CN1646932A - Method and arrangement for protecting a chip and checking its authenticity - Google Patents
Method and arrangement for protecting a chip and checking its authenticity Download PDFInfo
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- CN1646932A CN1646932A CNA038077604A CN03807760A CN1646932A CN 1646932 A CN1646932 A CN 1646932A CN A038077604 A CNA038077604 A CN A038077604A CN 03807760 A CN03807760 A CN 03807760A CN 1646932 A CN1646932 A CN 1646932A
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- semiconductor devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/073—Special arrangements for circuits, e.g. for protecting identification code in memory
- G06K19/07309—Means for preventing undesired reading or writing from or onto record carriers
- G06K19/07372—Means for preventing undesired reading or writing from or onto record carriers by detecting tampering with the circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/57—Protection from inspection, reverse engineering or tampering
- H01L23/576—Protection from inspection, reverse engineering or tampering using active circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/922—Active solid-state devices, e.g. transistors, solid-state diodes with means to prevent inspection of or tampering with an integrated circuit, e.g. "smart card", anti-tamper
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- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Computer Security & Cryptography (AREA)
- Power Engineering (AREA)
- Measuring Magnetic Variables (AREA)
- Inspection Of Paper Currency And Valuable Securities (AREA)
- Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
- Structure Of Printed Boards (AREA)
- Credit Cards Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
- Burglar Alarm Systems (AREA)
- Road Signs Or Road Markings (AREA)
Abstract
The semiconductor device has a security coating with embedded magnetic particles and magnetoresistive sensors. This renders possible a measurement of the impedance of security elements defined by magnetoresistive sensors and security coating. If initial values of the impedance arc stored, actual values can be compared therewith to see if the device has not been electrically probed or modified. Such a comparison can be used to check the authenticity of the device.
Description
The present invention relates to a kind of semiconductor devices, it has circuit, cover circuit safe floor, comprise the safety element and the sensor of the regional area of safe floor.
The invention still further relates to a kind of carrier with semiconductor devices and card reader.
The invention further relates to the method for a kind of initial method and a kind of checking semiconductor device authenticity.
By EP-A 300864 known this semiconductor devices and this carriers.The safety element of known device is a capacitor, and two electrode for capacitors that have as its sensor capacitively are coupled to together by safe floor.Device preferably comprises a plurality of safety elements.When the authenticity of check device, the voltage of measuring is compared with the reference voltage that calculates.If there are differences, then do not approve its authenticity.It is smart card that there is carrier thereon in device.
A shortcoming of known device is that safety element can be got around.Can make lower circuit other structure replacement safety element arbitrarily by having same capacitance.And, if applying electrode and safety element more afterwards then can not detect removing of safe floor and electrode.For check, electronics is detected and/or revise circuit, can carry out this removing.
Therefore first purpose of invention provides a kind of semiconductor devices of putting down in writing in opening paragraph, can check removing of its safe floor afterwards.
Second purpose of invention provides a kind of carrier with improved plagiarization check (detectionof hacking).
First purpose realizes being:
-safe floor comprise embedding magnetic particle and
-sensor is a magnetic sensor, can measure the magnetic property of safe floor.
Second purpose realizes being that carrier comprises semiconductor devices of the present invention.
Two features of the present invention--sensor of the magnetic particle of embedding and its magnetic property of measurement--are in conjunction with the protection system that forms extraordinary any semiconductor devices.Its essence is that further the magnetic particle of sensor and embedding all realizes on chip; This also means and does not change mutual position.Therefore, any uncertainty during magnetic property is measured all reduces significantly.And, for Any user or hacker, can hide this measurement fully.If the value of magnetic property be stored in chip originally on one's body, then do not need to carry out to external world any communication.In addition, any magnetic property can easily be converted to the value that can use standard agreement to transmit to extraneous card reader.Possible magnetic sensor not only comprises magnetoresistive transducer, also comprises all types of inductors.For the convenience of signal Processing, preferably sensor can be converted to magnetic signal electricity or digital signal.To extend one by one now these two features will be discussed.
The application of magnetic particle has following advantage, promptly they be basically inertia with its stable performance.And after removing the original safe floor that has, it is impossible or almost impossible that the safe floor with same magnetic properties is provided.Can the test safety layer remove, this is because when initialization, with actual value be stored in storer in compare as the initial value of reference value.Storer can be present in outside the semiconductor devices.It has the following advantages, and promptly one can obtain in two positions of semiconductor devices with identical value, and and external communication, central database device does not need to check its authenticity.Selectable, storer can be present in the outside of semiconductor devices.The advantage that has like this is, can not revise storer and safe floor, but so that reference value is all different with original value with actual value equal.Preferably, there are a plurality of safety elements.
Preferably, the magnetic particle of embedding anisotropically is distributed on the circuit.The non-uniform Distribution of particle gives safety element a specific and unpredictable impedance.The non-uniform Distribution of magnetic particle can realize with number of ways in the safe floor on the circuit.If prepare safe floor, will there be the heterogeneity of distribution of particles naturally so by the particle suspension that comprises sol-gel precursors.This heterogeneity also can be strengthened by the variation of suspension parameter, for example by deliberately making unsettled suspension.Another kind of possibility is to reach by deposit according to required pattern.Its advantage that has is that suspending comprises sol-gel precursors, for example precursor of silicon dioxide, titanium dioxide, zirconia or aluminum phosphate.Heterogeneity can be chemical attribute-for example chemically different magnetic particle or the different complexs of magnetic particle-with the particle size of its physical attribute-for example different or other.
Its another advantage is, provides heterogeneity to distribute by adding non magnetic particle.The result who has like this is, the lateral attitude of magnetic particle not only on circuit, and or even mainly be that the upright position of magnetic particle changes.Be appreciated that term " vertically " and " laterally " of using in the context are with respect to the reference planes that are parallel to safe floor.
Magnetic particle can be the magnetic particle of any kind of, for example ferromagnetism, and ferrimagnetic particles.Can use ferrite particle, such as BaFe
12O
19If the attribute that precursor suspends is not compatible mutually with magnetic particle, can protect magnetic particle by encapsulation, for example at SiO
2Or in the polymkeric substance.
As known to the skilled person, magnetic particle can be based on its hardness segmentation.The parameter of this hardness is the intensity H of coercive field
cSecond parameter of describing magnetic material hardness is to participate in magnetization Mr and saturation magnetization M
SatRatio R.Remanent magnetization is defined as the magnetization when zero external magnetic field, obtains after magnetic saturation step.The soft magnetic material that is applicable to transformer and inductor has the little H of absolute sense
cValue, and R＜＜1.Has higher H
cWith the magnetic material of big R be used for magnetic recording or even as permanent magnet---also be called hard magnetic material together.Soft magnetism and hard magnetic material all can be used in the device of the present invention, but are used for different embodiment.
Among first embodiment, use the magnetic particle of soft magnetic material, its particle has the diameter of submicron order, preferably less than 100 nanometers.This particle is known as particles with superparamagnetism and ferromagnetism and ferrimagnetic particles, and it is very little, and when not having external field, its magnetization fluctuateed on short a lot of time stage than the time cycle during magnetizing measurement.Preferably, a plurality of this magnetic particles are provided in matrix inertia, micron-scale, and similarly are present in the safety coatings.This matrix with particles with superparamagnetism can buy on market, and is known as microballon (microbead).Soft magnetic material is for example magnetic iron ore or cube triple ferrites.Utilize this material, can realize short Measuring Time, preferred 0.001 to the 0.1 second order of magnitude less than 1 second.This is because short to the response time that applies magnetic field of the superparamagnetic nanoparticle made by this material.Response time is provided by the Arrhenius expression formula, and according to this formula, the response time is the index function of the product of magnetic anisotropy energy density and particle volume.
The advantage of particles with superparamagnetism is that its magnetization M fluctuates on the time stage than the time cycle much shorter between two measurements.Consequently, when measurement is initial, is parallel to safe floor and is positioned at specific magnetoresistive sensor S
xThe synthetic magnetizing field H at place
//, SxCan be assumed to zero.When having applied the external magnetic field, go out magnetization at the direction inductor that is parallel to this external magnetic field.This magnetization induces the dipole field around particle, the remarkable component that it has the magnetic field that applies perpendicular to the outside and is basically parallel to safe floor.Synthetic magnetizing field H
//, SxBe different, and can cause the resistivity change of magnetoresistive transducer.Synthetic magnetizing field H
//, SxAmplitude depend on the quantity of particle and with respect to the distance and the position of magnetoresistive transducer.
In a second embodiment, use the particle-hard-magnetic particles of hard magnetic material.Hard-magnetic particles can be any kind or size, and preferably has the mean diameter from 0.1 to 3 micrometer range.Preferred this mean diameter is more much smaller than the thickness of safe floor, and safe floor can be 10 microns or bigger thickness.
Two subclasses to hard-magnetic particles are distinguished.If the coercive field of particle is more a lot of greatly than the maximum field that can allow to put on chip at its life period, then during the manufacturing process after with their magnetization once, the direction of magnetization of each particle is fixed permanent.The measurement of the value of safety element then is included under the situation that does not apply the external magnetic field, the step of survey sensor resistance.This value is directly compared with the reference value that obtains after initialization step.
In second subclass, must apply the external magnetic field in order to cause magnetization.In this second subclass, the coercive field of particle is littler than the maximum field that can allow at the life period of chip to apply, or approximately equal.The field bigger than coercive field apply the magnetic state that has changed particle.In order to remove the influence of any uncontrolled external magnetic field that had before applied, therefore must make particle be in normal condition.The pretreated example that is fit to is demagnetization.Usually in this processing of in cathode-ray tube (CRT), using, apply alternating magnetic field.This intensity is equal to or greater than the saturation field of hard-magnetic particles at first, but reduce at each alternation place, finishing at the standard value place, and null field normally.
The value measurement that has the safety element of hard-magnetic particles in this second subclass can be identical with the particle of soft magnetic material.This will be included in zero resistance that applies survey sensor under the normal condition in magnetic field, and the direction on the plane that is basically perpendicular to safe floor applies external field, and described external field has the intensity of saturation magnetic field at least, and the step of measuring resistance once more.Measure for the second time preferably at synthetic magnetizing field H
//, SxBegin after reaching its saturation value, and before cutting off external field, stop.
Selectable, external field can be zero or intensity be lower than the saturation magnetic field of hard-magnetic particles, it has the advantage that strengthens level of security and the resistance that applies sensor of external field does not have direct influence or has the advantage of more weak direct influence.In prior to the stage of measuring, magnetic field can be further applies in the mode of demagnetization, so that finish near being lower than the described bias of saturation magnetic field.Then, measure.Special case is to measure in zero magnetic field.
Carry out be used to obtain the different measurement of normal condition before, change by the time of utilizing external field, can set up with normal condition in the clear and definite remaining state of different magnetic particle.Therefore the combined resistance rate of measuring not only depends on the size and the specific distribution of magnetic particle in the safe floor, also depends on its concrete hysteresis in response to the magnetic field relevant with the time.This has improved safe rank, based on following two reasons.At first, because when measuring complete magnetization cycle, so-called internal hysteresis loop line depends on the not concrete internal magnetization state of particle detection, and since the faint and variation at random of this inside loop line by the particle performance that can not check in the practice seriously changed, therefore in practice after the demagnetization processing, only to carry out the prediction of the remanent magnetization of particle be impossible with the basis that is measured as of volume and whole magnetic hysteresis loop.The second, the sensor response that obtains is afterwards handled in repeatedly different demagnetizations can be compared with those sensors that in initialization process, obtain responses with correlation method.This response is very special, and can think " magnetic signature ".Demagnetization is handled and can be changed on length and feature, as known to the skilled person.And, can use the full-time dependence of response.
In a further embodiment, select the potpourri of particles with superparamagnetism or this particle, so that it or they relaxation time can compare with its Measuring Time.As a result, except the absolute value of resistivity, also can use the time-dependent relation of resistivity.After a unexpected fixed magnetic field applies, by magnetoresistive transducer can measured resistivity time-dependent relation.
As above explanation can be used the various magnetic sensors that comprise magnetoresistive transducer and inductor.
In one embodiment, magnetic sensor is an inductor.Discovery only uses inductor as magnetic sensor with stable manner, can measure magnetic property well.Among this embodiment, be suitable for using ferromagnetic particle,, not exclusively use MgZn ferrite especially such as ferrite.So preferred, this ferromagnetic particle has high magnetoconductivity, for example μ 〉=1000.This causes the sensitivity that reduces for the external magnetic field, but for the high sensitivity of inductor.So preferred, the magnetic property of measurement ferromagnetic particle under upper frequency is for example in the MHz scope.Ferrite particle has them can have required magnetoconductivity and arbitrary diameter and their very stable advantages arbitrarily.
Inductor preferably is embodied in the upper strata of interconnection structure, or if present, even on any passivation layer top.It can have any suitable shape, and this depends on the kind of magnetic particle of use and the effect of measuring thus and for the free space of a sensor.Main, have at least two kinds of shapes to be used for the coil of inductor.A kind of shape is used square coil.It has the advantage that coil can be hidden in effectively in the interconnection structure, and for example coil is interrupted in a plane, but continues in the plane of lower floor and be connected with perpendicular interconnection in addition.Another kind of shape is used annular or oval winding.It has the limited space and the advantage of optimum sensitivity.Sensor can have only coil, for example has the diameter of 1-200 μ m, preferably approximately 10-20 μ m.Also can provide and have spiral winding.Second inductor can be provided in the described spirality winding with one heart.Have and it seems that most suitable further structure is so-called C-pad structure.In this structure, form the iron core of inductor by bond pad or vertical interconnection district.
In another preferred embodiment, magnetic sensor is the magnetoresistive transducer that can convert magnetic property to resistance value.Utilize magnetoresistive transducer, the magnetization that is produced by the distribution of particle is converted to resistance value.But therefore on-line measurement impedance.This has can be with the advantage of any actual value of the further processing of known plain mode, digitizing and storage impedance on the principle.In the application's context, term " impedance " is relevant with measured impedance in the magnetoresistive transducer.This impedance is actually the impedance that causes by the magnetized instantaneous variation in the safety element.This variation can provide by the amplitude that changes the external magnetic field, particularly provides by connecting and/or cutting off this external magnetic field.Usually the impedance that obtains magnetoresistive transducer poor as between the sensor voltage in normal condition and the magnetic field, this difference is divided by the sensor current that is used in the magnetoresistive transducer.Voltage is preferably the voltage of the resistance bridge (Wheatstone bridge) that is present in the sensor.
In advantageous embodiments, first safety element comprises the resistance bridge with first pair of magnetoresistive transducer and second pair of sensor, and these first and second pairs of sensors have the substantially the same resistance and the relation of magnetic signature.Described characteristic realizes with magnetic texure that by physics for example sensor has identical size and comprises identical materials, and pinning layer is pinned at direction identical in all the sensors of electric bridge.Owing to be not only impedance itself, and be measured the first couple---and optional second pair---impedance contrast between first and second magnetoresistive transducers, so the use of resistance bridge has increased the sensitivity of safety element for impedance variation.In addition, utilize resistance bridge, measure and do not rely on variation of temperature, and compensated constant background magnetic field.Resistance bridge is known with regard to itself for the technician of field of magneto-resistive sensors.In the application's context, the term resistance bridge is understood to include, and so-called Hui Sidun half-bridge comprises first pair of magnetoresistive transducer and second pair of non magnetic element that is equal to; The full electric bridge of Hui Sidun comprises first and second pairs of magnetoresistive transducers; And any variations of resistance bridge.Magnetoresistive transducer can be all kinds, such as GMR, TMR and AMR and himself be known.Except the standard magnetoresistive sensor that is described with reference to the drawings, can use more complicated sensor.Its example be have dust the layer Spin Valve, minute surface Spin Valve, have Spin Valve as the artificial antiferromagnet of pinning layer.If have passivation layer under safe floor, then magnetoresistive transducer can be positioned at the either side of this passivation layer.
In a further embodiment, safety element has this structure, and the magnetoresistive transducer that wherein will have the axes of sensitivity that is basically parallel to safe floor is shaped to striated, and it has in the length that is basically perpendicular on the direction of axes of sensitivity.The magnetoresistive transducer of this embodiment is firm being on the harmless this meaning from departing from perpendicular to the magnetic field on the direction of safe floor.If make sensor saturated, this departs from and is harmful to usually.
Preferably, passivating structure comprises a plurality of safety elements.These elements can all be the safety elements that comprises at least one magnetoresistive transducer.But, exist various types of safety elements also to be fine.The safety element of other type comprises capacitor, resistor, inductor and their combination, and wherein passivating structure comprises the layer with the variable dielectric constant that laterally strides across circuit.
Will describe in detail as following, and measured impedance in the safety element must be converted to the signal that can be stored in the storer, or be stored in semiconductor device inside or any card reader or be connected in the database of card reader.For this target, exist conversion equipment to be used for the output voltage from first safety element is converted to the actual value of first impedance.Conversion equipment can be known attribute, such as A/D converter or any based on the circuit of comparing with the predetermined clock frequency.
Carrier of the present invention can be smart card, such as the record carrier of CD, or such as the loan of bank note.
The 3rd purpose of invention provides utilizes it can check the card reader of semiconductor devices authenticity of the present invention.
The 3rd purpose realizes being being suitable for having the card reader of the card of semiconductor devices of the present invention, wherein causes the magnetized external magnetic field of magnetic particle in being basically perpendicular to safe floor in order to produce, and has the card reader magnetizing assembly.The external magnetic field that produces preferably has the intensity of 10 to the 100kA/m orders of magnitude.The example of magnetizing assembly comprises coil and permanent magnet.If the use coil, can have for example is the magnetic core of Ferrite Material.And, a plurality of coils or the magnet that can use placement parallel to each other and be electrically connected in series.The advantage of having found this structure is, produced the magnetic field in direction basically.Magnetic field in direction if desired, preferred number is two.Magnetic field in three directions if desired, preferred number is six.The card reading section of the reality of card reader preferably is present between the coil or magnet of magnetizing assembly.
Preferably, in order to measure the external magnetic field, reference sensor is present in the de card reader.Adopt described measurement, adjustable magnetic field.And card reader can comprise heating arrangement, such as infrared lamp or other local heat source, or provides fluid or gas stream under set point of temperature.Also can have thermometer.
In a further embodiment, the coil of card reader is the part of degaussing circuit.This degaussing circuit itself is known from the field of cathode ray tube.The abundant magnetization of permanent magnetism particle is provided usually, makes the magnetization of any preexist become irrelevant.The example of preferred degaussing circuit comprises two PTC thermistors and is parallel to the pass capacitor of coil to prevent to disturb.
The 4th purpose provides the method for a kind of initialization semiconductor devices of the present invention.
The 5th purpose provides a kind of method of checking semiconductor devices authenticity of the present invention.
Method with initialization semiconductor devices of the present invention realizes the 4th purpose, comprising step:
Determine safety element impedance initial actual value and
Initial actual value is stored in the storer as reference value.
Realize the 5th purpose with the method for checking semiconductor devices authenticity of the present invention, wherein device is initialised, and comprises step:
-determine the actual value of the impedance of safety element,
-from storer, read reference value,
-relatively actual value and reference value and
-have only when the difference between actual value and the reference value during less than predetermined threshold value, just approve the authenticity of semiconductor devices.
Because it is known not having the impedance actual value of safety element before initialization, the method for initializing semiconductor device is necessary thus.The method of check authenticity has actual value and reference value is an advantage available and that can compare.Actual value is available, and physically is fixed in the semiconductor devices.Reference value is available in semiconductor devices, but also can card reader visit or to be incorporated in the central database device in the card reader be available.Reference value also can be present in semiconductor devices and the central database device.Be appreciated that if there are a plurality of safety elements, can repeat this method.
Predetermined threshold is very little usually, and is for example preferred at below 5% of reference value, and is defined as the influence for uncertainty or temperature and other external conditions of correcting measuring.It should be noted that to have a plurality of safety elements under normal operation, each all has the impedance of himself.The authenticity that therefore can be expected at semiconductor devices can be by before the approval fully, and all impedances or a part at least wherein must be compared with corresponding reference value.
If reference value is stored in the storer of central database device, then check the method for authenticity also to may be interpreted as the method for discerning semiconductor devices; For example, be alternative in the reference value whether the check actual value equals to belong to the known semiconductor device identification, actual value can be used to find out the corresponding reference value in the database, and the sign of semiconductor devices therefore.Be commonly referred to unique chip identification code with the use of the reference value of central database device associating.
In a preferred embodiment, the step of determining actual value comprises the following steps:
-measurement off-state value under standard external magnetic field;
-produce the external magnetic field to cause the magnetization of magnetic particle in being basically perpendicular to safe floor;
-externally magnetic field is cut off and measures the conducting state value before;
-the actual value of determining impedance is poor between conducting state value and the off-state value.
As above explanation has only its magnetization can directly be measured by the magnetic particle of permanent fixation.For other magnetic particle, be necessary before measuring, to apply the external magnetic field.This external magnetic field preferably produces in card reader.In order to have calibrated actual value, it measures poor as between the conducting state value of the off-state value of standard, preferred zero external magnetic field and external magnetic field.
If magnetic particle or one of them part comprise hard magnetic material, then be necessary to carry out pre-service to remove magnetic particle in any existing magnetization that is basically perpendicular on the direction of safe floor.This pre-service can be that demagnetization is handled, and is as described in detail above all.
If a magnetic particle or a part at least wherein comprise soft magnetic material, can carry out relaxation and measure, comprise step:
-produce the external magnetic field to cause the magnetization of magnetic particle in being basically perpendicular to safe floor;
-with the particle relaxation of soft magnetism particle to its saturated magnetization, measure first and second values and
-impedance the actual value of determining safety element is poor between first and second values.
This relaxation measurement provides specific respone.The quantity of measured value depends on the relaxation time of soft magnetic material, himself is known.In order to correct drift effect, actual value is defined as poor between second and first value.If measure a large amount of values, can calculate poor between the value of measurement and first value, or poor between the successive value.After the measurement of first and second values, produce the external magnetic field in the opposite direction, and further measured value, can optimize measurement.
These and other aspect of semiconductor devices be will further specify with reference to the accompanying drawings and its initialization and the method for checking its authenticity made according to invention, wherein:
Fig. 1 is the schematic section of semiconductor devices;
Fig. 2 is the schematic section of the safety element in the semiconductor devices;
Fig. 3 A is the schematic plan view of safety element;
Fig. 3 B is the circuit diagram corresponding to safety element shown in Fig. 3 A;
Fig. 4 A-C shows the embodiment for the magnetic particle that utilizes superparamagnetic material, and the voltage difference of the magnetic field that applies, magnetization and measurement is as the curve map of the function of time;
Fig. 5 A-C shows the embodiment for the magnetic particle that utilizes hard magnetic material, and the voltage difference of the magnetic field that applies, magnetization and measurement is as the curve map of the function of time, and wherein measurement occurs in the saturation magnetic field;
Fig. 6 A-C shows the embodiment for the magnetic particle with hard magnetic material, and the voltage difference of the magnetic field that applies, magnetization and measurement is wherein measured in the magnetic field that occurs in less than saturation magnetic field as the curve map of the function of time; With
Fig. 7 is the schematic diagram of semiconductor devices.
Accompanying drawing is schematically to draw, and is according to true ratio, and the equal reference numbers in the different accompanying drawings refers to corresponding element.To those skilled in the art, it is conspicuous can implementing selectable and equivalent embodiment of the present invention under the situation that does not break away from real invention intention, and scope of the present invention only is defined by the claims.
Among Fig. 1, semiconductor devices 11 has silicon substrate 31, has first side 32.On this side 32, device 11 has first active component 33 and second active component 43.In this example, this active component the 33, the 43rd has emitter region 34,44, the bipolar transistor of base 35,45 and collector area 36,46.Described district 34-36,44-46 are provided in ground floor 37, and its insulation course 38 by the composition of silicon dioxide covers.Insulation course 38 is carried out composition, make it have the contact hole that is positioned at emitter region 34,44 and base 35,45.As known to the skilled person, the alternative bipolar transistor of field effect transistor perhaps also has field effect transistor except bipolar transistor.Those skilled in the art are also known, and other element such as capacitor, resistor and diode can be integrated in the semiconductor devices 11.Active component is interconnected to form circuit.
On these contact holes in insulation course 38, described district is connected to interconnection 39,40,41,42.Being interconnected on the first order and the second level in the present embodiment extended.As is generally known in the art, interconnection structure can comprise more multistage.Unshowned restraining barrier is usually located between interconnection and the active component.Interconnection 39,40,41,42 is for example made in known manner with Al or Cu, and covers and mutual insulating by dielectric layer 47, and dielectric layer 47 preferably has low-k.The restraining barrier of not shown extra existence.Exist third level interconnection 28 to connect safety element 12, comprise the regional area of first and second magnetoresistive transducers 121,122 and passivating structure 50.
Passivating structure 50 in the present embodiment comprises the Si with 0.60 μ m thickness
xN
yPassivation layer 52.The other layer that under passivation layer 52, can have phosphosilicate glass.Passivating structure also comprises the safe floor 53 of the aluminate or phosphate with 2-10 μ m thickness, wherein embeds magnetic particle.Also there is TiO in transparency for stability and safety layer 53 and reduction layer
2With the TiN particle.Unshowned planarization layer can be present in below the passivation layer 52.The potpourri of particle in single aluminate or phosphate by spin coating 15% weight, the water of 20-50% weight, and then apply safe floor 53 in about 100-150 ℃ drying.Selectable, the potpourri that can spray single aluminate or phosphate of 5-10% weight applies.After drying, at 400-500 ℃ layer annealed and to condense allowing, so the transformation from fluid to solid phase takes place.On safe floor 52, exist epoxide resin material as encapsulation 54.Can be with safe floor 53 compositions, so that make wafer easily be separated into the tube core of separation and the contact pad that qualification for example is used to be connected to PCB.
About 1 micron of sensor 121,122 phase mutual edge distances.To describe its function in detail with reference to figure 2 and 3.Sensor 121,122 can have bigger phase mutual edge distance.But, if distance then can be improved measurement less than 2 microns.This is because the magnetic particle between sensor can cause rightabout magnetization in the sensor, and causes that thus the difference of impedance changes this fact.
Fig. 2 is the detailed sectional view of safety element 12.Each of magnetoresistive transducer 121,122 all comprises the lamination of four main layers: pinning layer 61, pinning layer 62, wall 63 and free layer 64.Pinning layer 61 is antiferromagnets, is the thick Ir of 10nm in this case
20Mn
80Layer.It can be by the structure insulation of one or more cushions and lower floor, such as the Ta and/or the Ni of 3nm thickness
80Fe
20Layer.Pinning layer 62-is that the thick Co-of 6nm has the immutable magnetization owing to the influence of pinning layer 61 in this case.The pinning layer 62 of preferred magnetoresistive transducer 121,122 be magnetized to parallel direction.Therefore the output voltage of electric bridge is insensitive to uniform external magnetic field.Wall 63 comprise preferred under the GMR sensor situation such as conductive material with 3nm thickness C u.Under the TMR sensor situation, use such as Al with 1nm thickness
2O
3Insulating material.Free layer 64 comprises such as the Ni with about 6nm thickness
80Fe
20Soft magnetic material.
Fig. 2 is illustrated near the situation that has three particles with superparamagnetism in the safe floor 53 of magnetoresistive transducer 121,122, and wherein axes of sensitivity is parallel to the direction of magnetization (x axle) in the pinned magnetic 62.Particle has different size and exists with different distances and angle with respect to sensor 121,122.After the magnetic field that applies perpendicular to planar orientation,, in particle, will cause vertical magnetization according to the time-dependent relation that further specifies with reference to Fig. 4.This has caused the dipole field around the particle, as the synoptic diagram of representing by the magnetic line of force among the figure.From the dipole field of magnetic particle A, B and C the magnetization of the free layer 64 of sensor 121,122 is applied magnetic moment, this magnetic moment orientation is for being basically parallel to y direction (perpendicular to the direction on the plane of figure) when not having dipole field.Magnetic moment depends on the x between particle A, B, C and the sensor and the distance of z (perpendicular to layer plane) direction, and and the magnetization of particle A, B, C proportional.As a result, produce the magnetization rotation in the free layer 64.The direction of these magnetization rotations and size are to determine by the direction of the x component of effective (the equalization layer) in the magnetic field that is caused by magnetic particle A, B, C and size.These the amplitude at above the fold place is represented in the drawings by arrow length in the sensor plane.As a result, the net magnetization that has to the right the net magnetization rotation of (being the x forward) and have in second sensor 122 left in first sensor 121 rotates.Therefore the magnetized clean x axle component of the free layer 64 in the first sensor 121 bigger than the free layer 64 in second sensor 122.The resistance of magnetoresistive transducer 121,122 depends on the angle between the direction of magnetization of pinning layer and free layer 62,64.As a result, the resistance of sensor 121 is compared mean value and is descended, and the resistance of sensor 122 increases.
Fig. 3 a is the schematic plan view of safety element 12.Fig. 3 b shows equivalent circuit diagram.Safety element 12 is resistance bridges.Parts 123,124 can be non-magnetic resistors or the magnetoresistive transducers that equates, preferably with sensor 121,122 same types.Although preferred, parts 123,124 needn't have the physical size identical with sensor 121,122.Except that parts 121-124 and safe floor (not shown), safety element 12 comprises electrode 131-134.First electrode 131 is electric current inputs, second and third electrode 132,133 interconnect by voltage measurement.Provide conversion equipment with the output current of safety element or voltage transitions actual value to impedance.Further specify conversion equipment with reference to Fig. 7 below.The 4th electrode 134 is electric current output.Observe, the shape of the resistance bridge shown in Fig. 3 a is not vital for present embodiment.This is because the randomness that magnetic particle distributes.
Fig. 4,5 and 6 illustrates the curve map for the voltage difference that applies magnetic field, magnetization and measurement of three embodiment of invention.Fig. 4 relates to the embodiment with particles with superparamagnetism.Fig. 5 and 6 relates to the embodiment that limited the hard-magnetic particles of its normal condition before measuring.Fig. 5 is illustrated in the measurement of saturation magnetic field, and Fig. 6 is illustrated in the measurement less than the degaussing field of saturation magnetic field.
When using particles with superparamagnetism, before applying the external magnetic field, being magnetized to of particle is zero.Therefore can carry out the off-state of the output voltage of resistance bridge immediately measures.At t
R, BBegin to measure and at t
R, EFinish to measure.Then at t
0Apply external magnetic field H
AppThis is passing through will to cause the magnetization M of particle to increase to its saturation value M on the time scale of being determined by the relaxation time or the relaxation time distribution of particle
SatAs long as therefore there is magnetic field H
App, it is stable that the magnetization just keeps, and can carry out the measurement of voltage difference delta V.Its conducting state is measured will be at t
BThe beginning and at t
EFinish.At last at t
1, external magnetic field H
AppTo drop to and end, and magnetization M and voltage difference delta V will be reduced to its reference value.Determine that actual value is that conducting state is measured and off-state poor between measuring.Selectable, the measurement of voltage difference can be used as the function of time and carries out.If the relaxation time is time t
1Exponent number (order) be very noticeable.
When use its coercive field less than or be same as the maximum that allowed not during the hard-magnetic particles of the order of magnitude of controlled external field, be necessary to carry out the magnetization that pre-service removes any remnants.The method for optimizing that is used for this is that demagnetization is handled.In this demagnetization is handled, shown in Fig. 5 A, apply vibration external magnetic field with alternating direction and maximum intensity decrescence.Carry out off-state and measure, at t
0Apply external field H
App, and from t
B, 1To t
E, 1Carrying out conducting state measures.Determine that once more actual value is poor between conducting state and the off-state value.At t
1The time cut off magnetic field H
AppAfterwards, also there is residual magnetization usually.This residual magnetization is a material behavior, can be used for from t
B, 2To t
B, 2Extra measurement.
Selectable, measurement can be handled by demagnetization in a particular manner and carry out, and this mode is different from the mode that is used to obtain normal condition, for example demagnetization around certain bias-field, as shown in Figure 6.Measurement is subsequently carried out in finite field, for example the bias-field of having carried out demagnetization around it.After being cut off, can also be externally final magnetic field carries out.
Fig. 7 is the figure of semiconductor devices 11 together with the embodiment of access device 2.Semiconductor devices 11 comprises various devices: measurement mechanism 4, storer 7, control device 8 and access control 9.And semiconductor devices comprises a plurality of safety elements 12 and switch 10.Storer 7 comprises a plurality of memory element 7A, 7B, 7C..., and storage control 5 controls 6 with reading.It is a function that control device 8 and access control 9 can be integrated into, and becomes microprocessor or special circuit like this.Control device 8 needn't only be exclusively used in the measurement of safety element 12 impedances, the control of storing and reading, and also the function of may command entire semiconductor device comprises having other storer finance or identity data.Access device 2 is card reader normally, but can be other device, for example utilizes it to carry out initialized device.
The example operation of the exemplary circuit of semiconductor devices 11 is as follows: self-access device 2 transmits a signal to semiconductor devices 11, request initialization or validity check.The value of the impedance of safety element 12 is measured by control device 8, and is sent to conversion equipment 4 with the frequency that depends on impedance, and then goes to storer 7 by switch 10.Conversion equipment comprises oscillator, counter and reference oscillator usually so that clock frequency to be provided, or the A/D converter of standard.This has caused the digitized signal of the impedance actual value of the safety element that expression measures.If do not compare, then can be present in the SI unit of any kind of, but also may reside in the specific value of any device with any externally measured value.Depend on switch 10, can store actual value or actual value is offered access control 9.Switch once for example wherein comprises fuse but switch only is preferably.It will be apparent to those skilled in the art that, do not get rid of switch 10 and storage control 5 are integrated in the functional unit.Access control 9 will be compared actual value and reference value.If the difference between two values is less than predetermined threshold, for example 3%, then with positive signal-OK state-be sent to control device 8.This will finish immediately, or finish after all actual values and all reference value compare, and perhaps finish after relatively with corresponding reference value in selected a plurality of actual values.Predetermined threshold depends on the precision of measurement mechanism.It can be 10 or 20%, if particularly the number of safety element is very big, and for example 10 or bigger.It also can be less than 1%, and this part ground depends on client's the expectation and the prior art of integrated circuit (IC) design.
Claims (18)
1, a kind of semiconductor devices, provide circuit, cover circuit safe floor, comprise the safety element and the sensor of the regional area of safe floor, it is characterized in that:
-safe floor comprise embedding magnetic particle and
-sensor is a magnetic sensor, can measure the magnetic property of safe floor.
2, semiconductor devices as claimed in claim 1 is characterized in that magnetic sensor is a magnetoresistive transducer, magnetic property can be converted to the actual value of impedance.
3, semiconductor devices as claimed in claim 1 distributes in the safe floor (53) of magnetic particle on circuit that it is characterized in that embedding unevenly.
4, semiconductor devices as claimed in claim 1 is characterized in that magnetic particle is the particles with superparamagnetism that is embedded in the microballon.
5, semiconductor devices as claimed in claim 1 is characterized in that magnetic particle comprises hard magnetic material.
6, semiconductor devices as claimed in claim 2, the magnetoresistive transducer that it is characterized in that having the axes of sensitivity that is basically parallel to safe floor is shaped to the shape of stripes of length in the direction with the axes of sensitivity of being basically perpendicular to.
7, semiconductor devices as claimed in claim 1, the initial actual value of impedance that also provides the storage security element is as the storer of reference value.
8, provide carrier as semiconductor devices one of any among the claim 1-7.
9, be applicable to the card reader of the carrier of claim 8, it is characterized in that, cause the magnetized external magnetic field of magnetic particle in being basically perpendicular to safe floor, have magnetizing assembly in order to produce.
10, card reader as claimed in claim 9 is characterized in that existing the reference sensor that is used for measuring the external magnetic field, makes the external magnetic field to be calibrated.
11, card reader as claimed in claim 9 is characterized in that magnetizing assembly is the part of degaussing circuit.
12, the initial method of one of any semiconductor devices among a kind of claim 1-7 comprises step:
-determine the initial actual value of the impedance of safety element;
-initial actual value is stored in the storer of semiconductor devices as reference value, or be stored in the central database device that is arranged in card reader as claimed in claim 9 or is connected to card reader.
13, a kind of check is as the method for the authenticity of semiconductor devices one of any among the claim 1-7, and this device of method initialization by claim 12 comprises step:
-determine the actual value of the impedance of safety element;
-from storer, read reference value;
-relatively actual value and reference value and
-have only when the difference between actual value and the reference value is lower than predetermined threshold, just approve the authenticity of this semiconductor devices.
14,, it is characterized in that the step of determining actual value comprises the following step as the initialization or the method for inspection of claim 12 or 13:
-measurement off-state value in standard external magnetic field;
-produce the external magnetic field to cause the magnetization of magnetic particle in being basically perpendicular to peace gold layer;
-externally magnetic field is cut off and measures the conducting state value before;
-poor as between conducting state value and the off-state value of the actual value of impedance of determining safety element.
15, as the initialization or the method for inspection of claim 14, it is characterized in that:
At least a portion magnetic particle in the safe floor of-embedding semiconductor devices comprises hard magnetic material; With
-before measuring the off-state value,, carry out pre-service in order to remove magnetic particle in any existing magnetization that is basically perpendicular on the direction of safe floor.
16, as the method for the check authenticity of claim 15, it is characterized in that: under the intensity of the saturated magnetization field intensity that is lower than at least a portion magnetic particle, produce the external magnetic field.
17, as the method for the check authenticity of claim 15, it is characterized in that: the external magnetic field is an alternation, and the amplitude in magnetic field is reduced to the average bias-field of the saturated magnetization field that is lower than at least a portion magnetic particle downwards.
18, as the method for claim 12 or 13, it is characterized in that: at least a portion magnetic particle in the safe floor of embedding semiconductor devices comprises soft magnetic material, and the step of definite actual value comprises the following steps:
-produce the external magnetic field to cause the magnetization of magnetic particle in being basically perpendicular to safe floor;
-before soft magnetic material relaxes towards its saturated magnetization, measure first and second values,
-poor as between first and second values of the actual value of impedance of determining safety element.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02076389 | 2002-04-09 | ||
| EP02076389.2 | 2002-04-09 |
Publications (2)
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| CN1646932A true CN1646932A (en) | 2005-07-27 |
| CN100442071C CN100442071C (en) | 2008-12-10 |
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| CNB038077604A Expired - Fee Related CN100442071C (en) | 2002-04-09 | 2003-04-04 | Method and arrangement for protecting a chip and checking its authenticity |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US6998688B2 (en) |
| EP (1) | EP1499905B1 (en) |
| JP (1) | JP2005522352A (en) |
| KR (1) | KR20050003350A (en) |
| CN (1) | CN100442071C (en) |
| AT (1) | ATE459008T1 (en) |
| AU (1) | AU2003216618A1 (en) |
| DE (1) | DE60331427D1 (en) |
| TW (1) | TWI280675B (en) |
| WO (1) | WO2003085410A1 (en) |
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| CN108806726A (en) * | 2018-05-04 | 2018-11-13 | 佛山科学技术学院 | A kind of Intelligent magnetic sensitive device storage method and device |
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-
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- 2003-04-04 AU AU2003216618A patent/AU2003216618A1/en not_active Abandoned
- 2003-04-04 JP JP2003582546A patent/JP2005522352A/en active Pending
- 2003-04-04 DE DE60331427T patent/DE60331427D1/en not_active Expired - Lifetime
- 2003-04-04 WO PCT/IB2003/001405 patent/WO2003085410A1/en active Application Filing
- 2003-04-04 EP EP03712528A patent/EP1499905B1/en not_active Expired - Lifetime
- 2003-04-04 CN CNB038077604A patent/CN100442071C/en not_active Expired - Fee Related
- 2003-04-04 US US10/510,900 patent/US6998688B2/en not_active Expired - Lifetime
- 2003-04-04 KR KR10-2004-7015933A patent/KR20050003350A/en not_active Application Discontinuation
- 2003-04-04 AT AT03712528T patent/ATE459008T1/en not_active IP Right Cessation
- 2003-04-09 TW TW092108124A patent/TWI280675B/en not_active IP Right Cessation
-
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- 2005-12-08 US US11/299,173 patent/US7288834B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101828261B (en) * | 2007-10-18 | 2012-05-23 | Nxp股份有限公司 | Magnetic detection of back-side layer |
| CN103512589A (en) * | 2012-06-15 | 2014-01-15 | 霍尼韦尔国际公司 | Anisotropic magneto-resistance (AMR) gradiometer/magnetometer to read a magnetic track |
| CN108806726A (en) * | 2018-05-04 | 2018-11-13 | 佛山科学技术学院 | A kind of Intelligent magnetic sensitive device storage method and device |
| CN108806726B (en) * | 2018-05-04 | 2019-11-15 | 佛山科学技术学院 | A kind of Intelligent magnetic sensitive device storage method and device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI280675B (en) | 2007-05-01 |
| TW200306676A (en) | 2003-11-16 |
| EP1499905B1 (en) | 2010-02-24 |
| CN100442071C (en) | 2008-12-10 |
| ATE459008T1 (en) | 2010-03-15 |
| KR20050003350A (en) | 2005-01-10 |
| US6998688B2 (en) | 2006-02-14 |
| JP2005522352A (en) | 2005-07-28 |
| AU2003216618A1 (en) | 2003-10-20 |
| EP1499905A1 (en) | 2005-01-26 |
| US7288834B2 (en) | 2007-10-30 |
| WO2003085410A1 (en) | 2003-10-16 |
| US20060097332A1 (en) | 2006-05-11 |
| DE60331427D1 (en) | 2010-04-08 |
| US20050116307A1 (en) | 2005-06-02 |
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