CN1728479A - Surface-emitting type device and method for manufacturing the same - Google Patents
Surface-emitting type device and method for manufacturing the same Download PDFInfo
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- CN1728479A CN1728479A CN 200510088879 CN200510088879A CN1728479A CN 1728479 A CN1728479 A CN 1728479A CN 200510088879 CN200510088879 CN 200510088879 CN 200510088879 A CN200510088879 A CN 200510088879A CN 1728479 A CN1728479 A CN 1728479A
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Abstract
The invention prevents electrostatic breakdown and improve reliability concerning surface-emitting type devices and methods for manufacturing the same. A surface-emitting type device includes a substrate (10), a light emitting element section (20) above the substrate (10), including a first semiconductor section (22) of a first conductivity type, a second semiconductor section (24) that functions as an active layer, and a third semiconductor section (26), (28) of a second conductivity type which are disposed from the side of the substrate (10), a rectification element section (40) above the substrate (10), including a first supporting section (42) composed of an identical composition of the first semiconductor section (22), a second supporting section (44) composed of an identical composition of the second semiconductor section (24), a fourth semiconductor section (46, 48), and a fifth semiconductor section (50), which are disposed from the side of the substrate (10), and first and second electrodes (30), (32) for driving the light emitting element section (20). The fourth and fifth semiconductor sections (46, 48, 50) are connected in parallel between the first and second electrodes (30, 32), and have a rectification action in a reverse direction with respect to the light emitting element section (20).
Description
Technical field
The present invention relates to surface-emitting type device and manufacture method thereof
Background technology
Because it is less that surface-emitting type semiconductor laser and end face launching semiconductor laser of the prior art are compared device volume, so it is also lower that the electrostatic breakdown of device self is withstand voltage.Therefore, in installation steps, the situation that device is sustained damage owing to the static that comes from machinery or operator can appear.Surface-emitting type device such as surface-emitting type semiconductor laser particularly has to a certain degree withstand voltage with respect to forward bias, still, withstand voltage lower with respect to reverse biased, thus the situation that device sustained damage owing to applied reverse bias voltage can appear.Usually, in installation steps, adopted various measures for removing static, still, these measures all have certain limitation.
Patent documentation 1: the spy opens the 2004-6548 communique
Summary of the invention
The object of the present invention is to provide a kind of surface-emitting type device and manufacture method thereof, it can prevent electrostatic breakdown, improves reliability.
(1) surface-emitting type device that the present invention relates to comprises: substrate; Light-emitting device portion is included in described substrate top from following each one that described substrate one side begins to dispose: first semiconductor portion of first conductivity type, have second semiconductor portion of active layer function, the 3rd semiconductor portion of second conductivity type; Rectifying device portion is included in described substrate top from following each one that described substrate one side is configured: first support portion that is made of the composition identical with described first semiconductor portion, second support portion, the 4th semiconductor portion and the 5th semiconductor portion that are made of the composition identical with described second semiconductor portion; And first electrode and second electrode that drive described light-emitting device portion, wherein, described the 4th semiconductor portion and the 5th semiconductor portion are connected in parallel between described first electrode and described second electrode, have and the rightabout rectified action of described light-emitting device portion.
According to the present invention,, in the rectifying device portion that is connected in parallel with light-emitting device portion, also have electric current even to the light-emitting device portion applied reverse bias voltage.Like this, can significantly improve withstand voltage with respect to the electrostatic breakdown of reverse biased.Therefore, can prevent the electrostatic breakdown in the installation process, improve reliability.
In addition, in the present invention, what is called is provided with the B layer above specific A layer, be included in situation that the B layer directly is set on the A layer and the situation that the B layer is set across other layers on the A layer.This situation also is the same in following invention form.
(2) in above-mentioned surface-emitting type device, described the 4th semiconductor portion is second conductivity type, and described the 5th semiconductor portion is first conductivity type.
Like this, can constitute junction diode by the 4th and the 5th semiconductor portion.
(3) in above-mentioned surface-emitting type device, described the 4th semiconductor portion can be by forming with the identical composition of described the 3rd semiconductor portion.
(4) in above-mentioned surface-emitting type device, between the described the 4th and the 5th semiconductor portion, capacity reduction portion can be set.
Like this, the capacity of junction diode can be reduced, therefore, the high-speed driving of surface-emitting type device can be realized.
(5) in this surface-emitting type device, described capacity reduction portion can be formed by intrinsic semiconductor.
Like this, can form the pin diode by the 4th semiconductor portion, capacity reduction portion and the 5th semiconductor portion.
(6) in this surface-emitting type device, described capacity reduction portion forms by comparing the low semiconductor of impurity concentration with described the 4th semiconductor portion or described the 5th semiconductor portion.
(7) in this surface-emitting type device, described the 4th semiconductor portion can comprise and be positioned at uppermost GaAs layer, and described capacity reduction portion can comprise the AlGaAs layer.
(8) in this surface-emitting type device, can form schottky junction on any in the described the 4th and the 5th semiconductor portion.
Like this, can form Schottky diode by the 4th and the 5th semiconductor portion.
(9) in this surface-emitting type device, described the 3rd semiconductor portion can comprise different two-layer at least of composition, described the 4th semiconductor portion can comprise different with the described composition identical composition of arbitrary layer in two-layer at least, and described the 5th semiconductor portion can comprise different with the described composition identical composition of another layer in two-layer at least.
(10) in this surface-emitting type device, described light-emitting device portion has the function of surface-emitting type semiconductor laser, and described first semiconductor portion has the function of first reflector, the function of described the 3rd semiconductor portion tool second reflector.
(11) in this surface-emitting type device, described the 3rd semiconductor portion can comprise the two-layer at least AlGaAs layer that the Al composition is different, described the 5th semiconductor portion can comprise with described the 4th semiconductor portion compares the high AlGaAs layer of Al composition, can form schottky junction on described the 5th semiconductor portion.
The manufacture method of the surface-emitting type device that (12) the present invention relates to may further comprise the steps (processing step): (a) above substrate, form first conductivity type first semiconductor layer, have second semiconductor layer as the active layer function, the 3rd semiconductor layer of second conductivity type and the 4th semiconductor layer of first conductivity type; (b) pass through at least to the 3rd and the 4th semiconductor layer pattern-making, form light-emitting device portion and rectifying device portion, this light-emitting device portion is included in described substrate top from following each one that described substrate one side begins to dispose: first semiconductor portion of first conductivity type, have second semiconductor portion of active layer function and the 3rd semiconductor portion of second conductivity type; This rectifying device portion is included in described substrate top from following each one that described substrate one side begins to dispose: first support portion that is made of the composition identical with described first semiconductor portion, second support portion, the 4th semiconductor portion of second conductivity type and the 5th semiconductor portion of first conductivity type that are made of the composition identical with described second semiconductor portion; (c) form first electrode and second electrode that drives described light-emitting device portion; And (d) on the direction that has with the rightabout rectified action of described light-emitting device portion, described the 4th semiconductor portion and described the 5th semiconductor portion are connected in parallel between described first electrode and described second electrode.
According to the present invention, form junction diode by the 4th semiconductor portion and the 5th semiconductor portion, this junction diode is connected in parallel on the direction that has with the reverse rectified action of light-emitting device portion.Like this, even to the light-emitting device portion applied reverse bias voltage, therefore the electric current junction diode of also can flowing through, can significantly improve for the electrostatic breakdown of reverse biased withstand voltage.Like this, can prevent the electrostatic breakdown in the installation steps, improve reliability.
(13) in the manufacture method of this surface-emitting type device, in described step (a), can also be included in formation capacity reduction layer between described the 3rd semiconductor layer and described the 4th semiconductor layer; In described step (b), can also comprise by described capacity being reduced layer pattern-making, formation capacity reduction portion between described the 4th semiconductor layer and described the 5th semiconductor portion.
Like this, the capacity of junction diode can be reduced, therefore, the high-speed driving of surface-emitting type device can be realized.
(14) in the manufacture method of this surface-emitting type device, described the 3rd semiconductor layer comprises uppermost GaAs layer, and capacity reduces layer and comprises the AlGaAs layer, in described step (b), by Wet-type etching described capacity is reduced layer pattern-making.
Like this, can the acquisition capacity reduce the etched selection ratio of layer and the 3rd semiconductor layer, therefore, can be easy to capacity reduced and layer carry out optionally etching.
The manufacture method of the surface-emitting type device that (15) the present invention relates to may further comprise the steps: (a) above substrate, form first conductivity type first semiconductor layer, have as second semiconductor layer of active layer function and the 3rd semiconductor layer of second conductivity type; (b) pass through at least to described the 3rd semiconductor layer pattern-making, form light-emitting device portion and rectifying device portion, this light-emitting device portion is included in described substrate top from following each one that described substrate one side begins to dispose: first semiconductor portion of first conductivity type, have second semiconductor portion of active layer function, the 3rd semiconductor portion of second conductivity type; This rectifying device portion is included in described substrate top from following each one that described substrate one side begins to dispose: first support portion that is made of the composition identical with described first semiconductor portion, second support portion, the 4th semiconductor portion of second conductivity type and the 5th semiconductor portion of second conductivity type that are made of the composition identical with described second semiconductor portion; (c) form first and second electrode that drives described light-emitting device portion; (d) on any one of the described the 4th and the 5th semiconductor portion, form schottky junction; And (e) on the direction that has with the rightabout rectified action of described light-emitting device portion, the described the 4th and the 5th semiconductor portion is connected in parallel between described first and second electrode.
According to the present invention, form Schottky diode by the 4th and the 5th semiconductor portion, this Schottky diode is connected in parallel on the direction that has with the reverse rectified action of light-emitting device portion.Like this, even to the light-emitting device portion applied reverse bias voltage, therefore the electric current Schottky diode of also can flowing through, can significantly improve for the electrostatic breakdown of reverse biased withstand voltage.Like this, can prevent the electrostatic breakdown in the installation steps, improve reliability.
Description of drawings
Fig. 1 is the plane graph of the related surface-emitting type device of first embodiment of the invention.
Fig. 2 is the sectional view of the II-II line among Fig. 1.
Fig. 3 is the circuit diagram of the related surface-emitting type device of first embodiment of the invention.
Fig. 4 is the schematic diagram of the surface-emitting type device manufacture method that relates to of first embodiment of the invention.
Fig. 5 is the schematic diagram of the surface-emitting type device manufacture method that relates to of first embodiment of the invention.
Fig. 6 is the schematic diagram of the surface-emitting type device manufacture method that relates to of first embodiment of the invention.
Fig. 7 is the schematic diagram of the surface-emitting type device manufacture method that relates to of first embodiment of the invention.
Fig. 8 is the schematic diagram of the surface-emitting type device manufacture method that relates to of first embodiment of the invention.
Fig. 9 is the sectional view of the surface-emitting type device that relates to of second embodiment of the invention.
Figure 10 is the schematic diagram of the surface-emitting type device manufacture method that relates to of second embodiment of the invention.
Figure 11 is the schematic diagram of the surface-emitting type device manufacture method that relates to of second embodiment of the invention.
Figure 12 is the schematic diagram of the surface-emitting type device manufacture method that relates to of second embodiment of the invention.
Figure 13 is the schematic diagram of the surface-emitting type device manufacture method that relates to of second embodiment of the invention.
Figure 14 is the schematic diagram of the surface-emitting type device manufacture method that relates to of second embodiment of the invention.
Figure 15 is the schematic diagram of the light transmitting device of third embodiment of the invention.
Figure 16 is the schematic diagram that the light transmitting device of fourth embodiment of the invention uses form.
Figure 17 is the plane graph of the surface-emitting type device that relates to of fifth embodiment of the invention.
Figure 18 is the sectional view of the XVII-XVII line of Figure 17.
Figure 19 is the schematic diagram of the surface-emitting type device manufacture method that relates to of fifth embodiment of the invention.
Figure 20 is the schematic diagram of the surface-emitting type device manufacture method that relates to of fifth embodiment of the invention.
Figure 21 is the schematic diagram of the surface-emitting type device manufacture method that relates to of fifth embodiment of the invention.
Figure 22 is the schematic diagram of the surface-emitting type device manufacture method that relates to of fifth embodiment of the invention.
Embodiment
(first embodiment)
1-1. surface-emitting type device
Fig. 1 is the plane graph according to the surface-emitting type device of the first embodiment of the present invention.Fig. 2 is the sectional view of the II-II line among Fig. 1.Fig. 3 is the circuit diagram of the related surface-emitting type device of present embodiment.
Surface-emitting type device 1 comprises: substrate 10, light-emitting device portion 20 and rectifying device portion 40.In the present embodiment, be that surface-emitting type semiconductor laser is that example describes with surface-emitting type device.
Light-emitting device portion 20 is formed on the substrate 10.Can form a light-emitting device portion 20 on the substrate 10, also can form a plurality of light-emitting device portion 20.The upper surface of light-emitting device portion 20 (end face) becomes the surface of emission 29 of light.The flat shape of light-emitting device portion 20 can be circular, but is not limited thereto.Light-emitting device portion 20 is called vertical resonator in surface-emitting type semiconductor laser.
Light-emitting device portion 20 comprises following each one that begins to dispose from substrate 10 1 sides: first semiconductor portion 22 of first conductivity type (for example n type), second semiconductor portion 24 with active layer function, and the 3rd semiconductor portion 26,28 of second conductivity type (for example p type).
The 3rd semiconductor portion 26,28 forms the p type by doping C, Zn, Mg etc., and first semiconductor portion 22 forms the n type by doping Si, Se etc.Therefore, by the 3rd semiconductor portion 26,28, second semiconductor portion 24 and first semiconductor portion 22 of impurity form the Pin diodes.
Form insulating barrier 25 in constituting the layer of the 3rd semiconductor portion 26, near the zone of second semiconductor portion 24 with active layer function.Insulating barrier 25 has the function of current blocking layer.Insulating barrier 25 for example forms ring-type along the flat shape periphery of light-emitting device portion 20.Insulating barrier 25 can be main component with the aluminium oxide.
First and second electrode 30,32 that on light-emitting device portion 20, is formed for driving.
On the other hand, second electrode 32 is electrically connected with the 3rd semiconductor portion 26,28, for example can be formed on the 3rd semiconductor portion 28 as contact site.As shown in Figure 1, second electrode 32 can form ring-type along the edge part of the 3rd semiconductor portion 28 upper surfaces.In this case, the central portion of the upper surface of the 3rd semiconductor portion 28 becomes the surface of emission 29.Second electrode 32 for example can be formed by the alloy of Au and Zn and the laminated film of Au.
By first and second electrode 30,32, electric current is flowed through and is had second semiconductor portion 24 of active layer function.In addition, the material of first and second electrode 30,32 has more than and is limited to above-mentioned material, for example also can utilize alloy of metals such as Ti, Ni, Au or Pt or these metals etc.
Rectifying device portion 40 is formed on the zone different with light-emitting device portion 20 on the substrate 10.Rectifying device portion 40 has rectified action.The related rectifying device portion 40 of present embodiment comprises junction diode 52 (comprising Zener diode).
Rectifying device portion 40 comprises following each one that begins to dispose from substrate 10 1 sides: first support portion 42 that is made of the composition identical with first semiconductor portion 22, second support portion 44 that constitutes by the composition identical with second semiconductor portion 24, the 4th semiconductor portion 46,48, and the 5th semiconductor portion 50.
The formation that can link to each other with first semiconductor portion 22 of first support portion 42.In other words, can be on substrate 10, to form first semiconductor layer 80, the part of this first semiconductor layer 80 is first semiconductor portion 22, another part is first support portion 42.In addition, second support portion 44 formation that also can link to each other with second semiconductor portion 24.In other words, can be on first semiconductor layer 80, to form second semiconductor layer 82, the part of this second semiconductor layer 82 is second semiconductor portion 24, another part is second support portion 44.Perhaps, second support portion 44 also can with the setting that is separated from each other of second semiconductor portion 24.
The 4th semiconductor portion 46,48 is second conductivity type (for example p types), and the 5th semiconductor portion 50 is first conductivity type (for example n types).Like this, can form the pn junction diode at the interface of the 4th and the 5th semiconductor portion 48,50.In addition, be not only the action that the 4th semiconductor portion 48, the four semiconductor portion 46 also can help the pn junction diode.
The 4th semiconductor portion 46,48 can be by forming with the 3rd semiconductor portion 26,28 identical compositions.In example shown in Figure 2, the 4th semiconductor portion 46 is by forming with the 3rd semiconductor portion 26 identical compositions as reflector, and the 4th semiconductor portion 48 is by forming with the 3rd semiconductor portion 28 identical compositions as contact site.In addition, can be in constituting the layer of the 4th semiconductor portion 46, form insulating barrier 45 near the zone of second support portion 44.Insulating barrier 45 can form by same step with the insulating barrier 25 with current blocking layer function.
The 5th semiconductor portion 50 can be formed by for example n type GaAs layer.If the 5th semiconductor portion 50 in the present embodiment has the conductivity type different with the 4th semiconductor portion 46,48, then do not limit its material.For example, the 5th semiconductor portion 50 has the conductivity type different with the 4th semiconductor portion 46,48, can be by forming with the identical composition of at least a portion (for example the 4th semiconductor portion 48) of the 4th semiconductor portion 46,48.
In rectifying device portion 40, form and drive with the 3rd and the 4th electrode 34,36.
On the other hand, the 4th electrode 36 is electrically connected with the 5th semiconductor portion 50, for example can be formed at the upper surface of the 5th semiconductor portion 50.Because light is not launched from the upper surface of the 5th semiconductor portion 50, so the upper surface of the 5th semiconductor portion 50 can all be covered by the 4th electrode 36.The 4th electrode 36 can be by forming with first electrode, 30 identical compositions corresponding to same conductivity type (first conductivity type (for example n type)).
The the 4th and the 5th semiconductor portion 48,50 (junction diode 52) is connected in parallel between first and second electrode 30,32, has and light-emitting device portion 20 rightabout rectified actions.Specifically, the third electrode 34 on the 4th semiconductor portion 48 and first electrode 30 are electrically connected by distribution 70, and the 4th electrode 36 on the 5th semiconductor portion 50 and second electrode 32 are electrically connected by distribution 72.
According to present embodiment, even to light-emitting device portion 20 applied reverse bias voltage, also have electric current in the 4th and the 5th semiconductor portion 48,50 (junction diode 52) of rectifying device portion 40, this rectifying device portion 40 is connected in parallel with light-emitting device portion 20.Like this, it is withstand voltage for the electrostatic breakdown of reverse biased to significantly improve surface-emitting type device 1.Therefore, because can prevent electrostatic breakdown in the processes such as installation steps,, can also improve reliability so treatment effect is good.
On the other hand, when light-emitting device portion 20 is driven, add forward bias to light-emitting device portion 20, but, in this case, in order only to make the electric current light-emitting device portion 20 of flowing through, the puncture voltage of preferred junction diode 52 is greater than the driving voltage of light-emitting device portion 20, like this, even because when light-emitting device portion 20 drives, add forward bias to it, can not inject reverse current (or injecting hardly) to the 4th and the 5th semiconductor portion 48,50 (junction diode 52) yet, so, can carry out normal luminous action by light-emitting device portion 20.
Here, thus the breakdown voltage value that composition that can be by adjusting the 4th and the 5th semiconductor portion 48,50 or impurity concentration are suitably controlled junction diode 52.For example, if reduce the impurity concentration of the 4th and the 5th semiconductor portion 48,50, just can improve the breakdown voltage value of junction diode 52.In the present embodiment, any one of the 4th and the 5th semiconductor portion 48,50 all separated (other Ge) formation with the semiconductor portion of the luminous action that helps light-emitting device portion 20.Particularly the 5th semiconductor portion 50 can not rely on the structure of light-emitting device portion 20 fully and forms, so, can freely adjust its composition or impurity concentration.Therefore, can easily form junction diode 52, and can prevent electrostatic breakdown effectively and realize stable luminous action with ideal characterisitics.
Perhaps, the composition of the first and the 3rd semiconductor portion 22,26,28 that also can be by adjusting light-emitting device portion 20 or impurity concentration etc. make the breakdown voltage value of the driving voltage of light-emitting device portion 20 less than junction diode 52.
As shown in Figure 1, first electrode 30 forms U-shaped around the periphery of second electrode 32, and third electrode 34 forms U-shaped around the periphery of the 4th electrode 36.First and third electrode 30,34 end separately toward each other, carry out balanced configuration, the end of the side that coexists is electrically connected by distribution 70, the end of opposite side is electrically connected by distribution 74.On any distribution, (be distribution 74 among Fig. 1) first electrical connection section 76 can be set.In addition, the second and the 4th electrode 32,36 is positioned at by first and the zone that fences up of third electrode 30,34 and distribution 70,74, is electrically connected by distribution 72.Third electrode 34 can doublely be done second electrical connection section 78.In addition, the distribution 70,72,74 and first electrical connection section 76 are formed on resin bed (for example poly-imide resin layer) 60 (with reference to Fig. 2).
In the surface-emitting type device 1 that present embodiment relates to, by first and second electrical connection section 76,78 applied voltages.In the light-emitting device portion 20, add the voltage of forward to the pin diode between first and second electrode 30,32, then second semiconductor portion 24 has the function as active layer, and electronics and hole produce compound, and produces based on this compound luminous.The light that produces causes stimulated emission when coming and going between first semiconductor portion 22 and the 3rd semiconductor portion 26, light intensity strengthens.When the light income surpasses light loss, produce laser generation, from the surface of emission 29 to launching laser perpendicular to the direction of substrate 10.
In addition, the present invention has more than and is defined in the surface-emitting type laser, also goes for other surface-emitting type devices (for example semiconductor light-emitting-diode or organic LED).In addition, in above-mentioned each semiconductor, p type and n type can be replaced.In addition, in the middle of above-mentioned example, the semi-conducting material that adopts AlGaAs system is illustrated, but, also can adopt the material of other types according to oscillation wavelength, for example: the semi-conducting material of GaInP system, ZnSSe system, InGaN system, AlGaN system, InGaAs system, GaInNAs system, GaAsSb system.
The manufacture method of 1-2 surface-emitting type device
Fig. 4～Fig. 8 is the schematic diagram according to the surface-emitting type device manufacture method of the first embodiment of the present invention.
As shown in Figure 4, on substrate 10, by in the modulation composition, making its epitaxial growth, form the 3rd semiconductor layer 84,86 of first semiconductor layer 80 of first conductivity type (for example n type), second semiconductor layer 81, second conductivity type (for example p type) and the 4th semiconductor layer 88 of first conductivity type (for example n type) with active layer function.Each composition of first to the 3rd semiconductor layer 80,81,84,86 is corresponding respectively with the content of above-mentioned first to the 3rd semiconductor portion 22,24,26,28, and the content of the composition of the 4th semiconductor layer 88 and above-mentioned the 5th semiconductor portion 50 is corresponding respectively.
In addition, when making the growth of the 3rd semiconductor layer 84, be that formation has near second semiconductor layer 81 of active layer function one deck at least on the AlGaAs layer 0.95 or more at AlAs layer or Al composition.Thereafter this layer is oxidized, becomes the insulating barrier 25 (with reference to Fig. 8) with current blocking layer function.In addition, have the function of contact site, can easily form the ohmic contact of second electrode 32 and third electrode 34 by 86 formation of uppermost the 3rd semiconductor layer.
Temperature when carrying out epitaxial growth is kind, the thickness according to the kind of growing method and raw material, substrate 10 or each semiconductor layer of forming, and suitably decision of carrier density, generally speaking, and preferred 450 ℃～800 ℃.In addition, carrying out also the same with temperature quilt of needed time of epitaxial growth suitably determines.And epitaxially grown method can adopt organic metal vapor phase growth (MOVPE:Metal-Organic Vapor Phase Epitaxy) method, MBE method (Molecular Beam Epitaxy) or LPE method (Liquid PhaseEpitaxy) etc.
Then, as Fig. 5～shown in Figure 7,, form light-emitting device portion 20 and rectifying device portion 40 at least to 84,86,88 pattern-makings of the 3rd and the 4th semiconductor layer.
At first, as shown in Figure 5, to the 4th semiconductor layer 88 pattern-makings of the superiors.Specifically, behind coating resist on the 4th semiconductor layer 88,, make the resist layer R10 that forms specific pattern by to this resist pattern-making.Then, as mask (mask), form the 5th semiconductor portion 50 with resist layer R10 by etching (for example do quarter method or wet etching).
Then, as shown in Figure 6, to 84,86 pattern-makings of the 3rd semiconductor layer.Specifically, the same formation resist layer R20 with narrating above carries out etching with resist layer R20 as mask.By to 84 pattern-makings of the 3rd semiconductor portion, can form the 3rd semiconductor portion 26 and the 4th semiconductor portion 46 with reflector function.By to the 86 row pattern-makings of the 3rd semiconductor portion, can form the 3rd semiconductor portion 28 and the 4th semiconductor portion 48 with contact site function.
As shown in Figure 7, also can be to 81 pattern-makings of second semiconductor layer.Specifically, with the same formation resist layer R30 that narrates above, be that mask carries out etching with resist layer R30, when forming second semiconductor layer 82, at least a portion of first semiconductor layer 80 is exposed.Like this, can form first electrode 30 in the zone of exposing of first semiconductor layer 80.
In addition, above-mentioned pattern-making method is not limited to certain sequence, for example, and can be from a side, by the sequentially built pattern of second semiconductor layer 81, the 3rd semiconductor layer 84,86 and the 4th semiconductor layer 88 near substrate 10.
Then, as shown in Figure 8, in 400 ℃ the environment of steam for example, configuration is supported light-emitting device portion 20 and is supported the substrate 10 of rectifying device portion 40, begin the layer high (the Al composition is the layer more than 0.95) from the side and carry out oxidation, form insulating barrier 25,45 the Al composition in the 3rd and the 4th above-mentioned semiconductor portion 26,46.Oxygenation efficiency depends on the quantity delivered of temperature, the steam of stove, the Al composition and the thickness of layer that should oxidation.Have in the surface-emitting type laser of insulating barrier in light-emitting device portion 20, when driving, electric current only flows to the part (not oxidized part) that does not form insulating barrier 25.Therefore, form in the step of insulating barrier 25 in oxidation, by the formation zone of control insulating barrier 25, can Control current density.
In addition, on the regulation zone of substrate 10, form resin bed 60, can use prior aries such as infusion process, spraying process, drop ejection (for example ink-jet method), etching method to form resin bed 60 by pattern-making.The formation zone of first to fourth electrode 30,32,34,36 described later is avoided in the formation zone of resin bed 60.Resin bed 60 can be formed by poly-imide resin, fluorine resin, acrylic or epoxy resin etc., particularly, considers from the easiness of processing and the angle of insulating properties, is preferably formed by poly-imide resin or fluorine resin.
Then, form first to fourth electrode 30,32,34,36, and form the distribution 70,72,74 (with reference to Fig. 1 and Fig. 4) that the electrode of stipulating is electrically connected.The formation position of electrode and distribution or the detailed description of its annexation can be suitable for above-mentioned explanation to surface-emitting type device.Before electrode formed step, using plasma processing etc. was as required cleaned each electrode respectively and is formed position.In addition, the formation method of electrode is to form one deck conductive layer at least by vacuum vapour deposition, then, removes the part of conductive layer by peeling off method.In addition, also can adopt dried method replacement at quarter to peel off method.The formation method of distribution can be identical with the formation method of electrode.
Like this, form junction diodes 52 by the 4th and the 5th semiconductor portion 48,50, have and the direction of light-emitting device portion 20 rightabout rectified actions on junction diode 52 is connected in parallel between first and second electrode 30,32.Like this,, also have electric current and flow into junction diode 52, therefore, can significantly improve withstand voltage with respect to the electrostatic breakdown of reverse biased even to light-emitting device portion 20 applied reverse bias voltage.Therefore, can prevent the electrostatic breakdown in the process such as installation steps, improve reliability.
In addition, because by above-mentioned steps, on substrate 10, form after the growth step end of a plurality of semiconductor layers, will be to semiconductor layer pattern-making, so, compare with the situation that pattern-making step alternate repetition carries out with for example semiconductor growth layer step, can realize the simplicity of manufacturing step.
In addition, the manufacture method of the surface-emitting type device that relates to of present embodiment comprises the content of amplifying out from the explanation of above-mentioned surface-emitting type device.
(second embodiment)
2-1. surface-emitting type device
Fig. 9 is the sectional view of the related surface-emitting type device of second embodiment of the invention.In the present embodiment, surface-emitting type device 100 comprises substrate 10, light-emitting device portion 20 and rectifying device portion 140, and the structure of rectifying device portion 140 is different with first embodiment.The content of substrate 10 and light-emitting device portion 20 then with first embodiment in illustrated consistent.
The rectifying device portion 140 that present embodiment relates to comprises Schottky diode 160.Specifically, rectifying device portion 140 comprises following each one that begins to dispose from substrate 10 1 sides: by first support portion 42 that constitutes with first semiconductor portion, 22 identical components, by second support portion 44 that constitutes with second semiconductor portion, 24 identical components, the 4th semiconductor portion 152,154, and the 5th semiconductor portion 156.On any one of the 4th semiconductor portion 152,154 and the 5th semiconductor portion 156, form schottky junction, constitute Schottky diode.
The 4th semiconductor portion 152,154 can be formed by the identical composition of a part with the 3rd semiconductor portion 26,28.In example shown in Figure 9, the 4th semiconductor portion 152,154 is by forming with the identical composition of a part as the 3rd semiconductor portion 26 of reflector.In more detail, comprise in the 3rd semiconductor portion 26 under the situation of two-layer at least (for example different two-layer at least AlGaAs layer of Al composition) that composition is different that uppermost the 4th semiconductor portion 154 is to be formed by any one deck of the 3rd semiconductor portion 26 (for example low layer of Al composition).
The 5th semiconductor portion 156 also can be formed by the identical composition of a part with the 3rd semiconductor portion 26,28.In example shown in Figure 9, the 5th semiconductor portion 156 is exactly by forming with the identical composition of a part as the 3rd semiconductor portion 26 of reflector.In more detail, when the 3rd semiconductor portion 26 comprised different two-layer at least (for example different two-layer at least AlGaAs layer of Al composition) of composition, the 5th semiconductor portion 156 was formed by other one deck (for example high layer of Al composition).
Specifically, as the 3rd semiconductor 26 of reflector by for example p type Al
0.9Ga
0.1As layer and p type Al
0.15Ga
0.85Under the situation to formation of the defined amount of the mutual lamination of As layer, uppermost the 4th semiconductor portion 154 is by p type Al
0.15Ga
0.85The As layer forms, and the 5th semiconductor portion 156 is by p type Al
0.9Ga
0.1The As layer forms.Like this, because the service factor of the 5th semiconductor portion 156 is than the service factor height of the 4th semiconductor portion 154, so can form schottky junction on the 5th semiconductor portion 156.In addition, the 4th semiconductor portion 152 can be p type Al for example
0.9Ga
0.1As layer and p type Al
0.15Ga
0.85The right remainder of the defined amount of the mutual lamination of As layer.In addition, the ratio of Al composition is not limited in foregoing.
In addition,, then can reduce part count, the simplicity of implementation structure, the cost of reduction device if the 4th and the 5th semiconductor portion 152,154,156 is all formed by the identical composition of a part with the 3rd semiconductor portion 26,28.
Form the 3rd and the 4th electrode 34,136 that drives usefulness in the rectifying device portion 140.
On the other hand, the 4th electrode 136 is electrically connected with the 5th semiconductor portion 156, for example can be formed on the upper surface of the 5th semiconductor portion 156.In example shown in Figure 9, the 4th electrode 136 and the 5th semiconductor portion 156 are electrically connected by schottky junction.The 4th electrode 136 can be formed by one of them of the following layer that for example disposes since the 5th semiconductor portion 156 1 sides: the laminated film of Ti layer, Pt layer and Au layer; The laminated film of Ti layer and Au layer; The Au layer; The AlAu layer; Amorphous Si and P.In addition, the other guide of the 4th electrode 136 can be suitable for the content of the 4th electrode 36 that illustrates among first embodiment.
The the 4th and the 5th semiconductor portion 154,156 (Schottky diode 160) is connected in parallel between first and second electrode 30,32, has and light-emitting device portion 20 rightabout rectified actions.In the present embodiment, also same with first embodiment, the breakdown voltage value of preferred Schottky diode 160 is greater than the driving voltage of light-emitting device portion 20.In addition, the explanation done as first embodiment of each interelectrode electrical connection.Like this, flow even also have electric current in the 4th and the 5th semiconductor portion 154,156 (Schottky diode 160) of the rectifying device portion 140 that light-emitting device portion 20 applied reverse bias voltage and light-emitting device portion 20 are connected in parallel.Therefore, can significantly improve withstand voltage with respect to the electrostatic breakdown of the reverse biased of surface-emitting type device 100.Like this, owing to can prevent electrostatic breakdown in the installation steps, so, when being convenient to install, can also improve reliability.
In addition, the other guide of the surface-emitting type device that present embodiment relates to comprises the content of amplifying out from the explanation of the related surface-emitting type device of first embodiment.
2-2. the manufacture method of surface-emitting type device
Figure 10～Figure 14 is the schematic diagram that has been suitable for the related surface-emitting type device manufacture method of the second embodiment of the present invention.
As shown in figure 10, on substrate 10, by making its epitaxial growth in the composition, thereby form the 3rd semiconductor layer 84,86 of first semiconductor layer 80 of first conductivity type (for example n type), second semiconductor layer 81 and second conductivity type (for example p type) with active layer function in modulation.The details of its composition can be with reference to first embodiment.
Then, as Figure 11～shown in Figure 14, form light-emitting device portion 20 and rectifying device portion 140 at least to 84,86 pattern-makings of the 3rd semiconductor layer.
At first, as Figure 11～shown in Figure 13, to 84,86 pattern-makings of the 3rd semiconductor layer.
As shown in figure 11, on the 3rd semiconductor layer 84,86, form resist layer R110.Resist layer R110 is formed in each zone of light-emitting device portion 20 and rectifying device portion 140.Then, resist layer R110 as mask, is carried out etching (for example do quarter method or wet etching) to the 3rd semiconductor layer 84,86.Like this, in the zone of light-emitting device portion 20, form the 3rd semiconductor portion 26,28, in the zone of rectifying device portion 140, form the 3rd semiconductor layer 170,180.The 3rd semiconductor layer 170 is by forming with the 3rd semiconductor portion 26 identical compositions as reflector, and the 3rd semiconductor layer 180 is by forming with the 3rd semiconductor portion 28 identical compositions as contact site.
Then, as shown in figure 12, form resist layer R120, then, the 3rd semiconductor layer 180 is all removed by etching in the zone of avoiding the 3rd semiconductor layer 170,180 upper surfaces.The 3rd semiconductor layer 170 comprises different two-layer at least 174,176 of composition, by etching the part of the 3rd semiconductor layer 170 is removed and is exposed any one deck (being layer 176 among Figure 12).The 3rd semiconductor portion is under the situation of reflector, the 3rd semiconductor layer 170 for example by the different two-layer at least AlGaAs layer of Al composition (for example by p type Al
0.9Ga
0.1As layer and p type Al
0.15Ga
0.85The layer to forming of the defined amount of the mutual lamination of As layer) form, exposing layer 176 for example can be that the high layer of Al composition (specifically, is p type Al
0.9Ga
0.1The As layer).In the middle of the illustrated example of present embodiment, layer 176 is the 5th semiconductor portion 156, and layer 174 is the 4th semiconductor portion 154 (with reference to Fig. 3).
In addition, as shown in figure 13, form R130 beyond the etching area, resist layer R130 as mask, is carried out etching with the part of layer 176 and removes, expose the layer 174 (layer that the Al composition is low (p type Al specifically for example
0.15Ga
0.85The As layer)).Like this, can go up formation third electrode 34 at the 4th semiconductor portion 154 (layer 174).
Then, as the explanation of being done among first embodiment, also can be as shown in figure 14 to 81 pattern-makings of second semiconductor layer.In detail, form R140, resist layer R140 is carried out etching as mask, when forming second semiconductor layer 82, expose at least a portion of first semiconductor layer 80.
In addition, the method for above-mentioned pattern-making does not limit its order, for example, and also can be from a side, after 81 pattern-makings of second semiconductor layer, to 84,86 pattern-makings of the 3rd semiconductor layer near substrate 10.
Then,, form insulating barrier 25,45 as the explanation of doing among first embodiment, and resin bed 60.In addition, form first and second electrode 30,32 of driven for emitting lights device portion 20, form the 3rd and the 4th electrode 34,136 that drives rectifying device portion 140, and form the distribution 70,72 (with reference to Fig. 9) that is electrically connected the regulation electrode.Its detailed content is as the explanation of doing among first embodiment.But in the present embodiment electrode forms in the step, forms schottky junction on any one of the 4th semiconductor portion 152,154 and the 5th semiconductor portion 156.Can form the 4th electrode 136 so that on the 5th semiconductor portion 156, form schottky junction, form third electrode 34 so that on the 4th semiconductor portion 154, form schottky junction.
Like this, form Schottky diodes 160 by the 4th and the 5th semiconductor portion 154,156, have and the direction of light-emitting device portion 20 rightabout rectified actions on this Schottky diode 160 is connected in parallel between first and second electrode 30,32.Like this, even to light-emitting device portion 20 applied reverse bias voltage, also can therefore, can significantly improve withstand voltage to Schottky diode 160 injection currents with respect to the electrostatic breakdown of reverse biased.Like this, can prevent the electrostatic breakdown in the installation steps, improve reliability.
In addition, compare,, make on substrate 10 the semiconductor number of plies of growth less by above-mentioned steps with first embodiment, in addition, owing to can not be used in the removal step that light-emitting device portion 20 is implemented semiconductor layers, so, can realize the summary of manufacturing step.
In addition, the other guide of the manufacture method of the surface-emitting type device that present embodiment relates to comprises the content of amplifying out the explanation of the surface-emitting type device manufacture method that relates to from first embodiment.
(the 3rd embodiment)
Figure 15 is the schematic diagram that has been suitable for the related light transmitting device of the third embodiment of the present invention.Light transmitting device 200 can be that electronic equipments 202 such as computer, display, storage device, printer interconnect.Electronic equipment 202 also can be an information communication device.Light transmitting device 200 can be the device that plug 206 is set at the two ends of cable 204.Cable 204 comprises optical fiber.Plug 206 is built-in with optical device (comprising above-mentioned surface-emitting type device).Plug 206 can also be built-in with semiconductor chip.
The optical device that is connected to a side end of optical fiber is luminescent device (an above-mentioned surface-emitting type device), and the optical device that is connected to the end side of optical fiber is a sensitive device.The signal of telecommunication from the electronic equipment 202 of a side is exported is converted to light signal by luminescent device.Light signal passed optical fiber input sensitive device.Sensitive device is converted to the signal of telecommunication with the light signal of input.Then, the signal of telecommunication is input in the electronic equipment 202 of opposite side.Like this, the light transmitting device 200 that utilizes present embodiment to relate to by light signal, can be implemented the message transmission of electronic equipment 202.
(the 4th embodiment)
Figure 16 has been suitable for the schematic diagram that light transmitting device that the third embodiment of the present invention relates to uses form.Light transmitting device 212 is connected between the electronic equipment 210.For example can list as electronic equipment 210: the cashier's machine (POS (Point of Sale Scanning) uses) in the CRT of monitoring lcd device or numeral correspondence (use in the field in finance, mail-order, medical treatment, education), liquid crystal projection apparatus, Plasmia indicating panel (PDP), digital TV, snacks shop, gamma camera, channel selector, game machine, printer etc.
(the 5th embodiment)
5-1. surface-emitting type device
Figure 17 is the plane graph that has been suitable for the surface-emitting type device that the fifth embodiment of the present invention relates to.Figure 18 is the sectional view of the XVIII-III line of Figure 17.In addition, the circuit diagram of the surface-emitting type device that relates to of present embodiment is equivalent to Fig. 3 of first embodiment.In the present embodiment, rectifying device portion 240 is different with first embodiment with the structure of electrode (distribution) pattern.
Surface-emitting type device 220 comprises substrate 10, light-emitting device portion 20 and rectifying device portion 240.It is consistent that explanation is done by institute among the content of substrate 10 and light-emitting device portion 20 and first embodiment.
Rectifying device portion 240 comprises junction diode 252.In more detail, rectifying device portion 240 comprises the following part that begins to dispose from substrate 10 1 sides: by first support portion 42 that constitutes with first semiconductor portion, 22 identical compositions; By second support portion 44 that constitutes with second semiconductor portion, 24 identical compositions; The 4th semiconductor portion 246,248; Capacity reduction portion 260; And the 5th semiconductor portion 250.First and second support portion 42,44 and first
It is consistent that embodiment does explanation.
The 4th semiconductor portion 246,248 has second conductivity type (for example p type), and the 5th semiconductor portion 250 has first conductivity type (for example n type).Like this, by the 4th and the 5th semiconductor portion 248,250, and the capacity reduction portion 260 that is arranged between them can form the pn junction diode.In addition, be not only the action that the 4th semiconductor portion 248, the four semiconductor portion 246 also help the pn junction diode.
The 4th semiconductor portion 246,248 can be by forming with the 3rd semiconductor portion 26,28 identical compositions.In example shown in Figure 180, the 4th semiconductor portion 246 is by forming with the 3rd semiconductor portion 26 identical compositions as reflector, and the 4th semiconductor portion 248 is by forming with the 3rd semiconductor portion 28 identical compositions as contact site.Uppermost the 4th semiconductor portion 248 can be formed by (for example p type) GaAs layer.
In the present embodiment, if the 5th semiconductor portion 250 has the conductivity type different with the 4th semiconductor portion 246,248, then do not limit its material.For example, if the 5th semiconductor portion 250 has the conductivity type different with the 4th semiconductor portion 246,248, also can be by forming ((for example n type) GaAs layer) with the identical composition of at least a portion (for example the 4th semiconductor portion 248) of the 4th semiconductor portion 246,248.
In the present embodiment, be provided with capacity reduction portion 260 between the 4th and the 5th semiconductor portion 248,250.Like this, can realize reducing the capacity of junction diode 252, therefore, can prevent that junction diode 252 from hindering the high-speed driving of light-emitting device portion 20.Particularly, in the present embodiment, because rectifying device portion 240 is connected in parallel with light-emitting device portion 20, so the capacity of light-emitting device portion 20 and rectifying device portion 240 makes a difference as aggregate value.Therefore, reduce the capacity of junction diode 252, very effective for the high-speed drivingization that realizes surface-emitting type device.
In order to ensure being electrically connected the zone, capacity reduction portion 260 also can be arranged on a part of zone of the 4th semiconductor portion 248.Can be based on material, thickness and the area of the capacity decision capacity reduction portion 260 of junction diode 252.In order to reduce the capacity of junction diode 252, the low material of capacity reduction portion 260 preferred capacity.
Perhaps, capacity reduction portion 260 can have the conductivity type (for example p type) identical with the 4th semiconductor portion 248, the semiconductor portion of the impurity concentration of comparing its doping with the 4th semiconductor portion 248 low (for example the above impurity concentration of 1 numerical digit is low).Or capacity reduction portion 260 also can have the conductivity type (for example n type) identical with the 5th semiconductor portion 250, the semiconductor portion of the impurity concentration of comparing its doping with the 5th semiconductor portion 250 low (for example the above impurity concentration in 1 purlin is low).
In addition,, preferably amplify the thickness of reduction portion 260, reduce its area in order to reduce the capacity of junction diode 252.For example, capacity reduction portion 260 can be bigger than the thickness of the 4th semiconductor portion 248 (or the 5th semiconductor portion 250), and is littler than the area of the 4th semiconductor portion 248.
Forming under the situation of capacity reduction portion 260 by the AlGaAs layer, though the ratio of each composition is not distinguishingly limited,, if the Al composition is than high, capacity that then can reduction capacity reduction portion 260 is so preferred Al composition is than high ratio.The ratio of each composition of the AlGaAs layer of capacity reduction portion 260 can be Al for example
xGa
1-xAs (x 〉=0.5).Like this, so because the high capacity that not only can reduce junction diode 252 of Al composition ratio, and, for above-mentioned the 4th semiconductor portion 248, also can obtain sufficient etching selectivity as substrate.
Then, the structure to electrode (distribution) pattern describes.
Form first and second electrode 230,232 that drives usefulness in light-emitting device portion 20.First electrode 230 is electrically connected with first semiconductor portion 22, as the explanation of doing among first embodiment, can be formed on the upper surface of first semiconductor layer 80.Second electrode 232 is electrically connected with the 3rd semiconductor portion 26,28, for example is formed on the upper surface as the 3rd semiconductor portion 28 of contact site.Second electrode 232 also can form annular along the end of the upper surface of the 3rd semiconductor portion 28.It is consistent that explanation is done by institute among the material of first and second electrode 230,232 and first embodiment.
Form the 3rd and the 4th electrode 234,236 that drives usefulness in rectifying device portion 240.Third electrode 234 is electrically connected with the 4th semiconductor portion 246,248.For example, the 5th semiconductor portion 250 can be formed on a part of zone of the 4th semiconductor portion 248, and third electrode 234 can be formed on the zone of exposing of the 4th semiconductor portion 248.
The 4th electrode 236 is electrically connected with the 5th semiconductor portion 250, for example can be formed on the upper surface of the 5th semiconductor portion 250.Because light is not launched from the upper surface of the 5th semiconductor portion 250, so the upper surface of the 5th semiconductor portion 250 can all be covered by the 4th electrode 236.The 4th electrode 236 can be to be formed by identical composition with first electrode 230, and this first electrode 230 is corresponding with same conductivity (first conductivity type (for example p type)).
Junction diode (pin diode) 252 is connected in parallel between first and second electrode 230,232, has and light-emitting device portion 20 rightabout rectified actions.In more detail, first and third electrode 230,234 be electrically connected by distribution 270, the second and the 4th electrode 232,236 is electrically connected by distribution 272.
In example shown in Figure 17, first electrode 230 comprises around the part of the peripheral shape precedent of light-emitting device portion 20 such as C shape and the part that extends out to the direction of third electrode 234.And, the major part of distribution 270 be configured in first and any one zone of third electrode 230,234 on.Distribution 270 has electrical connection section 276 on its part, electrical connection section 276 for example is formed on the third electrode 234.In addition, another part distribution 272 also has electrical connection section 278 on its part, and electrical connection section 278 for example is formed on the 4th electrode 236.Electrical connection section 276,278 can form platform shape.
In addition, the other guide of the surface-emitting type device that relates to of present embodiment comprises the content of amplifying out the explanation of the surface-emitting type device that relates to from first embodiment.
5-2. the manufacture method of surface-emitting type device
Figure 19～Figure 20 is the schematic diagram that has been suitable for the surface-emitting type device manufacture method that the fifth embodiment of the present invention relates to.
As shown in figure 19, on substrate 10, by in the modulation composition, making its epitaxial growth, thereby form the 3rd semiconductor layer 84,86 of first semiconductor layer 80 of first conductivity type (for example n type), second semiconductor layer 81, second conductivity type (for example p type), the 4th semiconductor layer 88 that capacity reduces layer 280 and first conductivity type (for example n type) with active layer function.The composition that capacity reduces layer 280 is equivalent to the content of above-mentioned capacity reduction portion 260.The content that the details of other layers is equivalent to illustrate.
Then,, at least the 3rd semiconductor layer 84,86, capacity are reduced by 88 pattern-makings of layer the 280 and the 4th semiconductor layer, form light-emitting device portion 20 and rectifying device portion 240 as Figure 20～shown in Figure 22.
At first, as shown in figure 20, can to the 4th semiconductor layer 88 of the superiors with and the capacity of lower floor reduce layer 280 pattern-making.In more detail, on the 4th semiconductor layer 88, apply resist layer,, form the resist layer R210 of predetermined pattern by to this resist layer pattern-making.Then, R210 as mask, is carried out etching (for example do quarter method or wet etching).The face (the 3rd semiconductor layer 86 that comprises light emitting surface 29) that newly exposes after the etching can be processed into smooth face by wet etching.In addition, different if capacity reduces layer 280 with the 3rd semiconductor layer 86 (comprising the most surperficial layer) material as its substrate, then can obtain etched selection ratio, therefore, can be easy to that capacity is reduced layer 280 and carry out optionally etching.For example, the 3rd semiconductor layer 86 is under the situation about being formed by the GaAs layer, and capacity reduces layer 280 and can be formed by the AlGaAs layer.Capacity reduces the ratio of each composition of the AlGaAs layer of layer 280, can be Al for example
xGa
1-xAs (x 〉=0.5) like this, with respect to above-mentioned the 3rd semiconductor layer 86 as substrate, can obtain enough etching selectivities.Therefore, pattern-making better.
Like this, after forming the 5th semiconductor portion 250 and capacity reduction portion 260, as shown in figure 21, to 84,86 pattern-makings of the 3rd semiconductor layer.In more detail and above-mentioned same formation resist layer R220, resist layer R220 as mask, is carried out etching.By to 84 pattern-makings of the 3rd semiconductor layer, can form the 3rd semiconductor portion 26 and the 4th semiconductor portion 246 with reflector function, by to 86 pattern-makings of the 3rd semiconductor layer, can form the 3rd semiconductor portion 28 and the 4th semiconductor portion 248 with contact site function.
As shown in figure 22, second semiconductor layer 81 also can pattern-making.In more detail and above-mentioned same formation resist layer R230, resist layer R230 as mask, is carried out etching, can when forming second semiconductor layer 82, at least a portion of first semiconductor layer 80 be exposed.In view of the above, form first electrode 230 in the zone of exposing of first semiconductor layer 80.
In addition, be not limited to the order of above-mentioned pattern-making method, for example, can reduce the sequentially built pattern of layer the 280 and the 4th semiconductor layer 88 by second semiconductor layer 81, the 3rd semiconductor layer 84,86, capacity near substrate 10 1 sides.
Then,, form insulating barrier 25,45, and form resin bed 60 as the explanation of doing in first embodiment.In addition, form first and second electrode 230,232 of driven for emitting lights device portion 20, form the 3rd and the 4th electrode 234,236 that drives rectifying device portion 240, and form will regulation the distribution 270,272 (with reference to Figure 17 and 18) that is electrically connected of electrode.
In addition, the other guide of the manufacture method of the surface-emitting type device that present embodiment relates to comprises the content of amplifying out the explanation of the surface-emitting type device that relates to from first embodiment.
The present invention has more than and is limited to the foregoing description, and various variations can be arranged.For example, the present invention includes with embodiment in the identical in fact structure of the structure that illustrates (for example, can be function, method and the structure that comes to the same thing, or purpose and the structure that comes to the same thing).In addition, the present invention includes the non-intrinsically safe structure partly of the structure of alternative embodiment explanation.In addition, the present invention includes the structure that illustrates with embodiment has the structure of same function or can realize identical purpose structure.In addition, present invention resides on the structure of embodiment explanation additional
Prior art constructions.
Description of reference numerals
10 substrates, 20 light-emitting device portion
22 first semiconductor portion, 24 second semiconductor portion
25 insulating barriers 26,28 the 3rd semiconductor portion
29 surface of emissions, 30 first electrodes
32 second electrodes, 34 third electrodes
36 the 4th electrodes, 40 rectifying device sections
44 second support portions, 42 first support portions
45 insulating barriers 46,48 the 4th semiconductor portion
50 the 5th semiconductor portion, 52 junction diodes
60 resin beds 70,72,74 distributions
80 first semiconductor layers, 81 second semiconductor layers
84,86 the 3rd semiconductor layers 88 the 4th semiconductor layer
136 the 4th electrodes 152,154 the 4th semiconductor portion
156 the 5th semiconductor portion, 160 Schottky diodes
170,180 the 3rd semiconductor layers, 230 first electrodes
232 second electrodes, 234 third electrodes
236 the 4th electrodes 246,248 the 4th semiconductor portion
250 the 5th semiconductor portion, 252 junction diodes
260 volume lowering sections 270,272 distributions
280 volume lowering layers
Claims (15)
1. surface-emitting type device comprises:
Substrate;
Light-emitting device portion, be included in first conductivity type that described substrate top begins to dispose from described substrate one side first semiconductor portion, have second semiconductor portion of active layer function and the 3rd semiconductor portion of second conductivity type;
Rectifying device portion, second support portion, the 4th semiconductor portion and the 5th semiconductor portion that are included in first support portion that the composition by identical with described first semiconductor portion that described substrate top begins to dispose from described substrate one side constitutes, constitute by the composition identical with described second semiconductor portion; And
First electrode and second electrode are used to drive described light-emitting device portion,
Wherein, described the 4th semiconductor portion and described the 5th semiconductor portion are connected in parallel between described first electrode and described second electrode, have and the rightabout rectified action of described light-emitting device portion.
2. surface-emitting type device according to claim 1, wherein,
Described the 4th semiconductor portion is second conductivity type;
Described the 5th semiconductor portion is first conductivity type.
3. surface-emitting type device according to claim 2, wherein,
Described the 4th semiconductor portion is formed by the composition identical with described the 3rd semiconductor portion.
4. according to each described surface-emitting type device in the claim 1 to 3, wherein,
Between described the 4th semiconductor portion and described the 5th semiconductor portion, capacity reduction portion is set.
5. surface-emitting type device according to claim 4, wherein,
Described capacity reduction portion is formed by intrinsic semiconductor.
6. surface-emitting type device according to claim 4, wherein,
Described capacity reduction portion forms by comparing the low semiconductor of impurity concentration with described the 4th semiconductor portion or described the 5th semiconductor portion.
7. according to each described surface-emitting type device in the claim 4 to 6, wherein,
Described the 4th semiconductor portion comprises and is positioned at uppermost GaAs layer,
Described capacity reduction portion comprises the AlGaAs layer.
8. surface-emitting type device according to claim 1, wherein,
Form schottky junction in described the 4th semiconductor portion and described the 5th semiconductor portion any.
9. surface-emitting type device according to claim 8, wherein,
Described the 3rd semiconductor portion comprises different two-layer at least of composition,
Described the 4th semiconductor portion comprises different with the described composition identical composition of arbitrary layer in two-layer at least,
Described the 5th semiconductor portion comprises different with the described composition identical composition of another layer in two-layer at least.
10 according to each described surface-emitting type device in the claim 1 to 9, wherein,
Described light-emitting device portion has the function of surface-emitting type semiconductor laser,
Described first semiconductor portion has the function of first reflector,
Described the 3rd semiconductor portion has the function of second reflector.
11. according to the described surface-emitting type device of the claim 10 that is subordinated to claim 9, wherein,
Described the 3rd semiconductor portion comprises the two-layer at least AlGaAs layer that the Al composition is different,
Described the 5th semiconductor portion comprises compares the high AlGaAs layer of Al composition with described the 4th semiconductor portion,
On described the 5th semiconductor portion, form schottky junction.
12. the manufacture method of a surface-emitting type device may further comprise the steps:
(a) first semiconductor layer, second semiconductor layer, the 3rd semiconductor layer of second conductivity type and the 4th semiconductor layer of first conductivity type of formation first conductivity type above substrate with active layer function;
(b) pass through at least to described the 3rd semiconductor layer and described the 4th semiconductor layer pattern-making, form light-emitting device portion and rectifying device portion, described light-emitting device portion be included in first conductivity type that described substrate top begins to dispose from described substrate one side first semiconductor portion, have second semiconductor portion of active layer function and the 3rd semiconductor portion of second conductivity type; Second support portion, the 4th semiconductor portion of second conductivity type and the 5th semiconductor portion of first conductivity type that described rectifying device portion is included in first support portion that the composition by identical with described first semiconductor portion that described substrate top begins to dispose from described substrate one side constitutes, is made of the composition identical with described second semiconductor portion;
(c) be formed for driving first electrode and second electrode of described light-emitting device portion; And
(d) on the direction that has with the rightabout rectified action of described light-emitting device portion, described the 4th semiconductor portion and described the 5th semiconductor portion are connected in parallel between described first electrode and described second electrode.
13. the manufacture method of surface-emitting type device according to claim 12, wherein,
In described step (a), also be included in the step of formation capacity reduction layer between described the 3rd semiconductor layer and described the 4th semiconductor layer;
In described step (b), also comprise by described capacity being reduced layer pattern-making, the step of formation capacity reduction portion between described the 4th semiconductor portion and described the 5th semiconductor portion.
14. the manufacture method of surface-emitting type device according to claim 13, wherein,
Described the 3rd semiconductor layer comprises and is positioned at uppermost GaAs layer,
Described capacity reduces layer and comprises the AlGaAs layer,
In described step (b), described capacity is reduced layer pattern-making by Wet-type etching.
15. the manufacture method of a surface-emitting type device may further comprise the steps:
(a) above substrate, form first conductivity type first semiconductor layer, have second semiconductor layer of active layer function and the 3rd semiconductor layer of second conductivity type;
(b) pass through at least to described the 3rd semiconductor layer pattern-making, form light-emitting device portion and rectifying device portion, described light-emitting device portion be included in first conductivity type that described substrate top begins to dispose from described substrate one side first semiconductor portion, have second semiconductor portion of described active layer function and the 3rd semiconductor portion of second conductivity type; Second support portion, the 4th semiconductor portion of second conductivity type and the 5th semiconductor portion of second conductivity type that described rectifying device portion is included in first support portion that the composition by identical with described first semiconductor portion that described substrate top begins to dispose from described substrate one side constitutes, is made of the composition identical with described second semiconductor portion;
(c) be formed for driving first electrode and second electrode of described light-emitting device portion;
(d) form schottky junction on any in described the 4th semiconductor portion and described the 5th semiconductor portion; And
(e) on the direction that has with the rightabout rectified action of described light-emitting device portion, described the 4th semiconductor portion and described the 5th semiconductor portion are connected in parallel between described first electrode and described second electrode.
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| JP2004221761 | 2004-07-29 | ||
| JP2004273352 | 2004-09-21 |
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| CN103022891A (en) * | 2012-12-04 | 2013-04-03 | 北京工业大学 | High-power semiconductor laser chip integrated with protection diode |
| CN104851880A (en) * | 2014-02-14 | 2015-08-19 | 英飞凌科技股份有限公司 | III-nitride based ESD protection device |
| CN106611934A (en) * | 2015-10-21 | 2017-05-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Vertical cavity surface emitting laser using graphene for electrode bridging and preparation method thereof |
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| EP0406506A1 (en) * | 1989-07-07 | 1991-01-09 | International Business Machines Corporation | Opto-electronic light emitting semiconductor device |
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| JPH0927657A (en) * | 1995-07-12 | 1997-01-28 | Oki Electric Ind Co Ltd | Manufacture of semiconductor laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2012055187A1 (en) * | 2010-10-28 | 2012-05-03 | 映瑞光电科技(上海)有限公司 | Lighting circuit |
| US9345086B2 (en) | 2010-10-28 | 2016-05-17 | Enraytek Optoelectronics Co., Ltd. | Lighting circuit |
| CN103022891A (en) * | 2012-12-04 | 2013-04-03 | 北京工业大学 | High-power semiconductor laser chip integrated with protection diode |
| CN104851880A (en) * | 2014-02-14 | 2015-08-19 | 英飞凌科技股份有限公司 | III-nitride based ESD protection device |
| CN106611934A (en) * | 2015-10-21 | 2017-05-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Vertical cavity surface emitting laser using graphene for electrode bridging and preparation method thereof |
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| CN100384040C (en) | 2008-04-23 |
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