CN1715152A - Stocker for semiconductor substrates, storage method therefor and fabrication method for semiconductor device using the stocker - Google Patents
Stocker for semiconductor substrates, storage method therefor and fabrication method for semiconductor device using the stocker Download PDFInfo
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- CN1715152A CN1715152A CNA200510076482XA CN200510076482A CN1715152A CN 1715152 A CN1715152 A CN 1715152A CN A200510076482X A CNA200510076482X A CN A200510076482XA CN 200510076482 A CN200510076482 A CN 200510076482A CN 1715152 A CN1715152 A CN 1715152A
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- semiconductor substrate
- accommodating container
- gas
- storehouse
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 148
- 239000000758 substrate Substances 0.000 title claims abstract description 118
- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000003860 storage Methods 0.000 title description 2
- 238000004321 preservation Methods 0.000 claims abstract description 57
- 239000007789 gas Substances 0.000 claims description 107
- 239000002245 particle Substances 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 239000000126 substance Substances 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 239000004615 ingredient Substances 0.000 claims description 7
- 230000002950 deficient Effects 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 238000011084 recovery Methods 0.000 claims description 5
- 239000003570 air Substances 0.000 claims description 4
- 238000005273 aeration Methods 0.000 claims description 3
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 238000007689 inspection Methods 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- GQWNECFJGBQMBO-UHFFFAOYSA-N Molindone hydrochloride Chemical compound Cl.O=C1C=2C(CC)=C(C)NC=2CCC1CN1CCOCC1 GQWNECFJGBQMBO-UHFFFAOYSA-N 0.000 claims 1
- 238000012423 maintenance Methods 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 16
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000006837 decompression Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 235000014347 soups Nutrition 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67769—Storage means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to a semiconductor substrate preservation storehouse, a preservation method and a manufacture method for the semiconductor substrate which relate to preserve the semiconductor substrate under the situation of not leading the structure of an accepting container to be complex and under a cleaning environment to realize a simple and consentient preservation storehouse with the advantage of low cost and high reliability, a preserving method and a manufacture method for a semiconductor device. The preservation storehouse (14) include an empty hole part (107) and a channel part (120). After tightly connecting a channel department (106) of the channel part (12) and a cover body (102) of the accepting container (101), the outside air can be led to not enter into the accepting container (101) to lead the empty hole part (107) to be communicated with the accepting container (101) through taking the cover body (102) off from the accepting container (101).
Description
Technical field
The present invention relates to a kind ofly in clean environment, preserve the preservation storehouse be accommodated in the semiconductor substrate in the accommodating container, preservation method and with its manufacturing semiconductor substrate, method.
Background technology
The development of the Fabrication procedure of semiconductor device is accompanied by the increase of process and the minimizing development of operation machinery according to the rule of operation.Have, because the processing capacity of various manufacturing equipments exists difference, the semiconductor substrate that has taken place to form in the semiconductor device is detained by the wait of the device processes of next process again.Usually, the semiconductor substrate in the delay in order to prevent adhering to of particle or chemical substance, on the basis of putting into clean container, to be saved in and to be called the preservation storehouse of cleaning storage vault.
Now, because the progress that becomes more meticulous of the manufacturing process of semiconductor device, can touch the environment of semiconductor substrate, than requiring higher spatter property in the past, accommodating container from the carrying case of opening become the SEMI standard as being called leakproofness and the good container of spatter property of BOUP (Bottom Opening Unified Pod) or FOUP (FrontOpening Unified Pod).
But, in meticulous operation in recent years,, keep sufficient spatter property further seeking to require higher spatter property, suppress the method for the formation of natural oxide film.As such method, for providing mouthful and discharge orifice with being provided with on the inherent accommodating container of inert gas replacement accommodating container, with the method for a certain amount of unreactable gas decompression cycle in accommodating container be known to (with reference to patent document 1).
Fig. 7 is the skeleton diagram of expression with the preservation storehouse of the related semiconductor substrate of precedent.As shown in Figure 7, be provided with gas in the bottom surface of closed container and attract mouth 302, on the shop front, be provided with the accommodating container 300 of gas inflow entrance 306, be fixed in the platform portion 441 that is arranged in the preservation storehouse 400.
Be provided with gas attractor 442 in the platform portion 441, the gas in gas attractor 442 and the accommodating container 300 attracts mouthfuls 302 to be connected.Also have, the inside of preserving storehouse 400 has been full of the nitrogen (N of cleaning
2).
Under this state, attracting mouth 302 to attract accommodating container 300 interior gases to make in the accommodating container 300 by force from gas becomes low pressure, like this, because flow into the nitrogen that cleans from 306 casees accommodating containers of gas inflow entrance 300, just can be in the accommodating container 300 by nitrogen replacement.
Also have, by keeping the low pressure of accommodating container 300, the nitrogen in the accommodating container 300 is in the replacing state, just can keep clean environment.
(patent documentation 1) spy opens 2003-92345 communique (Japan)
(inventing problem to be solved)
Yet, be necessary often to keep the low pressure of accommodating container in the above-mentioned former preservation storehouse, be provided with on accommodating container that gas attracts mouthful and inflow entrance, also the gas displacer must be set in the platform portion that preserves the storehouse.For this reason, the quantity of constructing the increase part that complicates has strengthened fault rate and cost, and this just becomes problem.Also have, the accommodating container of complicated shape is cleaned also difficulty, occurs the residual part of soup when clean, occurs the problem of soup or moisture entrapment when dry.Have, carry out thousands of time container mountings and lid/take off action, gas attracts mouthful and gas discharge outlet will produce distortion, will occur preserving storehouse platform portion mounting container and make the reliability of container so fatal problem that goes wrong successfully.
Also have,,, produce irregular air-flow in the lifetime of accommodating container and the accommodating container this class problem of particulate will take place so meeting produces very big fatigue on accommodating container by keeping decompression state in the accommodating container.
Summary of the invention
The objective of the invention is to solve the problem before above-mentioned, preserving under clean environment under the situation of the complex structure that does not make accommodating container that semiconductor substrate is realized the high preservation storehouse of easy low-cost reliability, keeping method and with its manufacture method of semiconductor device.
(solving the method for problem)
For reaching above-mentioned purpose, of the present invention constitute to make preserve the preservation storehouse that is accommodated in the semiconductor substrate in the accommodating container, open face is replaced the gas in the accommodating container when being arranged on the turnover of the semiconductor substrate on the accommodating container.
Specifically, semiconductor substrate involved in the present invention is preserved the storehouse, be to be accommodated in inside with the semiconductor substrate that will form semiconductor device, with by be arranged to the closed container of open surface with a face and open surface is airtight and and the accommodating container that forms of the lid that can cover/the take off preservation storehouse of preserving semiconductor substrate that combines be object, has the environment control part, its comprise by the circulation clean air of portion within it make its pressure inside be kept above the blank part of exterior pressure with gas is provided to blank part gas portion is provided, and channel part, it is connected blank part for not making ambient atmos invade accommodating container inside with accommodating container; In addition, channel part, the passage department that one side with relative accommodating container lid and accommodating container are combined closely, the cover cap that covers/take off the accommodating container lid/the take off device of combining closely with passage department, by cover cap/take off device to open lid, by making being connected of blank part and accommodating container, making the inside of the inside of accommodating container and blank part have same environment is feature.
Preserve the storehouse according to semiconductor substrate of the present invention, because possess the channel part that under the state of preserving leak-tight joint accommodating container on the storehouse, can open the lid of accommodating container, and can carry out gas replacement in the accommodating container between the open surface of accommodating container, so, there is no need on the channel part in accommodating container and preservation storehouse, the suction and discharge mechanism of complicated gas replacement with complexity to be set.Therefore, simplified accommodating container and preserved the structure in storehouse, so when can reduce fault rate and cost, the clean of accommodating container becomes easy.Having, is the gas replacement of carrying out under barotropic state in the accommodating container again, just can reduce the fatigue of accommodating container, can prolong the service life of accommodating container.Its result realizes that the preservation Kucheng of low-cost and high reliability is possible.
Preserve in the storehouse pressure of blank part, more than 1.5 times below 3.0 times of external pressure that best is at semiconductor substrate of the present invention.By such formation, can replace the gas in the accommodating container really.
Preserve in the storehouse at semiconductor substrate of the present invention, be full of the gas of blank part, best is aqueous ingredients below 2% and particle diameter at the gas below 3 in per 0.028 cubic meter of the corpuscle foreign matter more than the 0.12 μ m.By such formation, preserving semiconductor substrate in clean environment becomes possibility, can be controlled at the generation of lip-deep natural oxide film and the adhering to of particle of semiconductor substrate.
Preserve in the storehouse at semiconductor substrate of the present invention, be full of the gas of blank part, best is nitrogen, argon gas, helium or air.By using such gas, can preserve semiconductor substrate really.
Semiconductor substrate of the present invention is preserved in the storehouse, and best is also is included as the moisture concentration (humidity) of gas is reduced to the moisture device of removing below 2%.By such formation, can reduce blank part in-to-in aqueous ingredients really.
Also have, gas portion is provided, best is has the particle of removing particle by filtering gas at least and removes filter and remove in the chemical filter of chemical substance one.By such formation, can provide the gas of cleaning really.
Semiconductor substrate of the present invention is preserved the storehouse, and best is also to comprise the recovery gas line of recovery from the gas of blank part discharge, provides gas portion by being turned back to by the gas that reclaims the gas line recovery, makes from the gas circulation that provides gas portion to provide and uses.By such formation, can reduce the gas use amount.
Semiconductor substrate of the present invention is preserved the storehouse, best is also comprises the sensor of measuring concentration a kind of in blank part in-to-in moisture, organic chemistry composition or the inorganic chemistry composition at least and when the value of sensor determination surpasses the value of defined, the flow control portion that increases gas flow in the blank part.By such formation, can prevent the pollution of semiconductor substrate really.
Semiconductor substrate of the present invention is preserved the storehouse, and best is also to comprise: the inspection defective device of checking the semiconductor substrate surface defective; Take out the semiconductor substrate of taking in the accommodating container, be transplanted on the semiconductor substrate conveyer of checking the defective device.By such formation, when can carrying out the preservation state check, the inspection in the time of can also preserving can be shortened the turn round time in the quartz conductor Fabrication procedure.
Preserve in the storehouse at semiconductor substrate, best is channel part, also has to connect the telescopic biography platform that connects that passes outside and accommodating container.The handover of accommodating container becomes easy thus.
Semiconductor substrate of the present invention is preserved the storehouse, and best is also to comprise: the keeping cover body part of the lid that keeping is taken off from accommodating container by cover cap/take off device and the lid Handling device that the lid taken off is transferred to cover cap/take off device and keeping cover body part.
In this case, best is to comprise plurality of channels portion.Can reduce the space of occupying in the clean room thus.
Have, when closed container was taken off, best was the identification part that also comprises the combination of identification cap body and closed container, and the lid of taking off is covered back former sealing container again with lid again.By doing like this, can lid be turned back on the former sealing container really.
Semiconductor substrate of the present invention is preserved in the storehouse, and best is that accommodating container is the front open type volumetric standard.
Semiconductor substrate store method of the present invention, comprising by make pressure inside keep pressing in the preservation storehouse of high blank part at the internal circulation clean air than atmosphere outside, the semiconductor substrate that forms semiconductor device is received into inside, with by be arranged to the closed container of open surface with a face and open surface is airtight and and the accommodating container that forms of the lid that can cover/take off combine, ambient atmos is not invaded under the accommodating container in-to-in state, by open lid, blank part is connected with accommodating container, and preserving semiconductor substrate by the state that makes the displacement of blank part and accommodating container aerification is feature.
According to semiconductor substrate store method of the present invention, comprising by make pressure inside keep pressing in the preservation storehouse of high blank part at the internal circulation clean air than atmosphere outside, connect accommodating container, do not invade under the accommodating container in-to-in state by open lid at ambient atmos, blank part is connected with accommodating container makes the state of blank part and the displacement of accommodating container aerification preserve semiconductor substrate down, for this reason, there is no need on the channel part in accommodating container and preservation storehouse, the suction and discharge mechanism of complicated gas replacement with complexity to be set.Therefore, simplified accommodating container and preserved the structure in storehouse, so when can reduce fault rate and cost, the clean of accommodating container becomes easy.Having, is the gas replacement of carrying out under barotropic state in the accommodating container again, just can reduce the fatigue of accommodating container, can prolong the service life of accommodating container.Its result realizes that the preservation Kucheng of low-cost and high reliability is possible.
In semiconductor substrate store method of the present invention, the pressure of blank part, more than 1.5 times below 3.0 times of external pressure that best is.By such formation, can replace the gas in the accommodating container really.
In semiconductor substrate store method of the present invention, the inside of blank part, best is aqueous ingredients below 2% and particle diameter at the gas below 3 in per 0.028 cubic meter of the corpuscle foreign matter more than the 0.12 μ m.By such formation, can prevent adhering to of particle on the surface of semiconductor substrate.
In semiconductor substrate store method of the present invention, the blank part gas inside, best is nitrogen, argon gas, helium or air.Can preserve semiconductor substrate by using to do so really.
Semiconductor substrate store method of the present invention, best is to recycle by providing the gas gas that portion provides to return blank part from the gas that blank part is discharged.By such formation, can reduce the gas use amount.
Semiconductor substrate store method of the present invention, best is with the sensor determination of measuring concentration any at least in blank part in-to-in moisture, organic chemistry composition or the inorganic chemistry composition, when the value of sensor determination surpasses the value of defined, increase gas flow in the blank part.By such formation, can keep blank part inside and accommodating container in-to-in cleaning really.
Semiconductor substrate store method of the present invention, best is also between being arranged on blank part, the passage department that accommodating container with the relative leak-tight joint of the lid of accommodating container one side, leak-tight joint the cover cap that taking off of passage department cover the accommodating container lid/take off the channel part of device, connects blank part and accommodating container.By doing like this, can prevent ambient atmos intrusion accommodating container really.
Semiconductor substrate store method of the present invention, best is with the sensor determination of measuring concentration any at least in blank part in-to-in moisture, organic chemistry composition or the inorganic chemistry composition, when the value of sensor determination surpasses the value of defined, increase gas flow in the blank part.By such formation, can keep blank part inside and accommodating container in-to-in cleaning really.
Manufacturing method for semiconductor device of the present invention, be with comprise by a plurality of treatment process that form semiconductor device on the semiconductor substrate and be arranged on a plurality of treatment process between any the manufacturing method for semiconductor device that forms of preservation operation be object, the keeping operation, take in semiconductor substrate in inside, use a face to be arranged to the closed container of open surface and open surface is airtight and and the accommodating container that forms together of the lid that can cover/take off combine and preserve the preservation storehouse of semiconductor substrate, preserve the storehouse, comprise: within it portion circulation aqueous ingredients below 2% and particle diameter at the gas below 3 in per 0.028 cubic meter of the corpuscle foreign matter more than the 0.12 μ m, thus, make pressure inside keep the malleation blank part below 3.0 times more than 1.5 times of external pressure; Make ambient atmos not invade accommodating container inside with blank part and accommodating container bonded assembly channel part; Channel part, the passage department that one side with relative accommodating container lid and accommodating container are combined closely, the cover cap that covers/take off the accommodating container lid/the take off device of combining closely with passage department, by cover cap/take off device to open lid, by making being connected of blank part and accommodating container, making the inside of the inside of accommodating container and blank part have same environment is feature.
According to manufacturing method for semiconductor device of the present invention, be arranged in the preservation operation of the operation semiconductor substrate midway between the treatment process in preservation, semiconductor substrate can be kept in the preservation storehouse of clean conditions really, so, the pollution of the semiconductor substrate between the treatment process can be prevented, the yield rate in the semiconductor substrate manufacturing operation can be improved.
The effect of-invention-
According to the manufacture method that semiconductor substrate of the present invention is preserved storehouse, store method and its semiconductor device of use thereof, the structure that does not need complicated accommodating container can be kept at high preservation storehouse and the store method thereof of easy to be low-cost reliability under the cleaning ambient with semiconductor substrate.Have again, can in clean environment, preserve really, so can realize the manufacture method of the semiconductor device that yield rate is high.
Description of drawings
Fig. 1 is the skeleton diagram in the preservation storehouse of the related semiconductor substrate of expression one embodiment of the present invention.
Fig. 2 is to have preserved the pressure in the blank part and the relation curve of foreign matter adhesive rate under the situation of semiconductor wafer in the preservation storehouse of the related semiconductor substrate of expression one embodiment of the present invention.
Fig. 3 is to have preserved the foreign matter quantity in the blank part and the relation curve of foreign matter adhesive rate under the situation of semiconductor wafer in the preservation storehouse of the related semiconductor substrate of expression one embodiment of the present invention.
Fig. 4 is to have preserved the moisture concentration in the blank part and the relation curve of foreign matter adhesive rate under the situation of semiconductor wafer in the preservation storehouse of the related semiconductor substrate of expression one embodiment of the present invention.
Fig. 5 is other routine skeleton diagrams in the preservation storehouse of the related semiconductor substrate of expression one embodiment of the present invention.
Fig. 6 is the block diagram of state in the preservation storehouse of the related semiconductor substrate of expression combination one embodiment of the present invention.
Fig. 7 is the skeleton diagram of expression with the preservation storehouse of the related semiconductor substrate of precedent.
(nomenclature)
100 semiconductor substrates
101 accommodating containers
102 lids
103 closed containers
104 preserve the storehouse
105 brace tables
106 passage departments
107 blank parts
108 lid Handling devices
109 provide gas line
110 provide gas trap
111 remove moisture device
112 chemical filters
113 particle filters
114 blows off valve
115 exhaust lines
116 gas blending bins
117 measure water segregator
120 channel parts
121 cover caps/take off device
122 environment control parts
123 connect the biography platform
124 reclaim gas line
The specific embodiment
(embodiment)
With reference to description of drawings an embodiment of the invention.
Fig. 1 is the skeleton diagram in the preservation storehouse of the related semiconductor substrate of expression one embodiment of the present invention.As shown in Figure 1, preserving storehouse 104 is to be made of environment control part 122 and the channel part 120 that is connected the inlet of the accommodating container 101 on the environment control part 122.
The closed container 103 that accommodating container 101 is an open surface by a face is combined closely with closed container 103 on open surface or chimeric lid 102 that can airtight accommodating container 101 constitutes.Also have, be provided with the wafer saddle (not shown) of nodular in the inside of accommodating container 101, a plurality of semiconductor substrates 100 can be kept certain interval horizontal support mutually up and down.
In the inside of blank part 107, be provided with the keeping cover body part (not shown) of the lid 102 that preservation taken off by cover cap/take off device 121 in the bottom, be shifted into the keeping cover body part by lid Handling device 108 lids 102 and take in.Also have, be provided with the sensor (not shown) of measuring moisture concentration and chemical analysis concentration in blank part 107 inside.
And preservation storehouse 104 channel parts 120 of present embodiment are vertically disposing four, are the spaces of occupying that can dwindle in clean room.
Below, the method for preserving semiconductor substrate by the explanation of the preservation storehouse of present embodiment.In preserving the blank part 107 in storehouse 104, be that 9.999% exposure station is at the high-purity nitrogen (P-N below-90 by providing gas line 109 that purity is provided
2).Also have, remove moisture device 111 providing to be provided with on the gas line 109, chemical filter 112 and particle filter 113, also have, further reduce blank part 107 in-to-in moisture concentrations, the concentration of chemical substance and environment foreign matter number, moisture concentration be below 2%, the foreign matter 3/0.28m of particle diameter more than 0.12 μ m
3Below (one cube of feet).
Also have, provide gas trap 110 and blow off valve 114 pressure in the blank part 107 to be set at atmospheric 1.5 times～3 times that preserve the clean room that is provided with in the storehouse by adjustment.Thus, ambient atmos can not enter and suppress the environment foreign matter in the blank part 107.Have again,, under the situation that connects moisture concentration value of being above standard when the accommodating container 101, increase the gas flow of blank part 107, just turn back to common flow when turning back to standard value by the moisture concentration in the determination of moisture sensor monitoring blank part 107.Also have, chemical analysis such as gas chromatographic analysis are measured and are arranged on blank part 107 inside with sensor, and when determining organic matter, the chemical substance of inorganic acid and alkaline gas etc. is when standard value is above, and it is possible increasing gas flow equally.
To the connection of the accommodating container 101 of preserving storehouse 104, at first, transport the accommodating container 101 that comes by Over Head Transport (OHT) system, move to connect and pass on the platform 123.It is flexible with OHT system interlock to connect biography platform 123, so accommodating container 101 is successfully transferred.Next, contraction connects and passes platform 123 to passage department 106 1 side shifting accommodating containers 101, places accommodating container 101 on brace table 105.
Next, with the face leak-tight joint of lid 102 of accommodating container 101 that moves to brace table 105 to the state of passage department 106, by cover cap/take off device 121 to take lid 102 off from closed container 103.Take the lid 102 that comes off, be received into the keeping cover body part of preserving in the storehouse 104 by lid Handling device 108.At this moment, get back to former sealing container 103, be provided with bar code and reading device for the lid of taking off 102 can be covered.
By taking lid 102 off, accommodating container 101 is connected with preservation storehouse 104, makes blank part 107 and accommodating container 101 be in connected state.Thus, in the inside of accommodating container 101, be full of the P-N of blank part 107 by the open surface of taking lid 102 off
2Gas flows into, the inside of accommodating container 101 just and blank part 107 formed same environment, just can under cleaning ambient, preserve the semiconductor substrate that is accommodated in the accommodating container.Also have, owing to make passage department 106 and accommodating container 101 leak-tight joints, blank part 107 is by being set at malleation, so ambient atmos can not invaded in the accommodating container 101.
When accommodating container 101 is taken off from preserving storehouse 104, at first, the lid 102 that is received into the keeping cover body part is turned back to channel part 120 by lid Handling device 108, by cover cap/take off device 121 to cover back closed container 103, airtight thus accommodating container 101 takes off accommodating container 101 again from preserving storehouse 104.Next, stretch out to connect and pass platform 123 accommodating container 101 is moved to the OHT system.
The actual following expression of result of having preserved the situation of semiconductor substrate in preserving the storehouse as previously discussed.
Fig. 2 is to have preserved the pressure in the blank part and the relation curve of foreign matter adhesive rate under the situation of semiconductor wafer in the preservation storehouse of the related semiconductor substrate of expression one embodiment of the present invention.Transverse axis among Fig. 2 represents that pressure (MPa) longitudinal axis in the blank part 107 represent to be attached to the adhesive rate (%) of the foreign matter on the semiconductor substrate.
When measuring, adjust particle filter 113 and chemical filter 112 and make the clean-up performance of blank part 107 reach certain.Also have,, be accommodated in the orlop of accommodating container 101 as 12 centimetres of wafers that semiconductor substrate uses common RCA to clean.Also have, accommodating container 101 is connected the orlop channel part of preserving storehouse 104.
The foreign matter adhesive rate is wafer to be preserved measured foreign matter number more than the wafer surface particle diameter 0.12 μ m before and after preserving with laser formula flaw detection apparatus at random in three hours, and its increment rate is obtained by following formula (1):
Foreign matter number before foreign matter adhesive rate=(preserving the preceding foreign matter number of back foreign matter number-keeping)/keeping ... (1)
Also have, the pressure gauge of the filter house of going into by group in accommodating container 101 when the mensuration has been measured the pressure in the accommodating container 101, still, and the pressure basically identical in pressure in the blank part 107 and the accommodating container 101.
The interior pressure that increases blank part 107 as shown in Figure 2 is attached to the just minimizing of foreign matter of wafer.This is because by increasing the interior pressure of blank part 107, is preventing the exterior allotrylic while, also the gas replacement efficient in the accommodating container 101 is increased.But, if rising pressure on the contrary the foreign matter adhesive rate can rise again.This is because cause accommodating container 101 interior sinuous flow, the results that foreign matter is rolled-up of taking place because the pressure in the blank part 107 rises.
Therefore, blank part 107 in to be pressed in 0.15MPa～0.3MPa scope suitable.This range of pressure is atmospheric 1.5～3 times scope that the clean room of preserving storehouse 104 is set.
Fig. 3 is the relation that the foreign matter number in making blank part 107 is represented the foreign matter adhesive rate of semiconductor wafer surface when changing.And the pressure when measuring in the blank part 107 is 0.2Mpa, and the holding time is three hours.Also have, the ten pieces of wafers in the inside of accommodating container 101 are kept at in one deck, and their each above foreign matters of particle diameter 0.12 μ m of preserving front and back adhere to number to be measured by laser formula flaw detection apparatus at random, obtains the average foreign matter adhesive rate of ten pieces of wafers.
As shown in Figure 3, with respect to the 3/0.028m of foreign matter more than the particle diameter 0.12 μ m
3Environment when preserving wafer foreign matter do not adhere to 10/0.028m substantially
3Environment when preserving wafer the foreign matter of wafer surface increase by 30%.Therefore, best is that blank part 107 interior foreign matters are 3/0.028m
3Below.
Fig. 4 has represented moisture concentrations in the blank part 107 and has been accommodated in semiconductor wafer surfaces in the accommodating container 101 to generate relation between the thickness of natural oxide film.And transverse axis is represented moisture concentration (%) in Fig. 4, and the longitudinal axis is represented natural oxide film thickness (nm).
In the mensuration, carried out after common RCA cleans, carried out handling 12 centimetres of silicon wafers removing surface film oxide in three minutes with rare fluoric acid of 1% again, carry out preservation in five hours after, measure the thickness of natural oxide film again by analysis of polarized light mensuration mode.Also have, moisture concentration is measured by being arranged near passage department 106 wireless hydro-testers.
As shown in Figure 4, be accompanied by the thickness thickening that wafer surface generates natural oxide film that is increased in of moisture concentration.In semiconductor device Fabrication procedure, the thickness of the natural oxide film of wafer surface wishes it is below a 0.4nm below the atomic layer, thus best be that moisture concentration in the blank part 107 is below 2%.
The preservation storehouse of present embodiment, the gas that is provided is discharged and is constituted from exhaust line 115 with 1 handkerchief.But best when using high price gas is to suppress the gas use amount.In this situation, be provided with gas blending bin 116 as shown in Figure 5, the gas of discharging from blow off valve 114 reclaims by reclaiming gas line 124 again, and the gas that imports from suction line 109 in the gas blending bin 116 mixes the anti-formation that flows back to blank part 107 also can.Can cut down gas usage in a large number by such cycle mode.Also have, in such formation, remove moisture device 111 by use, chemical filter 112 and particle filter 113 etc. may keep the cleanliness level in the blank part 107.
Also have, in the blank part 107,, can check the semiconductor substrate surface state of preservation by comprising with the transfer mechanism and the optical imagery comparison expression flaw detection apparatus of semiconductor substrate from the open surface taking-up.So just bad semiconductor substrate can be discharged, the preservation storehouse that reliability is higher can be realized.Also have, the processing latency that can effectively utilize semiconductor substrate can shorten the turn round time (TAT) in the Fabrication procedure of semiconductor substrate.
Have, the preservation storehouse by plural groups combination present embodiment shown in Figure 6 can increase the preservation capacity again, and more effective preservation becomes possibility.
Also have, used in the present embodiment to blank part 107 and imported highly purified nitrogen, still, replace nitrogen and use inertness gas such as argon gas or helium and dry air also can.
As described above, the preservation storehouse of present embodiment does not need to be provided with special mechanism in accommodating container, and preserving semiconductor wafer at clean environment becomes possibility.
In the present embodiment, used the FOUP of front open type as accepting container, be limited to this but have more than, the BOUP of drop-bottom also can obtain same effect.
In the Fabrication procedure of semiconductor device, semiconductor substrate is preserved in preservation storehouse by present embodiment in the preservation operation of waiting for the interval that next process is handled, the pollution of semiconductor substrate and generation natural oxide film in the time of can preventing to preserve, so, the Fabrication procedure that can realize the semiconductor device that yield rate is high.Also have, it is effective especially particularly to preserve semiconductor substrate in the gate insulating film formation operation of the formation of disliking and avoiding natural oxide film.
The possibility of utilizing on-the industry-
Semiconductor substrate of the present invention is preserved the storehouse, store method and with its manufacturing method for semiconductor device, Do not need the structure of complicated accommodating container under clean environment, to preserve semiconductor substrate, can be real In the time of the preservation storehouse of the existing high reliability of easy low cost and store method, can also realize the yield rate height The manufacture method of semiconductor device, thus, semiconductor substrate of the present invention is preserved storehouse, store method The manufacturing method for semiconductor device that reaches with it is useful.
Claims (22)
1. a semiconductor substrate is preserved the storehouse, it is characterized by:
Above-mentioned semiconductor substrate is preserved the storehouse, be that the semiconductor substrate that will form semiconductor device is accommodated in inside, with the closed container by being arranged to open surface with a face and make open surface airtight and and the accommodating container that forms of the lid that can cover/the take off preservation semiconductor substrate that combines, comprising:
The environment control part has to comprise by the circulation clean air of portion within it and makes its pressure inside be kept above the blank part of exterior pressure and provide gas portion to what blank part provided gas;
Channel part, it is inner and above-mentioned blank part is connected with above-mentioned accommodating container to make ambient atmos not invade above-mentioned accommodating container; And
Above-mentioned channel part, the cover cap that covers/take off above-mentioned accommodating container lid that has a face of above-mentioned relatively accommodating container lid and passage department that above-mentioned accommodating container is combined closely and combine closely/take off device, in addition with above-mentioned passage department
By above-mentioned cover cap/take off device to open above-mentioned lid,, make the inside of above-mentioned accommodating container and the inside of above-mentioned blank part have same gaseous environment by making being connected of above-mentioned blank part and above-mentioned accommodating container.
2. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:
The pressure of above-mentioned blank part is more than 1.5 times below 3.0 times of external pressure.
3. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:
Above-mentioned gas is an aqueous ingredients below 2% and particle diameter at the gas below 3 in per 0.028 cubic meter of the corpuscle foreign matter more than the 0.12 μ m.
4. semiconductor substrate according to claim 3 is preserved the storehouse, it is characterized by:
Above-mentioned gas is nitrogen, argon gas, helium or air.
5. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:
The above-mentioned gas portion that provides also is included as the moisture concentration of above-mentioned gas is reduced to the moisture device of removing below 2%.
6. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:
The above-mentioned gas portion that provides has the particle of removing particle by filtering gas at least and removes filter and remove in the chemical filter of chemical substance one.
7. preserve the storehouse according to claim 5 or 6 described semiconductor substrates, it is characterized by:
Also comprise the recovery gas line, reclaim the gas of discharging, turn back to the above-mentioned gas portion that provides, make from the above-mentioned gas circulation that provides gas portion to provide and use by the gas that reclaims by above-mentioned recovery gas line from above-mentioned blank part.
8. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:
Also comprise flow control portion, at least a kind of sensor of concentration and when the measured value of the sensor during above the value of defined in measuring above-mentioned blank part in-to-in moisture, organic chemistry composition or inorganic chemistry composition increases gas flow in the above-mentioned blank part.
9. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:
Also comprise:
Check the defective device, check the defective of above-mentioned semiconductor substrate surface;
The semiconductor substrate conveyer takes out the semiconductor substrate of taking in the above-mentioned accommodating container, is transplanted on above-mentioned inspection defective device.
10. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:
Above-mentioned channel part also has the telescopic biography platform that connects that connects biography outside and above-mentioned accommodating container.
11. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:
Also comprise:
Keeping cover body part, keeping be by above-mentioned cover cap/the take off above-mentioned lid that device is taken off from above-mentioned accommodating container,
The lid Handling device, with the above-mentioned lid taken off to above-mentioned cover cap/take off device and above-mentioned keeping cover body part is transferred.
12. semiconductor substrate according to claim 11 is preserved the storehouse, it is characterized by:
Comprise plurality of channels portion.
13. semiconductor substrate according to claim 12 is preserved the storehouse, it is characterized by:
Also comprise the identification part, when with above-mentioned lid when above-mentioned closed container is taken off, discern the combination of above-mentioned lid and above-mentioned closed container, the above-mentioned lid of taking off can be covered back above-mentioned closed container again.
14. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:
Above-mentioned accommodating container is the front open type volumetric standard.
15. a semiconductor substrate store method is characterized by:
In comprising by the preservation storehouse that makes the pressure inside maintenance blank part higher at the internal circulation clean air than the atmosphere outside pressure,
The semiconductor substrate that forms semiconductor device is received into inside, with by be arranged to the closed container of open surface with a face and above-mentioned open surface is airtight and and the accommodating container that forms of the lid that can cover/take off combine,
Ambient atmos is not invaded under the above-mentioned accommodating container in-to-in state,, above-mentioned blank part is connected with above-mentioned accommodating container by open above-mentioned lid,
Make above-mentioned blank part and above-mentioned accommodating container under the state of aerification displacement, preserve above-mentioned semiconductor substrate.
16. semiconductor substrate store method according to claim 15 is characterized by:
The pressure of above-mentioned blank part is more than 1.5 times below 3.0 times of external pressure.
17. semiconductor substrate store method according to claim 15 is characterized by:
The inside of above-mentioned blank part, be full of aqueous ingredients below 2% and particle diameter at the gas below 3 in per 0.028 cubic meter of the corpuscle foreign matter more than the 0.12 μ m.
18. semiconductor substrate store method according to claim 17 is characterized by:
Above-mentioned gas is nitrogen, argon gas, helium or air.
19. semiconductor substrate store method according to claim 17 is characterized by:
By returning above-mentioned blank part it is recycled from the gas that above-mentioned blank part is discharged.
20. semiconductor substrate store method according to claim 15 is characterized by:
Above-mentioned blank part is connected by channel part with above-mentioned accommodating container,
Above-mentioned channel part comprises:
Passage department is arranged on above-mentioned blank part, and leak-tight joint relative with the lid one side of above-mentioned accommodating container above-mentioned accommodating container,
Cover cap/take off device, leak-tight joint above-mentioned channel part door closure/the take off lid of above-mentioned accommodating container.
21. semiconductor substrate store method according to claim 15 is characterized by:
With any at least concentration in the above-mentioned blank part in-to-in of sensor determination moisture, organic chemistry composition or the inorganic chemistry composition,
When the said determination result surpasses the value of defined, increase the gas flow that offers above-mentioned blank part.
22. a manufacturing method for semiconductor device is by in a plurality of treatment process that form semiconductor device on the semiconductor substrate be arranged on the preservation operation of above-mentioned a plurality of treatment process between any and form, and it is characterized by:
Above-mentioned keeping operation is used and is preserved the storehouse, and above-mentioned semiconductor substrate is taken in inside, above-mentioned preservation storehouse, uses a face to be arranged to the closed container of open surface and open surface is airtight and with accommodating container that the lid that can cover/take off forms the together preservation semiconductor substrate that combines,
Above-mentioned preservation storehouse comprises:
The environment control part, comprise blank part, by the circulation aqueous ingredients of portion within it below 2% and particle diameter at the gas below 3 in per 0.028 cubic meter of the environment foreign matter number more than the 0.12 μ m, make its pressure inside remain the malleation below 3.0 times more than 1.5 times of external pressure, with gas portion is provided, having to above-mentioned blank part provides gas;
Channel part, it is inner and above-mentioned blank part is connected with above-mentioned accommodating container not make ambient atmos invade above-mentioned accommodating container; And
The passage department that above-mentioned channel part, the one side with above-mentioned relatively accommodating container lid and above-mentioned accommodating container are combined closely and the cover cap that covers/take off the accommodating container lid of combining closely with above-mentioned passage department/take off device, in addition
By cover cap/take off device to take lid off,, make that above-mentioned accommodating container is inner to have same gaseous environment with above-mentioned blank part inside by making the connection of above-mentioned blank part and above-mentioned accommodating container.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004175006A JP2005353940A (en) | 2004-06-14 | 2004-06-14 | Storage for semiconductor substrate, storage method, and method for manufacturing semiconductor substrate using the same |
| JP2004175006 | 2004-06-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1715152A true CN1715152A (en) | 2006-01-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200510076482XA Pending CN1715152A (en) | 2004-06-14 | 2005-06-14 | Stocker for semiconductor substrates, storage method therefor and fabrication method for semiconductor device using the stocker |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20050274430A1 (en) |
| JP (1) | JP2005353940A (en) |
| KR (1) | KR20060048151A (en) |
| CN (1) | CN1715152A (en) |
| TW (1) | TW200602243A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103171843A (en) * | 2011-12-26 | 2013-06-26 | 株式会社大福 | Goods storage equipment and goods storage method |
| CN104249896A (en) * | 2013-06-26 | 2014-12-31 | 株式会社大福 | Storage facility and storage method |
| CN107804638A (en) * | 2016-09-09 | 2018-03-16 | 株式会社大福 | Article container equipment |
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| CN101395697A (en) * | 2006-02-13 | 2009-03-25 | 凸版光掩膜公司 | Apparatus and method for preventing haze growth on a surface of a substrate |
| WO2007149513A2 (en) * | 2006-06-19 | 2007-12-27 | Entegris, Inc. | System for purging reticle storage |
| KR101409841B1 (en) * | 2008-01-11 | 2014-06-19 | 삼성전자주식회사 | Equipment for coating photo-resister spinner and loading/unloading method of wafer carrier at the same |
| JP6106501B2 (en) * | 2013-04-12 | 2017-04-05 | 東京エレクトロン株式会社 | How to manage the atmosphere in the storage container |
| JP6476617B2 (en) * | 2014-07-04 | 2019-03-06 | 株式会社Sumco | Method for evaluating organic contamination on semiconductor substrate surface and use thereof |
| US9550219B2 (en) * | 2014-12-29 | 2017-01-24 | Daifuku Co., Ltd. | Apparatus of inhalation type for stocking wafer at ceiling and inhaling type wafer stocking system having the same |
| US10840121B2 (en) * | 2016-10-31 | 2020-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for unpacking semiconductor wafer container |
| KR102098791B1 (en) * | 2018-08-21 | 2020-04-08 | 세메스 주식회사 | Stocker |
| KR102175089B1 (en) * | 2018-08-23 | 2020-11-06 | 세메스 주식회사 | Buffer unit, Apparatus and Method for treating substrate with the unit |
| KR20230163527A (en) * | 2021-03-29 | 2023-11-30 | 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 | Processes and Applications for Catalyst-Influenced Chemical Etching |
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| JPH11168135A (en) * | 1997-12-03 | 1999-06-22 | Toshiba Corp | Substrate storing equipment and substrate storage method |
| US6467626B1 (en) * | 1999-07-28 | 2002-10-22 | Shin-Etsu Handotai Co, Ltd. | Wafer storing method and storing container therefor and wafer transferring method for transferring wafer to the storing container |
| JP4413376B2 (en) * | 2000-05-29 | 2010-02-10 | 全協化成工業株式会社 | Wafer storage device |
| JP2003007799A (en) * | 2001-06-21 | 2003-01-10 | Tokyo Electron Ltd | Treating system |
| JP4255222B2 (en) * | 2001-06-22 | 2009-04-15 | 株式会社日立国際電気 | Substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method |
| JP2003092345A (en) * | 2001-07-13 | 2003-03-28 | Semiconductor Leading Edge Technologies Inc | Substrate container, substrate transport system, storage device and gas substituting method |
| JP3880343B2 (en) * | 2001-08-01 | 2007-02-14 | 株式会社ルネサステクノロジ | Load port, substrate processing apparatus, and atmosphere replacement method |
-
2004
- 2004-06-14 JP JP2004175006A patent/JP2005353940A/en active Pending
-
2005
- 2005-05-31 US US11/139,517 patent/US20050274430A1/en not_active Abandoned
- 2005-06-03 KR KR1020050047600A patent/KR20060048151A/en not_active Application Discontinuation
- 2005-06-14 CN CNA200510076482XA patent/CN1715152A/en active Pending
- 2005-06-14 TW TW094119711A patent/TW200602243A/en unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103171843A (en) * | 2011-12-26 | 2013-06-26 | 株式会社大福 | Goods storage equipment and goods storage method |
| CN103171843B (en) * | 2011-12-26 | 2016-06-29 | 株式会社大福 | Article storage apparatus and article keeping method |
| CN104249896A (en) * | 2013-06-26 | 2014-12-31 | 株式会社大福 | Storage facility and storage method |
| CN104249896B (en) * | 2013-06-26 | 2018-01-30 | 株式会社大福 | Safedeposit and keeping method |
| CN107804638A (en) * | 2016-09-09 | 2018-03-16 | 株式会社大福 | Article container equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060048151A (en) | 2006-05-18 |
| US20050274430A1 (en) | 2005-12-15 |
| TW200602243A (en) | 2006-01-16 |
| JP2005353940A (en) | 2005-12-22 |
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