CN1715850A - Glass substrate and capacitance-type pressure sensor using the same - Google Patents
Glass substrate and capacitance-type pressure sensor using the same Download PDFInfo
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- CN1715850A CN1715850A CN 200510081076 CN200510081076A CN1715850A CN 1715850 A CN1715850 A CN 1715850A CN 200510081076 CN200510081076 CN 200510081076 CN 200510081076 A CN200510081076 A CN 200510081076A CN 1715850 A CN1715850 A CN 1715850A
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Abstract
The present invention provides a glass substrate used in an electrostatic capacitive pressure transducer for accurately detecting the pressure change. The glass substrate (11) is provided with a pair of main faces (11a, 11b) oppositely arranged. An island body (12a, 12b) made from silicon is embedded in the glass substrate (11) and island bodies (12a, 12b) are respectively exposed on the two main faces of the glass substrate (11). On the main surface (11a) of the glass substrate (11), the exposed part on one end of the island body (12a) is electrically connected with the ground, thus forming an electrode (13a); the exposed part on one end of the island body (12b) is electrically connected with the ground, thus forming an electrode (13b). On the main surface (11b) of the glass substrate (11), the exposed part on the other end of the island body (12a) is electrically connected with the ground, thus forming an electrode (14). The main face (11b) of the glass substrate (11) is jointed with a silicon lining (15) with a pressure-sensitive membrane (15a).
Description
Technical field
The present invention relates to glass substrate and on glass substrate, have capacitance-type pressure sensor as the silicon diaphragm of pressure sensitive portion.
Background technology
As such pressure transducer, the differential pressure type pressure transducer of measuring the type of pressing relatively and the absolute pressure type pressure transducer of measuring the type of absolute pressure are arranged.
Figure 10 is the sectional view that the schematic configuration of existing capacitance-type pressure sensor is shown.Is that the silicon substrate 3 and the glass substrate 4 of pressure sensitive film 2 is joined together by having acceptance by the movable electrode of measuring pressure, has constituted the capacitance-type pressure sensor 1 shown in Figure 10.On the surface of glass substrate 4 sides of silicon substrate 3, be provided with electrode 5.Between pressure sensitive film 2 and glass substrate 4, be provided with the interval of regulation, formed spatial portion 6.Be provided with fixed electorde 7 on the glass substrate 4 in this spatial portion 6.On glass substrate 4, be provided with through hole 4a, on the bottom surface and side of this through hole 4a, be formed with connection electrode 8 with being electrically connected with fixed electorde 7.
No. 2772111 communique of [patent documentation 1] Japan special permission.
The following making of existing capacitance-type pressure sensor shown in Figure 10.At first, be processed to form through hole 4a by sandblast on glass substrate 4, the glass substrate that will be formed with through hole 4a engages with silicon substrate, in through hole 4a part residual silicon, to cover through hole 4a, removes other silicon by only.Then, form fixed electorde 7 and connection electrode 8 with being electrically connected, afterwards, will have pressure sensitive film 2 and be provided with the silicon substrate of electrode 5, engage with glass substrate 4 in the mode that forms spatial portion 6 in glass substrate 4 sides with residual silicon.
But existing capacitance-type pressure sensor is processed to form through hole 4a with sandblast as described above, forms connection electrode 8 in the side of through hole 4a afterwards.If implement common sandblast processing, then because machined surface becomes very coarse state, connection electrode 8a well therefore just can not be covered on this machined surface.Therefore, the problem that has connection electrode 8 broken strings.In addition, in such structure, because machined surface is in coarse state, therefore, (カ バ レ ッ ジ) is insufficient in the effective coverage of connection electrode, so poor air-tightness.If impermeability is low, pressure sensitive film just can not be worked well, and correctly detected pressures changes.
Summary of the invention
The present invention is in view of the relevant issues point, and its purpose is to provide a kind of capacitance-type pressure sensor glass substrate of the variation of detected pressures correctly.
Glass substrate of the present invention is characterised in that to have: the glass substrate main body with a pair of mutual opposed interarea; Be embedded in the silicon island shape body in the above-mentioned glass substrate main body, at least a portion of this silicon island shape body is exposed the both sides of above-mentioned a pair of interarea.
According to this structure, can in interface between glass substrate and the island body and the interface between glass substrate and the silicon substrate, bring into play high-adhesiveness, and can form the wiring that begins from fixed electorde.Therefore, can access the glass substrate that capacitance-type pressure sensor that a kind of detected pressures correctly changes is used.
In glass substrate of the present invention, above-mentioned silicon island shape body is preferably in a side the interarea of above-mentioned glass substrate main body, utilizes the silicon layer mutual conduction on the interarea that is formed on this side.
In glass substrate of the present invention, above-mentioned silicon island shape body preferably has the metal level of imbedding, and this metal level is exposed at least one side's of above-mentioned glass substrate main body interarea.According to this structure, can reduce the resistance in the conducting portion of island body, can realize the equipment low power consumption that uses.
In glass substrate of the present invention, be preferably in the interface of above-mentioned glass substrate main body and above-mentioned silicon island shape body and have Si-Si key or Si-O key.According to this structure, owing to have Si-Si key or Si-O key in the interface between glass substrate main body and above-mentioned silicon island shape body, therefore, junction of glass substrate body and silicon island shape body securely, adhesiveness raising between the two.
Capacitance-type pressure sensor of the present invention is characterised in that to have: above-mentioned glass substrate; Electrode is arranged on the interarea that above-mentioned silicon island shape body exposed, and is electrically connected with above-mentioned silicon island shape body; Silicon substrate, be arranged on the interarea that is formed with above-mentioned electrode, above-mentioned silicon substrate have be positioned at from above-mentioned electrode predetermined distance locational, according to the pressure sensitive film of being carried out displacement by measuring pressure, detect the variation of the electrostatic capacitance between above-mentioned electrode and the above-mentioned pressure sensitive film, be used as pressure and change.
According to this structure, because the high adhesiveness of performance in interface between glass substrate and island body and the interface between glass substrate and the silicon substrate, therefore, the displacement that can regard pressure sensitive film as correctly reflects by measuring pressure.Thereby, can between pressure sensitive film and fixed electorde, correctly detect electrostatic capacitance, can correctly detect and the corresponding pressure variation of the variation of electrostatic capacitance.
The manufacture method of glass substrate of the present invention is characterised in that to have: the operation that forms the island body on surface of silicon substrate; Under heating condition, above-mentioned island body is pressed in the glass substrate, engages the operation of above-mentioned silicon substrate and above-mentioned glass substrate; Grind the surface of above-mentioned glass substrate, the operation that above-mentioned island body is exposed from the surface of above-mentioned glass substrate.
According to this method, can high-adhesiveness ground junction of glass substrate and the island body between and between glass substrate and the silicon substrate.Thereby, can access the capacitance-type pressure sensor glass substrate that a kind of detected pressures correctly changes.
In the manufacture method of glass substrate of the present invention, be preferably on the above-mentioned surface of silicon substrate and form mask, and, form above-mentioned island body by using this mask that above-mentioned silicon substrate is carried out blasting treatment.In addition, in the manufacture method of glass substrate of the present invention, preferably form above-mentioned island body by the above-mentioned surface of silicon substrate of hemisect.
The manufacture method of capacitance-type pressure sensor of the present invention is characterised in that, comprising: utilize said method to make the operation of glass substrate; On above-mentioned glass substrate, form the operation of electrode in the mode that is electrically connected with the above-mentioned island body that exposes from the surface of above-mentioned glass substrate; To have according to the silicon substrate that is carried out the pressure sensitive film of displacement by measuring pressure, so that above-mentioned pressure sensitive film is positioned at the operation that the locational mode from above-mentioned electrode predetermined distance engages with above-mentioned glass substrate.
According to this method, can high-adhesiveness ground junction of glass substrate and the island body between and between glass substrate and the silicon substrate.Thereby, can between pressure sensitive film and fixed electorde, correctly detect the variation of electrostatic capacitance, can access the capacitance-type pressure sensor that a kind of detected pressures correctly changes.
The invention effect
According to the present invention, owing to improved the adhesiveness at the interface between glass substrate and the silicon substrate, therefore, can improve the fixed electorde in the capacitance-type pressure sensor and the impermeability of the spatial portion between the movable electrode, can correctly detect with by the corresponding electrostatic capacitance of measuring pressure.
Description of drawings
Fig. 1 is the sectional view that the schematic configuration of the capacitance-type pressure sensor with glass substrate that embodiments of the present invention 1 relate to is shown.
Fig. 2 (a)～(e) is the sectional view of the manufacture method of the glass substrate that is used to illustrate that embodiments of the present invention 1,2 relate to.
Fig. 3 (a)～(d) is explanation forms the method for island body on silicon substrate figure.
Fig. 4 is explanation forms the method for island body on silicon substrate figure.
Fig. 5 (a)～(e) is used for explanation after having formed layer on the silicon substrate, this silicon substrate is pressed into the figure of the operation in the glass substrate.
Fig. 6 (a) and (b) are figure that other structures of island body are shown.
Fig. 7 is used for the sectional view of manufacture method that the capacitance-type pressure sensor of the glass substrate that obtains at Fig. 2 (e) has been used in explanation.
Fig. 8 is the sectional view that the schematic configuration of the capacitance-type pressure sensor with glass substrate that embodiments of the present invention 2 relate to is shown.
Fig. 9 (a) and (b) are to be used for the sectional view of manufacture method that the capacitance-type pressure sensor of the glass substrate that obtains at Fig. 2 (d) has been used in explanation.
Figure 10 is the sectional view that the schematic configuration of existing capacitance-type pressure sensor is shown.
Embodiment
Below, with reference to accompanying drawing, describe embodiments of the present invention in detail.
(embodiment 1)
Fig. 1 is the sectional view that the schematic configuration of the capacitance-type pressure sensor with glass substrate that embodiments of the present invention 1 relate to is shown.
11 illustrate glass substrate among the figure.Glass substrate 11 has opposed a pair of interarea 11a, 11b mutually.In glass substrate 11, be embedded with the island body 12a, the 12b that constitute by silicon.Island body 12a is the link with fixed electorde, and island body 12b is the link with movable electrode.Island body 12a, 12b expose on two interareas of glass substrate 11 respectively.Have again, narrate later on about the formation of this island body 12a, 12b.
On the interarea 11a of glass substrate 11, formed electrode 13a with the side's of island body 12a exposed portions serve with being electrically connected, formed electrode 13b with the side's of island body 12b exposed portions serve with being electrically connected.On same interarea 11a, electrode 13a, 13b are set as described above, are connected with external unit easily.In addition, on the interarea 11b of glass substrate 11, formed electrode 14 with the opposing party's of island body 12a exposed portions serve with being electrically connected.
On the interarea 11b of glass substrate 11, engaged silicon substrate 15 with pressure sensitive film 15a (movable electrode).By utilizing etching etc. to form recess respectively, be provided with pressure sensitive film 15a from the two sides of silicon substrate 15.The recess of the glass substrate composition surface side of silicon substrate 15 has the size that can accommodate electrode 14 at least, constitutes spatial portion (gap) 15c by engage silicon substrate 15 with glass substrate 11.That is, side 15b and the pressure sensitive film 15a by the recess of silicon substrate 15 constitutes spatial portion 15c.Like this, just between pressure sensitive film 15a and electrode 14, be provided with the interval of regulation, between pressure sensitive film 15a and electrode 14, produce electrostatic capacitance.
Preferably glass substrate 11 has high-adhesiveness with the interface 11c of island body 12a, 12b.As described later, form this interface 11c in the glass substrate 11 by under heating condition, island body 12a, 12b being pressed into.In the interface 11c that obtains by such method, can bring into play high-adhesiveness, but handle, just can further improve adhesiveness by after island body 12a, 12b being pressed in the glass substrate 11, implementing anodic bonding.Described anodic bonding is handled, and is meant to apply the voltage of regulation by the temperature (for example below 400 ℃) in regulation (for example 300V～1kV), produce big electrostatic attraction between silicon and glass makes it to cause the processing of covalent bond in the interface.Covalent bond on this interface is Si-Si key or the Si-O key between the Si atom that comprises in the Si atom of silicon and the glass.Thereby, utilizing this Si-Si key or Si-O key, silicon engages securely with glass, the very high adhesiveness of performance in interface between the two.In order to carry out such anodic bonding expeditiously,, preferably comprise alkali-metal glass materials (for example pyrex (registered trademark) glass) such as sodium as the glass material of glass substrate 11.
This in the interarea 11b of glass substrate 11 and the interface between the silicon substrate 15 too.That is, implement the anodic bonding processing, just can improve adhesiveness by on the interarea 11b of glass substrate 11, carrying silicon substrate 15 backs.In the interface 11c of glass substrate 11 and island body 12a and the interface 11d between glass substrate 11 and the silicon substrate 15, bring into play high-adhesiveness as described above, the impermeability height in the spatial portion 15c that can guarantee to be constituted between the interarea 11b of pressure sensitive film 15a and glass substrate 11.
In having the capacitance-type pressure sensor of this spline structure, between the electrode 14 on pressure sensitive film 15a and the glass substrate 11, has the electrostatic capacitance of regulation.When this capacitance-type pressure sensor was exerted pressure, pressure sensitive film 15a can move according to pressure.Like this, pressure sensitive film 15 displacements.At this moment, the electrostatic capacitance change between the electrode 14 on pressure sensitive film 15a and the glass substrate 11.Thereby, can its variation be changed as pressure with this electrostatic capacitance as parameter.As mentioned above, owing to bring into play high-adhesiveness among interface 11c between glass substrate 11 and the island body 12a and the interface 11d between glass substrate 11 and the silicon substrate 15, therefore, the displacement of pressure sensitive film 15 can be regarded as only by measuring pressure.Thereby, can between pressure sensitive film 15a and electrode 14, correctly detect electrostatic capacitance, can correctly detect and the corresponding pressure variation of the variation of electrostatic capacitance.
Below, the manufacture method of the capacitance-type pressure sensor of the glass substrate of having used present embodiment is described.Fig. 2 (a)～(e) is the sectional view of the manufacture method of the glass substrate that is used to illustrate that embodiments of the present invention 1 relate to.In addition, Fig. 3 is used for the sectional view of manufacture method that the capacitance-type pressure sensor of the glass substrate that obtains at Fig. 2 (e) has been used in explanation.
At first, prepare to have mixed low-resistance silicon substrate 12 of impurity.As impurity, can be n type impurity, also can be p type impurity.Its concentration for example is made as 0.01 Ω cm.Behind this silicon substrate of etching, form island body 12a, 12b shown in Fig. 2 (a).Etching can be a dry etching, also can be wet etching.Wherein, under the situation of wet etching, preferably stipulate the crystal face on the surface of silicon substrate 12, carry out the discrepant anisotropic etching of etching rate.Have, for engaging of described later and glass substrate, preferably the bight 12c of island body 12a, 12b is a curved surface as far as possible again.
Then, shown in Fig. 2 (b), on the silicon substrate 12 that has formed island body 12a, 12b, place glass substrate 11.In addition,, shown in Fig. 2 (c), push silicon substrate 12, island body 12a, 12b are pressed among the interarea 11a of glass substrate 11, engage silicon substrate 12 and glass substrate 11 afterwards to glass substrate 11 with this silicon substrate 12 and glass substrate 11 heating.At this moment temperature is smaller or equal to the silicon fusing point, preferably the flexible temperature of glass.For example, heating-up temperature is about 600 ℃.
In addition, for the adhesiveness among the interface 11c of the island body 12a, the 12b that further improve silicon substrate 12 and glass substrate 11, preferably carry out the anodic bonding processing.Under this situation, on silicon substrate 12 and glass substrate 11, add electrode respectively, under about heating condition below 400 ℃, apply about 300V～1kV voltage and carry out.Like this, the adhesiveness among the 11c of interface just further increases, and can improve the impermeability of the spatial portion 15c of static capacity type sensor.
Then, shown in Fig. 2 (d),, island body 12a, 12b are partly exposed in interarea 11b by the interarea 11b side of milled processed glass substrate 11.So just become the state of in glass substrate 11, imbedding island body 12a, 12b.In addition, shown in Fig. 2 (e), by milled processed silicon substrate 12, island body 12a, 12b partly expose from the two sides of glass substrate 11.Make glass substrate of the present invention (Fig. 2 (d), (e)) like this.
At this, the operation of the glass substrate that manufacturing be the present invention relates to describes.Fig. 3 (a)～(d) be explanation as Fig. 2 (a) the figure of the method for formation island body 12a, 12b on the silicon substrate that is shown in 11.At first, shown in Fig. 3 (a), on the formation zone of island body 12a, 12b on a side's of silicon substrate 21 the interarea, mask 22 is set.As mask 22, can use masterplate mask (ス テ Application シ Le マ ス Network) and the mask that constitutes by resist or silicon oxide layer etc.Constituting under the situation of mask 22 with resist or silicon oxide layer, on silicon substrate 21, form resist layer or silicon oxide layer, and utilize photoetching process that resist layer or silicon oxide layer are carried out composition (パ one ニ Application グ), residual resist layer on the formation zone of island body 12a, 12b.
As if the silicon substrate 21 shown in wet etching Fig. 3 (a), just can on silicon substrate 21, form the island body 21b of shape shown in Fig. 3 (c).As the mordant that is used in wet etching, can use TMAH (tetramethylammonium hydroxide) aqueous solution and KOH solution etc.By forming island body 21b with wet etching in this wise, just can be on silicon substrate 21 aligned position formation island body 21b accurately.In the shape shown in Fig. 3 (c),, therefore, favourable in the engaging of described later and glass substrate because island body 21b is cone shape.
As if the silicon substrate 21 shown in blasting treatment Fig. 3 (a), just can on silicon substrate 21, form the island body 21c of the shape shown in Fig. 3 (d).For example using, the particle of micron unit particle diameter carries out blasting treatment.By forming island body 21c with blasting treatment in this wise, just can both keep the perpendicularity of island body 21c sidewall, can form cone shape again, therefore, can improve the configuration density of island body 21c.In addition, blasting treatment does not need the such high price equipment of dry etching device, can realize cost degradation, can shorten engineering time yet.
In addition, also can use the back, surface of cutter 23 hemisects processing (groove processing) silicon substrate 21 to form island body 21d as shown in Figure 4.By forming island body 21d with hemisect in this wise, can improve the perpendicularity of island body 21d sidewall, can improve the configuration density of island body 21d.In addition, hemisect does not need the such high price equipment of dry etching device, can realize cost degradation.
Under situation about silicon substrate 12 being pressed in the glass substrate 11, owing to might in the bight 12c of island body 12a, the 12b shown in Fig. 2 (a), form gap (hole), therefore, be preferably among the 12c of bight, between silicon substrate 12 and glass substrate 11, the middle layer is set, to improve both adhesivenesses.Fig. 5 (a)～(e) is used for explanation after having formed layer on the silicon substrate, this silicon substrate is pressed into the figure of the operation in the glass substrate.
As mentioned above, on silicon substrate 12, form island body 12a, 12b.Then, shown in Fig. 5 (a), on the silicon substrate 12 that has formed island body 12a, 12b, form silicon oxide layer 18, with this silicon oxide layer 18 as the middle layer between silicon substrate 12 and the glass substrate 11.Utilize for example sputter and CVD to form silicon oxide layer 18.As the material that is arranged on the middle layer between silicon substrate 12 and the glass substrate 11, can adopt the heat that hot press produced of utilization when being pressed into silicon substrate 12 in the glass substrate 11 to form the material of Si-O key or Si-Si key with silicon substrate 12 and/or glass substrate 11.As such material, Si oxide, glass etc. can have been exemplified.In addition, suitably set the thickness in middle layer, make to form Si-O key or Si-Si key with silicon substrate 12 and/or glass substrate 11.
Then, shown in Fig. 5 (b), on the silicon substrate 12 that has formed silicon oxide layer 18, place glass substrate 11.Further this silicon substrate 12 of heating and glass substrate 11, shown in Fig. 5 (c), be pressed into silicon substrate 12 on the glass substrate 11 after, island body 12a, 12b are pressed among the interarea 11a of glass substrate 11, engage silicon substrate 12 and glass substrate 11.At this moment, between silicon substrate 12 and glass substrate 11, be provided with silicon oxide layer 18.In addition, heating-up temperature is during smaller or equal to the silicon fusing point, preferably the flexible temperature of glass.For example heating-up temperature is about 600 ℃.
In addition, for the interface between further raising silicon substrate 12 and the silicon oxide layer 18 and the adhesiveness at the interface between glass substrate 11 and the silicon oxide layer 18, preferably carry out anodic bonding and handle.Under this situation, add electrode respectively on silicon substrate 12 and glass substrate 11, applying about 300V～1kV voltage under approximately smaller or equal to 400 ℃ heating condition carries out.Like this, the adhesiveness in the interface further increases, the impermeability of the spatial portion 15c in the time of can improving as static capacity type sensor.
Then, shown in Fig. 5 (d), carry out milled processed, island body 12a, 12b are partly exposed at interarea 11b by interarea 11b side to glass substrate 11.Become the state of in glass substrate 11, imbedding island body 12a, 12b like this.In addition, shown in Fig. 5 (e), by milled processed silicon substrate 12, island body 12a, 12b partly expose from the two sides of glass substrate 11.Make glass substrate of the present invention (Fig. 5 (d), (e)) like this.
In this wise, by between silicon substrate 12 and glass substrate 11, being provided with silicon oxide layer 18 as the middle layer, in the bight 12c of island body 12a, 12b, between silicon oxide layer 18 and silicon substrate 12 and glass substrate 11, form Si-O key or Si-Si key, therefore, can improve silicon substrate 12 among the 12c of bight and the adhesiveness between the glass substrate 11.Like this, the impermeability between silicon substrate 12 and the glass substrate 11 can be further improved, the gas leakage in both interfaces can be reduced.Imbed the characteristic of silicon substrate by such improvement to glass substrate, can make island height densityization and miniaturization.
In the glass substrate that the present invention relates to shown in Fig. 2 (d), (e), in order to reduce the resistance of island body 12a, 12b part, shown in Fig. 6 (a) and (b), the inside that is preferably in island body 12a, 12b forms metal level.In the structure shown in Fig. 6 (a), form recess in the side's of island body 12a, 12b interarea side, in this recess, imbed metal and formed metal level 19.In the structure shown in Fig. 6 (b), form recess respectively in two sides' of island body 12a, 12b interarea side, in these recesses, imbed metal and formed metal level 19a, 19b.Have, the material as such metal level 19 has exemplified low electrical resistant materials such as Cu again.By in island body 12a, 12b, imbedding metal level 19, and metal level 19 is exposed at least one side's of glass substrate 11 interarea, just can reduce the resistance in the conducting portion of island body 12a, 12b, can realize the low power consumption of employed equipment.Its result just can be applicable to the glass substrate that the present invention relates in high-frequency apparatus etc.
In island body 12a, 12b, form under the situation of metal level 19, after having made the glass substrate shown in Fig. 2 (e), mask is set,, on island body 12a, 12b, form recess by this mask in the zone of the metal level 19 that forms island body 12a, 12b.Utilize dry etching and sandblast etc. to form this recess.Then, in formed recess, imbed metal and form metal level 19.Utilize for example sputter, evaporation, plating etc. in recess, to imbed metal.Afterwards, the surface of milled processed glass substrate makes it smooth as required.
Use the glass substrate of making as mentioned above to make capacitance-type pressure sensor.As shown in Figure 7, on the interarea 11b of glass substrate 11, form electrode 14 with island body 12a with being electrically connected.Under this situation, at first, covering electrodes material on the interarea 11b of glass substrate 11, form resist film in the above, this resist film is carried out composition (photoetching), make to form regional residual resist film, this resist film as the mask etching electrode material, is removed residual resist film afterwards at electrode.
Then, as shown in Figure 1, will have according to by measuring pressure and the silicon substrate 15 of the pressure sensitive film 15a of displacement, so that pressure sensitive film 15a is positioned on the interarea 11b that the mode of the position of ionization electrode 14 predetermined distances is bonded on glass substrate 11.Under this situation, at first, after being provided with recess, two interarea side etch silicon substrates 15 form pressure sensitive film 15a respectively.As etching, can be dry etching, also can be wet etching.Wherein, under the situation of wet etching, preferably stipulate the crystal face on silicon substrate 15 surfaces, carry out the discrepant anisotropic etching of etching rate.Particularly, owing on the recess of the spatial portion 15c that does not constitute silicon substrate 15, form conical surface 15d, therefore, utilize anisotropic etching to form recess.
The recess of the spatial portion 15c side of silicon substrate 15 is formed bigger than electrode 14, with can be around the electrode 14 on the glass substrate 11.In addition, the interval between consideration pressure sensitive film 15a and the electrode 14 and the thickness of electrode 14 etc. decide concave depth.Silicon substrate 15 mountings that the two sides of making is like this had recess and are implemented anodic bonding and are handled on the interarea 11b of glass substrate 11, make this moment have conical surface 15d recess up, that is, make that the recess and the glass substrate 11 that do not have the conical surface are opposed.At this moment, the voltage that silicon substrate 15 and glass substrate 11 are applied about 500V under approximately smaller or equal to 400 ℃ heating condition carries out.Like this, the adhesiveness in the interface between silicon substrate 15 and the glass substrate 11 further increases, and can improve the impermeability of spatial portion 15c.
Then, on the interarea 11a of glass substrate 11, form electrode 13a, 13b with island body 12a, 12b respectively with being electrically connected.Under this situation, at first, covering electrodes material on the interarea 11a of glass substrate 11, and form resist film in the above, this resist film is carried out composition (photoetching), make to form residual resist film on the zone, this resist film is come the etching electrode material as mask, remove residual resist film afterwards at electrode.
The capacitance-type pressure sensor that obtains like this, its fixed electorde are that electrode 14 is electrically connected with electrode 13a by island body 12a, and movable electrode is that pressure sensitive film 15a is electrically connected with electrode 13b by island body 12b.Thereby, just can obtain the signal of the variation of detected electrostatic capacitance between pressure sensitive film 15a and electrode 14 by island body 12b from electrode 13a.Can calculate mensuration pressure according to this signal.
(embodiment 2)
Fig. 8 is the sectional view that the schematic configuration of the capacitance-type pressure sensor with glass substrate that embodiments of the present invention 2 relate to is shown.Have, in Fig. 8, the part mark mark identical with Fig. 1 for identical with Fig. 1 omits its detailed description again.
On the interarea 11a of glass substrate 11, formed electrode 16a with the exposed portions serve of island body 12a with being electrically connected, formed electrode 16b with the exposed portions serve of island body 12b with being electrically connected.
On the interarea 11b of glass substrate 11, engaged silicon substrate 15 with pressure sensitive film 15a (movable electrode).Pressure sensitive film 15a has the structure same with embodiment 1.Like this, the interval of regulation is set between pressure sensitive film 15a and electrode 14, between pressure sensitive film 15a and electrode 14, produces electrostatic capacitance.In addition, on the face opposite, be provided with the electrode 17 that movable electrode is used with the composition surface with glass substrate 11 of silicon substrate 15.
With embodiment 1 similarly, the interface 11d performance high-adhesiveness of the interface 11c of glass substrate 11 and island body 12a and glass substrate 11 and silicon substrate 15.Therefore, the impermeability height in the spatial portion 15c that can guarantee to constitute between the interarea 11b of pressure sensitive film 15a and glass substrate 11.
In capacitance-type pressure sensor with such structure, with embodiment 1 similarly, between the electrode 14 on pressure sensitive film 15a and the glass substrate 11, have the electrostatic capacitance of regulation.When this capacitance-type pressure sensor was exerted pressure, pressure sensitive film 15a moved according to pressure.Like this, pressure sensitive film 15a displacement, the electrostatic capacitance between the electrode 14 on pressure sensitive film 15a and the glass substrate 11 changes.Thereby, the variation of this electrostatic capacitance can be changed as pressure.As mentioned above, owing to bring into play high-adhesiveness among interface 11c between glass substrate 11 and the island body 12a and the interface 11d between glass substrate 11 and the silicon substrate 15, therefore, the displacement of pressure sensitive film 15a can be regarded as only by measuring pressure.Thereby the pressure sensitive film 15a that is produced by the displacement of pressure sensitive film 15a and the variation of the electrostatic capacitance between the electrode 14 correctly are reflected as pressure and change, and correctly detected pressures changes.
Below, describe for the manufacture method of the capacitance-type pressure sensor of the glass substrate of having used present embodiment.Fig. 9 is used for the sectional view of manufacture method that the capacitance-type pressure sensor of the glass substrate that obtains at Fig. 2 (d) has been used in explanation.
The method of making glass substrate is identical with embodiment 1.In the present embodiment, the structure that use Fig. 2 (d) illustrates is as glass substrate.Shown in Fig. 9 (a), on the interarea 11b of glass substrate 11, form electrode 16a, 16b with island body 12a, 12b respectively with being electrically connected.Under this situation, at first, covering electrodes material on the interarea 11b of glass substrate 11, form resist film in the above, and this resist film carried out composition (photoetching), make to form residual resist film on the zone, this resist film as the mask etching electrode material, is removed residual resist film afterwards at electrode.
Then, shown in Fig. 9 (b), will have according to by measuring pressure and the silicon substrate 15 of the pressure sensitive film 15a of displacement, so that pressure sensitive film 15a is positioned on the interarea 11b that the locational mode of ionization electrode 16a predetermined distance is bonded on glass substrate 11.The formation method of pressure sensitive film 15 is identical with embodiment 1.
Afterwards, on the reverse side 15e on silicon substrate 15 and composition surface glass substrate 11, form electrode 17.Under this situation, at first, covering electrodes material on the face 15e of silicon substrate 15, form resist film in the above, and this resist film carried out composition (photoetching), make to form regional residual resist film, this resist film as the mask etching electrode material, is removed residual resist film afterwards at electrode.At this, electrode 17 is arranged on the face 15e of silicon substrate 15, but also electrode 17 can be arranged on the interarea 11b of glass substrate 11, and be arranged on the zone that does not engage and engage with silicon substrate 15 electricity with island body 12a, 12b electricity.Under this situation, because electrode 17 is formed on the face identical with electrode 16b, therefore, the degree of freedom of distributing has increased.
The silicon substrate 15 that the two sides of making is like this had recess is positioned on the interarea 11b of glass substrate 11, and implements anodic bonding and handle, make this moment have conical surface 15d recess up, the recess that does not promptly have the conical surface is relative with glass substrate 11.Anodic bonding is handled with embodiment 1 and is similarly carried out.Like this, the adhesiveness in the interface between silicon substrate 15 and the glass substrate 11 further increases, and can improve the impermeability of spatial portion 15c.
In the capacitance-type pressure sensor that obtains like this, fixed electorde is that electrode 16a is electrically connected with electrode 16b by island body 12a, 12b, and movable electrode is that pressure sensitive film 15a is electrically connected with electrode 17.Thereby, can obtain the variable signal of detected electrostatic capacitance between pressure sensitive film 15a and electrode 16a by island body 12a, 12b from electrode 16b.Can calculate mensuration pressure according to this signal.
Below, describe about the embodiment that carries out for clear and definite effect of the present invention.
The capacitance-type pressure sensor of the present invention shown in Fig. 1 and Fig. 8 and the impermeability of existing capacitance-type pressure sensor are checked.Specifically, capacitance-type pressure sensor shown in set-up dirgram 1 and Fig. 8 and after opening the hole on the glass substrate, in this hole, electroplate the existing capacitance-type pressure sensor imbed metal and to make, place it in respectively in the compression chamber, applied pressure inside.Check whether pressure sensitive film at this moment is movable.Its result, the pressure sensitive film of the capacitance-type pressure sensor shown in Fig. 1 and Fig. 8 is moved owing to pressurizeing, and has kept this state.Therefore, bring into play high-adhesiveness as can be known in the interface 11d of the interface 11c of glass substrate 11 and island body 12a and glass substrate 11 and silicon substrate 15, the impermeability of spatial portion 15c is good.On the other hand, after existing capacitance-type pressure sensor was pressurized, pressure sensitive film was temporarily moved and to glass substrate 11 lateral bending songs, but after very short time, pressure sensitive film is just got back to original position again.Therefore, the poor adhesion in glass substrate and the island body as can be known, the poor air-tightness of spatial portion.
In above-mentioned embodiment 1,2, after on the two sides of silicon substrate 15, having formed recess, this silicon substrate 15 is illustrated with the situation that glass substrate 11 engages, but in the present invention, also can on a side's of silicon substrate 15 surface, form recess, and silicon substrate 15 glass substrate 11 are engaged and make after this recess and the glass substrate 11 opposed formation spatial portion 15c, another surface of etch silicon substrate 15 forms diaphragm 15a.By making like this, can prevent that diaphragm bends to more than necessity because of electrostatic attraction when the anodic bonding of silicon substrate 15 and glass substrate 11.
The invention is not restricted to above-mentioned embodiment 1,2, also can carry out various changes.For example, do not carry out particular restriction, can in the scope that does not break away from purpose of the present invention, make suitable change about the numerical value and the material of explanation in the above-mentioned embodiment 1,2.
Claims (9)
1, a kind of glass substrate is characterized in that, has: the glass substrate main body with a pair of mutual opposed interarea; Be embedded in the silicon island shape body in the above-mentioned glass substrate main body, at least a portion of this silicon island shape body is exposed the both sides of above-mentioned a pair of interarea.
2, glass substrate as claimed in claim 1 is characterized in that, above-mentioned silicon island shape body utilizes the silicon layer mutual conduction on the interarea that is formed on this side in a side's of above-mentioned glass substrate main body interarea.
3, glass substrate as claimed in claim 1 is characterized in that, above-mentioned silicon island shape body has the metal level of imbedding, and this metal level is exposed at least one side's of above-mentioned glass substrate main body interarea.
4, glass substrate as claimed in claim 1 is characterized in that, has Si-Si key or Si-O key in the interface of above-mentioned glass substrate main body and above-mentioned silicon island shape body.
5, a kind of capacitance-type pressure sensor is characterized in that, has: the described glass substrate of claim 1; Electrode is arranged on the interarea that above-mentioned silicon island shape body exposed, and is electrically connected with above-mentioned silicon island shape body; Silicon substrate is arranged on the interarea that is formed with above-mentioned electrode,
Above-mentioned silicon substrate have from above-mentioned electrode predetermined distance locational, according to the pressure sensitive film of being carried out displacement by measuring pressure, detect the variation of the electrostatic capacitance between above-mentioned electrode and the above-mentioned pressure sensitive film, be used as pressure and change.
6, a kind of manufacture method of glass substrate is characterized in that, has: the operation that forms the island body on surface of silicon substrate; Under heating condition, above-mentioned island body is pressed in the glass substrate, engage the operation of above-mentioned silicon substrate and above-mentioned glass substrate; Grind the surface of above-mentioned glass substrate, the operation that above-mentioned island body is exposed from the surface of above-mentioned glass substrate.
7, the manufacture method of glass substrate as claimed in claim 6 is characterized in that, forms mask on above-mentioned surface of silicon substrate, and by using this mask that above-mentioned silicon substrate is carried out blasting treatment, forms above-mentioned island body.
8, the manufacture method of glass substrate as claimed in claim 6 is characterized in that, forms above-mentioned island body by the above-mentioned surface of silicon substrate of hemisect.
9, a kind of manufacture method of capacitance-type pressure sensor is characterized in that, comprising: utilize the described method of claim 6 to make the operation of glass substrate; On above-mentioned glass substrate, form the operation of electrode in the mode that is electrically connected with the above-mentioned island body that exposes from the surface of above-mentioned glass substrate; To have according to the silicon substrate that is carried out the pressure sensitive film of displacement by measuring pressure, so that above-mentioned pressure sensitive film is positioned at the operation that the locational mode from above-mentioned electrode predetermined distance engages with above-mentioned glass substrate.
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| JP196341/2004 | 2004-07-02 | ||
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| CN100510667C CN100510667C (en) | 2009-07-08 |
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| CN104616971A (en) * | 2013-11-05 | 2015-05-13 | 中芯国际集成电路制造(上海)有限公司 | Pressure sensor and forming method thereof |
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| CN103311118A (en) * | 2012-03-08 | 2013-09-18 | 英飞凌科技股份有限公司 | Semiconductor device, wafer assembly and methods of manufacturing wafer assemblies and semiconductor devices |
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| US9219020B2 (en) | 2012-03-08 | 2015-12-22 | Infineon Technologies Ag | Semiconductor device, wafer assembly and methods of manufacturing wafer assemblies and semiconductor devices |
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