CN1651966A - Light interference displaying unit - Google Patents
Light interference displaying unit Download PDFInfo
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- CN1651966A CN1651966A CN 200410003590 CN200410003590A CN1651966A CN 1651966 A CN1651966 A CN 1651966A CN 200410003590 CN200410003590 CN 200410003590 CN 200410003590 A CN200410003590 A CN 200410003590A CN 1651966 A CN1651966 A CN 1651966A
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Abstract
The present invention relates to an optical interference type display unit. It includes at least a light incident electrode and a light reflecting electrode positioned on one transparent base, and the light incident electrode at least includes a transparent conductive layer and a dielectric layer, and the light reflecting electrode at least includes a light-receiving layer and a light-reflecting layer.
Description
Technical field
The relevant a kind of light interference type display panel of the present invention, and the color-variable pixel unit of relevant a kind of light interference type display panel particularly.
Background technology
Flat-panel screens is owing to have little, the lightweight characteristics of volume, at the Portable display device, and very advantageous in the monitor market of using, little space.Flat-panel screens is now removed LCD (LiquidCrystal Display, LCD), organic electric exciting light-emitting diode (Organic Electro-LuminescentDisplay, OLED) and plasma scope (Plasma Display Panel, PDP) etc. outside, a kind of plane display mode of light interference type that utilizes is suggested.
See also No. 5835255 patent of the U.S., this patent has disclosed the light interference type display unit array (Array of Modulation) of a visible light, can be used as flat-panel screens and uses.See also Fig. 1, Fig. 1 is the diagrammatic cross-section that illustrates known light interference type display unit.Each light interference type display unit 100 comprises that light incident electrode 102 and light reflecting electrode 104 are formed on the transparent substrates 105, and 104 of light incident electrode 102 and light reflecting electrodes are supported by stilt 106 and form a chamber (Cavity) 108.The distance that light incident electrode 102 and light reflecting electrode are 104, just the length of chamber 108 is D.But light incident electrode 102 is the partial penetration partially reflecting layers that have an absorptivity absorption portion visible light for, 104 of light reflecting electrodes are can produce the reflection horizon of deformation for one with driven, wherein, light incident electrode 102 comprises transparency conducting layer 1021, absorption layer 1022 and dielectric layer 1023.When incident light passes light incident electrode 102 and enters in the chamber 108, in the wavelength of the visible light spectrum that incident light is all (Wave Length represents with λ), only there is the wavelength (λ 1) of coincidence formula 1.1 can produce constructive interference and exports.Wherein N is a natural number.In other words,
2D＝Nλ (1.1)
When chamber 108 length D satisfy the integral multiple of incident light half wavelength, then can produce constructive interference and export precipitous light wave.At this moment, observer's eyes are observed along the direction of incident light incident, can see that wavelength is the reflected light of λ 1, therefore, are the states that are in " opening " for light interference type display unit 100.
Fig. 2 is the diagrammatic cross-section that illustrates after known light interference type display unit adds voltage.Please refer to Fig. 2, under the driving of voltage, light reflecting electrode 104 produces deformation because of electrostatic attraction, sinks to the direction of light incident electrode 102.At this moment, the distance that light incident electrode 102 and light reflecting electrode are 104, just the length of chamber 108 is also non-vanishing, but is d, and d can equal zero.At this moment, D in the formula 1.1 will replace with d, in the wavelength X of the visible light spectrum that incident light is all, only there is the visible wavelength (λ 2) of coincidence formula 1.1 can produce constructive interference, penetrates light incident electrode 102 and export via the reflection of light reflecting electrode 104.The light that 102 pairs of wavelength of light incident electrode are λ 2 has higher light absorption, at this moment, the all visible light spectrum of incident light is all by filtering, for the observer who observes along the direction of incident light incident electrode 102, with the reflected light that can not see in any visible light spectrum, therefore, be to be in for light interference type display unit 100 state of " pass ".
Light incident electrode 102 is to be a part of penetrating component reflecting electrode.When incident light passed light incident electrode 102, the part intensity of incident light was absorbed by absorption layer 1022.Wherein, the material that forms transparency conducting layer 1021 can be the electrically conducting transparent material, for example indium oxide tin glass (ITO) or indium zinc oxide glass (IZO), and the material that forms absorption layer 1022 can be metal, for example aluminium, chromium, silver or the like.The material that forms dielectric layer 1023 can be monox, silicon nitride or metal oxide.The part of metal oxide can direct oxidation partially absorbs layer and obtains.104 of light reflecting electrodes are to be a deformable reflecting electrode, can be out of shape under the control of voltage and move up and down.Forming light reflecting electrode 104 is to adjust layer by a reflection horizon and a mechanical stress to be formed, and the material that forms the reflection horizon can be metal material/electrically conducting transparent material.Generally speaking, be applicable to the metal material that forms the reflection horizon, for example Yin stress is little, and the bigger metal of stress, therefore for example the reflectivity of chromium is not good, needs the good metal of a reflectivity to form the reflection horizon and the big metal of a stress forms mechanical stress adjustment layer and make light reflecting electrode 104 become the electrode of a movable and tool reflection function.
The characteristic of the formed display of light interference type display unit array of this visible light has low electric power power consumption, rapid answer (Response Time) and bistable state (Bi-Stable) characteristic in itself, the panel of display will be can be applicable to, particularly at Portable (Portable) product, for example mobile phone (Mobile Phone), PDA(Personal Digital Assistant), portable computer (Portable Computer) etc.
The manufacturing of existing light interference type display unit forms the indium oxide tin glass layer earlier on transparent substrates, form the metal absorption layer on the indium oxide tin glass layer, then, is forming dielectric layer in the metal absorption layer.In the processing procedure of indium tin oxide layer and dielectric layer, all can there be heteroatomss (Hetero-atom) such as a large amount of oxygen, nitrogen, therefore the production process of metal absorption layer need carry out in the another one reaction chamber, to avoid heteroatomic pollution, simultaneously, this has also increased the complexity of production process.
Summary of the invention
Existing production process production process production process
According to the above, the purpose of this invention is to provide a kind of light interference type display unit, the light absorbing zone on the light incident electrode is removed, so can in same deposition production process reaction chamber, finish the manufacturing of light incident electrode.
Another object of the present invention provides a kind of light interference type display unit, and light absorbing zone is arranged on the reflecting electrode, can avoid heteroatomic pollution, therefore has stable quality and production process yield height.
Another purpose of the present invention provides a kind of light interference type display unit, is to form reflecting electrode with light absorbing zone and reflection layer, need not extra mechanical stress and adjusts layer, so can simplify production process, reduces cost and improve the production process yield.
According to above-mentioned purpose of the present invention, a kind of manufacture method of light interference type display unit is proposed in one aspect of the present invention, form earlier a transparency conducting layer and an optical thin film layer in regular turn to form the light reflecting electrode on a transparent substrates, wherein optical thin film layer can be a dielectric layer.Be to form on the optical thin film layer sacrifice layer, in light reflecting electrode and sacrifice layer, form opening again and form stilt in it to be applicable to.Then, one first photoresist layer and fill up opening in spin coating on the sacrifice layer.Form stilt with a photoetching making operation patterning photoresist layer.Sacrifice layer can be opaque materials such as metal, can also be general dielectric material.
Above sacrifice layer and stilt, form a light absorbing zone and a reflection layer in regular turn and form a smooth reflecting electrode, last, remove sacrifice layer and form a light interference type display unit with a structure release etch production process.
According to the formed light interference type display unit of aforesaid production process, this light interference type display unit can form on the transparent substrates, at least comprise a smooth incident electrode and a smooth reflecting electrode, light incident electrode and light reflecting electrode are supported by stilt and are formed a chamber betwixt.Light incident electrode is made of transparency conducting layer and optical thin film layer, and the light reflecting electrode is formed by a light absorbing zone and a reflection layer.
When light after the incident of light incident electrode, pass transparent substrates, transparency conducting layer and optical thin film layer and directly arrive at light absorbing zone, by light absorbing zone absorption portion incident light, reduce the incident light intensity at least about 30 percent.Then, the reflection horizon by reflecting electrode reflects incident light again, and under the fixing situation of chamber length, the wavelength that coincidence formula 1.1 only arranged can penetrate the radio utmost point and appear light interference type display unit and seen by the observer.
According to disclosed light interference type display unit, the existing light absorbing zone of escape must place the arrangement mode of incident electrode, and light absorbing zone is placed the light reflecting electrode.Secondly, the structure of transparency conducting layer, light absorbing zone and the optical thin film layer of existing light incident electrode, form thickness extremely thin (less than 100 dusts) owing to form the metal material of light absorbing zone, ultrathin metallic film when manufacturing if pollution is arranged slightly, heteroatoms when for example forming transparency conducting layer and optical thin film layer, the characteristic that the thickness of light absorbing zone is evenly reached stable in properties then can cause great influence, therefore in production process, need be divided into two production process reaction chambers, and alternately form in two reaction chambers of three thin layers.Even so, two-system was not done the influence of operation before and after ultra-thin metal absorption layer did not still avoid, and slightly photoetching rings its quality.But according to light interference type display unit proposed by the invention, make transparency conducting layer and optical thin film layer in regular turn earlier, then form several microns to tens of microns sacrifice layer, generally speaking sacrifice layer can be metal material or silicon material.After forming stilt, just form light absorbing zone on sacrifice layer and stilt, form reflection layer at last again.Because sacrifice layer is enough thick, heteroatoms residual contamination light absorbing zone in the time of can avoiding forming transparency conducting layer and optical thin film layer, so thickness only has tens of dusts to the light absorbing zone of hundreds of dusts (Angstroms) can have goodish quality and uniformity coefficient, and sacrifice layer in the end can be removed, so can not have influence on light absorbing zone and reflection layer fully.
In addition, can increase the mechanical stress of light absorbing zone, the employed power or the speed of reduction film forming when for example reducing the plated metal material by adjusting the production process parameter that forms light absorbing zone.Therefore, light absorbing zone also can have the effect that existing mechanical stress is adjusted layer, and it is also inessential in the present invention that existing mechanical stress is adjusted layer.The production process parameter that forms light absorbing zone can be decided with material, thickness and light absorbing zone material, the thickness of reflection layer.
Light interference type display unit according to manufacture method manufacturing provided by the present invention has following advantage, the first, the step of production process is simplified and is avoided issuable pollution in the production process, thereby improve the light interference type display unit manufacturability and the panel characteristics of being produced more stable, quality is preferable; The second, because the light absorbing zone in the light reflecting electrode can be used as the usefulness that mechanical stress is adjusted layer, therefore existing mechanical stress adjustment layer is not in the present invention and wants.
For further specifying above-mentioned purpose of the present invention, design feature and effect, the present invention is described in detail below with reference to accompanying drawing.
Description of drawings
Fig. 1 is the diagrammatic cross-section that illustrates existing light interference type display unit;
Fig. 2 is the diagrammatic cross-section that illustrates after existing light interference type display unit adds voltage; And
Fig. 3 A to Fig. 3 C is a kind of light interference type display unit manufacture method that illustrates according to preferred embodiment of the present invention.
Embodiment
For allow light interference type display unit provided by the present invention clear more for the purpose of, manufacture method and structure to disclosed light interference type display unit in preferred embodiment are described in detail.
Please refer to Fig. 3 A to Fig. 3 C, Fig. 3 A to Fig. 3 C is the manufacture method that illustrates according to a kind of light interference type display unit of preferred embodiment of the present invention.Please refer to Fig. 3 A, on a transparent substrates 300, form a transparency conducting layer 302 earlier, form transparency conducting layer 302 material can for, for example tin indium oxide (ITO), indium zinc oxide (IZO), zinc paste (ZO), indium oxide (IO) or aforementioned material select more than one to use with.The thickness of transparency conducting layer 302 is decided on demand, generally is about tens of dusts to thousands of dusts and does not wait.
After forming transparency conducting layer 302, form at least one optical thin film layer 304 again on transparency conducting layer 302.The material that forms optical thin film layer 304 is to be a dielectric material, can be monox, silicon nitride or metal oxide etc.Transparency conducting layer 302 and optical thin film layer 304 constitute light incident electrode 306.Then, form a sacrifice layer 308 on optical thin film layer 304, the material that forms sacrifice layer 308 can be metal or silicon material, for example molybdenum, magnesium metal, molybdenum alloy, magnesium alloy, monocrystalline silicon, polysilicon and amorphous silicon etc., the thickness of sacrifice layer 308 from several microns extremely tens of microns, is decided on the catoptrical wavelength of this light interference type display unit approximately.
Form opening 310 with a photoetching preface in light incident electrode 306 and sacrifice layer 308, opening 310 is to be applicable to form stilt in it.
Then, form a material layers 312 and fill up opening 310 at sacrifice layer 308.Material layers 312 is to be applicable to the usefulness that forms stilt, generally can usability finish matter, and for example photoresistance, or the polymerizable material of non-sensitization, for example polyester or polyamides or the like.If use non-sensitization material to form material layers, then need a photoetching preface on material layers 312, to form stilt.Be to form material layers 312 in the present embodiment, please refer to Fig. 3 B, only need with a photoetching making operation patterning material layers 312 with the sensitization material.Form stilt 314 via the material layers 312 shown in photoetching making operation patterning Fig. 3 A.
Then, above sacrifice layer 308 and stilt 314, form the usefulness of a metal level 316 earlier, be applicable to that the metal that forms metal level 316 can be chromium, molybdenum, chrome molybdenum, evanohm and molybdenum alloy etc. as light absorbing zone.The thickness of metal level 316 is about tens of dust to 200 dusts.Then, forming reflection layer 318 on metal level 316, the material that generally speaking forms reflection layer 318 is a metal material, for example silver, aluminium, silver alloy or aluminium alloy etc.Metal level 316 and reflection layer 318 constitute light reflecting electrode 320.
Please refer to Fig. 3 C, remove the sacrifice layer 308 shown in Fig. 3 B and form chamber 322 (position of sacrifice layer 308) with structure release etch (Release Etch Process).The formed light interference type display unit 324 of production process as the aforementioned, light interference type display unit 324 is positioned on the transparent substrates 300, at least comprise a smooth incident electrode 306 and a smooth reflecting electrode 320, light incident electrode 306 and light reflecting electrode 320 are supported by stilt 314 and are formed a chamber 322 betwixt.Light incident electrode 306 is made of transparency conducting layer 302 and optical thin film layer 304, and light reflecting electrode 320 is formed by a metal (light absorption) layer 316 and one reflection layer 318.
In addition, if need to strengthen the stress structure of light reflecting electrode 320, can on reflection layer 318, form mechanical stress adjustment layer (not being illustrated on the figure), to adjust the stress of light reflecting electrode 320.
The present invention removes the former light absorbing zone that is positioned at light incident electrode, and it is arranged at the light reflecting electrode.Can simplify the step of production process and can avoid in the production process pollution that may produce light absorbing zone and have influence on the quality of light absorbing zone by structural like this design, and then improve the light interference type display unit manufacturability and the panel characteristics of being produced more stable, quality is preferable.Secondly, adjust layer, therefore can not use mechanical stress to adjust layer, and lack production process one, can improve production capacity and reduce manufacturing cost because the light absorbing zone in the light reflecting electrode can be used as mechanical stress.
Though the present invention describes with reference to current specific embodiment, but those of ordinary skill in the art will be appreciated that, above embodiment is used for illustrating the present invention, under the situation that does not break away from spirit of the present invention, also can make the variation and the modification of various equivalences, therefore, as long as how to change in connotation scope of the present invention, modification all will be dropped in the scope of claims of the present invention.
Claims (10)
1. light interference type display unit comprises at least:
One incident electrode, this incident electrode comprises:
One transparency conducting layer; And
One is positioned at the optical thin film layer on this transparency conducting layer;
One reflecting electrode, this reflecting electrode comprises:
One light absorbing zone; And
One is positioned at the reflection layer on this light absorbing zone; And
At least two stilts to be supporting this light incident electrode and this light reflecting electrode, and form a chamber between this light incident electrode and this light reflecting electrode.
2. light interference type display unit as claimed in claim 1 is characterized in that this light interference type display unit system is positioned on the transparent substrates.
3. light interference type display unit as claimed in claim 1, the material that it is characterized in that forming this transparency conducting layer is to be selected from one of tin indium oxide, indium zinc oxide, zinc paste, indium oxide and combination in any thereof.
4. light interference type display unit as claimed in claim 1, it is characterized in that forming this optical thin film layer is a dielectric layer.
5. light interference type display unit as claimed in claim 4 is characterized in that this dielectric layer is monox, silicon nitride or metal oxide.
6. light interference type display unit as claimed in claim 1, the material that it is characterized in that this light absorbing zone is a metal.
7. light interference type display unit as claimed in claim 6 is characterized in that this metal is to be chromium, molybdenum, chrome molybdenum, evanohm or molybdenum alloy.
8. light interference type display unit as claimed in claim 1, the material that it is characterized in that this reflection layer is a metal.
9. light interference type display unit as claimed in claim 8 is characterized in that this metal is to be silver, aluminium, silver alloy or aluminium alloy.
10. light interference type display unit as claimed in claim 1 is characterized in that this light reflecting electrode comprises that also one is positioned at the mechanical stress adjustment layer on this reflection layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410003590 CN1651966A (en) | 2004-02-03 | 2004-02-03 | Light interference displaying unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410003590 CN1651966A (en) | 2004-02-03 | 2004-02-03 | Light interference displaying unit |
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| CN1651966A true CN1651966A (en) | 2005-08-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200410003590 Pending CN1651966A (en) | 2004-02-03 | 2004-02-03 | Light interference displaying unit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105339829A (en) * | 2013-07-02 | 2016-02-17 | 浜松光子学株式会社 | Fabry-perot interference filter |
-
2004
- 2004-02-03 CN CN 200410003590 patent/CN1651966A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105339829A (en) * | 2013-07-02 | 2016-02-17 | 浜松光子学株式会社 | Fabry-perot interference filter |
| US10185140B2 (en) | 2013-07-02 | 2019-01-22 | Hamamatsu Photonics K.K. | Fabry-Perot interference filter |
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Owner name: QUALCOMM MEMS SCIENCE & TECHNOLOGY CO.,LTD. Free format text: FORMER OWNER: YUANTAI SCIENCE, TECHNOLOGY + INDUSTRY CO. LTD. Effective date: 20060428 |
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Effective date of registration: 20060428 Address after: American California Applicant after: Qualcomm MEMS Technology Corp. Address before: No. 3, No. 1, Li Gong Road, Hsinchu Science Industrial Park, Taiwan Applicant before: Yuantai Science and Technology Industry Co., Ltd. |
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