CN1677636A - Fault-reason analyzing method - Google Patents
Fault-reason analyzing method Download PDFInfo
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- CN1677636A CN1677636A CN 200410033256 CN200410033256A CN1677636A CN 1677636 A CN1677636 A CN 1677636A CN 200410033256 CN200410033256 CN 200410033256 CN 200410033256 A CN200410033256 A CN 200410033256A CN 1677636 A CN1677636 A CN 1677636A
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- composition analysis
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 230000007547 defect Effects 0.000 claims abstract description 86
- 238000004458 analytical method Methods 0.000 claims abstract description 85
- 239000000126 substance Substances 0.000 claims abstract description 27
- 230000002950 deficient Effects 0.000 claims description 61
- 238000001514 detection method Methods 0.000 claims description 20
- 230000021715 photosynthesis, light harvesting Effects 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 7
- 238000000682 scanning probe acoustic microscopy Methods 0.000 claims description 5
- 239000000470 constituent Substances 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 4
- 238000012360 testing method Methods 0.000 abstract description 22
- 238000010183 spectrum analysis Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 238000009826 distribution Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000005070 sampling Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- PQZSQOYXZGDGQW-UHFFFAOYSA-N [W].[Pb] Chemical compound [W].[Pb] PQZSQOYXZGDGQW-UHFFFAOYSA-N 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012952 Resampling Methods 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
The method includes following steps: providing a sample, where there are multiple defects on surface of the sample; next, carrying out a defect test in order to detect sizes and positions of defects; then, carrying out analysis of chemical composition for samples; carrying out spectrum analysis based on result of analysis of chemical composition; finally, discriminating reason of producing defects based on result of spectrum analysis.
Description
Technical field
The present invention relates to a kind of defect cause analysis (defect root cause analysis) method, relate in particular to a kind of defect cause analytical method that is used for large-sized semiconductor wafer.
Background technology
In production process of semiconductor; tend to because some are unavoidable former thereby generate tiny particulate or defective; and along with constantly dwindling of size of components in the semiconductor technology and improving constantly of circuit integration, defective that these are atomic little or particulate also are on the rise to the influence of integrated circuit quality.Therefore, for keeping the stable of product quality, usually when carrying out every semiconductor technology, also must carry out defects detection at the semiconductor subassembly of being produced, to cause the basic reason of these defectives according to testing result analysis, could further avoid or reduce generation of defects afterwards, to reach the purpose that promotes semiconductor technology qualification rate and reliability by the adjustment of technological parameter.
Please refer to Fig. 1, Fig. 1 is the semiconductor process flows schematic diagram of a prior art.As shown in Figure 1, the semiconductor chip must be through the multiple tracks semiconductor technology in manufacturing process, generally speaking, the semiconductor chip experiences thousands of procedures mostly in a wafer factory, for convenience of explanation, only defect control method in the existing semiconductor technology is described among Fig. 1 with wherein several operation.As shown in Figure 1, operation A10, process B 20, operation C 30, step D 40 and operation E 50 represent five road semiconductor process respectively, and these semiconductor process are not limited to use identical plant equipment or different plant equipment to carry out.Defects detection 60 and defects detection 70 are then carried out sampling and testing at finishing the semiconductor chip of operation A 10 with operation C 30 respectively.
In case when in defects detection 60 or 70, finding unusual condition is arranged, will carry out further defect cause analysis again, in the hope of finding out the basic reason that defective takes place, so that suppress generation of defects by technologic adjustment.In the defect analysis mode of prior art, progressively detect at the source of defective mostly, caused by that operation in the hope of finding out these defectives.For instance, if find that at defects detection 70 places a large amount of newly-increased defectives generates (defective that deduction has been found) in defects detection 60, will do by the station at each operation of defects detection 60 and 70 so and verify, just respectively process B 20 is tested with operation C 30, after finishing, process B 20 do not find defective if find, and after finishing operation C 30, just find generation of defects, will assert that so the reason that causes these defectives is at operation C 30, can trial then removes to adjust the every technological parameter among the operation C 30, look at avoid the generation of defective.
In prior art defect cause analysis mode, except expending a large amount of time, progressively test each operation by needs, and other has a sizable blind spot.In the defect cause analysis mode of prior art, betide which step though can find out defective really, but cause the basic reason that this defective takes place but to may not come from this step, and probably be because some nibs in the preceding one procedure, these nibs may have no impact for preceding working procedure, but to back one procedure lack and can therefore cause serious problem.For instance, suppose that process B 20 and operation C 30 are respectively an etching work procedure and a deposition procedures, for process B 20, in this operation, form or more residual impurity or particulate may and have no effect in semiconductor chip surface, therefore do not find that when carrying out defects detection process B 20 has any problem, yet when carrying out the deposition step of operation C 30, those impurity or the particulate that before be in the surface all can be grown up gradually because of the influence of this deposition procedures, thereby cause generation of defects.Under this situation, if adopt known defect cause analytical method possibly because the process B 20 of front problem not to take place and take for these defectives all be that operation C 30 causes, under this situation, anyway revise the parameter of operation C 30, the generation situation of defective is made moderate progress.
In addition, in the defect cause analytical method of prior art, also comprise a kind of energy dissipation spectrometer (energy dispersive spectrometer that utilizes, EDS) carry out the method for chemical composition analysis, this method utilizes electron beam to hit an ad-hoc location of test object surface, and analyze according to the characteristics x-ray that it excited, to obtain the chemical composition of this point, therefore as long as by the data of this fault location and the comparison between background information, can draw the constituent of this defective, for an engineer for the suitable familiarity of process conditions, this almost is enough to judge the contingent reason of this defective.Yet because the energy dissipation spectrometer has that resolution is low, quantitation capabilities is poor, to shortcomings such as the detectability of light element are not good yet, therefore all can't effectively detect for some smaller defect (below 0.2 micron), only can be applicable to the bulky grain Analysis on defects, constantly dwindling during along with the technology chi, various sizes little but to the devastating defective of rate of finished products also in continuous increase, the applicability of this method is also in continuous decline.
Pay attention to along with the progress of semiconductor industry technology and to economic benefit, the diameter of wafer was marched toward 12 o'clock by past 8 o'clock, the live width size also enters below 0.13 micron even 0.1 micron by 0.18 micron of the past, at this by testing in the process of producing in batches, often need technology is significantly changed and adjustment, therefore, press for a kind of analytical method of defect cause rapidly and accurately now, to address the above problem.
Summary of the invention
Main purpose of the present invention is to provide a kind of defect cause analytical method that can carry out chemical composition analysis to the small size defective, to solve the problems of the prior art.
Most preferred embodiment of the present invention discloses a kind of defect cause analytical method of semiconductor technology, and comprising at first provides a sample, has a plurality of defectives on this sample; Then carry out defects detection, to detect the size and location of this defective; And, carry out a suitable chemical composition analysis with suitable instrument and method according to the size and the position of this defective; Carry out an atlas analysis according to this chemical composition analysis result again; Result according to this atlas analysis judges the generation reason that this defective is produced at last.
Because defect cause analytical method of the present invention utilizes a chemical composition analysis to detect the material that causes defective, and infer that according to the material that produces defective it may occurrence cause, therefore can significantly shorten judgement time and improve the sensitivity that defect cause is analyzed, reach the purpose that promotes product percent of pass and reliability.
Description of drawings
Fig. 1 is a defect cause analytical method schematic diagram in the prior art.
Fig. 2 is a defect cause analytical method schematic diagram among the present invention.
Fig. 3 is the defect cause analytical method schematic diagram in the first embodiment of the invention.
Fig. 4 is the schematic diagram of a composition distribution collection of illustrative plates in the first embodiment of the invention
Fig. 5 is a defect cause analytical method schematic diagram in the second embodiment of the invention.
Fig. 6 is the schematic diagram of a composition distribution collection of illustrative plates in the second embodiment of the invention
Description of reference numerals
10 operation A, 20 process B
30 operation C, 40 step D
50 processing procedure E, 60 defects detection
110 samplings of 70 defects detection
12 defect detections, 130 classifications of defects
140 chemical composition analysis, 150 atlas analysis
160 defect causes are analyzed 210 samplings
The 230 auger electrons analyses of 220 defect detections
The 250 defect cause analyses of 240 atlas analysis
262 silica layers, 264 tungsten leads
310 samplings, 320 defect detections
330 focused ion beam are cut 340 auger electrons analyses
The 360 defect cause analyses of 350 atlas analysis
Embodiment
Please refer to Fig. 2, Fig. 2 is the schematic diagram of defect cause analytical method 100 among the present invention.As shown in Figure 2, at first, take a sample 110, obtain a test sample book, by this test sample book being carried out fault detection (defect inspection) 120, and carry out classification of defects 130, and adopt suitable device/method to go chemical composition analysis 140 according to different defect kenel according to the result of check.
In preferred embodiment of the present invention, according to the size of a plurality of defectives on this test sample book and position and roughly be divided three classes, and carry out chemical composition analysis 140 with three kinds of diverse ways respectively.Wherein, when mainly being positioned at this test sample book lower floor, defective belongs to first defect type, the size that mainly is positioned at this test sample book surface and defective when defective big (greater than 0.2 micron), have single phase (singlephase) or during for thicker particle (thick particle), then belong to second defect type, at last, defective is positioned at equally this test sample book surface but the situation of flaw size less (less than 0.2 micron), non-single phase or non-oversize grain then is the 3rd defect type.
For this second defect type and the 3rd defect type, because defective mainly is positioned at the surface of this test sample book, therefore can utilize suitable instrument directly to measure, generally speaking, at flaw size big (greater than 0.2 micron), have single phase or be second defect type of thicker particle, mostly employing can be analyzed the constituent of this defective at the energy dissipation instrument of measuring in a big way, and at the 3rd less defect type of size, then by utilizing one scan formula auger electron microscope (scanning auger microscopy, SAM) or an auger electron spectroscopy instrument (auger electronspectroscopy, AES) this sample is carried out auger electrons analysis (auger analysis), compare by the difference composition between normal region and abnormal area, to obtain the composition of this defective.Compare with the energy dissipation instrument, though the auger electrons analysis only can detect (less than 0.1 micron) at the very little scope in this test sample book surface, and can only detect a very shallow layer region (about 50 dusts), but its resolution and sensitivity far surpass the energy dissipation instrument, and can be small to some but defective that structure is complicated provides reasonable testing result.
As for first defect type, because its defective mainly is positioned at the lower floor of this test chip, therefore can't directly carry out chemical composition analysis, therefore can utilize a voltage-contrast (voltage contrast) to find out the approximate location of defective mostly earlier, then utilize proper implements, focused ion beam (focusion beam for example, FIB), this test sample book is cut, this defective is exposed, cooperate with aforementioned manner, for example auger electrons analysis is carried out chemical composition analysis 140 at the section of this test sample book again.
No matter be which kind of defect type, when carrying out this chemical composition analysis 140, can adopt different analytical methods according to the state of specimen mostly, for example can comprise fixed point scanning (point scan), go level (delayer) structural analysis or depth concentration (depth profile) to analyze, gather all test results at last, and draw one according to this result and form the distribution collection of illustrative plates, and carry out an atlas analysis 150 according to this composition distribution collection of illustrative plates.According to the known shape that forms defective, position, and situation about forming, under most situation, for a process engineer who knows this field, the basic reason that this defective of generation of all being not difficult to analyze or infer, then nature can take appropriate measures, and problematic processing step is suitably revised, to avoid generation of defects, and then the abnormality of solution product, improve reliability of products.
For further specifying defect analysis mode of the present invention, below enumerate two embodiment, and simultaneously carry out the defect cause analysis with the defect cause analytical method and the defect analysis method of the present invention of prior art, so that further specify the difference between the present invention and the prior art.At first, in first embodiment, be example with common etch process, defect cause analytical method of the present invention is described.For instance, suppose that we plan to form the tungsten lead of a patterning on a silica layer, but behind the intact tungsten lead of etching, finding there is partial short circuit in these tungsten leads, that is defectiveness takes place.At this moment if we analyze in the defect analysis mode of prior art, then we may need to determine a defective surveillance program, operation from the problem of generation, recall three to five operations forward, these operations are carried out sampling inspection one by one, progressively confirm whether there is any problem in these operations, after but we find that possibly this problem only is present in etching, therefore, according to the analysis mode of prior art, the residue of last wet-cleaning operation is pointed to the reason of problem in very natural meeting.Even analyze the constituent of this defective again with the energy dissipation instrument, but because the resolution of energy dissipation instrument is low, so also only can all mainly be formed with the normal region at the place of noting abnormalities by silicon and oxygen, and can not obtain any useful data, even put together with the result who progressively checks, also can't draw any correct conclusion.
Please refer to Fig. 3, Fig. 3 is the defect cause analytical method in the first embodiment of the invention.As shown in Figure 3, when method of the present invention taking a sample 210 with defects detection 220 after, when finding that this sample has unusual condition, will be directly carry out auger electrons and analyze 230 (suppose defective is positioned at the surface and less than 0.2 micron) with this unusual sample, and need not resample, for some sporadic defectives, this will significantly promote the validity of sampling, and can not cause the delay of detection time because of finding defective because of after resampling.Then will analyze 230 result and draw one and form the distribution collection of illustrative plates, to carry out atlas analysis 240 according to auger electrons.Please refer to Fig. 4, Fig. 4 is the schematic diagram of a composition distribution collection of illustrative plates, as shown in Figure 4, we can clearly distinguish silica layer 262 with its on tungsten lead 264, though and can find that this defective produces when the tungsten etch operation, but what basic reason may be come has partial polymer residual in the etching work procedure of back, therefore just cause this generation of defects, afterwards, as long as the partial parameters in this etching work procedure is adjusted, avoid photoresist layer residual, can effectively address this problem.
Below be example with a deposition procedures, the situation that occurs in test sample book lower floor when defective is described.Deposition procedures with titanium nitride is an example, when in the process of defect analysis 320, when finding that defectiveness is present in test sample book lower floor, if carry out the defect cause analysis with prior art, back tracking result also only can find that defective is to produce in deposition procedures, also only can find that this defective is made up of nitrogen and titanium equally and carry out chemical composition analysis,, only can go to adjust the parameter of this deposition procedures by trial and error pricing so can not obtain any conclusion with the energy dissipation instrument.As shown in Figure 5, but if analyze with defect cause analytical method of the present invention, when then in defects detection 320, being found to defective and existing with sweep electron microscope (SEM), can cut this test sample book 330 by focused beam, again this section is carried out auger electrons and analyze 340, and make one in the same way and form distribution distribution collection of illustrative plates.Please refer to Fig. 6, Fig. 6 is the schematic diagram of a composition distribution collection of illustrative plates.As shown in Figure 6, we can clearly distinguish silicon layer 372 and 374 of titanizing nitrogen layers have a spot of phosphorus particle 376, so the basic reason of decidable this defective is due to be front layer surface clean, and by a suitable parameter adjustment, for example previous cleaning step or etching step are carried out parameter adjustment, to avoid the generation of phosphorus particle, so that address this problem effectively.
Compare with defect cause analysis mode of the prior art, defect cause analysis mode of the present invention is by making collection of illustrative plates in conjunction with focused ion beam and chemical composition analysis, result by atlas analysis judges the basic reason that produces defective, so can effectively improve speed and accuracy that defect cause is analyzed, and can in the time of lacking, find out a preferable processing range.In addition, the invention also discloses a kind of method that can come the analytical chemistry composition at different defect types in a different manner, this will improve to a nearlyer step accuracy and the sensitivity of atlas analysis, and can expend under the situation of less time cost, by correctly adjusting the generation that every technological parameter suppresses abnormality, reach the purpose that improves product stability and reliability.
The above only is a preferred embodiment of the present invention, and all equivalences of being done in the present patent application claim change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (9)
1. defect cause analytical method, this method comprises the following steps:
One sample is provided, has a plurality of defectives on the upper surface of described sample;
Carry out a defects detection, to detect the size and location of described defective;
Described sample is carried out a chemical composition analysis;
Result according to described chemical composition analysis carries out an atlas analysis; And
Result according to described atlas analysis judges the reason that described defective produces.
2. method according to claim 1, wherein said method is after finishing defects detection, also comprise a classification of defects step,, and adopt corresponding chemical composition analysis mode according to the defect kind of described defective so that judge the defect kind of described defective.
3. method according to claim 1, wherein when the size of described defective during less than 0.2 micron or non-single-phase constituent particle, described chemical composition analysis utilizes auger electrons to survey.
4. method according to claim 3, wherein said method utilize an one scan formula auger electron microscope or an auger electron spectroscopy instrument to come described sample is carried out chemical composition analysis.
5. method according to claim 1, wherein when the size of described defective greater than 0.2 micron, have single phase or during for thicker particle, described chemical composition analysis utilizes an energy dissipation analyzer to survey.
6. method according to claim 1, the method for wherein said chemical composition analysis comprise fixed point scanning, remove Analysis of Hierarchy Structure or depth concentration analysis.
7. defect cause analytical method, this method comprises the following steps:
One sample is provided, has a plurality of defectives in the described sample;
Carry out a voltage-contrast, to pick out the position of described defective;
Utilize a focused ion beam that described sample is cut, so that a section of described sample exposes, and
Utilize auger electrons that the section of described sample is carried out a chemical composition analysis;
Result according to described chemical composition analysis carries out an atlas analysis; And
Judge the reason that defective such as described produces according to the result of described atlas analysis.
8. method according to claim 7, wherein said method utilize an one scan formula auger electron microscope or an auger electron spectroscopy instrument to come the section of described sample is carried out chemical composition analysis.
9. method according to claim 7, the method for wherein said chemical composition analysis is carried out in the mode of fixed point scanning.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100332569A CN1321445C (en) | 2004-03-29 | 2004-03-29 | Fault-reason analyzing method |
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| CNB2004100332569A CN1321445C (en) | 2004-03-29 | 2004-03-29 | Fault-reason analyzing method |
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| CN1677636A true CN1677636A (en) | 2005-10-05 |
| CN1321445C CN1321445C (en) | 2007-06-13 |
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| CNB2004100332569A Expired - Fee Related CN1321445C (en) | 2004-03-29 | 2004-03-29 | Fault-reason analyzing method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103608891A (en) * | 2011-06-06 | 2014-02-26 | 株式会社日立高新技术 | Charged particle beam device and sample production method |
| CN107533103A (en) * | 2015-05-20 | 2018-01-02 | 科磊股份有限公司 | Mistake and defect in logic chip based on voltage-contrast derive |
| CN107833843A (en) * | 2017-11-02 | 2018-03-23 | 武汉新芯集成电路制造有限公司 | The analysis method and analysis system of defect source, defect detecting device |
| CN113302478A (en) * | 2019-01-10 | 2021-08-24 | 朗姆研究公司 | Defect classification and source analysis for semiconductor devices |
| CN117878025A (en) * | 2024-03-11 | 2024-04-12 | 江苏芯德半导体科技有限公司 | Method for automatically clamping and controlling defective chips on wafer map |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106908449B (en) * | 2017-02-17 | 2019-09-06 | 福州东旭光电科技有限公司 | A method of finding the workshop section for generating defect by measurement liquid-crystalline glasses board defect depth |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0154158B1 (en) * | 1994-07-14 | 1998-12-01 | 김주용 | Monitoring method for processing defects |
| US5787190A (en) * | 1995-06-07 | 1998-07-28 | Advanced Micro Devices, Inc. | Method and apparatus for pattern recognition of wafer test bins |
| TW538251B (en) * | 2000-03-03 | 2003-06-21 | Promos Technologies Inc | Method for finding the root cause of the failure of a faulty chip |
| JP3735517B2 (en) * | 2000-05-30 | 2006-01-18 | 株式会社東芝 | Simulated defect wafer and defect inspection recipe creation method |
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2004
- 2004-03-29 CN CNB2004100332569A patent/CN1321445C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103608891A (en) * | 2011-06-06 | 2014-02-26 | 株式会社日立高新技术 | Charged particle beam device and sample production method |
| CN107533103A (en) * | 2015-05-20 | 2018-01-02 | 科磊股份有限公司 | Mistake and defect in logic chip based on voltage-contrast derive |
| US10539612B2 (en) | 2015-05-20 | 2020-01-21 | Kla-Tencor Corporation | Voltage contrast based fault and defect inference in logic chips |
| CN107833843A (en) * | 2017-11-02 | 2018-03-23 | 武汉新芯集成电路制造有限公司 | The analysis method and analysis system of defect source, defect detecting device |
| CN113302478A (en) * | 2019-01-10 | 2021-08-24 | 朗姆研究公司 | Defect classification and source analysis for semiconductor devices |
| CN117878025A (en) * | 2024-03-11 | 2024-04-12 | 江苏芯德半导体科技有限公司 | Method for automatically clamping and controlling defective chips on wafer map |
| CN117878025B (en) * | 2024-03-11 | 2024-05-28 | 江苏芯德半导体科技有限公司 | Method for automatically clamping and controlling defective chips on wafer map |
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| CN1321445C (en) | 2007-06-13 |
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