CN1719269A - Insulator charged detection instrument and its implement method - Google Patents
Insulator charged detection instrument and its implement method Download PDFInfo
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- CN1719269A CN1719269A CN 200510063334 CN200510063334A CN1719269A CN 1719269 A CN1719269 A CN 1719269A CN 200510063334 CN200510063334 CN 200510063334 CN 200510063334 A CN200510063334 A CN 200510063334A CN 1719269 A CN1719269 A CN 1719269A
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Abstract
The present invention relates to an insulator detecting instrument. It includes electric field measuring probe and circuit portion. Said circuit portion includes the following components: amplifier, rectifier, voltage frequency converter, location circuit and microprocessor, etc. Said invention also provides its working priciple, and its detection method and steps.
Description
Technical field
The present invention relates to a kind of insulator charged detection instrument and implementation method thereof, belong to the pick-up unit and the detection method of electric system high voltage equipment insulation.
Background technology
At present, detect the composite insulator on the high-tension line, some areas have brought into use the charged detector of electric field method principle to replace the original range estimation and the method for infrared thermoviewer, this method can detect the inner defective of hiding of insulator, and environmental requirement is very low to external world, and it is cheap a lot of that the relative infrared thermoviewer of cost is also wanted.Electric field method detects composite insulator, is to judge its internal fault situation according to the distribution of composite insulator surface longitudinal electric field.Fig. 1 has provided a simplified model, when applying voltage, exist electric field around the insulator 1A, this electric field can resolve into along insulator vertically (direction that parallels with low-field electrode 11A line with high-field electrode 11B) component and along the insulator component of (with the perpendicular direction of high-low pressure electrode connecting line) radially, wherein longitudinal electric field is used to detect composite insulator; Curve A is that the longitudinal electric field intensity that calculates according to Theory of Electromagnetic Field is along the axial change curve of insulator among Fig. 1.This curve is smooth under the normal condition, show " U " shape, when existing conductive defect 2A, insulator (sees stain among the figure), current potential herein becomes a constant, because electric field intensity is the rate of change of current potential along length, therefore longitudinal electric field intensity herein will reduce suddenly, the Electric Field Distribution curve of making is also no longer smooth, but distortion (middle sinking rises on the two ends) is arranged on corresponding position, see curve B among Fig. 1; This shows, distribute, can find out the interior insulation conduction fault of composite insulator by the longitudinal electric field of measuring composite insulator.
Though the technology of the charged detection composite insulator of electric field method has had significant progress, and weak point is still arranged.At first, in the existing detection technique, judge that the residing position of detector all is the position by full skirt, mode by reflection or correlation, every through data point of a slice full skirt measurement, then all data points are coupled together, form the curve of an electric field, determine the fault that whether has of insulator again according to the shape of curve; But generally more than 4cm, every through data point of a slice full skirt measurement, the curve that then is linked to be data has the above interval of 4cm to the spacing of full skirt on the composite insulator.Because data point is very few, the curve that is linked to be can not truly reflect the distribution situation of electric field like this.Therefore, the precision of detection and full skirt spacing have direct relation; The full skirt spacing is big more, and the precision of detection is more little, is not easy to realize small defective more.In the prior art, detection and location all are to rely on full skirt, do not increase the technical method of measurement point between two full skirts.In addition, two pole plate positions measuring electric field all are the both sides that are placed on the detector shielding construction, and what measure like this is the mean value of two pole plate position electric fields.Because the detector shielding construction has certain thickness (generally more than 2cm), and shielding construction itself so the sensitivity of detector is affected, can not detect the long defective of high-pressure side 5cm to electric field generation distortion effect.The minimum length that existing detector is measured high-pressure side conductive defect fault is 7cm, and the part of many on-the-spot insulator generation brittle failure accidents is at the root of high-pressure side gold utensil, it is a certain position between the gold utensil and first full skirt, therefore, the testing staff wishes to have higher sensitivity, can detect length is 5cm even littler high-pressure side conductive defect, so just can be in high-pressure side first full skirt with minimum drawbacks limit, avoid defective further to low pressure end development, the incidence of greatly minimizing accident.
Summary of the invention:
The objective of the invention is, a kind of insulator charged detection instrument and implementation method thereof are provided,, can detect 5cm that insulator has at high-pressure side even more small defective in order to improve to use the sensitivity of electric field method live line measurement insulator.
Technical scheme of the present invention is: insulator charged detection instrument comprises support, electric field measurement probe and circuit part; Described circuit part is provided with the amplifier that links with electric field probe, and its output terminal and rectifier link, and rectifier links the microprocessor connected storage by voltage to frequency converter with microprocessor; Circuit part also comprises a positioning circuit that connects with microprocessor; Described positioning circuit comprises the photovoltaic array of being made up of a plurality of photoelectric tubes, each photoelectric tube sends position signalling through the insulator full skirt and gives the detector microprocessor, make the measuring position of detector can be near a certain full skirt, also can be between two full skirts; Described electric field measurement probe is made up of two pole plates, and two pole plates all are arranged on shielding box near high voltage end one side.
The implementation method of insulator charged detection instrument the steps include:
(1), electric field measurement probe induction insulator surrounding space electric field through amplifier, rectifier, voltage to frequency converter, is transformed into the square-wave signal of frequency with electric field change with electric field signal, receives and add up this signal by microprocessor;
(2), positioning circuit is surveyed the insulator locus and is produced the position signalling of insulator, and this signal is sent into microprocessor as trigger pip; Microprocessor deposits detected electric field signal in storer after obtaining trigger pip;
(3), the surface of detector along insulator slipped over, the photovoltaic array on the detector sends signal and gives microprocessor, and microprocessor is just measured one group of electric field data automatically; When detector slips over to the other end from insulator one end, when each photoelectric tube in the photovoltaic array passes through a slice full skirt, positioning circuit all can be sent out a signal and give microprocessor, detector is received the Electric Field Numerical that the position was just sequentially measured and write down to trigger pip, by computing machine these data are linked to be curve, just can judge the defect condition of insulator by the shape of curve, find the conductive defect of insulator high-pressure side.
The invention has the advantages that: owing to use two pole plates that are arranged on close high voltage end one side of shielding box to measure, and the method for application multimetering, can measure near the truth of the electric field of insulator effectively, the electric field data that measure are many more, just can detect small more defective, improved the precision of measuring, can detect high-pressure side 5cm even more small defective, this moment, defective was further limited within first full skirt of high-pressure side.
Description of drawings
Fig. 1 detects principle schematic for electric field method
Fig. 2 is a circuit structure block diagram of the present invention
Fig. 3 is the photovoltaic array instrumentation plan
Fig. 4 a, 4b, 4c, 4d are the graph of measured results of high-pressure side disordered insulator different mining number of samples
Embodiment
As shown in Figure 2, insulator 1 charged detector is made up of support 2, electric field measurement probe 3 and circuit part 4.When composite insulator contains when containing zero resistance insulator in conductive defect or the porcelain insulator string, the electric field around it will distort, and the standard electric field distribution by with zero defect the time compares, and just can reach testing goal.Electric field measurement probe 3 induction insulators 1 surrounding space electric field through amplifier 5, rectifier 6, voltage to frequency converter 7, is transformed into the square-wave signal of frequency with electric field change with electric field signal, receives and add up this signal by microprocessor 8; Circuit part also comprises positioning circuit 9, and it is surveyed insulator 1 locus and produces the position signalling of insulator 1 and send into microprocessor 8; Microprocessor 8 deposits detected electric field signal in storer 10.Electric field measurement probe 3 is made up of two pole plates 11, in order to avoid the influence of high-voltage signal to circuit, all circuit structures is placed in the shielding box 12; The pole plate 11 of measuring sonde 3 and the positional structure of shielding box 12 are that two measuring pads 11 all are placed on the side of shielding box 12 near the high voltage direction; Electric field measurement probe 3 Electric Field Numerical that measure, be two measuring pads 11 mean values of present position electric field separately, and shielding box 12 all has certain thickness (being not less than 2cm), so when measuring pad 11 was placed on shielding box 12 both sides, the electric field data that measure were actually the Electric Field Numerical in two pole plate 11 centre positions; Two pole plates 11 of electric field measurement probe 3 are placed into shielding box 12 near high-pressure side one side, the electric field data that measure like this are exactly the Electric Field Numerical of shielding box 12 near high-pressure side one side, the former method of comparing is more near high-pressure side, and eliminated the influence of shielding construction, therefore can detect the littler conduction fault of high-pressure side, thus the sensitivity that has improved detector.
As shown in Figure 3, detector positioning circuit 9 is provided with a plurality of photoelectric tubes and forms photovoltaic array 13, when detector slides on insulator 1 surface, during each photoelectric tube process insulator full skirt 14, reflected light causes that photovoltaic array 13 sends signal and gives detector microprocessor 8, make the Electric Field Numerical of microprocessor 8 record current locations, all can write down one group of electric field data during each each sheet insulator full skirt 14 of photoelectric tube process, detector just can obtain a plurality of trigger pips like this, promptly measure a series of electric field data, obtain the curve that insulator 1 surface field distributes by computing machine; Its measuring position can be near a certain full skirt 14, also can be between two full skirts 14, the method that increases measure dot number between per two insulator full skirts 14 is, be provided with the triggering measurement structure of photovoltaic array 13 can be between per two full skirts 14 the electric field data of a plurality of positions of proceeding measurement, thereby improved the precision of measuring.If the photoelectric tube number of photovoltaic array 13 has only one, can only measure Electric Field Numerical at every full skirt 14 places so, the electric field distortion less than the full skirt spacing just can not be detected between two full skirts 14 like this.If the number of photoelectric tube is increased to two, so just can between per two full skirts 14, increase a measurement point, make measure dot number 2 times before being increased to, thus when the electric field curve that measures ratio has only a photoelectric tube more near truth.Equally, if the number of photoelectric tube is increased to three, just can increase by two measurement points between two full skirts 14, the electric field curve that measures can approach truth more.So the scheme that increases measure dot number has improved the sensitivity that detects.
Be illustrated in figure 4 as the measurement result of high-pressure side 5cm disordered insulator different mining number of samples, measure between promptly per two full skirts 14 1 time, 2 times or the repeatedly curve that obtains of electric field data and the comparative result of actual insulation 1 surface field curve distribution; Fig. 4 a shows the electric-field intensity distribution curve when per two full skirts detect a time; Fig. 4 b shows the electric-field intensity distribution curve that per two full skirts detect at twice o'clock; Fig. 4 c shows the electric-field intensity distribution curve when per two full skirts detect three times; Fig. 4 d shows actual electrical field strength distribution curve; This shows, want to find the conductive defect of insulator 1 high-pressure side 5cm, the data of measuring between per two full skirts 14 can not be less than twice.If the distance between the insulator full skirt 14 is longer, the number of times of measurement data also will increase between then per two full skirts 14.The method that changes the position of measuring pad 11 is, the position of measuring two pole plates 11 of electric field is placed into the homonymy (near a side of high-pressure side) of detector, the existence of detector will make near the electric field the insulator 1 distort, because detector inside is electronic circuit, the interference of shielding construction with the reduction high-tension apparatus must be arranged, and this metallic shield structure reduces the sensitivity of detector to the distortion effect meeting of electric field.With 11 choice of location of pole plate a side at the detector shielding construction, can reduce the influence of shielding construction significantly, detector sensitivity is increased.
Claims (2)
1, a kind of insulator charged detection instrument comprises support, electric field measurement probe and circuit part, it is characterized in that:
Described circuit part is provided with the amplifier (5) that links with electric field probe (3), and its output terminal and rectifier (6) link, and rectifier (6) links microprocessor (8) connected storage (10) by voltage to frequency converter (7) with microprocessor (8); Circuit part also comprises a positioning circuit (9) that connects with microprocessor (8);
Described positioning circuit (9) comprises the photovoltaic array of being made up of a plurality of photoelectric tubes (13), each photoelectric tube sends position signalling through insulator full skirt (14) and gives detector microprocessor (8), make the measuring position of detector can be near a certain full skirt (14), also can be between two full skirts (14);
Described electric field measurement probe (3) is made up of two pole plates (11), and two pole plates (11) all are arranged on the side of shielding box (12) near high voltage end.
2, a kind of charged detection method of insulator the steps include:
A, electric field measurement probe (3) induction insulator (1) surrounding space electric field, with electric field signal process amplifier (5), rectifier (6), voltage to frequency converter (7), be transformed into the square-wave signal of frequency, receive and add up this signal by microprocessor (8) with electric field change;
B, positioning circuit (9) are surveyed insulator (1) locus and are produced the position signalling of insulator (1), and this signal is sent into microprocessor (8) as trigger pip; Microprocessor (8) deposits detected electric field signal in storer (10) after obtaining trigger pip;
C, the surface of detector along insulator (1) slipped over, the photovoltaic array on the detector (13) sends signal and gives microprocessor (8), and microprocessor (8) is just measured one group of electric field data automatically; When detector slips over to the other end from insulator (1) one end, when each photoelectric tube in the photovoltaic array (13) passes through a slice full skirt (14), positioning circuit (9) all can be sent out a signal and give microprocessor (8), detector is received the Electric Field Numerical that the position was just sequentially measured and write down to trigger pip, by computing machine these data are linked to be curve, just can judge the defect condition of insulator (1) by the shape of curve, find the conductive defect of insulator (1) high-pressure side.
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