CN1719626A - Cu-Ga alloy target for Cu-In-Ga-Se film solar battery and preparing process thereof - Google Patents
Cu-Ga alloy target for Cu-In-Ga-Se film solar battery and preparing process thereof Download PDFInfo
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- CN1719626A CN1719626A CNA2005100118593A CN200510011859A CN1719626A CN 1719626 A CN1719626 A CN 1719626A CN A2005100118593 A CNA2005100118593 A CN A2005100118593A CN 200510011859 A CN200510011859 A CN 200510011859A CN 1719626 A CN1719626 A CN 1719626A
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- 229910000807 Ga alloy Inorganic materials 0.000 title claims description 22
- 238000000034 method Methods 0.000 title claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 31
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 22
- 239000000956 alloy Substances 0.000 claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 claims abstract description 22
- 239000013077 target material Substances 0.000 claims abstract description 16
- 238000002360 preparation method Methods 0.000 claims abstract description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 27
- 239000010949 copper Substances 0.000 claims description 22
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 13
- 238000000465 moulding Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000011669 selenium Substances 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 229910052711 selenium Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000003350 kerosene Substances 0.000 claims description 3
- 239000012809 cooling fluid Substances 0.000 claims description 2
- 239000000110 cooling liquid Substances 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 239000003595 mist Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 16
- 239000002184 metal Substances 0.000 abstract description 16
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 11
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000010792 warming Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 3
- 238000005242 forging Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000928 Yellow copper Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
This invention relates to a CuGa alloy target used in CuInGaSe film solar energy cell and its preparation method, which mixes single metals of Cu and Ga to be melted under the gas protection or in vacuum then to be cast and quenched to formation. The formed alloy sputter target material includes: Ga: 25%-67% of the atomic percentage content having the character of fineness and high stability.
Description
Technical field
The present invention relates to opto-electronics and semiconductor industry required metal sputtering target and preparation thereof, particularly be used to prepare the copper gallium alloy target of copper-indium-galliun-selenium film solar cell absorbed layer.
Background technology
Compound semiconductor copper indium diselenide (CuInSe with yellow copper structure
2, be called for short CIS) or mix Copper Indium Gallium Selenide (Cu (In, Ga) Se that gallium forms
2Abbreviation CIGS) miscible crystal is the direct band gap material, with its thin-film solar cells as light absorbing zone, be considered to one of third generation compound photovoltaic cell of tool development prospect, not only have low cost of manufacture, high electricity conversion, and have capability of resistance to radiation strong, outstanding advantage such as stable performance.Its structure of Copper Indium Gallium Selenide (CIGS) thin-film solar cells is generally: and antireflection layer/metal gate-shaped electrode/transparent electrode layer/Window layer/transition zone/light absorbing zone (CIGS, CIS)/metal back electrode/substrate.Produce solar cell for large tracts of land, the preparation method of CIGS film mainly contains polynary method and the selenizing method of steaming altogether.The selenizing method is first deposited copper indium gallium on substrate (Cu-In-Ga is called for short a CIG) alloy performed thin film, and selenizing forms the GIGS film in Se atmosphere then.The film build method of CIG film has a lot, and wherein magnetically controlled sputter method technology is easy, elemental composition is easy to control, is effectively industrialization film build method.
Studies show that CIGS absorbed layer film performance is very responsive to the composition of CIG performed thin film and structure, the performance of follow-up CIGS thin-film solar cells is played key effect.Magnetron sputtering C IG prefabricated membrane because In and Ga are low-melting-point metal, can't directly prepare stabilized uniform CIG alloy target material under the normal temperature, so adopt Cu-In and Cu-Ga alloy target material sputtering sedimentation simultaneously.Regulate and accurately control the composition ratio of each element in the CIG prefabricated membrane for convenience, and obtain to contain the higher film of Ga amount, target just requires to adopt the Cu-Ga alloy of high Ga content.As can be known under the equilibrium state, the highest gallium content of Cu-Ga solid solution phase has only 35%, surpasses this Ga content, can produce low melting point Cu-Ga phase, and phenomenon of phase separation is serious, easily separates out Ga according to phasor.The Cu-Ga alloy is a fragile material in addition, is not suitable for impact processing such as forging.
Present achievement in research in the many alloying elements combination of mixing as target in the Chinese patent application 01104414.4, there is no Cu-Ga, and its doped chemical is not higher than 10%, in the time of can't satisfying follow-up sputter to elemental composition than the requirement of control comprehensively.For making the alloy target material composition even, crystal grain is tiny, has also adopted many methods.After first vacuum melting is adopted in above-mentioned patent application, high temperature forging again.Adopt in the patent documentation 00817269.1 the processing speed plastic working of material with at least 100%/second; Adopt gas jet powder to make the method for sputtered aluminium alloy target material in the Chinese patent application 01134646.9, will provide the raw metal of making sputtered aluminium alloy target material to be melt into a molten metal earlier; With the gas blowout method this molten metal is made metal dust then, with hot forming this metal dust is made a sputtered aluminium alloy target material at last.The said method relative complex, actual implementing relatively expended operation and time, and the Cu-Ga alloy is more crisp, is not suitable for plastic workings such as forging and pressing, and therefore existing method all can't realize the acquisition of the high gallium content of alloy target material.
Summary of the invention
The purpose of this invention is to provide copper gallium alloy target of a kind of copper-indium-galliun-selenium film solar cell and preparation method thereof, be used to cooperate the magnetron sputtering preparation process of CuInGaSe absorbed layer performed thin film, solve the raising and accurate control problem of gallium content in the copper indium gallium performed thin film.Make the target that obtains have fine-grain and high homogenize, characteristics that low-melting-point metal Ga content is high, to meet the requirement of the required metal sputtering technology of opto-electronics and semiconductor industry.
Technical scheme of the present invention is as follows:
A kind of copper gallium alloy target that is used for copper-indium-galliun-selenium film solar cell, it is characterized in that: the atom percentage content of gallium and copper is respectively 25%～67% and 75%～33% in the target, and its crystal grain is less than 30 microns.
The invention provides a kind of method for preparing copper gallium alloy target, it is characterized in that this method carries out according to the following steps:
1) melting: simple substance gallium and elemental copper are respectively 25%～67% and 75%～33% mixing by atom percentage content, under Buchholz protection or in the vacuum under the state, earlier at the uniform velocity be warmed up to 800～1100 ℃, programming rate is 10～50 ℃/min, be incubated 30～90min then, form the copper gallium alloy liquid that mixes; Directly alloy liquid is poured in the composite type target mould; Described gas is inert gas, nitrogen, hydrogen or their mist;
2) chilling moulding: under described Buchholz protection or in the vacuum, mold bottom passes to circulation fluid cooling or mould is put on the platform by cooling fluid, makes it the chilling moulding; Described circulating cooling liquid is kerosene, water or liquid nitrogen, makes cooling rate at 60～110 ℃/min:
3) demoulding: after treating that alloy target material is cooled to 15～30 ℃, take out target, pull down mould, promptly make described copper gallium alloy target.
In the said method, elemental copper adopts copper rod or copper billet in the step 1), places crucible bottom earlier, will pour in the crucible after the simple substance gallium heat fused, so that the two even mixing again.
The pressure of protective gas of the present invention is 1～10 standard atmospheric pressure; Described vacuum is below the 10Pa.
The invention provides copper gallium (Cu-Ga) alloy target material that is adopted for preparation magnetron sputtering C IG alloy performed thin film and preparation method thereof, prepared target have fine-grain and high homogenize, characteristics that low-melting-point metal Ga content is high, the atom percentage content that can reach gallium and copper is respectively 67% and 33%, meets the requirement of the required metal sputtering technology of opto-electronics and semiconductor industry.Because adopting, the present invention need not to make the Composition Control of target simply and accurately to realize through the direct mixing match of pretreated simple metal; Adopt melting and cast under vacuum or the Buchholz protection, the protection metal prevents oxidation etc., has reduced material loss, has reduced cost; The present invention is by easy quick cooling, chilling moulding, obtained miniaturization and the high high gallium content copper alloy target that homogenizes, and avoided loaded down with trivial details operation, for the preparation of follow-up magnetron sputtering copper indium gallium alloy performed thin film provides convenient and stable condition.Therefore, it is easy that the present invention has technology, the efficient height, and cost is low, advantages such as good stability.
Embodiment
Embodiment 1:
Be respectively 25% and 75% ratio in simple substance gallium and elemental copper atom percentage content, earlier the bar of fine copper Φ 10 be cut into the segment of 10mm, place the bottom of melting kettle, will pour crucible into after the gallium simple substance heat fused again.In the following vacuum of 10Pa, carry out melting, be warming up to 800 ℃ with 10 ℃/min earlier, be incubated 90min then.In a vacuum, directly open the central opening of crucible bottom, alloy is poured rapidly in the composite type target mould.Mold bottom makes it the speed chilling moulding with 60 ℃/min with kerosene circulation cooling.After treating that alloy target material is cooled to room temperature, take out target and mould, dismounting bed die, the atom percentage content that promptly makes gallium and copper are respectively that 25% and 75% composition is even, the copper gallium alloy target of grain refinement.
Embodiment 2:
Be respectively 35% and 65% ratio in simple substance gallium and elemental copper atom percentage content, earlier the bar of fine copper Φ 10 be cut into the segment of 10mm, place crucible bottom, will pour crucible into after the gallium simple substance heat fused.Under the argon shield of 1 standard atmospheric pressure, carry out melting, be warming up to 850 ℃ with 20 ℃/min earlier, be incubated 70min then.Under argon shield, directly open the central opening of crucible bottom, alloy is poured rapidly in the composite type target mould.Mold bottom cools off with boiler water circulation, makes it the speed chilling moulding with 70 ℃/min.After treating that alloy target material is cooled to room temperature, take out target and mould, dismounting bed die, the atom percentage content that promptly makes gallium and copper are respectively that 35% and 65% composition is even, the copper gallium alloy target of grain refinement.
Embodiment 3:
Be respectively 40% and 60% ratio in simple substance gallium and elemental copper atom percentage content, earlier the bar of fine copper Φ 10 be cut into the segment of 10mm, place crucible bottom, will pour crucible after the gallium simple substance heat fused into and mix.Under the nitrogen protection of 3 standard atmospheric pressures, carry out melting, be warming up to 900 ℃ with 30 ℃/min earlier, be incubated 60min then.Under nitrogen protection, directly open the central opening of crucible bottom, alloy is poured rapidly in the composite type target mould.Mold bottom cools off with boiler water circulation, makes it the speed chilling moulding with 80 ℃/min.After treating that alloy target material is cooled to room temperature, take out target and mould, dismounting bed die, the atom percentage content that promptly makes gallium and copper are respectively that 40% and 60% composition is even, the copper gallium alloy target of grain refinement.
Embodiment 4:
Be respectively 50% and 50% ratio in simple substance gallium and elemental copper atom percentage content, earlier the fine copper plate be cut into the fritter of 10mm * 10mm * 10mm, place crucible bottom, will pour crucible after the gallium simple substance heat fused into and mix.Under the hydrogen shield of 5 standard atmospheric pressures, carry out melting.Earlier be warming up to 1000 ℃, be incubated 50min then with 40 ℃/min.Under hydrogen shield, directly open the central opening of crucible bottom, alloy is poured rapidly in the composite type target mould.Mold bottom cools off with boiler water circulation, makes it the speed chilling moulding with 90 ℃/min.After treating that alloy target material is cooled to room temperature, take out target and mould, dismounting bed die, the atom percentage content that promptly makes gallium and copper are respectively that 50% and 50% composition is even, the copper gallium alloy target of grain refinement.
Embodiment 5:
Be respectively 67% and 33% ratio in simple substance gallium and elemental copper atom percentage content, earlier the fine copper plate be cut into the fritter of 10mm * 10mm * 10mm, place crucible bottom earlier, will pour crucible after the gallium simple substance heat fused into and mix.Carry out melting under argon gas and hydrogen gas mixture protection, two kinds of partial pressures are respectively 4,6 standard atmospheric pressures.Earlier be warming up to 1100 ℃, be incubated 30min then with 50 ℃/min.At the mixed gas protected central opening of directly opening crucible bottom down, alloy is poured in the composite type target mould rapidly.Mold bottom makes it the speed chilling moulding with 110 ℃/min with cooled with liquid nitrogen.After treating that alloy target material is cooled to room temperature, take out target and mould, dismounting bed die, the atom percentage content that promptly makes gallium and copper are respectively that 67% and 33% composition is even, the copper gallium alloy target of grain refinement.
Claims (4)
1. copper gallium alloy target that is used for copper-indium-galliun-selenium film solar cell, it is characterized in that: the atom percentage content of gallium and copper is respectively 25%～67% and 75%～33% in the target, and its crystal grain is less than 30 microns.
2. method for preparing copper gallium alloy target as claimed in claim 1 is characterized in that this method carries out according to the following steps:
1) melting: simple substance gallium and elemental copper are respectively 25%～67% and 75%～33% mixing by atom percentage content, under Buchholz protection or vacuum state, earlier at the uniform velocity be warmed up to 800～1100 ℃, programming rate is 10～50 ℃/min, be incubated 30～90min then, form the copper gallium alloy liquid that mixes; Directly alloy liquid is poured in the composite type target mould; Described gas is inert gas, nitrogen, hydrogen or their mist;
2) chilling moulding: under described Buchholz protection or in the vacuum, mold bottom passes to circulation fluid cooling or mould is put on the platform by cooling fluid, makes it the chilling moulding; Described circulating cooling liquid is kerosene, water or liquid nitrogen, and cooling rate is 60～110 ℃/min;
3) demoulding: after treating that alloy target material is cooled to 15～30 ℃, take out target, pull down mould, promptly make described copper gallium alloy target.
3. according to the described preparation method of claim 2, it is characterized in that: in the described step 1), elemental copper adopts copper rod or copper billet, places crucible bottom earlier, will pour in the crucible of melting after the simple substance gallium heat fused again.
4. according to claim 2 or 3 described preparation methods, it is characterized in that: in whole melting, cast and the forming process, used gas pressure is 1～10 standard atmospheric pressure; Described vacuum is below the 10Pa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100118593A CN100418235C (en) | 2005-06-03 | 2005-06-03 | Cu-Ga alloy target for Cu-In-Ga-Se film solar battery and preparing process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100118593A CN100418235C (en) | 2005-06-03 | 2005-06-03 | Cu-Ga alloy target for Cu-In-Ga-Se film solar battery and preparing process thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1719626A true CN1719626A (en) | 2006-01-11 |
| CN100418235C CN100418235C (en) | 2008-09-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005100118593A Expired - Fee Related CN100418235C (en) | 2005-06-03 | 2005-06-03 | Cu-Ga alloy target for Cu-In-Ga-Se film solar battery and preparing process thereof |
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| CN (1) | CN100418235C (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2182083A1 (en) * | 2008-11-04 | 2010-05-05 | Solar Applied Materials Technology Corp. | Copper-gallium alloy sputtering target, method for fabricating the same and related applications |
| CN102031398A (en) * | 2010-11-25 | 2011-04-27 | 广东先导稀有材料股份有限公司 | Method for preparing copper indium alloy |
| CN102046836A (en) * | 2009-07-27 | 2011-05-04 | Jx日矿日石金属株式会社 | Sintered Cu-Ga sputtering target and method for producing the target |
| CN102214735A (en) * | 2011-06-11 | 2011-10-12 | 蚌埠玻璃工业设计研究院 | Method for preparing absorbed layer of CIGS (copper indium gallium selenide)/sulfur solar cell |
| CN102286724A (en) * | 2011-09-01 | 2011-12-21 | 基迈克材料科技（苏州）有限公司 | Copper and gallium alloy rotating target for photovoltaic absorption layer sputtering film coating and preparation method |
| CN102430718A (en) * | 2011-12-26 | 2012-05-02 | 昆山全亚冠环保科技有限公司 | Mould for preparing aluminum and aluminum alloy rotary target and manufacturing method thereof |
| CN101736289B (en) * | 2008-11-04 | 2012-06-27 | 光洋应用材料科技股份有限公司 | Copper alloy target, manufacturing method thereof and film and solar cell manufactured by same |
| CN102751387A (en) * | 2012-07-18 | 2012-10-24 | 深圳大学 | Preparation method of Cu (In, ga) Se2thin film for absorption layer of thin film solar cell |
| CN103225066A (en) * | 2012-12-28 | 2013-07-31 | 中国神华能源股份有限公司 | Copper-gallium alloy target material for sputtering and preparation method thereof |
| WO2013170734A1 (en) * | 2012-05-17 | 2013-11-21 | 广东先导稀材股份有限公司 | Preparation method for copper-gallium alloy |
| WO2013170716A1 (en) * | 2012-05-17 | 2013-11-21 | 广东先导稀材股份有限公司 | Preparation method for copper-indium alloy |
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| CN108893596A (en) * | 2018-07-04 | 2018-11-27 | 汉能新材料科技有限公司 | A kind of efficient recycling method of copper indium gallium selenide waste material |
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| CN102214735A (en) * | 2011-06-11 | 2011-10-12 | 蚌埠玻璃工业设计研究院 | Method for preparing absorbed layer of CIGS (copper indium gallium selenide)/sulfur solar cell |
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| CN103421974B (en) * | 2012-05-17 | 2015-11-25 | 广东先导稀材股份有限公司 | The preparation method of copper indium gallium alloy |
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| CN102751387B (en) * | 2012-07-18 | 2016-01-06 | 深圳大学 | Preparation method of Cu (In, ga) Se2thin film for absorption layer of thin film solar cell |
| JP2014051712A (en) * | 2012-09-07 | 2014-03-20 | Ulvac Japan Ltd | Cu-Ga-BASED ALLOY TARGET AND METHOD FOR PRODUCING THE SAME |
| CN103225066B (en) * | 2012-12-28 | 2015-04-29 | 中国神华能源股份有限公司 | Copper-gallium alloy target material for sputtering and preparation method thereof |
| CN103225066A (en) * | 2012-12-28 | 2013-07-31 | 中国神华能源股份有限公司 | Copper-gallium alloy target material for sputtering and preparation method thereof |
| WO2015042622A1 (en) | 2013-09-27 | 2015-04-02 | Plansee Se | Copper-gallium sputtering target |
| US10202681B2 (en) | 2013-09-27 | 2019-02-12 | Plansee Se | Copper-gallium sputtering target |
| CN108893596A (en) * | 2018-07-04 | 2018-11-27 | 汉能新材料科技有限公司 | A kind of efficient recycling method of copper indium gallium selenide waste material |
| RU2824968C2 (en) * | 2023-01-11 | 2024-08-19 | Федеральное государственное бюджетное учреждение науки Дагестанский федеральный исследовательский центр Российской академии наук | Method of producing intermetallic target of cu-ga used to obtain thin film by magnetron sputtering |
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