CN1632913A - Method for making silicon thin film on insulating silicon based substrate with graphics - Google Patents
Method for making silicon thin film on insulating silicon based substrate with graphics Download PDFInfo
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- CN1632913A CN1632913A CN 200410097520 CN200410097520A CN1632913A CN 1632913 A CN1632913 A CN 1632913A CN 200410097520 CN200410097520 CN 200410097520 CN 200410097520 A CN200410097520 A CN 200410097520A CN 1632913 A CN1632913 A CN 1632913A
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Abstract
This invention relates to silicon film process method on the isolation silicon underlay with graph, which comprises the following steps: first to process the silicon film to silicon dioxide to silicon bonding slice required by two silicon slices; then to process the silicon to silicon dioxide to silicon film to isolation silicon underlay bonding slice; finally to use erosion method to remove the silicon to silicon dioxide layer on the surface of the said bonding slice surface to finish the silicon film process on the underlay.
Description
(1) technical field
The present invention relates to a kind of in method with making silicon thin film on the insulating silicon based substrate of figure.Be used for the manufacturing of microelectronics machine machinery yarn system (MEMS) movable member and have the satisfactory silicon thin film of preparation on the insulating silicon based substrate of figure.
(2) background technology
At present, in the semiconductor integrated circuit manufacturing technology, the method for making satisfactory silicon thin film on insulating silicon based substrate mainly contains:
1, ion injects and forms the silicon thin film technology.It is to adopt ion to inject the principle of oxygen (SIMOX), and oxonium ion is injected under the silicon chip surface, forms one deck buried regions oxide layer by annealing in process, thereby obtains one deck silicon thin film on insulating silicon based.The silicon thin film good uniformity that this method obtains, but thickness only has 0.25 micron, and insulating oxide also only has 0.4 micron, and damage and defective that the ion injection causes are difficult to eliminate.
2, silicon-silicon bond closes the attenuated polishing technology.It is with a silicon chip, then with another wafer bonding, carries out The high temperature anneal again, and two silicon chips are bonded together securely by silicon oxygen bond, then with a wafer thinning, polishing, obtains desired silicon thin film.The advantage of this method is that the silicon thin film perfection of lattice is good, reaches body silicon level fully, and film thickness can arbitrarily be controlled as required.Shortcoming is that the uniformity and the boundary defect of film is difficult to control, by improving bonding techniques and improving attenuate, polishing technology, at present can be in ± 0.5 micron error the silicon thin film THICKNESS CONTROL, defect concentration has dropped in the integrated circuit technology normal value, becomes silicon thin film manufacturing technology commonly used in high performance integrated circuit development, the production.
3, smart peeling (Smart-cut) technology.This method is to adopt energetic ion to inject hydrogen ion is injected silicon chip, then with oxidation after silicon chip carry out silicon-silicon bond and close, high annealing, silicon chip are peeled away from the hydrogen zone automatically, have obtained the silicon thin film of one deck 0.3-0.4 micron on the Silicon-On-Insulator substrate.But silicon film surface is subjected to the distribution influence of hydrogen, and surface ratio is more coarse, need carry out polishing.
In microelectronics machine mechanical system (MEMS), the method of utilizing the si-substrate integrated circuit technology to combine with the micromechanics microtechnic, obtain silica-based MEMS movable member, just need make silicon thin film having on the insulating silicon based substrate of figure, come to guarantee in postorder processing, can successfully discharge movable member.In above-mentioned three kinds of methods of making silicon thin film, ion implantation technique and smart peeling technology form silicon thin film on insulating silicon based substrate method all can not adopt, and its main cause is to form thicker silicon thin film, can not be used to make silica-based movable member.Can obtain to make the needed thickness of silica-based MEMS movable member though adopt silicon-silicon bond to close the attenuated polishing technology, but still there are the following problems: because silica-based because silicon substrate surface has figure, the increasing of wanting of wanting of wanting of wanting of wanting of wanting of wanting that silicon/silicon key is wanted, the firm degree of bonding reduces, even the cavity appears in the local area, make the fracture of local silicon film in attenuate and polishing, to occur, even come off, damage polishing machine.
(3) summary of the invention
Technical problem to be solved by this invention is to invent a kind of in the method that making silicon thin film on the insulating silicon based substrate of figure is being arranged, overcoming the firm degree of silicon thin film and insulating silicon based substrate bonding reduces, the problem that the fracture of local silicon film occurs, comes off, make that silicon thin film lattice structure damage on the insulating silicon based substrate that is produced on the band figure is little, thickness is even, to satisfy the requirement of making silica-based MEMS movable member.
The technical scheme that the present invention solves the problems of the technologies described above is that this method includes following steps:
(1) earlier two silicon wafer to manufacture is become the satisfactory silicon thin film-silicon dioxide of silicon thin film thickness-silicon bonding wafer;
(2) described silicon thin film-silicon dioxide-silicon bonding wafer and the insulating silicon based substrate silicon/silicon with figure are bonded to silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet;
(3) remove described silicon-silicon dioxide with caustic solution, obtain silicon thin film-insulating silicon based substrate bonding sheet.
The described method that is made into the satisfactory silicon thin film-silicon dioxide of silicon thin film thickness-silicon bonding wafer comprises:
(1) with RCA cleaning method cleaning silicon chip;
(2) oxidation is carried out on the surface of a silicon chip, formed the silicon dioxide oxide layer;
(3) silicon chip that will have the silicon dioxide oxide layer carries out normal temperature bonding with surperficial another silicon chip that does not carry out oxidation, forms silicon-silicon dioxide-silicon bonding wafer;
(4) described silicon-silicon dioxide-silicon bonding wafer is carried out The high temperature anneal;
(5) silicon chip through the silicon-silicon dioxide-silicon bonding wafer of The high temperature anneal is carried out attenuate, polishing obtains the satisfactory silicon thin film-silicon dioxide of silicon thin film thickness-silicon bonding wafer.
The method that described silicon/silicon is bonded to silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet comprises:
(1) the satisfactory silicon thin film-silicon dioxide of described silicon thin film thickness-silicon bonding wafer and the insulating silicon based substrate with figure oxide layer are carried out normal temperature bonding, obtain described silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet;
(2) described silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet that normal temperature bonding is obtained carries out The high temperature anneal.
Remove described silicon-silicon dioxide with caustic solution, the method that obtains silicon thin film-insulating silicon based substrate bonding sheet comprises:
(1) with the described silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet of RCA cleaning method cleaning after The high temperature anneal;
(2) the described silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet after cleaning is carried out oxidation, on silicon surface and insulating silicon based substrate back, form the silicon dioxide oxide layer;
(3) on described silicon dioxide oxide layer, use LPCVD method deposited silicon nitride protective layer, on the silicon nitride protective layer of insulating silicon based substrate back, apply the photoresist protective layer then;
(4) erode the silicon nitride in silicon layer front successively with dry etching method, wet etching method removes the silicon dioxide in silicon layer front;
(5) remove the photoresist protective layer of insulating silicon based substrate back with the dioxysulfate water law;
(6) remove silicon layer with the potassium hydroxide etch;
(7) remove silicon nitride protective layer above the insulating silicon based back side of silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet with the phosphoric acid corrosion method;
(8) remove on the described silicon film surface with wet etching method and insulating silicon based substrate back on the silicon dioxide oxide layer.
Beneficial effect.Because the inventive method has adopted above-mentioned technical scheme, when on having the insulating silicon based substrate of figure, making silicon thin film, be to be made into the satisfactory silicon thin film-silicon dioxide of silicon thin film thickness-silicon bonding wafer earlier, again with the satisfactory silicon thin film-silicon dioxide of silicon thin film thickness-silicon bonding wafer that is obtained and insulating silicon based substrate bonding with figure, form silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet, remove silicon-silicon dioxide layer on the silicon thin film with chemical corrosion method then, there is not attenuate behind silicon thin film and the insulating silicon based substrate bonding, polishing processing, just there is not firmly degree reduction between consequent silicon thin film and insulating silicon based substrate yet, the fracture of local silicon film appears, the problem that comes off, make the silicon thin film lattice structure damage that is produced on the insulating silicon based substrate little, thickness is even, has satisfied the requirement of making silica-based MEMS movable member.
(4) description of drawings
Fig. 1 is the silicon chip generalized section of the inventive method to the band silicon dioxide oxide layer of silicon chip formation;
Fig. 2 is the generalized section of silicon chip and the silicon-silicon dioxide-silicon bonding wafer that another inoxidized wafer bonding forms of Fig. 1 of the present invention;
Fig. 3 obtains the generalized section of the satisfactory silicon thin film-silicon dioxide of silicon thin film thickness-silicon bonding wafer for the silicon-silicon dioxide-silicon bonding wafer attenuate among Fig. 2 of the present invention, polishing back;
Fig. 4 has the generalized section of the insulating silicon based substrate of oxide layer of figure for the present invention;
Fig. 5 carries out the generalized section of silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet of being obtained behind silicon/silicon bonding for silicon thin film-silicon dioxide-silicon bonding wafer among the insulating silicon based substrate of oxide layer that has figure among Fig. 4 of the present invention and Fig. 3;
Fig. 6 is the silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet oxidation among Fig. 5 of the present invention, the generalized section behind the deposit silicon nitride protective layer;
Fig. 7 protects silicon dioxide, the silicon nitride protective layer of insulating silicon based substrate back for the silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet among Fig. 6 of the present invention by the photoresist protective layer, removes the silicon dioxide on the silicon layer, the generalized section behind the silicon nitride protective layer;
Fig. 8 erodes the generalized section of the silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet behind the silicon layer for the silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet among Fig. 7 of the present invention;
Fig. 9 corrodes the silicon nitride protective layer that removes insulating silicon based substrate back for the silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet that is obtained among Fig. 8 of the present invention, after corroding the silicon dioxide layer that removes on silicon thin film and the insulating silicon based substrate, obtain the generalized section of needed silicon thin film-insulating silicon based substrate bonding sheet;
Figure 10 is the step block diagram of the inventive method.
(5) embodiment
The specific embodiment of the present invention is not limited only to following description.Below in conjunction with accompanying drawing the inventive method is further specified.
The step (see figure 10) of the inventive method is:
At first, with general silicon/silicon bonding, attenuate, finishing method two silicon wafer to manufacture are become the satisfactory silicon thin film-silicon dioxide of silicon thin film thickness-silicon bonding wafer;
Then, the satisfactory silicon thin film-silicon dioxide of silicon thin film thickness-silicon bonding wafer that is obtained and insulating silicon based substrate 5 usefulness of oxide layer with figure are general silicon/silicon bonding method is made into silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet;
At last, remove silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet silicon membrane layer 4 lip-deep silicon-silicon dioxide layers, obtain the silicon thin film on the needed insulating silicon based substrate with general chemical corrosion method.
The method that is made into the satisfactory silicon thin film-silicon dioxide of silicon thin film thickness-silicon bonding wafer is as follows:
(1), is about to silicon chip and uses liquid NH respectively No. 1 with general RCA cleaning method cleaning silicon chip
4OH: H
2O
2: H
2O=1: 2: 7 and No. 2 liquid HCL: H
2O
2: H
2O=1: respectively clean 10 minute at 2: 7.
(2) with the synthetic silicon chip method of general hydrogen-oxygen oxidation is carried out on the surface of one silicon chip 2, formed the silicon dioxide (SiO of thick 600 ± 50nm
2) oxide layer 1, as Fig. 1.
(3) inoxidized another silicon chip 4 of silicon chip 2 and surface that will have an oxide layer 1 is loaded on general bonding machine, in the CL bonding machine as KARLSUSS company, after general silicon/cleaning of silicon bonding method dries, carry out normal temperature bonding, form silicon-silicon dioxide-silicon bonding wafer, as Fig. 2.
(4) described silicon-silicon dioxide-silicon bonding wafer is carried out The high temperature anneal, annealed 3 hours down, to reinforce bonding at 1200 ℃.
(5) through the silicon-silicon dioxide-silicon bonding wafer of The high temperature anneal at general attenuate machine, as on the VG200MKII machine of EVG company with general thining method right-silicon chip 4 carries out attenuate, at general polishing machine, as the WP622 or the polishing of WP8040 polishing fluid of producing with Japan on the AVANTI427 type machine produced in USA, form the satisfactory silicon thin film-silicon dioxide of silicon thin film thickness-silicon bonding wafer, as Fig. 3.
The method that is made into silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet is as follows:
(1) being cleaned drying in above-mentioned bonding machine after, the satisfactory silicon thin film-silicon dioxide of described silicon thin film thickness-silicon bonding wafer and the insulating silicon based substrate 5 of oxide layer with figure carry out normal temperature bonding, obtain silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet, as shown in Figure 5.5 is insulating silicon based substrate among the figure, and 3 is figure silicon groove.
(2) silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet that normal temperature bonding obtained is carried out The high temperature anneal, to reinforce bonding.This high annealing is under nitrogen protection, handles 1 hour down at 450 ℃ successively in annealing furnace, handles 1 hour down for 850 ℃, handles 3 hours down for 1200 ℃.
The method of silicon thin film 4 lip-deep silicon-silicon dioxide layers of removing described silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet is as follows:
(1) silicon-silicon dioxide behind the described high annealing-silicon thin film-insulating silicon based substrate bonding sheet is cleaned with above-mentioned RCA cleaning method.
(2) silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet after will cleaning carries out oxidation processes with the hydrogen-oxygen synthetic method, forms the silicon dioxide oxide layer 6 of thick 1000 ± 50nm.
(3) with general LPCVD method deposition of thick 130 ± 50nm silicon nitride (Si on described silicon dioxide oxide layer 6
3N
4) protective layer 7, and at the silicon nitride (Si at described insulating silicon based substrate 5 back sides
3N
4) the RFJ220 negative photoresist that produces with auspicious red company on the protective layer 7 applies the photoresist protective layer.
(4) erode silicon nitride on silicon layer 2 frontside oxide layer 6 with dry etching method successively, wet etching method removes silicon layer 2 frontside oxide layer 6; Described dry etching method is to use LAM490 equipment, and etchant gas is SF
6Described wet etching method (hydrofluoric acid etch) is to use HF: NH
4F=1: 5 HF dilution corroded about 5 minutes, up to exposing silicon layer 2 at 39 ℃ of following corrosion oxidation layers 6.
(5) remove the photoresist protective layer at insulating silicon based substrate 5 back sides with the dioxysulfate water law.Described dioxysulfate water law is a sulfuric acid: hydrogen peroxide=3: 1.
(6) remove silicon layer 2 with the potassium hydroxide etch.Described potassium hydroxide etch is to remove the silicon layer 2 on the silicon dioxide oxide layer 1 with KOH corrosive liquid (prescription: KOH: water: isopropyl alcohol=500 restrain: 600 milliliters: 15 milliliters) down for 85 ℃ ± 2 ℃ in temperature.
(7) remove the silicon nitride protective layer 7 at insulating silicon based substrate 5 back sides of silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet with the phosphoric acid corrosion method.Described phosphoric acid corrosion method is to use phosphoric acid liquid corroding silicon nitride protective layer 7 down at 85 ℃, corrodes about 30 minutes, till exposing insulating silicon based substrate 5 back side oxide layers 6.
(8) remove on described silicon thin film 4 surfaces and the silicon dioxide oxide layer 1,6 on insulating silicon based substrate 5 back sides with above-mentioned wet etching method (hydrofluoric acid etch), thereby just on described insulating silicon based substrate, be made into needed silicon thin film.
Individual event technology in the inventive method, as the burn into gluing of cleaning, oxidation, deposited silicon nitride, silicon/silicon bonding, attenuate, polishing, silicon and silicon oxide layer, silicon nitride, remove glue etc. and be those skilled in the art's current techique, theme that neither the inventive method is not describing in detail at this.
Claims (4)
1, a kind of have the method for making silicon thin film on the insulating silicon based substrate of figure, and it is characterized in that: this method includes following steps:
(1) elder generation becomes two silicon wafer to manufacture the bonding pad of the satisfactory silicon thin film-silicon dioxide of silicon thin film thickness-silicon;
(2) bonding pad with described silicon thin film-silicon dioxide-silicon is bonded to silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet with the insulating silicon based substrate silicon/silicon of oxide layer with figure;
(3) remove described silicon-silicon dioxide with caustic solution, obtain the bonding pad of silicon thin film-insulating silicon based substrate.
2, according to claim 1 have the method for making silicon thin film on the insulating silicon based substrate of figure, and it is characterized in that: the described method that is made into the satisfactory silicon thin film-silicon dioxide of silicon thin film thickness-silicon bonding wafer comprises:
(1) with RCA cleaning method cleaning silicon chip;
(2) oxidation is carried out on the surface of a silicon chip, formed the silicon dioxide oxide layer;
(3) silicon chip that will have the silicon dioxide oxide layer carries out normal temperature bonding with surperficial another silicon chip that does not carry out oxidation, forms silicon-silicon dioxide-silicon bonding wafer;
(4) described silicon-silicon dioxide-silicon bonding wafer is carried out The high temperature anneal;
(5) silicon chip through the silicon-silicon dioxide-silicon bonding wafer of The high temperature anneal is carried out attenuate, polishing obtains the satisfactory silicon thin film-silicon dioxide of silicon thin film thickness-silicon bonding wafer.
3, according to claim 1 have the method for making silicon thin film on the insulating silicon based substrate of figure, and it is characterized in that: the described method that is made into silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet comprises:
(1) the satisfactory silicon thin film-silicon dioxide of described silicon thin film thickness-silicon bonding wafer and the insulating silicon based substrate with figure oxide layer are carried out normal temperature bonding, obtain described silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet;
(2) described silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet that normal temperature bonding is obtained carries out The high temperature anneal.
4, according to claim 1 have the method for making silicon thin film on the insulating silicon based substrate of figure, and it is characterized in that: remove described silicon-silicon dioxide with caustic solution, the method that obtains silicon thin film-insulating silicon based substrate bonding sheet comprises:
(1) with the described silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet of RCA cleaning method cleaning after The high temperature anneal;
(2) the described silicon-silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet after cleaning is carried out oxidation, on silicon surface and insulating silicon based substrate back, form the silicon dioxide oxide layer;
(3) on described silicon dioxide oxide layer, use LPCVD method deposited silicon nitride protective layer, on the silicon nitride protective layer of insulating silicon based substrate back, apply the photoresist protective layer then;
(4) erode the silicon nitride in silicon layer front successively with dry etching method, wet etching method removes the silicon dioxide in silicon layer front;
(5) remove the photoresist protective layer of insulating silicon based substrate back with the dioxysulfate water law;
(6) remove silicon layer with the potassium hydroxide etch;
(7) remove silicon nitride protective layer on the insulating silicon based substrate back of silicon dioxide-silicon thin film-insulating silicon based substrate bonding sheet with the phosphoric acid corrosion method;
(8) remove on the described silicon film surface with wet etching method and insulating silicon based substrate back on the silicon dioxide oxide layer.
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|---|---|---|---|
| CNB2004100975205A CN1317739C (en) | 2004-11-23 | 2004-11-23 | Method for making silicon thin film on insulating silicon based substrate with graphics |
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|---|---|---|---|
| CNB2004100975205A CN1317739C (en) | 2004-11-23 | 2004-11-23 | Method for making silicon thin film on insulating silicon based substrate with graphics |
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| CN1632913A true CN1632913A (en) | 2005-06-29 |
| CN1317739C CN1317739C (en) | 2007-05-23 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109360805A (en) * | 2018-09-28 | 2019-02-19 | 沈阳硅基科技有限公司 | A kind of preparation method of figure soi wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5659192A (en) * | 1993-06-30 | 1997-08-19 | Honeywell Inc. | SOI substrate fabrication |
| SG63832A1 (en) * | 1997-03-26 | 1999-03-30 | Canon Kk | Substrate and production method thereof |
| US6251754B1 (en) * | 1997-05-09 | 2001-06-26 | Denso Corporation | Semiconductor substrate manufacturing method |
| CN1172376C (en) * | 2001-12-29 | 2004-10-20 | 中国科学院上海微系统与信息技术研究所 | Material similar to silicon structure on isolation layer and preparation method |
| CN1459845A (en) * | 2002-05-24 | 2003-12-03 | 旺宏电子股份有限公司 | Method of reducing microparticle residue and defect |
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2004
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109360805A (en) * | 2018-09-28 | 2019-02-19 | 沈阳硅基科技有限公司 | A kind of preparation method of figure soi wafer |
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