CN117761978A - High-resolution optical coating film graphical processing technology - Google Patents
High-resolution optical coating film graphical processing technology Download PDFInfo
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- CN117761978A CN117761978A CN202410033271.0A CN202410033271A CN117761978A CN 117761978 A CN117761978 A CN 117761978A CN 202410033271 A CN202410033271 A CN 202410033271A CN 117761978 A CN117761978 A CN 117761978A
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- 239000011248 coating agent Substances 0.000 title claims abstract description 32
- 238000000576 coating method Methods 0.000 title claims abstract description 32
- 230000003287 optical effect Effects 0.000 title claims abstract description 16
- 238000012545 processing Methods 0.000 title claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 110
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000010408 film Substances 0.000 claims abstract description 30
- 239000012788 optical film Substances 0.000 claims abstract description 15
- 238000011161 development Methods 0.000 claims abstract description 13
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 33
- 239000003292 glue Substances 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 12
- 238000003384 imaging method Methods 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000003892 spreading Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000011247 coating layer Substances 0.000 abstract description 6
- 238000001259 photo etching Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention discloses a high-resolution optical coating film graphical processing technology. According to the invention, an alkaline pretreatment process is added before exposure, so that the top of the photoresist reacts with a developing solution, the bottom of the photoresist absorbs more exposure energy than the top of the photoresist during exposure, the bottom becomes easier to develop, a hard film is formed on the surface of the photoresist, and a gradient difference with gradually increased development rate from top to bottom is formed; the photoetching pattern profile after exposure and development shows a reverse-click bowl-shaped shape, so that a coating layer is prevented from coating the bottom of photoresist during optical film deposition, and photoresist removal of the coating layer is facilitated; compared with the traditional negative photoresist liftoff process, the method has higher pattern resolution, and can realize the pattern liftoff process with small line width.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a high-resolution optical coating film graphical processing technology.
Background
In the process of manufacturing a semiconductor device, a pattern on a mask is generally transferred onto a substrate by using a photolithography process, and the process is generally divided into an etching process and a liftoff process, wherein the etching process includes: providing a substrate; coating is carried out basically; forming photoresist on the coated substrate; exposing and developing the photoresist to form patterned photoresist, so that the pattern on the mask plate is transferred into the photoresist; etching the substrate by taking the patterned photoresist as a mask, so that the pattern on the photoresist is transferred into the substrate; the photoresist is removed. The Liftoff process comprises the following steps: providing a substrate; forming a photoresist on a substrate; exposing and developing the photoresist to form patterned photoresist, so that the pattern on the mask plate is transferred into the photoresist; coating the substrate by using the patterned photoresist as a mask; the photoresist is removed using a liftoff process.
Because the etching process has selectivity to the film material, only a specific metal film layer can be etched, most of non-metal film layers or metal film layers cannot be etched, and the patterned film layer in the market usually adopts a liftoff process, and negative photoresist is adopted in the market, because positive photoresist is subjected to exposure development, the pattern presents an inverted splay shape, the edge of the photoresist pattern is coated by the film layer after coating, the residual photoresist phenomenon exists at the edge of the film pattern during the photoresist stripping, and if the film thickness is thick, the coating phenomenon of the film layer is more serious, photoresist cannot be effectively removed due to the contact of photoresist stripping solution, so that the patterned film layer cannot be formed, as shown in fig. 1; the negative adhesive liftoff process principle is as follows: the negative photoresist is subjected to photochemical reaction under the irradiation of ultraviolet light, so that the photoresist is crosslinked, the exposed part is insoluble in the developing solution, the unexposed part is soluble in the developing solution during development, the photoresist at the top is strongly reacted during exposure to generate more crosslinking, the photoresist at the middle and the bottom is insoluble in the developing solution, the photoresist at the middle part and the bottom is less crosslinked due to insufficient reaction during exposure, and the photoresist is partially soluble in the developing solution, so that after development, the photoresist opening area left on the substrate is in an eight shape, as shown in fig. 2.
However, when the negative photoresist is developed, the resin component in the photoresist absorbs the developing solution, which causes the photoresist to expand, thereby affecting the resolution, and the negative photoresist contains xylene, which affects the health of operators and threatens the environmental safety. Meanwhile, negative photoresist is generally higher in viscosity, for film thickness below 300nm, the photoresist thickness needs to be more than 600nm to be degummed cleanly, the smaller the size window is, the larger the degumping difficulty is, the smaller the types of the negative photoresist which can be selected in the market are, the i-line (wavelength 365 nm) and h-line (wavelength 405 nm) negative photoresist is used for carrying out the liftoff process, and the line width is generally more than 5 um; in addition, as semiconductor device dimensions continue to shrink, the requirements for photolithographic critical dimensions (Critical Dimension, CD) are becoming smaller, thereby providing more serious challenges to photolithographic techniques.
Disclosure of Invention
In order to solve the technical problems, the invention designs a high-resolution optical coating patterning processing technology, which adopts an alkaline pretreatment technology, so that patterns after exposure and development are in a olecranon-like pattern, photoresist removal is very easy, and the line width resolution pattern processing of more than 1um can be realized by using i-line (wavelength 365 nm) and h-line (wavelength 405 nm) positive photoresist.
The invention adopts the following technical scheme:
a high-resolution optical coating film imaging processing technology comprises the following steps:
s1, gluing: coating a layer of positive photoresist on the substrate by adopting a spin coating mode;
s2, pre-baking: the substrate coated with the photoresist is subjected to glue spreading and baking by using a hot plate, and propylene glycol methyl ether acetate solvent in the glue film is removed, so that the glue film is dried, and the adhesiveness between the glue film and the substrate is increased;
s3, pretreatment: performing alkaline pretreatment on the surface of the photoresist layer;
s4, exposure: exposing the photoresist subjected to alkaline pretreatment;
s5, developing: developing the exposed photoresist to obtain a patterned photoresist pattern;
s6, post-baking: performing post-development baking treatment on the developed photoresist, evaporating all solvents in the photoresist, and filling flow pinholes in the photoresist;
s7, coating: carrying out optical film deposition coating on the photoresist patterned product to obtain an optical film deposited product;
s8, photoresist removal: and removing the coated product by a photoresist removing solution in a photoresist removing mode, only retaining the optical film directly deposited on the substrate, and completing the whole high-resolution optical coating imaging processing technology to realize the processing of the imaging optical film on the substrate.
Preferably, in step S3, the specific steps of the alkaline pretreatment are as follows: and placing the substrate in the center of an adsorption platform, dripping alkaline solvent in the center of the substrate through a rubber tube, performing alkaline treatment in a spin-coating immersion mode, and uniformly spreading the alkaline solvent on the whole substrate at a low rotating speed of 50rpm for 120 seconds.
Preferably, in step S2, the baking temperature is 100-140 ℃ and the baking time is 2-5 minutes.
Preferably, in step S4, the intensity of the exposure process is determined by the type of photoresist and the thickness of the photoresist.
Preferably, in step S6, the baking temperature is 100-120 ℃ and the baking time is 3-5 minutes.
Preferably, in step S3, the alkaline pretreatment is performed with an alkaline agent having a pH of 12 or higher.
Preferably, in step S3, the photoresist removing solution is selected from the photoresist removing solutions mainly comprising dimethyl sulfoxide.
The beneficial effects of the invention are as follows: (1) The invention adds alkaline pretreatment process before exposure to make the top of the photoresist react with the developing solution, when exposure, the bottom of the photoresist absorbs more exposure energy than the top of the photoresist, the bottom becomes easier to develop, and a layer of hard film is formed on the surface of the photoresist, so as to form gradient difference with gradually increased development rate from top to bottom; (2) The photoetching pattern profile after exposure and development shows a reverse-click bowl-shaped shape, so that the coating layer is prevented from coating the bottom of the photoresist during optical film deposition, and photoresist removal of the coating layer is facilitated; (3) Compared with the traditional negative photoresist liftoff process, the method has higher pattern resolution, and can realize the pattern liftoff process with small line width.
Drawings
FIG. 1 is a schematic diagram of a structure of a conventional positive photoresist liftoff process;
FIG. 2 is a schematic diagram of a conventional negative photoresist liftoff process;
FIG. 3 is a process flow diagram of the present invention;
Detailed Description
The technical scheme of the invention is further specifically described by the following specific embodiments with reference to the accompanying drawings:
example 1: as shown in fig. 3, a high-resolution optical coating film patterning process comprises the following steps:
s1, gluing: coating a layer of positive photoresist on the substrate by adopting a spin coating mode;
s2, pre-baking: the substrate coated with the photoresist is subjected to glue spreading and baking by using a hot plate, and propylene glycol methyl ether acetate solvent in the glue film is removed, so that the glue film is dried, and the adhesiveness between the glue film and the substrate is increased;
s3, pretreatment: performing alkaline pretreatment on the surface of the photoresist layer;
s4, exposure: exposing the photoresist subjected to alkaline pretreatment;
s5, developing: developing the exposed photoresist to obtain a patterned photoresist pattern;
s6, post-baking: performing post-development baking treatment on the developed photoresist, evaporating all solvents in the photoresist, and filling flow pinholes in the photoresist;
s7, coating: carrying out optical film deposition coating on the photoresist patterned product to obtain an optical film deposited product;
s8, photoresist removal: and removing the coated product by a photoresist removing solution in a photoresist removing mode, only retaining the optical film directly deposited on the substrate, and completing the whole high-resolution optical coating imaging processing technology to realize the processing of the imaging optical film on the substrate.
In step S3, the specific steps of the alkaline pretreatment are as follows: and placing the substrate in the center of an adsorption platform, dripping alkaline solvent in the center of the substrate through a rubber tube, performing alkaline treatment in a spin-coating immersion mode, and uniformly spreading the alkaline solvent on the whole substrate at a low rotating speed of 50rpm for 120 seconds.
In the step S2, the baking temperature is 100-140 ℃ and the baking time is 2-5 minutes. In step S4, the intensity of the exposure process is determined by the type of photoresist and the thickness of the photoresist. In the step S6, the baking temperature is 100-120 ℃, and the baking time is 3-5 minutes.
In the step S3, the alkaline pretreatment adopts an alkaline reagent with a pH value of more than 12. In step S3, the photoresist removing solution is selected from the photoresist removing solutions mainly comprising dimethyl sulfoxide.
According to the invention, an alkaline pretreatment process is added before exposure, so that the top of the photoresist reacts with a developing solution, the bottom of the photoresist absorbs more exposure energy than the top of the photoresist during exposure, the bottom becomes easier to develop, a hard film is formed on the surface of the photoresist, and a gradient difference with gradually increased development rate from top to bottom is formed; the photoetching pattern profile after exposure and development shows a reverse-click bowl-shaped shape, so that a coating layer is prevented from coating the bottom of photoresist during optical film deposition, and photoresist removal of the coating layer is facilitated; compared with the traditional negative photoresist liftoff process, the method has higher pattern resolution, and can realize the pattern liftoff process with small line width.
The above-described embodiment is only a preferred embodiment of the present invention, and is not limited in any way, and other variations and modifications may be made without departing from the technical aspects set forth in the claims.
Claims (7)
1. The high-resolution optical coating film graphical processing technology is characterized by comprising the following steps:
s1, gluing: coating a layer of positive photoresist on the substrate by adopting a spin coating mode;
s2, pre-baking: the substrate coated with the photoresist is subjected to glue spreading and baking by using a hot plate, and propylene glycol methyl ether acetate solvent in the glue film is removed, so that the glue film is dried, and the adhesiveness between the glue film and the substrate is increased;
s3, pretreatment: performing alkaline pretreatment on the surface of the photoresist layer;
s4, exposure: exposing the photoresist subjected to alkaline pretreatment;
s5, developing: developing the exposed photoresist to obtain a patterned photoresist pattern;
s6, post-baking: performing post-development baking treatment on the developed photoresist, evaporating all solvents in the photoresist, and filling flow pinholes in the photoresist;
s7, coating: carrying out optical film deposition coating on the photoresist patterned product to obtain an optical film deposited product;
s8, photoresist removal: and removing the coated product by a photoresist removing solution in a photoresist removing mode, only retaining the optical film directly deposited on the substrate, and completing the whole high-resolution optical coating imaging processing technology to realize the processing of the imaging optical film on the substrate.
2. The patterning process for high-resolution optical coating film according to claim 1, wherein in step S3, the specific steps of the alkaline pretreatment are as follows: and placing the substrate in the center of an adsorption platform, dripping alkaline solvent in the center of the substrate through a rubber tube, performing alkaline treatment in a spin-coating immersion mode, and uniformly spreading the alkaline solvent on the whole substrate at a low rotating speed of 50rpm for 120 seconds.
3. The patterning process for high resolution optical coating according to claim 1, wherein in the step S2, the baking temperature is 100-140 ℃ and the baking time is 2-5 minutes.
4. The patterning process for high resolution optical coating according to claim 1, wherein in step S4, the intensity of the exposure process is determined by the type of photoresist and the thickness of the photoresist.
5. The patterning process for high resolution optical coating according to claim 1, wherein in step S6, the baking temperature is 100-120 ℃ and the baking time is 3-5 minutes.
6. The patterning process for high-resolution optical coating according to claim 1, wherein in the step S3, the alkaline pretreatment is performed by using an alkaline agent having a pH value of 12 or higher.
7. The process of claim 1, wherein in step S3, the photoresist removing solution is selected from the group consisting of dimethyl sulfoxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410033271.0A CN117761978A (en) | 2024-01-10 | 2024-01-10 | High-resolution optical coating film graphical processing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410033271.0A CN117761978A (en) | 2024-01-10 | 2024-01-10 | High-resolution optical coating film graphical processing technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117761978A true CN117761978A (en) | 2024-03-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410033271.0A Pending CN117761978A (en) | 2024-01-10 | 2024-01-10 | High-resolution optical coating film graphical processing technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117761978A (en) |
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2024
- 2024-01-10 CN CN202410033271.0A patent/CN117761978A/en active Pending
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