2.So, 106 phase difference variableizations that can reach of liquid crystal layer by two kinds of different-thickness (d, d/2) be respectively ± λ/2 and ± λ/4.
Figure 1B illustrates layout (layout) synoptic diagram that has the semi-penetrated semi-reflected liquid crystal display of dual bug hole spacing for existing.By among Figure 1B as can be known, dispose plurality of scanning wirings 200 and many data distributions 202 on the active component array base board 102, be to constitute a picture element zone 212 between adjacent scan wiring 200 and the adjacent data distribution 202, and dispose an active member 204, a penetration electrode 206 and a reflective electrode 208 on the picture element zone 212.Wherein, penetration electrode 206 be on the picture element zone 212 that is disposed at partly forming a penetration region T, and reflective electrode 208 is to form a reflector space R on the picture element zone 212 that is disposed at beyond the penetration region T.
Because the penetration electrode 206 in the same picture element zone 212 is to be electrically connected to each other with reflective electrode 208, the penetration electrode 206 in the same picture element zone 212 can be controlled by same active member 204 with reflective electrode 208.In addition, existing common active member 204 for example is that thin film transistor (TFT) (TFT), diode etc. can be driven by scan wiring 200 and data distribution 202, and the element of switching state.
Though it is the semi-penetrated semi-reflected liquid crystal display of dual bug hole spacing can make the light utilization ratio promote further, comparatively complicated in the making of panel.
Summary of the invention
Therefore, purpose of the present invention is proposing a kind of semi-penetrated semi-reflected liquid crystal display, it is under the situation of single bug hole spacing, the effective phase difference of being controlled in reflector space and the penetration region by the direction of an electric field that is applied changes, so that reflector space and penetration region light utilization ratio reach optimization.
For reaching above-mentioned purpose, the present invention discloses a kind of semi-penetrated semi-reflected liquid crystal display, it mainly is by an active component array base board, have a plurality of scan wirings and a plurality of data distributions on it, two adjacent scan wiring and data distributions constitute a picture element zone, wherein has an active member on the picture element zone, an one penetration electrode and a reflecting plate, active member is to be driven by scan wiring and data distribution, the penetration electrode is to be disposed at the picture element zone of part to form a penetration region, and reflecting plate is to be disposed at penetration region picture element zone in addition, forming a reflector space, and penetration electrode and active member electrically connect; One subtend substrate disposes a plurality of common electrodes and a plurality of auxiliary electrode on it, wherein common electrode is to be positioned on the penetration electrode, and auxiliary electrode is to be positioned on this reflecting plate; One liquid crystal layer, be to be formed between active component array base board and the subtend substrate, and has identical thickness in penetration region and reflector space, wherein dispose one first alignment film between liquid crystal layer and the active component array base board, and also dispose one second alignment film between liquid crystal layer and the subtend substrate; Polaroid on one is the outside that is disposed at active component array base board; And polaroid once, be the outside that is disposed at this subtend substrate.
Wherein this active component array base board be for thin-film transistor array base-plate, diode array substrate one of them.
Wherein more dispose a plurality of color filter films on this subtend substrate, the position of those color filter films is corresponding to those picture element zones.
Wherein also comprise one first retardation plate, this first retardation plate is disposed on this between the polaroid and this active component array base board.
Wherein also comprise one second retardation plate, this second retardation plate is disposed between this time polaroid and this active component array base board.
Simultaneously, the present invention proposes the another kind of semi-penetrated semi-reflected liquid crystal display of implementing aspect, it mainly is by an active component array base board, have a plurality of scan wirings and a plurality of data distributions on it, two adjacent scan wiring and data distributions are to constitute a picture element zone, wherein the picture element zone has an active member and a penetration electrode, active member is to be driven by scan wiring and data distribution, the penetration electrode is disposed on the picture element zone, forming a penetration region, and electrically connect with active member; One subtend substrate disposes a plurality of common electrodes and a plurality of auxiliary electrode on it, wherein common electrode is positioned on the penetration electrode, and auxiliary electrode is to be positioned at penetration electrode zone in addition; One reflecting plate is the outside that is disposed at active component array base board, to form a reflector space; One liquid crystal layer, be to be disposed between active component array base board and the subtend substrate, and has identical thickness in penetration region and reflector space, wherein dispose one first alignment film between liquid crystal layer and the active component array base board, and also dispose one second alignment film between liquid crystal layer and this subtend substrate; Polaroid on one is the outside that is disposed at active component array base board; And polaroid once, be the outside that is disposed at the subtend substrate.
The present invention also proposes another kind of semi-penetrated semi-reflected liquid crystal display, its main member comprises: an active component array base board, have a plurality of scan wirings and a plurality of data distributions on it, two adjacent scan wiring and data distributions are to constitute a picture element zone, wherein has an active member on the picture element zone, one reflective electrode and an auxiliary electrode, active member is to be driven by scan wiring and data distribution, wherein reflective electrode is the picture element zone that is disposed at part, to form a reflector space, and the picture element zone except that reflector space can be considered a penetration region, and reflective electrode and active member electric connection; One subtend substrate disposes a plurality of common electrodes on it, wherein common electrode is to be positioned on the reflective electrode; One liquid crystal layer, be formed between active component array base board and the subtend substrate, and have identical thickness in penetration region and reflector space, wherein dispose one first alignment film between liquid crystal layer and the active component array base board, and also dispose one second alignment film between liquid crystal layer and the subtend substrate; Polaroid on one is the outside that is disposed at active component array base board; And polaroid once, be the outside that is disposed at the subtend substrate.
Wherein this active component array base board be for thin-film transistor array base-plate, diode array substrate one of them.
Wherein more dispose a plurality of color filter films on this subtend substrate, the position of those color filter films is corresponding to those picture element zones.
Wherein also comprise: polaroid on is the outside that is disposed at this active component array base board; And polaroid once, be the outside that is disposed at this subtend substrate.
Wherein also comprise: one first retardation plate, this first retardation plate are disposed on this between the polaroid and this active component array base board: and one second retardation plate, this second retardation plate is disposed between this time polaroid and this active component array base board.
In preferred embodiment of the present invention, active component array base board can be a thin-film transistor array base-plate or diode array substrate one of them.In addition, the present invention also can do colored the demonstration, and for example configurable position and the corresponding color filter film in picture element zone promptly constitute a colored filter on the subtend substrate.
In addition, in a preferred embodiment, can be between last polaroid and active component array base board for example configurable one first retardation plate, and at for example configurable one second retardation plate between polaroid and the active component array base board down.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below, wherein:
Figure 1A illustrates the diagrammatic cross-section into the semi-penetrated semi-reflected liquid crystal display of known twin crystal cave spacing;
Figure 1B illustrates the schematic layout pattern into the semi-penetrated semi-reflected liquid crystal display of known twin crystal cave spacing;
Fig. 2 A and Fig. 2 B illustrate and are the diagrammatic cross-section according to the first embodiment of the invention semi-penetrated semi-reflected liquid crystal display;
Fig. 3 illustrates and is the schematic layout pattern according to the first embodiment of the invention semi-penetrated semi-reflected liquid crystal display;
Fig. 4 A and Fig. 4 B illustrate and are the diagrammatic cross-section according to the second embodiment of the invention semi-penetrated semi-reflected liquid crystal display;
Fig. 5 illustrates and is the schematic layout pattern according to the second embodiment of the invention semi-penetrated semi-reflected liquid crystal display;
Fig. 6 A and Fig. 6 B illustrate and are the diagrammatic cross-section according to the third embodiment of the invention semi-penetrated semi-reflected liquid crystal display; And
Fig. 7 illustrates and is the schematic layout pattern according to the third embodiment of the invention semi-penetrated semi-reflected liquid crystal display.
Embodiment
First embodiment
Fig. 2 A and Fig. 2 B illustrate and are the diagrammatic cross-section according to the first embodiment of the invention semi-penetrated semi-reflected liquid crystal display.Please refer to Fig. 2 A, in the present embodiment, semi-penetrated semi-reflected liquid crystal display is made of an active component array base board 400, a subtend substrate 300 and a liquid crystal layer 500.Wherein, have a plurality of picture elements zone on the active component array base board 400, and, an active member (not illustrating), a penetration electrode 402 and a reflecting plate 404 disposed on each picture element zone.Wherein, active member (not illustrating) and penetration electrode 402 be on the picture element zone that is disposed at partly forming a penetration region T, and reflecting plate 404 is to form a reflector space R on the picture element zone 212 that is disposed at beyond the penetration region T.Specifically, penetration electrode 402 does not electrically connect with reflecting plate 404.
Dispose a plurality of common electrodes 302 and a plurality of auxiliary electrode 304 on the subtend substrate 300.Wherein, common electrode 302 is to be positioned at penetration electrode 402 tops, and auxiliary electrode 304 is to be positioned at reflecting plate 404 tops.In addition, 500 of liquid crystal layers are to be disposed between active component array base board 400 and the subtend substrate 300.
Yet, except active component array base board 400, subtend substrate 300 and liquid crystal layer 500, in order to reach the purpose of demonstration, subtend substrate 300 outsides can dispose blooming pieces such as first retardation plate 306, last polaroid 308, and active component array base board 400 outsides can dispose blooming pieces such as second retardation plate 406, following polaroid 408.Wherein, first retardation plate 306 for example has the phase delay effect of λ/4, and second retardation plate 406 also for example has the phase delay effect of λ/4.
Now please be simultaneously with reference to Fig. 2 A and Fig. 2 B, and when the employed liquid crystal layer 500 of present embodiment for example was negative type liquid crystal, the slow axis of liquid crystal molecule can be parallel with providing direction of an electric field.Can not present arrangement mode as Fig. 2 A applying liquid crystal molecule under the voltage condition, so the effective phase difference of liquid crystal layer 500 integral body is 0, and penetration region T and the reflector space R of this moment are all dark attitude.Yet, when penetration region T and reflector space R will be converted to the brightest state by dark attitude, present embodiment by the pressure reduction between penetration electrode 402 and the common electrode 302 provide one perpendicular to the electric field on active component array base board 400 surfaces on the liquid crystal layer 500 of penetration region T, this vertical electric field can make the left side among Liquid Crystal Molecules Alignment such as Fig. 2 B, and makes that the effective phase difference on the penetration region T is λ/2.
Because penetration electrode 402 does not electrically connect with reflecting plate 404, so the electric field on the reflector space R is by penetration electrode 402 and auxiliary electrode 304.In the present embodiment, provide one to become the oblique electric field of special angle to the liquid crystal layer 500 of reflector space R by penetration electrode 402 and pressure reduction between the auxiliary electrode 304 with active component array base board 400 surfaces, this oblique electric field can make the right side among Liquid Crystal Molecules Alignment such as Fig. 2 B, and makes that the effective phase difference on the reflector space R is λ/4.
From the above, present embodiment turns at the phase difference variable of penetration region T that (λ/2-0)=λ/2 has satisfied phase difference variable to turn to ± demand of λ/2; (λ/4-0)=λ/4 has satisfied phase difference variable to turn to ± demand of λ/4, so can reach best light utilization ratio simultaneously on penetration region T and reflector space R and the phase difference variable of reflector space R turns to.
Fig. 3 illustrates and is the schematic layout pattern according to the first embodiment of the invention semi-penetrated semi-reflected liquid crystal display.Please refer to Fig. 3, dispose plurality of scanning wirings 410 and many data distributions 412 on the active component array base board, be to constitute a picture element zone 420 between adjacent scan wiring 410 and the adjacent data distribution 412, and dispose an active member 414, a penetration electrode 402 and a reflecting plate 404 on the picture element zone 420.Wherein, active member 414 for example is that thin film transistor (TFT), diode etc. can drive the also element of switching state by scan wiring 410 and data distribution 412, penetration electrode 402 be on the picture element zone 420 that is disposed at partly forming a penetration region T, and reflecting plate 404 also is disposed on the picture element zone 420 to form a reflector space R.
Please refer to Fig. 3 equally, a penetration electrode 402 and a reflecting plate 404 do not electrically connect, so the liquid crystal molecule of reflecting plate 404 (being positioned at reflector space R) top is to be driven by the oblique electric field between penetration electrode 402 and the auxiliary electrode 304, and the liquid crystal molecule of penetration electrode 402 (being positioned at penetration region T) top is to be driven by the vertical electric field between penetration electrode 402 and the common electrode 302.
Second embodiment
Fig. 4 A and Fig. 4 B illustrate and are the diagrammatic cross-section according to the second embodiment of the invention semi-penetrated semi-reflected liquid crystal display.Please be simultaneously with reference to Fig. 4 A and Fig. 4 B, haveing the knack of this operator should know, reflecting plate 404 among first embodiment also can adopt other modes to be disposed on the active component array base board 400, present embodiment promptly proposes the another kind of design of implementing aspect, be the outside that a reflecting plate 416 is disposed at active component array base board 400, this reflecting plate 416 has the effect of reflection source (front light-source, external light source) equally.
Fig. 5 illustrates and is the schematic layout pattern according to the second embodiment of the invention semi-penetrated semi-reflected liquid crystal display.Please refer to Fig. 5, dispose plurality of scanning wirings 410 and many data distributions 412 on the active component array base board, be to constitute a picture element zone 420 between adjacent scan wiring 410 and the adjacent data distribution 412, and dispose an active member 414 and a penetration electrode 402 on the picture element zone 420.Wherein, active member 414 for example is that thin film transistor (TFT), diode etc. can drive the also element of switching state by scan wiring 410 and data distribution 412, penetration electrode 402 be on the picture element zone 420 that is disposed at partly to form a penetration region T, the part beyond the penetration region T then is considered as reflector space R.
Please refer to Fig. 5 equally, in the present embodiment, the liquid crystal molecule of reflector space R top is to be driven by the oblique electric field between penetration electrode 402 and the auxiliary electrode 304, and the liquid crystal molecule of penetration region T top is to be driven by the vertical electric field between penetration electrode 402 and the common electrode 302.
The 3rd embodiment
Fig. 6 A and Fig. 6 B illustrate and are the diagrammatic cross-section according to the third embodiment of the invention semi-penetrated semi-reflected liquid crystal display.Please refer to Fig. 6 A, with Fig. 6 B, in the present embodiment, semi-penetrated semi-reflected liquid crystal display is made of an active component array base board 400, a subtend substrate 300 and a liquid crystal layer 500.Wherein, have a plurality of picture elements zone on the active component array base board 400, and, an active member (not illustrating), a reflective electrode 430 and an auxiliary electrode 418 disposed on each picture element zone.Wherein, active member (not illustrating) and reflective electrode 430 be on the picture element zone that is disposed at partly forming a reflector space R, and the picture element zone beyond the reflector space R can be considered a penetration region T.Dispose a plurality of common electrodes 302 on the subtend substrate 300.Wherein, common electrode 302 is to be positioned at reflective electrode 430 tops.In addition, 500 of liquid crystal layers are to be disposed between active component array base board 400 and the subtend substrate 300.
The present embodiment and first embodiment are similar, among first embodiment, auxiliary electrode 304 is to be disposed on the subtend substrate 300, the liquid crystal molecule of reflector space R top is to be driven by auxiliary electrode 304 and penetration electrode 402 formed oblique electric fields, and in the present embodiment, auxiliary electrode 418 is to be disposed on the penetration region T of active component array base board 400, and therefore, the liquid crystal molecule of penetration region T top is to be driven by reflective electrode 430 and auxiliary electrode 418 formed transverse electric fields.In addition, in the present embodiment, subtend substrate 300 outsides for example dispose blooming pieces such as first retardation plate 306, last polaroid 308, and active component array base board 400 outsides for example dispose blooming pieces such as second retardation plate 406, following polaroid 408.Wherein, first retardation plate 306 for example has the phase delay effect of λ/2, and second retardation plate 406 also for example has the phase delay effect of λ/4.
The employed liquid crystal layer 500 of present embodiment for example is to adopt the mixed orientation (hybrid alignment) or the eurymeric liquid crystal of inclination orientation (oblique alignment), and the fast axle of liquid crystal molecule can be parallel with providing direction of an electric field.Can not present arrangement mode as Fig. 6 A applying liquid crystal molecule under the voltage condition, so the effective phase difference of liquid crystal layer 500 integral body is λ/4, and penetration region T and the reflector space R of this moment are all dark attitude.Yet, when penetration region T and reflector space R will be converted to the brightest state by dark attitude, present embodiment by penetration/reflection electrode 430 and common electrode 302 provide one perpendicular to the electric field on active component array base board 400 surfaces on the liquid crystal layer 500 of reflector space R, this vertical electric field can make Liquid Crystal Molecules Alignment as the left side among the 6B figure, and makes that the effective phase difference on the penetration region T is 0.
In the present embodiment, by reflective electrode 430 and auxiliary electrode 418 provide one with the rough parallel transverse electric fields in active component array base board 400 surface to the liquid crystal layer 500 of penetration region T, this transverse electric field can make the right side among Liquid Crystal Molecules Alignment such as Fig. 6 B, and makes that the effective phase difference on the penetration region T is 3 λ/4.
From the above, present embodiment turn at the phase difference variable of penetration region T (3 λ/4-λ/4)=-λ/2, satisfied phase difference variable to turn to ± demand of λ/2; And the phase difference variable of reflector space R turn to (0-λ/4)=-λ/4, satisfied phase difference variable to turn to ± demand of λ/4, so on penetration region T and reflector space R, can reach best light utilization ratio simultaneously.
Fig. 7 illustrates and is the schematic layout pattern according to the third embodiment of the invention semi-penetrated semi-reflected liquid crystal display.Please refer to Fig. 7, in the present embodiment, the liquid crystal molecule of reflector space R top is to be driven by the vertical electric field between reflective electrode 430 and the common electrode 302, and the liquid crystal molecule of penetration region T top is to be driven by the transverse electric field between reflective electrode 430 and the auxiliary electrode 418.
In the various embodiments described above of the present invention, mainly be to utilize penetration electrode, reflective electrode, common electrode and auxiliary electrode to provide different direction of an electric field and intensity in locational relativeness, and then make the effective phase difference difference to some extent of penetration region T and reflector space R top liquid crystal molecule, also make the light utilization ratio optimization of penetration region T and reflector space R thus.
In sum, semi-penetrated semi-reflected liquid crystal display of the present invention has following advantage at least:
1. semi-penetrated semi-reflected liquid crystal display of the present invention can be changed by the effective phase difference that the direction of an electric field that is applied is controlled in reflector space and the penetration region, so that reflector space and penetration region light utilization ratio reach optimization.
2. in the third embodiment of the present invention, semi-penetrated semi-reflected liquid crystal display need not made the penetration electrode in manufacturing process, can drive the liquid crystal molecule of penetration region T and reflector space R top simultaneously, so do not have problem such as processing procedure complexity.
3. so the pattern of semi-penetrated semi-reflected liquid crystal display of the present invention common electrode on the pattern (pattern) that only need revise penetration electrode on the active component array base board in the making and subtend substrate is its processing procedure and existing process-compatible.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this skill person; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (10)
1. a semi-penetrated semi-reflected liquid crystal display is characterized in that, comprises at least:
One active component array base board, have a plurality of scan wirings and a plurality of data distributions on it, two adjacent this scan wiring and this data distributions constitute a picture element zone, wherein has an active member on this picture element zone, an one penetration electrode and a reflecting plate, this active member is to be driven by this scan wiring and this data distribution, this penetration electrode is to be disposed at this picture element zone of part to form a penetration region, and this reflecting plate is to be disposed at this penetration region this picture element zone in addition, forming a reflector space, and this penetration electrode and this active member electrically connect;
One subtend substrate disposes a plurality of common electrodes and a plurality of auxiliary electrode on it, wherein this common electrode is positioned on this penetration electrode, and this auxiliary electrode is to be positioned on this reflecting plate;
One liquid crystal layer, be to be formed between this active component array base board and this subtend substrate, and has identical thickness with this reflector space in this penetration region, wherein dispose one first alignment film between this liquid crystal layer and this active component array base board, and also dispose one second alignment film between this liquid crystal layer and this subtend substrate;
Polaroid on one is the outside that is disposed at this active component array base board; And
Once polaroid is the outside that is disposed at this subtend substrate.
2. semi-penetrated semi-reflected liquid crystal display as claimed in claim 1 is characterized in that, wherein this active component array base board be for thin-film transistor array base-plate, diode array substrate one of them.
3. semi-penetrated semi-reflected liquid crystal display as claimed in claim 1 is characterized in that, wherein more disposes a plurality of color filter films on this subtend substrate, and the position of those color filter films is corresponding to those picture element zones.
4. semi-penetrated semi-reflected liquid crystal display as claimed in claim 1 is characterized in that, wherein also comprises one first retardation plate, and this first retardation plate is disposed on this between the polaroid and this active component array base board.
5. semi-penetrated semi-reflected liquid crystal display as claimed in claim 1 is characterized in that, wherein also comprises one second retardation plate, and this second retardation plate is disposed between this time polaroid and this active component array base board.
6. a semi-penetrated semi-reflected liquid crystal display is characterized in that, comprises at least:
One active component array base board, have a plurality of scan wirings and a plurality of data distributions on it, two adjacent this scan wiring and this data distributions are to constitute a picture element zone, wherein this picture element zone has an active member and a penetration electrode, this active member is to be driven by this scan wiring and this data distribution, this penetration electrode is disposed on this picture element zone, forming a penetration region, and electrically connects with this active member;
One subtend substrate disposes a plurality of common electrodes and a plurality of auxiliary electrode on it, wherein this common electrode is to be positioned on this penetration electrode, and this auxiliary electrode is to be positioned at this penetration electrode zone in addition;
One reflecting plate is the outside that is disposed at this active component array base board, to form a reflector space; And
One liquid crystal layer, be to be disposed between this active component array base board and this subtend substrate, and has identical thickness with this reflector space in this penetration region, wherein dispose one first alignment film between this liquid crystal layer and this active component array base board, and also dispose one second alignment film between this liquid crystal layer and this subtend substrate.
7. semi-penetrated semi-reflected liquid crystal display as claimed in claim 6 is characterized in that, wherein this active component array base board be for thin-film transistor array base-plate, diode array substrate one of them.
8. semi-penetrated semi-reflected liquid crystal display as claimed in claim 6 is characterized in that, wherein more disposes a plurality of color filter films on this subtend substrate, and the position of those color filter films is corresponding to those picture element zones.
9. semi-penetrated semi-reflected liquid crystal display as claimed in claim 6 is characterized in that, wherein also comprises:
Polaroid on one is the outside that is disposed at this active component array base board; And
Once polaroid is the outside that is disposed at this subtend substrate.
10. semi-penetrated semi-reflected liquid crystal display as claimed in claim 9 is characterized in that, wherein also comprises:
One first retardation plate, this first retardation plate are disposed on this between the polaroid and this active component array base board: and
One second retardation plate, this second retardation plate is disposed between this time polaroid and this active component array base board.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 02152822 CN1288480C (en) | 2002-11-25 | 2002-11-25 | Semi-penetration semi-reflection type LCD device |
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| CN 02152822 CN1288480C (en) | 2002-11-25 | 2002-11-25 | Semi-penetration semi-reflection type LCD device |
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| CN1503030A CN1503030A (en) | 2004-06-09 |
| CN1288480C true CN1288480C (en) | 2006-12-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8237897B2 (en) | 2008-05-23 | 2012-08-07 | Chimei Innolux Corporation | Transflective liquid crystal display |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4138759B2 (en) * | 2005-02-03 | 2008-08-27 | セイコーエプソン株式会社 | Liquid crystal display device and electronic device |
| TWI340846B (en) | 2006-08-04 | 2011-04-21 | Au Optronics Corp | Pixel structure of a transflective liquid crystal panel having a single gap |
| CN101231397B (en) * | 2007-01-24 | 2011-06-01 | 奇美电子股份有限公司 | Image display system |
| CN101344697B (en) * | 2008-08-29 | 2010-04-21 | 友达光电股份有限公司 | Image element structure and LCD panel |
| CN105068299B (en) * | 2015-07-27 | 2018-06-15 | 武汉华星光电技术有限公司 | A kind of display panel and liquid crystal display |
| KR102564168B1 (en) * | 2016-11-30 | 2023-08-04 | 엘지디스플레이 주식회사 | Transflective Type Liquid Crystal Display Device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8237897B2 (en) | 2008-05-23 | 2012-08-07 | Chimei Innolux Corporation | Transflective liquid crystal display |
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