CN1691090A - Two-dimensional display panel construction and manufacturing method thereof - Google Patents
Two-dimensional display panel construction and manufacturing method thereof Download PDFInfo
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- CN1691090A CN1691090A CN 200410036843 CN200410036843A CN1691090A CN 1691090 A CN1691090 A CN 1691090A CN 200410036843 CN200410036843 CN 200410036843 CN 200410036843 A CN200410036843 A CN 200410036843A CN 1691090 A CN1691090 A CN 1691090A
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Abstract
The invention concerns panel structure and preparation method for plan display. The structure comprises a base plate, an active array structure and a drive circuit structure; the preparation method comprises follows steps: supply a base plate and form an active array structure and a drive circuit structure on it; wherein, active array structure comprises a first semiconductor layer; drive circuit structure comprises a second semiconductor layer with larger grain size than the first semiconductor layer.
Description
Technical field
The present invention is a kind of flat display panel structure and manufacture method, refers to a kind of active type matrix organic led display pannel structure and manufacture method especially.
Background technology
See also Fig. 1, it is a present known active type matrix organic led (ActiveMatrix Organic Light-Emitting Diode, abbreviation AMOLED) pixel (Pixel) the driving circuit synoptic diagram in the display, each pixel of known active type matrix organic led display is combined by electric capacity of two transistors (2TlC).Wherein, transistor M1 grid is coupled to grid-control circuit (Gate Line) 10, and two ends then are coupled to data circuit (Data Line) 20 and transistor M2 grid respectively in addition.Transistor M2 source electrode is coupled to power supply (Vdd), and it is extreme that drain electrode is coupled to Organic Light Emitting Diode (OLED) P.Organic Light Emitting Diode (OLED) N extremely then is connected to ground voltage (GND).Capacitor C s is coupled between transistor M2 source electrode and the grid.And when 10 actions of grid-control circuit, transistor M1 can be considered a switch (Switch) and opens (On), and this moment, driving voltage can and be stored among the capacitor C s apace by data circuit 20 inputs.In driving voltage input capacitance Cs, this driving voltage can produce bias voltage (Bias) to transistor M2, so fixed current Id can pass through Organic Light Emitting Diode (OLED), makes that Organic Light Emitting Diode (OLED) is luminous.
From the above, the organic light-emitting diode pixel driving circuit of Fig. 1 is a driven.Utilize driving voltage to make transistor M2 produce bias voltage, and make Organic Light Emitting Diode (OLED) luminous.Because for peripheral circuit is integrated in the display, so the transistor of the pixel-driving circuit of present most Organic Light Emitting Diode (OLED) display all is to utilize low temperature polycrystalline silicon (Low TemperaturePoly-Silicon, LTPS) thin film transistor (TFT) finished of technology (Thin Film Transistor, TFT).Yet, owing to the polysilicon of being finished with traditional low temperature polycrystalline silicon technology, its grain size is wayward, therefore be the thin film transistor (TFT) that base material is finished with the polysilicon, on same substrate but the critical voltage of the thin film transistor (TFT) of zones of different (Threshold Voltage) and mobility (Mobility) just have variation to a certain degree, even so will cause the driving voltage of input capacitance Cs identical, but produce the electric current of different sizes, the electric current that causes Organic Light Emitting Diode (OLED) to be received produces variation, so will seriously cause the uneven phenomenon of panel luminous intensity.
Summary of the invention
The present invention proposes a kind of flat display panel manufacture method, and it comprises the following step at least: a substrate is provided; Form an active matrix structure and one drive circuit structure on substrate, wherein active matrix structure includes one first semiconductor layer, driving circuit structure includes one second semiconductor layer, and the crystallite dimension of second semiconductor layer is greater than the crystallite dimension of this first semiconductor layer.
According to above-mentioned conception, flat display panel manufacture method of the present invention, wherein first semiconductor layer is a microcrystal silicon layer, and second semiconductor layer is a polysilicon layer.
According to above-mentioned conception, flat display panel manufacture method of the present invention, wherein the first semiconductor layer thickness is less than the thickness of second semiconductor layer.
According to above-mentioned conception, flat display panel manufacture method of the present invention, wherein active matrix structure is an active type matrix organic led structure.
Another aspect of the present invention proposes a kind of flat display panel manufacture method, and it comprises the following step at least: a substrate is provided; Form an original semiconductor layer on substrate, wherein original semiconductor layer has a first area and a second area; And original semiconductor layer is carried out one grow brilliant technology, and then in first area and second area, form one first semiconductor layer and one second semiconductor layer respectively, and the crystallite dimension of second semiconductor layer is greater than first semiconductor layer; And utilize first semiconductor layer and second semiconductor layer to finish an active matrix structure and one drive circuit structure in the flat display panel respectively.
According to above-mentioned conception, flat display panel manufacture method of the present invention, wherein first semiconductor layer is a microcrystal silicon layer, and second semiconductor layer is a polysilicon layer.
According to above-mentioned conception, flat display panel manufacture method of the present invention, wherein the first semiconductor layer thickness is less than second semiconductor layer.
According to above-mentioned conception, flat display panel manufacture method of the present invention, wherein active matrix structure is an active type matrix organic led structure.
According to above-mentioned conception, flat display panel manufacture method of the present invention, wherein original semiconductor layer is an amorphous silicon layer, and the first area is different with the thickness of second area, wherein the thickness of first area is less than the thickness of second area.
According to above-mentioned conception, flat display panel manufacture method of the present invention, wherein original semiconductor layer is a microcrystal silicon layer, and only second area is carried out a long brilliant technology, and then forms microcrystal silicon layer and polysilicon layer in first area and second area respectively.
According to above-mentioned conception, flat display panel manufacture method of the present invention, wherein original semiconductor layer is the uniform amorphous silicon layer of a thickness, and long brilliant technology is respectively at carrying out one first long brilliant technology and one second long brilliant technology in first area and the second area, and the energy per unit area that the brilliant technology of first length offers the first area greater than the brilliant technology of second length offer second area and energy per unit area.
According to above-mentioned conception, flat display panel manufacture method of the present invention, wherein long brilliant technology can be solid-phase crystallization method (Solid Phase Crystallization, SPC), excimer laser tempering (ExcimerLaser Anneal, ELA) or continous way lateral solidification method (Sequential Lateral Solidification, SLS).
Of the present invention is a kind of display pannel structure more on the one hand, and it comprises at least: a substrate; One active matrix structure is formed on the substrate, and it includes one first semiconductor layer; And the one drive circuit structure, being formed on the substrate, it includes one second semiconductor layer, and the crystallite dimension of second semiconductor layer is greater than first semiconductor layer.
According to above-mentioned conception, display pannel structure of the present invention, wherein first semiconductor layer is a microcrystal silicon layer, and second semiconductor layer is a polysilicon layer.According to above-mentioned conception, flat display panel structure of the present invention, wherein this active matrix structure is an active type matrix organic led structure.
According to above-mentioned conception, display pannel structure of the present invention, wherein substrate is a transparent substrates.
According to above-mentioned conception, display pannel structure of the present invention, wherein substrate is a glass substrate, quartz base plate or plastic substrate.
Description of drawings
The present invention is by means of following graphic and detailed description, to obtain more deep understanding:
Fig. 1 is the pixel-driving circuit synoptic diagram in present known active type matrix organic led (AMOLED) display;
Fig. 2 is next active type matrix organic led (AMOLED) display pannel tectonic profile synoptic diagram proposed by the invention;
Fig. 3 (a) (b) (c) is the first preferred embodiment processing step synoptic diagram of making the present invention structure;
Fig. 4 (a) (b) (c) is the second preferred embodiment processing step synoptic diagram of making the present invention structure;
Fig. 5 (a) (b) (c) is the 3rd preferred embodiment processing step synoptic diagram of making the present invention structure.
Description of reference numerals is as follows:
Grid-control circuit 10 data circuits 20
Second semiconductor layer, 221 glass substrates 30
Cushion 301 original semiconductor layers 31
First area 311 second areas 312
First semiconductor layer, 321 second semiconductor layers 322
Active matrix structure 33 driving circuit structures 34
Second semiconductor layer, 422 active matrix structures 43
Driving circuit structure 44 glass substrates 50
Cushion 501 original semiconductor layers 51
First area 511 second areas 512
First semiconductor layer, 521 second semiconductor layers 522
Embodiment
See also Fig. 2, it is active type matrix organic led (ActiveMatrix Organic Light-Emitting Diode proposed by the invention, be called for short AMOLED) display pannel tectonic profile synoptic diagram, it consists predominantly of a substrate 20, its top is formed with an active matrix structure 21 and one drive circuit structure 22, and active matrix structure 21 is that main body is finished with one first semiconductor layer 211, is that main body is finished as for 22 of driving circuit structures with one second semiconductor layer 221, and the crystallite dimension of second semiconductor layer 221 is greater than first semiconductor layer 211.For instance, first semiconductor layer 211 and second semiconductor layer 221 can be respectively microcrystal silicon layer (Micro-silicon layer) and polysilicon layer (Poly-silicon layer).Thus, with the microcrystal silicon is the active matrix structure 21 that base material is finished, the critical voltage (Threshold Voltage) of its interior each thin film transistor (TFT) and the degree of variation of mobility (Mobility) be Be Controlled effectively, and then can improve the uneven phenomenon of panel luminous intensity.But because driving circuit structure 22 is more insensitive with the degree of variation of mobility (Mobility) for critical voltage (Threshold Voltage), therefore still be that base material is finished above-mentioned circuit component with the polysilicon, thus, each thin film transistor (TFT) of driving circuit structure 22 inside still can be kept and electrically produce driving force preferably preferably.
See also Fig. 3 (a) (b) (c) again, it is the processing step synoptic diagram of first preferred embodiment of the present invention, Fig. 3 (a) expression provides a glass substrate 30 earlier, and then deposition cushion 301 is the original semiconductor layer 31 of amorphous silicon with material on substrate 30, Fig. 3 (b) is shown in original semiconductor layer 31 to carry out the photoengraving carving technology and defines a first area 311 and a second area 312, and wherein the thickness of first area 311 is less than the thickness of second area 312.Again the long brilliant technology of a laser is carried out with second area 312 in the first area 311 of original semiconductor layer 31 subsequently, suitably control the size of laser energy, make the amorphous silicon in the first area 311 to be melted fully by laser, but because of the amorphous silicon thickness of second area 312 bigger, therefore the amorphous silicon that receives the second area 312 of same laser energy density will present the state that partly melts, thus, in the long brilliant process of cooling subsequently, small first semiconductor layer 321 that microcrystal silicon constituted of crystal grain will be formed in the first area 311, and huger second semiconductor layer 322 that polysilicon constituted of crystal grain will be formed in the second area 312.And utilize first semiconductor layer 321 and second semiconductor layer 322 to finish required active matrix structure 33 and one drive circuit structure 34 (shown in Fig. 3 (c)) respectively subsequently more respectively.Can utilize solid-phase crystallization method (Solid PhaseCrystallization as for the long brilliant technology of laser, SPC), excimer laser tempering (Excimer Laser Anneal, ELA) or continous way lateral solidification method (Sequential Lateral Solidification, SLS) etc. technology is finished.
See also Fig. 4 (a) (b) (c) again, it is the processing step synoptic diagram of second preferred embodiment of the present invention, Fig. 4 (a) expression provides a glass substrate 40 earlier, and then to deposit cushion 401 thereon be the original semiconductor layer 41 of microcrystal silicon with material, Fig. 4 (b) only then expresses the long brilliant technology (shown in arrow) of a laser is carried out in part zone 422 in the original semiconductor layer 41, make the microcrystal silicon in the zone can grow brilliant again and the huger polysilicon of formation crystal grain, so can form first semiconductor layer 421 and second semiconductor layer 422 that material is respectively microcrystal silicon and polysilicon.And utilize first semiconductor layer 421 and second semiconductor layer 422 to finish required active matrix structure 43 and one drive circuit structure 44 (shown in Fig. 4 (c)) respectively subsequently more respectively.Similarly, the long brilliant technology of laser can utilize technologies such as SPC, ELA or SLS to finish.
See also Fig. 5 (a) (b) (c) again, it is the processing step synoptic diagram of the 3rd preferred embodiment of the present invention, Fig. 5 (a) expression provides a glass substrate 50 earlier, and then deposition cushion 501 is the original semiconductor layer 51 of amorphous silicon with material on substrate 50, Fig. 5 (b) then expresses respectively and to carry out long brilliant technology L1 of one first laser and the long brilliant technology L2 of one second laser on the first area in the original semiconductor layer 51 511 and the second area 512, and the long brilliant technology L1 of first laser offers the energy per unit area of first area 511 offers second area 512 greater than the brilliant technology L2 of second laser length energy per unit area.For instance, available with the long brilliant technology of a kind of laser but give different laser energies in zones of different, or utilize two long brilliant technologies of different types of laser, for example the first laser crystallization technology L1 and the second laser crystallization technology L2 are respectively ELA or SLS.Thus, can make the amorphous silicon in the first area 511 to be melted fully by laser, but because of the amorphous silicon of second area 512 then presents the state that partly melts, make in the process of crystallisation by cooling subsequently, small first semiconductor layer 521 that microcrystal silicon constituted of crystal grain will be formed in the first area 511, and huger second semiconductor layer 522 that polysilicon constituted of crystal grain will be formed in the second area 512.And utilize first semiconductor layer 521 and second semiconductor layer 522 to finish required active matrix structure 53 and one drive circuit structure 54 (shown in Fig. 4 (c)) respectively subsequently more respectively.
In sum, the present invention finishes active matrix structure and driving circuit structure respectively with the base material of different qualities, thus, each thin film transistor (TFT) of driving circuit structure inside still can be kept and electrically produce driving force preferably preferably, but the current driving ability of each thin film transistor (TFT) is then more consistent in the active matrix structure, so can effectively improve and commonly use the uneven phenomenon of panel luminous intensity, and then reach development fundamental purpose of the present invention.And means of the present invention can be widely used in any flat-panel screens pixel cell that utilizes current drives; and be not limited only to the illustrational Organic Light Emitting Diode of the present invention (OrganicLight-Emitting Diode; be called for short OLED) display; execute that the craftsman thinks and be to modify as all so the present invention must be appointed by those skilled in the art, but neither disengaging is as the desire protection of claim institute.
Claims (12)
1. display pannel manufacture method, it comprises the following step at least:
One substrate is provided;
Form an active matrix structure in this substrate top, wherein this active matrix structure includes one first semiconductor layer; And
Form the one drive circuit structure in this substrate top, this driving circuit structure includes one second semiconductor layer, and wherein the crystallite dimension of this second semiconductor layer is greater than the crystallite dimension of this first semiconductor layer.
2. display pannel manufacture method as claimed in claim 1, wherein this first semiconductor layer is a microcrystal silicon layer, and this second semiconductor layer is a polysilicon layer.
3. display pannel manufacture method, it comprises the following step at least:
One substrate is provided;
Form an original semiconductor layer in this substrate top, wherein this original semiconductor layer has a first area and a second area; And
This part or all of original semiconductor layer is carried out the brilliant technology of at least one length, make to form one first semiconductor layer and one second semiconductor layer in this first area and this second area respectively, and the crystallite dimension of this second semiconductor layer is greater than the crystallite dimension of this first semiconductor layer.
4. display pannel manufacture method as claimed in claim 3, wherein this first semiconductor layer and this second semiconductor layer form an active matrix structure and one drive circuit structure, and this first semiconductor layer is a microcrystal silicon layer, and this second semiconductor layer is a polysilicon layer.
5. display pannel manufacture method as claimed in claim 3, wherein the thickness of this first semiconductor layer is less than the thickness of this second semiconductor layer.
6. display pannel manufacture method as claimed in claim 3, wherein this original semiconductor layer is an amorphous silicon layer, and this first area is different with the thickness of this second area, wherein the thickness of this first area is less than the thickness of this second area.
7. display pannel manufacture method as claimed in claim 3, wherein this original semiconductor layer is a microcrystal silicon layer, and only this second area is carried out a long brilliant technology, and then in this first area and this second area, form this microcrystal silicon layer and this polysilicon layer respectively.
8. display pannel manufacture method as claimed in claim 3, wherein this original semiconductor layer is the uniform amorphous silicon layer of a thickness, and the brilliant technology of this length is grown brilliant technology and one second long brilliant technology respectively at carrying out one first in this first area and this second area, and this first long brilliant technology offers the energy per unit area of this first area offers this second area greater than this second long brilliant technology energy per unit area.
9. flat display panel manufacture method as claimed in claim 3, wherein the brilliant technology of this length can be solid-phase crystallization method, excimer laser tempering or continous way lateral solidification method.
10. a display pannel is constructed, and it comprises:
One substrate;
One active matrix structure is formed at this substrate top, includes one first semiconductor layer; And
The one drive circuit structure is formed at this substrate top, includes one second semiconductor layer, and wherein the crystallite dimension of this second semiconductor layer is greater than the crystallite dimension of this first semiconductor layer.
11. display pannel structure as claimed in claim 10, wherein this first semiconductor layer is a microcrystal silicon layer, and this second semiconductor layer is a polysilicon layer.
12. display pannel structure as claimed in claim 10, wherein this first semiconductor layer thickness is less than the thickness of this second semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100368433A CN100423043C (en) | 2004-04-21 | 2004-04-21 | Two-dimensional display panel construction and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100368433A CN100423043C (en) | 2004-04-21 | 2004-04-21 | Two-dimensional display panel construction and manufacturing method thereof |
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| CN1691090A true CN1691090A (en) | 2005-11-02 |
| CN100423043C CN100423043C (en) | 2008-10-01 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101071793B (en) * | 2006-05-11 | 2010-06-23 | 统宝光电股份有限公司 | Flat panel display and fabrication method thereof |
| CN102844852A (en) * | 2009-12-15 | 2012-12-26 | 爱克西可法国公司 | Method for making semiconductor device by laser irradiation |
| WO2016155056A1 (en) * | 2015-03-27 | 2016-10-06 | 深圳市华星光电技术有限公司 | Low temperature polysilicon tft substrate structure and manufacturing method therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0563172A (en) * | 1991-09-02 | 1993-03-12 | Hitachi Ltd | Semiconductor device and its manufacture |
| JPH11265000A (en) * | 1998-03-18 | 1999-09-28 | Toshiba Corp | Liquid crystal display device and its manufacture |
| TWI244571B (en) * | 2002-01-30 | 2005-12-01 | Sanyo Electric Co | Semiconductor display device |
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2004
- 2004-04-21 CN CNB2004100368433A patent/CN100423043C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101071793B (en) * | 2006-05-11 | 2010-06-23 | 统宝光电股份有限公司 | Flat panel display and fabrication method thereof |
| CN102844852A (en) * | 2009-12-15 | 2012-12-26 | 爱克西可法国公司 | Method for making semiconductor device by laser irradiation |
| CN102844852B (en) * | 2009-12-15 | 2016-06-08 | 激光系统解决方案欧洲公司 | The method making semiconductor device is irradiated by laser |
| WO2016155056A1 (en) * | 2015-03-27 | 2016-10-06 | 深圳市华星光电技术有限公司 | Low temperature polysilicon tft substrate structure and manufacturing method therefor |
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| CN100423043C (en) | 2008-10-01 |
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