CN100346223C - Reflection type interference regulating display element and method for manufacturing same - Google Patents
Reflection type interference regulating display element and method for manufacturing same Download PDFInfo
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- CN100346223C CN100346223C CNB03158926XA CN03158926A CN100346223C CN 100346223 C CN100346223 C CN 100346223C CN B03158926X A CNB03158926X A CN B03158926XA CN 03158926 A CN03158926 A CN 03158926A CN 100346223 C CN100346223 C CN 100346223C
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Images
Abstract
The present invention provides a reflection type interference regulating display element and a manufacturing method thereof. The surface of a lower electrode of the reflection type interference regulating display element, which faces a chamber, is covered with one layer of protecting layer, and therefore, when a sacrificial layer positioned between an upper electrode and the lower electrode is etched, the protecting layer can protect the surface of the lower electrode from being damaged by etchant, so that the distance between the upper electrode and the lower electrode can not affect optical wavelength output and reflected by the element because of the change.
Description
Technical field
The present invention relates to a kind of plane display element and manufacture method thereof, particularly relate to a kind of reflective interference and regulate display element and manufacture method thereof.
Background technology
Flat-panel screens is owing to have little, the lightweight characteristic of volume, at portable display device, and very advantageous in the monitor market of using, little space.Flat-panel screens is now removed LCD (LiquidCrystal Display; LCD), organic electro-luminescent display (Organic Electro-LuminescentDisplay; OLED) and plasma flat-panel display (Plasma Display Panel; PDP) or the like outside, a kind ofly utilize the reflective interference of light to regulate the plane display mode to be suggested.
The characteristic of this formed display of being regulated by the reflective interference of light of color-variable pixel unit array has low electric power power consumption, rapid answer (Response Time) and bistable state (Bi-Stable) characteristic in itself, the panel of display will be can be applicable to, particularly in the application of portable (Portable) product, for example mobile phone (Mobile Phone), PDA(Personal Digital Assistant), portable computer (Portable Computer) or the like.
Disclosed a kind of adjustment element group (VisibleSpectrum Modulation Arrays) of visible light in the 5th, 835, No. 255 patents of the U.S., it constitutes the unit and is a kind of color-variable pixel unit, can be used as flat-panel screens and use.See also Figure 1A, Figure 1A is depicted as the cross-sectional view of the color-variable pixel unit of prior art.Each color-variable pixel unit 100 on transparency carrier 110 comprises bottom electrode 102 and top electrode 104, between bottom electrode 102 and the top electrode 104 is to be supported by stilt 106 and form a chamber (Cavity) 108.The distance that bottom electrode 102 and top electrode are 104, just the length of chamber 108 is D, the length D of chamber 108 generally can be less than 1 μ m.Bottom electrode 102 is a smooth incident electrode, has absorptivity, but the absorption portion visible light.104 of top electrodes are a smooth reflecting electrode, utilize driven can make it produce deformation.
Usually utilize the incident light source of white light as this color-variable pixel unit 100, the light that white light comprises various different wave lengths in the visible light spectrum scope (Wave Length represents with λ) is blended together.When incident light passes bottom electrode 102 and when entering in the chamber 108, only has the incident light of coincidence formula 1.1 medium wavelengths restriction to produce constructive interference and the output that is reflected in chamber 108, wherein N is a natural number.In other words,
2D＝Nλ
1 (1.1)
When the double length 2D of chamber 108 satisfies lambda1-wavelength λ
1Integral multiple the time, can make this lambda1-wavelength λ
1In this chamber 108, produce constructive interference, and export this wavelength X
1Reflected light.At this moment, observer's eyes are observed along the direction of incident light incident bottom electrode 102, can see that wavelength is λ
1Reflected light, therefore, be to be in "open" state for color-variable pixel unit 100, be a bright attitude state.
Figure 1B is depicted as the diagrammatic cross-section of color-variable pixel unit 100 after adding voltage among Figure 1A.Please refer to Figure 1B, under the driving of voltage, top electrode 104 can produce deformation because of electrostatic attraction, sinks to the direction of bottom electrode 102.
At this moment, the distance that bottom electrode 102 and top electrode are 104, just the length of chamber 108 is d, this d can equal zero.That is to say that the D in the formula 1.1 will replace with d, in the wavelength of all light, the wavelength (λ of coincidence formula 1.1 is only arranged in the incident light
2) can in chamber 108, produce constructive interference, penetrate bottom electrode 102 and export via the reflection of top electrode 104.In this color-variable pixel unit 100, it is λ that bottom electrode 102 is designed to wavelength
2Light have higher absorptivity, so all light in the incident light are all by filtering, the observer for observing along the direction of incident light incident bottom electrode 102 will can not see that any light is reflected out.Therefore, be to be in "off" state for color-variable pixel unit 100 this moment, is a dark attitude state.
As mentioned above, under the driving of voltage, top electrode 104 can produce deformation because of electrostatic attraction, sinks to the direction of bottom electrode 102, makes this color-variable pixel unit 100 switch to "off" state by "open" state.And when color-variable pixel unit 100 will switch to "open" state by "off" state, then must remove earlier in order to drive the voltage of top electrode 104 deformation.Then, itself the deformation restoring force of paddling one's own canoe, the top electrode 104 that loses the electrostatic attraction effect can revert to the original state as Figure 1A, makes this color-variable pixel unit 100 present a "open" state.
From the above, this color-variable pixel unit 100 combines optical thin film principle of interference, reflecting plate processing procedure and MEMS (micro electro mechanical system) framework processing procedure and integrates and form.The optical thin film of the last layer of bottom electrode 102, its material are generally the normal insulating material that uses in the manufacture of semiconductor, as monox or silicon nitride.And in the MEMS (micro electro mechanical system) framework, chamber 108 forms via the sacrifice layer of etching between top electrode 104 and bottom electrode 102.The material of sacrifice layer mostly is metal, polysilicon or amorphous silicon, and especially siliceous material is low because of its cost, comparatively comes into one's own in the processing procedure exploitation.But as if etchant selected when the etch sacrificial layer, when its etching selectivity for sacrifice layer and optical thin film is not good, usually in the process of etch sacrificial layer, also damage is caused on the surface of bottom electrode 102, make the width D of chamber 108 change and the optical thin film character of bottom electrode impaired, but just make the input optical wavelength λ of variable color pixel cell 100
1Change, thereby influence the color uniformity coefficient of display.
Summary of the invention
The purpose of this invention is to provide a kind of reflective interference and regulate display element and manufacture method thereof; regulate in reflective interference on the optical thin film of bottom electrode of display element and form layer protective layer, regulate the optical thin film of display element bottom electrode to protect reflective interference.
Another object of the present invention provides a kind of reflective interference and regulates display element and manufacture method thereof; regulate in reflective interference on the optical thin film of bottom electrode of display element and form layer protective layer, make reflective interference regulate the optical thin film steady quality of the bottom electrode of display element.
Another purpose of the present invention provides a kind of reflective interference and regulates display element and manufacture method thereof, in order to improve display quality and the fiduciary level thereof that display panel is regulated in reflective interference.
In order to realize above-mentioned purpose of the present invention; the present invention proposes the manufacture method that display element is regulated in a kind of reflective interference, and this manufacture method comprises the following step at least: preface forms first transparency conducting layer, light absorbing zone, insulation course, protective seam and sacrifice layer successively on transparency carrier.Among sacrifice layer, protective seam, insulation course, light absorbing zone and first transparency conducting layer, form first opening of at least two road vertical bar shapes then; define bottom electrode, wherein bottom electrode is to be formed by first transparency conducting layer, light absorbing zone, insulation course and protective seam institute storehouse.Then, coating one deck photosensitive material on transparency carrier allows it fill up the first above-mentioned opening and covers on the sacrifice layer, and this photosensitive material of patterning again is so that it forms stilt in first opening.On sacrifice layer and stilt, form second conductive layer then, again in wherein forming second opening of twice vertical bar shape at least, to define at least one top electrode, wherein second conductive layer of this top electrode after by definition formed, and the bearing of trend of the bearing of trend of the second above-mentioned opening and above-mentioned first opening is orthogonal.Then, remove above-mentioned sacrifice layer, wherein above-mentioned protective seam protection insulation course is injury-free when removing.
In order to realize above-mentioned purpose of the present invention, propose a kind of reflective interference and regulate display element, this display element comprises bottom electrode, top electrode, stilt and protective seam at least.Above-mentioned top electrode and bottom electrode are arranged in parallel, the chamber that stilt then can supply incident light to interfere with formation between bottom electrode and top electrode, and protective seam then covers bottom electrode on the surface of chamber.When the sacrifice layer of etching between bottom electrode and top electrode, the damage of employed etchant when above-mentioned protective layer used surface with the protection bottom electrode is not subjected to the etch sacrificial layer.
According to a preferred embodiment of the present invention, the material of above-mentioned protective seam is preferably not siliceous material, for example can be metal oxide.Available metal oxide for example has aluminium oxide, titanium dioxide or tantalum oxide.
The present invention can not corroded bottom electrode by used etchant at the surface coverage last layer protective seam of bottom electrode when removing sacrifice layer.Therefore, can make the optical thin film of bottom electrode keep structural integrity, make its stable in properties, show so that high-quality image to be provided.
Description of drawings
Below in conjunction with accompanying drawing,, will make technical scheme of the present invention and other beneficial effects apparent by the specific embodiment of the present invention is described in detail.
In the accompanying drawing,
Figure 1A is depicted as the cross-sectional view of the color-variable pixel unit of prior art.
Figure 1B is depicted as the diagrammatic cross-section of color-variable pixel unit 100 after adding voltage among Figure 1A.
Fig. 2 A-2D is depicted as the manufacturing process sectional view of regulating display element according to a kind of reflective interference of a preferred embodiment of the present invention.
Embodiment
Regulate in the manufacture process of display element in reflective interference, when removing sacrifice layer in the prior art, also the optical thin film of bottom electrode is caused the problem of damage, the invention provides a kind of reflective interference and regulate display element and manufacture method thereof in order to solve.In preferred embodiment of the present invention,, bottom electrode can not corroded when removing sacrifice layer by used etchant at the surface coverage last layer protective seam of bottom electrode.Therefore, can make the optical thin film of bottom electrode keep structural integrity, make its stable in properties, show so that high-quality image to be provided.
Please refer to Fig. 2 A-2D, it is depicted as the manufacturing process sectional view of regulating display element according to a kind of reflective interference of a preferred embodiment of the present invention.In Fig. 2 A, on transparency carrier 200, form first transparency conducting layer 205, light absorbing zone 210, insulation course 215, protective seam 220 and sacrifice layer 225 in regular turn.
The material of the first above-mentioned transparency conducting layer 205 for example can be tin indium oxide (Indium Tin Oxide; ITO), indium zinc oxide (Indium Zinc Oxide; IZO), zinc paste or indium oxide, the material of light absorbing zone 210 for example can be metal, as aluminium, silver or chromium or the like.The material of insulation course 215 for example can be monox or silicon nitride, and the material of sacrifice layer 225 for example can be amorphous silicon or polysilicon, and then the material of protective seam 220 is preferably not siliceous material, for example metal oxide.Available metal oxide for example has dielectric materials such as aluminium oxide, titanium dioxide or tantalum oxide.
In Fig. 2 B, in sacrifice layer 225, protective seam 220, insulation course 215, light absorbing zone 210 and first transparency conducting layer 205, form first opening 230 of at least two road vertical bar shapes, define the bottom electrode position, promptly between twice first opening 230.Then, coating one deck photosensitive material 235 on the sacrifice layer 225 with first opening 230 among.The trend of the first above-mentioned opening 230 is vertical paper, and its formation method for example can be the lithography method.Bottom electrode is then formed with 220 storehouses of protective seam by first transparency conducting layer 205 after the definition, light absorbing zone 210, insulation course 215.Wherein above-mentioned photosensitive material 235 for example can be positive photoresistance, negative photoresistance or various photopolymer, as polyimide (polyimide), acryl resin or epoxy resin.
In Fig. 2 C, utilize the method for exposure imaging, the photosensitive material of making way in first opening 230 235 carries out chemical reaction to form stilt 240 in first opening 230.On sacrifice layer 225 and stilt 240, form second conductive layer 250 then, in second conductive layer 250, form twice vertical bar shape second opening (not shown) at least then, to define at least one top electrode, promptly between twice second opening.The formation method of the second above-mentioned opening for example can be the lithography method, and the bearing of trend of its bearing of trend and above-mentioned first opening is orthogonal, that is is parallel to paper.Top electrode is generally the reflecting electrode that can move up and down by deformation, and it is made up of second conductive layer 250.The material of the second above-mentioned conductive layer 250 can be metal, must reflect the light of self-induced transparency substrate 200 below incidents.
In Fig. 2 D, utilize structure to discharge processing procedure (release etching process) and remove sacrifice layer 225, finish the manufacturing that display element is regulated in reflective interference.Said structure discharge processing procedure can with the method that removes for example can be the remote plasma etching method.The precursor of employed etch plasma is to contain fluorine-based or the etchant of chloro in the remote plasma etching method, as xenon difluoride, carbon tetrafluoride, boron chloride, Nitrogen trifluoride, sulfur hexafluoride or its combination in any.
By the invention described above preferred embodiment as can be known, the present invention is at the not siliceous protective seam of the surface coverage last layer of bottom electrode, to separate siliceous insulation course and sacrifice layer.Therefore, the etching selectivity between sacrifice layer and the protective seam can be much larger than the sacrifice layer of prior art and the etching selectivity between the insulation course.So when removing sacrifice layer, the surface of bottom electrode just can not corroded by used etchant.So can make the optical thin film of bottom electrode keep structural integrity, make its stable in properties, so that being provided, high-quality image shows.
The above; for the person of ordinary skill of the art; can make other various corresponding changes and distortion according to technical scheme of the present invention and technical conceive, and all these changes and distortion all should belong to the protection domain of accompanying Claim of the present invention.
Claims (11)
1, a kind of manufacture method of reflective interference adjusting display element is characterized in that this manufacture method comprises at least:
Form one first electrode layer on a transparency carrier, wherein this first electrode comprises one and is formed at first transparency conducting layer, on the described transparency carrier and is formed at light absorbing zone and on described first transparency conducting layer and is formed at insulation course on the described light absorbing zone;
Form a protective seam on this first electrode layer;
Form a sacrifice layer on this protective seam;
Form 2 first of vertical bar shape at least and be opened among this sacrifice layer, this protective seam, this first electrode layer, defining at least one first electrode, this first electrode layer and this protective seam institute storehouse of this first electrode after by definition forms;
Be coated with a photosensitive material on this transparency carrier, make this photosensitive material fill up those first openings and cover this sacrifice layer;
This photosensitive material of patterning is so that this photosensitive material forms stilt in those first openings;
Form a second electrode lay on this sacrifice layer and this stilt;
Form 2 second of vertical bar shape at least and be opened in this second electrode lay, defining at least one second electrode, and the bearing of trend of the bearing of trend of these second openings and these first openings is orthogonal; And
Remove this sacrifice layer, wherein this protective seam protects this insulation course injury-free when removing this sacrifice layer.
2, the manufacture method of reflective interference adjusting display element according to claim 1, wherein this insulation course comprises monox or silicon nitride.
3, the manufacture method of reflective interference adjusting display element according to claim 1, wherein the material of this protective seam comprises metal oxide.
4, the manufacture method of reflective interference adjusting display element according to claim 1, wherein the material of this protective seam comprises aluminium oxide, titanium dioxide or tantalum oxide.
5, the manufacture method of reflective interference adjusting display element according to claim 1, wherein the material of this sacrifice layer comprises polysilicon or amorphous silicon.
6, the manufacture method of reflective interference adjusting display element according to claim 1, the method that wherein removes this sacrifice layer comprises the remote plasma etching method.
7, the manufacture method of reflective interference adjusting display element according to claim 6, wherein the precursor of employed etch plasma is to contain fluorine-based or the etchant of chloro in this remote plasma etching method.
8, the manufacture method of reflective interference adjusting display element according to claim 7, wherein the precursor of employed etch plasma is selected from the group that is made up of xenon difluoride, carbon tetrafluoride, boron chloride, Nitrogen trifluoride, sulfur hexafluoride or its combination in any in this remote plasma etching method.
9, display element is regulated in a kind of reflective interference, and wherein this display element comprises at least:
One first electrode, wherein this first electrode comprises one and is formed at the light absorbing zone and that first transparency conducting layer, on the described transparency carrier is formed on described first transparency conducting layer and is formed at insulation course on the described light absorbing zone;
One second electrode is arranged in parallel with this first electrode;
Two stilts, between this first electrode and this second electrode to form a chamber; And
One protective seam covers this first electrode surface on the surface of this chamber, when the sacrifice layer of etching between this first electrode and this second electrode, and this protective layer used damage that is not subjected to employed etchant with the surface of protecting this first electrode.
10, display element is regulated in reflective interference according to claim 9, and wherein the material of this protective seam comprises metal oxide.
11, display element is regulated in reflective interference according to claim 9, and wherein the material of this protective seam comprises aluminium oxide, titanium dioxide or tantalum oxide.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB03158926XA CN100346223C (en) | 2003-09-09 | 2003-09-09 | Reflection type interference regulating display element and method for manufacturing same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB03158926XA CN100346223C (en) | 2003-09-09 | 2003-09-09 | Reflection type interference regulating display element and method for manufacturing same |
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| Publication Number | Publication Date |
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| CN1595229A CN1595229A (en) | 2005-03-16 |
| CN100346223C true CN100346223C (en) | 2007-10-31 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000040831A (en) * | 1998-07-22 | 2000-02-08 | Denso Corp | Production method of mechanical sensor of semiconductor |
| US6040937A (en) * | 1994-05-05 | 2000-03-21 | Etalon, Inc. | Interferometric modulation |
| US20020015215A1 (en) * | 1994-05-05 | 2002-02-07 | Iridigm Display Corporation, A Delaware Corporation | Interferometric modulation of radiation |
| US20030072070A1 (en) * | 1995-05-01 | 2003-04-17 | Etalon, Inc., A Ma Corporation | Visible spectrum modulator arrays |
| US6577785B1 (en) * | 2001-08-09 | 2003-06-10 | Sandia Corporation | Compound semiconductor optical waveguide switch |
-
2003
- 2003-09-09 CN CNB03158926XA patent/CN100346223C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6040937A (en) * | 1994-05-05 | 2000-03-21 | Etalon, Inc. | Interferometric modulation |
| US20020015215A1 (en) * | 1994-05-05 | 2002-02-07 | Iridigm Display Corporation, A Delaware Corporation | Interferometric modulation of radiation |
| US20030072070A1 (en) * | 1995-05-01 | 2003-04-17 | Etalon, Inc., A Ma Corporation | Visible spectrum modulator arrays |
| JP2000040831A (en) * | 1998-07-22 | 2000-02-08 | Denso Corp | Production method of mechanical sensor of semiconductor |
| US6577785B1 (en) * | 2001-08-09 | 2003-06-10 | Sandia Corporation | Compound semiconductor optical waveguide switch |
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| CN1595229A (en) | 2005-03-16 |
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