1344634 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種顯示影像系統，特別關於一種具有 有機發光元件之顯示影像系統。 【先前技術】 有機發光元件（Organic Light-Emitting Device, OLED ) 具有自發光、高亮度、高對比、體積輕薄、低耗電及反應 速度快等優點，已逐漸應用於各類顯示影像系統，例如有 機發光顯示器。有機發光元件係可依據其驅動方式區分為 被動矩陣式有機發光元件（Passive-Matrix OLED， PM-OLED )與主動矩陣式有機發光元件（Active-Matrix OLED，AM-OLED)。 然而’被動矩陣式有機發光顯示器受限於驅動模式， 並有壽命較短與無法大面積化等缺點，因此主動矩陣式有 機發光顯示器較能夠應用於高效能與大尺寸之顯示用途。 主動矩陣式有機發光顯示器可使用非晶石夕 (Amorphous Silicon, a-Si)薄膜電晶體（Thin Film Transistor, TFT)或低溫多晶矽（Low Temperature Poly1344634 IX. Description of the Invention: [Technical Field] The present invention relates to a display image system, and more particularly to a display image system having an organic light-emitting element. [Prior Art] Organic Light-Emitting Device (OLED) has the advantages of self-illumination, high brightness, high contrast, light weight, low power consumption and fast response. It has been gradually applied to various display image systems, such as Organic light emitting display. The organic light-emitting elements can be classified into a passive matrix type organic light emitting element (Passive-Matrix OLED, PM-OLED) and an active matrix type organic light emitting element (Active-Matrix OLED, AM-OLED) according to the driving manner thereof. However, the passive matrix organic light-emitting display is limited by the driving mode, and has shortcomings such as short life and large area. Therefore, the active matrix organic light-emitting display can be applied to high-performance and large-sized display applications. The active matrix organic light emitting display can use Amorphous Silicon (a-Si) thin film transistor (TFT) or low temperature polycrystalline germanium (Low Temperature Poly).
Silicon, LPTS)薄膜電晶體來驅動。其中，因為低溫多晶 矽薄膜電晶體之特性比非晶矽薄膜電晶體更佳，所以低溫 多晶矽薄膜電晶體已成為主動矩陣式有機發光顯示器之 主流驅動元件。 由於多晶石夕的晶粒（grain)比非晶石夕的晶粒大，故能 5 1344634 減少缺陷，並得到高載子遙移率，因此可使電晶體製作得 更小’進而增加晝素結構之開口率（aperture rati〇)。另外， 由於載子遷移率之提高，町以將部分面板周邊驅動電路隨 同薄膜電晶體製程同時製造於玻璃基板上，大幅降低接線 數目’並藉此大幅提升有機發光面板的特性及可靠度，使 什面板製造成本大帽降低。Silicon, LPTS) thin film transistors are used to drive. Among them, since the characteristics of the low-temperature polycrystalline germanium transistor are better than those of the amorphous germanium thin film transistor, the low-temperature polycrystalline thin film transistor has become the mainstream driving element of the active matrix organic light emitting display. Since the grain of the polycrystalline stone is larger than the grain of the amorphous stone, it can reduce the defect and obtain the high carrier mobility, so that the transistor can be made smaller, thereby increasing the 昼. The aperture ratio of the prime structure (aperture rati〇). In addition, due to the increase in carrier mobility, the town will simultaneously manufacture some of the panel peripheral driving circuits along with the thin film transistor process on the glass substrate, greatly reducing the number of wires' and thereby greatly improving the characteristics and reliability of the organic light-emitting panel. The cost of manufacturing the panel is reduced.
以下即以習知低溫多晶矽薄膜電晶體作為驅動元 件，應用於有機發光顯示器為例加以說明。一種習知之晝 素結構1之佈線圖如圖i所示’其等效電路圖如圖2所示。 請參照圖1及圖2所示，晝素結構1係具有二個電晶體n、 12、一個儲存電容13以及一有機發光元件14。其中，電 晶體11係作為選擇開關，其閘極係與一掃描線（Scan jjne ) SL電性連接以接收掃描訊號，其没極係與一資料線（ Line ) DL電性連接以接收資料訊號，其源極係與儲存電容 13之一端及另一電晶體12之閘極電性連接。另一電晶體 12係作為一驅動元件以控制一電流驅動有機發光元件μ 發光，電晶體1·2之源極係與一電源Vdd電性連接，電晶 體12之汲極係與有機發光元件14電性連接。 & 用以驅動有機發光元件14發光之電晶體12係具有 P型通道12卜原先，電晶體12具有一非晶矽薄膜層以作 為活化層’然後此非晶石夕薄膜層再經由準分子雷射迟火 (Excimer Laser Annealing, ELA ) 製程而成為多晶矽薄膜 層，於此，ELA製程即以準分子雷射作為熱源，照射於非 晶矽薄膜層，使非晶矽薄膜層在低於6〇〇。(：的環境下，吸 6 1344634 收準分孑雷射的能量，使得非晶矽薄膜層熔化並進行再辞 晶的步雜’然後形成多晶碎薄膜層。然後’再對此多晶發 薄膜層之二端進行摻雜’使其二端分別形成源極及没極而 產生通道。如此，電晶體12係成為一低溫多晶石夕薄膜電 曰 晶體。 然而’當準分子雷射在進行照射時，是以連續的脈衝 光束，沿著圖1中所示的雷射行徑方向來對電晶體12 之P型通道121進行照射。由於準分子雷射在一次的脈衝 光束中，其光束波形（beam shape profile)無法完全一致， 此外，在每一次的脈衝光束中，雷射之強度及特性亦無法 完全相同’以致於在不同畫素結構中的電晶體之結晶特性 會有些許的差異，間接使每一晝素之發光特性產生不同， 而產生ELAnmra效應，ELAmura會導致顯示時色不均的 現象。且這樣的ELA mura可分為二種形式，其方向互為 垂直’分別係由於準分子雷射之光束波形的不同以及每一 次脈衝光束的能量差異所產生的。 因此，如何，提供一種顯示影像系統，其所具有的有機 發光元件在ELA製程中’能夠有效改善elA mura效應， 而提高有機發光元件之發光效能，實為當前重要課題之 【發明内容】 有鑑於上述課題’本發明之目的為提供一種顯示影像 系統，使得有機發光元件在ELA製程中，能夠有效改善 7 1344634 ELA mura效應，而提高有機發光元件之發光效能。 緣是，為達上述目的，依本發明之一種顯示影像系統 包括複數個晝素結構，該畫素結構包括一有機發光元件以 及一晝素驅動電路。晝素驅動電路具有一第一驅動電晶體 及一第二驅動電晶體，第一驅動電晶體及第二驅動電晶體 係用以驅動有機發光元件發光，且第一驅動電晶體之通道 與第二驅動電晶體之通道係相互連結且呈實質正交。 承上所述，因依本發明之一種顯示影像系統之每一畫 素結構具有二驅動個電晶體共同驅動有機發光元件發 光，且此二個驅動電晶體之通道係相互連結且呈實質正 交。與習知技術相較，本發明於進行ELA製程時，準分子 雷射沿著同一方向以連續的脈衝光束照射此二個驅動電 晶體之活化層，猎由此'一個驅動電晶體之通道設置方向， 能夠同時對二種型式的ELA mura效應產生互補的作用， 因而有效改善ELA mura效應，進而提高有機發光元件之 發光效能。 【實施方式】 以下將參照相關圖式’說明依本發明較佳實施例之一 種顯示影像系統’其中相同的元件將以相同的參照符號加 以說明。 本發明較佳實施例之一種顯示影像系統係包括複數 個畫素結構2,每一畫素結構2之等效電路圖如圖3所示， 每一晝素結構2之佈線圖如圖4所示。 請參照圖3及圖4所示，晝素結構2係包括一有機發 光元件21以及一晝素驅動電路20。其中，晝素驅動電路 20係驅動有機發光元件21發光，並與一掃描線SL及一資 料線DL電性連接，且畫素驅動電路20係包括一選擇開關 22、一第一驅動電晶體23、一第二驅動電晶體24及一儲 存電容25。 在本實施例中，選擇開關22係為一 N型電晶體，其 閘極係與掃描線SL電性連接，其汲極係與資料線DL電性 連接，其源極係與儲存電容25之一端、第一驅動電晶體 23之閘極及第二驅動電晶體24之閘極電性連接。於此， 第一驅動電晶體23及第二驅動電晶體24係為P型電晶 體，且其通道231、241係相互連結並呈實質垂直。第一 驅動電晶體23及第二驅動電晶體24之源極係與儲存電容 25之另一端及一電源VDD電性連接，而第一驅動電晶體 23及第二驅動電晶體24之汲極係與有機發光元件21電性 連接。 當掃描線SL提供一訊號至選擇開關22以作為一選擇 訊號，且其電壓足夠開啟（turnon)選擇開關22時，作為 選擇開關22之N型電晶體會導通資料線DL及第一驅動 電晶體23與第二驅動電晶體24之閘極，同時亦導通資料 線DL及儲存電容25之一端。此時，資料線DL會提供一 資料訊號並經由選擇開關22之N型通道傳送至第一驅動 電晶體23及第二驅動電晶體24之閘極，第一驅動電晶體 23及第二驅動電晶體24係依據此資料訊號之電壓值來作 1344634 動，且電源vDD係依據此電壓值提供一電流經由第一驅動 電晶體23與第二驅動電晶體24之P型通道至有機發光元 件21，如此，有機發光元件21就可依據此電流發光。 此外，由於儲存電容25的一端與第一驅動電晶體23 及第二驅動電晶體24之閘極電性連接，所以當選擇開關 22關閉（turn off)時，第一驅動電晶體23及第二驅動電 晶體24之閘極電壓，在一段預設時間内仍會維持在資料 訊號之電壓值。且依據此電壓，第一驅動電晶體23及第 二驅動電晶體24繼續在開啟（on)的狀態，並使有機發 光元件21繼續發光。 請參照圖4所示，在本實施例中，第一驅動電晶體23 及第二驅動電晶體24之通道231、241係相互連結且呈實 質垂直，且通道231、241可呈L型或十字型。原先，第 一驅動電晶體23及第二驅動電晶體24在通道231、241 的位置上各具有一非晶矽薄膜層以作為活化層，然後此非 晶矽薄膜層再經由準分子雷射退火製程而成為多晶矽薄 膜層，然後，長對此多晶矽薄膜層之二端進行摻雜，使其 二端分別形成源極及汲極而產生通道，如此，第一驅動電 晶體23及第二驅動電晶體24係成為低溫多晶矽薄膜電晶 體。 在準分子雷射退火製程中，準分子雷射係遵行圖4中 之雷射行徑方向，且以一次接一次的脈衝光束照射此二個 驅動電晶體23、24之活化層，照射的區域呈一狹長的矩 形區域。由於雷射之光束波形的不完全相同以及每一次脈 10 1344634 衝光束之強度及特_不同而.產生二種型式的祖_ 效庳，且這二—式的ELAmura效應之方向係互為垂直。 /通道231、241其中之一的設置方向與 在本實施例中，〆 _，而另一通道的設置方向與雷射行徑方 雷射行徑方向蜜真 ^ 1道241方向與雷射行徑方向平行之電晶 向平行，此時，通uHereinafter, a conventional low-temperature polycrystalline germanium film transistor is used as a driving element, and is applied to an organic light-emitting display as an example. A conventional wiring diagram of the structure 1 is shown in Fig. 2, and its equivalent circuit diagram is shown in Fig. 2. Referring to FIGS. 1 and 2, the halogen structure 1 has two transistors n, 12, a storage capacitor 13, and an organic light-emitting element 14. The transistor 11 is used as a selection switch, and the gate is electrically connected to a scan line (Scan jjne) SL to receive the scan signal, and the gate is electrically connected to a data line DL to receive the data signal. The source is electrically connected to one end of the storage capacitor 13 and the gate of the other transistor 12. The other transistor 12 is used as a driving element to control a current to drive the organic light emitting element μ to emit light. The source of the transistor 1·2 is electrically connected to a power source Vdd, and the gate of the transistor 12 and the organic light emitting element 14 are electrically connected. Electrical connection. & The transistor 12 for driving the organic light-emitting element 14 to emit light has a P-type channel 12, and the transistor 12 has an amorphous germanium film layer as an active layer' and then the amorphous thin film layer is further excimer The Excimer Laser Annealing (ELA) process becomes a polycrystalline germanium film layer. Here, the ELA process uses a pseudo-molecular laser as a heat source to illuminate the amorphous germanium film layer so that the amorphous germanium film layer is below 6. Hey. (In the environment of the environment, absorb 6 1344634 to accumulate the energy of the laser, so that the amorphous enamel film layer melts and re-crystallizes the step </ RTI> and then forms a polycrystalline film layer. Then 're-crystallize this The two ends of the thin film layer are doped 'so that the two ends form a source and a non-polar phase respectively to form a channel. Thus, the transistor 12 is a low-temperature polycrystalline thin-film electro-optical crystal. However, when the excimer laser is When irradiating, the P-type channel 121 of the transistor 12 is irradiated with a continuous pulsed beam along the direction of the laser radial direction shown in Fig. 1. Since the excimer laser is in the primary pulsed beam, its beam The beam shape profile cannot be completely consistent. In addition, the intensity and characteristics of the laser cannot be exactly the same in each pulse beam, so that the crystal characteristics of the crystal in different pixel structures will be slightly different. Indirectly, the luminescence properties of each element are different, and the ELAnmra effect is produced, and ELAmura causes uneven color during display. And such ELA mura can be divided into two forms, the directions of which are perpendicular to each other'. It is caused by the difference of the beam waveform of the excimer laser and the energy difference of each pulsed beam. Therefore, how to provide a display image system having an organic light-emitting element capable of effectively improving the elA in the ELA process The mura effect, and improving the luminous efficacy of the organic light-emitting element, is currently an important subject. [Invention] In view of the above problems, the object of the present invention is to provide a display image system, which can effectively improve the organic light-emitting element in the ELA process. 7 1344634 ELA mura effect, and improve the luminous efficacy of the organic light-emitting element. In order to achieve the above object, a display image system according to the present invention comprises a plurality of pixel structures including an organic light-emitting element and a stack of The driving circuit has a first driving transistor and a second driving transistor, the first driving transistor and the second driving transistor system for driving the organic light emitting device to emit light, and the first driving transistor The channel and the channel of the second driving transistor are interconnected and substantially orthogonal. As described above, each of the pixel structures of the display image system according to the present invention has two driving transistors for driving the organic light emitting elements to emit light, and the channels of the two driving transistors are connected to each other and substantially orthogonal. Compared with the prior art, in the ELA process, the excimer laser illuminates the active layers of the two driving transistors in a continuous pulsed beam along the same direction, thereby setting up a channel for driving the transistor. The direction can simultaneously complement the two types of ELA mura effects, thereby effectively improving the ELA mura effect, thereby improving the luminous efficacy of the organic light-emitting element. [Embodiment] Hereinafter, the description will be made with reference to the related drawings. A display image system of an embodiment will be described with the same reference numerals. A display image system according to a preferred embodiment of the present invention includes a plurality of pixel structures 2, and an equivalent circuit diagram of each pixel structure 2 is shown in FIG. 3, and a wiring pattern of each pixel structure 2 is as shown in FIG. . Referring to Figures 3 and 4, the halogen structure 2 includes an organic light-emitting element 21 and a halogen drive circuit 20. The pixel driving circuit 20 is configured to drive the organic light emitting element 21 to emit light, and is electrically connected to a scan line SL and a data line DL, and the pixel driving circuit 20 includes a selection switch 22 and a first driving transistor 23 . A second driving transistor 24 and a storage capacitor 25. In this embodiment, the selection switch 22 is an N-type transistor, the gate is electrically connected to the scan line SL, the drain is electrically connected to the data line DL, and the source and the storage capacitor 25 are The gate of one end, the gate of the first driving transistor 23 and the gate of the second driving transistor 24 are electrically connected. Here, the first driving transistor 23 and the second driving transistor 24 are P-type transistors, and the channels 231, 241 are connected to each other and substantially perpendicular. The source of the first driving transistor 23 and the second driving transistor 24 is electrically connected to the other end of the storage capacitor 25 and a power source VDD, and the first driving transistor 23 and the second driving transistor 24 are connected to each other. It is electrically connected to the organic light emitting element 21. When the scan line SL provides a signal to the selection switch 22 as a selection signal, and its voltage is sufficient to turn the selection switch 22, the N-type transistor as the selection switch 22 turns on the data line DL and the first driving transistor. 23 and the gate of the second driving transistor 24, and also open one end of the data line DL and the storage capacitor 25. At this time, the data line DL provides a data signal and is transmitted to the gates of the first driving transistor 23 and the second driving transistor 24 via the N-type channel of the selection switch 22, the first driving transistor 23 and the second driving battery. The crystal 24 is operated according to the voltage value of the data signal, and the power supply vDD provides a current according to the voltage value to the P-type channel of the first driving transistor 23 and the second driving transistor 24 to the organic light-emitting element 21, Thus, the organic light emitting element 21 can emit light according to this current. In addition, since one end of the storage capacitor 25 is electrically connected to the gates of the first driving transistor 23 and the second driving transistor 24, when the selection switch 22 is turned off, the first driving transistor 23 and the second The gate voltage of the driving transistor 24 is maintained at the voltage value of the data signal for a predetermined period of time. According to this voltage, the first driving transistor 23 and the second driving transistor 24 continue to be in an on state, and the organic light-emitting element 21 continues to emit light. Referring to FIG. 4, in the embodiment, the channels 231 and 241 of the first driving transistor 23 and the second driving transistor 24 are connected to each other and substantially perpendicular, and the channels 231 and 241 may be L-shaped or cross-shaped. type. Originally, the first driving transistor 23 and the second driving transistor 24 each have an amorphous germanium film layer at the positions of the channels 231 and 241 as an active layer, and then the amorphous germanium film layer is further annealed by excimer laser The process becomes a polycrystalline germanium thin film layer, and then the two ends of the polycrystalline germanium thin film layer are doped to form a source and a drain to form a channel, so that the first driving transistor 23 and the second driving current The crystal 24 is a low temperature polycrystalline germanium film transistor. In the excimer laser annealing process, the excimer laser system follows the direction of the laser path in FIG. 4, and the activation layer of the two driving transistors 23, 24 is irradiated with the pulse beam once and again, and the irradiated area is A narrow rectangular area. Due to the inconsistency of the beam shape of the laser beam and the intensity and speciality of the beam of each pulse 10 1344634, two types of ancestor effects are generated, and the direction of the ELAmura effect of the two equations is perpendicular to each other. . The direction of setting one of the channels 231, 241 is in the present embodiment, 〆_, and the direction of setting the other channel is parallel to the direction of the laser path and the path of the laser is true. The direction of the 241 is parallel to the direction of the laser. The electro-crystals are parallel, at this time, pass u
體24可減少對由光束波形的不同所引起的ELA mUra效 應，而通道231方向與雷射行徑方向垂直之電晶體23可 減少對由每一次脈衝光束的能量有所差異所引起的ELAThe body 24 reduces the ELA mUra effect caused by the difference in beam waveform, and the transistor 23 whose direction of the channel 231 is perpendicular to the direction of the laser path reduces the ELA caused by the difference in energy of each pulse beam.
rmra杜鹿。如此 嚷 ^ ^ & SA οα Λ *SSf —苗5 番A 帝曰础 24就能夠同時對二種型式的ELA mura效應產生互補的作 用，因而有效改善ELAmura效應。 另外，有機發光元件21可分為一第一有機發光部21a 及一第二有機發光部21b ’如圖5之晝素結構：T所示，另 外，圖6為晝素結構2·之等效電路圖。請參照圖5及圖6 所示’有機發光元件21係被區分為第一有機發光部21a 及第二有機發光部21b，在本實施例中，二有機發光部之 配置方式係可與/ 一驅動電晶體23、24其中之一之通道方 向呈實質平行或實質垂直。第一驅動電晶體23係驅動第 一有機發光部21a發光，第二驅動電晶體24係驅動第二有 機發光部21b發光，且第一驅動電晶體23之汲極係與第 一有機發光部21a電性連接’第二驅動電晶體24之汲極係 與第二有機發光部21b電性連接’且第一驅動電晶體23 之源極及第二驅動電晶體24之源極係與電源Vdd電性連 接。如此，畫素結構2,等同於二個發光區，故可於任一發 11 1344634 光區故障時，另一發光區仍能夠發光，進而提高良率。 在實施上，可將有機發光元件21之透明電極分為二 部分，分別屬於第一有機發光部21a及第二有機發光部 21b，而第一驅動電晶體23之汲極及第二驅動電晶體24 之及極分別與透明電極電性連接。在此，透明電極之材質 可為但不限於銦錫氧化物（indiUIn-tin oxide，ITO)、鋅氧 化物（zinc oxide，ZnO)、銦鋅氧化物（indium_zinc 〇xide， IZO)或 I呂鋅氧化物（aluminum-zinc oxide, AZO) 〇 另外，本實施例中，有機發光元件21並無特定之限 制，其結構可為一般有機發光元件之結構，有機發光層夾 置於透明電極層及對向電極層之外，為提高載子傳輸與注 入效率，還可具有一電洞注入層、一電洞傳輸層、一電子 傳輸層及一電子注入層，此非本發明之技術特點，於此不 予贅述。此外，發光方向可為向上發光（t〇pemissi〇n)或 向下發光（bottom emission )。 請參照圖7所不，本發明較佳實施例之一種顯示影像 系統3係更包括，電子裝置4,電子裝置4係具有一有機 發光面板41及一輸入單元42。在本實施例中，所有的晝 素結構2或晝素結構2係呈陣列排列，並設置於一基板上 而形成有機發光面板41。所以在有機發光面板41上，會 形成複數個晝素驅動電路20、複數條掃描線及複 數條資料線DLrDLj’並且每一條掃描線礼…及每一條 資料線DLi-DLj係與每一晝素驅動電路2〇電性連接。 另外’本實施例係採料分子雷射退火製程來產生低 12 1344634 溫多晶矽薄膜電晶體，進而增加載子遷移率，故可將部分 面板驅動電路一同製造於基板上，例如一掃描驅動電路 411及一資料驅動電路412。其中，掃描線SLi-SLi係連接 掃描驅動電路411與畫素驅動電路20，複數條資料線 DLrDLj係連接資料驅動電路412與晝素驅動電路2〇。資 料驅動電路412係配合掃描驅動電路411操作，掃描驅動 電路411依序將掃描訊號於不同時間輸出至各掃描線 SLKSLi上，俾使資料驅動電路412透過資料線DL^DLj 將資料訊號寫入至晝素驅動電路此外，輸入單元42 與有機發光面板41耦合，並對有機發光面板41提供輸 入，以使有機發光面板41顯示影像。其中電子裝置4可 為移動式電話、數位照相機、個人數位助理、筆記型電腦、 桌上型電腦、電視機、車用顯示器或可攜式DVD機。 综上所述，因依本發明之一種顯示影像系統之每一晝 素結構具有二驅動個電晶體共同驅動有機發光元件發 光’且此二個驅動電晶體之通道係相互連結且呈實質正 交。與習知技術相較，本發明於進行ELA製槎時，準分子 雷射沿著同一方向以連續的脈衝光束照射此二個驅動電 晶體之活化層’藉由此二個驅動電晶體之通道設置方向， 能夠同時對二種型式的ELA mura效應產生彡補的作用， 因而有效改善ELA mura效應，進而提高有機發光元件之 發光效能。 以上所述僅為舉例性，而非為限制性者。任何未脫離 本發明之精神與範疇，而對其進行之等效修改或變更，.均 13 1344634 21b 第二發光部 22 選擇開關 23 第一驅動電晶體 231 、 241 通道 24 第二驅動電晶體 25 儲存電容 3 顯示影像系統 4 電子裝置 41 有機發光面板 411 掃描驅動電路 412 資料驅動電路 42 輸入單元 DL、DLrDLj 資料線 SL、SLrSLi 掃描線 V〇D 電源 15Rmra du deer. Thus 嚷 ^ ^ & SA οα Λ *SSf — Miao 5 Fan A Emperor Foundation 24 can simultaneously complement the two types of ELA mura effects, thus effectively improving the ELAmura effect. In addition, the organic light-emitting element 21 can be divided into a first organic light-emitting portion 21a and a second organic light-emitting portion 21b' as shown in the pixel structure of FIG. 5: T, and FIG. 6 is equivalent to the halogen structure 2. Circuit diagram. Referring to FIGS. 5 and 6 , the organic light-emitting element 21 is divided into a first organic light-emitting portion 21 a and a second organic light-emitting portion 21 b. In the present embodiment, the arrangement of the two organic light-emitting portions can be combined with The channel direction of one of the driving transistors 23, 24 is substantially parallel or substantially vertical. The first driving transistor 23 drives the first organic light emitting portion 21a to emit light, the second driving transistor 24 drives the second organic light emitting portion 21b to emit light, and the first driving transistor 23 has a drain and a first organic light emitting portion 21a. The gate of the second driving transistor 24 is electrically connected to the second organic light emitting portion 21b and the source of the first driving transistor 23 and the source of the second driving transistor 24 are electrically connected to the power source Vdd. Sexual connection. In this way, the pixel structure 2 is equivalent to the two light-emitting areas, so that when any of the 11 1344634 light regions are faulty, the other light-emitting area can still emit light, thereby improving the yield. In practice, the transparent electrode of the organic light-emitting element 21 can be divided into two parts, belonging to the first organic light-emitting portion 21a and the second organic light-emitting portion 21b, respectively, and the drain of the first driving transistor 23 and the second driving transistor. The 24 and the poles are electrically connected to the transparent electrodes, respectively. Here, the material of the transparent electrode may be, but not limited to, indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (indium_zinc 〇xide, IZO) or Ilu zinc. In the present embodiment, the organic light-emitting element 21 is not particularly limited, and the structure thereof may be a structure of a general organic light-emitting element, and the organic light-emitting layer is sandwiched between the transparent electrode layer and the pair. In addition to the electrode layer, in order to improve carrier transport and injection efficiency, a hole injection layer, a hole transport layer, an electron transport layer and an electron injection layer may be further provided. Do not repeat them. Further, the light emitting direction may be upward light emission (t〇pemissi〇n) or bottom light emission (bottom emission). Referring to FIG. 7, a display image system 3 of the preferred embodiment of the present invention further includes an electronic device 4 having an organic light emitting panel 41 and an input unit 42. In the present embodiment, all of the halogen structure 2 or the halogen structure 2 are arranged in an array and are disposed on a substrate to form the organic light-emitting panel 41. Therefore, on the organic light-emitting panel 41, a plurality of pixel driving circuits 20, a plurality of scanning lines, and a plurality of data lines DLrDLj' are formed, and each scanning line and each data line DLi-DLj are associated with each element. The drive circuit 2 is electrically connected. In addition, the present embodiment is a laser annealing process for producing a low temperature 12 1344634 temperature polycrystalline germanium transistor, thereby increasing the carrier mobility, so that some panel driving circuits can be fabricated on the substrate together, for example, a scan driving circuit 411. And a data driving circuit 412. The scan line SLi-SLi is connected to the scan driving circuit 411 and the pixel driving circuit 20, and the plurality of data lines DLrDLj are connected to the data driving circuit 412 and the pixel driving circuit 2'. The data driving circuit 412 is operated by the scan driving circuit 411. The scan driving circuit 411 sequentially outputs the scanning signals to the scanning lines SLKSLi at different times, so that the data driving circuit 412 writes the data signals to the data lines DL^DLj. In addition, the input unit 42 is coupled to the organic light-emitting panel 41, and provides an input to the organic light-emitting panel 41 to cause the organic light-emitting panel 41 to display an image. The electronic device 4 can be a mobile phone, a digital camera, a personal digital assistant, a notebook computer, a desktop computer, a television, a car display or a portable DVD player. In summary, each of the pixel structures of the display image system according to the present invention has two driving transistors for driving the organic light emitting elements to emit light, and the channels of the two driving transistors are connected to each other and substantially orthogonal. . Compared with the prior art, in the ELA system, the excimer laser irradiates the active layers of the two driving transistors in a continuous pulse beam along the same direction. By setting the direction, it can simultaneously compensate for the two types of ELA mura effects, thereby effectively improving the ELA mura effect, thereby improving the luminous efficacy of the organic light-emitting element. The above is intended to be illustrative only and not limiting. Any equivalent modification or modification without departing from the spirit and scope of the present invention, 13 1344634 21b second light emitting portion 22 selection switch 23 first driving transistor 231, 241 channel 24 second driving transistor 25 Storage Capacitor 3 Display Image System 4 Electronic Device 41 Organic Light Emitting Panel 411 Scan Drive Circuit 412 Data Drive Circuit 42 Input Unit DL, DLrDLj Data Line SL, SLrSLi Scan Line V〇D Power Supply 15