CN116736638A - Curing method of negative photoresist layer - Google Patents

Curing method of negative photoresist layer Download PDF

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Publication number
CN116736638A
CN116736638A CN202310700087.2A CN202310700087A CN116736638A CN 116736638 A CN116736638 A CN 116736638A CN 202310700087 A CN202310700087 A CN 202310700087A CN 116736638 A CN116736638 A CN 116736638A
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CN
China
Prior art keywords
negative photoresist
photoresist layer
substrate
curing
negative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310700087.2A
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Chinese (zh)
Inventor
李思拥
曾一鑫
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Truly Opto Electronics Ltd
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Truly Opto Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Truly Opto Electronics Ltd filed Critical Truly Opto Electronics Ltd
Priority to CN202310700087.2A priority Critical patent/CN116736638A/en
Publication of CN116736638A publication Critical patent/CN116736638A/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)

Abstract

The application relates to the technical field of display, in particular to a curing method of a negative photoresist layer. The method comprises the following steps: providing a substrate of a negative layer to be solidified, and cleaning the substrate until the substrate is clean; uniformly coating negative photoresist on the substrate to form a negative photoresist layer; pre-baking the substrate and the negative photoresist layer; exposing the negative photoresist layer through a mask plate by using UV light; developing the negative photoresist layer by using an alkaline developing solution to form a pattern corresponding to the light-transmitting region of the mask plate on the negative photoresist layer; irradiating the substrate with UV light with energy of 1200-1300mj/cm2 for 60-70 seconds at 35-40deg.C; and carrying out high-temperature curing on the negative photoresist layer. According to the method for curing the negative photoresist layer, when the negative photoresist layer is cured on the substrate, the adhesive force of the negative photoresist layer can be obviously improved, and the quality and the yield of a final display product are improved.

Description

Curing method of negative photoresist layer
Technical Field
The application relates to the technical field of display, in particular to a curing method of a negative photoresist layer.
Background
The negative photoresist, which is composed of a photosensitive resin synthetic material and a solvent as main components, is widely used in the manufacture of display products such as an OGS optical layer and an insulating layer, a color filter, a liquid crystal display material, a LENS, a display panel material, and the like.
The negative photoresist needs to be directly contacted with the substrate and left on the substrate in the use process, however, the existing method for curing the negative photoresist on the substrate has the problems of poor adhesion and unstable adhesion, which in turn leads to low quality of the final display product and low yield of the display product.
Disclosure of Invention
In order to solve the defects existing in the prior art, the application aims to provide a curing method of a negative photoresist layer, which improves the adhesive force of the negative photoresist in the use process.
In order to achieve the above object, the present application provides a method for curing a negative photoresist layer, comprising:
providing a substrate of a negative layer to be solidified, and cleaning the substrate until the substrate is clean;
uniformly coating negative photoresist on the substrate to form a negative photoresist layer;
pre-baking the substrate and the negative photoresist layer;
exposing the negative photoresist layer through a mask plate by using UV light;
developing the negative photoresist layer by using an alkaline developing solution to form a pattern corresponding to the light-transmitting region of the mask plate on the negative photoresist layer;
using 1200-1300mj/cm 2 Irradiating the substrate with energy UV light for 60-70 seconds at 35-40deg.C;
and carrying out high-temperature curing on the negative photoresist layer.
Further, the method further comprises:
before pre-baking the substrate and the negative photoresist layer, placing the substrate in a vacuum drying cavity, and performing low-pressure drying treatment on the negative photoresist layer.
Further, the method further comprises:
and after the substrate is cleaned, drying the substrate.
Further, the step of pre-baking the substrate and the negative photoresist layer includes:
and baking the substrate and the negative photoresist at a baking temperature of 80-85 ℃ for 50-60 s.
Further, the step of exposing the negative photoresist layer through a mask plate using UV light includes:
the exposure energy is 80-500 mj/cm with the wavelength of 365-405 nm 2 The negative photoresist layer is exposed through a mask plate.
Further, the method further comprises:
and cleaning the developing solution remained on the substrate and the negative photoresist layer by using deionized water, and drying the cleaned substrate and the cleaned negative photoresist layer.
Further, the step of performing high-temperature curing on the negative photoresist layer includes:
and baking the substrate and the negative photoresist layer for 15min to 1h at the temperature of 170 ℃ to 250 ℃ to enhance the adhesiveness of the negative photoresist layer and release the stress of the negative photoresist layer.
Further, the step of uniformly coating the negative photoresist on the substrate includes:
and uniformly coating the negative photoresist on the substrate through a coating machine.
Further, the substrate is made of at least one of polyethylene terephthalate (i.e., PET), transparent polyimide (i.e., CPI), cyclic olefin polymer (i.e., COP), super retarder film (i.e., SRF), polycarbonate (i.e., PC), and polyethylene naphthalate (i.e., PEN).
According to the method for curing the negative photoresist layer, disclosed by the application, when the negative photoresist layer is cured on the substrate, the adhesive force of the negative photoresist layer can be obviously improved, and the quality and the yield of a final display product are improved.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
The accompanying drawings are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate the application and together with the embodiments of the application, and do not limit the application. In the drawings:
FIG. 1 is a flow chart of a method for curing a negative photoresist layer according to the present application.
Detailed Description
Embodiments of the present application will be described in more detail below with reference to the accompanying drawings. While the application is susceptible of embodiment in the drawings, it is to be understood that the application may be embodied in various forms and should not be construed as limited to the embodiments set forth herein, but rather are provided to provide a more thorough and complete understanding of the application. It should be understood that the drawings and embodiments of the application are for illustration purposes only and are not intended to limit the scope of the present application.
It should be understood that the various steps recited in the method embodiments of the present application may be performed in a different order and/or performed in parallel. Furthermore, method embodiments may include additional steps and/or omit performing the illustrated steps. The scope of the application is not limited in this respect.
The term "including" and variations thereof as used herein are intended to be open-ended, i.e., including, but not limited to. The term "based on" is based at least in part on. The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments. Related definitions of other terms will be given in the description below.
It should be noted that references to "one", "a plurality" and "a plurality" in this disclosure are intended to be illustrative rather than limiting, and those skilled in the art will appreciate that "one or more" is intended to be construed as "one or more" unless the context clearly indicates otherwise. "plurality" is understood to mean two or more.
Hereinafter, embodiments of the present application will be described in detail with reference to the accompanying drawings.
Example 1
In one embodiment of the present application, a method for curing a negative photoresist layer is provided to improve the adhesion of the negative photoresist layer.
Fig. 1 is a flow chart of a curing method of a negative photoresist layer according to the present application, and the curing method of a negative photoresist layer according to the present application will be described in detail with reference to fig. 1 below:
a method of curing a negative photoresist layer, comprising:
s101: providing a substrate of a negative layer to be solidified, and cleaning the substrate until the substrate is clean;
specifically, the shower head is used for cleaning the substrate under the action of the water pump so as to remove dirt on the surface of the substrate until the substrate is clean.
In this embodiment, the substrate is an optical base material, and is generally made of at least one of polyethylene terephthalate (i.e., PET), transparent polyimide (i.e., CPI), cyclic olefin polymer (i.e., COP), super retardation film (i.e., SRF), polycarbonate (i.e., PC), and polyethylene naphthalate (i.e., PEN).
S102: uniformly coating negative photoresist on the substrate to form a negative photoresist layer;
in this embodiment, the negative photoresist is uniformly coated on the substrate by the coater to form a negative photoresist layer.
In other embodiments, other means of uniformly coating the negative photoresist on the substrate may be used.
S103: pre-baking the substrate and the negative photoresist layer;
specifically, the substrate and the negative photoresist are baked at a baking temperature of 80-85 ℃ for 50-60 s.
S104: exposing the negative photoresist layer through a mask plate by using UV light;
the "exposure" refers to a step of exposing the substrate coated with the negative photoresist layer to light (particularly ultraviolet light, i.e., UV light), and partially shielding the light by a mask plate during exposure, so that the structural properties of the negative photoresist layer exposed to UV light are changed after the negative photoresist layer reacts with the light.
The mask plate is divided into a light-transmitting region and a non-light-transmitting region, wherein the light-transmitting region is a region allowing UV light to pass through.
Since the negative photoresist material of the negative photoresist layer is an organic solution containing a compound having photosensitive properties and a cyclized rubber-like resin, and is subjected to a bridging reaction after being irradiated with light, and is formed to have insoluble properties after being overlapped and cured by a developer, the solubility difference between an exposed portion and a non-exposed portion formed after exposure to light is utilized, and the pattern corresponding to the light transmitting region of the mask plate is generated at the portion of the negative photoresist layer exposed to UV light by utilizing the solubility difference.
Specifically, the wavelength is 365-405 nm and the exposure energy is 80-500 mj/cm 2 The negative photoresist layer is exposed through a mask plate.
S105: developing the negative photoresist layer by using an alkaline developing solution to form a pattern corresponding to the light-transmitting region of the mask plate on the negative photoresist layer;
the "development" refers to a step of dissolving and washing out the unexposed portion of the negative photoresist layer, which is blocked by the mask, by a developer, because the developer used in development is usually an aqueous solution containing an alkaline compound and a surfactant, the developer is usually referred to as an alkaline developer, wherein the alkaline compound may be an inorganic or organic alkaline compound, and these inorganic and organic alkaline compounds may be used singly or in combination of two or more kinds; as the surfactant, at least one selected from the group consisting of nonionic surfactants, anionic surfactants, and cationic surfactants may be used, and these surfactants may be used alone or in combination of two or more.
S106: using 1200-1300mj/cm 2 Irradiating the substrate with energy UV light for 60-70 seconds at 35-40deg.C;
specifically, 1200-phase resist layer is used for the substrate after development1300mj/cm 2 The energy UV irradiates the substrate for 60-70 seconds, and the irradiation temperature is 35-40 ℃.
S107: and carrying out high-temperature curing on the negative photoresist layer.
Specifically, the substrate and the negative photoresist layer are baked for 15min to 1h at the temperature of 170 ℃ to 250 ℃ so as to enhance the adhesiveness of the negative photoresist layer and release the stress of the negative photoresist layer.
The negative photoresist layer after high temperature curing is subjected to an adhesion hundred-cell test, and the adhesion is more than or equal to 4B, and is obviously improved compared with the prior art.
Example 2
In one embodiment of the present application, a method for curing a negative photoresist layer is provided to improve the adhesion of the negative photoresist layer.
Example 2 of the present application differs from example 1 in that:
and after the substrate is cleaned, drying the substrate.
Before pre-baking the substrate and the negative photoresist layer, placing the substrate in a vacuum drying cavity, and performing low-pressure drying treatment on the negative photoresist layer.
And cleaning the developing solution remained on the substrate and the negative photoresist layer by using deionized water, and drying the cleaned substrate and the cleaned negative photoresist layer.
The above description is only illustrative of some of the embodiments of the present application and of the principles of the technology employed. It will be appreciated by persons skilled in the art that the scope of the disclosure referred to in the present application is not limited to the specific combinations of technical features described above, but also covers other technical features formed by any combination of the technical features described above or their equivalents without departing from the spirit of the disclosure. Such as the above-mentioned features and the technical features disclosed in the present application (but not limited to) having similar functions are replaced with each other.
Moreover, although operations are depicted in a particular order, this should not be understood as requiring that such operations be performed in the particular order shown or in sequential order. In certain circumstances, multitasking and parallel processing may be advantageous. Likewise, while several specific implementation details are included in the above discussion, these should not be construed as limiting the scope of the application. Certain features that are described in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any suitable subcombination.
Although the subject matter has been described in language specific to structural features and/or methodological acts, it is to be understood that the subject matter defined in the appended claims is not necessarily limited to the specific features or acts described above. Rather, the specific features and acts described above are example forms of implementing the claims.

Claims (9)

1. A method of curing a negative photoresist layer, comprising:
providing a substrate of a negative layer to be solidified, and cleaning the substrate until the substrate is clean;
uniformly coating negative photoresist on the substrate to form a negative photoresist layer;
pre-baking the substrate and the negative photoresist layer;
exposing the negative photoresist layer through a mask plate by using UV light;
developing the negative photoresist layer by using an alkaline developing solution to form a pattern corresponding to the light-transmitting region of the mask plate on the negative photoresist layer;
irradiating the substrate with UV light with energy of 1200-1300mj/cm2 for 60-70 seconds at 35-40deg.C;
and carrying out high-temperature curing on the negative photoresist layer.
2. The method of curing a negative photoresist layer according to claim 1, further comprising:
before pre-baking the substrate and the negative photoresist layer, placing the substrate in a vacuum drying cavity, and performing low-pressure drying treatment on the negative photoresist layer.
3. The method of curing a negative photoresist layer according to claim 1, further comprising:
and after the substrate is cleaned, drying the substrate.
4. The method of curing a negative photoresist layer according to claim 1, wherein the step of pre-baking the substrate and the negative photoresist layer comprises:
and baking the substrate and the negative photoresist at a baking temperature of 80-85 ℃ for 50-60 s.
5. The method of curing a negative photoresist layer according to claim 1, wherein the exposing the negative photoresist layer through a mask plate using UV light comprises:
the exposure energy is 80-500 mj/cm with the wavelength of 365-405 nm 2 The negative photoresist layer is exposed through a mask plate.
6. The method of curing a negative photoresist layer according to claim 1, further comprising:
and cleaning the developing solution remained on the substrate and the negative photoresist layer by using deionized water, and drying the cleaned substrate and the cleaned negative photoresist layer.
7. The method of curing a negative photoresist layer according to claim 1, wherein the step of curing the negative photoresist layer at a high temperature comprises:
and baking the substrate and the negative photoresist layer for 15 min-1 h at the temperature of 170-250 ℃.
8. The method of curing a negative photoresist layer according to claim 1, wherein the step of uniformly coating the negative photoresist on the substrate comprises:
and uniformly coating the negative photoresist on the substrate through a coating machine.
9. The method of curing a negative photoresist layer according to claim 1, wherein the substrate is made of at least one of polyethylene terephthalate (PET), transparent polyimide (CPI), cyclic Olefin Polymer (COP), super Retarder Film (SRF), polycarbonate (PC), and polyethylene naphthalate (PEN).
CN202310700087.2A 2023-06-13 2023-06-13 Curing method of negative photoresist layer Pending CN116736638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310700087.2A CN116736638A (en) 2023-06-13 2023-06-13 Curing method of negative photoresist layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310700087.2A CN116736638A (en) 2023-06-13 2023-06-13 Curing method of negative photoresist layer

Publications (1)

Publication Number Publication Date
CN116736638A true CN116736638A (en) 2023-09-12

Family

ID=87910912

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310700087.2A Pending CN116736638A (en) 2023-06-13 2023-06-13 Curing method of negative photoresist layer

Country Status (1)

Country Link
CN (1) CN116736638A (en)

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