CN1670970A - Photoelectric semiconductor component - Google Patents
Photoelectric semiconductor component Download PDFInfo
- Publication number
- CN1670970A CN1670970A CNA2004100287205A CN200410028720A CN1670970A CN 1670970 A CN1670970 A CN 1670970A CN A2004100287205 A CNA2004100287205 A CN A2004100287205A CN 200410028720 A CN200410028720 A CN 200410028720A CN 1670970 A CN1670970 A CN 1670970A
- Authority
- CN
- China
- Prior art keywords
- curved surface
- semiconductor component
- ring
- optoelectronic semiconductor
- type curved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Led Device Packages (AREA)
Abstract
This invention refers to a photoelectronic semiconductor device, which contains plurality of line frame, plurality of independent chip carrier fixed on line frame, plurality of semiconductor chip fixed on independent chip carrier, annular curved surface of first line frame, plurality of independent connector, second annular curved surface, wherein the chip carrier is multi-layer structure with insulated intermediate layer for insulating conduction between chip and line frame to separate the heat and electricity conduction for obtaining no electricity leakage, said invention can be series and parallel used for plurality of diodes with different driving voltage.
Description
Technical field
The present invention relates to a kind of optoelectronic semiconductor component, particularly be applied to the optoelectronic semiconductor component of light-emitting diode.
Background technology
Light-emitting diode is the widest optoelectronic semiconductor component of present purposes, and its purposes scope comprises household appliances, medical instrument, traffic sign, reaches the instrument that other need be luminous.The manufacturer of present many exploitation light-emitting diodes all at the element of making great efforts to improve light-emitting diode inside, makes this light-emitting diode possess outstanding function or illumination effect.
Optoelectronic semiconductor component shown in the Taiwan patent No. 103269, the semiconductor element that it discloses the emission of a kind of radiant type and/or receives wherein has one can launch and/or the semiconductor chip of receiver radiation is fixed on the chip carrier that lead frame forms.Wherein the inner surface of a groove is designed to a reflector, and with radiation and/or reception light, and chip carrier is conduction and the shared approach that conducts heat.In addition, semiconductor chip and at least a portion chip carrier zone by encapsulation institute around.
Seeing also Fig. 1, be the plane graph of known optoelectronic semiconductor component, also is the plane graph of above-mentioned Taiwan patent.This element comprises semiconductor chip 1; One groove 4; The outside bonding pad 11 of a plurality of protrusions, and a plurality of relative edges are protruded outside bonding pad 12.
Above-mentioned Taiwan patent has following shortcoming:
1. the formed chip carrier of its lead frame is that conduction has identical approach with heat transfer, and when chip carrier was bonded on the metal heat sink, it was dangerous to have electric leakage.
2. its connector is single, adds its chip carrier, only can provide the identical light-emitting diode of driving voltage use in parallel.
Summary of the invention
The invention provides a kind of optoelectronic semiconductor component, comprise a plurality of lead frames; A plurality of individual chips carriers, these individual chips carriers are fixed on these lead frames; A plurality of semiconductor chips are fixed on these individual chips carriers; The first lead frame ring-type curved surface, this ring-type curved surface are to be that focus is formed with the part lead frame with these chips; A plurality of separate connection parts, these separate connection parts are formed with the part lead frame; And the second ring-type curved surface, this ring-type curved surface be with this first lead frame ring-type curved surface by a packaging body around and be that focus is formed with these chips.
According to above-mentioned conception, described individual chips carrier is a sandwich construction.
According to above-mentioned conception, the upper epidermis of described individual chips carrier is a conductor, and forms circuit loop with these semiconductor chips of conducting.
According to above-mentioned conception, the intermediate layer of described individual chips carrier is an insulator, in order to isolate this semiconductor chip and these lead frames.
According to above-mentioned conception, the following top layer of described individual chips carrier can be conductor or insulator.
According to above-mentioned conception, the material of the curved surface of described first lead frame ring-type curved surface coating can enhancing reflection.
According to above-mentioned conception, the described first lead frame ring-type curved surface can be a parabolic surface or an oval calotte.
According to above-mentioned conception, described separate connection part, its part is positioned at this packaging body, and as the electrical contact of these semiconductor chips, another part is given prominence to this packaging body, in order to connect external circuit.
According to above-mentioned conception, the curved surface of the described second ring-type curved surface can be made of or be coated with the material that can strengthen reflection the material of height reflection.
According to above-mentioned conception, the described second ring-type curved surface can be a parabolic surface or an oval calotte.
According to above-mentioned conception, the curved surface of the described second ring-type curved surface is a shiny surface.
According to above-mentioned conception, described element also comprises the transparent window of a light, and this window is to be connected formed by this first ring-type curved surface with this second ring-type curved surface.
According to above-mentioned conception, described window is built-in with these semiconductor chips and these individual chips carriers.
According to above-mentioned conception, described window can cover a transparent optical element.
According to above-mentioned conception, described optical element can be a convex mirror, a level crossing or concave mirror.
The present invention has following advantage compared to existing technology:
Chip carrier of the present invention is a separate piece, and is sandwich construction, and its intermediate layer is an insulator, can isolating chip and the conductivity of lead frame, and will conduct electricity and separate, thereby when being bonded on metal heat sink on the time, not have electric leakage danger with heat transfer path.And connector of the present invention is a plurality of separate piece, can provide the light-emitting diode connection in series-parallel inequality of a plurality of driving voltages to use.
Description of drawings
Fig. 1 is the plane graph of known optoelectronic semiconductor component;
Fig. 2 is the plane graph of optoelectronic semiconductor component of the present invention; And
Fig. 3 is the profile shown in the line 3-3 of Fig. 2.
Wherein, description of reference numerals is as follows:
1 semiconductor chip, 4 grooves
6 semiconductor chips, 8 individual chips carriers
10 first lead frame ring-type curved surfaces 11 protrude outside bonding pad
12 relative edges are protruded outside bonding pad 14 separate connection parts
16 packaging bodies, 18 second ring-type curved surfaces
20 windows, 22 optical elements
Embodiment
Reach technology, means that set purpose takes and the effect that is obtained in order further to illustrate the present invention, see also following about detailed description of the present invention and accompanying drawing, purpose of the present invention, feature and characteristics, can obtain thus going deep into and specific description, yet drawings and Examples only provide reference and explanation usefulness, are not to be used for the present invention is limited.
For most preferred embodiment of the present invention is described in detail in detail, please consult Fig. 2 and Fig. 3 simultaneously, Fig. 2 is the plane graph of optoelectronic semiconductor component of the present invention, and Fig. 3 is the profile shown in the line 3-3 of Fig. 2.Optoelectronic semiconductor component of the present invention comprises a plurality of semiconductor chips 6, is fixed on the individual chips carrier; A plurality of individual chips carriers 8, these individual chips carriers are fixed on the lead frame, and these individual chips carriers are sandwich construction: wherein the upper epidermis of this individual chips carrier is a conductor, and forms circuit loop with these semiconductor chips of conducting; The intermediate layer of this individual chips carrier is the insulator (not shown), in order to isolate this semiconductor chip and these lead frames; Wherein the following top layer of this individual chips carrier can be conductor or insulator.
The first lead frame ring-type curved surface 10, this ring-type curved surface is to be that focus is formed with the part lead frame with these chips, the material of curved surface coating can the enhancing reflection of this first lead frame ring-type curved surface, wherein this first lead frame ring-type curved surface can be a parabolic surface or an oval calotte; A plurality of separate connection parts 14, these separate connection parts are formed with the part lead frame, and its part is positioned at this packaging body, and as the electrical contact of these semiconductor chips, another part is given prominence to this packaging body, in order to connect external circuit.
The second ring-type curved surface 18, this ring-type curved surface are that this first lead frame ring-type curved surface is centered on by a packaging body 16 and are that focus is formed with these chips.Wherein the curved surface of this second lead frame ring-type curved surface can be made of the material of height reflection or be coated with the material that can strengthen reflection, and this second ring-type curved surface can be a parabolic surface or an oval calotte, and the curved surface of this second ring-type curved surface is a shiny surface; The transparent window 20 of one light, this window are to be connected formedly with this second ring-type curved surface by this first ring-type curved surface, and wherein this window is built-in with these semiconductor chips and these individual chips carriers; One transparent optical element 22, this optical element can cover the transparent window of this light, and wherein this optical element can be a convex mirror, a level crossing or concave mirror.
Chip carrier of the present invention is a separate piece, and is sandwich construction, and its intermediate layer is an insulator, can isolating chip and the conductivity of lead frame, and will conduct electricity and separate, thereby when being bonded on metal heat sink on the time, not have electric leakage danger with heat transfer path.
And connector of the present invention is a plurality of separate piece, can provide the light-emitting diode connection in series-parallel inequality of a plurality of driving voltages to use.
Synthetic by many curved surfaces for the reflecting surface among the present invention, curved surface can be parabolic surface or oval calotte, and is its focus with light-emitting diode chip for backlight unit, can effectively light be reflexed to frontal.
The accompanying drawing of above-mentioned announcement and explanation only are embodiments of the invention, and those skilled in the art can make other all change according to above-mentioned explanation, and these changes still belong in invention spirit of the present invention and the scope of patent protection.
Claims (15)
1. optoelectronic semiconductor component, comprising:
A plurality of lead frames;
A plurality of individual chips carriers, these individual chips carriers are fixed on these lead frames;
A plurality of semiconductor chips are fixed on these individual chips carriers;
The first lead frame ring-type curved surface, this ring-type curved surface are to be that focus is formed with the part lead frame with these chips;
A plurality of separate connection parts, these separate connection parts are formed with the part lead frame; And
The second ring-type curved surface, this ring-type curved surface are that this first lead frame ring-type curved surface is centered on by a packaging body and are that focus is formed with these chips.
2. optoelectronic semiconductor component as claimed in claim 1 is characterized in that, these individual chips carriers are sandwich construction.
3. optoelectronic semiconductor component as claimed in claim 2 is characterized in that, the upper epidermis of this individual chips carrier is a conductor, and forms circuit loop with these semiconductor chips of conducting.
4. optoelectronic semiconductor component as claimed in claim 2 is characterized in that, the intermediate layer of this individual chips carrier is an insulator, in order to isolate this semiconductor chip and these lead frames.
5. optoelectronic semiconductor component as claimed in claim 2 is characterized in that, the following top layer of this individual chips carrier can be conductor or insulator.
6. optoelectronic semiconductor component as claimed in claim 1 is characterized in that, the material of curved surface coating can the enhancing reflection of this first lead frame ring-type curved surface.
7. optoelectronic semiconductor component as claimed in claim 6 is characterized in that, this first lead frame ring-type curved surface can be a parabolic surface or an oval calotte.
8. optoelectronic semiconductor component as claimed in claim 1 is characterized in that, these separate connection parts, and its part is positioned at this packaging body, and as the electrical contact of these semiconductor chips, another part is given prominence to this packaging body, in order to connect external circuit.
9. optoelectronic semiconductor component as claimed in claim 1 is characterized in that, the curved surface of this second ring-type curved surface can be made of or be coated with the material that can strengthen reflection the material of height reflection.
10. optoelectronic semiconductor component as claimed in claim 9 is characterized in that, this second ring-type curved surface can be a parabolic surface or an oval calotte.
11. optoelectronic semiconductor component as claimed in claim 10 is characterized in that, the curved surface of this second ring-type curved surface is a shiny surface.
12. optoelectronic semiconductor component as claimed in claim 1 is characterized in that, also comprises the transparent window of a light, this window is to be connected formed by this first ring-type curved surface with this second ring-type curved surface.
13. optoelectronic semiconductor component as claimed in claim 12 is characterized in that, this window is built-in with these semiconductor chips and these individual chips carriers.
14. optoelectronic semiconductor component as claimed in claim 12 is characterized in that, this window can cover a transparent optical element.
15. optoelectronic semiconductor component as claimed in claim 14 is characterized in that, this optical element can be a convex mirror, a level crossing or concave mirror.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100287205A CN100338788C (en) | 2004-03-15 | 2004-03-15 | Photoelectric semiconductor component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100287205A CN100338788C (en) | 2004-03-15 | 2004-03-15 | Photoelectric semiconductor component |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1670970A true CN1670970A (en) | 2005-09-21 |
| CN100338788C CN100338788C (en) | 2007-09-19 |
Family
ID=35042104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100287205A Expired - Fee Related CN100338788C (en) | 2004-03-15 | 2004-03-15 | Photoelectric semiconductor component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100338788C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7843043B2 (en) | 2006-05-04 | 2010-11-30 | Everlight Electronics Co., Ltd. | Structure of a lead-frame matrix of photoelectron devices |
| CN101584053B (en) * | 2006-12-21 | 2011-01-26 | 皇家飞利浦电子股份有限公司 | Carrier and optical semiconductor device based on such a carrier |
| CN102214587A (en) * | 2010-04-08 | 2011-10-12 | 盈胜科技股份有限公司 | Method for manufacturing multi-layer array type light emitting diode |
| CN102214645A (en) * | 2010-04-08 | 2011-10-12 | 盈胜科技股份有限公司 | Multi-layer array type light emitting diode |
| WO2011123984A1 (en) * | 2010-04-08 | 2011-10-13 | 盈胜科技股份有限公司 | Multi-layer light-emitting diode array element |
| WO2011123985A1 (en) * | 2010-04-08 | 2011-10-13 | 盈胜科技股份有限公司 | Method for fabricating multilayer light emitting diode array |
| CN111063621A (en) * | 2019-12-30 | 2020-04-24 | 济南海马机械设计有限公司 | Photoelectric detector and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05251747A (en) * | 1992-03-06 | 1993-09-28 | Takiron Co Ltd | Light emitting display and its manufacture |
| JP4045781B2 (en) * | 2001-08-28 | 2008-02-13 | 松下電工株式会社 | Light emitting device |
| CN1206749C (en) * | 2002-01-21 | 2005-06-15 | 诠兴开发科技股份有限公司 | Method for package of high power LED |
-
2004
- 2004-03-15 CN CNB2004100287205A patent/CN100338788C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7843043B2 (en) | 2006-05-04 | 2010-11-30 | Everlight Electronics Co., Ltd. | Structure of a lead-frame matrix of photoelectron devices |
| CN101584053B (en) * | 2006-12-21 | 2011-01-26 | 皇家飞利浦电子股份有限公司 | Carrier and optical semiconductor device based on such a carrier |
| TWI469392B (en) * | 2006-12-21 | 2015-01-11 | Koninkl Philips Electronics Nv | Carrier and optical semiconductor device based on such a carrier |
| CN102214587A (en) * | 2010-04-08 | 2011-10-12 | 盈胜科技股份有限公司 | Method for manufacturing multi-layer array type light emitting diode |
| CN102214645A (en) * | 2010-04-08 | 2011-10-12 | 盈胜科技股份有限公司 | Multi-layer array type light emitting diode |
| WO2011123984A1 (en) * | 2010-04-08 | 2011-10-13 | 盈胜科技股份有限公司 | Multi-layer light-emitting diode array element |
| WO2011123985A1 (en) * | 2010-04-08 | 2011-10-13 | 盈胜科技股份有限公司 | Method for fabricating multilayer light emitting diode array |
| CN102214587B (en) * | 2010-04-08 | 2012-10-17 | 盈胜科技股份有限公司 | Method for manufacturing multi-layer array type light emitting diode |
| CN102214645B (en) * | 2010-04-08 | 2013-01-09 | 盈胜科技股份有限公司 | Multi-layer array type light emitting diode |
| CN111063621A (en) * | 2019-12-30 | 2020-04-24 | 济南海马机械设计有限公司 | Photoelectric detector and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100338788C (en) | 2007-09-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8349627B2 (en) | Method for fabricating a light emitting diode package structure | |
| US7872279B2 (en) | Light-emitting diode package | |
| US7875891B2 (en) | Light source device, light source module, and method of making the light source device | |
| EP2342760B1 (en) | Efficient led array | |
| US20110175512A1 (en) | Light emitting diode and light source module having same | |
| CN1960016A (en) | Light emitting diode | |
| US8569789B2 (en) | Light emitting diode package with reflective layer | |
| US20080062698A1 (en) | LED module | |
| CN100338788C (en) | Photoelectric semiconductor component | |
| US8178890B2 (en) | Light emitting diode package structure | |
| US20110175511A1 (en) | Light emitting diode and light source module having same | |
| US20100117113A1 (en) | Light emitting diode and light source module having same | |
| US20130170202A1 (en) | Led illuminating device | |
| US8692274B2 (en) | Light emitting diode package structure | |
| CA2586342A1 (en) | Led module | |
| GB2442074A (en) | Heat sinking LED package | |
| US7897991B2 (en) | Light emitting diode and LED chip thereof | |
| KR20140145410A (en) | Light emitting device | |
| US20090159913A1 (en) | Light-emitting diode | |
| CN1905220A (en) | LED packaging structure | |
| US7053414B2 (en) | Optical semiconductor component to prevent electric leakage and provide different driving voltages | |
| KR101946912B1 (en) | Lighting source module and light system having the same | |
| TWI407546B (en) | Side emitting type semiconductor package | |
| US20190378961A1 (en) | Flip-chip light-emitting module | |
| KR100621743B1 (en) | Light emitting diode package employing a heat-sinking body and method of fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: YOUDATA TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: GUANGBAO SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20130523 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20130523 Address after: Delaware Patentee after: By Tada technology limited liability company Address before: Taipei City, Taiwan, China Patentee before: Lite-On Technology Corporation |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070919 Termination date: 20160315 |