CN1632040A - Thermal interface material and its production method - Google Patents
Thermal interface material and its production method Download PDFInfo
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- CN1632040A CN1632040A CN 200310117657 CN200310117657A CN1632040A CN 1632040 A CN1632040 A CN 1632040A CN 200310117657 CN200310117657 CN 200310117657 CN 200310117657 A CN200310117657 A CN 200310117657A CN 1632040 A CN1632040 A CN 1632040A
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- interfacial material
- heat interfacial
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Abstract
The invention relates to a conducting hot interface material based on array of carbon nm pipes, comprising a silver glue matrix which includes a first surface and a second surface corresponding to the first one, several carbon nm pipes distributing in the silver glue matrix which is comprised of pure silver particle, boron nitride particle and synthesized oil, the carbon nm pipes are parallel to each other and extend from the first surface to the second one of the silver glue matrix. Besides, the preparing method of the heat interface material is also disclosed, including the following steps: supply an array of carbon nm pipe which are placed on a base, use silver glue to coat it, solidify the silver glue to form the hot interface material, than put it solidified away from the base.
Description
[technical field]
The present invention relates to a kind of heat interfacial material and manufacture method thereof, relate in particular to a kind of heat interfacial material and manufacture method thereof of utilizing carbon nanotube heat conduction.
[background technology]
In recent years, along with the fast development of semiconducter device integrated technique, the integrated degree of semiconducter device is more and more higher, and still, it is more and more littler that device volume but becomes, and its demand to heat radiation is more and more higher, has become a more and more important problem.For satisfying this needs, various radiating modes such as fan heat radiation, water-cooled auxiliary heat dissipation and heat pipe heat radiation are extensively used, and obtain certain radiating effect, but unfairness because of the contact interface of scatterer and semiconductor integrated device, generally be in contact with one another area less than 2%, none ideal contact interface, fundamentally influence the effect of semiconducter device to the heat sink heat, so the heat interfacial material that increases by a tool higher heat transfer coefficient between scatterer and semiconducter device is necessity with the exposure level that increases the interface in fact.
The traditional hot boundary material be particles dispersed that thermal conductivity is higher in the elargol matrix to form matrix material, as graphite, boron nitride, silicon oxide, aluminum oxide, silver or other metal etc.The heat conductivility of this kind material depends on the character of elargol matrix.Wherein with grease, phase change material be the matrix material of matrix when using because of it as liquid state can with the thermal source surface infiltration, so thermal contact resistance is less, and that silica gel and rubber are the matrix material thermal contact resistance of carrier is relatively large.Such material one common defects is that whole material thermal conductivity is less, representative value is 1W/mK, this more and more can not adapt to the demand of the raising of semiconductor integrated degree to heat radiation, and the heat conduction particle content that increases the elargol matrix makes and is in contact with one another between particle and the particle to increase the thermal conductivity of whole matrix material as far as possible, therefore can reach 4-8W/mK as some special boundary material, yet, when the heat conduction particle content of elargol matrix increases to a certain degree, can make the elargol matrix lose performance originally, as grease meeting hardening, thereby effect of impregnation may variation, it is harder that rubber also can become, thereby lose due snappiness, this all will make the heat interfacial material performance reduce greatly.
A kind of heat interfacial material is arranged recently, be that the thermal conductivity that will align is about carbon fiber one end of 1100W/mK or wholely fixes with polymkeric substance, thereby the vertical direction at heat interfacial material forms the carbon fiber array that aligns, so that each carbon fiber all can form a heat conduction channel, this mode can effectively improve the thermal conductivity of heat interfacial material, reaches 50-90W/mK.But shortcoming of such material is that thickness must be more than 40 microns, and the thickness of the thermal conductivity of whole heat interfacial material and film is inversely proportional to, so be reduced to a certain degree when its thermal resistance, further the space that reduces is quite limited.
For improving the performance of heat interfacial material, improve its heat-conduction coefficient, various materials are by extensive experimentation.People such as Savas Berber delivered the article of a piece " Unusually HighThermal Conductivity of Carbon Nanotubes " by name in 2000 and point out in American Physical Society (APS), " Z " shape (10,10) carbon nanotube at room temperature thermal conductivity can reach 6600W/mK, particular content can be consulted document Phys.Rev.Lett (2000), Vol. 84, P.4613.
United States Patent (USP) the 6th, 407, disclose a kind of heat interfacial material that utilizes carbon nanotube heat conduction No. 922, it is carbon nanotube to be mixed the elargol matrix strike up partnership, make heat interfacial material by injection molded, and the area of two heat-transfer surfaces of this heat interfacial material does not wait, the area that wherein contacts one side with scatterer is greater than the area that contacts one side with thermal source, can help radiator heat-dissipation like this, but the heat interfacial material that this method makes has weak point, one, it is bigger that injection molded makes heat interfacial material thickness, causes the thermal conductivity of this heat interfacial material higher, increases the volume of this heat interfacial material, incompatible with device to the trend of miniaturization development, and heat interfacial material lacks snappiness; Its two, carbon nanotube ordered arrangement not in body material, its homogeneity that distributes at matrix difficulty guarantees, thereby heat conducting homogeneity also is affected, and the advantage of the vertical heat conduction of carbon nanotube underuses, and influences the heat-conduction coefficient of heat interfacial material.
In view of this, provide the good thermal conduction effect of a kind of tool, thin thickness, snappiness is good and the uniform heat interfacial material of thermal conduction is real in necessary.
[summary of the invention]
Be to solve the technical problem of prior art, the purpose of this invention is to provide that a kind of heat-conducting effect is good, thin thickness, the good heat interfacial material of snappiness.
Another object of the present invention provides the manufacture method of this kind heat interfacial material.
For realizing purpose of the present invention, the invention provides a kind of heat interfacial material, it comprises:
One elargol matrix, this elargol matrix comprise a first surface and a second surface with respect to first surface; And a plurality of carbon nanotubes, these a plurality of carbon nanotubes are distributed in the elargol matrix; Wherein this elargol material comprises nano-Ag particles, nano silicon nitride boron particles and synthetic oil, and these a plurality of carbon nanotubes are parallel to each other and extend to second surface along first surface in this elargol matrix.
The manufacture method of heat interfacial material of the present invention may further comprise the steps:
One carbon nano pipe array is provided, and this carbon nano pipe array places in the substrate;
Apply the infiltration carbon nano pipe array with elargol;
Cooling curing forms heat interfacial material.
Compare with existing heat interfacial material, the advantage that heat interfacial material provided by the invention evenly aligns because of the carbon nano pipe array tool, each root carbon nanotube of this heat interfacial material all can form the thermal conduction channel in vertical heat boundary material direction, obtains the higher heat interfacial material of thermal conductivity.
[description of drawings]
Fig. 1 is the substrate synoptic diagram that the present invention contains catalyst film.
Fig. 2 is the carbon nano pipe array synoptic diagram that aligns in substrate grown shown in Figure 1.
Fig. 3 is that elargol of the present invention applies the synoptic diagram that soaks into carbon nano pipe array.
Fig. 4 is that solidified carbon nano-pipe array of the present invention is listed in the process synoptic diagram that matrix is uncovered.
Fig. 5 is the heat interfacial material synoptic diagram of carbon nanotubes array of the present invention.
Fig. 6 is the application synoptic diagram of heat interfacial material of the present invention.
[embodiment]
The present invention is described in detail below in conjunction with the accompanying drawings and the specific embodiments.
See also Fig. 1 and Fig. 2, at first at a substrate 11 uniform depositions one catalyst layer 12, its method can utilize heat deposition, electron beam deposition or sputtering method to finish.Material useable glass, quartz, silicon or the aluminum oxide of substrate 11.Present embodiment adopts porous silicon, and its surface is a porous layer, and the diameter in hole is minimum, is generally less than 3 nanometers.The material of catalyst layer 12 can be iron, cobalt, nickel and alloy thereof, and present embodiment selects for use iron as catalystic material.
Layer of oxidation catalyst 12, form granules of catalyst (figure does not show), the substrate 11 that will be distributed with catalyzer again places Reaktionsofen (figure does not show), under 700～1000 degrees centigrade, feed carbon source gas, grow carbon nano pipe array, wherein carbon source gas can be gases such as acetylene, ethene, the height of carbon nano pipe array 22 can be controlled by controlling its growth time within the specific limits, and general growing height is 1～100 micron, and the growing height of the carbon nano pipe array 22 of present embodiment is 100 microns.The growth method of relevant carbon nano pipe array 22 is comparatively ripe, specifically can consult document Science, 1999,283,512-414 and document J.Am.Chem.Soc, 2001,123,11502-11503, United States Patent (USP) the 6th in addition, 350, No. 488 a kind of method of large area deposition carbon nano pipe array is also disclosed.
See also Fig. 3, Fig. 4, apply with elargol 32 and soak into the complete orientational alignment carbon nano-tube array 22 of growth, treat that elargol 32 soaks into carbon nano pipe array 22 fully.These elargol 32 materials comprise nano-Ag particles, nano silicon nitride boron particles and synthetic oil (Polysynthetic Oils), and wherein, this nano-Ag particles particle diameter is 1～90 nanometer, and purity is 99.9%, and the nm-class boron nitride grain diameter is 1～30 nanometer.The time of soaking into fully of elargol 32 is relevant with the viscosity of the area of height, density and the whole carbon nano pipe array 22 of carbon nano pipe array 22 and elargol 32 self.
Will be through carbon nano pipe array 22 cooling curings of elargol 32 infiltrations, the elargol 32 with this carbon nanotubes array 22 carries out demoulding from substrate 11 again, forms heat interfacial material 40, and its thickness is 100 microns, and is highly consistent with original carbon nano pipe array 22.Be the height that the thickness of heat interfacial material 40 depends on institute's carbon nanometer tube array growing 22, so, can make the heat interfacial material 40 of required different thickness by the growing height of controlling carbon nanotube array 22.
See also Fig. 5 again, heat interfacial material 40 of the present invention, carbon nano pipe array 22 is through elargol 32 fixed formation one, carbon nano pipe array 22 is in elargol 32 vertical, uniform distribution, form a plurality of heat transfer pathway, formed heat interfacial material 40 tool thermal conductivitys are higher, and the uniform characteristics of heat conduction.
The heat interfacial material 40 that the present invention makes, carbon nano pipe array 22 substantially becomes in the form of heat interfacial material 40, and promptly distance becomes between the carbon nanotube of carbon nano pipe array 22, and carbon nano pipe array is not assembled bunchy, the state that keeps initial orientation to arrange.
The elargol 32 that the present invention adopts can be nano-Ag particles, nano silicon nitride boron particles and synthetic oil and mixes, and its thermal conductivity is higher, and volatility is lower.Wherein, add the nano silicon nitride boron particles and can effectively improve the heat conducting stability elargol 32 abundant carbon nano pipe arrays 22 that soak into for the benefit of, the requirement of its viscosity is lower than 100mps.
See also Fig. 6, the heat interfacial material 40 that the present invention makes carbon nano pipe array has splendid thermal conductivity, can be widely used in comprising central processing unit (CPU), power transistor, Video Graphics Array chip (VGA), radio frequency chip is in interior electron device 80, heat interfacial material 40 places between electron device 80 and the scatterer 60, a good interface thermo-contact between electron device 80 and the scatterer 60 can be provided, the first surface 42 of heat interfacial material 40 and the surface of electron device 80 (indicating) contacts, contact with the bottom surface (sign) of second surface 44 with the scatterer 60 of first surface 42 corresponding heat interfacial materials 40.Because the heat interfacial material 40 that the present invention makes carbon nano pipe array as thin as a wafer, its thickness is micron order only, so preferable snappiness of tool, promptly be convenient under the surperficial uneven situation of electron device 80, heat interfacial material 40 of the present invention also can provide a good thermo-contact between electron device 80 and the scatterer 60.
Claims (12)
1. a heat interfacial material, it comprises: an elargol matrix, this elargol matrix comprises a first surface and a second surface with respect to first surface, and a plurality of carbon nanotubes, these a plurality of carbon nanotubes are distributed in this elargol matrix, this elargol material comprises nano-Ag particles, nano silicon nitride boron particles and synthetic oil, it is characterized in that, these a plurality of carbon nanotubes are parallel to each other and extend to second surface along first surface in this elargol matrix.
2. heat interfacial material as claimed in claim 1 is characterized in that, this nano-Ag particles particle diameter is 1～90 nanometer, and purity is 99.9%, and the nm-class boron nitride grain diameter is 1～30 nanometer.
3. heat interfacial material as claimed in claim 1 is characterized in that the first surface of this heat interfacial material contacts with thermal source, and this second surface contacts with scatterer.
4. heat interfacial material as claimed in claim 1 is characterized in that, this heat interfacial material thickness is 1～100 micron.
5. heat interfacial material as claimed in claim 1 is characterized in that, this first surface and this second surface are parallel to each other.
6. heat interfacial material as claimed in claim 1 is characterized in that, these a plurality of carbon nanotubes are perpendicular to first and second surface of heat interfacial material.
7. the manufacture method of a heat interfacial material, it may further comprise the steps: a carbon nano pipe array is provided, and this carbon nano pipe array places a substrate; Apply the infiltration carbon nano pipe array with elargol; The elargol behind the carbon nano pipe array is soaked in curing, forms heat interfacial material.
8. as the manufacture method of the 7th described heat interfacial material of claim, it is characterized in that the formation method of this carbon nano pipe array comprises chemical Vapor deposition process.
9. as the manufacture method of the 7th described heat interfacial material of claim, it is characterized in that this elargol material comprises nano-Ag particles, nano silicon nitride boron particles and synthetic oil.
10. as the manufacture method of the 7th described heat interfacial material of claim, it is characterized in that the purity of this nano-Ag particles is 99.9%, particle diameter is 1～90 nanometer, and the nm-class boron nitride grain diameter is 1～30 nanometer.
11. the manufacture method as the 7th described heat interfacial material of claim is characterized in that elargol viscosity is lower than 100mps.
12. the manufacture method as the 7th described heat interfacial material of claim is characterized in that, the manufacture method of this heat interfacial material further comprises from substrate takes the elargol matrix that solidifies carbon nanotube off.
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| CN 200310117657 CN1266247C (en) | 2003-12-24 | 2003-12-24 | Thermal interface material and its production method |
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| CN1266247C CN1266247C (en) | 2006-07-26 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100454526C (en) * | 2005-06-30 | 2009-01-21 | 鸿富锦精密工业（深圳）有限公司 | Thermo-interface material producing method |
| US7535715B2 (en) | 2003-07-09 | 2009-05-19 | Deborah D. L. Chung | Conformable interface materials for improving thermal contacts |
| CN101058721B (en) * | 2006-04-21 | 2010-09-29 | 清华大学 | Method of preparing heat interfacial material |
| CN101959788A (en) * | 2008-02-29 | 2011-01-26 | 富士通株式会社 | Sheet structure, semiconductor device and method of growing carbon structure |
| CN101768427B (en) * | 2009-01-07 | 2012-06-20 | 清华大学 | Thermal interface material and preparation method thereof |
| CN106883828A (en) * | 2017-01-05 | 2017-06-23 | 上海大学 | The preparation method of the compound interface heat sink material based on graphing carbon nanotube array |
-
2003
- 2003-12-24 CN CN 200310117657 patent/CN1266247C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7535715B2 (en) | 2003-07-09 | 2009-05-19 | Deborah D. L. Chung | Conformable interface materials for improving thermal contacts |
| CN100454526C (en) * | 2005-06-30 | 2009-01-21 | 鸿富锦精密工业（深圳）有限公司 | Thermo-interface material producing method |
| CN101058721B (en) * | 2006-04-21 | 2010-09-29 | 清华大学 | Method of preparing heat interfacial material |
| CN101959788A (en) * | 2008-02-29 | 2011-01-26 | 富士通株式会社 | Sheet structure, semiconductor device and method of growing carbon structure |
| CN101959788B (en) * | 2008-02-29 | 2017-03-08 | 富士通株式会社 | The growing method of sheet-like structure, semiconductor device and carbon structure |
| CN101768427B (en) * | 2009-01-07 | 2012-06-20 | 清华大学 | Thermal interface material and preparation method thereof |
| CN106883828A (en) * | 2017-01-05 | 2017-06-23 | 上海大学 | The preparation method of the compound interface heat sink material based on graphing carbon nanotube array |
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| CN1266247C (en) | 2006-07-26 |
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Granted publication date: 20060726 Termination date: 20171224 |