CN1642009A - Voltage transfer circuit - Google Patents
Voltage transfer circuit Download PDFInfo
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- CN1642009A CN1642009A CN 200410002017 CN200410002017A CN1642009A CN 1642009 A CN1642009 A CN 1642009A CN 200410002017 CN200410002017 CN 200410002017 CN 200410002017 A CN200410002017 A CN 200410002017A CN 1642009 A CN1642009 A CN 1642009A
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Abstract
The invention relates to a high voltage shifting circuit that includes a couple of P type MOSFET, a couple of N type MOSFET, an inverter and plural trigger circuit. The trigger circuit is connected to the gating of high voltage component and the baseboard area to supply a trigger signal that can last for a while after receiving low voltage control signal. When the circuit state changes, the baseboard voltage of the high voltage component changed. Thus, the critical voltage decrease and the inverting speed is fastened.
Description
Technical field
The invention relates to a kind of voltage shift shifting circuit, refer to a kind of voltage shift shifting circuit that is applicable to high voltage accurate position conversion especially.
Background technology
The voltage shift shifting circuit normally is used for the control signal of low pressure is converted to the control signal of high pressure, for example: when being applied in LCD, usually need the high voltage of 20-40 volt to open membrane transistor, yet its input signal is generally 3 volts, so need transfer by the voltage shift shifting circuit.
Fig. 1 shows the schematic diagram of known voltage transfer circuit, and it is mainly to comprise 11,12, two N types of two P type metal-oxide semiconductor (MOS) MOS13,14 and inverters 15.P type MOS11,12 source electrode provide high-tension high voltage accurate position voltage node (HVDD) 16 to be connected with one, and N type MOS13,14 source electrode then are connected with a low-voltage accurate position voltage node (VSS) 17.The drain of P type MOS11 then is connected with the drain of N type MOS13, the drain of P type MOS12 then is connected with the drain of N type MOS14, wherein the drain of P type MOS11 and N type MOS13 all is connected to node ND1, the drain of P type MOS12 and N type MOS14 all is connected to node ND2, and node ND1 also is connected with the gate of P type MOS12, node ND2 also is connected with the gate of P type MOS11, the output OUT of circuit also is connected with node ND1, Input voltage terminal IN then directly is connected with the gate of N type MOS14, and be connected by the gate of inverter 15 with N type MOS13.Therefore, control these P types MOS11 by input control signal, 12 and these N types MOS13,14 conductings and closing make the accurate position of accurate position of output OUT output HIGH voltage (HVDD) or low-voltage (VSS).
Because input voltage (for example: 3 volts) is very low usually, and high levle output voltage (HVDD) very high (for example: 40 volts), so N type MOS13,14 must use high voltage device.When input voltage was very low, when the high levle output voltage was very high, present solution was with N type MOS13, and 14 wide line is transferred big than (W/L), and with P type MOS11,12 W/L turns down.Yet as N type MOS13,14 W/L transfers when big, N type MOS13,14 drain end electric capacity all can become greatly thereupon, and P type MOS11 is when 12 W/L turns down, operating current then can diminish, and this kind practice will make that the transition time of voltage shift shifting circuit is elongated, thereby cause bigger power consumption.
At last, because N type MOS13,14 must adopt high voltage device, therefore its critical voltage (Threshold Voltage) is higher, if input voltage is when falling very lowly, N type MOS13 then, it is littler that 14 saturation current (Saturation Current) can become, so can cause the more difficult transition of voltage shift shifting circuit, and the feasible whole more difficult design of voltage shift shifting circuit.
Fig. 2 then shows the schematic diagram of another known voltage transfer circuit, its operating principle is all similar with Fig. 1, only, between P type MOS21 and N type MOS23, increase by a P type MOS25, between P type MOS22 and N type MOS24, increase by a P type MOS26, so that for passing through these P types MOS25,26 are used as impedance, to reach the effect of current limliting, yet N type MOS23,24 area still needs very big, and these P types MOS25, and 26 current limliting effect is limited, therefore, how to design a voltage shift shifting circuit,, become the problem of needing solution badly to solve above-mentioned shortcoming.
Summary of the invention
Main purpose of the present invention is that a kind of voltage shift shifting circuit is being provided, so that can reduce its transition time, accelerates its transition.
Another object of the present invention is that a kind of voltage shift shifting circuit is being provided, so that can make circuit can operate in lower input voltage.
Another purpose of the present invention is that a kind of voltage shift shifting circuit is being provided, so that can be by reducing short circuit current by accelerating the transition time, and reduces current loss, to reach less electricity consumption.
For achieving the above object, a kind of voltage shift shifting circuit provided by the invention comprises:
One first switching circuit, have one first switch element and a second switch element, this first switch element and this second switch element have one first end, one second end and one the 3rd end respectively, and this first switch element all is connected with a high levle voltage node with first end of this second switch element;
One second switch circuit, have one the 3rd switch element and one the 4th switch element, the 3rd switch element and the 4th switch element have one the 4th end respectively, one five terminal and one the 6th end, the 4th end of the 3rd switch element is connected with the 3rd end of this first switch element and second end of this second switch element respectively, the 4th end of the 4th switch element is connected with second end of this first switch element and the 3rd end of this second switch element respectively, and the 6th end of the 3rd switch element and the 4th switch element is to join with a low level voltage node, the five terminal of the 3rd switch element is to receive an input control signal, the five terminal of the 4th switch element then receives the inversion signal of this input control signal
Wherein, the 3rd switch element also is connected with one first trigger element and one second trigger element respectively with the 4th switch element, so that for come dynamically to change respectively the 3rd switch element and the residing substrate voltage of the 4th switch element by this first trigger element and this second trigger element, reducing the critical voltage of the 3rd switch element and the 4th switch element, and make the parasitic two-carrier electric crystal conducting between the 3rd switch element and the 4th switch element.
Described voltage shift shifting circuit, wherein this first trigger element and this second trigger element are the inversion signals that receives this input control signal and this input control signal respectively, then produce the triggering signal that continues a Preset Time, so that, change the 3rd switch element or the residing substrate voltage of the 4th switch element for when this voltage shift shifting circuit transition.
Described voltage shift shifting circuit is wherein when this first trigger element changes the residing substrate voltage of the 3rd switch element, with making the electric current of the 3rd switch element increase, to increase transition speed.
Described voltage shift shifting circuit is wherein when this second trigger element changes the residing substrate voltage of the 4th switch element, with making the electric current of the 4th switch element increase, to increase transition speed.
Described voltage shift shifting circuit, wherein the substrate voltage that changed of the 3rd switch element is that the substrate voltage that changed with the 4th switch element is identical.
Described voltage shift shifting circuit, wherein the substrate voltage that changed of the 3rd switch element is that the substrate voltage that changed with the 4th switch element is inequality.
Described voltage shift shifting circuit, wherein this first trigger element and this second trigger element are to be a RC delay circuit.
Described voltage shift shifting circuit, wherein this first trigger element and this second trigger element have a delay cell, an inverter and one and lock (AND gate) respectively.
Described voltage shift shifting circuit, it is characterized in that, it more comprises one the 5th switch element and one the 6th switch element, and it is to be connected between this first switch element and the 3rd switch element and this second switch element and the 4th switch element, so that a current-limiting function to be provided.
Described voltage shift shifting circuit, wherein the 5th switch element and the 6th switch element have one the 7th end, one the 8th end and one the 9th end respectively, so that the 7th bring in the 3rd end of this first switch element and be connected by it for the 5th switch element, and the 5th switch element the 9th is brought in the 4th end of the 3rd switch element and is connected by it, the 6th switch element then the 7th is brought in the 3rd end of this second switch element and is connected by it, and the 6th switch element and the 9th bring in the 4th end of the 4th switch element and be connected by it.
Described voltage shift shifting circuit, wherein this first switch element, this second switch element, the 5th switch element and the 6th switch element are to be P type field effect electric crystal, this three switch element and the 4th switch element then are N type field effect electric crystal.
For achieving the above object, a kind of voltage shift shifting circuit provided by the invention comprises: one first switching circuit, have plural first switch element, and this first switching circuit also is connected with one first voltage node;
One second switch circuit has plural second switch element, this second switch circuit and be to be connected with one second voltage node,
Wherein, when this first voltage node is the high voltage node, and when this second voltage node is lower voltage node, this second switch circuit is to be connected with at least one circuits for triggering, this second switch circuit receives a low-voltage control signal respectively with these at least one circuits for triggering, so that these second switch elements for this second control circuit carry out the switch switching and make these first switch elements of this first switching circuit carry out the coupled switch change action, these at least one circuits for triggering then produce the triggering signal of a lasting Preset Time, when carrying out transition with this first switching circuit of box lunch and this second switch circuit, change the residing substrate voltage of at least one second switch element of this second switch circuit, so that can reduce the critical voltage of this at least one second switch element, with increase circuit transition speed, and export a high voltage control signal.
Described voltage shift shifting circuit, wherein working as this first voltage node is lower voltage node, and when this second voltage node is the high voltage node, this first switching circuit is to be connected with at least one circuits for triggering, this first switching circuit receives a low-voltage control signal respectively with these at least one circuits for triggering, so that these first switch elements for this first control circuit carry out the switch switching and make these second switch elements of this second switch circuit carry out the coupled switch change action, and these at least one circuits for triggering produce the triggering signal that this continues a Preset Time, when carrying out transition, change the residing substrate voltage of at least one first switch element of this first switching circuit with this first switching circuit of box lunch and this second switch circuit.
Described voltage shift shifting circuit wherein has more one the 3rd switch element and one the 4th switch element, so that a current-limiting function to be provided between this first switching circuit and this second switch circuit.
Described voltage shift shifting circuit, wherein these first switching circuits, the 3rd switch element and the 4th switch element are to be P type field effect electric crystal (MOS), these second switch circuit are to be N type field effect electric crystal.
Described voltage shift shifting circuit, wherein these at least one circuits for triggering are to be the RC delay circuit.
Described voltage shift shifting circuit, wherein these at least one circuits for triggering are to have a delay cell, an inverter and one and lock (AND gate).
By above explanation as can be known, the present invention utilizes circuits for triggering to connect high voltage devices, so that can be at the global voltage transfer circuit transition dynamic substrate voltage that changes this high voltage devices of moment, to reduce its critical voltage, and make parasitic two-carrier electric crystal conducting, so that the circuit transition speeds up, and whole electrical source consumption is also less.
Description of drawings
Fig. 1 is first schematic diagram of known voltage transfer circuit;
Fig. 2 is second schematic diagram of known voltage transfer circuit;
Fig. 3 is the circuit diagram of the present invention's first preferred embodiment;
Fig. 4 A is first schematic diagram of circuits for triggering of the present invention;
Fig. 4 B is second schematic diagram of circuits for triggering of the present invention;
Fig. 5 is the circuit diagram of the present invention's second preferred embodiment;
Fig. 6 is the circuit diagram of the present invention's three preferred embodiments;
Fig. 7 is the circuit diagram of the present invention's the 4th preferred embodiment;
Fig. 8 has or not the electric current comparative graph of utilizing triggering signal to change substrate voltage.
Embodiment
As shown in Figure 3, it is by 31,32, two N types of two P type metal-oxide semiconductor (MOS) MOS33, and 34, two circuits for triggering 35,36 and an inverter 37 are formed.
Above-mentioned P type MOS31,32 source electrode are connected with a high voltage accurate position voltage node (HVDD) 301, so that for being connected with a high levle voltage source (for example: 40 volts) by high levle voltage node 301.N type MOS33,34 source electrode then are connected with a low-voltage accurate position voltage node (VSS) 302, and it is possible be connected for ground connection or with a low level voltage source (for example :-40 volts).
The drain of the drain of P type MOS31 and N type MOS33 is connected to node ND3, the drain of the drain of P type MOS32 and N type MOS34 is connected to node ND4, and node ND3 also is connected with the gate of P type MOS32, node ND4 also is connected with the gate of P type MOS31, circuit output end 39 also is connected with node ND3,38 of Input voltage terminals directly are connected with the gate of N type MOS34, and Input voltage terminal 38 and be connected by the gate of inverter 37 with N type MOS33.
Aforesaid circuits for triggering 35, the 36th, be connected with N type MOS33 and N type MOS34 respectively, that is circuits for triggering input 351 is to be connected with the gate of N type MOS33, circuits for triggering output 352 is connected with the residing substrate of N type MOS33 (Substrate) zone, with the substrate voltage of control N type MOS33, and then the critical voltage (Threshold V0ltage) of change N type MOS33.In like manner, the utmost point is connected between the circuits for triggering input 361 of circuits for triggering 36 and the N type MOS34, and its circuits for triggering output 362 is connected with the residing substrate regions of N type MOS34, with the substrate voltage of control N type MOS34, and then the critical voltage of change N type MOS34.
Aforesaid circuits for triggering 35,36 change substrate (substrate) voltage of MOS33 and MOS34 electric crystal respectively, it is except the critical voltage that can reduce MOS33 and MOS34 electric crystal, there is parasitic two-carrier electric crystal (the Bipolar Junction Transistor between MOS transistor substrate and source electrode and the drain simultaneously, BJT) substrate voltage because of MOS33 and MOS34 electric crystal is raised conducting, the electric current that this can strengthen circulation makes the easier transition of voltage carry circuit.
Progress along with manufacture of semiconductor, the high voltage devices processing procedure that wafer current factory is provided provides independently base version of each element, makes circuits for triggering 35,36 its outputs 352,362 can change high voltage devices () substrate voltage for example: N type MOS33,34.In addition, these circuits for triggering 35,36 action and the change values that change substrate voltage are independently, that is, when circuits for triggering 35,36 change the substrate voltage of high voltage devices, can't have influence on the substrate voltage of other elements (another high voltage devices or other elements), and the substrate voltage that it changed can be identical, can also be inequality.
Fig. 4 A shows the schematic diagram of circuits for triggering, its by delay cell 41, inverter 42 and one and lock (AND gate) formed, wherein, delay cell 41 can utilize elements such as flip-flop to implement, according to these circuits for triggering, when input IN transition (transferring high potential to by electronegative potential), output OUT can produce a triggering signal, and this triggering signal will continue a Preset Time that is equivalent to the time of delay of delay cell 41.Fig. 4 B then shows the another kind enforcement schematic diagram of circuits for triggering, it is striven is a RC delay circuit, similarly, according to these circuits for triggering, when input IN transition (transferring high potential to) by electronegative potential, output OUT can produce a triggering signal, and this triggering signal will continue a time Preset Time of asking that is equivalent to RC charging.
Next, please continue with reference to Fig. 3, when importing a low-voltage control signal (for example: 3 volts) by Input voltage terminal 38, this low-voltage control signal is conducting N type MOS34, and low-voltage control signal also inputs to circuits for triggering input 361, so that for the triggering signal that a lasting Preset Time is provided by circuits for triggering 36, and the substrate voltage of change N type MOS34, to reduce its critical voltage, and to make parasitic two-carrier electric crystal conducting, this Preset Time be enough to allow the transition of carrying out of voltage shift shifting circuit.In addition, low-voltage control signal also is sent to N type MOS33 and circuits for triggering 35 via inverter 37, makes N type MOS33 close.
Because MOS34 conducting of N type and N type MOS33 close, and make MOS31 conducting of P type and P type MOS32 close, to export the accurate position of high voltage control signal, and when transition, reduce the critical voltage of N type MOS34 or N type MOS33 by circuits for triggering 35 or 36 triggering signal that produces, and make parasitic two-carrier electric crystal conducting, so that quicken the transition time.
Fig. 5 shows the circuit diagram of the second embodiment of the present invention, it is similar with first embodiment of earlier figures 3, only, between P type MOS51 and N type MOS53, set up a P type MOS55, between P type MOS52 and N type MOS54, set up a P type MOS56, to utilize P type MOS55,56 reach current-limiting function, so that N type MOS53,54 area can be less, and increase transition speed.
Fig. 6 and Fig. 7 show the of the present invention the 3rd and the circuit diagram of the 4th embodiment respectively, it is similar with the circuit diagram of Fig. 3 and Fig. 5 respectively, difference is that output signal is anti-phase, that is output voltage is HVSS, therefore the circuit setting also is that PMOS and NMOS electric crystal exchange, the action of relevant its circuit and annexation thereof are to be equal to aforementioned first and second embodiment, so explanation no longer in detail.
Fig. 8 shows that utilizing triggering signal to change substrate voltage (the present invention) does not change the current ratio of substrate voltage (known technology) than schematic diagram with utilizing triggering signal, wherein, the representative of A1 curve does not utilize triggering signal to change the electric current of substrate voltage, the representative of A2 curve utilizes triggering signal to change the electric current of substrate voltage, to make leakage current increase owing to reduce the critical voltage of high voltage devices, but the present invention utilizes circuits for triggering at transition moment change substrate voltage, the back recovery that transition finishes is normal, so can not continue to produce leakage current, make whole electric current still little a lot of than the electric current in the A1 curve.
Again, learn that the present invention is P with the general supply consumption that utilizes triggering signal to change substrate voltage through simulation
Total=P
HVDD(electrical source consumption of HVDD)+P
VDD(electrical source consumption of VDD)=1.587e
-4+ 6.254e
-5=2.212e
-4And the known total current consume P that does not utilize triggering signal to change substrate voltage (W),
Total=P
HVDD+ P
VDD=3.384e
-4+ 1.711e
-5=3.401e
-4(W), by being as can be known, at high voltage devices partly, adopts the electrical source consumption that utilizes triggering signal to change substrate voltage of the present invention smaller really, and its whole electrical source consumption is also than not utilizing triggering signal to change electrical source consumption little of substrate voltage.
The foregoing description only is to give an example for convenience of description, and the interest field that the present invention advocated should be as the criterion so that claims scope is described certainly, but not only limits to the foregoing description.
Claims (17)
1, a kind of voltage shift shifting circuit is characterized in that, comprising:
One first switching circuit, have one first switch element and a second switch element, this first switch element and this second switch element have one first end, one second end and one the 3rd end respectively, and this first switch element all is connected with a high levle voltage node with first end of this second switch element;
One second switch circuit, have one the 3rd switch element and one the 4th switch element, the 3rd switch element and the 4th switch element have one the 4th end respectively, one five terminal and one the 6th end, the 4th end of the 3rd switch element is connected with the 3rd end of this first switch element and second end of this second switch element respectively, the 4th end of the 4th switch element is connected with second end of this first switch element and the 3rd end of this second switch element respectively, and the 6th end of the 3rd switch element and the 4th switch element is to join with a low level voltage node, the five terminal of the 3rd switch element is to receive an input control signal, the five terminal of the 4th switch element then receives the inversion signal of this input control signal
Wherein, the 3rd switch element also is connected with one first trigger element and one second trigger element respectively with the 4th switch element, so that for come dynamically to change respectively the 3rd switch element and the residing substrate voltage of the 4th switch element by this first trigger element and this second trigger element, reducing the critical voltage of the 3rd switch element and the 4th switch element, and make the parasitic two-carrier electric crystal conducting between the 3rd switch element and the 4th switch element.
2, voltage shift shifting circuit according to claim 1, it is characterized in that, wherein this first trigger element and this second trigger element are the inversion signals that receives this input control signal and this input control signal respectively, then produce the triggering signal that continues a Preset Time, so that, change the 3rd switch element or the residing substrate voltage of the 4th switch element for when this voltage shift shifting circuit transition.
3, voltage shift shifting circuit according to claim 1 is characterized in that, wherein when this first trigger element changes the residing substrate voltage of the 3rd switch element, with making the electric current of the 3rd switch element increase, to increase transition speed.
4, voltage shift shifting circuit according to claim 1 is characterized in that, wherein when this second trigger element changes the residing substrate voltage of the 4th switch element, with making the electric current of the 4th switch element increase, to increase transition speed.
5, voltage shift shifting circuit according to claim 1 is characterized in that, wherein the substrate voltage that changed of the 3rd switch element is that the substrate voltage that changed with the 4th switch element is identical.
6, voltage shift shifting circuit according to claim 1 is characterized in that, wherein the substrate voltage that changed of the 3rd switch element is that the substrate voltage that changed with the 4th switch element is inequality.
7, voltage shift shifting circuit according to claim 1 is characterized in that, wherein this first trigger element and this second trigger element are to be a RC delay circuit.
8, voltage shift shifting circuit according to claim 1 is characterized in that, wherein this first trigger element and this second trigger element have a delay cell, an inverter and one and lock respectively.
9, voltage shift shifting circuit according to claim 1, it is characterized in that, it more comprises one the 5th switch element and one the 6th switch element, it is to be connected between this first switch element and the 3rd switch element and this second switch element and the 4th switch element, so that a current-limiting function to be provided.
10, voltage shift shifting circuit according to claim 9, it is characterized in that, wherein the 5th switch element and the 6th switch element have one the 7th end respectively, one the 8th end and one the 9th end, so that the 7th bring in the 3rd end of this first switch element and be connected by it for the 5th switch element, and the 5th switch element the 9th is brought in the 4th end of the 3rd switch element and is connected by it, the 6th switch element then the 7th is brought in the 3rd end of this second switch element and is connected by it, and the 6th switch element and the 9th bring in the 4th end of the 4th switch element and be connected by it.
11, voltage shift shifting circuit according to claim 9, it is characterized in that, wherein this first switch element, this second switch element, the 5th switch element and the 6th switch element are to be P type field effect electric crystal, and this three switch element and the 4th switch element then are N type field effect electric crystal.
12, a kind of voltage shift shifting circuit is characterized in that, comprising: one first switching circuit, have plural first switch element, and this first switching circuit also is connected with one first voltage node;
One second switch circuit has plural second switch element, this second switch circuit and be to be connected with one second voltage node,
Wherein, when this first voltage node is the high voltage node, and when this second voltage node is lower voltage node, this second switch circuit is to be connected with at least one circuits for triggering, this second switch circuit receives a low-voltage control signal respectively with these at least one circuits for triggering, so that these second switch elements for this second control circuit carry out the switch switching and make these first switch elements of this first switching circuit carry out the coupled switch change action, these at least one circuits for triggering then produce the triggering signal of a lasting Preset Time, when carrying out transition with this first switching circuit of box lunch and this second switch circuit, change the residing substrate voltage of at least one second switch element of this second switch circuit, so that can reduce the critical voltage of this at least one second switch element, with increase circuit transition speed, and export a high voltage control signal.
13, voltage shift shifting circuit according to claim 12, it is characterized in that, wherein working as this first voltage node is lower voltage node, and when this second voltage node is the high voltage node, this first switching circuit is to be connected with at least one circuits for triggering, this first switching circuit receives a low-voltage control signal respectively with these at least one circuits for triggering, so that these first switch elements for this first control circuit carry out the switch switching and make these second switch elements of this second switch circuit carry out the coupled switch change action, and these at least one circuits for triggering produce the triggering signal that this continues a Preset Time, when carrying out transition, change the residing substrate voltage of at least one first switch element of this first switching circuit with this first switching circuit of box lunch and this second switch circuit.
14, voltage shift shifting circuit according to claim 12 is characterized in that, wherein has more one the 3rd switch element and one the 4th switch element between this first switching circuit and this second switch circuit, so that a current-limiting function to be provided.
15, voltage shift shifting circuit according to claim 14 is characterized in that, wherein these first switching circuits, the 3rd switch element and the 4th switch element are to be P type field effect electric crystal, and these second switch circuit are to be N type field effect electric crystal.
16, voltage shift shifting circuit according to claim 12 is characterized in that, wherein these at least one circuits for triggering are to be the RC delay circuit.
17, voltage shift shifting circuit according to claim 12 is characterized in that, wherein these at least one circuits for triggering are to have a delay cell, an inverter and one and lock.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100020177A CN1331308C (en) | 2004-01-12 | 2004-01-12 | Voltage transfer circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100020177A CN1331308C (en) | 2004-01-12 | 2004-01-12 | Voltage transfer circuit |
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| Publication Number | Publication Date |
|---|---|
| CN1642009A true CN1642009A (en) | 2005-07-20 |
| CN1331308C CN1331308C (en) | 2007-08-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100020177A Expired - Fee Related CN1331308C (en) | 2004-01-12 | 2004-01-12 | Voltage transfer circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104348472A (en) * | 2013-07-29 | 2015-02-11 | 奕力科技股份有限公司 | Voltage level converting circuit |
| CN106866707A (en) * | 2017-04-14 | 2017-06-20 | 山西大学 | A kind of preparation method of benzimidazole simultaneously [2,1 b] thiazole |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5896043A (en) * | 1989-02-10 | 1999-04-20 | Fuji Electric Co., Ltd. | Level shift circuit |
| JP3741026B2 (en) * | 2001-10-31 | 2006-02-01 | ヤマハ株式会社 | Level shift circuit |
-
2004
- 2004-01-12 CN CNB2004100020177A patent/CN1331308C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104348472A (en) * | 2013-07-29 | 2015-02-11 | 奕力科技股份有限公司 | Voltage level converting circuit |
| CN106866707A (en) * | 2017-04-14 | 2017-06-20 | 山西大学 | A kind of preparation method of benzimidazole simultaneously [2,1 b] thiazole |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1331308C (en) | 2007-08-08 |
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