CN1716556A - 提高集成电路内引线键合可靠性的方法 - Google Patents

提高集成电路内引线键合可靠性的方法 Download PDF

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CN1716556A
CN1716556A CNA2005100030898A CN200510003089A CN1716556A CN 1716556 A CN1716556 A CN 1716556A CN A2005100030898 A CNA2005100030898 A CN A2005100030898A CN 200510003089 A CN200510003089 A CN 200510003089A CN 1716556 A CN1716556 A CN 1716556A
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integrated circuit
wire bonding
leading wire
lead
bonding reliability
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卢生贵
高福
周恒�
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WIND PHOTOELECTRIC FACTORY CHINA ZHENHUA GROUP
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WIND PHOTOELECTRIC FACTORY CHINA ZHENHUA GROUP
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Priority to CNA2005100030898A priority Critical patent/CN1716556A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

一种提高集成电路内引线键合可靠性的方法，其技术方案是在装结芯片和压焊前，增加电镀工序，所述电镀工序为用砂磨的方法除去内引线柱端面原有金属层，然后电镀镍，仅电镀集成电路基座的内引线柱部分。整个器件封装过程除增加电镀工序外，其它工序不变。本发明避免了Au－Al键合系统的缺陷，能使各种内引线柱在较佳的镀镍条件下生成较佳的镍镀层，通过与压焊丝压焊形成Ni－Al键合系统。本发明具有成本低廉，操作方便，内引线键合强度和键合强度稳定性好的特点。

Description

提高集成电路内引线键合可靠性的方法
技术领域
本发明涉及半导体集成电路封装，具体地说涉及半导体集成电路封装时内引线的键合。
背景技术
集成电路封装时，有一道金属丝键合工序，它是指用铝硅合金丝或其它金属丝以压焊的方式连接器件中的芯片和器件基座的内引线柱，键合强度及键合强度的稳定性是该工序的重要指标。为了提高键合强度和键合强度的稳定性，人们提出了不少方案，如中国专利00101997.X“引线框架及其电镀方法”公开一种半导体封装的引线框架及其制造方法。中国专利97114610.1“半导体器件及其制造方法”公开一种具有镍、钯和金的层叠镀层的引线框架及其制造方法。上述两种方案生产成本较高，工艺复杂，而且不能根本解决Au-Al键合的缺陷问题。
较常用的压焊丝是铝硅合金丝，它与金接触通过压力和超声波键合，形成合金层，若键合工艺不恰当，可能引起合金层产生裂纹甚至脱落，另外Au-Al键合系统经高温长期存放后，会出现“紫斑”、“白斑”，这些都是可能引起键合失效。现有的情况是各半导体器件厂生产的基座，整个基座多数是镀金的，也有镀镍的，也有镀其它金属的，现有的生产工艺是在封装厂，不论基座的内引线柱表面的金属层是什么金属层用压焊丝直接压焊。这样的工艺办法虽然成本低、操作简单方便，但是由于内引线柱表面的金属层种类不同、镀层的厚度不同等条件差异与压焊丝压焊后产品的键合强度及键合稳定性不完全相同，使得最终封装产品质量不相同，从而产品质量不稳定。
发明内容
本发明克服了现有技术中的缺点，提供了一种提高集成电路内引线键合的可靠性的方法。
本发明的技术方案是在装结芯片和压焊前，增加电镀工序，所述电镀工序为除去内引线柱端面原有金属层，然后电镀镍，仅电镀集成电路基座的内引线柱部份。整个器件封装过程除增加电镀工序外，其余工序不变。
与现有技术相比，本发明的有益效果是避免了Au-Al键合系统的缺陷，能使各种内引线柱在较佳的镀镍条件下生成较佳的镍镀层，通过与压焊丝压焊形成Ni-Al键合系统，本发明具有成本低廉，操作方便，内引线键合强度和键合强度稳定性好的特点。
附图说明
图1为本发明给出的实施例的半导体器件主视图
图2为本发明给出的实施例的半导体器件俯视图
各图中1为内引线柱、2为基座金属壳、3为外引线、4为引线标记、5为绝缘层、6为压焊丝、7为芯片、8为灰色表示电镀镍区域。
具体实施方式
下面结合附图与具体实施方式对本发明作进一步详细描述：
本实施例以T08型封装集成电路为例，成品基座经检验合格后用砂磨方法去掉基座内接线柱1端面的原有金属层，把基座插在挂具上，用10％的洗洁精清洗基座，再用清水冲洗，然后用5％的硫酸浸蚀内引线柱1需镀镍的区域8，再用去离子水充分清洗基座。把挂具带电放入镀槽，控制镀液仅仅接触需要镀镍的区域8，通电30分钟，然后把挂具带电取出镀槽，用去离子水充分清洗基座后烘干。镀槽内镀液成份：硫酸镍为200～240g/L，氯化镍为75～150g/L，硼酸为40～50g/L，添加剂适量；电镀条件：PH值为3.3～4.5，温度为43～57℃；电流密度为2～10.5A/dm2。清洗烘干后的基座再进行装结芯片，然后进入内引线键合的压焊工序，然后再进行下一封装工序。这样可以使基座外引线3表面、基座金属壳2表面及内引线柱1表面具有不同的金属层。既可以使器件外表具有其金属的保护性能和外观，又可以提高器件压焊的键合强度和键合强度的稳定性，而且使器件封装在压焊时更易于操作。所述砂磨方法，可以是用砂纸，人工打磨的方法。
为了验证本发明的效果，本发明申请人进行了采用本发明生产的产品的温度循环和温度贮存应力试验，温度循环按GJB548A方法1010A条件C，循环次数100次，温度贮存为175℃120小时再200℃120小时和225℃120小时，每120小时各抽取2只样品测试引线键合强度，从键合强度测试数据看没有发生不合格的情况。
为比较Ni-Al键合系统与Au-Al键合系统，还进行了对比试验：某型产品在175℃下保持120小时的温度应力试验后进行键合强度测试，Au-Al键合系统94个测试点中有11个点脱键，而采用本发明的产品Ni-Al键合系统同样测试94个点，无一脱键现象。当产品从175℃上升到200℃保持了120小时后，Au-Al键合系统产品的键合强度，同样测试94点，虽然可以测读数据，但键合强度急剧下降，测试时全部脱键；同条件下Ni-Al键合系统测试点无一例脱键。从对比试验可见：Ni-Al键合系统温度应力性能远优于Au-Al键合系统，说明本发明在实际效果上的优势。
另外，采用本发明生产的产品经1000小时稳态寿命试验和机械环境试验后，键合强度稳定；在较长时间内经用户使用，没有发现因键合强度下降导致器件失效。
本发明可应用于采用压焊键合的半导体器件封装的内引线键合。

Claims (3)

1、一种提高集成电路内引线键合可靠性的方法，其特征在于装结芯片和压焊前，增加电镀工序，所述电镀工序为除去内引线柱端面原有金属层，然后电镀镍，仅电镀集成电路基座的内引线柱部份。
2、根据权利要求1所述一种提高集成电路内引线键合可靠性的方法，其特征在于所述除去内引线柱端面原有金属层为砂磨方法。
3、根据权利要求1所述一种提高集成电路内引线键合可靠性的方法，其特征在于所述电镀工艺，其镀液成份：硫酸镍为200～240g/L，氯化镍为75～150g/L，硼酸为40～50g/L，添加剂适量；电镀条件：PH值为3.3～4.5，温度为43～57℃；电流密度为2～10.5A/dm2；通电时间为30分钟。
CNA2005100030898A 2005-06-01 2005-06-01 提高集成电路内引线键合可靠性的方法 Pending CN1716556A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102751206A (zh) * 2012-07-17 2012-10-24 贵州振华风光半导体有限公司 一种加固集成电路内引线键合力的方法
CN111962116A (zh) * 2020-07-06 2020-11-20 青岛凯瑞电子有限公司 一种防粗铝丝脱键的方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102751206A (zh) * 2012-07-17 2012-10-24 贵州振华风光半导体有限公司 一种加固集成电路内引线键合力的方法
CN102751206B (zh) * 2012-07-17 2015-01-21 贵州振华风光半导体有限公司 一种加固集成电路内引线键合力的方法
CN111962116A (zh) * 2020-07-06 2020-11-20 青岛凯瑞电子有限公司 一种防粗铝丝脱键的方法

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