CN1693914A - Transistor measuring instrument - Google Patents
Transistor measuring instrument Download PDFInfo
- Publication number
- CN1693914A CN1693914A CN 200510009987 CN200510009987A CN1693914A CN 1693914 A CN1693914 A CN 1693914A CN 200510009987 CN200510009987 CN 200510009987 CN 200510009987 A CN200510009987 A CN 200510009987A CN 1693914 A CN1693914 A CN 1693914A
- Authority
- CN
- China
- Prior art keywords
- resistance
- connects
- pin
- diode
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004891 communication Methods 0.000 claims abstract description 7
- 230000005669 field effect Effects 0.000 claims description 8
- 238000005070 sampling Methods 0.000 claims description 8
- 230000003068 static effect Effects 0.000 claims description 6
- 230000008676 import Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 6
- 230000009466 transformation Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Images
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
A transistor measuring device is an instrument that identifies polarity of each pin of transistor and various parameters. It is composed of a carry computer, a control unit, a measure interface circuit and a direct current power supply with adjustable press. computer and control unit communication interfaces are linked together; One of control unit exportation interfaces is linked with power supply control interface; The other interface of control unit is linked with inputend of interface circuit input; control unit exportation interface is linked with control unit input interface, and power supply output interface is linked with the power supply. control unit provides different voltages to the transistor pins through control unit and people can judge these pins attributes according to whether the PN stanza can transmit electric current. power supply works when people are measuring parameters. computer adopts a normal personal computer and control unit chooses a low cost, small volume chip. Moreover,the situation that computer is linked with control unit through a main line of USB makes the invention more popular.
Description
Technical field:
The present invention relates to a kind of instrument of discerning each pin polarity of transistor and measuring the transistor parameters.
Background technology:
The surveying instrument of traditional transistor parameters generally adopts the complicated hardware circuit to realize, causes finished product price height, function singleness, and bulky, usable range and precision are limited.Though also occurred intelligentized transistor measuring instrument device at present, these instruments are many to be core with the special purpose computer and to dispose corresponding special software and the hardware integrated circuit board, because this kind scheme hardware radix is bigger, so volume is still huge, costs an arm and a leg.
Summary of the invention:
The purpose of this invention is to provide a kind of transistor measuring instrument, to overcome the big and defect of high cost of existing transistor measuring instrument device complex structure, volume.The present invention includes host computer 1, control module 2, measure interface circuit 3 and tunable voltage dc power supply 4, the communication port of host computer 1 is connected by the communication port of usb bus with control module 2, an output terminal of control module 2 connects the controlled end of tunable voltage dc power supply 4, another output terminal of control module 2 connects an input end measuring interface circuit 3, the output terminal of measuring interface circuit 3 connects the input end of control module 2, and the output terminal of tunable voltage dc power supply 4 connects the power end of measuring interface circuit 3.When measuring instrument of the present invention is worked, another input end of measuring interface circuit 3 connects tested transistor, according to transistorized PN junction characteristic, be that P knot adds positive voltage and N knot when adding negative voltage, electric current meeting conducting, when N knot add positive voltage, when the P knot adds negative voltage, electric current can conducting, control module 2 applies high-low level at transistorized different pins respectively through measuring interface circuit 3, save P, the N attribute whether conducting just can be differentiated each pin of transistor according to PN, thereby realize differentiating the function of transistor pin polarity.When measuring parameters such as transistorized amplification coefficient, breakdown reverse voltage, reverse leakage current when needs, according to the transistor polarity of having measured, tunable voltage dc power supply 4 is received transistorized respective pin, when changing the output voltage of tunable voltage dc power supply 4 transistorized relevant parameter is changed Input Control Element 2 and just can draw transistorized parameters value.The present invention can also be used to measuring resistance and the voltage stabilizing value of zener diode, the resistance of thermistor etc. of resistance commonly used.Host computer 1 of the present invention adopts universal personal computer to get final product, therefore reduced the cost of this tester, control module 2 selects for use the singlechip chip that cost is low, volume is little to get final product, and use usb bus between host computer 1 and the control module 2, improved versatility of the present invention, the present invention have volume small and exquisite, be easy to carry, easy to install and cheap advantage.
Description of drawings:
Fig. 1 is a structural representation of the present invention, and Fig. 2 is an electrical block diagram of the present invention, and Fig. 3 is the structural representation of embodiment four, and Fig. 4 is the program flow diagram in the host computer in the embodiment four.
Embodiment:
Embodiment one: specify present embodiment below in conjunction with Fig. 1.Present embodiment is made up of host computer 1, control module 2, measurement interface circuit 3 and tunable voltage dc power supply 4, the communication port of host computer 1 is connected by the communication port of usb bus with control module 2, an output terminal of control module 2 connects the controlled end of tunable voltage dc power supply 4, another output terminal of control module 2 connects an input end measuring interface circuit 3, the output terminal of measuring interface circuit 3 connects the input end of control module 2, and the output terminal of tunable voltage dc power supply 4 connects the power end of measuring interface circuit 3.
Embodiment two: specify present embodiment below in conjunction with Fig. 2.The difference of present embodiment and embodiment one is: control module 2 is selected singlechip chip U1 for use, the model of singlechip chip U1 is PIC16C765, the pin 23 of singlechip chip U1 is connected host computer 1 with pin 24 by usb bus, measure interface circuit 3 by the 23 resistance R 23, the 24 resistance R 24, the 25 resistance R 25, a relay J 1, No. two relay J 2, No. three relay J 3, the second diode N2, the 3rd diode N3, the 4th diode N4 and slot J6 form, one end of the 23 resistance R 23 connects the pin 19 of singlechip chip U1, the other end of the 23 resistance R 23 connects the pin 2 of singlechip chip U1 and the normally closed contact of a relay J 1, the end of the solenoid K1 of a relay J 1 connects the negative electrode of the power supply VCC and the second diode N2, the other end of solenoid K1 connects the anode of the second diode N2 and the pin 8 of singlechip chip U1, one end of the 24 resistance R 24 connects the pin 20 of singlechip chip U1, the other end of the 24 resistance R 24 connects the pin 3 of singlechip chip U1 and the normally closed contact of No. two relay J 2, the end of the solenoid K2 of No. two relay J 2 connects the negative electrode of power supply VCC and the 3rd diode N3, the other end of solenoid K2 connects the anode of the 3rd diode N3 and the pin 9 of singlechip chip U1, one end of the 25 resistance R 25 connects the pin 21 of singlechip chip U1, the other end of the 25 resistance R 25 connects the pin 4 of singlechip chip U1 and the normally closed contact of No. three relay J 3, the end of the solenoid K3 of No. three relay J 3 connects the negative electrode of power supply VCC and the 4th diode N4, the other end of solenoid K3 connects the static contact of 10, numbers relay J 1 of pin of the anode of the 4th diode N4 and singlechip chip U1, the static contact of the static contact of No. two relay J 2 and No. three relay J 3 is connected on three pins of slot J6; Tunable voltage dc power supply 4 is by transformer T1, rectification circuit U2, triode Q1, first capacitor C 1, second capacitor C 2, the 5th diode N5, the 30 resistance R 30, the 29 resistance R 29, the 28 resistance R 28, the 4th resistance R 4, the 5th resistance R 5 and the 6th resistance R 6 are formed, one end on the former limit of transformer T1 connects the negative electrode of power supply VCC and the 5th diode N5, the anode of the 5th diode N5 connects an end of the 30 resistance R 30 and the collector of triode Q1, the other end of the 30 resistance R 30 connects the other end on the former limit of transformer T1, the base stage of triode Q1 connects an end of the 29 resistance R 29 and an end of the 28 resistance R 28, the other end of the 29 resistance R 29 connects emitter and the ground connection of triode Q1, the other end of the 28 resistance R 28 connects the pin 17 of singlechip chip U1, the two ends of transformer T1 secondary connect two input ends of rectification circuit U2 respectively, the cathode output end of rectification circuit U2 connects the positive pole of first capacitor C 1, one end of the positive pole of second capacitor C 2 and the 4th resistance R 4, the cathode output end of rectification circuit U2 connects the negative pole of first capacitor C 1, the negative pole of second capacitor C 2 and ground connection, the other end of the 4th resistance R 4 connects the normally opened contact of a relay J 1, the normally opened contact of No. two relay J 2, one end of the normally opened contact of No. three relay J 3 and the 5th resistance R 5, the other end of the 5th resistance R 5 connects the pin 5 of singlechip chip U1 and an end of the 6th resistance R 6, the other end ground connection of resistance R 6.
If in slot J6, insert a crystal diode, realize by control module 2 and the measurement interface circuit transistorized both positive and negative polarity of 3 identifications following steps by way of example with the software in the host computer 1: the pin 8 of (1) singlechip chip U1, pin 9 and pin 10 are general I/O pin, when identification, all be changed to high level (logical one), the pin 19 of singlechip chip U1, pin 20 and pin 21 are general I/O pin, is the pin 2 of singlechip chip U1, pin 3 and pin 4 usefulness software setting A/D conversion input pin, and reference voltage is+5V.(2) allow pin 19 output+5V, pin 20 output 0V, the pin 21 of U1 be changed to input (this pin is a high-impedance state at input state), the A/D transformation result that at this moment reads on the pin 3 is 0V; (3) allow pin 20 output+5V, pin 19 output 0V, the pin 21 of U1 be changed to input (this pin is a high-impedance state at input state) then, at this moment the A/D transformation result of the pin 2 of U1 is 0V, and hence one can see that, between 1,2 pins of slot J6 for opening circuit; (4) allow pin 20 output+5V, pin 21 output 0V, the pin 19 of U1 be changed to input (this pin is a high-impedance state at input state), at this moment the A/D transformation result of pin 4 is 0V; (5) allow pin 21 output+5V, pin 20 output 0V, the pin 19 of singlechip chip U1 be changed to input (this pin is a high-impedance state at input state) then, at this moment the A/D transformation result of pin 3 is not 0V, and hence one can see that, is path between 2,3 pins of slot J6, and unidirectional conducting, be PN junction; (6) allow the pin 21 output+5V of singlechip chip U1, pin 19 export 0V, pin 20 high resistants, at this moment the A/D transformation result of pin 2 is 0V, allows pin 19 output+5V, pin 21 export 0V, pin 20 high resistants then, and at this moment pin 4A/D transformation result is 0V, hence one can see that, between 1,3 pins of slot J6 for opening circuit; So in fact judged the positive and negative electrode of diode.So just the different PN junction characteristic that has separately according to them just can be judged different electron devices.Can also be according to the parameter of the outcome measurement different components of judging, as: the resistance of resistance commonly used, the voltage stabilizing value of zener diode etc.And the triode pin is differentiated identical with diode pin discrimination principles, and triode can be regarded 2 diodes that link together as.The measurement of voltage breakdown is to carry out on the basis that pin is differentiated, and after the collector of triode, emitter, base stage had been determined, the principle that reverse pressurization has snowslide phenomenon according to P, N knot was measured voltage breakdown.Now illustrate: on J6, insert a transistor, the emitter of triode, base stage and collector be pin 19, pin 20 and the pin 21 of corresponding singlechip chip U1 respectively, collector---the base break down voltage when the measurement emitter current is zero: the pin 19 of (1) singlechip chip U1 is changed to input (this pin is a high-impedance state at input state), pin 20 is changed to input (this pin is a high-impedance state at input state), pin 21 output 0V, pin 9 output 0V (relay J 2 of pin 20 correspondences switches to high-pressure side).(2) imported the primary voltage value in 0.1 second and in single-chip microcomputer, carry out an A/D conversion by pin 5 every intervals of singlechip chip U1, obtaining the A/D transforming numerical subtracts each other with numerical value last time, up to subtracting each other the result is 0, promptly reaches the snowslide flex point, and this voltage is this P, N junction breakdown voltage.Emitter---collector---principle of emitter voltage breakdown and test set electrode---the base break down voltage V when base break down voltage and base current are zero when the measurement collector current is zero
CboPrinciple identical.The measurement of reverse leakage current also is to carry out on the basis that pin is differentiated, after knowing the collector, emitter, base stage of triode, reverse pressurization has the principle of snowslide phenomenon according to P, N knot, can measure voltage breakdown, and a period of time before snowslide, P, N economize on electricity stream should be stable, and Nei current value is called as reverse leakage current during this period of time.Just can obtain reverse leakage current with the breakdown reverse voltage that records divided by sample resistance.
Embodiment three: specify present embodiment below in conjunction with Fig. 2.The difference of present embodiment and embodiment two is: it also comprises warning circuit 6, warning circuit 6 is made up of the 3rd resistance R 3, field effect transistor M11 and light emitting diode N1, one end of the 3rd resistance R 3 connects an end of the 5th resistance R 5, the other end of the 3rd resistance R 3 connects the drain electrode of field effect transistor M11, the source ground of field effect transistor M11, the negative electrode of the grid sending and receiving optical diode N1 of field effect transistor M11, the pin 29 of the anode order sheet machine chip U1 of light emitting diode N1.Other composition is identical with embodiment two with annexation.When parameters such as the amplification coefficient of test transistor, breakdown reverse voltage, reverse leakage current, the tunable voltage dc power supply 4 of this testing tool is switched on work, and high voltage direct current is dangerous to the people, so provide warning function by light emitting diode N1 to the people.
Embodiment four: specify present embodiment below in conjunction with Fig. 3 and Fig. 4.The difference of present embodiment and embodiment one is that it also comprises thermistor R20, the 21 resistance R 21, voltage sampling circuit 7, A/D change-over circuit 8 and host computer 1, the termination power VAA of thermistor R20, the other end of thermistor R20 is by the 21 resistance R 21 ground connection, voltage sampling circuit 7 is connected the magnitude of voltage that is used to gather thermistor R20 on the two ends of thermistor R20, the output terminal of voltage sampling circuit 7 connects the input end of A/D change-over circuit 8, and the output terminal of A/D change-over circuit 8 connects the input end of host computer 1; The program in the host computer 1 of operating in comprises the steps: to import the resistance value database (producer provides the resistance value data of this thermistor at each temperature spot to the consumer when buying thermistor) 001 of corresponding each temperature spot of thermistor R20; Host computer 1 is gathered this voltage drop of thermistor R20 constantly by voltage sampling circuit 7 and A/D change-over circuit 8, utilizes the magnitude of voltage of known power supply VAA and the resistance of the 21 resistance R 21 to try to achieve this resistance ￡ 002 of thermistor R20 constantly; From the resistance value database of corresponding each temperature spot of thermistor R20, find above and below resistance ￡ and with immediate adjacent resistance ￡ 1 and adjacent resistance ￡ 2 and the pairing temperature value thereof down of resistance ￡, determine the relative position of resistance ￡ between last adjacent resistance ￡ 1 and following adjacent resistance ￡ 2, utilize Lagrange interpolation formula to try to achieve this temperature value 003 of thermistor R20 constantly then.Present embodiment can provide environment temperature at that time when measuring transistorized parameters, make transistorized measurement more accurate, more complete.Other composition is identical with embodiment one with connected mode.
Claims (6)
1, transistor measuring instrument, it is characterized in that it comprises host computer (1), control module (2), measuring interface circuit (3) and tunable voltage dc power supply (4) forms, the communication port of host computer (1) is connected by the communication port of usb bus with control module (2), an output terminal of control module (2) connects the controlled end of tunable voltage dc power supply (4), another output terminal of control module (2) connects an input end measuring interface circuit (3), the output terminal of measuring interface circuit (3) connects the input end of control module (2), and the output terminal of tunable voltage dc power supply (4) connects the power end of measuring interface circuit (3).
2, transistor measuring instrument according to claim 1 is characterized in that control module (2) selects singlechip chip (U1) for use, and the pin 23 of singlechip chip (U1) is connected host computer (1) with pin 24 by usb bus.
3, transistor measuring instrument according to claim 2, it is characterized in that measuring interface circuit (3) by the 23 resistance (R23), the 24 resistance (R24), the 25 resistance (R25), a relay (J1), No. two relays (J2), No. three relays (J3), second diode (N2), the 3rd diode (N3), the 4th diode (N4) and slot (J6) are formed, one end of the 23 resistance (R23) connects the pin 19 of singlechip chip (U1), the other end of the 23 resistance (R23) connects the pin 2 of singlechip chip (U1) and the normally closed contact of a relay (J1), one end of the solenoid (K1) of a relay (J1) connects the negative electrode of power supply (VCC) and second diode (N2), the other end of solenoid (K1) connects the anode of second diode (N2) and the pin 8 of singlechip chip (U1), one end of the 24 resistance (R24) connects the pin 20 of singlechip chip (U1), the other end of the 24 resistance (R24) connects the pin 3 of singlechip chip (U1) and the normally closed contact of No. two relays (J2), one end of the solenoid (K2) of No. two relays (J2) connects the negative electrode of power supply (VCC) and the 3rd diode (N3), the other end of solenoid (K2) connects the anode of the 3rd diode (N3) and the pin 9 of singlechip chip (U1), one end of the 25 resistance (R25) connects the pin 21 of singlechip chip (U1), the other end of the 25 resistance (R25) connects the pin 4 of singlechip chip (U1) and the normally closed contact of No. three relays (J3), one end of the solenoid (K3) of No. three relays (J3) connects the negative electrode of power supply (VCC) and the 4th diode (N4), the other end of solenoid (K3) connects the static contact of 10, numbers relays of pin (J1) of the anode of the 4th diode (N4) and singlechip chip (U1), the static contact of the static contact of No. two relays (J2) and No. three relays (J3) is connected on three pins of slot (J6);
4, transistor measuring instrument according to claim 3, it is characterized in that tunable voltage dc power supply (4) is by transformer (T1), rectification circuit (U2), triode (Q1), first electric capacity (C1), second electric capacity (C2), the 5th diode (N5), the 30 resistance (R30), the 29 resistance (R29), the 28 resistance (R28), the 4th resistance (R4), the 5th resistance (R5) and the 6th resistance (R6) are formed, one end on the former limit of transformer (T1) connects the negative electrode of power supply (VCC) and the 5th diode (N5), the anode of the 5th diode (N5) connects an end of the 30 resistance (R30) and the collector of triode (Q1), the other end of the 30 resistance (R30) connects the other end on the former limit of transformer (T1), the base stage of triode (Q1) connects an end of the 29 resistance (R29) and an end of the 28 resistance (R28), the other end of the 29 resistance (R29) connects the emitter and the ground connection of triode (Q1), the other end of the 28 resistance (R28) connects the pin 17 of singlechip chip (U1), the two ends of transformer (T1) secondary connect two input ends of rectification circuit (U2) respectively, the cathode output end of rectification circuit (U2) connects the positive pole of first electric capacity (C1), one end of the positive pole of second electric capacity (C2) and the 4th resistance (R4), the cathode output end of rectification circuit (U2) connects the negative pole of first electric capacity (C1), the negative pole and the ground connection of second electric capacity (C2), the other end of the 4th resistance (R4) connects the normally opened contact of a relay (J1), the normally opened contact of No. two relays (J2), one end of the normally opened contact of No. three relays (J3) and the 5th resistance (R5), the other end of the 5th resistance (R5) connects the pin 5 of singlechip chip (U1) and an end of the 6th resistance (R6), the other end ground connection of the 6th resistance (R6).
5, transistor measuring instrument according to claim 4, it is characterized in that it also comprises warning circuit (6), warning circuit (6) is made up of the 3rd resistance (R3), field effect transistor (M11) and light emitting diode (N1), one end of the 3rd resistance (R3) connects an end of the 5th resistance (R5), the other end of the 3rd resistance (R3) connects the drain electrode of field effect transistor (M11), the source ground of field effect transistor (M11), the negative electrode of the grid sending and receiving optical diode (N1) of field effect transistor (M11), the pin 29 of the anode order sheet machine chip (U1) of light emitting diode (N1).
6, transistor measuring instrument according to claim 1, it is characterized in that it also comprises thermistor (R20), the 21 resistance (R21), voltage sampling circuit (7), A/D change-over circuit (8) and host computer (1), one termination power (VAA) of thermistor (R20), the other end of thermistor (R20) is by the 21 resistance (R21) ground connection, voltage sampling circuit (7) is connected the magnitude of voltage of gathering thermistor (R20) on the two ends of thermistor (R20), the output terminal of voltage sampling circuit (7) connects the input end of A/D change-over circuit (8), and the output terminal of A/D change-over circuit (8) connects the input end of host computer (1); The program in the host computer (1) of operating in comprises the steps: to import the resistance value database (001) of corresponding each temperature spot of thermistor (R20); Host computer (1) is gathered this voltage drop of thermistor (R20) constantly by voltage sampling circuit (7) and A/D change-over circuit (8), utilizes the magnitude of voltage of known power supply (VAA) and the resistance of the 21 resistance (R21) to try to achieve this resistance (￡) (002) of thermistor (R20) constantly; From the resistance value database of corresponding each temperature spot of thermistor (R20), find above and below resistance (￡) and with resistance (￡) is immediate and adjacent resistance (￡ 1) and descend adjacent resistance (￡ 2) and pairing temperature value thereof, determine the relative position of resistance (￡) between last adjacent resistance (￡ 1) and following adjacent resistance (￡ 2), utilize Lagrange interpolation formula to try to achieve this temperature value (003) of thermistor (R20) constantly then.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100099874A CN100370268C (en) | 2005-05-18 | 2005-05-18 | Transistor measuring instrument |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100099874A CN100370268C (en) | 2005-05-18 | 2005-05-18 | Transistor measuring instrument |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1693914A true CN1693914A (en) | 2005-11-09 |
| CN100370268C CN100370268C (en) | 2008-02-20 |
Family
ID=35352970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100099874A Expired - Fee Related CN100370268C (en) | 2005-05-18 | 2005-05-18 | Transistor measuring instrument |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100370268C (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101986167A (en) * | 2010-10-25 | 2011-03-16 | 北京佳讯飞鸿电气股份有限公司 | Method for quickly identifying and classifying triodes |
| CN102680845A (en) * | 2012-05-04 | 2012-09-19 | 深圳市连硕设备技术有限公司 | Polarity determining device of direct plug-in type two-pin semiconductor |
| CN105509787A (en) * | 2015-12-10 | 2016-04-20 | 浪潮电子信息产业股份有限公司 | Method for improving test stability of small-size metal oxide semiconductor field effect transistor |
| CN105911459A (en) * | 2016-07-05 | 2016-08-31 | 江苏奥雷光电有限公司 | Method for detecting TO tube insert direction |
| CN106771954A (en) * | 2017-03-09 | 2017-05-31 | 广州市昆德科技有限公司 | The capacitor voltage characteristic tester and its method of testing of automatic measurement are carried out to PN junction |
| CN110045259A (en) * | 2019-03-28 | 2019-07-23 | 武汉市毅联升科技有限公司 | A kind of LD-TO device aging system |
| CN113009310A (en) * | 2021-03-09 | 2021-06-22 | 南京大学 | Power device electrical parameter measuring circuit and measuring method |
| CN113805030A (en) * | 2021-09-24 | 2021-12-17 | 桂林航天工业学院 | Transistor parameter intelligent detection system based on singlechip |
| CN117269798A (en) * | 2023-11-22 | 2023-12-22 | 禹创半导体(深圳)有限公司 | Output stage reconnaissance circuit and method applied to judging type of external transistor |
| CN117761514A (en) * | 2023-12-29 | 2024-03-26 | 扬州江新电子有限公司 | High-voltage packaging polarity test circuit and test method thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58115372A (en) * | 1981-12-29 | 1983-07-09 | Fujitsu Ltd | Test circuit of semiconductor device |
| US4509012A (en) * | 1982-12-30 | 1985-04-02 | Lin Shi Tron | Method for determining the characteristic behavior of a metal-insulator-semiconductor device in a deep depletion mode |
| CN2042205U (en) * | 1988-03-02 | 1989-08-02 | 济南市半导体元件实验所 | Dual-purpose automatic/manual transistor tester |
| CN2100635U (en) * | 1990-12-07 | 1992-04-01 | 浙江大学 | Program-controlled multi-functional transistor testing and screening instrument |
| CN2107664U (en) * | 1991-03-29 | 1992-06-17 | 马军兴 | Semi-conductor tester |
| CN2177247Y (en) * | 1993-09-21 | 1994-09-14 | 陈棨华 | Transistor judging instrument |
| JP3682174B2 (en) * | 1998-11-04 | 2005-08-10 | 株式会社東芝 | Automatic breakdown voltage waveform classification system for semiconductor device and automatic breakdown voltage waveform classification method for semiconductor device |
| CN2793738Y (en) * | 2005-05-18 | 2006-07-05 | 黑龙江大学 | Transistor measuring equipment |
-
2005
- 2005-05-18 CN CNB2005100099874A patent/CN100370268C/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101986167A (en) * | 2010-10-25 | 2011-03-16 | 北京佳讯飞鸿电气股份有限公司 | Method for quickly identifying and classifying triodes |
| CN101986167B (en) * | 2010-10-25 | 2014-04-23 | 北京佳讯飞鸿电气股份有限公司 | Method for quickly identifying and classifying triodes |
| CN102680845A (en) * | 2012-05-04 | 2012-09-19 | 深圳市连硕设备技术有限公司 | Polarity determining device of direct plug-in type two-pin semiconductor |
| CN102680845B (en) * | 2012-05-04 | 2014-11-26 | 深圳连硕自动化科技有限公司 | Polarity determining device of direct plug-in type two-pin semiconductor |
| CN105509787A (en) * | 2015-12-10 | 2016-04-20 | 浪潮电子信息产业股份有限公司 | Method for improving test stability of small-size metal oxide semiconductor field effect transistor |
| CN105911459A (en) * | 2016-07-05 | 2016-08-31 | 江苏奥雷光电有限公司 | Method for detecting TO tube insert direction |
| CN106771954A (en) * | 2017-03-09 | 2017-05-31 | 广州市昆德科技有限公司 | The capacitor voltage characteristic tester and its method of testing of automatic measurement are carried out to PN junction |
| CN110045259B (en) * | 2019-03-28 | 2021-01-05 | 武汉市毅联升科技有限公司 | LD-TO device aging system |
| CN110045259A (en) * | 2019-03-28 | 2019-07-23 | 武汉市毅联升科技有限公司 | A kind of LD-TO device aging system |
| CN113009310A (en) * | 2021-03-09 | 2021-06-22 | 南京大学 | Power device electrical parameter measuring circuit and measuring method |
| CN113805030A (en) * | 2021-09-24 | 2021-12-17 | 桂林航天工业学院 | Transistor parameter intelligent detection system based on singlechip |
| CN113805030B (en) * | 2021-09-24 | 2023-09-05 | 桂林航天工业学院 | Transistor parameter intelligent detection system based on singlechip |
| CN117269798A (en) * | 2023-11-22 | 2023-12-22 | 禹创半导体(深圳)有限公司 | Output stage reconnaissance circuit and method applied to judging type of external transistor |
| CN117269798B (en) * | 2023-11-22 | 2024-03-15 | 禹创半导体(深圳)有限公司 | Output stage reconnaissance circuit and method applied to judging type of external transistor |
| CN117761514A (en) * | 2023-12-29 | 2024-03-26 | 扬州江新电子有限公司 | High-voltage packaging polarity test circuit and test method thereof |
| CN117761514B (en) * | 2023-12-29 | 2024-05-31 | 扬州江新电子有限公司 | High-voltage packaging polarity test circuit and test method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100370268C (en) | 2008-02-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100370268C (en) | Transistor measuring instrument | |
| CN202693755U (en) | Comprehensive test device for integrated circuit | |
| CN106707158A (en) | Time relay calibration device and calibration method thereof | |
| CN2793738Y (en) | Transistor measuring equipment | |
| CN201277992Y (en) | Full automatic digital multi-purpose meter | |
| CN204789761U (en) | Relay contact resistance measuring device | |
| CN109975689A (en) | A kind of integrated circuit IO characteristic intelligent tester | |
| CN201014993Y (en) | Testing circuit improvement for PCB tester | |
| CN203084152U (en) | Triode transistor characteristic parameter testing system | |
| CN201514470U (en) | Switch power supply testing instrument | |
| CN204649852U (en) | A kind of improved automatic Multifunctional transformation ratio test device | |
| CN201037857Y (en) | Device for testing output current of charger | |
| CN202110204U (en) | Digital voltmeter power supply with automatic start and stop function and automatic identification function of alternating current and direct current | |
| CN101977347A (en) | Measuring method and measuring circuit for temperature rise of voice coil of dynamic speaker | |
| CN102116825A (en) | Electric property comprehensive tester for solar junction box | |
| CN211123230U (en) | Portable automatic debugging system for calibrator | |
| CN203705564U (en) | Multipath LCR digital bridge system | |
| CN202033615U (en) | Simulating and debugging box for servo control system | |
| CN214251069U (en) | Automatic testing arrangement of smart meter | |
| CN203241737U (en) | Intelligent motor timing controller | |
| CN202093066U (en) | Constant-current source device | |
| CN207601291U (en) | A kind of DC voltage transmitter calibrated using digital form | |
| CN205068076U (en) | Battery data acquisition device | |
| CN203761365U (en) | Power frequency measuring signal conversion circuit | |
| CN204330990U (en) | Multifunctional repairing instrument circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080220 Termination date: 20110518 |