CN1807676A - Process for preparing functional film on fused substrate surface - Google Patents
Process for preparing functional film on fused substrate surface Download PDFInfo
- Publication number
- CN1807676A CN1807676A CN 200610049552 CN200610049552A CN1807676A CN 1807676 A CN1807676 A CN 1807676A CN 200610049552 CN200610049552 CN 200610049552 CN 200610049552 A CN200610049552 A CN 200610049552A CN 1807676 A CN1807676 A CN 1807676A
- Authority
- CN
- China
- Prior art keywords
- film
- substrate
- substrate surface
- temperature
- preparing functional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a functional film preparing method of molten substrate surface, which is characterized by the following: adopting the material of solid-phase low-melting point and low vapor pressure at ambient temperature; elevating substrate temperature before depositing film; melting film for liquid phantom background; evaporating film material atom and depositing to liquid level substrate surface with the method of magnetron sputtering or heat evaporation; adopting the method of diffusing, formatting the core, rolling, aggregating to grow functional film of characteristic grain arrangement; reducing substrate temperature to room temperature after finishing aggradation; curing background; keeping microconfiguration of film stable. The method simplifies technique, which reduces the cost.
Description
Technical field
The invention belongs to the preparing technical field that nano particle, nanocrystal, film and substrate high strength adhere to, have the function film of feature microtexture, be specifically related to a kind of new film preparing technology: being that the low melting point low-steam pressure material of solid phase is substrate under the room temperature; Before the deposit film, the rising base reservoir temperature becomes the liquid phase substrate with its fusion; After treating that deposition finishes, make base reservoir temperature freely be cooled to room temperature, substrate is solidified, thereby the microtexture of film is stably kept.
Background technology
In the past few decades, membrane science and technical study have obtained brilliant achievement, new function film with various unique functions emerges in an endless stream, as the sub-film of novel photoelectric such as sophisticated huge magnetic impedance (GMR) multilayer film and the zinc oxide that occurs recent years, organic semiconductor etc. at sophisticated superconducting thin film, the eighties grow up about the seventies superlattice film, beginning of the nineties, obtained using widely in high-tech areas such as modern microelectronics, information, space flight, medical treatment; Membrane theory research is (as the internal stress effect of film, diffusion, nucleation, cohesion and the membrane formation mechanism etc. of spontaneous radiation theory, atom and the cluster thereof of the associated effect of electron spinning, nanocrystal film between the multilayer film) also obtained many important breakthroughs, greatly widened membrane science and Study on Technology field, laid a solid foundation for Jie on the horizon sees the molecular device epoch.
Usually people are accustomed to adopting all kinds of solid surface as film substrate, and it not only can control the microtexture of film effectively, makes it to meet the requirement of technical project, also stabilizing films microtexture and physicals has been played crucial effect.But because lattice mismatch, film and the not first-class factor of base material thermal expansivity, therefore membrane system (especially monocrystal thin films) at the solid substrate surface growing high quality also is very restricted, and the various physical propertys of film also are subjected to the influence of substrate to a great extent.
In in the past nearly ten years, (Fe is Ni) with non magnetic (Au, Ag, Al, Cu) technology of metallic film [leaf Gao Xiang etc.: Phys.Rev.B54,14754 (1996) to adopt liquid phase substrate (diffusion pump silicone oil etc.) deposition magnetic; Phys.Rev.Lett., 81,622 (1998); Physics Letters A 312,119 (2003); Phys.Rev.B68,193403 (2003); Physics Letters A 318,457 (2003)] be subject to the people's attention, this technology not only solved preferably such as lattice mismatch, film and base material thermal expansivity differ, problem such as the demoulding difficulty is big, successfully go out nano particle, polycrystalline and monocrystal thin films [Xiangdong Liu etc.: Journal of Crystal Growth at liquid phase substrate surface and growth inside, 269,542 (2004); M.Voigt etc.: Physical Review Letters, 91,026103 (2003)], found that also this type of film has unique physical property at aspects such as membrane formation mechanism, microstructure, the distribution of film internal stress and evolution, electronic transport characteristic, low temperature quantum effects, it is a kind of novel novel thin film that has unique microstructures and freely support final condition (internal stress free substantially).This type of film is in general high vacuum (～10
-4Pa) under the condition, adopt ordinary methods such as vacuum-evaporation, magnetron sputtering to be prepared from, so the preparation method is simple, with low cost, help suitability for industrialized production.Yet because the flow characteristics of liquid phase substrate, the structural stability problem of this type of film is very outstanding, has greatly limited the large-scale application of this type of film.
Zhejiang University discloses technology [the leaf Gao Xiang etc.: Phys.Rev.B63 of a kind of employing molten substrate (low melting glass) depositing metal films, 125405 (2001)], demonstrated a some effective stablizing this type of novel thin film system microtexture and physicals.But concrete preparation method's details, thin-film material are selected and key parameter is not open, for example, and the minimum sedimentation rate during growth differing materials film; The intensification of substrate and soaking time; The selection of liquid phase base material; Experiment synoptic diagram etc. are implemented this method and need be passed through creative work.
Summary of the invention
The purpose of this invention is to provide and a kind ofly can have the method for the new function film of unique microstructures and physical influence in fusion liquid phase substrate surface preparation, and the film microstructure and the physical property that generate at fused liquid phase substrate surface can keep steadily in the long term with the vacuum-evaporation or the magnetron sputtering technique of routine.Be the large-scale application of this type of film, developing thin film technique new Application Areas, optimal preparation technology reduces industrial cost etc. and lays the first stone.
The preparation method of molten substrate function of surface film provided by the invention, employing is substrate for the low melting point low melt vapour pressure material of solid phase at room temperature; Before the deposit film, the rising base reservoir temperature becomes the liquid phase substrate with its fusion, and its saturated vapor pressure should be less than the vacuum chamber baric minimum; Adopt magnetron sputtering or thermal evaporation method then, have the function film of nano particle (or crystal grain) structure in the molten substrate surface growth; After deposition finished, base reservoir temperature freely was cooled to room temperature, and substrate is solidified.Concrete processing step is as follows:
A, will be at room temperature place on the slide glass of cleaning sanding, then for the base material of the low melting point low melt vapour pressure of solid phase
Slide glass is put on the substrate holder of vacuum chamber, substrate holder is below evaporation source or sputtering source, and the film substrate surface should be towards evaporation source or sputtering source, and the distance between substrate holder and evaporation source or the sputtering source is 8～15cm, and with baffle plate they is isolated;
B, usefulness mechanical pump and molecular pump evacuated chamber to 1 * 10
-4Pa～6 * 10
-4The vacuum tightness of Pa;
C, heat substrate with electric furnace, make the melting temperature of temperature a little more than substrate, substrate is melt into liquid phase, and its vapour pressure should be lower than the baric minimum in the vacuum chamber, keeps substrate constant temperature then;
D, the different evaporation source thin-film material of little heating, made it degasification 3 minutes, increase tungsten filament electric current or sputtering power then to the thin-film material start vaporizer, open baffle plate after the rate stabilization to be evaporated and begin growing film, adopt the speed and the film thickness of crystal oscillator thickness tester and baffle controls film growth;
E, when film growth when certain nominal thickness, cut off the power supply of evaporation source or sputtering source, close baffle plate, finish growth; Then base reservoir temperature is kept Δ t (≈ 0～2 hour) to cut off furnace power after the time again, allow substrate freely cool off;
F, when treating that base reservoir temperature drops near room temperature, substrate is solidified, and cuts off molecular pump and mechanical pump power supply, slowly charges into atmosphere after half an hour in vacuum chamber, takes out sample, promptly obtains the function film that the present invention makes.
Different evaporation source thin-film material of the present invention is that purity is a kind of in 99.9%～99.99% nonmagnetic substance (Au, Ag, Al, Cu), magneticsubstance (Fe, Co, Ni) and other the polynary complex function thin film material.For the structural membrane sample, the purity of evaporating materials should be better than 99.9%; And for the function film sample, the purity of evaporating materials is better than 99.99%.
The technology of preparing of the molten substrate surface growth new function film at the low melting point low-steam pressure of the present invention, the residual gas air pressure during growing film in the vacuum chamber is 1 * 10
-4～6 * 10
-4Pa.
It is solid phase that the base material of low melting point low-steam pressure of the present invention at room temperature requires, saturated vapor pressure when molten state should be lower than the baric minimum in the vacuum chamber, can adopt a kind of in the material such as low melting glass, low melting point macromolecular material, gallium of multiple model.
The nominal growth velocity f of function of the present invention (magnetic or non magnetic) film is: 2.0nm＞f＞0.001nm/s, deposition and atomic can be attracted to the liquid phase substrate surface that is in molten state and can not enter among the substrate at this moment.
(magnetic or non magnetic) of the present invention function film has quasi-circular island and branch shape island non-crystalline state cluster structure; Along with the film nominal thickness increases, can form and have netted, vesicular or successive polycrystal film structure, wherein can have the elementide particle of nano-scale or the crystalline-granular texture of nano-scale, grain-size is from 10
0～10
2Nm is adjustable; The microtexture of film and Δ t's is big or small closely related.
Technology of preparing of the present invention can adopt the base material of different types of low melting point low-steam pressure.Requiring substrate when room temperature is solid phase; When being in molten state, the surface tension of substrate, viscosity factor etc. do not have special requirement.Sometimes in order to change the physical property of molten substrate when the deposit film, optionally can change base reservoir temperature, but the vapour pressure that must guarantee to be in the substrate under the molten state is less than the baric minimum in the vacuum chamber, promptly less than 1 * 10
-4Pa.
Look actual the service requirements of film sample, can adopt the insulation of different types of low melting point low-steam pressure or non-insulating material to make film substrate.
Distance between evaporation source of the present invention and the substrate holder generally should be greater than 8cm, thereby guarantees that molten substrate can not make its vapour pressure surpass the vacuum chamber internal gas pressure because of the thermal radiation of evaporation source during whole evaporation.
Sanding slide glass purging method among the present invention is as follows:
The sanding slide glass is put into acetone to be soaked 24 hours;
The sanding slide glass is put into ultrasonic cleaner, scrubbing one hour;
Wash repeatedly with deionized water;
At last in the vertical laminar flow clean bench with sanding slide glass airing.
The preparation method of molten substrate function of surface film of the present invention, it is characterized in that (1) is when deposit film, because the electric furnace heating, substrate Yin Wendu raises and becomes liquid phase (or glue phase) substrate, so the microstructure of film mainly forms at the liquid phase substrate surface; (2) after deposition finishes,, make the atom that is deposited, grow into (magnetic or non magnetic) function film with unique nano particle (or crystal grain) structure in the diffusion of liquid phase substrate surface, nucleation, rotation, cohesion with furnace temperature retention time Δ t; (3) after deposition finished, base reservoir temperature freely was cooled to room temperature, and substrate is a solid phase by liquid phase transition, and the microtexture of function film can obtain maintenance steady in a long-term.
The present invention adopts vacuum-evaporation or magnetically controlled sputter method, at the molten substrate surface growth function film of different types of low melting point low-steam pressure.Evaporation atom is attracted to the liquid phase substrate surface that is in molten state and can enter among fusion (liquid phase) substrate, their diffusions randomly, nucleation, rotation, merging, cohesion then, the final function film of densification continuously that forms.According to the nominal thickness difference of film, film can have the quasi-circular nanocluster, divides dendritic cluster, netted, porous and shape pattern continuously, and continuous film is generally polycrystalline structure, and grain-size is from 10
0～10
2Nm is adjustable, and grain size distributes evenly whole.After treating that temperature is reduced to room temperature, the microtexture of substrate and film is kept by steady in a long-term because of curing, and the adhesive power between film and the substrate surpasses the analog value that generally is deposited on the solid phase substrate upper film.
The present invention is in the technology of preparing of molten substrate surface growth function film, and preparation technology is simple, and is with low cost; The film of being grown has unique microtexture and physicals, and grain-size is adjustable in the film; The microtexture of film can keep steadily in the long term, and therefore the various characteristics (as membrane formation mechanism, microtexture, internal stress evolution, photoelectric characteristic, low temperature magnetic properties etc.) that is easy to this type of film is furtherd investigate.Compare with traditional film that is grown in the liquid phase substrate surface, this type of membrane system had both had similar unique microstructures, had overcome the unsettled defective of liquid phase substrate surface film microstructure again, for the large-scale application of this type of novel thin film has been laid solid foundation.
Description of drawings:
Fig. 1 molten substrate surface vacuum hydatogenesis function film synoptic diagram
Among the figure: 1 crystal oscillator thickness tester, 2 electric furnaces, 3 slide glasss, the base material of 4 low melting point low melt vapour pressures, 5 baffle plates, 6 heating tungsten filaments, 7 evaporating materials, 8 connect molecular pump
Embodiment
Embodiment 1:
(a) with reference to Fig. 1, in the vacuum chamber of vacuum-evaporator unit, a small amount of low melting point and low melt vapour pressure base material 4 place on the slide glass 3 of sanding, with the substrate holder that constitutes together of electric furnace 2 of control base reservoir temperature, low melting point and low melt vapour pressure base material can adopt a kind of in low melting glass and the low melting point macromolecular material; By evaporating materials 7, heating tungsten filament 6 constitutes evaporation sources, and the material of evaporation source can adopt a kind of among nonmagnetic substance Au, Ag, Al, Cu or magneticsubstance Fe, the Ni of purity 99.9%～99.99%.Substrate holder upper film basal surface is towards evaporation source, and the distance between substrate holder and the evaporation source is 8～15cm, and with baffle plate 5 they is separated.Crystal oscillator thickness tester 1 is installed near the sample, cooperates evaporation source tungsten filament current control and baffle plate, is used for controlling sedimentation rate; Vacuumize by connecing molecular pump 8.
(b) with mechanical pump and molecular pump evacuated chamber to 1 * 10
-4Pa～6 * 10
-4The vacuum tightness of Pa.
(c) the electric furnace heating makes substrate be melt into the liquid phase substrate, and can accurately control its temperature, and the vapour pressure of liquid phase substrate this moment should be lower than the air pressure in the vacuum chamber.
(d) increase the tungsten filament electric current evaporating materials is heated slightly, removed its surface adsorption gas 3 minutes.Increase the tungsten filament electric current then to the evaporating materials start vaporizer.Control tungsten filament electric current is opened baffle plate after the rate stabilization to be evaporated and is begun growing film, and according to practical situation control growth for Thin Film speed and thickness; The scope of the nominal sedimentation rate f of film is: 2.0nm＞f＞0.001nm/s.
(e) when certain thickness is arrived in film growth, cut off the tungsten filament power supply, finish growth; And then keep base reservoir temperature Δ t (≈ 0～2 hour) to cut off furnace power after the time, allow substrate freely cool off; Treat that base reservoir temperature drops near room temperature, substrate is solidified, and cuts off molecular pump and mechanical pump power supply, after half an hour (after the molecular pump stall), slowly charges into atmosphere in vacuum chamber, takes out sample.
(f) film sample can have the quasi-circular nanocluster, divide dendritic cluster, netted, porous and shape pattern continuously, the continuous film upper and lower surface is coarse and be Fractal dimension structure, the film crystalline phase is a polycrystalline structure, grain-size is from 10
0～10
2Nm is adjustable, and the size of crystal grain is by film thickness, sedimentation rate and soaking time Δ t control in the polycrystal film of preparation gained.
Embodiment 2:
Adopt the dielectric base surface deposition gold thin film of radio frequency magnetron sputtering method in low melting point low melt vapour pressure:
(a) in the vacuum chamber of rf magnetron sputtering, substrate employing temperature of fusion is 500 ℃ a low melting point low-steam pressure glass, sputtering target material (being thin-film material) is for purity equals 99.99%, diameter is that 81.5mm, thickness are proof gold (Au) sheet material of 0.5mm, the distance of cuing open of substrate holder and sputtering target is 8cm, and with baffle plate they is separated.
(b) with mechanical pump and molecular pump evacuated chamber to 6 * 10
-4The vacuum tightness of Pa.
(c) with electric furnace heating substrate to 510 ℃, make substrate of glass be melt into liquid phase (colloid) substrate, its vapour pressure is lower than the air pressure in the vacuum chamber.
(d) increase sputtering power to the 10W, make gold target open surface degassing and pre-sputter 3 minutes.Open baffle plate then and begin plated film.With crystal oscillator thickness tester control growth for Thin Film speed is 0.05nm/s.
(e) when gold thin film grows to the 20nm nominal thickness, cut off shielding power supply and argon gas source, finish growth; And then keep base reservoir temperature Δ t=100 to cut off furnace power after time second; Cut off molecular pump and mechanical pump power supply when treating that base reservoir temperature freely is cooled near room temperature, treat the molecular pump stall after, in vacuum chamber, slowly charge into atmosphere, take out sample.
(f) the gold thin film sample of preparation gained is netted polycrystalline structure, and grain-size is 20～40nm.
Claims (8)
1, a kind of method of preparing functional film on fused substrate surface, it is characterized in that adopting at room temperature the low melting point low-steam pressure material for solid phase is substrate; Before the deposit film, the rising base reservoir temperature becomes the liquid phase substrate with its fusion, and its saturated vapor pressure should be less than the vacuum chamber baric minimum; Adopt the method for thermal evaporation or magnetron sputtering then, at liquid phase substrate surface growth function film; Deposition keeps the Δ t time again with base reservoir temperature after finishing, and is cooled to room temperature then, and substrate is solidified, and the microtexture of film obtains stable maintenance, and processing step is as follows:
A, will be at room temperature place on the sanding slide glass of cleaning for the base material of the low melting point low melt vapour pressure of solid phase, then slide glass is put on the substrate holder of vacuum chamber, substrate holder is below evaporation source or sputtering source, the film substrate surface should be towards evaporation source or sputtering source, distance between substrate holder and evaporation source or the sputtering source is 8～15cm, and with baffle plate they is isolated;
B, usefulness mechanical pump and molecular pump evacuated chamber to 1 * 10
-4Pa～6 * 10
-4The vacuum tightness of Pa;
C, heat substrate with electric furnace, make the melting temperature of its temperature a little more than base material, substrate is melt into liquid phase, and its vapour pressure is lower than the air pressure in the vacuum chamber, keeps substrate constant temperature then;
D, different evaporation source or the sputtering source thin-film materials of little heating, made it degasification 3 minutes, increase tungsten filament electric current or sputtering power then to the thin-film material start vaporizer, open baffle plate after the rate stabilization to be evaporated and begin growing film, adopt the speed and the film thickness of crystal oscillator thickness tester and baffle controls film growth;
E, when film growth when certain nominal thickness, cut off the power supply of evaporation source or sputtering source, close baffle plate, finish growth, then base reservoir temperature is kept again Δ t to cut off furnace power after 0～2 hour, allow substrate freely cool off;
F, cut off molecular pump and mechanical pump power supply when treating that base reservoir temperature drops near room temperature, in vacuum chamber, slowly charge into atmosphere then, promptly obtain the polycrystalline function film that the present invention has the nanofeature structure.
2, the method for preparing functional film on fused substrate surface according to claim 1 is characterized in that the evaporation source of described vacuum-evaporator unit or the distance between sputtering source and the substrate holder are 8～15cm, and the degasification time of thin film evaporation material is 3 minutes.
3, the preparation method of molten substrate function of surface film according to claim 1, it is characterized in that described different evaporation source thin-film material is a kind of in nonmagnetic substance (Au, Ag, Al, Cu), magneticsubstance (Fe, Co, Ni) or other the polynary complex function thin film material, its purity is 99.9%～99.99%.
4, the method for preparing functional film on fused substrate surface according to claim 1 is characterized in that described base material is a kind of in the materials such as low temperature glass, low melting point macromolecular material, gallium.
5, the method for preparing functional film on fused substrate surface according to claim 1 is characterized in that the cleaning step of described slide glass is as follows:
The slide glass of sanding is put into acetone to be soaked 24 hours;
Slide glass is put into ultrasonic cleaner, scrubbing one hour;
Wash repeatedly with deionized water;
In the vertical laminar flow clean bench, slide glass is carried out drying treatment at last.
6, the method for preparing functional film on fused substrate surface according to claim 1, the vacuum chamber residual gas air pressure when it is characterized in that growing film is 1 * 10
-4～6 * 10
-4Pa.
7, the method for preparing functional film on fused substrate surface according to claim 1, the scope that it is characterized in that the sedimentation rate f of described function film are 2.0nm/s＞f＞0.001nm/s.
8, the method for preparing functional film on fused substrate surface according to claim 1 is characterized in that described function film has quasi-circular nanocluster or branch-like amorphous structure; Along with the film nominal thickness increases, can form have netted, vesicular, the continuous polycrystal film structure of nano-sized particles, nano-sized grains, its upper and lower surface is coarse and be Fractal dimension structure, grain-size is from 10
0～10
2Nm is adjustable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610049552 CN1807676A (en) | 2006-02-21 | 2006-02-21 | Process for preparing functional film on fused substrate surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610049552 CN1807676A (en) | 2006-02-21 | 2006-02-21 | Process for preparing functional film on fused substrate surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1807676A true CN1807676A (en) | 2006-07-26 |
Family
ID=36839768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610049552 Pending CN1807676A (en) | 2006-02-21 | 2006-02-21 | Process for preparing functional film on fused substrate surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1807676A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104073774A (en) * | 2014-03-28 | 2014-10-01 | 能源X控股有限公司 | Device for preparing nano thin film in porous structure and application of device |
-
2006
- 2006-02-21 CN CN 200610049552 patent/CN1807676A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104073774A (en) * | 2014-03-28 | 2014-10-01 | 能源X控股有限公司 | Device for preparing nano thin film in porous structure and application of device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101429644B (en) | Production method of metal or metal oxide nano particle | |
| CN112359421B (en) | Method for preparing layered bismuth-oxygen-selenium semiconductor film by reverse airflow method | |
| US7985713B2 (en) | Superconducting magnesium boride thin-film and process for producing the same | |
| CN100366786C (en) | Novel metallic film preparation technology on liquid phase substrate surface | |
| JP3531865B2 (en) | Ultra-flat transparent conductive film and manufacturing method thereof | |
| CN113073300A (en) | Method for plating high-purity zinc sulfide film on surface of non-metallic material in penetrating manner | |
| CN102330055B (en) | Method for preparing titanium nitride epitaxial film serving as electrode material | |
| CN101296880A (en) | Ceramic target, film constituting zinc, gallium and boron oxide and method of manufacturing of the said film | |
| CN102345096A (en) | Copper nanowire / copper film composite structure and preparation method thereof | |
| WO2014174133A1 (en) | Method for the controlled production of graphene under very low pressure and device for carrying out said method | |
| CN1807676A (en) | Process for preparing functional film on fused substrate surface | |
| WO2015050630A2 (en) | Methods of producing large grain or single crystal films | |
| CN101586227A (en) | Adopt ion plating on growth substrates, to prepare the method for aluminium nitride material | |
| CN1294633C (en) | Method for preparing high quality ZnO single crystal thin film on (La, Sr) (Al, Ta) O3 | |
| CN105441877A (en) | Resistance type thermal evaporation technology for preparing ferromagnetic material Fe3Si film | |
| Shin et al. | Structural and optical properties of hydrothermally grown zinc oxide nanorods on polyethersulfone substrates as a function of the growth temperature and duration | |
| CN1106455C (en) | Large area diamond film material growth technology of nanometer diamond powder pretreatment | |
| Cheng et al. | Effects of substrate temperature on the growth of C60 polycrystalline films by physical vapor deposition | |
| CN108754215A (en) | A kind of Cu-B alloy material and preparation method thereof having both high hard high-ductility high conductivity | |
| CN115261991A (en) | Method for reducing defect density of carbon inclusion in silicon carbide single crystal | |
| CN112038481A (en) | Heavy rare earth doped ZnO columnar crystal preferred orientation piezoelectric film material and preparation method thereof | |
| CN104651790A (en) | Metallic resistance Cu/Cu2O semiconductor dispersion composite membrane and preparation method thereof | |
| CN109943818B (en) | Method for preparing ultra-coarse film in situ | |
| CN116254509A (en) | Preparation of MgZnO film by electron beam evaporation method | |
| CN101063226A (en) | Electron tubes type equipment for preparing nano material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |