CN1677247A - Method for stripping positive-phase anti-corrosion film, method for making exposure mask and anti-corrosion agent stripping device - Google Patents
Method for stripping positive-phase anti-corrosion film, method for making exposure mask and anti-corrosion agent stripping device Download PDFInfo
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- CN1677247A CN1677247A CNA2005100597013A CN200510059701A CN1677247A CN 1677247 A CN1677247 A CN 1677247A CN A2005100597013 A CNA2005100597013 A CN A2005100597013A CN 200510059701 A CN200510059701 A CN 200510059701A CN 1677247 A CN1677247 A CN 1677247A
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- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63H—TOYS, e.g. TOPS, DOLLS, HOOPS OR BUILDING BLOCKS
- A63H33/00—Other toys
- A63H33/04—Building blocks, strips, or similar building parts
- A63H33/06—Building blocks, strips, or similar building parts to be assembled without the use of additional elements
- A63H33/08—Building blocks, strips, or similar building parts to be assembled without the use of additional elements provided with complementary holes, grooves, or protuberances, e.g. dovetails
- A63H33/084—Building blocks, strips, or similar building parts to be assembled without the use of additional elements provided with complementary holes, grooves, or protuberances, e.g. dovetails with grooves
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- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63H—TOYS, e.g. TOPS, DOLLS, HOOPS OR BUILDING BLOCKS
- A63H33/00—Other toys
- A63H33/04—Building blocks, strips, or similar building parts
- A63H33/06—Building blocks, strips, or similar building parts to be assembled without the use of additional elements
- A63H33/08—Building blocks, strips, or similar building parts to be assembled without the use of additional elements provided with complementary holes, grooves, or protuberances, e.g. dovetails
- A63H33/082—Building blocks, strips, or similar building parts to be assembled without the use of additional elements provided with complementary holes, grooves, or protuberances, e.g. dovetails with dovetails
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- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63H—TOYS, e.g. TOPS, DOLLS, HOOPS OR BUILDING BLOCKS
- A63H33/00—Other toys
- A63H33/04—Building blocks, strips, or similar building parts
- A63H33/06—Building blocks, strips, or similar building parts to be assembled without the use of additional elements
- A63H33/08—Building blocks, strips, or similar building parts to be assembled without the use of additional elements provided with complementary holes, grooves, or protuberances, e.g. dovetails
- A63H33/086—Building blocks, strips, or similar building parts to be assembled without the use of additional elements provided with complementary holes, grooves, or protuberances, e.g. dovetails with primary projections fitting by friction in complementary spaces between secondary projections, e.g. sidewalls
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention provides a method for stripping positive-phase anti-corrosion film, method for making exposure mask and anti-corrosion agent stripping device, which requires no special management prescribed by the Fire Service Law and various environmental laws, enables processing with low cost, and requires no large-scale processing apparatus for a large substrate. The resist film substrate has a positive resist film, and the surface of the resist film is exposed, and then the resist film contacts with the treating liquid which can partly dissolve the exposed resist film, so that the positive-phase anti-corrosion film is peeled off from the substrate. A thin film as transferal mask pattern is set on the substrate to form mask plate. A preset positive-phase anti-corrosion pattern for serving as mask is formed on the mask plate, the exposed thin film is etched to form preset pattern, therefore the mask for exposing is obtained. The positive-phase anti-corrosion pattern is peeled off by exposing the residual anti-corrosion pattern and then contacting with the treating liquid. A anti-corrosion mask stripping device comprises an exposure room, treatment room and device for conveying substrate.
Description
Technical field
The present invention relates to be widely used in the positive etchant resist in the manufacturing process of image documentation equipments such as photomask, semiconductor device, liquid crystal indicator stripping means, use the manufacture method and the etchant resist stripping off device of the exposure mask of positive etchant resist.
Background technology
In the past, carried out the manufacturing of semiconductor and display device by the lithographic techniques that adopts photomask.This photomask is to form the trickle pattern (transfer printing pattern) is made up of the film of metal etc. and formation on substrates such as glass.Photomask is applied to utilize the exposure device (pattern transfer device) that has photomask that trickle pattern is carried out in the operation of pattern transfer printing to transfer printing body (the equipment substrate that has etchant resist).
The general reduced projection exposure device that uses, the reduced size that projects into such as 1/5 of pattern on the photomask at this moment when semiconductor device is made.On the other hand, when making liquid crystal indicator display device such as (to call LCD in the following text), use mask aligner, this is a kind of exposure device that adopts the Exposure mode in batch that waits times.Varying in size of the photomask that photomask that steeper is used and mask aligner are used.The photomask that steeper is used (right angle) generally is 5 inches angles (127mm * 127mm) or 6 inches angles (squares of 152.4mm * 152.4mm).But the photomask that mask aligner is used generally is based on the rectangle of display and TV display frame size, and size is also than big (Yi Bian arbitrarily all more than the 300mm) at right angle, so be called large-scale mask.And this large-scale mask is owing to there is large tracts of land display frame to reach the manufacturing requirement that once shows a plurality of pictures, and the size of substrate is more prone to maximize.
In addition, this photomask trickle pattern of being to use its mother matrix promptly to form regulation at the mask plate that has formed above-mentioned film on the substrate and on its film obtains.The general manufacturing process of photomask is described as follows with reference to figure 2.
At first, prepare mask plate (S21), this mask plate forms the light-proofness film that is made of materials such as metal or its alloys and forms on transparency carriers such as quartz glass.Then, on this mask plate, form etchant resist (S22) comprehensively.Usually, carry out heat treated (prebake) after being coated on etchant resist on the mask plate.Etchant resist has two kinds, and a kind of is that the exposure position solidify to form the negative etchant resist that is insoluble to developer solution after cross-linking reaction, and another kind is to form the positive etchant resist that dissolves in developer solution after the micromoleculeization of exposure position.But be accompanied by the requirement of the high granular of mask pattern in recent years, what use mostly is the positive etchant resist.
Then, at the fixed drawing plotting (exposure) of the enterprising professional etiquette of the mask plate that is covered with this etchant resist (S23),, on mask plate, form pattern against corrosion by carry out development treatment (S24) with developer solution.
Then, this pattern against corrosion as mask, is removed the light-proofness film (S25) that exposes by etching.Like this, on substrate, just formed the photomask of light-proofness film for the pattern shape of regulation.Remaining pattern against corrosion is peeled off removal (S26) with special-purpose anticorrosive additive stripping liquid controlling.
Known in addition also have following mask, for example formed the laminated reflective film of reflex exposure light and the reflective mask of the pattern shape absorber film that absorbs exposure light on substrate; Formed the phase drift mask of phase drift (phase shift) film on the substrate; The gray-tone masks that are formed with light shielding part, GTG (gray tone) portion and transmittance section on substrate that perhaps use in the manufacturing of liquid crystal indicator etc. are also taked when making these photomasks and above-mentioned identical lithography operation.
In addition, when device for image such as use photomask manufacturing semiconductor device and liquid crystal indicator, also adopt the lithography operation.
Yet, after the lithography operation finishes,, use special-purpose anticorrosive additive stripping liquid controlling (producer of resist sells) to peel off removal generally speaking as mentioned above for useless pattern against corrosion.In patent documentation 1, the method of having expressed another kind of removal photoresist, it contacts by making photoresist and ozone gas and photoresist remove solution (or the photoresist that contains ozone gas is removed solution), will remove photoresist after the photoresist oxygenolysis.
Yet, use in the method for above-mentioned special-purpose anticorrosive additive stripping liquid controlling, own no problem to peeling off of resist, but used the chemicals of the management object that belongs to fire service law and various Environmental Laws in the composition of anticorrosive additive stripping liquid controlling, so untapped anticorrosive additive stripping liquid controlling is needed management naturally, also must carry out strict control for waste liquid, so the liquid waste processing expense has increased the pressure of cost.The substrate area of especially large-scale mask is very big, must use a large amount of anticorrosive additive stripping liquid controllings, and along with substrate size is to the tendency of large scale development in recent years, this problem is more and more serious.
In the method for the removal photoresist of expressing in the above-mentioned patent documentation 1, if use pure water, acidic aqueous solution and alkaline aqueous solution etc. are removed solution as photoresist, need not carry out special management based on fire service law and various Environmental Laws, aspect environment, make moderate progress, but must prepare the ozone supply pipeline, recycling ozone and/or etchant resist are removed the process tank of solution etc., prevent that the ozone that is imported into and etchant resist from removing in the operation and produce gas but also must have, closed container that steam etc. leak even expensive special-purpose etchant resist removal device are so these expenses also become the key factor that cost increases.
In order to address the above problem, expressed following method in the patent documentation 2: by the ultraviolet ray irradiation remaining pattern against corrosion is exposed, develops, thereby pattern against corrosion is peeled off removal.In order to remove the residue of resist fully, shine with UV-lamp in the time of rotary plate, make etchant resist be subjected to irradiates light by the reflective mirror on the exposure room inwall and comprehensively shine.
But said method need have the device of spinfunction in the patent documentation 2, during the similar large substrate of used large-scale mask, needs large-scale extensive treating apparatus, so and improper under handle making such as situations such as liquid crystal control panels.
[patent documentation 1] spy opens the 2000-147793 communique
[patent documentation 2] spy opens flat 6-164101 communique
Summary of the invention
Therefore, purpose of the present invention is exactly the problem that will solve in the past, provide a kind of need not be based on the special management of fire service law and various Environmental Laws, can handle and large substrate also be need not the stripping means of the positive etchant resist of large-scale treating apparatus, the manufacture method and the resist stripping off device of exposure mask with low cost.
In order to solve above-mentioned problem, the present invention has following formation.
(constituting 1) positive etchant resist stripping means, it is characterized by: the face against corrosion and the light irradiation device direction according to the rules that will be covered with the substrate of positive etchant resist relatively move, after making this face exposure against corrosion, by making the etchant resist that exposed and the treating fluid of the resist dissolving that exposed can be contacted, thereby the positive etchant resist is peeled off removal from aforesaid substrate.
(constituting 2) is as constituting the stripping means of 1 described positive etchant resist, it is characterized by: described substrate with positive etchant resist is that described one patterned operation comprises the exposure process and the developing procedure of positive etchant resist at the substrate of implementing to have after the one patterned operation forms the pattern of stipulating remaining positive etchant resist on the film that is arranged on the substrate.
(constituting 3) as constituting the stripping means of 2 described positive etchant resists, is characterized by: use the developer solution that uses in the described developing procedure as described treating fluid.
The manufacture method of (constituting 4) exposure mask, wherein, substrate is provided with as the positive pattern against corrosion that forms regulation on the mask plate of the film of transfer mask pattern, should pattern against corrosion as mask, remove the described film that exposes by etching, thereby carry out the one patterned operation, it is characterized by: pattern against corrosion remaining after the described one patterned operation and light irradiation device direction are in accordance with regulations relatively moved, after making this pattern exposure against corrosion, contact with the treating fluid that can dissolve the resist that has exposed by the pattern against corrosion after will exposing, peel off and remove pattern against corrosion.
(constituting 5) is as constituting the manufacture method of 4 described exposure masks, it is characterized by: developer solution used when using the pattern against corrosion that forms regulation on described mask plate is as described treating fluid, and used developing apparatus when using the pattern against corrosion that forms regulation on described mask plate makes the pattern against corrosion after the exposure contact with described developer solution.
(constituting 6) resist stripping off device, it is used for after the face exposure against corrosion of the substrate with positive etchant resist, the etchant resist that has exposed is contacted with the treating fluid that can dissolve the resist that has exposed, the positive etchant resist is peeled off removal from described substrate, it is characterized by: this stripping off device has exposure room, the light irradiation device that it has the holding device that keeps described substrate and is provided with towards the face against corrosion of described substrate; Process chamber is used for the resist that has exposed is peeled off removal, and it has holding device that keeps described substrate and the treating fluid feedway that the treating fluid that can dissolve the resist that has exposed is provided to the face against corrosion of described substrate; And substrate transfer apparatus, it is used for described substrate is carried to described process chamber from described exposure room.
(constituting 7) as constituting 6 described resist stripping off devices, is characterized by: be used to keep the holding device of substrate to keep the etchant resist of described substrate to tilt towards oblique upper in described exposure room and the described process chamber.
According to constituting 1, in the stripping means of positive etchant resist of the present invention, after the face exposure against corrosion of the substrate by will being covered with the positive etchant resist, the etchant resist that has exposed is contacted with the treating fluid that can dissolve the resist that has exposed, thereby make the positive etchant resist be stripped from removal from substrate.
The positive resist is exposure in a single day, and high polymer main chain is cut off by the energy that is shone, thereby forms micromolecule, so can be dissolved in predetermined process liquid.Therefore, adopt 1 the method that constitutes,, can peel off from substrate and remove the positive etchant resist, thereby can utilize easy operation to handle with low cost by etchant resist exposure process and the operation that etchant resist is contacted with the predetermined processing liquid phase subsequently.In addition, the treating fluid of the resist that above-mentioned dissolving has exposed can be managed especially based on fire service law and various Environmental Law, thereby has reduced the expenditure of costs such as liquid waste processing.In addition, as constitute described in 1, carry out the exposure of this face against corrosion owing to relatively moving, so even also can carry out rayed without whirligig to the whole face of resist face for large substrate by face against corrosion and light irradiation device direction according to the rules.
For example as constituting as described in 2, implement to comprise positive etchant resist exposure process and developing procedure in interior one patterned operation to being arranged at film on the substrate, form after the pattern of regulation, can peel off with the method for above-mentioned formation 1 and remove remaining positive etchant resist.The positive etchant resist of this moment refers to the pattern shape etchant resist that forms on the film on the substrate, as mask, removes the film that expose by etching with this pattern against corrosion, forms the pattern of regulation on the film on the substrate.Form on the film of substrate after the pattern of regulation like this, remaining pattern against corrosion becomes unnecessary material, must be removed.Use 1 the method that constitutes,,, can only pattern against corrosion be peeled off removal from substrate then by pattern against corrosion is contacted with the predetermined process liquid phase with remaining pattern exposure against corrosion.
According to constituting 3, use developer solution used in the above-mentioned developing procedure as described treating fluid, can peel off and remove remaining positive etchant resist.
Therefore,, peel off from substrate and to remove the operation of peeling off remaining pattern against corrosion, the developing procedure in the time of can be corresponding to the pattern against corrosion that on the film of substrate, forms regulation by constituting 3 method.In addition, the developer solution of the general positive resist that uses need not be managed especially based on fire service law and various Environmental Law, can reduce the cost of liquid waste processing etc.When peeling off removal pattern against corrosion, be the developer solution of positive resist owing to what use, so can not make the film on the substrate rotten.
As constitute described in 4, substrate is provided with the positive pattern against corrosion as formation regulation on the mask plate of the film of manifolding transfer mask pattern, should pattern against corrosion as mask, the described film that has exposed is carried out etching, thereby carry out the one patterned operation, in the manufacture method of this exposure mask, after pattern exposure against corrosion remaining after the described one patterned operation, contact with the treating fluid that can dissolve the resist that has exposed by the pattern against corrosion after will exposing, peel off and remove pattern against corrosion.That is, the operation by implementing exposure pattern against corrosion and make it to realize peeling off of resist with the contacted operation of above-mentioned treating fluid, and do not use special chemicals in order to peel off resist, only adopt easy operation to handle with low cost.Moreover, according to constituting 4, carry out the exposure of this face against corrosion owing to relatively moving, so even also can carry out rayed without whirligig to the whole face of resist face for large substrate by face against corrosion and light irradiation device direction according to the rules.
As constitute as described in 5, developer solution used when use forms the pattern of stipulating against corrosion on described mask plate is as described treating fluid, and use developing apparatus used when on described mask plate, forming the pattern of stipulating against corrosion, pattern against corrosion after the exposure is contacted with described developer solution, can finish peeling off of resist at developing apparatus whereby.In addition, the developer solution of the general positive resist that uses need not be managed especially based on fire service law and various Environmental Law, so can reduce the cost of liquid waste processing etc.In addition, peeling off when removing pattern against corrosion, so can not make the rotten of the transfer mask pattern that forms on the substrate because what use is the developer solution of positive resist.
By constituting 6 resist stripping off device, etchant resist is being carried out light-struck exposure room and in the process chamber of etchant resist supply predetermined process liquid, etchant resist is being handled, so can from substrate, the positive etchant resist be peeled off removal, can handle substrate with low cost by easy operation.In addition, dissolving the used treating fluid of the above-mentioned resist that has exposed need not manage especially based on fire service law and various Environmental Law, so can reduce the cost that is used for aspects such as liquid waste processing.In addition, utilize substrate transfer apparatus, can carry out continuously the illumination of etchant resist and the processing operation for the treatment of fluid.
According to constituting 7, being used to keep the holding device of substrate in exposure room and process chamber is to keep the etchant resist of described substrate to tilt towards oblique upper, so compare in the horizontal direction with the face against corrosion of substrate, can save the space, be particularly useful for processing to large substrate.
The present invention peels off removal in order to remain on the substrate positive etchant resist under useless or other situations from substrate, implements following operation successively: the operation of the exposure of etchant resist, make etchant resist that has exposed and the contacted operation for the treatment of fluid that can dissolve the resist that has exposed.Thus, the positive etchant resist can be peeled off removal from substrate, with low cost substrate be handled by easy operation.In the present invention, can use developer solution used in the developing procedure as peeling off the treating fluid of removing the positive etchant resist, so need not to use special chemicals just can peel off etchant resist.And the developer solution of normally used positive resist need not be managed especially based on fire service law and various Environmental Law, does general processing for waste liquid and gets final product, so can reduce the cost of liquid waste processing etc.And then, thereby being relatively moved, face against corrosion and light irradiation device direction according to the rules carries out the exposure of face against corrosion, so also can carry out whole rayed without whirligig to the face against corrosion of large substrate.
Use the stripping means of the present invention, can reduce the production cost of exposure mask the positive etchant resist.
Description of drawings
Fig. 1 is the figure of the manufacturing process of expression exposure mask of the present invention.
Fig. 2 is the figure that represents the manufacturing process of exposure mask in the past.
Fig. 3 is the front view (FV) of the resist stripping off device of one embodiment of the present invention.
Fig. 4 is the side cut away view of charging/discharge chamber of the resist stripping off device of one embodiment of the present invention.
Fig. 5 is the side cut away view of exposure room of the resist stripping off device of one embodiment of the present invention.
Fig. 6 is the side cut away view of process chamber of the resist stripping off device of one embodiment of the present invention.
Fig. 7 is the structural representation of CAP coater.
Label declaration
S11 mask plate preparatory process
The S12 etchant resist forms operation
The S13 exposure process
The S14 developing procedure
The S15 etching work procedure
The S16 exposure process
S17 uses the treatment process of developer solution
1 resist stripping off device
2 charging/discharge chamber
3 exposure rooms
4 process chambers
20 substrates
30 shower type nozzles
Embodiment
The present invention is described in detail below to borrow embodiment.
About embodiments of the present invention, be exemplified below.
[embodiment 1]
Embodiments of the present invention 1 are the stripping meanss of positive etchant resist, wherein, after the face exposure against corrosion of the substrate that is covered with the positive etchant resist, the etchant resist that has exposed is contacted with developer solution, thereby the positive etchant resist is peeled off removal from aforesaid substrate.In the present embodiment, use developer solution that the positive etchant resist is developed treating fluid as the dissolving exposed resist.
In the above-mentioned embodiment 1, as the above-mentioned positive etchant resist that is covered on the substrate, can enumerate following etchant resist: by being arranged at enforcement one patterned operation on the film of substrate, form behind the transfer mask pattern of regulation and the positive etchant resist of remaining positive etchant resist and resist-coating failure wherein, described one patterned operation comprises the pattern operation against corrosion that forms regulation by the exposure process of positive etchant resist and developing procedure.As the single or multiple lift film being set and on this film, forming the form of the transfer mask pattern of regulation, can enumerate the exposure mask that is used to make semiconductor device and liquid crystal indicator etc., semiconductor device, liquid crystal indicator (display panels) etc. on the substrate.When in the manufacturing process of these exposure masks or various devices, needing again painting erosion resistant agent, can peel off the bad positive etchant resist of removal by above-mentioned embodiment 1 because of resist-coating failure.And, after the optical processing of one patterned finishes, can remove remaining useless positive etchant resist.
Etchant resist can use painting erosion resistant agents such as rotating coater, slit coater or CAP coater and obtain, so-called CAP coater be the coating fluid that will utilize siphonage to rise from nozzle in towards under coated face contact, and substrate and nozzle are relatively moved, painting erosion resistant agent thus.
Above-mentioned positive resist is known for example to be had, the main chain cut-off type resist that is formed by the higher macromolecule resin of viscosity such as polybutene-1-sulfone, poly (glycidyl methacrylate); Or the molten type resist of forming by phenolics and resistance solvent etc. of resistance etc.
Remaining positive etchant resist on the bad positive etchant resist of resist-coating failure, the one patterned operation metacoxal plate is exposed, and etchant resist just dissolves in developer solution, with developer solution useless etchant resist is peeled off removal subsequently.
At this moment, the wavelength of exposure is that the interior wavelength of scope of the wavelength photoreceptor of positive etchant resist gets final product, and especially uses and shines then better to the exposure light source in the high wavelength coverage of above-mentioned positive etchant resist susceptibility.As for exposure, because purpose is to peel off the removal etchant resist, so the exposure of for example preferably bestowing is greater than forming the usual necessary exposure of pattern against corrosion.Especially the pattern against corrosion of etching mask is because etching forms the surfaction layer on pattern against corrosion surface sometimes, so in order to remove this surfaction layer, the exposure of preferably the bestowing exposure more required than formation pattern against corrosion usually is more.
Exposure method adopts following method: the face against corrosion and the light irradiation device direction according to the rules that will be covered with the substrate of positive etchant resist relatively move, whereby this face against corrosion of exposure.Specifically, use light irradiation device in a direction expansion of substrate, by substrate or light irradiation device are moved, thereby and make light irradiation device in scanning on the substrate with whole exposure of the etchant resist on the substrate.Adopt this method, can carry out irradiate light at an easy rate, even can carry out illumination continuously many substrates to large substrate.
As described in the present embodiment, adopt from substrate top the method that etchant resist is carried out illumination to peel off resist, for picture for example use the etchant resist that above-mentioned CAP coater is coated with at substrate side surfaces and the back side not made the peeling off of etchant resist of coating process of painting erosion resistant agent be particularly suitable.
Used developer solution is that the developer solution that is applicable to the positive photosensitive material gets final product after the exposure-processed.Except the developer solution of the positive photosensitive material special use used, owing to be in order to peel off the removal resist, so not necessarily must use special-purpose developer solution, importantly used treating fluid can dissolve the positive photosensitive material that has exposed.For example, be particularly suitable for using with NaOH (NaOH), potassium hydroxide alkaline matters such as (KOH) developer solution as major component.These developer solutions all do not use the chemicals of control in fire service law and the various Environmental Law, thus need not special management, easy to use.
In addition, the contact method of etchant resist and developer solution does not have special requirement to this moment, can choose following any means wantonly, for example: the substrate that will be covered with etchant resist is immersed in method in the developer solution, the method under developer solution is drenched from the top of the substrate that is covered with etchant resist or developer solution is sprayed on method on the substrate etc.
[embodiment 2]
Embodiment of the present invention 2 is manufacture methods of exposure mask, wherein, on the mask plate that is covered with transfer mask pattern film on the substrate, form the positive pattern against corrosion of regulation, should pattern against corrosion as mask, by the above-mentioned film that has exposed being etched with the operation of implementing one patterned, after remaining pattern exposure against corrosion, it is contacted with developer solution, peel off and remove pattern against corrosion.
Present embodiment is mainly used in to peel off when making exposure mask removes useless pattern against corrosion.
The manufacturing process that has shown the exposure mask that present embodiment is relevant among Fig. 1.
At first, prepare mask plate (S11), it is being formed with the film of desiring to be transferred on the transfer printing body (such as semiconductor substrate) that becomes the transfer printing pattern (such as photomask) on substrate.
Said mask plate can be any one in transmission-type mask plate, the reflective mask plate among the present invention, all have film in their structure on substrate, this film can make exposure light generation optical change and as the transfer printing pattern of desiring to be transferred on the transfer printing body.
The substrate of transmission-type mask plate uses is light-transmitting substrate such as glass substrate.Make exposure light generation optical change be meant the photomask that hides exposure light or make the phase drift film that the phase place of exposure light changes (the phase drift film comprises the mesh impregnation film (halftone film) of tool shade function and phase drift function etc.So the transmission-type mask plate comprises the optical mask that is formed with photomask, the phase drift mask plate that is formed with phase drift film (containing mesh impregnation film) etc.
In addition, also comprise becoming gray-tone mask, be used to make liquid crystal indicator, light shielding part, semi light transmitting part and transmittance section are arranged on substrate, and comprise the mother matrix of making this gray-tone mask, for example on substrate, formed the mask plate of semi-transparent film and photomask.
What the reflective mask plate used is the little substrate of thermal expansivity, and it is the light reflection multilayer film to be arranged and as the mask plate of the absorber of light film of transfer printing pattern on substrate.The optical change that produce exposure light this moment refers to the light reflection multilayer film of reflex exposure light and the absorber of light film of blocking exposure light etc.
When making these mask plates (substrate that has film),, forming as the film of desiring to be transferred to the transfer printing pattern on the transfer printing body on the substrate by sputtering method, vapour deposition method, CVD method etc.
Next, on whole of this mask plate, form positive etchant resist (S12).When forming the positive etchant resist, the positive anticorrosive additive material is dissolved in the solvent, is coated on the mask plate after being modulated into the resist-coating liquid of proper viscosity, form the positive etchant resist thus.Usually after being coated with etchant resist on the mask plate, carrying out heat treated (prebake).
Then, on this is covered with the mask plate of positive etchant resist, describe the pattern (S13) of (exposure) regulation, utilize developer solution to carry out development treatment (S14), thereby on mask plate, form pattern against corrosion.The exposure of being carried out when forming pattern against corrosion adopts the laser drawing apparatus with single wavelength LASER Light Source to carry out scan exposure usually.
Then, as mask, the film etching that has exposed is removed, made film form pattern shape (S15) with this resist pattern.If reflective mask then is that the absorber of light film of the superiors forms the pattern shape.
Like this, just made film has formed the pattern shape of regulation on substrate exposure mask.
For the resist pattern that no longer needs,, peel off removal by the treatment process (S17) of exposure process (S16) and use developer solution according to the method identical with the embodiment of front.At this moment, preferably carry out front used developing procedure when on mask plate, forming the pattern against corrosion of regulation once again, make exposure afterwards remaining pattern against corrosion contact with developer solution.So, in the optical processing operation of pattern, just can carry out peeling off of resist, realized the simplification of operation.In addition, no longer need the production line that the resist stripping process is used is set especially, also can obtain on the equipment simplifying.In addition, when the remaining pattern against corrosion in back that will expose contacted with developer solution, used developing method also was preferred when using the resist pattern to form.
Wherein, peel off that to remove conditions of exposure and development conditions that the required conditions of exposure (exposure wavelength, exposure, exposure method etc.) of pattern against corrosion and development conditions (kind of developer solution, development time, developing method etc.) can be when forming pattern against corrosion identical, also can be different.It is tight needn't be as formation resist pattern the time to peel off the setting of removing required conditions of exposure of resist pattern and development conditions.
Because the purpose of exposure is to peel off resist, so the exposure of the exposure more (such as 2 times or 2 times or more) more required than common formation pattern against corrosion preferably is provided.Make when being covered with the photomask of chromium (Cr) photomask on the substrate, what etching solution used is the etching solution (generally being ammonium ceric nitrate and perchloric acid) that is used for the Wet-type etching of chromium, upgrading takes place in pattern against corrosion surface, exposure is become insensitive, so, make pattern against corrosion easily be peeled off removal by increasing exposure, powerful energy being provided.
Because purpose is that resist is peeled off from substrate,, also can take linear operating type to handle continuously so the developing method of peeling off when removing pattern against corrosion can disposablely be handled many plates simultaneously.
In the embodiments of the present invention, be provided with exposure device being used to peel off add in the developing apparatus of removing pattern against corrosion, handle and remove operation peeling off of interior pattern against corrosion and can in same device, carry out continuously so comprise exposure and developer solution.In addition, because be set up in parallel developing apparatus and exposure device simultaneously, comprise exposure and developer solution and handle and to remove operation peeling off of interior pattern against corrosion and carry out continuously so can make by the carrying between these two devices that are set up in parallel.
[embodiment 3]
Embodiment of the present invention 3 is resist stripping off devices, it is used for will be covered with after the face exposure against corrosion of substrate of positive etchant resist, by the etchant resist that has exposed is contacted with the treating fluid of the resist dissolving that can will expose, peel off from aforesaid substrate and remove the positive etchant resist.This resist stripping off device has as lower unit: exposure room, the light irradiation device that it has the holding device that keeps aforesaid substrate and is provided with towards the face against corrosion of aforesaid substrate; Process chamber is used for the resist that has exposed is peeled off removal, and it has holding device that keeps aforesaid substrate and the treating fluid feedway that the treating fluid that can dissolve the resist that has exposed is provided to the face against corrosion of aforesaid substrate; And substrate transfer apparatus, it is carried to above-mentioned process chamber with aforesaid substrate from above-mentioned exposure room.
Fig. 3 is the front view (FV) of the resist stripping off device of present embodiment.Fig. 4 is the side cut away view of charging/discharge chamber of the resist stripping off device of present embodiment.Fig. 5 is the side cut away view of exposure room of the resist stripping off device of present embodiment.Fig. 5 is the side cut away view of process chamber of the resist stripping off device of present embodiment.
To shown in Figure 6, in the resist stripping off device 1 of present embodiment,, all the angle of inclination is defined as α in each chamber as Fig. 4 for the first type surface that makes substrate 20 keeps tilting obliquely upward.
As shown in Figure 3, in the resist stripping off device 1, the right side from figure begins, and is provided with charging/discharge chamber 2, exposure room 3, process chamber 4 simultaneously.In addition, along the back side of each chamber, a lot of passive roll shafts 12 have just been settled up and down at a certain distance.Each support is held axle 13 with roll shaft 12 at above-below direction and supports and can rotate freely with axle.Along the back side, left and right directions has also been settled the passive roll shaft 12 with spline structure.Like this, each support is that the center can rotate freely with roll shaft 12 with the retainer shaft 13 that is parallel to described back side 1B.Mounting substrate 20 on a plurality of supports usefulness roll shafts 12 that the back side 1B along each chamber interior settles, the back side of substrate 20 is (with the face of first type surface opposition side, promptly with the face of face opposition side against corrosion) support to contact with each with the side face of roll shaft 12, substrate 20 can move (slip) when taking out of so substrate 20 is moved at the left and right directions that returns charging/discharge chamber 2 from charging/discharge chamber 2 to exposure room 3, from exposure room 3 to process chamber 4, from process chamber 4.In addition, settled the roll shaft 14 of a transportation in the lower end of substrate 20, it with the perpendicular axle of above-mentioned back side 1B be that the center can rotate freely, the lower end that keeps groove 14A and the substrate 20 support effect of having joined is arranged on every side, when above-mentioned carrying is rotated with roll shaft 14, can be with substrate 20 move left and right.As mentioned above, the lower end of substrate 20 is provided with passive structure, so can be applicable to the substrate of different size dimensions.
Below each chamber is elaborated.
As shown in Figure 4, substrate 20 is placed on carrying with on the roll shaft 14, takes out of for substrate being moved into, and the positive 1A side of charging/discharge chamber 2 forms unlimited box shape.
As shown in Figure 5, in the adjacent exposure room 3 of charging/discharge chamber 2, with surperficial relative internal face substrate 20 light irradiation devices 15 such as uviol lamp are housed positive 1A side.
As shown in Figure 6, in the process chamber 4 adjacent with exposure room 3, be furnished with shower type nozzle 30 (with reference to Fig. 3) as described treating fluid feedway, it supplies with treating fluid in edge direction of substrate 20 (in the present embodiment substrate 20 vergence directions about (indulging) direction) approximate equality ground relatively.In addition, this shower type nozzle 30 is keeping the spaced and parallel of regulation to be arranged at the top of board main with the first type surface of substrate 20, along with the perpendicular direction of an above-mentioned edge direction, be left and right directions (direction of arrow among Fig. 3) in the present embodiment, in the enterprising line scanning of board main.This shower type shower nozzle 30 has whenever kept at a certain distance away a plurality of nozzle bore 31 (with reference to Fig. 6 along its surperficial length direction on the whole in a tubular form.Among Fig. 6 for conveniently having omitted the diagram of nozzle 30), in case provide the treating fluid of regulation hydraulic pressure to shower type nozzle 30, such as developer solution will spray developer solution from each nozzle bore 31 of shower type nozzle 30.In the present embodiment because shower type nozzle 30 is vertically to be provided with along the above-below direction of substrate 20, so can to the above-below direction approximate equality of substrate 20 treating fluid is provided.Therefore, scan on the first type surface of substrate 20 along left and right directions, can on the whole first type surface of substrate 20, spray treating fluid in approximate equality ground by shower type nozzle 30.
Below the resist stripping off device 1 that uses present embodiment is peeled off resist order describe.At first, the substrate-placing that is covered with etchant resist is used on the roll shaft 14 in the carrying of charging/discharge chamber 2.Make then carrying with roll shaft 14 with the rotation of certain speed, substrate 20 sent to certain speed and by exposure room 3.At this moment, make light irradiation device 15 in the exposure room 3 remain on the state of connection.Make it to stop after then will sending process chamber 2 to by the substrate 20 of exposure room.Use whole the supply treating fluid of shower type nozzle 30 then, thereby resist is peeled off removal to substrate 20.And then, wash with whole the sprinkling pure water of shower type nozzle 30 to substrate 20.Thereafter, carrying reverses with roll shaft 14, and substrate 20 is moved to charging/discharge chamber 2, and the exposure room 3 that is in closed condition from the power supply of light irradiation device 15 passes through, and is carried to charging/discharge chamber 2, after stopping with substrate 20 taking-ups.With this order, can carry out illumination and use treating fluid that it is handled etchant resist continuously.
Use the resist stripping off device 1 of present embodiment,, will also can save the space after the increasing of angle of inclination even for large substrate.To as can be known shown in Figure 6, the depth (D) of the resist stripping off device 1 of present embodiment is littler than the size of substrate as Fig. 4.In view of this, as previously mentioned, the angle of inclination of substrate is more than or equal to 25 degree, is preferably greater than to equal 45 and be particularly suitable for large substrate when spending.By increasing the angle of inclination of substrate,,,, and can carry out the high processing of homogeneity so processing power is strong owing to can spray treating fluid to the Zone Full of board main even the speed that flows down for the treatment of fluid accelerates.Therefore, resist stripping off device of the present invention is particularly suitable for monolateral at least the peeling off in the resist of the large substrate that equals 300mm of growing up.That is to say,, also can carry out the resist lift-off processing that processing power is strong and homogeneity is high simultaneously saving the space even for large substrate.
In addition, in the above-described embodiment,, between them, can also insert structural arrangements with other functions although charging/discharge chamber 2 is in position adjacent with exposure room 3, exposure room 3 respectively with process chamber 4.Such as, between exposure room 3 and process chamber 4, insert the hothouse of supplying air, be used for the substrate behind the develop is carried out drying.Different functions can also be annexed and be arranged in the Room.
By the following examples embodiments of the present invention are carried out specific description more.
(embodiment 1)
In size is on the synthetic quartz glass substrate of 330mm * 450mm, by sputtering method lamination chromium film and chromium oxide film successively, obtains being used to make the large-scale mask plate that has formed photomask and antireflection film on substrate of liquid crystal indicator.
On the mask plate of making, formed the positive etchant resist behind use spinner (rotary coating device) the rotary coating positive liquid against corrosion.The sensitization PBS (polybutene-1-sulfone) that uses the high molecular type is as the positive resist, is dissolved in solution behind the methyl Cellosolve acetate as liquid against corrosion with it.In addition, be coated with above-mentioned liquid against corrosion after, use the heat drying device to carry out the predetermined heating dried.
Then, use exposure device (laser drawing apparatus), then use principal ingredient to carry out development treatment, on mask plate, form the pattern against corrosion of regulation as the developer solution of potassium hydroxide (KOH) to being covered with the mask board to explosure of positive etchant resist.The temperature conditions of above-mentioned development treatment is that 23 ℃, processing time are 60 seconds.
Then, above-mentioned pattern against corrosion as mask, is removed chromium oxide film and the chromium film that has exposed by wet etch process, on substrate, make chromium photomask and antireflection film form the pattern shape of regulation.Used etching solution is the aqueous solution of ammonium ceric nitrate and perchloric acid.
Then remove remaining pattern against corrosion, carry out the development treatment of exposure-processed and developer solution in order to peel off.Use during exposure-processed and carry out whole exposure with mercury vapor lamp as the exposure device of light source.Because the surface of considering the resist pattern is by above-mentioned etching solution upgrading, so will set the time shutter more longerly, it be more than forming the required exposure of pattern against corrosion usually to make exposure.Development conditions when using condition that developer solution handles and above-mentioned formation pattern against corrosion is roughly the same.Like this, by the processing of exposure-processed and use developer solution, remaining pattern against corrosion can be peeled off removal.
By above method, the chromium photomask of the pattern shape that has formed regulation and the transmission-type exposure mask of antireflection film (the large-scale mask of liquid crystal indicator manufacturing) have been obtained on glass substrate, being covered with.
(embodiment 2)
Use the CAP coater, carry out the coating of resist in the liquid crystal indicator manufacturing made from embodiment 1 same procedure on large-scale mask plate.Used CAP coater specifically as shown in Figure 7 in the present embodiment, filled liquid 41 against corrosion in the liquid tank 42, the nozzle 43 that has capillary gap W is sunken in the liquid tank, nozzle 43 is risen near the first type surface (first type surface down) of substrate 40, according to siphonage, liquid 41 against corrosion rises to the tip of nozzle 43 from the W of capillary gap after, liquid 41 against corrosion contacts with the first type surface of substrate 40, meanwhile, the direction of substrate 40 according to arrow in the diagram moved, thereby at its surface coated etchant resist.When using this coating process, resist can appliedly not gone up in the side of substrate and the back side, so can use peeling off of resist of the present invention well.
Take the method identical with embodiment 1, be covered with the pattern against corrosion that forms regulation on the mask plate of positive etchant resist at this, be mask with this pattern against corrosion then, chromium oxide film and chromium film are carried out etch processes, make chromium photomask and antireflection film on the substrate form the pattern shape of stipulating.
Use the resist stripping off device of explanation in the above-mentioned embodiment 3 to peel off the remaining pattern against corrosion of removal.In addition, set suitable conditions of exposure in the exposure room, developer solution used during with formation resist pattern is as the treating fluid that provides in the process chamber.Then, use the stripping off device of resist, carry out illumination and use treating fluid to handle to resist, can peel off and remove remaining resist pattern by continuity ground.
By above method, the chromium photomask of the pattern shape that has formed regulation and the transmission-type exposure mask of antireflection film (the large-scale mask of liquid crystal indicator manufacturing) have been obtained on glass substrate, being covered with.
In above embodiment, be example with the manufacturing process of the exposure mask of transmission-type, the performance of removing the positive etchant resist of peeling off of the present invention has been made explanation, but unquestionable the present invention never only limits to present embodiment.Such as in the manufacturing process of the exposure mask of phase drift mask, gray-tone mask and the reflection-type that is mentioned before, also available method of the present invention is peeled off removal to the positive etchant resist.In addition, though do not mention among the embodiment, even in the manufacturing process of semiconductor device and liquid crystal indicator, also available method of the present invention is peeled off removal remaining positive etchant resist in the lithography operation.
Claims (7)
1, the stripping means of positive etchant resist, it is characterized by: the face against corrosion and the light irradiation device direction in accordance with regulations that will have the substrate of positive etchant resist relatively move, after making this face exposure against corrosion, contact with the treating fluid that can dissolve the resist that has exposed by the etchant resist after will exposing, peel off from described substrate and remove the positive etchant resist.
2, the stripping means of the positive etchant resist described in claim 1, it is characterized by: described substrate with positive etchant resist is that described one patterned operation comprises the exposure process and the developing procedure of positive etchant resist at the substrate of implementing to have after the one patterned operation forms the pattern of stipulating remaining positive etchant resist on the film that is arranged on the substrate.
3, the stripping means of the positive etchant resist described in claim 2 is characterized by: use the developer solution that uses in the described developing procedure as described treating fluid.
4, the manufacture method of exposure mask, substrate is provided with on the mask plate as the film of transfer mask pattern, form the positive pattern against corrosion of regulation, should pattern against corrosion as mask, the described film that has exposed is carried out etching, thereby carry out the one patterned operation, it is characterized by: pattern against corrosion remaining after the described one patterned operation and light irradiation device direction are in accordance with regulations relatively moved, after making this pattern exposure against corrosion, contact with the treating fluid that can dissolve the resist that has exposed by the pattern against corrosion after will exposing, make pattern against corrosion be stripped from removal.
5, the manufacture method of the exposure mask described in claim 4, it is characterized by: developer solution used when using the described pattern against corrosion that forms regulation on mask plate is as described treating fluid, and used developing apparatus when using the described pattern against corrosion that forms regulation on mask plate contacts the pattern against corrosion after the exposure with described developer solution.
6, the stripping off device of resist, it is used for after the face exposure against corrosion of the substrate with positive etchant resist, the etchant resist that has exposed is contacted with the treating fluid that can dissolve the resist that has exposed, the positive etchant resist is peeled off removal from described substrate, it is characterized by: this stripping off device has: exposure room, the light irradiation device that it has the holding device that keeps described substrate and is provided with towards the face against corrosion of described substrate; Process chamber is used for the resist that has exposed is peeled off removal, and it has holding device that keeps described substrate and the treating fluid feedway that the treating fluid that can dissolve the resist that has exposed is provided to the face against corrosion of described substrate; And substrate transfer apparatus, be used for described substrate is carried to described process chamber from described exposure room.
7, the resist stripping off device described in claim 6 is characterized by: be used to keep the holding device of substrate to keep the etchant resist of described substrate to tilt towards oblique upper in described exposure room and the described process chamber.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP200497077 | 2004-03-29 | ||
| JP2004097077 | 2004-03-29 | ||
| JP200569133 | 2005-03-11 | ||
| JP2005069133A JP2005317929A (en) | 2004-03-29 | 2005-03-11 | Method of peeling positive resist film, method of manufacturing exposure mask, and resist peeling device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1677247A true CN1677247A (en) | 2005-10-05 |
Family
ID=35049826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005100597013A Pending CN1677247A (en) | 2004-03-29 | 2005-03-29 | Method for stripping positive-phase anti-corrosion film, method for making exposure mask and anti-corrosion agent stripping device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2005317929A (en) |
| KR (1) | KR100680553B1 (en) |
| CN (1) | CN1677247A (en) |
| TW (1) | TW200537258A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101794089A (en) * | 2010-04-12 | 2010-08-04 | 常州瑞择微电子科技有限公司 | Resist removing method of electron beam resist optical mask plate and device thereof |
| CN101384957B (en) * | 2006-02-15 | 2013-01-09 | Hoya株式会社 | Mask blank and photomask |
| CN103399468A (en) * | 2013-08-08 | 2013-11-20 | 深圳市华星光电技术有限公司 | Method and device for stripping photoresist layer |
| CN104347352A (en) * | 2013-07-31 | 2015-02-11 | 细美事有限公司 | Apparatus and method for treating substrate |
| CN113176703A (en) * | 2021-03-26 | 2021-07-27 | 深圳市路维光电股份有限公司 | Mask stripping and photoresist removing method, manufacturing method and mask |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5412107B2 (en) * | 2006-02-28 | 2014-02-12 | Ｈｏｙａ株式会社 | Photomask blank manufacturing method and photomask manufacturing method |
| JP5363724B2 (en) * | 2007-12-13 | 2013-12-11 | Ｈｏｙａ株式会社 | Photomask blank, photomask, manufacturing method thereof, and coating apparatus |
| JP2009294682A (en) * | 2009-09-24 | 2009-12-17 | Hoya Corp | Mask blank and photomask |
| CN105045051B (en) * | 2015-08-24 | 2016-06-01 | 北京中科紫鑫科技有限责任公司 | The minimizing technology of photoresist material |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06164101A (en) * | 1992-11-18 | 1994-06-10 | Nec Ibaraki Ltd | Method for separating photosensitive coating |
| JPH09276773A (en) * | 1996-04-10 | 1997-10-28 | Dainippon Screen Mfg Co Ltd | Substrate treating device |
| JP2000147793A (en) * | 1998-11-12 | 2000-05-26 | Mitsubishi Electric Corp | Method for removing photoresist film and apparatus therefor |
| JP3629386B2 (en) * | 1999-07-23 | 2005-03-16 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| US6358856B1 (en) * | 2000-11-21 | 2002-03-19 | Advanced Micro Devices, Inc. | Bright field image reversal for contact hole patterning |
| JP3818188B2 (en) * | 2002-03-22 | 2006-09-06 | Ｔｄｋ株式会社 | Mask pattern forming method, patterning method using the mask pattern, and thin film magnetic head manufacturing method |
-
2005
- 2005-03-11 JP JP2005069133A patent/JP2005317929A/en active Pending
- 2005-03-25 TW TW094109303A patent/TW200537258A/en unknown
- 2005-03-29 KR KR1020050026086A patent/KR100680553B1/en not_active IP Right Cessation
- 2005-03-29 CN CNA2005100597013A patent/CN1677247A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101384957B (en) * | 2006-02-15 | 2013-01-09 | Hoya株式会社 | Mask blank and photomask |
| CN101794089A (en) * | 2010-04-12 | 2010-08-04 | 常州瑞择微电子科技有限公司 | Resist removing method of electron beam resist optical mask plate and device thereof |
| CN101794089B (en) * | 2010-04-12 | 2012-06-13 | 常州瑞择微电子科技有限公司 | Resist removing method of electron beam resist optical mask plate and device thereof |
| CN104347352A (en) * | 2013-07-31 | 2015-02-11 | 细美事有限公司 | Apparatus and method for treating substrate |
| CN104347352B (en) * | 2013-07-31 | 2018-05-29 | 细美事有限公司 | A kind of substrate board treatment and substrate processing method using same |
| CN103399468A (en) * | 2013-08-08 | 2013-11-20 | 深圳市华星光电技术有限公司 | Method and device for stripping photoresist layer |
| WO2015018101A1 (en) * | 2013-08-08 | 2015-02-12 | 深圳市华星光电技术有限公司 | Method and device for stripping photoresist layer |
| CN113176703A (en) * | 2021-03-26 | 2021-07-27 | 深圳市路维光电股份有限公司 | Mask stripping and photoresist removing method, manufacturing method and mask |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060044946A (en) | 2006-05-16 |
| TW200537258A (en) | 2005-11-16 |
| KR100680553B1 (en) | 2007-02-08 |
| JP2005317929A (en) | 2005-11-10 |
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Open date: 20051005 |