CN1730700A - Novel silicon base alloy - Google Patents
Novel silicon base alloy Download PDFInfo
- Publication number
- CN1730700A CN1730700A CN 200510060331 CN200510060331A CN1730700A CN 1730700 A CN1730700 A CN 1730700A CN 200510060331 CN200510060331 CN 200510060331 CN 200510060331 A CN200510060331 A CN 200510060331A CN 1730700 A CN1730700 A CN 1730700A
- Authority
- CN
- China
- Prior art keywords
- base alloy
- silicon base
- silicon
- silver
- weight ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Conductive Materials (AREA)
Abstract
The invention relates to a novel silicon base alloy, which mainly comprises silicon element 60-95% and colored metallic elements 5-40% (by weight ratio), the colored metallic elements are one or the combination of Ag, Ni, Al, Sn, Cu, W, Pb and Sb.
Description
Technical field
The present invention relates to a kind of metallic substance, particularly a kind of novel silicon base alloy that is used for the power semiconductor device chip substrate.
Background technology
For a long time, domestic and international manufacturer production power semiconductor device, its chip substrate generally adopts thermal expansivity and the approaching molybdenum sheet of silicon chip.But because the continuous increase of Mo demand, the quick promotion of molybdenum sheet price now near precious metal materials such as silver, makes with the molybdenum sheet to be that the power semiconductor device cost of substrate increases substantially.And the performance of molybdenum sheet is also not satisfactory, is difficult to adapt to more large-sized silicon wafers substrate application.The sintering temperature of molybdenum sheet substrate and silicon chip is higher, generally more than 710 ℃; The machining property of molybdenum sheet and electrical and thermal conductivity performance are also undesirable, and also have the big and shortcoming such as remove difficulties of STRESS VARIATION,
Summary of the invention
The invention provides a kind of novel silicon base alloy that is used for the power semiconductor device chip substrate, make its price lower, and performance is more satisfactory.
Novel silicon base alloy of the present invention mainly is grouped into (weight ratio) by following one-tenth:
Element silicon 60--95%
Non-ferrous metal element 5-40%
Wherein the non-ferrous metal element is any one or the multiple combination in silver, nickel, aluminium, tin, copper, tungsten, lead, the antimony.
The present invention is owing to mainly adopted the element silicon material identical with silicon chip, and its thermal expansivity and silicon chip are more approaching; And allocate into the partially conductive heat conductivility preferably non-ferrous metal be combined into novel silicon base alloy, its sintering temperature is compared for 710 ℃ with the molybdenum sheet sintering temperature about 600 ℃, has reduced by 110 ℃; And price is lower, and STRESS VARIATION reduces, and machining property, electrical and thermal conductivity performance, chemical stability all significantly strengthen, and can adapt to more the large-sized silicon wafers substrate and use.Advantages such as therefore, it is low that the present invention has price, and performance is good.
Embodiment
Embodiment 1:
A kind of novel silicon base alloy is to be grouped into (weight ratio) by following one-tenth:
Silicon 70-85%
Silver 15-30%
The novel silicon base alloy that present embodiment is formed, its electrical and thermal conductivity performance is preferable.
Embodiment 2:
A kind of novel silicon base alloy is to be grouped into (weight ratio) by following one-tenth:
Silicon 75-85%
Silver 8-15%
Nickel 7-10%
The novel silicon base alloy that present embodiment is formed, its machining property and chemical stability are better.
Embodiment 3:
A kind of novel silicon base alloy is to be grouped into (weight ratio) by following one-tenth:
Silicon 75-85%
Silver 5-9%
Nickel 5-8%
Tin 5-8%
The novel silicon base alloy that present embodiment is formed, its STRESS VARIATION is less.
Embodiment 4:
A kind of novel silicon base alloy is to be grouped into (weight ratio) by following one-tenth:
Silicon 80-90%
Silver 3-5%
Nickel 3-5%
Tin 2-5%
Plumbous 2-5%
The novel silicon base alloy that present embodiment is formed, its thermal expansivity and silicon chip are very approaching.
Embodiment 5: a kind of novel silicon base alloy is to be grouped into (weight ratio) by following one-tenth:
Silicon 60-95%
Silver 1-8%
Nickel 1-8%
Tin 1-8%
Plumbous 0.5-6%
Antimony 0.5-6%
Aluminium 0.5-3%
Copper 0.5-1%
The novel silicon base alloy that present embodiment is formed, its sintering temperature is lower, generally below 600 ℃, compares for 710 ℃ with the sintering temperature of molybdenum sheet, has reduced by 110 ℃.
The present invention is combined into in element silicon and silver, nickel, aluminium, tin, copper, lead, the antimony element any one or more.Also can add other non-ferrous metal elements such as gold, chromium, molybdenum, titanium in addition.
Claims (6)
1. novel silicon base alloy that is used for the power semiconductor device chip substrate, it is characterized in that: it mainly is grouped into (weight ratio) by following one-tenth:
Element silicon 60--95%
Non-ferrous metal element 5-40%
Wherein the non-ferrous metal element is any one or the multiple combination in silver, nickel, aluminium, tin, copper, tungsten, lead, the antimony.
2, novel silicon base alloy according to claim 1 is characterized in that: it is grouped into (weight ratio) by following one-tenth:
Silicon 70-85%
Silver 15-30%
3. novel silicon base alloy according to claim 1 is characterized in that: it is grouped into (weight ratio) by following one-tenth:
Silicon 75-85%
Silver 8-15%
Nickel 7-10%
4. novel silicon base alloy according to claim 1 is characterized in that: be grouped into (weight ratio) by following one-tenth:
Silicon 75-85%
Silver 5-9%
Nickel 5-8%
Tin 5-8%
5. novel silicon base alloy according to claim 1 is characterized in that: be grouped into (weight ratio) by following one-tenth:
Silicon 80-90%
Silver 3-5%
Nickel 3-5%
Tin 2-5%
Plumbous 2-5%
6. novel silicon base alloy according to claim 1 is characterized in that: be grouped into (weight ratio) by following one-tenth:
Silicon 60-95%
Silver 1-8%
Nickel 1-8%
Tin 1-8%
Plumbous 0.5-6%
Antimony 0.5-6%
Aluminium 0.5-3%
Copper 0.5-1%
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510060331 CN1730700A (en) | 2005-08-04 | 2005-08-04 | Novel silicon base alloy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510060331 CN1730700A (en) | 2005-08-04 | 2005-08-04 | Novel silicon base alloy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1730700A true CN1730700A (en) | 2006-02-08 |
Family
ID=35963121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510060331 Pending CN1730700A (en) | 2005-08-04 | 2005-08-04 | Novel silicon base alloy |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1730700A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113106274A (en) * | 2021-03-25 | 2021-07-13 | 北京诺飞新能源科技有限责任公司 | Preparation method of wear-resistant and corrosion-resistant high-silicon aluminum alloy |
-
2005
- 2005-08-04 CN CN 200510060331 patent/CN1730700A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113106274A (en) * | 2021-03-25 | 2021-07-13 | 北京诺飞新能源科技有限责任公司 | Preparation method of wear-resistant and corrosion-resistant high-silicon aluminum alloy |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI582247B (en) | Ag alloy sputtering target and method of producing ag alloy film | |
| JP4897981B2 (en) | Lead frame for optical semiconductor device, manufacturing method thereof, and optical semiconductor device | |
| CN1278399C (en) | Process for making multiplayer wire distributed board having film capacitor | |
| CN101314832B (en) | Iron alloy material, semiconductor lead frame made of iron alloy material and method of manufacturing the same | |
| CN1794476A (en) | Indium gallium aluminium nitrogen semi-conductor luminous element containing metallic chromium substrate and its manufacturing method | |
| CN1794477A (en) | Ohm electrode containing gold germanium nickel, indium gallium aluminum nitrogen semiconductor luminous element and its manufacturing method | |
| CN1291052C (en) | Cu-Ni-Si alloy and its mfg. method | |
| CN1528024A (en) | Luminescent display device and method of manufacturing same | |
| CN1455829A (en) | Metal-plated material and method for preparation, and electric and electronic parts using same | |
| CN1822263A (en) | Ceramic electronic component and multilayer capacitor | |
| EP2453491A1 (en) | Lead frame for optical semiconductor device, manufacturing method of lead frame for optical semiconductor device, and optical semiconductor device | |
| WO2008021268A1 (en) | Led device and back panel of liquid crystal display | |
| JP2012099577A (en) | Bonding wire | |
| CN101287334B (en) | Manufacturing method of highly heat conductive circuit base board | |
| CN1730700A (en) | Novel silicon base alloy | |
| CN1864909A (en) | Solder alloy and a semiconductor device using the solder alloy | |
| JPH0653901B2 (en) | Copper alloy for electronic and electrical equipment | |
| JP5767521B2 (en) | Lead frame for optical semiconductor device and manufacturing method thereof | |
| EP1309447A1 (en) | Lead-free alloys with improved wetting properties | |
| CN114420816B (en) | Light-emitting diode chip and preparation process thereof | |
| TWI778583B (en) | Silver alloy wire | |
| CN1276438C (en) | Tin-zinc-aluminium alloy wire | |
| CN1306623C (en) | Method for manufacturing nitride luminous apparatus | |
| CN100464002C (en) | No-lead metal spraying material | |
| US9577154B2 (en) | Light emitting chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |