CN1730716A - Novel metallic film preparation technology on liquid phase substrate surface - Google Patents
Novel metallic film preparation technology on liquid phase substrate surface Download PDFInfo
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- CN1730716A CN1730716A CN 200510060461 CN200510060461A CN1730716A CN 1730716 A CN1730716 A CN 1730716A CN 200510060461 CN200510060461 CN 200510060461 CN 200510060461 A CN200510060461 A CN 200510060461A CN 1730716 A CN1730716 A CN 1730716A
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- 239000000758 substrate Substances 0.000 title claims abstract description 62
- 239000007791 liquid phase Substances 0.000 title claims abstract description 55
- 238000005516 engineering process Methods 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000001704 evaporation Methods 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 12
- 239000010937 tungsten Substances 0.000 claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 5
- 229910052786 argon Inorganic materials 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 105
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 21
- 230000008020 evaporation Effects 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 8
- 229920002545 silicone oil Polymers 0.000 claims description 8
- 238000001883 metal evaporation Methods 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 239000002105 nanoparticle Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 238000004062 sedimentation Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 230000006911 nucleation Effects 0.000 claims description 4
- 238000010899 nucleation Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000007872 degassing Methods 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- 230000006641 stabilisation Effects 0.000 claims description 3
- 238000011105 stabilization Methods 0.000 claims description 3
- 238000010257 thawing Methods 0.000 claims description 3
- 239000006200 vaporizer Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 238000005201 scrubbing Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000007738 vacuum evaporation Methods 0.000 abstract description 4
- 238000005054 agglomeration Methods 0.000 abstract 1
- 230000002776 aggregation Effects 0.000 abstract 1
- -1 argon ions Chemical class 0.000 abstract 1
- 238000002207 thermal evaporation Methods 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 13
- 239000012528 membrane Substances 0.000 description 8
- 230000000704 physical effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Disclosed is a novel metallic film preparation technology on liquid phase substrate surface, which comprises using liquid phase material whose saturated vapor tension is lower than the vacuum evaporation pressure as substrate, employing magnetron sputtering or thermal deposition method, evaporating the metal atoms with energy of argon ions in high speed movement or tungsten filament heated by electric current, then depositing the evaporated metal atoms onto liquid phase substrate surface, finally growing metallic film having polycrystalline grain structure through diffusion, core formation, rotation and agglomeration. The film has substantially no internal stress.
Description
Technical field
The invention belongs to nano particle, nanocrystal, have the preparing technical field of the metallic film that freely supports final condition, being specifically related to the liquid phase material is substrate, the technology of preparing of preparation magnetic and non-magnetic metal film under the different base temperature.
Background technology
In the past few decades, membrane science and technical study have obtained brilliant achievement, new function film with various unique functions emerges in an endless stream, as sub-films of novel photoelectric such as huge magnetic impedance (GMR) multilayer film of finding at sophisticated superconducting thin film, the eighties grow up about the seventies superlattice film, the beginning of the nineties and the zinc oxide that occurs recent years, organic semiconductors etc., obtained using widely in high-tech areas such as modern microelectronics, information, space flight, medical treatment; Membrane theory research is (as the internal stress effect of film, diffusion, nucleation, cohesion and the membrane formation mechanism etc. of spontaneous radiation theory, atom and the cluster thereof of the associated effect of electron spinning, nanocrystal film between the multilayer film) also obtained many important breakthroughs, greatly widened membrane science and Study on Technology field, laid a solid foundation for Jie on the horizon sees the molecular device epoch.
Usually people are accustomed to adopting all kinds of solid surface as film substrate, and it not only can control the microtexture of film effectively, makes it to meet the requirement of technical project, also stabilizing films microtexture and physicals has been played crucial effect.But because lattice mismatch, film and the not first-class factor of base material thermal expansivity, therefore membrane system (especially monocrystal thin films) at the solid substrate surface growing high quality also is very restricted, and the various physical propertys of film also are subjected to the influence of substrate to a great extent.
Zhejiang University discloses a kind of employing liquid phase substrate (diffusion pump silicone oil etc.) deposition magnetic, and (Fe is Ni) with non magnetic (Au, Ag, Al, Cu) technology of metallic film [leaf Gao Xiang etc.: Phys.Rev.B54,14754 (1996); Phys.Rev.Lett., 81,622 (1998); Physics Letters A 312,119-122 (2003); Phys.Rev.B68,193403 (2003); Physics Letters A 318,457 (2003)], not only solved preferably such as lattice mismatch, film and base material thermal expansivity differ, problem such as the demoulding difficulty is big, found that also this type of film has unique physical property at aspects such as membrane formation mechanism, microstructure, the distribution of film internal stress and evolution, electronic transport characteristic, low temperature quantum effects, it is a kind of novel novel thin film that has unique microstructure and freely support final condition (internal stress free substantially).And this type of film is in general high vacuum (～10
-4Pa) under the condition, adopt ordinary methods such as vacuum-evaporation, magnetron sputtering to be prepared from, method is simple, and is with low cost, helps suitability for industrialized production.But to how the above-mentioned metallic film preparation method's of specific implementation details and key parameter are not open.Minimum sedimentation rate when for example, growing the differing materials film; The selection of liquid phase base material; Experiment synoptic diagram etc.
Summary of the invention
The magnetic with unique nano particle (or crystal grain) structure and basic internal stress free that the present invention prepares under liquid phase substrate surface and nearly room temperature condition and the purpose of non-magnetic metal film provide a kind of method that can prepare the novel metallic film with unique microstructures and unique physical effect with the vacuum evaporation method of routine, the new Application Areas of developing thin film technique, optimal preparation technology reduces industrial cost.
The present invention is to be substrate with saturated vapor pressure less than the liquid phase material of baric minimum in the vacuum chamber, adopt magnetron sputtering or hot evaporation coating method, make the atoms metal evaporation with the argon ion of high-speed motion or by the heat energy of the tungsten filament after the current flow heats, the atoms metal that is evaporated then deposits to the liquid phase substrate surface, again by diffusion, nucleation, rotation, cohesion, grow into the metallic film with polycrystalline structure, concrete processing step is as follows:
A, cleaning sanding slide glass are smeared the liquid phase material that a layer thickness is 0.1～0.2mm thereon, then with slide glass
Pack on the substrate holder of vacuum-evaporator unit, liquid level is isolated substrate and evaporation source towards evaporation source (position up and down between slide glass and the evaporation source is not limit) with baffle plate;
B, usefulness mechanical pump and molecular pump evacuated chamber to 1 * 10
-4Pa～6 * 10
-4The vacuum tightness of Pa;
C, the substrate of heating liquid phase make it temperature between 5～50 ℃, and this moment, the vapour pressure of liquid phase material was lower than the interior air pressure of vacuum chamber;
The material of d, little heating different metal evaporation source made it degasification 3 minutes, increased tungsten filament electric current or sputtering power then to the metallic substance start vaporizer, opened baffle plate after the rate stabilization to be evaporated and began the growing metal film.Adopt the speed and the thickness of crystal oscillator thickness tester and baffle controls film growth;
E, when metallic film grows into certain thickness, cut off the power supply of evaporation source, finish growth, treat the molecular pump stall after, in vacuum chamber, slowly charge into atmosphere, take out sample;
F, carry out demoulding, obtain magnetic or non-magnetic metal film with the method for smooth glass surface adhering film.
The material of different metal evaporation source of the present invention is that purity is a kind of among 99.9%～99.99% nonmagnetic substance Au, Ag, Al, Cu or magneticsubstance Fe, the Ni.
The technology of preparing of liquid phase substrate surface novel metallic film of the present invention, the gas pressure in vacuum during growing film are～6 * 10
-4Pa.
The saturated vapor pressure of liquid phase base material of the present invention is lower than the air pressure in the vacuum chamber, can adopt glass, gallium a kind of of diffusion pump silicone oil, liquid crystal, the thawing of various models.
Nominal growth velocity at liquid phase substrate surface metallic film of the present invention is: the nominal sedimentation rate 2.0nm＞f＞0.005nm/s of magnetic metallic film; Non-magnetic metal depositing of thin film speed 2.0nm＞f＞0.001nm/s.The evaporated metal atom can be attracted to the liquid phase substrate surface and can not enter among the liquid phase substrate at this moment.
Magnetic of the present invention or non-magnetic metal film have quasi-circular island and branch shape island non-crystalline state cluster structure; Along with the film nominal thickness increases, can form have netted, vesicular, the continuous film structure of nano-sized particles, nano-sized grains, its upper and lower surface is coarse and be Fractal dimension structure, grain-size is from 10
1～10
2Nm is adjustable.
Metallic film method for demoulding of the present invention is simple and easy to operate: (1) removes to adhere to the metallic film that is grown in the liquid phase substrate surface with the flat surface of the slide glass that cleans up, film just can be adsorbed on smooth slide surface tightly, after drying with acetone and washed with de-ionized water, film just by demoulding to clean smooth slide surface, what this moment, we saw is the lower surface of film; (2) up with the pellicular front of sample; Gradually sample is sunk to clean acetone liquid, film just can swim in the acetone surface, pick up film with clean smooth slide surface then, after drying with acetone and washed with de-ionized water, film just by demoulding to clean smooth slide surface, what this moment, we saw is the upper surface of film.
Technology of preparing of the present invention can adopt different types of liquid phase material, and its surface tension, viscosity factor etc. do not have special requirement.Sometimes in order to change the physical property of liquid phase substrate, the liquid phase substrate of optionally can littlely heating, but, must guarantee that the vapour pressure of liquid phase substrate is less than the air pressure in the vacuum chamber 1 * 10 no matter whether heat
-4Pa.For the structural membrane sample, the purity of evaporating materials should be better than 99.9%; And for the function film sample, the purity requirement of evaporating materials should be better than 99.99%.
Distance between evaporation source of the present invention and the substrate holder is answered 10～15cm, thereby guarantees that the liquid phase substrate can not change its physics and chemical property because of the thermal radiation of evaporation source during whole evaporation.
Wherein the slide glass purging method is as follows:
Slide glass is put into acetone to be soaked 24 hours;
Slide glass is put into ultrasonic cleaner, scrubbing one hour;
Wash repeatedly with deionized water;
At last in the vertical laminar flow clean bench with the slide glass airing.
The present invention adopts vacuum-evaporation (or magnetron sputtering) method, and (Fe is Ni) with non magnetic (Au, Ag, Al, Cu) metallic film in liquid phase substrate (diffusion pump silicone oil etc.) surface growth magnetic.The evaporated metal atom is attracted to the liquid phase substrate surface and can enter among the liquid phase substrate, their diffusions randomly, nucleation, rotation, merging, cohesion then, the final metallic film of densification continuously that forms.According to the nominal thickness difference of film, film can have quasi-circular cluster, branch shape cluster, netted, porous and shape pattern continuously, and the continuous film upper and lower surface is coarse and be Fractal dimension structure, and film is generally polycrystalline structure, and grain-size is from 10
1～10
2Nm is adjustable, and crystal grain is evenly distributed.Because this type of film is to be grown on the liquid phase substrate surface, so through after the relaxation time of several hrs, basic internal stress free in the film.
The technology of preparing of liquid phase substrate surface growing metal film of the present invention, preparation technology is simple, and cost is low; The film of being grown has unique microtexture, and grain-size is from 10 in the film
1～10
2Nm is adjustable, and is evenly distributed; Film upper and lower surface pattern is coarse Fractal dimension structure, fractal dimension D ≈ 2.2; Demoulding is simple, easily the upper and lower surface of film is studied and is used; Basic internal stress free in the film.Found multiple new physical influence at aspects such as membrane formation mechanism, microstructure, internal stress evolution, low temperature magnetic propertiess.
Description of drawings:
Fig. 1 liquid phase substrate surface vacuum evaporation deposition metallic film synoptic diagram
1 crystal oscillator thickness tester among the figure, 2 electric furnaces, 3 slide glasss, 4 liquid phase substrates, 5 baffle plates, 6 evaporated metal materials, 7 heating tungsten filaments, 8 connect molecular pump
Embodiment
Embodiment 1:
(a) with reference to Fig. 1, in the vacuum chamber of vacuum-evaporator unit, by the sanding slide glass 3 of smearing the thick liquid phase substrate 4 of one deck 0.2mm, the substrate holder that electric furnace 2 constitutes, the liquid phase substrate can be adopted glass, gallium a kind of of diffusion pump silicone oil, liquid crystal, thawing, by evaporated metal material 6, heating tungsten filament 7 constitutes evaporation sources, and the material of metal evaporation sources can adopt a kind of among nonmagnetic substance Au, Ag, Al, Cu or magneticsubstance Fe, the Ni of purity 99.9%～99.99%.Liquid level is not towards evaporation source (position up and down between them is limit) on the substrate holder, and the distance between substrate holder and the evaporation source is 10～15cm, and with baffle plate 5 they separated.Crystal oscillator thickness tester 1 is installed near the sample, cooperates evaporation source tungsten filament current control and baffle plate, is used for controlling sedimentation rate; Vacuumize by connecing molecular pump 8.
(b) with mechanical pump and molecular pump evacuated chamber to 1 * 10
-4Pa～6 * 10
-4The vacuum tightness of Pa.
(c) electric furnace heating can make the liquid phase base reservoir temperature adjustable between 5～50 ℃, and the vapour pressure of liquid phase substrate this moment is the air pressure in the vacuum chamber still;
(d) increase the tungsten filament electric current evaporated metal material is heated slightly, removed its surface adsorption gas 3 minutes.Increase the tungsten filament electric current then to the metallic substance start vaporizer.Control tungsten filament electric current is opened baffle plate and is begun the growing metal film after the rate stabilization to be evaporated, and according to practical situation control growth for Thin Film speed and thickness; The nominal sedimentation rate 2.0nm＞f＞0.005nm/s of magnetic metallic film; Non-magnetic metal depositing of thin film speed 2.0nm＞f＞0.001nm/s.
(e) when metallic film grows into certain thickness, cut off the tungsten filament power supply, finish growth, treat the molecular pump stall after, in vacuum chamber, slowly charge into atmosphere, take out sample.
(f) with the sample demoulding to preprepared clean smooth substrate surface, and dry with acetone and washed with de-ionized water.Film can have quasi-circular cluster, branch shape cluster, netted, porous and shape pattern continuously, and the continuous film upper and lower surface is coarse and be Fractal dimension structure, and film is a polycrystalline structure, and grain-size is from 10
1～10
2Nm is adjustable, and the polycrystalline metallic film homogeneous grain size of preparation gained is controlled, and upper and lower surface is coarse and be branch dimension pattern, internal stress free almost in the film.
Adopt radio frequency magnetron sputtering method at liquid phase substrate surface deposited iron film:
(a) in the vacuum chamber of rf magnetron sputtering, diffusion pump silicone oil is adopted in the liquid phase substrate, sputtering target material (being thin-film material) is for purity equals 99.99%, diameter is that 81.5mm, thickness are Armco magnetic iron (Fe) sheet material of 0.5mm, distance=10cm between substrate holder and the sputtering source, and with baffle plate they are separated.
(b) with mechanical pump and molecular pump evacuated chamber to 6 * 10
-4The vacuum tightness of Pa.
(c) the electric furnace heating can make silicone oil adjustable between 5～50 ℃, and the vapour pressure of silicone oil substrate this moment is lower than the air pressure in the vacuum chamber;
(d) increase sputtering power to the 10W, make iron target open surface degassing and pre-sputter 3 minutes.Open baffle plate then and begin plated film.The articles for use thickness tester control growth for Thin Film speed of shaking is 0.005nm/s; Grain-size is from 10 in the film
1～10
2Nm is adjustable;
(e) when metallic film grows into certain thickness, cut off shielding power supply and argon gas source, finish growth, treat the molecular pump stall after, in vacuum chamber, slowly charge into atmosphere, take out sample.
(f) with the iron thin film demoulding to preprepared clean smooth substrate surface, and dry with acetone and washed with de-ionized water.The Armco magnetic iron film of preparation gained, upper and lower surface is coarse and be branch dimension pattern, internal stress free almost in the film.
Claims (9)
1, a kind of technology of preparing of liquid phase substrate surface novel metallic film, the liquid phase material that it is characterized in that being lower than with saturated vapor pressure the vacuum chamber internal gas pressure is substrate, adopt magnetron sputtering or hot evaporation coating method, make the atoms metal evaporation with the argon ion of high-speed motion or by the heat energy of the tungsten filament after the current flow heats, the atoms metal that is evaporated then deposits to the liquid phase substrate surface, by diffusion, nucleation, rotation, cohesion, grow into the metallic film with polycrystalline structure again, processing step is as follows:
A, cleaning sanding slide glass are smeared the liquid phase material that a layer thickness is 0.1～0.2mm thereon, as the liquid phase substrate.Then slide glass is packed on the substrate holder of vacuum-evaporator unit, liquid level is isolated substrate and evaporation source towards evaporation source with baffle plate;
B, usefulness mechanical pump and molecular pump evacuated chamber to 1 * 10
-4Pa～6 * 10
-4The vacuum tightness of Pa;
C, the substrate of heating liquid phase make it temperature between 5～50 ℃, and this moment, the vapour pressure of liquid phase material was lower than the interior air pressure of vacuum chamber;
The material of d, little heating different metal evaporation source made it degasification after 3 minutes, increase tungsten filament electric current or sputtering power to the metallic substance start vaporizer, open baffle plate after the rate stabilization to be evaporated and begin the growing metal film, adopt the speed and the thickness of crystal oscillator thickness tester and baffle controls film growth;
E, when metallic film grows into certain thickness, cut off the power supply of evaporation source, finish growth, treat the molecular pump stall after, in vacuum chamber, slowly charge into atmosphere, take out sample;
F, carry out demoulding, obtain magnetic or non-magnetic metal film with the method for smooth glass surface adhering film.
2, the technology of preparing of liquid phase substrate surface novel metallic film according to claim 1 is characterized in that the evaporation source of described vacuum-evaporator unit and the distance between the substrate holder are 10～15cm.
3, the technology of preparing of liquid phase substrate surface novel metallic film according to claim 1, the material that it is characterized in that described different metal evaporation source are that purity is a kind of of 99.9%～99.99% nonmagnetic substance Au, Ag, Al, Cu or magneticsubstance Fe, Ni.
4, the technology of preparing of liquid phase substrate surface novel metallic film according to claim 1, the saturated vapor pressure that it is characterized in that described liquid phase base material is lower than the vacuum chamber internal gas pressure, a kind of for the glass of the diffusion pump silicone oil of various models, liquid crystal, thawing, gallium.
5, the technology of preparing of liquid phase substrate surface novel metallic film according to claim 1 is characterized in that the cleaning step of described slide glass:
Slide glass is put into acetone to be soaked 24 hours;
Slide glass is put into ultrasonic cleaner, scrubbing one hour;
Wash repeatedly with deionized water;
In the vertical laminar flow clean bench, slide glass is carried out drying treatment at last.
6, the technology of preparing of liquid phase substrate surface novel metallic film according to claim 1, the gas pressure in vacuum when it is characterized in that growing film is～6 * 10
-4Pa.
7, the technology of preparing of liquid phase substrate surface novel metallic film according to claim 1 is characterized in that the sedimentation rate 2.0nm/s＞f＞0.005nm/s of described magnetic metallic film; Non-magnetic metal depositing of thin film speed 2.0nm/s＞f＞0.001nm/s.
8, the technology of preparing of liquid phase substrate surface novel metallic film according to claim 1 is characterized in that described magnetic or non-magnetic metal film have quasi-circular island and branch shape island non-crystalline state cluster; Along with the film nominal thickness increases, form has netted, vesicular, the continuous film structure of nano-sized particles, nano-sized grains, its upper and lower surface is coarse and be Fractal dimension structure, fractal dimension D ≈ 2.2, grain-size is from 10
1～10
2Nm is adjustable.
9, the technology of preparing of liquid phase substrate surface novel metallic film according to claim 1, it is characterized in that described metallic film method for demoulding: (1) removes to adhere to the metallic film that is grown in the liquid phase substrate surface with the flat surface of the slide glass that cleans up, film just can be adsorbed on smooth slide surface tightly, after drying with acetone and washed with de-ionized water, film just by demoulding to clean smooth slide surface, what this moment, we saw is the lower surface of film; (2) up with the pellicular front of sample, gradually sample is sunk to clean acetone liquid, film just can swim in the acetone surface, pick up film with clean smooth slide surface then, after drying with acetone and washed with de-ionized water, film just by demoulding to clean smooth slide surface, what this moment, we saw is the upper surface of film.
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|---|---|---|---|
| CNB2005100604619A CN100366786C (en) | 2005-08-23 | 2005-08-23 | Novel metallic film preparation technology on liquid phase substrate surface |
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| CN1730716A true CN1730716A (en) | 2006-02-08 |
| CN100366786C CN100366786C (en) | 2008-02-06 |
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ID=35963137
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104073774A (en) * | 2014-03-28 | 2014-10-01 | 能源X控股有限公司 | Device for preparing nano thin film in porous structure and application of device |
| CN105671510A (en) * | 2016-04-07 | 2016-06-15 | 乔宪武 | Liquid phase substrate deposition metal film separation device |
| WO2016095275A1 (en) * | 2014-12-19 | 2016-06-23 | 深圳市华星光电技术有限公司 | Vapor deposition apparatus |
| CN110016650A (en) * | 2019-03-27 | 2019-07-16 | 吉林大学 | A kind of method that original position regulates and controls film surface roughening rate on a large scale |
| CN111748796A (en) * | 2019-03-29 | 2020-10-09 | 皮考逊公司 | Method of coating an evaporative substrate and producing an at least partially encapsulated substrate, apparatus and product thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1024146C (en) * | 1990-03-22 | 1994-04-06 | 四川大学 | Process for preparing film of multicomponent metal oxide |
| TW574407B (en) * | 2002-06-18 | 2004-02-01 | Hannstar Display Corp | Magnetron oscillatory scanning-type sputtering device |
-
2005
- 2005-08-23 CN CNB2005100604619A patent/CN100366786C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104073774A (en) * | 2014-03-28 | 2014-10-01 | 能源X控股有限公司 | Device for preparing nano thin film in porous structure and application of device |
| WO2016095275A1 (en) * | 2014-12-19 | 2016-06-23 | 深圳市华星光电技术有限公司 | Vapor deposition apparatus |
| CN105671510A (en) * | 2016-04-07 | 2016-06-15 | 乔宪武 | Liquid phase substrate deposition metal film separation device |
| CN110016650A (en) * | 2019-03-27 | 2019-07-16 | 吉林大学 | A kind of method that original position regulates and controls film surface roughening rate on a large scale |
| CN110016650B (en) * | 2019-03-27 | 2021-07-16 | 吉林大学 | Method for regulating and controlling surface roughening rate of film in situ in large range |
| CN111748796A (en) * | 2019-03-29 | 2020-10-09 | 皮考逊公司 | Method of coating an evaporative substrate and producing an at least partially encapsulated substrate, apparatus and product thereof |
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| Publication number | Publication date |
|---|---|
| CN100366786C (en) | 2008-02-06 |
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