JPH11211804A - Magnetoresistance effect sensor and security system using it - Google Patents

Magnetoresistance effect sensor and security system using it

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Publication number
JPH11211804A
JPH11211804A JP10015680A JP1568098A JPH11211804A JP H11211804 A JPH11211804 A JP H11211804A JP 10015680 A JP10015680 A JP 10015680A JP 1568098 A JP1568098 A JP 1568098A JP H11211804 A JPH11211804 A JP H11211804A
Authority
JP
Japan
Prior art keywords
sensor
elements
magnetic field
output
row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10015680A
Other languages
Japanese (ja)
Inventor
Hiroyuki Matsumoto
弘之 松本
Kenji Yamamotoya
健二 山本屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NHK Spring Co Ltd
Original Assignee
NHK Spring Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NHK Spring Co Ltd filed Critical NHK Spring Co Ltd
Priority to JP10015680A priority Critical patent/JPH11211804A/en
Publication of JPH11211804A publication Critical patent/JPH11211804A/en
Pending legal-status Critical Current

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  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent fraudulent input imitating input to a sensor from generating by neighboringly arranging the respective elements of two pair or more of magnetoresistance effect (MR) sensors so as to be simultaneously influenced from the magnetic field of an object to be measured, and outputting potential of the connected part between one end of one side element row and one end of the other side element row. SOLUTION: In the (n) channel one output MR sensor 1, a little slender (n) pieces (n is integer of 3 or more) of MR elements R1 -Rn are nearly arranged in parallel, they are connected together in series, and the one side MR element R1 is connected to constant-voltage power source 2 and the other side MR element Rn is earthed. Constant voltage is impressed between the MR elements R1 , Rn, a card magnetically given with inherent physical feature or the like is passed through in the vicinity of the sensor, and the change with the lapse of time of the output voltage is measured. The output voltage is computed by an expression using a factor decided by the magnetic flux density on the position the MR element Rj (1<=j<=n) and the shape of the MR element, because the output voltage is one, even if it is observed and recorded, the magnetic flux density is not obtaind, and the magnetic field can not be imitated.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、磁界の検出を行う
磁気抵抗効果センサ(MRセンサ:Magneto−R
esistance Effect Sensor)及
びそれを用いたセキュリティシステムに関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive sensor (MR sensor: Magneto-R) for detecting a magnetic field.
Efficiency Effect Sensor) and a security system using the same.

【0002】[0002]

【従来の技術】例えばIDカードやクレジットカードな
どの被認証物の偽造や複製を防止する手段として、その
被認証物に固有の物理的な特徴を磁気的に付与し、また
その磁気的特徴をデータとしても記録し、このデータと
実際の磁気的な特徴とを照合して真正性を判定する方法
を用いたセキュリティシステムが知られている。
2. Description of the Related Art As a means for preventing forgery or duplication of an object to be authenticated such as an ID card or a credit card, a physical characteristic inherent to the object to be authenticated is magnetically given and the magnetic characteristic is given to the object. 2. Description of the Related Art There is known a security system using a method of recording data as data and comparing the data with actual magnetic characteristics to determine authenticity.

【0003】この磁気的特徴を測定するセンサとして、
測定対象物(被認証物)の発生する磁場に磁気抵抗効果
素子(MR素子:Magneto−Resistanc
eEffect device)を配置し、その抵抗変
化を測定することでその磁界を測定するMRセンサが用
いられる。
As a sensor for measuring this magnetic characteristic,
A magnetic field generated by an object to be measured (authentication object) is applied to a magnetoresistive element (MR element: Magneto-Resistance).
An e-effect device) is arranged, and an MR sensor that measures a magnetic field by measuring a change in resistance thereof is used.

【0004】代表的な1チャネル1出力MRセンサの回
路構成を図6に示す。MR素子R1、R2を直列に接続
し、その両端に定電圧Vconstを印加する。そして、M
R素子R1とMR素子R2との間の電位を出力Voutとす
る。2つのMR素子R1、R2のある場所の磁束密度をそ
れぞれB1、B2、MR素子R1、R2の形状によって決ま
る係数をそれぞれG1、G2とすると、出力電圧Vout
次のように計算できる。
FIG. 6 shows a circuit configuration of a typical one-channel one-output MR sensor. MR elements R 1 and R 2 are connected in series, and a constant voltage V const is applied to both ends. And M
The potential between the R element R 1 and the MR element R 2 and output V out. Assuming that the magnetic flux densities at the locations where the two MR elements R 1 and R 2 are located are B 1 and B 2 , and the coefficients determined by the shapes of the MR elements R 1 and R 2 are G 1 and G 2 , respectively, the output voltage V out is It can be calculated as follows.

【0005】[0005]

【数1】 (Equation 1)

【0006】[0006]

【発明が解決しようとする課題】上記した1チャネル1
出力MRセンサにあっては、センサから正規の出力系列
を得ることができ、これを記録してこの系列から対応す
る入力系列を求めることもでき、更にセンサに与える磁
界を制御できる技術があれば、センサに与える正規の入
力系列を模倣して磁界を作り出す不正が可能である。従
って、例えば正規のカードを認識したら作動可能となる
機器に上記セキュリティシステムを採用した場合、上記
磁界を作り出す模倣により不正にこの機器を作動させる
ことができ、セキュリティ性が低下する心配がある。
The above-mentioned one channel 1
In the case of an output MR sensor, a normal output sequence can be obtained from the sensor, this can be recorded and a corresponding input sequence can be obtained from this sequence, and if there is a technology capable of controlling the magnetic field applied to the sensor, It is possible to improperly generate a magnetic field by imitating a normal input sequence given to the sensor. Therefore, for example, if the security system is applied to a device that becomes operable when a legitimate card is recognized, the device can be illegally operated by imitation that creates the magnetic field, and there is a concern that security may be reduced.

【0007】一方、例えば2チャネル2出力MRセンサ
のようなnチャネルn出力MRセンサもある。この場
合、n個の出力をn個のデータと照合することから上記
のものよりセキュリティ性が高くなっているものの、そ
れぞれのセンサからの出力系列と制御すべき磁界との関
係を示す連立方程式を立て、それを解き、そしてその解
にあうよう磁界を制御することができれば、センサへの
入力を模倣することが可能である。逆にnチャネルn出
力MRセンサの場合には、通常処理時にn個の出力系列
に対して処理・記録などを行わなければならず、高速な
処理が要求される場合や記録領域に制限がある場合など
にはその適用が困難であると云う問題もある。
On the other hand, there is an n-channel n-output MR sensor such as a 2-channel 2-output MR sensor. In this case, since the n outputs are compared with the n data, the security is higher than the above. However, a simultaneous equation showing the relationship between the output sequence from each sensor and the magnetic field to be controlled is obtained. If we could stand up, solve it, and control the magnetic field to meet that solution, we could imitate the input to the sensor. Conversely, in the case of an n-channel n-output MR sensor, processing and recording must be performed on n output sequences during normal processing, and high-speed processing is required and the recording area is limited. In some cases, there is a problem that its application is difficult.

【0008】本発明は上記した従来技術の問題点に鑑み
なされたものであり、その主な目的は、出力系列から入
力系列を導き出すことを困難にして、センサへの入力を
模倣することによる不正入力を防止することが可能なM
Rセンサ及びそれを用いたセキュリティシステムを提供
することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and its main purpose is to make it difficult to derive an input sequence from an output sequence, and to make it difficult to imitate an input to a sensor. M that can prevent input
An object of the present invention is to provide an R sensor and a security system using the same.

【0009】[0009]

【課題を解決するための手段】上記目的は、本発明によ
れば、測定対象物の磁界を検出するための磁気抵抗効果
センサであって、3つ以上の磁気抵抗効果素子を互いに
電気的に影響するように接続すると共に1つの測定対象
物の磁界の影響を同時に受ける位置に前記各素子を配置
し、これに定電圧電源を供給し、いずれか2つの前記各
素子の間の電位を1カ所または前記素子の数よりも少な
い複数箇所にて出力するようにしたことを特徴とする磁
気抵抗効果センサ、または2対以上の磁気抵抗効果素子
に於いて、各対の一方の素子同士と他方の素子同士とを
互いに接続し、前記一方の素子の列の一端と前記他方の
素子の列の一端とを互いに接続し、前記各素子が1つの
測定対象物の磁界の影響を同時に受けるように、かつ前
記各対の素子同士を近接して配置し、前記一方の素子の
列の他端と前記他方の素子の列の他端に定電圧電源を接
続し、前記一方の素子の列の一端と前記他方の素子の列
の一端との接続部の電位を出力するようにしたことを特
徴とする磁気抵抗効果センサ、及びこれらのセンサによ
り固有の磁界を発生する測定対象物の磁界を検出し、そ
の検出結果により該測定対象物の真正性を判定するセキ
ュリティシステムを提供することにより達成される。
According to the present invention, there is provided a magnetoresistive sensor for detecting a magnetic field of an object to be measured, wherein three or more magnetoresistive elements are electrically connected to each other. The devices are connected so as to affect each other, and the respective devices are arranged at positions simultaneously affected by the magnetic field of one measurement object, and a constant voltage power supply is supplied thereto, and the potential between any two of the devices is set to 1 In a magnetoresistive sensor, or in two or more pairs of magnetoresistive elements, the output is made at a plurality of locations or at a plurality of locations less than the number of the elements, one element of each pair and the other element. Are connected to each other, and one end of the row of the one element and one end of the row of the other element are connected to each other, so that each of the elements is simultaneously affected by the magnetic field of one measurement object. And each element of the pair A constant voltage power supply is connected to the other end of the one element row and the other end of the other element row, and one end of the one element row and one end of the other element row And a magnetoresistive sensor which outputs a potential of a connection portion with the sensor, and a magnetic field of a measurement target that generates a unique magnetic field by these sensors, and the measurement target detects the magnetic field of the measurement target. This is achieved by providing a security system that determines the authenticity of

【0010】[0010]

【発明の実施の形態】以下に、添付の図面を参照して本
発明の好適な実施形態について詳細に説明する。図1は
本発明が適用された第1の実施形態に於けるnチャネル
1出力MRセンサ1の構成を簡略に示す平面図であり、
図2はその回路を示す図である。両図に示すように、や
や細長なn個(n:3以上のレイアウト可能な任意の整
数)のMR素子R1〜Rnを略並列に配置し、これらを直
列に接続している。そして、一方のMR素子R1を定電
圧電源2に接続し、他方のMR素子Rnを接地してい
る。また、MR素子RiとMR素子Ri+1との間に出力端
子Toが設けられている。
Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a plan view schematically showing a configuration of an n-channel one-output MR sensor 1 according to a first embodiment to which the present invention is applied.
FIG. 2 is a diagram showing the circuit. As shown in both figures, n slightly elongated (n: 3 or more arbitrarily configurable integers) MR elements R 1 to R n are arranged substantially in parallel, and these are connected in series. Then, plug one MR element R 1 to the constant voltage power source 2 is grounded and the other MR element R n. Furthermore, MR elements R i and the MR element R i + 1 output terminal T o between are provided.

【0011】MR素子R1とMR素子Rnとの間に定電圧
constを印加する(図2)。そして、図示されない固
有の物理的な特徴を磁気的に付与してなるカードなどの
測定対象物をこのセンサに近接させ、例えば図1に於け
る左右方向に通過させ、その出力電圧Voutの経時変
化、即ち出力系列を測定する。そして、当該nチャネル
1出力MRセンサ1をセキュリティシステムに適用した
場合にはこの出力系列から測定対象物の真正性を判定す
ることとなる。
A constant voltage V const is applied between the MR element R 1 and the MR element R n (FIG. 2). Then, not shown inherent physical characteristics magnetically object to be measured such as applied by comprising card brought close to the sensor, for example, is passed through a in the left-right direction in FIG. 1, with time of the output voltage V out The change, ie the output sequence, is measured. When the n-channel one-output MR sensor 1 is applied to a security system, the authenticity of the object to be measured is determined from this output sequence.

【0012】その場合の出力電圧Voutは、MR素子Rj
(1≦j≦n)の位置の磁束密度をBj及びそのMR素
子の形状によって決まる係数Gjを用いて次のように計
算される。
In this case, the output voltage V out is equal to the MR element R j
The magnetic flux density at the position of (1 ≦ j ≦ n) is calculated as follows using B j and a coefficient G j determined by the shape of the MR element.

【0013】[0013]

【数2】 (Equation 2)

【0014】この構成で、出力電圧Vout(出力系列)
が1つであるため、これを観察し、記録しても上記式か
ら各磁束密度をBjを求めることはできず、磁界を模倣
することはできない。
With this configuration, the output voltage V out (output series)
Therefore, even if this is observed and recorded, B j cannot be obtained for each magnetic flux density from the above equation, and the magnetic field cannot be imitated.

【0015】図3は本発明が適用された第2の実施形態
に於けるnチャネル1出力MRセンサ11の構成を簡略
に示す平面図であり、図4はその回路を示す図である。
両図に示すように、各々対をなすやや細長なn組(n:
2以上のレイアウト可能な任意の整数)のMR素子R
1,1、R1,2〜Rn,1、Rn,2を、各組の一方のMR素子R
1,1〜Rn,1が互いに並列になると共に他方のMR素子R
1,2〜Rn,2も並列になるように接続し、この一方の素子
の列の一端と他方の素子の列の一端とを接続し、各素子
が1つの測定対象物の磁界の影響を同時に受けるよう
に、かつ各組の素子同士が近接するように配置してい
る。そして、一方の素子の列の他端を定電圧電源2に接
続し、他方の素子の列の他端を接地している。また、上
記一方の素子の列の一端と他方の素子の列の一端との接
続部に出力端子Toが設けられている。
FIG. 3 is a plan view schematically showing a configuration of an n-channel one-output MR sensor 11 according to a second embodiment to which the present invention is applied, and FIG. 4 is a diagram showing a circuit thereof.
As shown in both figures, n pairs (n:
2 or more layable MR elements R
1,1 , R 1,2 to R n, 1 , R n, 2 are replaced with one of the MR elements R
1,1 to R n, 1 are parallel to each other and the other MR element R
1,2 to Rn , 2 are also connected in parallel, and one end of a row of one element is connected to one end of a row of the other element, and each element is affected by the magnetic field of one measurement object. Are arranged at the same time and the elements of each set are close to each other. Then, the other end of the row of one element is connected to the constant voltage power supply 2, and the other end of the row of the other element is grounded. The output terminal T o to a connection portion between the one end of the column at one end and the other element row of one of the elements described above are provided.

【0016】これらMR素子R1,1、R1,2〜Rn,1、R
n,2に定電圧電源2から定電圧Vconstを印加する(図
4)。そして、図示されない固有の物理的な特徴を磁気
的に付与してなるカードなどの測定対象物をこのセンサ
に近接させ、例えば図3に於ける左右方向に通過させ、
その出力電圧Voutの経時変化、即ち出力系列を測定す
る。そして、当該nチャネル1出力MRセンサ11をセ
キュリティシステムに適用した場合にはこの出力系列か
ら測定対象物の真正性を判定することとなる。
These MR elements R 1,1 , R 1,2 to R n, 1 , R
A constant voltage V const is applied to n and 2 from the constant voltage power supply 2 (FIG. 4). Then, an object to be measured such as a card magnetically provided with a unique physical characteristic (not shown) is brought close to the sensor, and is passed, for example, in the left-right direction in FIG.
The change with time of the output voltage Vout , that is, the output sequence is measured. When the n-channel one-output MR sensor 11 is applied to a security system, the authenticity of the measurement object is determined from the output sequence.

【0017】その場合の出力電圧Voutは、MR素子R
ij(1≦i≦n、j∈{1、2})の抵抗値をRijとし
て次のように計算できる。
The output voltage V out in that case is equal to the MR element R
The resistance value of ij (1 ≦ i ≦ n, j∈ {1,2}) can be calculated as R ij as follows.

【0018】[0018]

【数3】 (Equation 3)

【0019】この構成で、上記同様に出力電圧V
out(出力系列)が1つであるため、これを観察し、記
録しても上記式から各磁束密度をBjを求めることはで
きず、磁界を模倣することはできない。また、本構成で
は各MR素子が対をなして磁束密度の検出を行っている
ために、各MR素子が独立して磁束密度の検出を行って
いる第1の実施形態に比較して局所的なノイズに強くな
っている。
With this configuration, the output voltage V
Since there is one out (output series), even if this is observed and recorded, B j cannot be obtained for each magnetic flux density from the above equation, and the magnetic field cannot be imitated. Further, in this configuration, since each MR element detects the magnetic flux density in pairs, the locality is smaller than in the first embodiment in which each MR element independently detects the magnetic flux density. It has become strong against noise.

【0020】尚、図5(a)〜図5(d)に示すよう
に、MR素子の組を作るには、さまざまなバリエーショ
ンがある。図の左右方向に測定対象物が通過するものと
して、例えば図5(a)は矩形のMR素子同士を測定対
象物が通過する方向に対して直交する方向に互いに平行
に配置したものであり、図5(b)は平行四辺形状のM
R素子同士を測定対象物が通過する方向に対して傾斜す
る方向に互いに平行に配置したものであり、図5(c)
は矩形のMR素子同士を測定対象物が通過する方向に対
して直交する方向に互いに平行に、かつ互いにオフセッ
トするように配置したものであり、図5(d)は矩形の
MR素子同士を測定対象物が通過する方向に対して傾斜
する方向に互いに平行に配置したものである。また、こ
れらのバリエーションを任意に組み合わせても良い。例
えば、矩形のMR素子同士を測定対象物が通過する方向
に対して傾斜する方向に互いに平行に、かつ互いにオフ
セットするように配置することも考えられる。MRセン
サはこれらの組を任意にn個選び、空間中或いは平面中
に配置することにより構成される。
As shown in FIGS. 5A to 5D, there are various variations in making a set of MR elements. For example, FIG. 5A shows rectangular MR elements arranged parallel to each other in a direction orthogonal to the direction in which the measurement object passes, assuming that the measurement object passes in the left-right direction of the drawing. FIG. 5 (b) shows a parallelogram M
The R elements are arranged parallel to each other in a direction inclined with respect to the direction in which the measurement object passes, and FIG.
Are arranged in such a manner that the rectangular MR elements are mutually parallel to and offset from each other in a direction orthogonal to the direction in which the measurement object passes. FIG. 5D shows the measurement of the rectangular MR elements. They are arranged parallel to each other in a direction inclined with respect to the direction in which the object passes. Further, these variations may be arbitrarily combined. For example, it is conceivable to arrange the rectangular MR elements parallel to each other in a direction inclined with respect to the direction in which the measurement object passes and offset from each other. The MR sensor is configured by arbitrarily selecting n of these sets and arranging them in a space or a plane.

【0021】上記MRセンサをセキュリティシステムに
組み込む場合、例えば測定対象物としてのカードの表面
にそのカード固有の物理的な特徴を磁気的に付与した基
準領域を設け、更にカードの記録領域にこのカード固有
の物理的な特徴を読み取ったデータを直接または暗号化
して記録しておく。そして、上記第1または第2の実施
形態に示したMRセンサをもって、上記基準領域の磁界
を検出し、記録領域に記録されたデータと照合すること
により、そのカードの真正性を判定する。その際、この
MRセンサを部外者に渡される可能性がある場合、セン
サ内の各MR素子の数、位置、向き、センサ間の結線な
どが外部から確認できないようにセンサをモールドする
などの処理を行うことにより、その解析が一層困難にな
り、模倣による不正行為を一層効果的に防止できる。
When the MR sensor is incorporated in a security system, for example, a reference area magnetically provided with a physical characteristic unique to the card is provided on the surface of a card as an object to be measured, and the card is further provided in a recording area of the card. Data obtained by reading unique physical characteristics is recorded directly or in an encrypted form. Then, by using the MR sensor shown in the first or second embodiment, the magnetic field in the reference area is detected and compared with the data recorded in the recording area to determine the authenticity of the card. At this time, if there is a possibility that this MR sensor will be handed over to an outsider, the number, position, orientation, connection between sensors, etc. of the MR element in the sensor should be molded so that the sensor cannot be checked from the outside. By performing the processing, the analysis becomes more difficult and fraudulent acts by imitation can be more effectively prevented.

【0022】尚、上記第1の実施形態では全てのMR素
子を直列に接続したが、部分的に或いは全体的に並列に
接続しても良い。また、第2の実施形態では、MR素子
の組の一方同士及び他方同士を互いに並列に接続し、こ
れらを直列に接続したが、MR素子の組の一方同士を全
部または一部を直列に接続し、また他方同士を同様に接
続し、両者の一端同士を接続するようにしても良い。
Although all the MR elements are connected in series in the first embodiment, they may be connected partially or entirely in parallel. In the second embodiment, one and the other of the pair of MR elements are connected in parallel to each other, and they are connected in series. However, one or more of the pair of MR elements are connected in whole or in part. Alternatively, the other may be connected in the same manner, and one end of both may be connected.

【0023】また、第2の実施形態のようにMR素子が
組になっている場合、各組のMR素子同士は同じ接続形
態になっている必要はないが、同じ接続形態になってい
れば局所的なノイズに強くなる利点がある。
In the case where the MR elements are grouped as in the second embodiment, it is not necessary that the MR elements of each group have the same connection form. There is an advantage of being resistant to local noise.

【0024】更に、上記各実施形態では共に1出力とし
たが、MR素子の数よりも出力の数の方が少なくなるよ
うに設定すれば別の素子の間からも出力して良い。
Further, in each of the above embodiments, one output is used. However, if the number of outputs is set to be smaller than the number of MR elements, output may be performed from another element.

【0025】[0025]

【発明の効果】以上の説明により明らかなように、本発
明による多チャネルMRセンサは、1チャネル1出力M
Rセンサやnチャネルn出力MRセンサと異なり、入力
系列を模倣するための解を得るための理論的な方程式の
変数の数だけ出力が得られないことから、出力系列から
入力系列を導き出すことは、センサ内部のMR素子の
数、各素子毎の特性、位置、向き、結線などについて詳
しく解析しない限り極めて困難になる。また、nチャネ
ルn出力MRセンサと異なり出力が少ないことからその
処理も簡便であり、高速処理が可能となると共に小記憶
容量のシステムにも適用でき、出力系列の処理・記録に
必要な時間的・空間的な資源を節約できる。
As is apparent from the above description, the multi-channel MR sensor according to the present invention has one output M per channel.
Unlike an R sensor or an n-channel n-output MR sensor, the output cannot be obtained by the number of variables of the theoretical equation for obtaining a solution for imitating the input sequence. It becomes extremely difficult unless the number of MR elements inside the sensor, characteristics, position, orientation, connection, etc. of each element are analyzed in detail. In addition, unlike the n-channel n-output MR sensor, the output is small, so that the processing is simple, high-speed processing is possible and the system can be applied to a system with a small storage capacity. -Spatial resources can be saved.

【0026】そして、このセンサを測定対象物の各々に
固有の物理的特徴を磁気的に付与し、それを検出するよ
うにしたセキュリティシステムのセンサとして用いるこ
とで、センサからの出力を調べても入力を模倣すること
による不正入力を防止することが可能となり、そのセキ
ュリティ性が著しく向上する。
By using this sensor as a sensor of a security system which magnetically imparts a unique physical characteristic to each of the objects to be measured and detects the magnetic characteristic, the output from the sensor can be checked. Improper input by imitating the input can be prevented, and the security is significantly improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明が適用された第1の実施形態に於けるn
チャネル1出力MRセンサの構成を簡略に示す平面図。
FIG. 1 shows n in a first embodiment to which the present invention is applied.
FIG. 2 is a plan view schematically showing a configuration of a channel 1 output MR sensor.

【図2】本発明が適用された第1の実施形態に於けるn
チャネル1出力MRセンサの回路を示す図。
FIG. 2 is a diagram illustrating a first embodiment of the present invention;
The figure which shows the circuit of a channel 1 output MR sensor.

【図3】本発明が適用された第2の実施形態に於けるn
チャネル1出力MRセンサの構成を簡略に示す平面図。
FIG. 3 shows n according to a second embodiment to which the present invention is applied.
FIG. 2 is a plan view schematically showing a configuration of a channel 1 output MR sensor.

【図4】本発明が適用された第2の実施形態に於けるn
チャネル1出力MRセンサの回路を示す図。
FIG. 4 shows n according to a second embodiment to which the present invention is applied.
The figure which shows the circuit of a channel 1 output MR sensor.

【図5】(a)〜(d)は、MR素子の形状及び配置バ
リエーションを示す図。
FIGS. 5A to 5D are diagrams illustrating variations in the shape and arrangement of an MR element.

【図6】従来の1チャネル1出力MRセンサの回路を示
す図。
FIG. 6 is a diagram showing a circuit of a conventional one-channel one-output MR sensor.

【符号の説明】[Explanation of symbols]

1、11 nチャネル1出力MRセンサ 2 定電圧電源 R1〜Rn MR素子 R1,1、R1,2〜Rn,1、Rn,2 MR素子 To 出力端子1, 11 n-channel 1 output MR sensor 2 constant voltage source R 1 to R n MR elements R 1,1, R 1,2 ~R n, 1, R n, 2 MR element T o output terminal

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 測定対象物の磁界を検出するための磁
気抵抗効果センサであって、 3つ以上の磁気抵抗効果素子を互いに電気的に影響する
ように接続すると共に1つの測定対象物の磁界の影響を
同時に受ける位置に前記各素子を配置し、これに定電圧
電源を供給し、いずれか2つの前記各素子の間の電位を
1カ所または前記素子の数よりも少ない複数箇所にて出
力するようにしたことを特徴とする磁気抵抗効果セン
サ。
1. A magnetoresistive sensor for detecting a magnetic field of an object to be measured, wherein three or more magnetoresistive elements are electrically connected to each other, and a magnetic field of one object to be measured. Is placed at a position that is simultaneously affected by the above, and a constant voltage power supply is supplied thereto, and the potential between any two of the above elements is output at one place or at a plurality of places less than the number of the above elements. A magnetoresistive sensor.
【請求項2】 固有の磁界を発生する測定対象物の磁
界を検出するための磁気抵抗効果センサであって、 2対以上の磁気抵抗効果素子に於いて、各対の一方の素
子同士と他方の素子同士とを互いに接続し、前記一方の
素子の列の一端と前記他方の素子の列の一端とを互いに
接続し、 前記各素子が1つの測定対象物の磁界の影響を同時に受
けるように、かつ前記各対の素子同士を近接して配置
し、 前記一方の素子の列の他端と前記他方の素子の列の他端
に定電圧電源を接続し、前記一方の素子の列の一端と前
記他方の素子の列の一端との接続部の電位を出力するよ
うにしたことを特徴とする磁気抵抗効果センサ。
2. A magnetoresistive sensor for detecting a magnetic field of an object to be measured which generates a unique magnetic field, wherein at least two pairs of magnetoresistive elements have one element of each pair and the other element. Are connected to each other, and one end of a row of the one element and one end of a row of the other element are connected to each other, so that each of the elements is simultaneously affected by a magnetic field of one measurement object. And arranging the elements of each pair close to each other, connecting a constant voltage power supply to the other end of the row of the one element and the other end of the row of the other element, and connecting one end of the row of the one element And outputting a potential at a connection between the first element and one end of a row of the other element.
【請求項3】 固有の磁界を発生する測定対象物の磁
界を検出し、その検出結果により該測定対象物の真正性
を判定するセキュリティシステムに於いて、 前記測定対象物の磁界を請求項1または請求項2に記載
の磁気抵抗効果センサをもって検出することを特徴とす
るセキュリティシステム。
3. A security system for detecting a magnetic field of a measurement object that generates a unique magnetic field and determining the authenticity of the measurement object based on the detection result, wherein the magnetic field of the measurement object is determined. A security system, wherein the detection is performed using the magnetoresistive sensor according to claim 2.
JP10015680A 1998-01-28 1998-01-28 Magnetoresistance effect sensor and security system using it Pending JPH11211804A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10015680A JPH11211804A (en) 1998-01-28 1998-01-28 Magnetoresistance effect sensor and security system using it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10015680A JPH11211804A (en) 1998-01-28 1998-01-28 Magnetoresistance effect sensor and security system using it

Publications (1)

Publication Number Publication Date
JPH11211804A true JPH11211804A (en) 1999-08-06

Family

ID=11895476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10015680A Pending JPH11211804A (en) 1998-01-28 1998-01-28 Magnetoresistance effect sensor and security system using it

Country Status (1)

Country Link
JP (1) JPH11211804A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003085410A1 (en) * 2002-04-09 2003-10-16 Koninklijke Philips Electronics N.V. Method and arrangement for protecting a chip and checking its authenticity
EP1617472A1 (en) * 2004-07-16 2006-01-18 Axalto SA An active protection device for protecting a circuit against mechanical and electromagnetic attack
US11132434B2 (en) 2016-09-26 2021-09-28 Mitsubishi Electric Corporation Signal processing device, signal processing method and computer readable medium

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003085410A1 (en) * 2002-04-09 2003-10-16 Koninklijke Philips Electronics N.V. Method and arrangement for protecting a chip and checking its authenticity
CN100442071C (en) * 2002-04-09 2008-12-10 Nxp股份有限公司 Method and arrangement for protecting a chip and checking its authenticity
EP1617472A1 (en) * 2004-07-16 2006-01-18 Axalto SA An active protection device for protecting a circuit against mechanical and electromagnetic attack
WO2006011013A2 (en) * 2004-07-16 2006-02-02 Axalto Sa An active protection device for protecting circuit against mechanical and electromagnetic attack.
WO2006011013A3 (en) * 2004-07-16 2006-09-14 Axalto Sa An active protection device for protecting circuit against mechanical and electromagnetic attack.
US7656630B2 (en) 2004-07-16 2010-02-02 Commissariat A L'energie Atomique Active protection device for protecting circuit against mechanical and electromagnetic attack
US11132434B2 (en) 2016-09-26 2021-09-28 Mitsubishi Electric Corporation Signal processing device, signal processing method and computer readable medium

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