CN110016650A - A kind of method that original position regulates and controls film surface roughening rate on a large scale - Google Patents

A kind of method that original position regulates and controls film surface roughening rate on a large scale Download PDF

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CN110016650A
CN110016650A CN201910239032.XA CN201910239032A CN110016650A CN 110016650 A CN110016650 A CN 110016650A CN 201910239032 A CN201910239032 A CN 201910239032A CN 110016650 A CN110016650 A CN 110016650A
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rate
target
roughening rate
diffusion
original position
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CN110016650B (en
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胡超权
蔡继泽
张侃
郑伟涛
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Jilin University
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0664—Carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to film surfaces to be roughened rate field, regulate and control the method for film surface roughening rate on a large scale more particularly to a kind of original position, including specimen material, the specimen material selects hafnium nitride, during the preparation process, by using the method for magnetic control co-sputtering, amorphous layer is introduced, hinder uphill diffusion using amorphous package action and then obtains low roughening rate；Adatom diffusion theory Guiding Practice is simplified complicated diffusion by the present invention, only considers the ascents and descents diffusion for influencing roughing in surface rate, is proposed control table on atomic level and is looked unfamiliar long new method.By introducing amorphous layer, hinders uphill diffusion to substantially reduce climb and fall spreading probability ratio, and then obtain extremely low roughening rate, prepared the film of ultra-smooth；By introducing with the non-wetted element of fertile material, hinders descending diffusion to greatly improve climb and fall spreading probability ratio, and then obtain high roughening rate, prepared super coarse film.

Description

A kind of method that original position regulates and controls film surface roughening rate on a large scale
Technical field
The present invention relates to film surfaces to be roughened rate field, and in particular to a kind of original position regulates and controls film surface roughening on a large scale The method of rate.
Background technique
With the fast development of modern life science, physics and chemistry, more and more films with special surface Material is used in the emerging technology areas such as energy storage, superconduction, super surface, catalysis and biomedicine.In such applications, film The control of surface topography and roughness is most important.Such as in order to improve the durable of the middle-size and small-size mechanically moving component of MEMS The roughness of property and reliability, the durable protective film being coated on sliding pin at least needs to reach 1nm ultra-smooth state below；For Frictional resistance can be reduced can adhere to lubricating oil again, and the roughness of gear surface needs the intermediate shape between 5-25nm State；In order to postpone the formation of undesirable threadiness capsule around implantation material, the surface roughness of implant at least needs to reach The super roughened state of 30nm or more.People often observe roughing in surface phenomenon in traditional in-situ preparation method, i.e., slightly The phenomenon that rugosity increases with film thickness and is increased, wherein as the speed that the increase surface roughness of film thickness increases is to be roughened speed Rate.However, conventional method is by regulation experiment parameter, such as substrate bias, depositing temperature and gas flow etc. prepare most of materials Roughening rate when material all in intermediate region, when film thickness within the specified scope when, the surface roughness of film can neither reach Super roughened state is also not achieved in ultra-smooth state, for example film thickness, at 1 μm, range of surface roughness is 2-7nm.So in order to reach To ultra-smooth and super rough surface, complicated and expensive post-processing, such as electron beam lithography, chemistry corruption are relied only at this stage Erosion etc..Therefore, it is most important to invent a kind of method that original position regulates and controls film surface roughening rate on a large scale.
So far, the technological difficulties of regulation film surface roughening rate in situ mainly concentrate two aspects: (1) having and grind Study carefully still indefinite to the microcosmic influence factors and its action rule of film surface roughening rate.Although researcher pays much attention to film surface Be roughened microcosmic mechanism research and be associated with adatom spread, but due to adatom spread be it is random, complicated and It being difficult to directly to observe, microcosmic adatom diffusion never has with the dependence that macro surface is roughened to be explored well, from The method that surface roughness is accurately controlled on atomic level is never suggested；(2) lack the correlation technique that provides a reference and Technology.Prior art discloses the sedimentary conditions such as depositing temperature and substrate bias to the influence rule of film surface roughening rate variation Rule, but these conventional methods have different materials different function and effect, it is sometimes even opposite, do not have good Universality, and this conventional method can not will roughening rate regulation to the shape that can prepare ultra-smooth or super coarse film State.How by other methods, further enlarged surface in situ is roughened rate modification scope one on the basis of these conventional methods Directly have not been reported.Therefore, present invention obviates complexity diffusion problems caused by adatom random walk, only consider to roughing in surface Maximum ascents and descents diffusion is influenced, hinders uphill diffusion to obtain ultralow roughening rate by introducing amorphous package, passes through Regulate and control experiment parameter and obtain general roughening rate, and introduces the roughening that non-wetted element hinders descending diffusion to obtain superelevation Rate, and then obtain big roughening rate modification scope.
Summary of the invention
For disadvantages mentioned above present in the prior art, the present invention provides a kind of original position, to regulate and control film surface on a large scale thick The method for changing rate, simplifies complicated diffusion, and only considering, which influences maximum ascents and descents to roughing in surface, spreads, by drawing Entering amorphous package hinders uphill diffusion to obtain ultralow roughening rate, controls substrate bias and depositing temperature obtains general roughening Rate, and introduce non-wetted element and descending diffusion is hindered to obtain the roughening rate of superelevation, and then obtain big roughening rate Modification scope.
In order to achieve the above object, the present invention is achieved by the following technical programs:
A kind of method that original position regulates and controls film surface roughening rate on a large scale, including fertile material are led to during the preparation process The method using magnetic control co-sputtering is crossed, amorphous layer is introduced, hinder uphill diffusion using amorphous package action and then is obtained ultralow It is roughened rate；Intermediate roughening rate is obtained by controlling substrate bias and depositing temperature during the preparation process；By doping with The non-wetted element of fertile material hinders descending to spread and then obtains the roughening rate of superelevation using nonwetting property.
Preferably, using hafnium nitride as fertile material, comprising the following steps:
A, silicon wafer substrate is chosen as substrate, successively uses acetone, dehydrated alcohol, distilled water ultrasound clear the silicon wafer substrate It washes, is dried up after cleaning, it is spare to obtain target；
B, discharge gas is used during the deposition process, is adjusted operating pressure, is controlled the sputtering power of pure hafnium target and required target, It is sputtered according to required condition, the film deposited in substrate after sputtering.
Preferably, the discharge gas selects the mixed gas or oxygen of nitrogen and argon gas and the mixed gas of argon gas, N in the mixed gas of the nitrogen and argon gas2/(Ar+N2) flow-rate ratio 3.8%, in the mixed gas of the oxygen and argon gas O2/(O2+ Ar) flow-rate ratio be 20%.
Preferably, required target selects carbon target, silver-colored target, tungsten target and gold target.
Preferably, operating pressure is maintained at 0.8Pa in the step b, and the RF power for being applied to hafnium target is 130~170W.
Preferably, underlayer temperature selection does not heat in required condition in the step b, and the speed of rotation of sample is 5r/ Min, substrate bias range is in -10v~-240v, and sedimentation time is in 5min~80min.
The method that a kind of original position that the present invention provides for the first time regulates and controls film surface roughening rate on a large scale, creativeness are By adatom diffusion theory Guiding Practice, the ascents and descents diffusion for influencing roughing in surface rate is only considered.Inventor's discovery table Face roughening is mainly the proportionate relationship competed between adatom diffusion up and down: νR=k δ, wherein νRIt is roughening rate, δ is that have Imitate dispersal direction.We hinder uphill diffusion and substantially reduce δ by introducing amorphous layer, so that δ < < it 1 and then obtains extremely low νR, the film of ultra-smooth can be prepared.We hinder descending diffusion will by introducing and the non-wetted element of fertile material δ is greatly improved, so that δ > > 1 and then obtain high νR, the coarse film of excess of export can be prepared.
Compared with prior art, the beneficial effects of the present invention are: original position proposed by the present invention regulates and controls roughening rate on a large scale Method, simple process, high-efficient, the film for preparing various surface roughnesses that can not only be in situ, and film thickness monitoring At 1-4 μm, it is widely suitable for the various coating applications for having demand to rough surface.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below There is attached drawing needed in technical description to be briefly described.It should be evident that the accompanying drawings in the following description is only this Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with It obtains other drawings based on these drawings.
Fig. 1 is the acquisition of embodiment 1 using hafnium nitride as the roughening rate diagram of parent；
Fig. 2 is the acquisition of embodiment 1 using hafnium nitride as the surface topography map of parent；
Fig. 3 is the acquisition of embodiment 1 using hafnium nitride as the roughening rate and coarseness data of parent.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described.Obviously, described embodiment is A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
Embodiment 1:
A kind of method that original position regulates and controls film surface roughening rate on a large scale, including fertile material, fertile material select nitrogen Change hafnium, during the preparation process, by using the method for magnetic control co-sputtering, introduces carboritride amorphous layer, wrapped up using amorphous Effect hinders uphill diffusion and then obtains low roughening rate；By doping and the non-wetted silver element of fertile material, using not Wetability hinders descending to spread and then obtains high roughening rate.
Specifically, the following steps are included:
A, silicon wafer substrate is chosen as substrate, successively uses acetone, dehydrated alcohol, distilled water to be cleaned by ultrasonic silicon wafer substrate, It is dried up after cleaning, it is spare to obtain target；
B, discharge gas is used during the deposition process, is adjusted operating pressure, is controlled the sputtering power of pure hafnium target and required target, It is sputtered according to required condition, the film deposited in substrate after sputtering.
N in the mixed gas of the mixed gas of discharge gas selection nitrogen and argon gas, nitrogen and argon gas2/(Ar+N2) stream Measure ratio 3.8%.
Required target selects silver-colored target and carbon target.
Operating pressure is maintained at 0.8Pa in step b, and the RF power for being applied to hafnium target is 150W.Underlayer temperature: it does not heat； Sample rotates rate: 5r/min, sedimentation time select 10min, 40min and 80min respectively, and substrate is inclined when preparing pure HfN sample Press successively selection -10v, -40v, -160v and -240v.In addition being prepared for underlayer temperature again is 400 DEG C, and substrate bias is -40v Pure HfN sample, other conditions are constant.Use the ultralow CN/ HfN multilayer film of pure hafnium target and pure carbon target preparation roughening rate. In magnetron sputtering deposition process, the dc power for being applied to carbon target is 200W, and substrate pressure is -40v, and other conditions are constant. In addition, preparing the HfN film of the Ag doping of roughening rate superelevation by cosputtering hafnium and silver-colored target.During deposition, it is applied to silver The RF power of target is 30W, and substrate pressure is maintained at -40v, and other conditions are constant.It is characterized respectively by AFM and contourgraph each thin The surface roughness and film thickness of film, the slope for then calculating RMS-d straight line obtain roughening rate (Fig. 3).
Embodiment 2:
A kind of method that original position regulates and controls film surface roughening rate on a large scale, including fertile material, fertile material select nitrogen Change hafnium, during the preparation process, by using the method for magnetic control co-sputtering, introduces carboritride amorphous layer, wrapped up using amorphous Effect hinders uphill diffusion and then obtains low roughening rate；By doping and the non-wetted gold element of fertile material, using not Wetability hinders descending to spread and then obtains high roughening rate.
Specifically, the following steps are included:
A, silicon wafer substrate is chosen as substrate, successively uses acetone, dehydrated alcohol, distilled water to be cleaned by ultrasonic silicon wafer substrate, It is dried up after cleaning, it is spare to obtain target；
B, discharge gas is used during the deposition process, is adjusted operating pressure, is controlled the sputtering power of pure hafnium target and required target, It is sputtered according to required condition, the film deposited in substrate after sputtering.
N in the mixed gas of the mixed gas of discharge gas selection nitrogen and argon gas, nitrogen and argon gas2/(Ar+N2) stream Measure ratio 3.8%.Required target selects tungsten target and gold target.Operating pressure is maintained at 0.8Pa in step b, is applied to the RF power of hafnium target For 150W.Underlayer temperature: it does not heat；Sample rotates rate: 5r/min, sedimentation time select respectively 10min, 40min and 80min, substrate bias successively selection -10v, -40v, -160v and -240v when preparing pure HfN sample.By using pure hafnium target and Pure carbon target prepares CN/HfN multilayer film.In magnetron sputtering deposition process, the dc power for being applied to carbon target is 200W, substrate pressure It is by force -40v, other conditions are constant.In addition, preparing the HfN film of Au doping by cosputtering hafnium and gold target.During deposition, The RF power for being applied to gold target is 30W, and substrate pressure is maintained at -40v, and other conditions are constant.
Embodiment 3:
A kind of method that original position regulates and controls film surface roughening rate on a large scale, including fertile material, specimen material select oxygen Change hafnium, during the preparation process, by using the method for magnetic control co-sputtering, introduces tungsten oxide amorphous layer, utilize amorphous package action It hinders uphill diffusion and then obtains low roughening rate；By doping and the non-wetted gold element of fertile material, utilization is nonwetting Property hinder descending to spread and then obtain high roughening rate.
Specifically, the following steps are included:
A, silicon wafer substrate is chosen as substrate, successively uses acetone, dehydrated alcohol, distilled water to be cleaned by ultrasonic silicon wafer substrate, It is dried up after cleaning, it is spare to obtain target；
B, discharge gas is used during the deposition process, is adjusted operating pressure, is controlled the sputtering power of pure hafnium target and required target, It is sputtered according to required condition, the film deposited in substrate after sputtering.
During the deposition process, in the mixed gas of the mixed gas of discharge gas selection oxygen and argon gas, oxygen and argon gas O2/(O2+ Ar) flow-rate ratio be 20%.Operating pressure is maintained at 1.0Pa, is applied to the RF power of Hf target: 150W；Underlayer temperature: no Heating；Sample rotates rate: 5r/min.Prepare pure HfO2When sample substrate bias successively selection -10v, -40v, -80v and - 160v.Sedimentation time is respectively 5min, 10min, 20min and 40min.WO is prepared by using pure hafnium target and pure tungsten target3/HfO2 Multilayer film.In magnetron sputtering deposition process, the RF power for being applied to tungsten target is 120W, and substrate pressure is -40v, other conditions It is constant.The HfO of Au doping is prepared by cosputtering hafnium and gold target2Film.During deposition, the RF power for being applied to gold target is 30W, substrate pressure are maintained at -40v, and other conditions are constant.
The method that a kind of original position provided by the present invention regulates and controls film surface roughening rate on a large scale, which passes through, introduces amorphous layer, Uphill diffusion is hindered using amorphous package action and then obtains low roughening rate；Pass through doping and the non-wetted member of fertile material Element hinders descending to spread and then obtains high roughening rate using nonwetting property.
In the above-mentioned methods, select hafnium nitride as a wide range of regulation of exemplifications set roughening rate.It is hindered by introducing The carbon nitrogen amorphous layer of uphill diffusion obtains ultralow roughening rate；It is hindered by introducing with the non-wetted silver particles of fertile material Descending spreads the roughening rate for obtaining superelevation.
The present invention is by simulation softward, the changing rule between simulation thin film surface bulge size and roughness, and combines Existing knowledge, by ascents and descents spreading probability quantification.Relationship between re-using experiment and simulation compares one by one, from roughening The microcosmic mechanism of rate is started with, it is found that the main factor for influencing film surface roughening rate is the ascents and descents diffusion of adatom Likelihood ratio.By hindering uphill diffusion, amorphous layer is such as introduced, minimum roughening rate can be obtained；By hindering descending diffusion, Such as introducing and the non-wetted element of parent, several big roughening rates can be obtained.
In addition, adatom diffusion theory Guiding Practice is simplified complicated diffusion, only consider to influence roughing in surface rate Ascents and descents diffusion, propose control table on atomic level and look unfamiliar long new method.By introducing amorphous layer, hinder to go up a slope Diffusion substantially reduces climb and fall spreading probability ratio, and then obtains extremely low roughening rate, has prepared the film of ultra-smooth.It is logical Introducing and the non-wetted element of fertile material are crossed, hinders descending diffusion to greatly improve climb and fall spreading probability ratio, and then obtain High roughening rate was obtained, super coarse film has been prepared.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to the foregoing embodiments Invention is explained in detail, those skilled in the art should understand that: it still can be to aforementioned each implementation Technical solution documented by example is modified or equivalent replacement of some of the technical features；And these modification or Replacement, can't be such that the essence of corresponding technical solution departs from the spirit and scope of the technical scheme of various embodiments of the present invention.

Claims (6)

1. a kind of method that original position regulates and controls film surface roughening rate on a large scale, it is characterised in that: including fertile material, preparing In the process, by using the method for magnetic control co-sputtering, amorphous layer is introduced, hinder uphill diffusion using amorphous package action and then is obtained Obtain ultralow roughening rate；Intermediate roughening rate is obtained by controlling substrate bias and depositing temperature during the preparation process；It is logical Overdoping and the non-wetted element of fertile material hinder descending to spread and then obtain the roughening rate of superelevation using nonwetting property.
2. the method that a kind of original position according to claim 1 regulates and controls film surface roughening rate on a large scale, it is characterised in that: Using hafnium nitride as fertile material, comprising the following steps:
A, silicon wafer substrate is chosen as substrate, successively uses acetone, dehydrated alcohol, distilled water to be cleaned by ultrasonic the silicon wafer substrate, It is dried up after cleaning, it is spare to obtain target；
B, discharge gas is used during the deposition process, is adjusted operating pressure, is controlled the sputtering power of pure hafnium target and required target, according to Required condition is sputtered, the film deposited in substrate after sputtering.
3. the method that a kind of original position according to claim 2 regulates and controls film surface roughening rate on a large scale, it is characterised in that: The mixed gas of the mixed gas or oxygen and argon gas of the discharge gas selection nitrogen and argon gas, the nitrogen and argon gas N in mixed gas2/(Ar+N2) flow-rate ratio 3.8%, O in the mixed gas of the oxygen and argon gas2/(O2+ Ar) flow-rate ratio is 20%.
4. the method that a kind of original position according to claim 2 regulates and controls film surface roughening rate on a large scale, it is characterised in that: Required target selects carbon target, silver-colored target, tungsten target and gold target.
5. the method that a kind of original position according to claim 2 regulates and controls film surface roughening rate on a large scale, it is characterised in that: Operating pressure is maintained at 0.8Pa in the step b, and the RF power for being applied to hafnium target is 130~170W.
6. the method that a kind of original position according to claim 2 regulates and controls film surface roughening rate on a large scale, it is characterised in that: Underlayer temperature selection does not heat in required condition in the step b, and the speed of rotation of sample is 5r/min, substrate bias range In -10v~-240v, sedimentation time is in 5min~80min.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1255553A (en) * 1998-11-26 2000-06-07 武汉大学 Multi-layer compounded superhard C3N4/MN film and its synthesizing equipment and process
JP2000169960A (en) * 1998-12-04 2000-06-20 Japan Energy Corp Sputtering target for forming optical disk recording film
CN1730716A (en) * 2005-08-23 2006-02-08 浙江大学 Novel metallic film preparation technology on liquid phase substrate surface
EP2123789A1 (en) * 2008-05-15 2009-11-25 Eifeler Werkzeuge GmbH A method of producing hard coatings

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1255553A (en) * 1998-11-26 2000-06-07 武汉大学 Multi-layer compounded superhard C3N4/MN film and its synthesizing equipment and process
JP2000169960A (en) * 1998-12-04 2000-06-20 Japan Energy Corp Sputtering target for forming optical disk recording film
CN1730716A (en) * 2005-08-23 2006-02-08 浙江大学 Novel metallic film preparation technology on liquid phase substrate surface
EP2123789A1 (en) * 2008-05-15 2009-11-25 Eifeler Werkzeuge GmbH A method of producing hard coatings

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