Method and the equipment that is used to install semiconductor chip from paillon foil separating semiconductor chip
Technical field
The present invention relates to be used for from the method for paillon foil separating semiconductor chip and be used to install the equipment of semiconductor chip, this device is suitable for carrying out this method.
Background technology
Usually, semiconductor chip is to provide on the paillon foil that keeps in the frame (frame) that is known as adhesive tape (tape) in being expert at, and is used for using a kind of like this erection unit to handle.Semiconductor chip adheres to paillon foil.Frame with paillon foil is held by removable wafer platform.The wafer platform circulation is moved, so that provides semiconductor chip one by one at primary importance A, then picks up the semiconductor chip that is provided by the chip handgrip, and is placed on the second place B on the substrate.Removing the semiconductor chip that is provided from paillon foil is supported by the chip ejector (expert is known as the tube core ejector) that is arranged on below the paillon foil.Like this, usually, at least one thimble that is arranged in the chip ejector is supported the separation of semiconductor chip from paillon foil.
According to patent US4921564, a kind of method is known, utilizes this method, can be from paillon foil separating semiconductor chip, and need not the assistance of thimble and pick up this semiconductor chip by the chip handgrip.Utilize this method, but the paillon foil that will have a semiconductor chip is placed on the heating plate.On a side of paillon foil, this plate has cavity, vacuumizes for this cavity.When installing, on the one hand, vacuumize to cavity, make paillon foil be drawn in the cavity, and part is separated from semiconductor chip.On the other hand, in order additionally to reduce the bonding of semiconductor chip and paillon foil, paillon foil is heated to the temperature of 50 degree to 65 degree.This method can be handled a large amount of semiconductor chips, yet, quite big but under the extremely thin semiconductor chip situation, often occur in and vacuumize and when removing paillon foil, semiconductor chip rises and then falls back on the paillon foil, thereby adjacent semiconductor chip stack also can take place.
The thickness of the semiconductor chip that separates is continuing reduction.Today, thickness amounts to only 100 microns in many cases, and has the trend that further thickness is reduced to 75 to 50 microns.In addition, on the back side of wafer, has adhesive linkage.Therefore increased semiconductor chip bonding on wafer.The above-mentioned auxiliary technology of separating semiconductor chip down at thimble has reached its limit.According to also no longer prove effective under vacuum condition paillon foil being separated of US4921564: paillon foil no longer can be heated to the temperature of needed 50 degree to 65 degree, because adhesive linkage hardens under these temperature, makes semiconductor chip be adhered to paillon foil better.
Patent US6561743 discloses the other method that is used for from paillon foil separating semiconductor chip.Utilize this method, draw paillon foil at the edge with semiconductor chip to be separated, thus semiconductor chip and paillon foil on the edge by separated from one another.Before semiconductor chip self separated from paillon foil fully, the separation of this paillon foil just was stopped.In order to control separating of semiconductor chip and paillon foil, at first the chip handgrip is dropped on the semiconductor chip, and apply vacuum to semiconductor chip.Draw paillon foil at the edge then, separate fully from paillon foil up to semiconductor chip self.Patent application US2002/0129899 also discloses similar method.The shortcoming of these methods is, must therefore can damage adjacent semiconductor chip in 1.5 millimeter owing to separate required brim height.
The objective of the invention is to develop a kind of strong advantageous method, use this method can not damage adjacent semiconductor chip from paillon foil separating semiconductor chip.
Summary of the invention
The equipment that is used to install the semiconductor chip that adheres to paillon foil according to the present invention comprises: the wafer platform and the chip ejector that hold the paper tinsel with semiconductor chip, on the surface of paillon foil, it is corresponding and have an inclined-plane at demoulding edge that this chip ejector has a width with semiconductor chip to be separated, on demoulding edge, semiconductor chip separates with paillon foil.The surface on inclined-plane is formed concave surface, and, reach only about 0.3 millimeter maximum height at demoulding edge.Preferably, this surface is the cylinder with constant curvature.Utilize the concave shape on this inclined-plane, increase the bottom surface of semiconductor chip and the angle between the paillon foil, therefore reduce and separate the required power of paillon foil from semiconductor chip at the demoulding edge on inclined-plane.Therefore, the height at demoulding edge can be reduced to only 0.3 to 0.4 millimeter certain height.What be close to demoulding edge is the Support with groove.These grooves are parallel to detaching direction respectively or extend perpendicular to demoulding edge, and vacuumize to them.Wafer platform can move two vertical direction.
The separating and utilize picking up as follows of chip handgrip to carry out of semiconductor chip and paillon foil: beginning, carry out three steps in regular turn, so that aim at semiconductor chip to be separated with respect to the inclined-plane:
1. move wafer platform along first direction, parallel and extend up to the leading edge of first semiconductor chip to be separated along the demoulding edge on inclined-plane.
2. move wafer platform along second direction, up to first semiconductor chip to be separated with respect to the transverse edge on inclined-plane be positioned at central authorities and
3. vacuumize for the groove of Support, make that paillon foil is drawn to the Support.
In next procedure, first semiconductor chip separates with paillon foil and is positioned at the position of being picked up by the chip handgrip.
4. along first direction wafer platform is moved predetermined distance, this distance is generally about one to two millimeter, and is longer than the length of semiconductor chip to be separated.
Utilize this step, draw paillon foil at the demoulding edge on inclined-plane.Semiconductor chip is along with it moves.Like this, paillon foil oneself separation below semiconductor chip.The semiconductor chip part of separating with paillon foil is suspended in the air with angle, just as the plate that only supports on one side.When the rear end of semiconductor chip arrived the demoulding edge on inclined-plane, then semiconductor chip fell back on the paillon foil.Yet semiconductor chip is positioned on the Support now, is pulled in the groove of Support at this paillon foil.Therefore greatly reduced the bonding of semiconductor chip and paillon foil.
Because the length of presenting forward is approximately one to two millimeter, longer than the length of the semiconductor chip that is separated, therefore, second semiconductor chip to be separated has stretched out in the demoulding edge on inclined-plane.
At first the semiconductor chip of Fen Liing is positioned on the Support now, so that pick up by the chip handgrip.Measure the position and the direction of this semiconductor chip now by means of camera.If the physical location of measuring surpasses predetermined allowable limit with respect to departing from of desired location, then mobile wafer platform is up to physical location the departing from predetermined allowable limit with respect to desired location of semiconductor chip.This step and actual haveing nothing to do from the paillon foil separation processes.This device is ready to now so that the chip handgrip can pick up first semiconductor chip and it is placed on the substrate from paillon foil.In next procedure, carry out for example carrying out as follows by chip handgrip picking up semiconductor chip:
5. the chip handgrip is dropped on the semiconductor chip that is positioned on the Support, vacuumize, and apply predetermined pickup force for the chip handgrip, and rising chip handgrip.
Because the distance between the semiconductor chip is very little, therefore in some cases, before step 5, reduce the inclined-plane and may be need or highly significant so that the chip handgrip can pick up this semiconductor chip, and can not make the chip handgrip touch next semiconductor chip.
When the chip handgrip had picked up semiconductor chip, next semiconductor chip can separate from paillon foil, and is provided on the Support, so that pick up by the chip handgrip.Therefore wafer platform moves along first direction, and movable length is the length of this semiconductor chip and the mean breadth of cutting track.
Handle the semiconductor chip on the paillon foil line by line, thereby according to step 1 and 2, first semiconductor chip of every row is always aimed at respect to the inclined-plane.
Therefore the method for picking up thin semiconductor chips from paillon foil is characterised in that, occurs in two independently of one another, continuous steps from paillon foil separating semiconductor chip with by chip handgrip picking up semiconductor chip.After separating, semiconductor chip relands on paillon foil.Yet,, therefore significantly reduced the contact area between paillon foil and the semiconductor chip because the very big part of paillon foil is pulled in the groove in the Support.Correspondingly, also reduced the bonding of semiconductor chip and paillon foil.Can pass through chip handgrip picking up semiconductor chip easily.
Preferably, it is ultrasonic to apply for the inclined-plane with demoulding edge, and making can be by ultrasonic support separating technology.In addition, when demoulding edge Height Adjustable, be favourable, so that can before complete separating semiconductor chip, reduce height immediately from paillon foil.
The invention provides several advantages:
-since general 0.3 millimeter, at the most under 0.4 millimeter the situation, the difference in height of the demoulding edge on inclined-plane is very little, even therefore the edge of adjacent semiconductor chip also moves on the inclined-plane, also can not damage these adjacent semiconductor chips.
-because the chip handgrip needn't be supported separating of paillon foil and semiconductor chip, therefore the required time of bonding circulation is independent of separating technology.
-because the Support with groove does not hinder adjacent semiconductor chip, therefore can form Support with wide zone, make a same zone can similarly be used for little and big semiconductor chip.
-ideally, the width on inclined-plane is corresponding to the width of semiconductor chip.Therefore preferably beveled is become removable insert, this insert is inserted in the cavity in the chip ejector that can be extracted vacuum.
In step 4, therefore mobile wafer platform makes it to move with respect to the chip ejector.What can select is, also can the moving chip ejector, because this only is the problem that relatively moves between wafer platform and the chip ejector.
Described method is applicable to a large amount of foil-type and the adhesive coating of wafer well.Yet the part becomes liquid state to some bonding agent owing to cut the heat that produces when wafer is cut into semiconductor chip now.Cause the bonding agent in the semiconductor chip fringe region to combine like this, and/or adjacent semiconductor chip is by means of bonding agent still be connected to each other (that is, the separation of the adhesive linkage between the semiconductor chip is incomplete) with paillon foil.On the other hand, there is very resilient paillon foil.When keeping this paillon foil by the vacuum on the Support, so, when mobile wafer platform, paillon foil is not drawn on the inclined-plane, but the distortion that becomes.In order to address these problems, the present invention proposes the concrete measure of present elaboration.
In order to support separating of semiconductor chip and paillon foil, a measure is to have the thimble that can raise and reduce for the chip ejector is equipped with.For example thimble is that mode with the thimble piece disposes.Preferred thimble is formed with round end, makes them can not penetrate paillon foil.Above-mentioned steps 5 is replaced by the following step 5A.
5A. drop to the chip handgrip on the semiconductor chip or the small distance place of semiconductor chip top, described semiconductor chip is positioned at the Support, rising has the thimble piece of thimble, up to thimble paillon foil is pressed against semiconductor chip, and thimble piece and chip handgrip simultaneously then raise.
Like this, along with by vacuum paillon foil being pulled in the groove in the Support, paillon foil increased with separating gradually of semiconductor chip bottom surface, and up to the paillon foil between thimble head and semiconductor chip, paillon foil separates with semiconductor chip.
Equally, can carry out step 5A as prior art.Preferably, according to the method for describing in Chinese patent application CN1505122A, the document is introduced into for clear and definite reference at this.
Also exist some to use, using for these advantageously is not the whole bottom surface of semiconductor chip is separated with paillon foil but for example only to separate 90% of bottom surface.Do like this, just reduce the inclined-plane in case paillon foil has separated 90%.Under the situation that reduces the inclined-plane, be moved further wafer platform, arrive the demoulding edge on inclined-plane up to the leading edge of next semiconductor chip.The inclined-plane that raises once more now, and be moved further wafer platform, arrive its desired location on the Support up to semiconductor chip to be separated.Like this, paillon foil correctly separates with next semiconductor chip.Assisting down of thimble from the Support picking up semiconductor chip.
For fear of the distortion of paillon foil, a measure is to separate paillon foil with step seldom, and the Support is not vacuumized.Do like this, ended to vacuumize repeatedly on the Support, wafer platform is moved the part of semiconductor core leaf length, then vacuumize to the Support.By this way, paillon foil is separated with new length a slice of presenting forward of semiconductor chip with connecing a slice.
Description of drawings
The accompanying drawing that is incorporated in this specification and constitutes this specification part illustrates one or more embodiment of the present invention, and with describe one in detail and be used from and explain principle of the present invention and execution mode.Pattern in the accompanying drawing is not drawn in proportion.
In the drawings:
Fig. 1 has illustrated the device that is used to install semiconductor chip according to the present invention, and this device has the chip ejector,
Fig. 2 shows the plane graph of chip ejector,
Fig. 3 shows along the cross section of the chip ejector of the line I-I of Fig. 2,
Fig. 4-9 show according to first method, semiconductor chip is separated with paillon foil and pick up the technology of the semiconductor chip that is separated by means of the chip handgrip during continuous snapshots in time (snapshots),
Figure 10 has illustrated the further example of chip ejector,
Figure 11 shows the chip ejector with thimble piece,
Figure 12,13 show under thimble is supported picking up semiconductor chip and
Figure 14-17 shows according to the snapshots in time of further method during semiconductor chip separates.
Embodiment
Fig. 1 shows and is used for semiconductor chip 1,1 ', 1 " be installed to the rough schematic view of the device on the substrate 2. Semiconductor chip 1,1 ', 1 with the row and column setting " be attached on the paillon foil 4 that for example remains in the frame 3.This device has the removable wafer platform 5 that holds frame 3 and semiconductor chip 1 is provided one by one at primary importance A.At primary importance A, chip ejector 6 according to the present invention be set at paillon foil 4 below, this chip ejector 6 is the ejectors with thimble in this example.When removing semiconductor chip 1, chip ejector 6 plays the effect of supporting that it separates from paillon foil 4.Wafer platform 5 can move along x and two vertical direction of y.Paillon foil 4 is set, makes semiconductor chip 1,1 ', 1 " the edge almost be parallel to direction x and y.This device also has chip handgrip 7, and the semiconductor chip 1 that is used for providing at primary importance A is sent to the second place B on the substrate 2.Chip handgrip 7 is bonding 8 the componentries that can raise and reduce.Bonding 8 and chip handgrip 7 are together at position A and position B (perhaps several position B
1, B
2Deng) between move forward and backward.
Fig. 2 shows the plane graph of chip ejector 6, promptly towards the plane graph on the surface 9 (Fig. 1) of the chip ejector 6 of paillon foil 4.Fig. 3 shows along the cross section of the chip ejector 6 of the line I-I of Fig. 2.The surface 9 of chip ejector 6 comprises depression 10 and Support 13, opens the boring that can apply vacuum in depression 10, and the Support has the groove 12 that be arranged in parallel.Groove 12 extends along the x direction, and the tip 14 of groove 12 flushes with the surface 9 of chip ejector 6.On the one hand, distance between the groove 12 is enough big, when vacuumizing for groove 12 with box lunch, paillon foil 4 is pulled in the groove 12, on the other hand, distance between the groove 12 is enough little, when not separating with semiconductor chip in advance with convenient paillon foil 4, can not be positioned at adjacent semiconductor chip on the Support 13 owing to paillon foil 4 is pulled to damage in the groove 12 to small part.Insert 15 be inserted into and with the depression 10 precision-fit, this insert 15 comprises the inclined-plane 16 with concave surface 17.A side of 16 forms outstanding demoulding edge 18 on the inclined-plane, and thereon, paillon foil 4 separates with semiconductor chip 1.The opposite side 19 on inclined-plane 16 flushes with the surface 9 of chip ejector 6.Preferred concave surface 17 is cylinders, and its longitudinal axis is parallel to demoulding edge 18 and extends, and for example has 8 millimeters radius.The width B on inclined-plane 16 is substantially corresponding to the width of semiconductor chip to be separated.Difference in height Δ H between demoulding edge 18 and the Support 13 amounts to about 0.3 millimeter.Importantly demoulding edge 18 forms unexpected transformation, and semiconductor chip can not adapt to this when the x direction is presented wafer platform 5 forward.Demoulding edge 18 is parallel to the y direction and extends.Position A (Fig. 1) is positioned on the Support 13, preferably in the central.
The surface 17 on inclined-plane 16 forms concave surface and has following effect, that is, the angle α that the tangent line 21 that is suitable on the concave surface at demoulding edge 18 and vertical line 22 can be impaled is chosen as clearly less than 90o.Angle α is sharp-pointed more, and paillon foil 4 separates from semiconductor chip 1 self more goodly.
According to above-mentioned steps, produced separating of semiconductor chip 1 and paillon foil 4.Fig. 4-9 shows the continuous snapshots in time in separating technology and pick-up process process subsequently.Fig. 4-9 only shows and understands part required for the present invention, i.e. the semiconductor chip of going together mutually 1,1 ', 1 of inclined-plane 16 and Support 13 and paillon foil 4 and wafer to be separated successively ".
According to step 1 to 3, the positions wafer platform, make the leading edge of first semiconductor chip 1 in the delegation of wafer to be separated parallel and along the inclined-plane 16 demoulding edge 18 extends, and make first semiconductor chip 1 of this row to be separated be positioned at central authorities with respect to the longitudinal edge 20 (Fig. 2) on inclined-plane 16.In addition, vacuumize for the groove 12 of Support 13, make that the paillon foil 4 in this zone is pulled in the groove 12.This state is shown in Fig. 4.Now wafer platform 5 is presented predetermined distance, delta L forward on the x direction.Like this, paillon foil 4 is pulled on the demoulding edge 18 on inclined-plane 16.Semiconductor chip 1 therewith moves.Fig. 5 to 8 shows at this and presents continuous snapshots in time in the process forward.Owing to characterize the sharp angle of the geometry at demoulding edge 18, so semiconductor chip 1 self separates with paillon foil 4, and separating part stands in (Fig. 5,6) in the air with an angle.In case the rear portion of semiconductor chip 1 arrives demoulding edge 18 (Fig. 7), under action of gravity, semiconductor chip 1 serves as axle with its rear part edge and falls on the paillon foil 4 on the Support 13.
Since forward the length score of feeding from the length of semiconductor chip 1 grow up about one to two millimeter, therefore next semiconductor chip 1 ' to be separated has protruded into outside the demoulding edge 18 on inclined-plane 16.This state is shown in Fig. 8.
At first the semiconductor chip 1 of Fen Liing is positioned on the paillon foil 4 on the Support 13 now, prepares to be picked up by chip handgrip 7.Measure the position and the direction of this semiconductor chip 1 now by means of camera.If the physical location of measuring surpasses predetermined allowable limit with respect to departing from of desired location, then mobile wafer platform 5 is up to physical location the departing from predetermined allowable limit with respect to desired location of semiconductor chip 1.This step is irrelevant with the technology from the paillon foil actual separation.This device is ready to now so that chip 7 can pick up first semiconductor chip 1 and it is placed on the substrate 2 (Fig. 1) from paillon foil 4.Fig. 9 shows just by the state after chip handgrip 7 picking up semiconductor chip 1.
Design described embodiment, the fixed position A that makes semiconductor chip 1 be positioned to pick up by chip handgrip 7.Yet, can also design this erecting device, make semiconductor chip be positioned at different position A
1, A
2Deng, and pick up by chip handgrip 7.In this case, it can also be not mobile wafer platform 5, but by proper device only moving chip ejector 6 or mobile wafer platform 5 and chip ejector 6 both, so that 16 demoulding edge 18 separates paillon foil 4 on the inclined-plane, this is because for separating paillon foil 4, and it only is relatively moving between the demoulding edge 18 on wafer platform 5 and inclined-plane 16.
Figure 10 shows the further embodiment of chip ejector 6, in this embodiment, by means of the piston 24 that can move up and down by driver 23, can regulate the difference in height Δ H between demoulding edge 18 and the Support 13.Piston 24 is provided with near demoulding edge 18, make when rising piston 24, inclined-plane 16 with demoulding edge 18 diagonal opposed edges 25 on rotation so that the flushing with the surface 9 of chip ejector 6 of inclined-plane 16 with 18 opposed edges, 26 maintenances of demoulding edge.This design can make difference in height Δ H be adapted to the characteristic of paillon foil best.In addition, this design can the refinement separating technology, because in step 4, the difference in height Δ H that begins to locate has predetermined value Δ H
1, up to the state that Fig. 6 represents occurring.Reduce piston 24 now, make difference in height Δ H have littler value Δ H
2At least keep difference in height Δ H
2, up to state shown in Figure 7 occurring, when this state, under the effect of gravity, semiconductor chip 1 is an axle with its rear part edge, thereby separates with paillon foil 4 fully, and under the effect of gravity, falls on the Support 13.Then, the piston 24 that raises once more makes difference in height Δ H have value Δ H once more
1Value Δ H
2Can also be zero.
In addition, insert 15 preferably directly is coupled to ultrasonic transducer 27, perhaps as situation herein, can be coupled to ultrasonic transducer 27 by piston 24, and making can be by this separating technology of ultrasonic support.Can also be to be used for applying ultrasonic structure to entire chip ejector 6.
Figure 11 shows the exploded view of the embodiment of the chip ejector 6 with thimble piece 28.Tip 14 between the groove 12 comprises hole 29, and by hole 29, each thimble 30 of thimble piece 28 stretches out.Groove 12 can also comprise and can be used in the hole 31 that vacuumizes.Under assembling condition, can raise and reduce thimble piece 28 and inclined-plane 16.
Figure 12 and 13 shows the principle of using thimble 30 (details is not shown).Semiconductor chip 1 is positioned on the paillon foil 4 on the Support 13 of chip ejector 6.Chip handgrip 7 has been ready to picking up semiconductor chip 1.Along z direction rising thimble piece 28, make thimble 30 raise paillon foil 4 partly and do not penetrate it.This state is shown in Figure 12.In case reach required pickup force, chip handgrip 7 and thimble piece 28 further raise together.Like this, along with vacuum is moved paillon foil 4 downwards between thimble 30 in the groove 12, paillon foil 4 just separates below semiconductor chip 1 to a great extent.At last, stop to move of thimble piece 28.This state is shown in Figure 13.Further raise as fruit chip handgrip 7, then semiconductor chip 1 separates with paillon foil 4 at last.In this example, the tip of thimble 30 is not very sharp but slick and sly, can not penetrate paillon foil 4 like this.
Equally, can use thimble piece 28 as is common in the prior art.Preferably, be applied in the method for describing among the Chinese patent application CN1505122A.
Can revise the method that paillon foil 4 is removed on 100% ground below semiconductor chip 1 that is used for of Fig. 4 to 8 explanation, so that recently below semiconductor chip 1, remove paillon foil 4 with littler percentage, for example 80% or 90%.Fig. 6 shows the state of removing paillon foil 4 on about 80% length of semiconductor chip 1.Finish step 1 after 3,, do not removing paillon foil 4 fully,, reducing inclined-plane 16,, be moved further wafer platform 5, reaching desired location on the Support 13 up to semiconductor chip 1 at step 4C at step 4B at step 4A:
4A. at first direction wafer platform 5 is moved predetermined distance, this distance is less than the length of semiconductor chip to be separated 1.
4B. reduce inclined-plane 16, make demoulding edge 18 no longer stretch out in outside the Support 13.(this state is shown in Figure 14).
4C. move wafer platform 5 at first direction, arrive the demoulding edge 18 (this state is shown in Figure 15) on inclined-plane 16 up to next semiconductor chip 1 '.
4D. rising inclined-plane 16.
4E. move wafer platform 5 at first direction, the desired location (this state is shown in Fig. 8) on semiconductor chip 1 arrival Support 13.
After this, under the support of thimble 30, pass through chip handgrip 7 picking up semiconductor chip 1.
Utilize the example of describing at present, 13 vacuumize for groove 12 in the Support, and mobile simultaneously wafer platform 5 is so that remove paillon foil 4.This method is applicable to the paillon foil that slides on Support 13.Yet, also exist and on Support 13, do not slide but the paillon foil of distortion.For this paillon foil, omit step 3, and step 4 be amended as follows:
4AA. wafer platform 5 is moved predetermined short distance at first direction.
Owing to vacuumize for Support 13, so paillon foil 4 is not pulled in the groove 12 of Support 13, therefore do not remove paillon foil 4 below semiconductor chip 1 yet.Figure 16 shows implementation step 4AA state afterwards for the first time.
4BB. vacuumize for Support 13.
In case vacuumize for Support 13, paillon foil 4 just is pulled in the groove 12 of Support 13, therefore below the semiconductor chip 1 that stretches out in demoulding edge 18, removed paillon foil 4.Figure 17 shows implementation step 4BB state afterwards for the first time.
4CC. discharge the vacuum of Support 13.
4DD. repeating step 4AA to 4CC is up to removing paillon foil 4 from semiconductor chip 1 fully or removing the degree that goes to hope.
4EE. discharge the vacuum of Support 13, and move wafer platform 5 at first direction, stretch out in the predetermined short distance in demoulding edge 18 on inclined-plane 16 up to next semiconductor chip 1 ', and if desired, repeating step 4AA to 4CC, the desired location above semiconductor chip 1 arrival Support 13.
Though illustrate and described embodiments of the invention and application, it should be apparent that for the those skilled in the art that enjoy disclosure interests under the situation that does not break away from inventive concept, the many modifications except above-mentioned all are fine.Therefore, except the spirit of additional claim and equivalent thereof, otherwise the present invention is not restricted.