CN113009310A - Power device electrical parameter measuring circuit and measuring method - Google Patents
Power device electrical parameter measuring circuit and measuring method Download PDFInfo
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- CN113009310A CN113009310A CN202110255859.7A CN202110255859A CN113009310A CN 113009310 A CN113009310 A CN 113009310A CN 202110255859 A CN202110255859 A CN 202110255859A CN 113009310 A CN113009310 A CN 113009310A
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- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000012360 testing method Methods 0.000 claims abstract description 24
- 239000003990 capacitor Substances 0.000 claims abstract description 7
- 238000004146 energy storage Methods 0.000 claims abstract description 7
- 230000008054 signal transmission Effects 0.000 claims abstract description 4
- 238000004804 winding Methods 0.000 claims description 18
- 238000005259 measurement Methods 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000004907 flux Effects 0.000 abstract description 2
- 238000012512 characterization method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2637—Circuits therefor for testing other individual devices
Abstract
The invention discloses a measuring circuit and a measuring method for electrical parameters of a power device, wherein the measuring circuit comprises: a signal control circuit and a parameter measuring circuit; the signal control circuit comprises a direct current DC power supply, an energy storage capacitor C1, a transformer primary coil T1 and a control triode Q2; the parameter measuring circuit comprises a transformer secondary coil T2, a protection diode D2, a switch S1, a switch S2, a triode to be tested Q1 and a diode to be tested D1; the signal control circuit and the parameter measuring circuit complete signal transmission through the transformer T. When the current signal flows through the primary coil of the transformer, the alternating current flux generated in the magnetic core of the transformer induces pulse voltage and pulse current in the secondary coil, and the induced pulse current signal can flow through the power device to be tested which is connected in the secondary coil in series, so that the I-V electrical characteristic of the power device to be tested can be obtained; the operation is flexible, and the cost is low; the test range is expanded, and the test efficiency is improved.
Description
Technical Field
The invention relates to a circuit and a method for measuring electrical parameters of a power device, and belongs to the technical field of electronic circuits.
Background
As a core unit for realizing switching control and energy conversion in a semiconductor device, power electronic devices are often built in power modules such as a converter and an inverter, and are used for circuit rectification, power amplification, frequency conversion/voltage transformation, and the like, and have the advantages of low power consumption, energy conservation, and the like. In practical applications, product engineers often refer to device product datasheet manuals by selecting appropriate target devices by comparing electrical parameters of different devices. Therefore, it is important to select or design a suitable electrical parameter measurement method to characterize the performance of power devices with different characteristics and structures. For example, an electrical voltage-current curve (I-V curve) is a key electrical index for extracting a nominal voltage or current level of a device, and a variation trend of current along with voltage also reflects an internal resistance variation of the device, so that a conduction loss and a power optimal value of the device can be further calculated.
The I-V curve characterization commonly used in the industry at present is based on the fast pulse scanning of a KEYSIGHT B1505A power device analyzer, and current-voltage modules such as HCSMU, MCSMU, UHC and UHV are built in the I-V curve characterization. With the dual HCSMU combination adapter, B1505A is rated for a maximum pulse current of 40A, which is a relatively low cost configuration. If an ultra high current spreader and package socket of N1265A is used, the pulse current can reach 500A and there is no other product between current 40A and 500A. Therefore, when the maximum current of the power device is 100A, the 500A test unit must be used for electrical parameter characterization, the cost is greatly increased by providing an ultra-high current test unit, and the practical upper limit may be far lower than the test limit, which results in resource waste.
Therefore, a simple and accurate I-V electrical curve test circuit is designed for representing the electrical parameters of the power device, the cost is reduced, the upper limit of the test can be flexibly adjusted according to the actual situation, and the test resources are reasonably utilized.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a circuit and a method for measuring electrical parameters of a power device. The primary side of the transformer generates pulse conducting current by using a switch, and when a current signal flows through a primary coil of the transformer, alternating current magnetic flux generated in a magnetic core of the transformer promotes a secondary coil to induce pulse voltage and pulse current; the induced pulse current signal can flow through the power device to be tested which is connected in series in the secondary coil, so that the I-V electrical characteristics of the power device to be tested can be obtained; the pulse period and the pulse amplitude of the pulse current signal can be changed according to the characteristics of the power device, so that the operation is flexible and the cost is low; meanwhile, a power triode and a power diode are integrated in the test circuit, so that the test range is expanded, and the test efficiency is improved.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a power device electrical parameter measuring circuit comprises a signal control circuit and a parameter measuring circuit; the signal control circuit and the parameter measuring circuit complete signal transmission through the transformer T;
the signal control circuit comprises a direct current DC power supply, an energy storage capacitor C1, a transformer primary coil T1 and a control triode Q2; the energy storage capacitor C1 is connected in parallel at two ends of the direct current DC power supply; one end of a primary coil T1 of the transformer is connected with the anode of the DC power supply, the other end of the primary coil T1 of the transformer is connected with the drain electrode of a control triode Q2, and the source electrode of the control triode Q2 is connected with the cathode of the DC power supply;
the parameter measuring circuit comprises a transformer secondary coil T2, a protection diode D2, a switch S1, a switch S2, a triode to be tested Q1 and a diode to be tested D1; one end of a secondary coil T2 of the transformer is connected with the anode of a protection diode D2, one end of a switch S1 and one end of a switch S2 are connected with the cathode of the protection diode D2 in parallel, the drain of a triode to be tested Q1 is connected with the other end of a switch S1, the anode of a diode to be tested D1 is connected with the other end of the switch S2, and the source of a triode to be tested Q1 and the cathode of the diode to be tested D1 are connected with the other end of the secondary coil T2 in parallel.
The on and off of the triode to be tested Q1 and the control triode Q2 are driven and controlled by the front stage. Preferably, the pre-driver uses a Si827x driver chip manufactured by SILICON LABS corporation.
In order to prevent the circuit current from saturating, the control transistor Q2 is a high-current silicon carbide transistor, and the protection diode D2 is a high-voltage silicon carbide diode.
The parameter measuring circuit comprises two measuring loops, namely a triode to be measured measuring loop and a diode to be measured measuring loop; the secondary side coil T2, the protection diode D2, the switch S1 and the triode to be tested Q1 form a triode to be tested measurement loop; the secondary side coil T2, the protection diode D2, the switch S2 and the diode D1 to be tested form a diode measurement loop to be tested.
The method for measuring the electrical parameters of the power device by using the electrical parameter measuring circuit of the power device comprises the following steps:
1) when a measuring loop of the triode to be measured is formed, the switch S1 is switched on, and the switch S2 is switched off;
2) when a measurement loop of the diode to be measured is formed, the switch S1 is turned off, and the switch S2 is turned on.
By using the measurement method, the electrical characteristic parameters of the power device to be measured are obtained:
1) when the triode Q2 is controlled to be switched on, the current flowing through the primary coil T1 is I1, the number of turns of the primary coil is N1, the number of turns of the secondary coil is N2, and the current of the secondary coil is I2 according to a transformer formula I1/I2-N2/N1, wherein the current value is the current value of the power device to be detected;
2) when the control triode Q2 is switched on, the voltage induced by the primary coil T1 of the transformer is V1, the number of turns of the primary coil T1 of the transformer is N1, the number of turns of the secondary coil T2 of the transformer is N2, and the voltage of the secondary coil T2 of the transformer is V2 according to a transformer formula V1/V2-N1/N2;
3) simultaneously, a voltage waveform of the protection diode D2 is captured by using an oscilloscope, and the voltage value of the power device to be tested is the difference value of the voltage V2 of the secondary side coil and the conduction voltage drop of the protection diode D2;
4) and obtaining an I-V curve of the power device to be tested according to the current value and the voltage value of the power device to be tested, so as to research the electrical characteristics of the device.
The prior art is referred to in the art for techniques not mentioned in the present invention.
The invention has the following beneficial effects:
(1) the invention measures the electrical I-V characteristic of the power device to be tested by adjusting the secondary current value and the voltage value of the transformer, has simple operation, does not need an additional test unit and reduces the test cost.
(2) The invention can respectively test the power triode and the power diode, thereby enlarging the test range and improving the test efficiency.
(3) The protection diode is integrated in the test circuit, so that the circuit oscillation is effectively inhibited, and the power device to be tested is protected.
Drawings
FIG. 1 is a circuit diagram of the power device of the present invention for measuring electrical parameters;
FIG. 2 is a control transistor Q2 pulse trigger waveform according to the present invention;
FIG. 3 is a schematic voltage waveform of the DUT according to the present invention;
FIG. 4 is a schematic diagram of a current waveform of a power device under test according to the present invention;
FIG. 5 is a schematic diagram of I-V electrical parameters of a power device to be tested according to the present invention;
Detailed Description
In order to better understand the present invention, the following examples are further provided to illustrate the present invention, but the present invention is not limited to the following examples.
As shown in fig. 1, a power device electrical parameter measuring circuit includes: a signal control circuit and a parameter measuring circuit; the signal control circuit and the parameter measuring circuit complete signal transmission through the transformer T; the signal control circuit comprises a direct current DC power supply, an energy storage capacitor C1, a transformer primary coil T1 and a control triode Q2; the energy storage capacitor C1 is connected in parallel at two ends of the direct current DC power supply; one end of a primary coil T1 of the transformer is connected with the anode of the DC power supply, the other end of the primary coil T1 is connected with the drain electrode of a control triode Q2, and the source electrode of the control triode Q2 is connected with the cathode of the DC power supply; the parameter measuring circuit comprises a transformer secondary coil T2, a protection diode D2, a switch S1, a switch S2, a triode to be tested Q1 and a diode to be tested D1; one end of a secondary coil T2 of the transformer is connected with the anode of a protection diode D2, one end of a switch S1 and one end of a switch S2 are connected with the cathode of the protection diode D2 in parallel, the drain electrode of a triode to be tested Q1 is connected with the other end of a switch S1, the anode of a diode to be tested D1 is connected with the other end of the switch S2, and the source electrode of a triode to be tested Q1 and the cathode of the diode to be tested D1 are connected with the other end of the secondary coil T2 of the transformer in parallel; the on and off of the triode Q1 to be tested and the control triode Q2 are driven and controlled by a front stage; the front-end driver adopts Si827x driver chip manufactured by SILICON LABS company.
As shown in fig. 2, after the control transistor Q2 is turned on, 1) the current flowing through the primary winding T1 of the transformer is I1, and the current flowing through the secondary winding T2 of the transformer is I2 obtained by combining the fact that the number of turns of the primary winding T1 of the transformer is N1 and the number of turns of the secondary winding T2 of the transformer is N2 according to the formula I1/I2-N2/N1 of the transformer, as shown in fig. 4; 2) the voltage induced by the primary winding T1 of the transformer is V1, the number of turns of the primary winding T1 of the transformer is N1, the number of turns of the secondary winding T2 of the transformer is N2, the voltage of the secondary winding T of the transformer is V2 according to a transformer formula V1/V2-N1/N2, the voltage of the protective diode D2 is captured by an oscilloscope at the same time, and the voltage value of the power device to be tested is the difference between the voltage of the secondary winding T2, V2 of the transformer and the conduction voltage drop of the protective diode D2, as shown in fig. 3;
as shown in fig. 5, the I-V curve of the power device to be tested is obtained from the current value and the voltage value of the power device to be tested, so as to study the electrical characteristics of the device.
Table 1 shows the comparison between the electrical parameter testing method of the power device in this embodiment and the conventional B1505A tester.
| Current test range | Cost of | |
| The test method of the embodiment | 0A—200A | ＜1000￥ |
| B1505A tester | 0A—40A | ＞300,000￥ |
As can be seen from table 1, the current test range of the power device in this embodiment is higher than that of the B1505A tester, and the cost is much lower than that of the B1505A tester, which indicates that the test method in this embodiment can reduce the cost and expand the test range.
Claims (10)
1. A power device electrical parameter measuring circuit is characterized in that: the device comprises a signal control circuit and a parameter measuring circuit; the signal control circuit and the parameter measuring circuit complete signal transmission through the transformer T;
the signal control circuit comprises a direct current DC power supply, an energy storage capacitor C1, a transformer primary coil T1 and a control triode Q2; the energy storage capacitor C1 is connected in parallel at two ends of the direct current DC power supply; one end of a primary coil T1 of the transformer is connected with the anode of the DC power supply, the other end of the primary coil T1 of the transformer is connected with the drain electrode of a control triode Q2, and the source electrode of the control triode Q2 is connected with the cathode of the DC power supply;
the parameter measuring circuit comprises a transformer secondary coil T2, a protection diode D2, a switch S1, a switch S2, a triode to be tested Q1 and a diode to be tested D1; one end of a secondary coil T2 of the transformer is connected with the anode of a protection diode D2, one end of a switch S1 and one end of a switch S2 are connected with the cathode of the protection diode D2 in parallel, the drain of a triode to be tested Q1 is connected with the other end of a switch S1, the anode of a diode to be tested D1 is connected with the other end of the switch S2, and the source of a triode to be tested Q1 and the cathode of the diode to be tested D1 are connected with the other end of the secondary coil T2 in parallel.
2. The power device electrical parameter measuring circuit according to claim 1, wherein the parameter measuring circuit comprises two measuring loops, namely a triode to be measured measuring loop and a diode to be measured measuring loop; the secondary side coil T2, the protection diode D2, the switch S1 and the triode to be tested Q1 form a triode to be tested measurement loop; the secondary side coil T2, the protection diode D2, the switch S2 and the diode D1 to be tested form a diode measurement loop to be tested.
3. The power device electrical parameter measurement circuit of claim 1 or 2, wherein the transistor Q1 to be tested and the control transistor Q2 are controlled by the previous stage driving.
4. The circuit for measuring electrical parameters of power device according to claim 3, wherein the pre-driver uses Si827x driver chip manufactured by SILICON LABS.
5. The power device electrical parameter measurement circuit according to claim 1 or 2, wherein: the control transistor Q2 is a high-current silicon carbide transistor, and the protection diode D2 is a high-voltage silicon carbide diode.
6. A method for measuring electrical parameters of a power device by using the electrical parameter measuring circuit of the power device as claimed in any one of claims 1 to 5, wherein: when a measuring loop of the triode to be measured is formed, the switch S1 is switched on, and the switch S2 is switched off; when a measurement loop of the diode to be measured is formed, the switch S1 is turned off, and the switch S2 is turned on.
7. The method as claimed in claim 6, wherein when the control transistor Q2 is turned on, the current of the primary winding T1 of the transformer is I1, and when the number of turns of the primary winding T1 of the transformer is N1 and the number of turns of the secondary winding T2 of the transformer is N2, the current of the secondary winding is I2 according to the formula I1/I2-N2/N1, and the current value is the current value of the power device to be tested.
8. The method of claim 7 wherein the voltage induced in the primary winding T1 of the transformer is V1 when the transistor Q2 is turned on, and the voltage induced in the secondary winding T2 of the transformer is V2 when the number of turns of the primary winding T1 of the transformer is N1 and the number of turns of the secondary winding T2 of the transformer is N2 according to the transformer formula V1/V2-N1/N2.
9. The method of claim 8, wherein an oscilloscope is used to capture the voltage waveform of the protection diode D2, and the voltage value of the power device to be tested is the difference between the secondary winding voltage V2 and the conduction voltage drop of the protection diode D2.
10. The method of claim 9, wherein the I-V curve of the power device under test is obtained according to the current value and the voltage value of the power device under test.
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| CN202110255859.7A CN113009310A (en) | 2021-03-09 | 2021-03-09 | Power device electrical parameter measuring circuit and measuring method |
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| CN202110255859.7A CN113009310A (en) | 2021-03-09 | 2021-03-09 | Power device electrical parameter measuring circuit and measuring method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113740696A (en) * | 2021-09-26 | 2021-12-03 | 上海陆芯电子科技有限公司 | Testing device and testing method for power diode |
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2021
- 2021-03-09 CN CN202110255859.7A patent/CN113009310A/en active Pending
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