CN1725458A - Method for removing lattice defect in pad area of semiconductor device - Google Patents
Method for removing lattice defect in pad area of semiconductor device Download PDFInfo
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- CN1725458A CN1725458A CN 200410053076 CN200410053076A CN1725458A CN 1725458 A CN1725458 A CN 1725458A CN 200410053076 CN200410053076 CN 200410053076 CN 200410053076 A CN200410053076 A CN 200410053076A CN 1725458 A CN1725458 A CN 1725458A
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Abstract
This invention discloses a method for removing lattice defect in the pad zone, after forming an Al alloy purification layer and before forming a polyimide protection layer on the pad, it is tested that if the lattice defect exists in the pad, if so, the organic solvent of EKC and ACT cleaning process is made to remove the lattice defect in the zone.
Description
Technical field
The present invention relates to remove the method for the lattice defect in pad (PAD) district of semiconductor device, be particularly related to organic solvent (EKC, ACT etc.) cleaning is removed the method for the lattice defect in pad (PAD) district of semiconductor device, particularly use organic solvent (EKC, ACT etc.) cleaning to remove the method for the lattice defect in pad (PAD) district of dynamic random access memory (hereinafter to be referred as DRAM).
Background technology
Semiconductor device comprises various types of active devices, for example, dynamic random access memory (DRAM) is a kind of semiconductor device with sandwich construction, for the member that will form in each rete links together to constitute a complete DRAM, with make DRAM be connected and constitute the electronic circuit module of needs with other semiconductor device or other electronic components, finish these and connect just necessary many pads that constitutes, pad is extremely important connecting elements, therefore, require pad to have good electrical conductivity and high reliability, the lattice defect in the pad area can cause negative effect to pad conductivity and high reliability.
The pad of general semiconductor device forms technology and may further comprise the steps; Step 1 forms conductive layer on the substrate of other members that are formed with semiconductor device, for example, and the aluminum or aluminum alloy layer; Step 2 applies photoresist (PR) on the aluminum or aluminum alloy layer; Step 3 is carried out photoetching and corrosion with the mask with land pattern to conductive layer, to constituting the conductive layer composition of pad; Step 4 is carried out ashing (Ashing) and is handled, and removes the photoresist on the conductive layer; Step 5 is carried out organic solvent and is cleaned, and removes photoresist; Step 6 forms the aluminium alloy passivation layer on established conductive layer with land pattern; Step 7 forms the polyimides protective layer on the conductive welding disk that is formed with the aluminium alloy passivation layer, form pad thus.
Form in the technology at existing pad, because in step 3 to conductive layer photoetching corrosion composition, used corrosive agent is fluorine-containing corrosive agent, the fluorine ion of overflowing in the corrosive agent can cause pad area lattice defect to occur in processing step subsequently, and the lattice defect in the pad area can cause negative effect to the conductivity and the high reliability of pad.In order to prevent in pad area, to produce lattice defect, the blanking time (Q time) between strict controlled step 6 in the existing processes (forming the aluminium alloy passivation layer on the established conductive layer with land pattern) and the step 7 (at formation polyimides protective layer on the conductive welding disk that is formed with the aluminium alloy passivation layer).But; this qualification aluminium alloy passivation layer forms step, and (step 6) and polyimides protective layer form step, and (method of the blanking time between the step 7) (Q time) is not reliable especially; in case surpassed the Q time, will in pad area, produce lattice defect.And, even after the polyimides protective layer forms, also can find to have in the pad area lattice defect.These defectives can cause negative effect to the reliability of DRAM.
Summary of the invention
In order to overcome above-mentioned defective the inventive method is proposed.The objective of the invention is; a kind of method of removing the lattice defect in the pad area is proposed; after the aluminium alloy passivation layer of above-mentioned existing pad formation method forms step; before the polyimides protective layer forms step; detect in the pad area and whether have lattice defect; if in pad area, there is lattice defect; then adopt organic solvent (EKC; ACT etc.) clean; that is to say; with containing the pad area that the basic amine alkali organic solvent clean of amine (Amine) has formed the aluminium alloy passivation layer, to eliminate the lattice defect in the pad.
According to a technical scheme of the present invention; after the aluminium alloy passivation layer of pad forms step; form thereon before the polyimides protective layer; detect in the pad area and whether have lattice defect; if there is lattice defect in the pad area; then carry out organic solvent (EKC, ACT etc.) clean, to remove the lattice defect in the pad area.Described organic solvent (EKC, ACT etc.) clean is to use amine alkali, promptly contains the organic solvent of amido, and for example, EKC 270/265, or organic solvent such as ACT 940, carries out clean.Remove because the fluorine ion (F that overflows in the corrosive agent
+) lattice defect that in pad area, produces.
Description of drawings
Accompanying drawing is a part of specification, with the word segment of specification principle of the present invention and feature is described, demonstrates the embodiment that represents the principle of the invention and feature in the accompanying drawing.Wherein,
Fig. 1 is that the pad of conventional semiconductor device forms process chart;
Fig. 2 is the pad formation process chart by semiconductor device of the present invention;
Fig. 3 is organic solvent (EKC, ACT an etc.) clean flow chart;
Fig. 4 is the microphotograph that lattice defect is arranged in the pad area of taking with light microscope (OM);
Fig. 5 is the microphotograph that lattice defect is arranged in the pad area of taking with tiltable electronic scanner microscope (Jo-SEM); With
Fig. 6 is the spectrogram that carries out component analysis with the X-ray spectral analysis method of loosing.
Embodiment
Fig. 2 is the pad formation process chart by semiconductor device of the present invention.The shown pad formation technological process by semiconductor device of the present invention of Fig. 2 is to have increased step S1 (detect in the pad area and whether have lattice defect) between the step 6 of the pad formation technological process of the shown conventional semiconductor device of Fig. 1 and step 7; With step S2 (, carrying out organic solvent (EKC, ACT etc.) clean) when step S1 detects when having lattice defect in the pad area.If, detect when not having lattice defect in the pad area at step S1, directly carry out step 7, form the polyimides protective layer, finish the manufacturing of pad.Fig. 3 is the flow chart that carries out organic solvent (EKC, ACT etc.) clean.
Specific embodiment
Below describe method in detail referring to Fig. 2 and Fig. 3 according to the lattice defect in pad (PAD) district of removing semiconductor device with organic solvent (EKC, ACT etc.) cleaning of the present invention.Fig. 2 is the pad formation process chart by semiconductor device of the present invention.Fig. 3 is organic solvent (EKC, ACT an etc.) clean flow chart.
The pad that Fig. 2 shows according to semiconductor device of the present invention to form technological process be pad at the shown conventional semiconductor device of Fig. 1 step 6 that forms technological process with step 7 between increased step S1 (whether having lattice defect in the detection pad area); With step S2 (, carrying out organic solvent (EKC, ACT etc.) clean) when step S1 detects when having lattice defect in the pad area.Step S1 wherein, detect in the pad area with light microscope (OM) whether lattice defect is arranged, when in finding pad area, lattice defect being arranged, shooting has the microphotograph of the pad of lattice defect, and takes the microphotograph of the pad area that lattice defect is arranged with tiltable electronic scanner microscope (Jo-SEM).Then, carry out step S2, carry out organic solvent (EKC, ACT etc.) clean.Fig. 3 is organic solvent (EKC, ACT an etc.) clean flow chart.
Carry out the following steps that comprise in organic solvent (EKC, ACT etc.) the clean flow process that Fig. 3 shows:
Step S2-1, the substrate that has formed on the pad conductive layer behind the aluminium alloy passivation layer is immersed in the organic solvent, and used cleaning agent is an amine alkali, promptly contains the organic solvent of amido, for example, EKC270/265, or ACT 940 are when soaking with organic solvent, the temperature range of organic solvent is 40 ℃-75 ℃, the temperature of preferred organic is 65 ℃, and soak time is 5 minutes-40 minutes, and preferred soak time is 20 ± 5 minutes;
Step S2-2: be immersed among the NMP (positive N-methyl-2-2-pyrrolidone N-), the temperature of immersion is at normal temperatures, and the time of immersion is 5 minutes to 10 minutes;
Step S2-3: deionized water rinsing, the time of flushing is 5 minutes to 10 minutes
Step S2-4: isopropyl alcohol drying, dry 5 ~ 10 minutes at normal temperatures; Finish.
By the organic solvent (EKC that uses described above; ACT etc.) clean; eliminated the lattice defect that exists in the pad area; add the made pad of polyimides protective layer on the pad area metal passivation layer of lattice defect having eliminated; the pad that can guarantee semiconductor device has good electrical conductivity and high reliability, can constitute the semiconductor device with high reliability thus.
More than show and described basic principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that describes in the foregoing description and the specification just illustrates principle of the present invention; the present invention also has various changes and modifications without departing from the spirit and scope of the present invention, and these changes and improvements all fall in the claimed scope of the present invention.The scope of protection of present invention is defined by appending claims and equivalent thereof.
Claims (12)
1, remove the method for the lattice defect in the pad area of semiconductor device, may further comprise the steps:
Step 1: on the substrate of other members that are formed with semiconductor device, form conductive layer, for example, the aluminum or aluminum alloy layer;
Step 2: on the aluminum or aluminum alloy conductive layer, apply photoresist (PR);
Step 3: with mask conductive layer is carried out photoetching and corrosion, to constituting the conductive layer composition of pad with land pattern;
Step 4: carry out ashing (Ashing) and handle, remove the photoresist on the conductive layer;
Step 5: carry out organic solvent and clean, remove photoresist;
Step 6: on established conductive layer with land pattern, form the aluminium alloy passivation layer;
Step 7: on the conductive welding disk that is formed with the aluminium alloy passivation layer, form the polyimides protective layer; Make the pad of semiconductor device,
It is characterized in that, after step 6 with before the step 7, also comprise:
Step S1 detects in the pad area whether have lattice defect;
Step S2 detects in step S1 when in the pad area lattice defect being arranged, and established pad structure is carried out organic solvent (EKC, ACT etc.) clean with amine alkali, to eliminate the lattice defect in the pad area.
2, according to the method for claim 1, it is characterized in that, step S1, detect in the pad area and whether have lattice defect, be with the lattice defect in light microscope (OM) and tiltable electronic scanner microscope (Jo-SEM) the detection pad area, and carry out component analysis with the X-ray spectral analysis method of loosing.
According to the method for claim 1, it is characterized in that 3, step S2 is further comprising the steps of:
Step S2-1: the substrate that has formed on the pad conductive layer behind the alloy passivation layer is immersed in the organic solvent;
Step S2-2: be immersed among the NMP (positive N-methyl-2-2-pyrrolidone N-);
Step S2-3: deionized water rinsing;
Step S2-4: isopropyl alcohol drying.
According to the method for claim 3, it is characterized in that 4, among the step S2-1, used cleaning agent is an amine alkali, promptly contains the organic solvent of amido, for example, EKC270/265, or ACT 940.
According to the method for claim 4, it is characterized in that 5, among the step S2-1, soak with organic solvent, the temperature range of organic solvent is 40 ℃-75 ℃.
According to the method for claim 5, it is characterized in that 6, among the step S2-1, soak with organic solvent, the temperature of preferred organic is 65 ℃.
According to the method for claim 4, it is characterized in that 7, among the step S2-1, soak with organic solvent, soak time is 5 minutes-40 minutes.
According to the method for claim 7, it is characterized in that 8, among the step S2-1, soak with organic solvent, preferred soak time is 20 ± 5 minutes.
According to the method for claim 3, it is characterized in that 9, among the step S2-2, be immersed among the NMP (positive N-methyl-2-2-pyrrolidone N-), the temperature of immersion is at normal temperatures.
According to the method for claim 3, it is characterized in that 10,, among the step S2-2, be immersed among the NMP that the time of immersion is 5 minutes to 10 minutes.
11, according to the method for claim 3, it is characterized in that, use deionized water rinsing among the step S2-3, the time of flushing is 5 minutes to 10 minutes.
12, according to the method for claim 3, it is characterized in that, among the step S2-4, use the isopropyl alcohol drying, dry 5～10 minutes at normal temperatures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100530767A CN100347836C (en) | 2004-07-22 | 2004-07-22 | Method for removing lattice defect in pad area of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100530767A CN100347836C (en) | 2004-07-22 | 2004-07-22 | Method for removing lattice defect in pad area of semiconductor device |
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| Publication Number | Publication Date |
|---|---|
| CN1725458A true CN1725458A (en) | 2006-01-25 |
| CN100347836C CN100347836C (en) | 2007-11-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2004100530767A Expired - Fee Related CN100347836C (en) | 2004-07-22 | 2004-07-22 | Method for removing lattice defect in pad area of semiconductor device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044407B (en) * | 2009-10-20 | 2012-04-18 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of chip |
| CN102569023A (en) * | 2010-12-30 | 2012-07-11 | 安集微电子（上海）有限公司 | Cleaning method for reducing metal corrosion |
| CN105551942A (en) * | 2016-01-14 | 2016-05-04 | 成都海威华芯科技有限公司 | Method for cleaning etched deep hole of semiconductor wafer |
| CN105762086A (en) * | 2014-12-16 | 2016-07-13 | 中芯国际集成电路制造(上海)有限公司 | Bonding pad structure manufacturing method, bonding structure manufacturing method, and bonding structure |
| CN107946178A (en) * | 2017-11-22 | 2018-04-20 | 奕铭（大连）科技发展有限公司 | A kind of cleaning method of semiconductor chip |
| CN112951863A (en) * | 2021-03-30 | 2021-06-11 | 上海华力微电子有限公司 | Method for manufacturing image sensor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010020454A (en) * | 1997-05-23 | 2001-03-15 | 샘미 케이. 브라운 | A system and method for packaging integrated circuits |
| US20030196681A1 (en) * | 2002-04-23 | 2003-10-23 | Ching-Ping Wu | Eliminating residual polymer in the cleaning process of post pad etching |
-
2004
- 2004-07-22 CN CNB2004100530767A patent/CN100347836C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044407B (en) * | 2009-10-20 | 2012-04-18 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of chip |
| CN102569023A (en) * | 2010-12-30 | 2012-07-11 | 安集微电子（上海）有限公司 | Cleaning method for reducing metal corrosion |
| CN102569023B (en) * | 2010-12-30 | 2016-09-14 | 安集微电子（上海）有限公司 | A kind of cleaning method reducing metal erosion |
| CN105762086A (en) * | 2014-12-16 | 2016-07-13 | 中芯国际集成电路制造(上海)有限公司 | Bonding pad structure manufacturing method, bonding structure manufacturing method, and bonding structure |
| CN105551942A (en) * | 2016-01-14 | 2016-05-04 | 成都海威华芯科技有限公司 | Method for cleaning etched deep hole of semiconductor wafer |
| CN107946178A (en) * | 2017-11-22 | 2018-04-20 | 奕铭（大连）科技发展有限公司 | A kind of cleaning method of semiconductor chip |
| CN112951863A (en) * | 2021-03-30 | 2021-06-11 | 上海华力微电子有限公司 | Method for manufacturing image sensor |
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| Publication number | Publication date |
|---|---|
| CN100347836C (en) | 2007-11-07 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111130 |
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Effective date of registration: 20111130 Address after: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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