CN1697201A - 硅薄膜太阳电池用p型窗口层及其制备方法 - Google Patents
硅薄膜太阳电池用p型窗口层及其制备方法 Download PDFInfo
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- CN1697201A CN1697201A CNA2005100138629A CN200510013862A CN1697201A CN 1697201 A CN1697201 A CN 1697201A CN A2005100138629 A CNA2005100138629 A CN A2005100138629A CN 200510013862 A CN200510013862 A CN 200510013862A CN 1697201 A CN1697201 A CN 1697201A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2005100138629A CN1277318C (zh) | 2005-06-20 | 2005-06-20 | 硅薄膜太阳电池用p型窗口层及其制备方法 |
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CNB2005100138629A CN1277318C (zh) | 2005-06-20 | 2005-06-20 | 硅薄膜太阳电池用p型窗口层及其制备方法 |
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CN1697201A true CN1697201A (zh) | 2005-11-16 |
CN1277318C CN1277318C (zh) | 2006-09-27 |
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CNB2005100138629A Active CN1277318C (zh) | 2005-06-20 | 2005-06-20 | 硅薄膜太阳电池用p型窗口层及其制备方法 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101794828A (zh) * | 2010-03-12 | 2010-08-04 | 河南阿格斯新能源有限公司 | 薄膜太阳电池的膜系、薄膜太阳电池及其制造方法 |
CN101159297B (zh) * | 2007-11-19 | 2011-05-04 | 南开大学 | SnO2为衬底的微晶硅薄膜太阳电池用透明导电薄膜的制备方法 |
CN102082188A (zh) * | 2010-10-27 | 2011-06-01 | 新奥光伏能源有限公司 | 太阳电池窗口层材料及其制备方法和应用 |
CN102456761A (zh) * | 2010-11-02 | 2012-05-16 | 方靖淮 | 薄膜太阳能电池 |
CN101350377B (zh) * | 2007-07-18 | 2012-06-13 | 肖特太阳能股份公司 | 硅多结太阳能电池及其制备方法 |
CN102496647A (zh) * | 2011-12-28 | 2012-06-13 | 营口联创太阳能科技有限公司 | 增设电极修饰层的非晶硅薄膜电池及制作方法 |
CN104393120A (zh) * | 2014-10-20 | 2015-03-04 | 上海空间电源研究所 | 非晶硅锗薄膜太阳电池顶电池p型层的制备方法及用途 |
CN112542548A (zh) * | 2020-12-08 | 2021-03-23 | 云南师范大学 | 一种薄膜晶硅钙钛矿异质结太阳电池及其制备方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101471387B (zh) * | 2007-12-27 | 2012-07-11 | 财团法人工业技术研究院 | 光电转换元件的p型掺杂层及其制造方法 |
-
2005
- 2005-06-20 CN CNB2005100138629A patent/CN1277318C/zh active Active
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101350377B (zh) * | 2007-07-18 | 2012-06-13 | 肖特太阳能股份公司 | 硅多结太阳能电池及其制备方法 |
CN101159297B (zh) * | 2007-11-19 | 2011-05-04 | 南开大学 | SnO2为衬底的微晶硅薄膜太阳电池用透明导电薄膜的制备方法 |
CN101794828A (zh) * | 2010-03-12 | 2010-08-04 | 河南阿格斯新能源有限公司 | 薄膜太阳电池的膜系、薄膜太阳电池及其制造方法 |
CN102082188A (zh) * | 2010-10-27 | 2011-06-01 | 新奥光伏能源有限公司 | 太阳电池窗口层材料及其制备方法和应用 |
CN102456761A (zh) * | 2010-11-02 | 2012-05-16 | 方靖淮 | 薄膜太阳能电池 |
CN102496647A (zh) * | 2011-12-28 | 2012-06-13 | 营口联创太阳能科技有限公司 | 增设电极修饰层的非晶硅薄膜电池及制作方法 |
CN104393120A (zh) * | 2014-10-20 | 2015-03-04 | 上海空间电源研究所 | 非晶硅锗薄膜太阳电池顶电池p型层的制备方法及用途 |
CN104393120B (zh) * | 2014-10-20 | 2017-01-18 | 上海空间电源研究所 | 非晶硅锗薄膜太阳电池顶电池p型层的制备方法及用途 |
CN112542548A (zh) * | 2020-12-08 | 2021-03-23 | 云南师范大学 | 一种薄膜晶硅钙钛矿异质结太阳电池及其制备方法 |
CN112542548B (zh) * | 2020-12-08 | 2023-10-20 | 云南师范大学 | 一种薄膜晶硅钙钛矿异质结太阳电池及其制备方法 |
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Publication number | Publication date |
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CN1277318C (zh) | 2006-09-27 |
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Application publication date: 20051116 Assignee: GS-Solar (Beijing) Company Limited Assignor: Quanzhou Jinhui Energy Technology Co., Ltd. Contract record no.: 2012350000165 Denomination of invention: P type window layer in use for solar cell of silicon thin film, and preparation method Granted publication date: 20060927 License type: Exclusive License Record date: 20121205 |
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