CN1710056A - Polymer film-based miniature cell holder and preparation process - Google Patents
Polymer film-based miniature cell holder and preparation process Download PDFInfo
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- CN1710056A CN1710056A CN 200410020772 CN200410020772A CN1710056A CN 1710056 A CN1710056 A CN 1710056A CN 200410020772 CN200410020772 CN 200410020772 CN 200410020772 A CN200410020772 A CN 200410020772A CN 1710056 A CN1710056 A CN 1710056A
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- 238000002360 preparation method Methods 0.000 title claims description 12
- 229920006254 polymer film Polymers 0.000 title abstract 2
- 229920000557 Nafion® Polymers 0.000 claims abstract description 38
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000010931 gold Substances 0.000 claims abstract description 23
- 229910052737 gold Inorganic materials 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 42
- 238000005516 engineering process Methods 0.000 claims description 36
- 239000010410 layer Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 16
- 229920000642 polymer Polymers 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 239000011651 chromium Substances 0.000 claims description 12
- 229910052804 chromium Inorganic materials 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 12
- 239000010936 titanium Chemical group 0.000 claims description 12
- 229910052719 titanium Chemical group 0.000 claims description 12
- 229960001866 silicon dioxide Drugs 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 239000000725 suspension Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000003631 wet chemical etching Methods 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 239000000243 solution Substances 0.000 abstract description 12
- 238000006073 displacement reaction Methods 0.000 abstract description 5
- 229920000052 poly(p-xylylene) Polymers 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 20
- 239000007788 liquid Substances 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000002028 Biomass Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012377 drug delivery Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002608 ionic liquid Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
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Abstract
The invention provides a polymer film-based micro cell holder for cell holding, which is prepared by an MEMS (micro-electromechanical systems) process. The holder may have a multiple cantilever beam structure (similar to a paw structure). Each cantilever beam is formed into a three-layer structure of gold/NAFION/gold by using a coating process, and one end of the cantilever beam is used as a fixed end to be connected with the substrate. It can work in ordinary aqueous solution. PARYLENE C film is used as protection on the electrodes and wiring to protect the structure covered by it from the surrounding solution. Compared with the micro-actuator formed by NAFION film which is commercially used at present and micro-gripper formed by other prior art, the micro-gripper not only has small volume (the structure size is about 200 Mum multiplied by 800 Mum multiplied by 200nm), large actuating displacement (can be curled), but also has low working voltage and low power consumption.
Description
Technical field
The present invention is the novel micro clamping device that is used for cell manipulation, and is specifically a kind of based on polymer (NAFION) film minicell clamper and preparation technology.
Background technology
The micro-operation of biological entities is an important need that proposes in the current biotechnology research.The operation that biomass cells is carried out at present (as grasping and the material injection) still mainly is to utilize traditional micro pipette absorption, and cell walls is damaged because of suction is excessive easily, and micro pipette absorption can't realize the rotation of cell.Yet, the development of modern biotechnology has required to select to inject the path and realize the location of infusion (as RNA) at cell when cell injects, thereby control cell respective reaction, this with regard to pair cell micro-operation have higher requirement, must rotate cell when promptly grasping cell.The deficiency of micro pipette operation makes people be devoted to study to have the MEMS microactrator that potentiality replace, and it finally can be integrated into the system of elder generation and then easy handling with sophisticated robot technology.But existing MEMS microactrator can only be applied to very little specified range because of the limitation of power output, displacement and Working environment.The performer of various active principle such as static, piezoelectricity, heat and electromagnetism all has drawback separately, for example, and static and piezoelectric actuated displacement limited (as: bending range is at π/10 radians).Electromagnetically actuated performer requires to have a very big field drives, also be difficult at present to obtain one can be integrated little magnet that can produce very big magnetic field realize this microactrator.And thermal actuation can produce big power and deformation, but needs more high-powerly, thereby may influence envrionment temperature.The more important thing is that most of existing MEMS performer can only be operated, and are not suitable for biological micro-operation in the liquid in the exsiccant environment.Though the performer of thermal actuation can be operated in liquid environment, because thermosteresis, thereby can exert an influence to environment and operand, and need bigger power consumption.
Summary of the invention
The objective of the invention is to overcome above-mentioned the deficiencies in the prior art part, provide that voltage drives in the water of a kind of micro-operation that can be used for cell, small volume, reduce power consumption based on miniature cell clamper of polymkeric substance and preparation technology.
For achieving the above object, the technical solution used in the present invention is as follows:
Described based on the miniature cell clamper of polymkeric substance: have a plurality of socle girders, in order to realize the extracting and the clamping of cell, each socle girder is the three-decker that adds one deck polymeric films material between the two-layer golden mould material, and the one end is connected with substrate as inboardend; Between substrate and golden mould material, be provided with zone of oxidation; Described polymer is NAFION;
In addition, add silicon-dioxide and/or M layer between zone of oxidation and golden mould material, wherein M is chromium or titanium; Wherein said substrate is silicon materials; Described socle girder number 3～5 is good.
Its preparation technology:
1) adopt thermal oxidation technique, 1～2 micron the zone of oxidation of growing on silicon base is as insulation layer;
2) evaporation or sputtered aluminum, and with wet chemical etching acquisition micrographics as sacrifice layer; Thickness is 0.5～1 micron;
3) adopt the sputtering method deposited gold film as lower electrode, utilize the Lift-off suspension technology to realize the little processing of figure simultaneously; Thickness is 0.05～0.15 micron;
4) adopt coating processes to prepare the NAFION film, thickness can be 0.2～0.5 micron by the concentration decision of speed of rotation that applies and solution; NAFION solution adopts Dupont
SE-5012 can reach the purpose that improves strength of solution with the volatilization of solvent nature;
5) adopt the sputtering method deposited gold film as top electrode, utilize the wet chemical etching to carry out the little processing of figure; Thickness is 80～100 nanometers;
6) adopt the oxygen plasma etch technology, be that mask carries out micrographics processing to the NAFION film with the top electrode;
7) utilize wet chemical etching (can under the phosphoric acid room temperature condition) to remove sacrifice layer, after CriticalDryer technology obtains airborne gold/NAFION/ gold interlayer cantilever beam structures.
The improvement of clamper technology of the present invention and structure:
1. adopt electron beam evaporation (e-beam evaporation) technology deposition of silica and/or M layer (wherein M is chromium or titanium) successively before step 3), step 3) utilizes Lift-off (suspension) technology to realize the micrographics processing of zone of oxidation and chromium or titanium layer double-layer films simultaneously; Wherein the thickness of silicon dioxide layer is 0.5～1 micron, is mainly used to increase the contact surface of the inboardend of socle girder and substrate and increases its physical strength; Chromium or titanium are as the adhesion layer that improves between gold and the silicon-dioxide, and thickness is 200～500 nanometers;
2. step 6) as mask, adopts the oxygen plasma etch technology to carry out micrographics processing with photoresist material AZ5214; Deposition PARYLENEN-C film is on electrode and line thereof before step 7), and 0.4～0.6 micron, purpose is to protect the electrode of its covering and the erosion that line is avoided solution.
The invention has the advantages that:
1. the present invention adopts the NAFION material film of coating, and its thickness is less than 1 micron, makes the corresponding minicell clamper can be integrated, has advantages such as volume is little, low in energy consumption.
2. can in the liquid working environment, be used for the micro-operation of cell.In order to make electrode and respective gut avoid the erosion of solution, the specially designed PARYLENE material film of the present invention coating shields.
3. minicell clamper of the present invention need not magnetic field (only needing extra electric field to drive), and driving voltage is low, and the electric actuation displacement is big, and the socle girder free end can be 90 degree with starting position, is far longer than the microactrator of existing other technologies.In addition, power output is also big, can realize safety, reliable and flexible operation.
4. can make clamper of the present invention produce holding action by the pH value that changes solution.
5. range of application is wide.NAFION polymer performer among the present invention can be worked in liquid, it not only and to the liquid working environment does not have particular requirement, be applicable to the micro-operation of cell, also can be applicable to based on chemistry and be used for the microfluidic valve of drug delivery, and can be used as power and pH transmitter.
Description of drawings
Fig. 1 is the clamper sectional view of the embodiment of the invention 1.
Fig. 2 is the clamper process sequence diagram of the embodiment of the invention 1.
Fig. 3 is the embodiment of the invention 1 an one-piece construction schematic top plan view.
Fig. 4 is the embodiment of the invention 2 clamper sectional views.
Fig. 5 is the embodiment of the invention 3 clamper sectional views.
Fig. 6 is the embodiment of the invention 4 clamper sectional views.
Fig. 7 is the embodiment of the invention 5 clamper sectional views.
Embodiment
Shown in Fig. 1,3, basic structure of the present invention is 4 NAFION micro-cantilevers (sandwich structure of gold/NAFION/ gold is formed) that can be integrated in silicon base, be specially and between two-layer golden film 2, add the single socle girder of one deck NAFION film 3 formations, constitute the minicell clamper that can be used for the cell extracting; Wherein: the thickness of every layer of golden film 2 is: 0.1 micron, NAFION film 3 is 0.2 micron.
In order to comply with the development trend of cell micro-operation, microminiaturized NAFION performer must adopt new thin-film material (less than 1 micron).MEMS planar light carving technology is adopted in the preparation of NAFION minicell clamper.Wherein: the electrode of minicell clamper adopts sputter gold film 2, and the thermal treatment that NAFION film 3 applies is finished in the process of sputter top electrode.Adopt the oxygen plasma etch technology to realize figure processing to NAFION film 3, and with last golden film 2 electrodes of wet etching as mask.Last PARYLENE protective layer is deposited on the entire chip except that contact conductor and microactrator socle girder.The present invention can adopt the preparation of MEMS complete processing, concrete operations following (referring to Fig. 2):
1) adopts known thermal oxidation technique, 2 microns zone of oxidation 7 (SiO of growth on silicon base 4
2) as insulation layer;
2) evaporate aluminium, and obtain micrographics as sacrifice layer 8 with the known chemical wet etching; Thickness is 1 micron;
3) adopt sputtering method deposited gold film 2 as lower electrode, utilize known Lift-off suspension technology to realize the little processing of figure simultaneously; Thickness is 0.1 micron;
4) adopt coating processes to prepare NAFION film 3, thickness is by the concentration decision of speed of rotation that applies and solution, and present embodiment is 0.2 micron; Its NAFION solution is Dupont
SE-5012 can reach the purpose that improves strength of solution with the volatilization of solvent nature;
5) adopt sputtering method deposited gold film 2 as top electrode, utilize the known chemical wet etching to carry out the little processing of figure; Thickness is 100 nanometers;
6) adopt the oxygen plasma etch technology, be that mask carries out micrographics processing to NAFION film 3 with the top electrode;
7) utilize known chemical wet etching (phosphoric acid, room temperature, the adding method of phosphoric acid is a prior art) to remove sacrifice layer, after known Critical Dryer technology obtains airborne gold/NAFION/ gold interlayer cantilever beam structures.
The encapsulation of chip makes the clamper one side at liquid environment, and the voltage drive part then is isolated into dry environment, is convenient to the integrated of clamper system.
The technology of the present invention index:
Scantlings of the structure: total thickness 400 nanometers (wherein the thickness of every layer of golden film 2 is: 0.1 micron, NAFION film 3 is 0.2 micron), 200,300 microns of width, long-width ratio is 5: 1.
In water, drive operating voltage≤5V, be 5V to the maximum.
Principle of work of the present invention:
Based on the ionic conduction characteristic of NAFION, under electric field action, the ion that moves along direction of an electric field carries the portion water molecule in the film simultaneously, thereby forms the stress gradient that distributes along direction of an electric field and produce corresponding strain.NAFION polymer thin films micro clamping device has that operating voltage is low, distortion is big, need not characteristics such as special liquid Working environment, thereby is expected to be applied to the relevant a lot of occasions of cell micro-operation.The commercial thick film executor of existing NAFION is because the thickness of film big (200 microns) is not easy to realize the microminiaturization of device; And the microactrator of other materials mostly is operated in dry environment or the rich ionic liquid, and inconvenience is used for the micro-operation of cell.The present invention is novel, polymer material minicell clamper that work under low temperature and weak electric field condition, that can be applicable to cell capture and rotating operation.
In addition, change the pH value of its place liquid environment, the NAFION micro clamping device also can drive.
NAFION polymer clamper among the present invention can be worked in liquid, only needs extra electric field to drive, and has big relatively displacement and power output, can realize safety, reliable and flexible operation.
Embodiment 2
Difference from Example 1 is (referring to Fig. 4):
1) on silicon base 41 micron zone of oxidation 7 of growth as insulation layer;
2) sputtered aluminum, thickness are 0.5 micron;
3) adopt sputtering method deposited gold film 2 as lower electrode, utilize known Lift-off suspension technology to realize the little processing of figure simultaneously; Thickness is 0.5 micron;
4) NAFION film 3 thickness are 0.5 micron;
Wherein: adopt electron beam evaporation (e-beam evaporation) technology deposition of silica layer 5 and chromium (or titanium) layer 6 successively before step 3), step 3) utilizes Lift-off (suspension) technology to realize the micrographics processing of silicon-dioxide, chromium (or titanium) and lower electrode film simultaneously; Wherein silicon dioxide layer 5 is mainly used to increase the contact surface of the inboardend of socle girder and substrate and increases its physical strength, and chromium (or titanium) is as the adhesion layer that improves between gold and the silicon-dioxide, and chromium (or titanium) thickness is 500 nanometers.
Difference from Example 3 is (referring to Fig. 5):
1) on silicon base 42 microns zone of oxidation 7 of growth as insulation layer;
2) sputtered aluminum, thickness are 0.7 micron;
3) adopt sputtering method deposited gold film 2 as lower electrode, utilize known Lift-off suspension technology to realize the little processing of figure simultaneously; Thickness is 0.15 micron;
4) NAFION film 3 thickness are 0.3 micron;
Wherein: before step 7), at room temperature deposit PARYLENEN-C film 1 in upper/lower electrode and with line that upper/lower electrode links to each other on, thick is 0.5 micron, purpose is to protect the electrode of its covering and the erosion that line is avoided solution; Step 6) as mask, adopts the oxygen plasma etch technology to carry out micrographics processing with photoresist material AZ5214.
Difference from Example 3 is:
As shown in Figure 6, the present invention adopts the independent deposition of silica layer 5 of electron beam evaporation (e-beam evaporation) technology, chromium or titanium layer 6, the independent deposition of silica layer 5 of present embodiment before step 3); And the NAFION micro-cantilever of 2 silicon base (sandwich structure of gold/NAFION/ gold).
Embodiment 5
Difference from Example 1 is: before step 7), at room temperature deposit PARYLENEN-C film 1 in upper/lower electrode and with line that upper/lower electrode links to each other on, thick is 0.6 micron (referring to Fig. 7).
Claims (9)
1. one kind based on polymer thin films minicell clamper, and it is characterized in that: have a plurality of socle girders, each socle girder is the three-decker that adds one deck polymeric films material between the two-layer golden mould material, and the one end is connected with substrate as inboardend; Between substrate and golden mould material, be provided with zone of oxidation; Described polymer is NAFION.
2. described based on polymer thin films minicell clamper according to claim 1, it is characterized in that: add silicon-dioxide and/or M layer between zone of oxidation and golden mould material, wherein M is chromium or titanium.
3. according to claim 1 or 2 described based on polymer thin films minicell clamper, it is characterized in that: wherein said substrate is silicon materials.
4. according to claim 1 or 2 described based on polymer thin films minicell clamper, it is characterized in that: described socle girder number 3～5 is for good.
5. preparation technology based on polymer thin films minicell clamper is characterized in that operating as follows:
1) adopt thermal oxidation technique, 1～2 micron the zone of oxidation of growing on silicon base is as insulation layer;
2) evaporation or sputtered aluminum, and with wet chemical etching acquisition micrographics as sacrifice layer; Thickness is 0.5～1 micron;
3) adopt the sputtering method deposited gold film as lower electrode, utilize the Lift-off suspension technology to realize the little processing of figure simultaneously; Thickness is 0.05～0.15 micron;
4) adopt coating processes to prepare the NAFION film, thickness is 0.2～0.5 micron;
5) adopt the sputtering method deposited gold film as top electrode, utilize the wet chemical etching to carry out the little processing of figure; Thickness is 80～100 nanometers;
6) adopt the oxygen plasma etch technology, be that mask carries out micrographics processing to the NAFION film with the top electrode;
7) utilize the wet chemical etching to remove sacrifice layer, after Critical Dryer technology obtains airborne gold/NAFION/ gold interlayer cantilever beam structures.
6. according to the described preparation technology based on the miniature performer of polymer thin films of claim 5, it is characterized in that: adopt electron beam evaporation technique deposition of silica and/or M layer successively before step 3), wherein the M layer is chromium or titanium; Step 3) utilizes the Lift-off suspension technology to realize the micrographics processing of silicon-dioxide and/or M layer and lower electrode double-layer films simultaneously; Wherein the thickness of silicon-dioxide is 0.5～1 micron, and chromium or titanium thickness are 200～500 nanometers, and lower electrode thickness is 0.05～0.15 micron.
7. according to claim 5 or 6 described preparation technologies based on the miniature performer of polymer thin films, it is characterized in that: step 6) as mask, adopts the oxygen plasma etch technology to carry out micrographics processing with photoresist material AZ5214; Before step 7), deposit the PARYLENEN-C film on electrode and line thereof, 0.4～0.6 micron.
8. according to the described preparation technology based on the miniature performer of polymer thin films of claim 5, it is characterized in that: it is Dupont that step 4) adopts coating processes to prepare the NAFION solution that the NAFION film adopted
SE-5012.
9. according to the described preparation technology based on the miniature performer of polymer thin films of claim 5, it is characterized in that: a described socle girder number is good with 3-5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100207728A CN100485024C (en) | 2004-06-16 | 2004-06-16 | Polymer film-based miniature cell holder and preparation process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100207728A CN100485024C (en) | 2004-06-16 | 2004-06-16 | Polymer film-based miniature cell holder and preparation process |
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| CN1710056A true CN1710056A (en) | 2005-12-21 |
| CN100485024C CN100485024C (en) | 2009-05-06 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101885464A (en) * | 2010-06-26 | 2010-11-17 | 上海交通大学 | Aluminum oxide double-layer membrane electric heating micro-actuator |
| CN114700877A (en) * | 2022-03-31 | 2022-07-05 | 河南四方达超硬材料股份有限公司 | Polycrystalline diamond polishing clamp |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8721018D0 (en) * | 1987-09-07 | 1987-10-14 | Alcan Int Ltd | Porous inorganic membrane support |
| US5672505A (en) * | 1993-09-27 | 1997-09-30 | Becton, Dickinson And Company | Insert for a issue culture vessel |
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2004
- 2004-06-16 CN CNB2004100207728A patent/CN100485024C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101885464A (en) * | 2010-06-26 | 2010-11-17 | 上海交通大学 | Aluminum oxide double-layer membrane electric heating micro-actuator |
| CN101885464B (en) * | 2010-06-26 | 2012-02-15 | 上海交通大学 | Aluminum oxide double-layer membrane electric heating micro-actuator |
| CN114700877A (en) * | 2022-03-31 | 2022-07-05 | 河南四方达超硬材料股份有限公司 | Polycrystalline diamond polishing clamp |
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|---|---|
| CN100485024C (en) | 2009-05-06 |
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