CN109768051A - A kind of the addressable cold cathode X-ray plane source device and preparation method of TFT driving - Google Patents
A kind of the addressable cold cathode X-ray plane source device and preparation method of TFT driving Download PDFInfo
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Abstract
The invention discloses a kind of addressable cold cathode X-ray plane source device of TFT driving, the addressable cold cathode X-ray plane source device of TFT driving includes active driving device；Using high-voltage isulation slider parallel opposite anode grid substrate and cathode base；Active driving device is high pressure TFT；Anode grid substrate has metallic film target layer；Cathode base includes addressable cold-cathode electron source array；On the same substrate, the preparation method for also disclosing the addressable cold cathode X-ray plane source device of TFT driving, which passes through, integrates TFT and cold cathode on the same substrate for high pressure TFT and the cold-cathode electron source array；High pressure TFT uses cirque structure, realizes that TFT operates normally high-resolution, the addressable X-ray plane source of low pressure, it can be achieved that large area driving under high source-drain voltage using offset drain electrode structure.
Description
Technical field
The present invention relate to belong to vacuum micro-nano electronic technology field more particularly to a kind of TFT driving addressable cold cathode it is flat
Plate x-ray source device further relates to a kind of preparation method of the addressable cold cathode X-ray plane source device of TFT driving.
Background technique
Using addressable X-ray plane source, the low dose imaging method of a new generation can be developed.Addressable X-ray plane
Source uses field emission cold-cathode microarray launching electronics, and bombardment metal targets generate X-ray.It has subregion, point by point emits
Ability, and have the advantages that low-power consumption, image forming job are apart from short, fast response time, and do not need to be equipped with bulky heating
Power supply and cooling equipment, using more flexible and convenient and easy to carry.Addressable X-ray plane source by column addressable cold yin
Pole electron source array and anode composition.The addressing driving method of cold-cathode electron source array can be divided into passive drive and active matrix driving
Two ways.In Active control of the emission current of field emitter arrays and A
In monolithic field emitter array with a two documents of JFET, researcher uses field-effect tube in succession
(MOSFET), the active device of technotron (JFET) regulates and controls cold cathode emission electric current, to improve each pixel hair of cold cathode
The consistency of radio stream and the stability of electric current.MOSFET and JFET and cold-cathode field emission array are integrated into one by existing research
It rises, effectively realize the control to cold-cathode field transmitting and improves the stability of Flied emission electric current, still, MOSFET and JFET
It can only be integrated together by silicon wafer with cold-cathode field emission array, and the current monolithic full-size of silicon wafer is 12 inches, due to
It is limited by silicon-based substrate, cannot achieve Large area active driving addressable electronic source array.
Summary of the invention
In order to overcome at least one of the drawbacks of the prior art described above, the addressable for providing a kind of TFT driving is cold by the present invention
Cathode X-ray plane source device and preparation method.
In order to solve the above technical problems, the technical solution adopted by the present invention is that: a kind of cold yin of addressable of TFT driving is provided
Pole X-ray plane source device, including active driving device, using high-voltage isulation slider parallel opposite anode grid substrate and cathode
Substrate, the anode grid substrate have metallic film target layer, and the cathode base includes nanometer cold cathode array and high pressure TFT, institute
Stating high pressure TFT is active driving device, and the high pressure TFT includes gate electrode, source electrode, drain electrode；The high pressure TFT
On the same substrate with the nanometer cold cathode array.It is driven using high pressure TFT and realizes low pressure addressable.High pressure TFT is used for
Reach the voltage environment of 1000 V or more.Cold-cathode electron source array is made of the cold cathode electrode that high pressure TFT drives.
Preferably, the X-ray plane source device is worked under Vacuum Package or dynamic vacuum.Dynamic vacuum is that do not have
There is encapsulation, run in vacuum chamber, vacuum pump is needed to maintain the vacuum of running environment；Vacuum Package is using vacuum sealed-off technology
Device is encapsulated, a portable device is formed, vacuum pump is not needed and maintains vacuum.
Preferably, each unit of the cold-cathode electron source array is operated alone by the high pressure TFT.Using high pressure
Addressable cold-cathode field transmitting may be implemented in TFT Active control.It is corresponding when the gate electrode application positive voltage to high pressure TFT
Cold cathode just open Flied emission；Apply negative voltage to the gate electrode of high pressure TFT, corresponding cold cathode just closes Flied emission.
In the device of entire addressable cold cathode X-ray plane source, each unit is controlled by individual high pressure TFT, can be to every
Addressable function is realized in the independent control of a unit.Simultaneously also make driving during it is more efficient, it is more stable.
The present invention also provides a kind of preparation methods of the addressable cold cathode X-ray plane source device of TFT driving, including with
Lower step:
1) cathode base is made:
A) substrate is cleaned,
B) make gate electrode on substrate, gate electrode can be by the metal materials such as Mo, Cr, Al, Ti, Cu and ITO, IZO,
The metal oxide materials such as AZO and other have outstanding electric conductivity and realize.
C) gate insulating layer is covered in above-mentioned gate electrode, insulating layer is by silica, silicon nitride, aluminium oxide or other tools
One or more layers insulation film composition made of the material and its mixing material of standby high-ohmic, insulation film can be using logical
Method for manufacturing thin film, as prepared by the methods of electron beam evaporation, sputtering and chemical vapor deposition.
D) active layer is made on above-mentioned gate insulating layer, active layer includes a-IGZO, a-IZTO, a-Si or p-Si etc. half
Conductor material.Active layer film can use general method for manufacturing thin film, such as the methods of sputtering and chemical vapor deposition preparation.
And patterned active layer is obtained using the method for localization etching, the method for etching active layer can be wet etching, react from
The general purpose films lithographic methods such as son etching.
E) source electrode and drain electrode are made in the top of above-mentioned active layer, had between gate electrode and drain electrode
Drain electrode structure is deviated, source electrode and drain electrode can be by the metal materials such as Mo, Cr, Al, Ti, Cu and ITO, IZO, AZO
Equal metal oxide materials and other have outstanding electric conductivity and realize.The preparation of source electrode and drain electrode film can be with
Using the general purpose films preparation method such as electron beam evaporation, sputtering and chemical vapor deposition.
F) passivation layer is covered in the top of above-mentioned source electrode and drain electrode, the passivation layer etching aperture forms etching
Through-hole, exposes drain electrode, passivation layer be by silica, silicon nitride, aluminium oxide or other materials for having high-ohmic and
The composition of one or more layers insulation film made of its mixing material, insulation film can use general method for manufacturing thin film, such as
The preparation of the methods of electron beam evaporation, sputtering and chemical vapor deposition.The method of etching insulating layer can be wet etching, reaction
The general purpose films lithographic method such as ion etching.
G) cold cathode electrode is made in the top of above-mentioned passivation layer, and is connect by etching through hole with drain electrode, cold yin
The material of pole electrode is one of good materials of electric conductivities such as oxidation-resistance property preferable ITO, IZO, AZO.
H) localization makes cold cathode pregrown film, cold cathode pregrown source film on the top of above-mentioned cold cathode electrode
It can be made by the general purpose films such as electron beam evaporation, sputtering and chemical vapor deposition preparation method, then using removing
Technology obtains the growth source membrane array grown for cold-cathode electron source array.The material of cold cathode pregrown film can be with
For one of tungsten, zinc, copper, iron, molybdenum, chromium or oxidable metal material or a variety of, and one is obtained by way of thermal oxide
Tie up metal oxide cold-cathode electron source array.
I) above-mentioned cold cathode pregrown film is heated under oxygen containing atmosphere 200 ~ 650 DEG C, and keeps the temperature 30 minutes
~ 12 hours, last Temperature fall obtained nanometer cold cathode array；High pressure TFT and nanometer cold cathode array are prepared in cathode base
On plate.
2) anode grid substrate is made:
A) anode metal film target layer is made on substrate,
B) anodic coating is made on above-mentioned anode metal film target layer,
3) anode grid substrate is parallel opposite using high-voltage isulation slider with the cathode base.
Offset drain electrode structure is devised between gate electrode and drain electrode, the active layer in this offset drain electrode structure region
Not by the regulation of gate electric field, while the higher anode voltage of nanometer cold cathode array can be born.
Offset drain electrode structure operates normally TFT under high source-drain voltage, deviates the active layer of drain region not by grid
The regulation of pole electric field is equivalent to resistance of having connected in channels, so that TFT can bear higher source-drain voltage；It is blunt
Change the preparation of layer, for protecting the channel of TFT；Passivation layer etches aperture, and exposing drain electrode is in order to subsequent by cold cathode collection
At in drain electrode；Using the method integration of Vertical collection, in the surface of high pressure TFT, high score may be implemented in nanometer cold cathode array
Distinguish addressable cold-cathode electron source array；It is obtained in the mode using thermal oxidation method and thinks metal oxide nano cold cathode battle array
Annealing process also is completed to high pressure TFT while column.
Preferably, the high-voltage isulation slider is one of glass, quartz, ceramics or ambroin, thickness
For the mm of 0.1 mm ~ 500.
Preferably, the anode grid substrate includes metallic film target layer and anodic coating, the metallic film target layer be tungsten,
One of molybdenum, rhodium, silver, copper, gold, chromium, aluminium, niobium, tantalum, rhenium or any several combined metallic films, with a thickness of 0.1 μm
~ 1500 μm, the anodic coating is the alloy firm of resistance to high temperature oxidation, with a thickness of the nm of 20 nm ~ 200.Anode is protected
Sheath is for protecting anode metal layer not oxidized during High-temperature Packaging.If device wants Vacuum Package, technological temperature
It is 400 DEG C or more, if anode metal will be oxidized without anodic coating.
Preferably, the high pressure TFT uses concentric structure, and the gate electrode, source electrode, drain electrode shape are
Circular ring shape or circle and center of circle coincidence, offset drain electrode structure length range are 1 ~ 50% channel length.High pressure TFT circular ring shape
The inside radius range of gate electrode is 0 μm ~ 500 μm, and the difference of inside radius and outer radius is 5 μm ~ 500 μm, annulus
The outer radius range of shape source electrode is 0 μm ~ 500 μm, and the difference of inside radius and outer radius is 5 μm ~ 500 μm, circle
The radius of shape drain electrode is 0 μm ~ 500 μm, and offset drain electrode structure length range is 0 μm ~ 500 μm.Grid electricity
Pole, source electrode, drain electrode are made of the material for having electric conductivity and compatible micro fabrication, including Mo, Cr, ITO,
Al, Cu, Ti, IZO or AZO.
Preferably, the active layer includes at least one of a-IGZO, a-IZTO, a-Si or p-Si.Gate electrode, source electrode
Electrode, drain electrode are made of the material for having electric conductivity and compatible micro fabrication, including Mo, Cr, ITO, Al, Cu, Ti,
IZO or AZO；
Preferably, the gate insulating layer and the passivation layer are by the material or its mixing material system for having high-ohmic
At, including silica, silicon nitride or aluminium oxide etc., the gate insulating layer with a thickness of the nm of 100 nm ~ 500, the passivation
Layer with a thickness of 0.1 μm ~ 1 μm.
Preferably, the material of the cold cathode pregrown film can be tungsten, zinc, copper, iron, molybdenum, chromium or oxidable gold
Belong to one of material or a variety of, and obtains one-dimensional metal oxide cold cathode electrode by way of thermal oxide.The cold yin
Pole electrode includes one of monodimension nanometer material or two-dimensional nano cold cathode thin-film material.One-dimensional linear nano material be ZnO,
WOx, CNTs, two-dimensional nano cold cathode thin-film material be graphene, diamond thin.
Compared with prior art, the beneficial effects of the present invention are:
1) device property for utilizing high pressure TFT, can effectively improve the stability of cold-cathode field emission current, realize to cold cathode
The switch and electric current of Flied emission accurately control；Using high pressure TFT as active matrix driving, nanometer cold cathode array is driven, it can
To reduce driving voltage, to reduce the cost of the driving circuit of large area cold-cathode electron source；High pressure TFT and nanometer cold yin
Integrated pole array is the effective way for realizing Large area active driving, low pressure addressable electronic source array.
2) when cold-cathode electron source array works, high voltage direct current or pulse voltage are applied to anode, while to corresponding height
The gate electrode of pressure TFT applies low-voltage direct or pulse voltage, corresponding nanometer cold cathode electrode and can make in the driving of high pressure TFT
With the lower transmitting and regulation for realizing electronics.Apply voltage by the gate electrode to high pressure TFT of selectivity, low pressure may be implemented
The addressable electronic of driving emits.
3) cold-cathode electron source array is vertically integrated into the surface of high pressure TFT, has high-resolution addressable transmitting electricity
The ability of son.And while completing nanometer cold cathode array growth technique, also the annealing of achievable high pressure TFT, is mutually compatible with
Preparation process both to can integrate on a glass substrate.It is thereby achieved that large-sized electron source array device
Preparation, and the cold-cathode electron source array can be applied to X-ray plane source, realize addressable X-ray plane source.
Detailed description of the invention
Fig. 1 is the structural representation in a kind of addressable cold cathode X-ray plane source device of TFT driving of the present invention
Figure；
Fig. 2 is the structure cut-away view of the cold-cathode electron source array in Fig. 1；
Fig. 3 is the overlooking structure diagram of the cold-cathode electron source array in Fig. 1；
Fig. 4 is the cold-cathode electron source array local overlooking structural schematic diagram in Fig. 3；
Fig. 5 is the production flow diagram of the cold-cathode electron source array in Fig. 1；
Description of symbols
Substrate 1；Gate electrode 2；Gate insulating layer 3；Active layer 4；Drain electrode 5；Deviate drain electrode structure 6；Source electrode 7；It is blunt
Change layer 8；Etching through hole 9；Cold cathode electrode 10；Growth source film 11；Nanometer cold cathode array 12；Gate electrode item 13；Source electrode
Electrode strip 14；Slider 15；Anode metal film target layer 16；Anodic coating 17.
Specific embodiment
The present invention is further illustrated With reference to embodiment.
The same or similar label correspond to the same or similar components in the attached drawing of the embodiment of the present invention；It is retouched in of the invention
In stating, it is to be understood that if there is the orientation of the instructions such as term " on ", "lower", "left", "right", "top", "bottom", "inner", "outside"
Or positional relationship is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description of the present invention and simplification of the description, and
It is not that the device of indication or suggestion meaning or element must have a particular orientation, be constructed and operated in a specific orientation, therefore
The terms describing the positional relationship in the drawings are only for illustration, should not be understood as the limitation to this patent.
In addition, if there is the terms such as " first ", " second " to be used for description purposes only, be mainly used for distinguishing different devices,
Element or component (specific type and construction may identical may also be different), is not intended to show or implies indicated fill
It sets, the relative importance and quantity of element or component, and should not be understood as indicating or implying relative importance.
Embodiment 1
As shown in Figure 1, showing for the structure in a kind of addressable cold cathode X-ray plane source device of TFT driving of the present invention
It is intended to, X-ray plane source using high pressure TFT by driving addressable cold-cathode electron source battle array and anode to form.Anode and Leng Yin
Certain anode and cathode spacing is kept using slider 15 between the electron source array of pole.Nanometer cold cathode array 12 in anode high voltage and
Outgoing electron bombards anode metal film target layer 16 under pulse grid voltage collective effect, to generate addressable X-ray.
Embodiment 2
As shown in Fig. 2, for the structure cut-away view of the cold-cathode electron source array in Fig. 1.As shown in Fig. 2, the electron source array
Basic structure, including substrate 1, the gate electrode 2 of circular ring shape, gate insulating layer 3, active layer 4, round drain electrode 5, offset leakage
Pole structure 6, the source electrode 7 of circular ring shape, passivation layer 8, cold cathode electrode 10 and nanometer cold cathode array 12.Nanometer cold cathode
Array 12 is vertically integrated into the surface of high pressure TFT, cold cathode electrode 10 by etching through hole 9 by nanometer cold cathode array 12 with
The drain electrode 5 of high pressure TFT connects, and sees Fig. 2 and Fig. 3.Because nanometer cold cathode array 12 is driven by high pressure TFT,
Under constant anode voltage, the grid voltage of high pressure TFT is regulated and controled, can be realized to cold-cathode electron source array can
Addressing regulation.
As shown in figure 3, the overlooking structure diagram of the cold-cathode electron source array in Fig. 3；Source electrode item 14 will be same
The source electrode 7 for arranging all high pressure TFT is connected, and the gate electrode 2 of all high pressure TFT of same a line is connected by gate electrode item 13
It connects.So as to apply pulse voltage realization to the addressable of nanometer cold cathode array to gate electrode item 13.
As shown in figure 4, for the cold-cathode electron source array local overlooking structural schematic diagram in Fig. 3；High pressure TFT is using concentric
Circle structure, gate electrode 2 and source electrode 7 are circular ring shape, and drain electrode 5 is circle.And in gate electrode 2 and drain electrode electricity
There is an offset drain electrode structure 6 between pole 5.The electricity that the active layer 4 in this offset 6 region of drain electrode structure is not generated by gate electrode 2
Field regulation, while the higher anode voltage of nanometer cold cathode array 12 can be born.Offset drain electrode structure 6 makes TFT in high source and drain
It is operated normally under voltage.
Embodiment 3
As shown in figure 5, for the production flow diagram of the cold-cathode electron source array in Fig. 1.
This gives addressable as the use high pressure TFT driving of cold-cathode material using zinc oxide nanowire
Cold-cathode electron source array manufacturing process.
Glass substrate acetone, ethyl alcohol and deionized water are cleaned by ultrasonic 20 minutes respectively first, and with being dried with nitrogen.?
In glass substrate, circular ring shape gate electrode 2 is prepared using magnetically controlled DC sputtering vacuum coating technology, photoetching and wet etching.
The electrode material is molybdenum, and thickness is about 200 nm.Such as Fig. 5 (a).
It is thin in above-mentioned 2 disposed thereon gate insulating layer 3 of gate electrode with the method for plasma enhanced chemical vapor deposition
Film, insulating layer of thin-film are silica membrane, and thickness is about 300 nm.Radio frequency magnetron is used in the top of gate insulating layer 3
Sputtering vacuum coating technology, photoetching and wet etching prepare active layer 4, and the material of active layer 4 is a-IGZO, and thickness is about
50 nm.Such as Fig. 5 (b).
Annulus is prepared using magnetically controlled DC sputtering vacuum coating technology, photoetching and wet etching in the top of active layer 4
Shape source electrode 7 and round drain electrode 5.The electrode material is molybdenum, and thickness is about 200 nm.Such as Fig. 5 (c).
The method of using plasma enhancing chemical vapor deposition 8 film of deposit passivation layer, passivation layer 8 on above structure
Film is silica membrane, and thickness is about 300 nm.Such as Fig. 5 (d).
Then etching through hole 9 is obtained using reactive ion etching technology etching silicon dioxide, for connecting cold cathode electrode
The drain electrode 5 of 10 and high pressure TFT.Such as Fig. 5 (e).
Then in the top of above-mentioned passivation layer 8, using photoetching, magnetically controlled DC sputtering vacuum coating technology and stripping technology
Prepare cold cathode electrode 10.In 10 film preparation deposition process of cold cathode electrode, top electrodes film can also be deposited on passivation
Opening edge edge, inner wall and the partial high pressure TFT drain electrode 5 for being exposed to 9 bottom of etching through hole of etching through hole 9 on layer 8, this
Sample cold cathode electrode 10 can be connected with high pressure TFT drain electrode 5 well.Top electrode material is ITO, and thickness is about
200 nm.Such as Fig. 5 (f).
Then photoetching positions cold-cathode electron source array growth district on the top of cold cathode electrode 10, then using electricity
Beamlet evaporation in vacuo coating technique plates growth source film 11, which is zinc film, is grown using stripping means
Source zinc membrane array.Such as Fig. 5 (g).
Finally the glass substrate that production has above-mentioned membrane structure is put into tube furnace and is aoxidized to obtain the cold yin of zinc oxide
Pole electron source array.Thermal oxidation process is first increased to 470 DEG C from room temperature, then keeps the temperature 2 hours at 470 DEG C, last naturally cold
But, above-mentioned entire oxidation process carries out under air.Such as Fig. 5 (h).
Anode the preparation method is as follows: glass substrate acetone, ethyl alcohol and deionized water are cleaned by ultrasonic 20 minutes respectively,
And with being dried with nitrogen.On a glass substrate, anode metal film target layer 16 is prepared using magnetically controlled DC sputtering vacuum coating technology.
16 material of anode metal film target layer is tungsten, and thickness is about 500 nm.Magnetically controlled DC sputtering vacuum coating skill is used later
Art prepares anodic coating 17.17 material of anodic coating is aluminium, and thickness is about 100 nm.Ceramic insulator 15 with a thickness of
1 mm.Under constant anode voltage, addressable transmitting X-ray can be realized by applying pulse voltage to the grid of high pressure TFT
X-ray plane source.
When the working principle of the invention is cold-cathode electron source array work, high voltage direct current or pulse electricity are applied to anode
Pressure, while applying low-voltage direct or pulse voltage to the grid of corresponding high pressure TFT, corresponding cold-cathode electron source array can be
The transmitting and regulation of electronics are realized under the driving effect of high pressure TFT.Apply voltage by the grid to high pressure TFT of selectivity,
The addressable electronic transmitting of low-voltage driving may be implemented.Meanwhile cold-cathode electron source array is vertically integrated into high pressure by the present invention
The surface of TFT has the ability of high-resolution addressable launching electronics.And complete cold-cathode electron source array growth technique
While, the also annealing of achievable high pressure TFT, mutually compatible preparation process can integrate the two on a glass substrate.Cause
This, may be implemented the preparation of large-sized electron source array device, and the cold-cathode electron source array can be applied to plate X and penetrate
Line source realizes addressable X-ray plane source.
It is important to note that actual fabrication process is not limited only to above-mentioned lifted example, can also use
Other similar micro-processing methods realize device architecture, and realize cold-cathode electron source using other similar growth means
The growth of array.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention.For those of ordinary skill in the art, may be used also on the basis of the above description
To make other variations or changes in different ways.There is no necessity and possibility to exhaust all the enbodiments.It is all this
Made any modifications, equivalent replacements, and improvements etc., should be included in the claims in the present invention within the spirit and principle of invention
Protection scope within.
Claims (10)
1. a kind of addressable cold cathode X-ray plane source device of TFT driving, including substrate, active driving device, using high pressure
Insulating spacer parallel opposite anode grid substrate and cathode base, which is characterized in that
The anode grid substrate includes metallic film target layer；
The cathode base includes nanometer cold cathode array and high pressure TFT；
The high pressure TFT is active driving device, and the high pressure TFT includes gate electrode, source electrode, drain electrode；
The high pressure TFT and the nanometer cold cathode array are on the same substrate.
2. according to claim 1 TFT driving addressable cold cathode X-ray plane source device, which is characterized in that it is described can
Addressing cold cathode X-ray plane source device is worked under Vacuum Package or dynamic vacuum.
3. the addressable cold cathode X-ray plane source device of TFT driving according to claim 1, which is characterized in that described to receive
Each unit of rice cold cathode array is operated alone by the high pressure TFT.
4. a kind of preparation method of the addressable cold cathode X-ray plane source device of the driving of TFT according to claim 1,
It is characterized in that, comprising the following steps:
1) cathode base is made:
A) substrate is cleaned；
B) gate electrode is made on substrate；
C) gate insulating layer is covered in above-mentioned gate electrode；
D) active layer is made on above-mentioned gate insulating layer；
E) source electrode and drain electrode are made in the top of above-mentioned active layer, is offset between gate electrode and drain electrode
Drain electrode structure；
F) passivation layer is covered in the top of above-mentioned source electrode and drain electrode, it is logical that the passivation layer etching aperture forms etching
The drain electrode is exposed in hole；
G) cold cathode electrode is made in the top of above-mentioned passivation layer, the cold cathode electrode passes through the etching through hole and the leakage
The connection of pole electrode；
H) localization makes cold cathode pregrown film on the top of above-mentioned cold cathode electrode；
I) above-mentioned cold cathode pregrown film is heated under oxygen containing atmosphere 200 ~ 650 DEG C, and keeps the temperature 30 minutes ~ 12
Hour, last Temperature fall obtains nanometer cold cathode array；
2) anode grid substrate is made:
A) anode metal film target layer is made on substrate；
B) anodic coating is made on above-mentioned anode metal film target layer；
3) anode grid substrate is parallel opposite using high-voltage isulation slider with the cathode base.
5. the preparation method of the addressable cold cathode X-ray plane source device of TFT driving according to claim 4, feature
It is, the high-voltage isulation slider is one of glass, quartz, ceramics or ambroin, the high-voltage isulation isolation
Body with a thickness of the mm of 0.1 mm ~ 500.
6. the preparation method of the addressable cold cathode X-ray plane source device of TFT driving according to claim 4, feature
It is, the metallic film target layer is one of tungsten, molybdenum, rhodium, silver, copper, gold, chromium, aluminium, niobium, tantalum, rhenium or arbitrarily several groups
Close, the metallic film target layer with a thickness of 0.1 μm ~ 1500 μm, the anodic coating is the alloy of resistance to high temperature oxidation
Film, the anodic coating with a thickness of the nm of 20 nm ~ 200.
7. the preparation method of the addressable cold cathode X-ray plane source device of TFT driving according to claim 4, feature
Be, the gate electrode, source electrode, drain electrode shape be circular ring shape or circle and the center of circle is overlapped, the offset
The length range of drain electrode structure is 1 ~ 50% channel length.
8. the preparation method of the addressable cold cathode X-ray plane source device of TFT driving according to claim 4, feature
It is, the active layer includes at least one of a-IGZO, a-IZTO, a-Si or p-Si.
9. the preparation method of the addressable cold cathode X-ray plane source device of TFT driving according to claim 4, feature
It is, the gate insulating layer and the passivation layer are made of the material for having high-ohmic or its mixing material, described
Gate insulating layer with a thickness of the nm of 100 nm ~ 500, the passivation layer with a thickness of 0.1 μm ~ 1 μm.
10. the preparation method of the addressable cold cathode X-ray plane source device of TFT driving according to claim 4, feature
It is, the material of the cold cathode pregrown film is one of oxidable metal material or a variety of, the cold cathode electricity
Pole includes one of monodimension nanometer material or two-dimensional nano cold cathode thin-film material.
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| CN109427912A (en) * | 2017-08-21 | 2019-03-05 | 中国科学院物理研究所 | Thin film transistor (TFT) and field-effect diode |
| CN111063597A (en) * | 2019-12-23 | 2020-04-24 | 中山大学 | Grid-anode interdigital grid-control flat X-ray source and preparation method thereof |
| CN111081505A (en) * | 2019-12-24 | 2020-04-28 | 中山大学 | Nano cold cathode electron source with coplanar double-gate focusing structure and manufacturing method thereof |
| CN113471052A (en) * | 2021-06-29 | 2021-10-01 | 中山大学 | Photoconductive cold cathode flat-panel X-ray detector and preparation method and application thereof |
| CN114050099A (en) * | 2021-10-28 | 2022-02-15 | 中山大学 | Cold cathode flat X-ray source driven by high-voltage TFT and preparation method |
| CN114188198A (en) * | 2021-10-21 | 2022-03-15 | 中山大学 | Annular addressable cold cathode X-ray source device and preparation method and application thereof |
| CN115000108A (en) * | 2022-06-06 | 2022-09-02 | 中山大学 | Addressable flat X-ray source driven by high-voltage TFT and preparation method thereof |
| CN114188198B (en) * | 2021-10-21 | 2024-04-26 | 中山大学 | Annular addressable cold cathode X-ray source device and preparation method and application thereof |
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| CN111063597A (en) * | 2019-12-23 | 2020-04-24 | 中山大学 | Grid-anode interdigital grid-control flat X-ray source and preparation method thereof |
| CN111063597B (en) * | 2019-12-23 | 2022-05-17 | 中山大学 | Grid-anode interdigital grid-control flat X-ray source and preparation method thereof |
| CN111081505A (en) * | 2019-12-24 | 2020-04-28 | 中山大学 | Nano cold cathode electron source with coplanar double-gate focusing structure and manufacturing method thereof |
| CN113471052A (en) * | 2021-06-29 | 2021-10-01 | 中山大学 | Photoconductive cold cathode flat-panel X-ray detector and preparation method and application thereof |
| CN114188198A (en) * | 2021-10-21 | 2022-03-15 | 中山大学 | Annular addressable cold cathode X-ray source device and preparation method and application thereof |
| CN114188198B (en) * | 2021-10-21 | 2024-04-26 | 中山大学 | Annular addressable cold cathode X-ray source device and preparation method and application thereof |
| CN114050099A (en) * | 2021-10-28 | 2022-02-15 | 中山大学 | Cold cathode flat X-ray source driven by high-voltage TFT and preparation method |
| CN115000108A (en) * | 2022-06-06 | 2022-09-02 | 中山大学 | Addressable flat X-ray source driven by high-voltage TFT and preparation method thereof |
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