CN101885464B - Aluminum oxide double-layer membrane electric heating micro-actuator - Google Patents
Aluminum oxide double-layer membrane electric heating micro-actuator Download PDFInfo
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- CN101885464B CN101885464B CN2010102099742A CN201010209974A CN101885464B CN 101885464 B CN101885464 B CN 101885464B CN 2010102099742 A CN2010102099742 A CN 2010102099742A CN 201010209974 A CN201010209974 A CN 201010209974A CN 101885464 B CN101885464 B CN 101885464B
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Abstract
The invention relates to an aluminum oxide double-layer membrane electric heating micro-actuator, belonging to the technical field of the micro electro mechanical system (MEMS). The micro-actuator comprises a substrate, a down-arranged cavity, a base, an electrode, down-arranged resistance wires, an aluminum warping functional layer and an alumina pinning layer, wherein the tail end of the aluminum warping functional layer is connected with the base, and the other end suspends in the air; the alumina pinning layer is positioned above the aluminum warping functional layer and is tightly combined with the aluminum warping functional layer to form a double-layer membrane structure; the base is fixedly arranged on the substrate; the electrode is connected with the down-arranged resistance wires; the down-arranged resistance wires are positioned above the down-arranged cavity and suspend in the air with the substrate; and the down-arranged cavity is in a rectangular structure etched on the substrate. The aluminum oxide double-layer membrane electric heating micro-actuator of the invention utilizes nickel resistance wires which are arranged downwards and distributed in a strip shape as heating sources, and utilizes the aluminum oxide double-layer membrane structure formed by anode oxidation as an actuating body to fully exert the advantages of large actuating displacement, high energy density and good process compatibility of the electric heating micro-actuator, thereby expanding the application of the electric heating micro-actuator in the technical field of the MEMS.
Description
Technical field
What the present invention relates to is a kind of device of micro-electromechanical system field, specifically is a kind of aluminum oxide double-layer membrane electric heating micro-actuator with underlying cavity.
Background technology
Microdrive is an important component part of MEMS (MEMS).Because it is big to have drive displacement, power density is high, is convenient to advantages such as integrated manufacturing, and electric heating micro-driver receives publicity day by day.At present, the structure of common electric heating micro-driver mainly contains cold and hot arm configuration, V-type girder construction and double membrane structure etc.Wherein, the electric heating micro-driver of double membrane structure is different from cold and hot arm, the isostructural notable feature of V-type beam, promptly is the face outer displacement that can provide very big.Because this characteristic, the double-layer membrane electric heating microdrive has been played the part of the key player in application such as microrelay, photoswitch, optics micro mirror, variable capacitance.
The basic structure of double-layer membrane electric heating microdrive is the semi-girder with two kinds of combinations of materials of different heat expansion coefficient.Combinations such as metal and polysilicon, silicon dioxide, silit more commonly, the perhaps combination between metal and the polymkeric substance.And because the restriction of process conditions, the unrelieved stress that produces in the technological process can make semi-girder after release, be difficult to keep straight, the terminal excessive warpage displacement restriction of device the practical application of double-layer membrane electric heating microdrive.
The ultimate principle of double-layer membrane electric heating microdrive is to utilize expansion length difference and generating plane outside the warpage of different material layer when being heated.But because the driving of its duplicature essence; Inevitable requirement closely is formed by stacking two kinds or two or more materials; And shear stress is maximum at the combination interface place of material, and this just makes the duplicature driver face the so very big problem of layering between layer and the layer always.Traditional design all is through at the other a kind of material of a kind of surface deposition of material, thereby realizes the structure of duplicature.Common implementation has sputter, vapour deposition and coating etc., but the combination interface of this pure physical action has determined driver when work is stressed, unavoidably layering can take place in essence.
Retrieval through to prior art is found; People such as Werner Riethm ü ller have delivered autograph and have been one piece of article of " Thermally Excited Silicon Microactuators " (Chinese " through silicon microdrive of thermal excitation ") on IEEE TRANSACTIONS ONELECTRON DEVICES (" electron device journal " 1988 the 35th volumes 758-763 page or leaf), proposed the double-layer membrane electric heating microdrive of a kind of silicon and metal in the literary composition first.The layer that pins down of this driver is p
+Silicon, functional layer are gold, embed polysilicon as heating resistor in the gold layer, and silicon nitride is as insulation course.When polysilicon resistance is applied electric signal, according to the duplicature effect, this driver can be realized downwarping.But consider that this driver functions layer is a metallic gold, thereby cost is very high, in addition p
+Silicon and circuit are integrated incompatible.Simultaneously, the number of plies of cantilever beam structure is more, unavoidable generation layering during work, thus make component failure.
Summary of the invention
The present invention is directed to the above-mentioned deficiency that prior art exists; A kind of aluminum oxide double-layer membrane electric heating micro-actuator is provided; Utilize nickel resistance wire that the strip of underlying arranges as pyrotoxin; The aluminum aluminum oxide double membrane structure that utilizes anodic oxidation formation to give full play to the advantage that the electric heating micro-driver drive displacement is big, energy density is high, processing compatibility is good, enlarges the application of electric heating micro-driver in micro-electromechanical system field as driving main body.
The present invention realizes through following technical scheme; The present invention includes: substrate, underlying cavity, pedestal, electrode, underlying resistance wire, aluminium warpage functional layer and aluminium oxide pin down layer; Wherein: the end of aluminium warpage functional layer links to each other with pedestal, and the other end is unsettled, and aluminium oxide pins down layer and is positioned at aluminium warpage functional layer top and both formation double membrane structures of combining closely; Pedestal is fixedly set in the substrate; Electrode links to each other with the underlying resistance wire, and the underlying resistance wire is positioned at underlying cavity top and unsettled with substrate, and described underlying cavity is the rectangular configuration that is etched in the substrate.
Described substrate is quartz glass substrate or silicon base.
Described underlying resistance wire is the metallic nickel strip array of equidistantly arranging, and the length of described metallic nickel bar is the 300-600 micron, and width is the 5-30 micron, and thickness is the 2-5 micron, and stripe pitch is the 10-30 micron.
Described aluminium warpage functional layer is to stretch out unsettled cantilever beam structure, and long is the 300-600 micron, and wide is the 200-500 micron, and thickness is the 5-10 micron.
It is through the anodic oxidation of aluminium film is formed that described aluminium oxide pins down layer, and the thickness that this aluminium oxide pins down layer is the 2-5 micron.
Described aluminium warpage functional layer is a T font structure.
Described pedestal is the bulk structure that derby or SU8 glue are processed, and it highly is the 5-10 micron.
Through to alumilite process, make aluminum portions or all be oxidized to aluminium oxide, be widely used in the surface protection of aluminium, the preparation of porous alumina formwork, and the preparation of aluminium electrode etc.But unheeded is that the aluminium film has formed the double membrane structure of aluminum aluminum oxide after the segment anode oxidation.The interface of this duplicature is to combine through firm chemical bond, be far above the interface that combines through the general physics effect.Simultaneously, the thermal expansivity of aluminium has been about 3 times of aluminium oxide, and the duplicature effect is fairly obvious when being heated.But, thus for fear of introducing the combination interface that new material layer causes new physical action, the method that the heating of duplicature can not be used in embedded resistor in the duplicature realizes.Know that little to a certain degree the time in the clearance, the convection coefficient and the clearance of device surface are inversely proportional to.When the clearance had only several microns, the convection coefficient of device surface was more than thousands of times of natural convection, therefore postpone under the resistance can have been satisfied the heating to duplicature.And if the lower surface of resistance directly contacts with substrate, heat transfer type is heat conduction, and heating efficiency is significantly reduced.Therefore,, make that resistance and substrate are unsettled, can significantly improve the heating efficiency of pyrotoxin semi-girder through substrate being etched a underlying cavity.
When the present invention works, the electrode of underlying resistance wire is applied certain pulse voltage, the underlying resistance wire can produce Joule heat.Because the spacing between underlying resistance wire and the semi-girder is merely several microns, make the coefficient of heat transfer of resistance wire upper surface and the inversely proportional ground of spacing sharply increase, can reach thousands of times of NATURAL CONVECTION COEFFICIENT OF HEAT.And because the existence of underlying cavity, the lower surface of resistance wire and the distance of substrate are relatively large, compare with upper surface, and surface film thermal conductance is not on an one magnitude, so the Joule heat major part of resistance generation is used for the top heat supply.When duplicature was heated, aluminium warpage functional layer thermal expansivity was higher, and was in direct heating surface, and bigger expansion can take place, and that aluminium oxide pins down layer thermal expansivity is lower, and the expansion of generation is less, the warpage thereby the duplicature semi-girder makes progress.
Compared with prior art, the duplicature driver interface bond strength that the present invention is directed in the past is low, and problems such as easy layering have proposed to form the aluminum aluminum oxide double membrane structure through anodic alumina films.Compare with conventional in the past duplicature driver, the present invention has the following advantages: at first, because aluminium oxide is to be generated by the oxidation of part aluminium film, both interfaces combine through firm chemical bond, therefore can effectively avoid driver that layering takes place when work.Secondly, with the design that places under the resistance wire under the duplicature semi-girder, can significantly simplify the technology difficulty of semi-girder preparation.Secondly, suprabasil underlying cavity makes resistance wire directly not contact with substrate, thereby improves the thermal efficiency significantly again.At last, double membrane structure main body of the present invention is a metallic aluminium, and pliability is high, and is survivable, and can make semi-girder very straight through regulating mode of deposition reduction stress.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the structural representation of aluminum aluminum oxide duplicature.
Fig. 3 is the structural representation of Fig. 2 remainder.
Embodiment
Elaborate in the face of embodiments of the invention down, present embodiment provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment being to implement under the prerequisite with technical scheme of the present invention.
As shown in Figure 1; Present embodiment comprises: substrate 1, underlying cavity 2, electrode 3, underlying resistance wire 4, pedestal 5, aluminium warpage functional layer 6 and aluminium oxide pin down layer 7, and wherein: the end of aluminium warpage functional layer 6 links to each other with pedestal 1, and the other end is unsettled; Aluminium oxide pins down layer 7 and is positioned at aluminium warpage functional layer 6 tops and both formation double membrane structures of combining closely; Pedestal 5 is fixedly set in the substrate 1, and electrode 3 links to each other with underlying resistance wire 4, and underlying resistance wire 4 is positioned at underlying cavity 2 tops and unsettled with substrate 1.
Described underlying cavity 2 is etched into in the substrate 1, this underlying cavity 2 be rectangle, the degree of depth is 25 microns, the effect of underlying cavity is to make underlying resistance wire 4 be suspended on substrate 1.
As shown in Figure 2, pin down the structural representation of layer 7 for aluminium warpage functional layer 6 and aluminium oxide.Aluminium warpage functional layer 6 is " T " as shown in the figure word shapes, and end links to each other with pedestal 5, the unsettled formation semi-girder of the other end, and the length of semi-girder part is 450 microns, and wide is 350 microns, and thickness is 8 microns.Aluminium warpage functional layer 6 can be through sputter or vapor deposition preparation, and depositing temperature is low compatible mutually with existing micromachining technology.The shape that aluminium oxide pins down layer 7 is consistent with aluminium warpage functional layer 6, is to prepare gained through the aluminium membrane portions anodic oxidation to deposition.Because anodised aluminium oxide is a cavernous structure, intensity is lower, and therefore, aluminium oxide pins down the thickness of the thickness outline of layer 7 less than aluminium warpage functional layer 6, is 4 microns.
Fig. 3 is the structural representation that conceals device remainder behind the duplicature semi-girder.Substrate 1 is quartz glass disk or silicon chip, adopting quartz glass disk wherein, and cost is low, and the substrate coefficient of heat conductivity is low, helps preventing basad meaningless the scattering and disappearing of heat.Underlying cavity 2 is through the substrate etching being formed, being shaped as rectangle, dark 25 microns.Underlying resistance wire 4 is positioned at the top of underlying cavity 2, and end links to each other with electrode 3, thereby unsettled with substrate 1.Underlying resistance wire 4 is a metallic nickel, is shaped as the list structure of equidistant parallel arrangement, and length is 450 microns, and wide is 18 microns, and thickness is 4 microns, and stripe pitch is 20 microns.
This electric heating micro-driver can utilize existing micro fabrication to realize integrated manufacturing, and reliability is high, is expected to be applied to microrelay, photoswitch, and the optics micro mirror etc.
Claims (6)
1. aluminum oxide double-layer membrane electric heating micro-actuator; Comprise: substrate, underlying cavity, pedestal, electrode, underlying resistance wire, aluminium warpage functional layer and aluminium oxide pin down layer, it is characterized in that: the end of aluminium warpage functional layer links to each other with pedestal, and the other end is unsettled; Aluminium oxide pins down layer and is positioned at aluminium warpage functional layer top and both formation double membrane structures of combining closely; Pedestal is fixedly set in the substrate, and electrode links to each other with the underlying resistance wire, and the underlying resistance wire is positioned at underlying cavity top and unsettled with substrate; Described underlying cavity is the rectangular configuration that is etched in the substrate; Described pedestal is the bulk structure that derby or SU8 glue are processed, and it highly is the 5-10 micron, and the degree of depth of said underlying cavity is 25 microns.
2. aluminum oxide double-layer membrane electric heating micro-actuator according to claim 1 is characterized in that, described substrate is quartz glass substrate or silicon base.
3. aluminum oxide double-layer membrane electric heating micro-actuator according to claim 1; It is characterized in that; Described underlying resistance wire is the metallic nickel strip array of equidistantly arranging, and the length of described metallic nickel bar is the 300-600 micron, and width is the 5-30 micron; Thickness is the 2-5 micron, and stripe pitch is the 10-30 micron.
4. aluminum oxide double-layer membrane electric heating micro-actuator according to claim 1 is characterized in that, described aluminium warpage functional layer is to stretch out unsettled cantilever beam structure, and long is the 300-600 micron, and wide is the 200-500 micron, and thickness is the 5-10 micron.
5. aluminum oxide double-layer membrane electric heating micro-actuator according to claim 1 is characterized in that, it is through the anodic oxidation of aluminium film is formed that described aluminium oxide pins down layer, and the thickness that this aluminium oxide pins down layer is the 2-5 micron.
6. aluminum oxide double-layer membrane electric heating micro-actuator according to claim 1 is characterized in that, described aluminium warpage functional layer is a T font structure.
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JP2010504552A (en) * | 2006-09-20 | 2010-02-12 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Microactuator device for biochip or biosystem |
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CN1710056A (en) * | 2004-06-16 | 2005-12-21 | 中国科学院沈阳自动化研究所 | Polymer film based miniature cell clamp and preparing process thereof |
CN101478269A (en) * | 2009-02-12 | 2009-07-08 | 上海交通大学 | U type flexible beam composite material electric heating micro-driver having extension arm |
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