CN1627638A - Method and circuit for designing impedance matching - Google Patents
Method and circuit for designing impedance matching Download PDFInfo
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- CN1627638A CN1627638A CN 200310122563 CN200310122563A CN1627638A CN 1627638 A CN1627638 A CN 1627638A CN 200310122563 CN200310122563 CN 200310122563 CN 200310122563 A CN200310122563 A CN 200310122563A CN 1627638 A CN1627638 A CN 1627638A
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- resistance
- electrically connects
- bipolar transistor
- impedance matching
- electric capacity
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Abstract
The method includes following steps: parallel connecting a capacitance to collector (drain) of bipolar transistor in common emitter (common source) configuration; through feedback action making impedance viewed from base electrode (grid) of bipolar transistor possess resistance value expected in order to reach impedance matching. The method also discloses circuit in impedance matching. The said circuit in impedance matching includes a first bipolar transistor, an inductance, a first resistance, a first power supply, a capacitance, a second bipolar transistor, a second resistance, a second power supply and a third resistance. Parallel-connected combination between an equivalent capacitance and an equivalent resistance generated by base (grid) of second bipolar transistor makes an input impedance of inputting to base (grid) of first bipolar transistor generate resistance value expected. Advantages are: not need of inductance in large size and resistance of generating large noise.
Description
[technical field]
The invention relates to impedance matching, particularly relevant for the method for designing and the circuit of impedance matching.
[background technology]
Often need to do impedance matching at the design electronic circuit.Please refer to Fig. 1.(superheterodyne receiver) is example with superheterodyne receiver, and signal is received by antenna earlier, via band pass filter 101 with the non-target signal filter of desiring frequency band after, desire frequency band signal enter noiselike signal amplifier 102 and be exaggerated.Signal after the amplification is by behind the image frequency rejects trap 103, mixes in mixer 104 with a local oscillator signal 105 and become intermediate frequency (IF) signal after frequency reducing, transfers to signal processing circuit of intermediate frequency 106 again and handles.In order to mate with the output impedance of band pass filter 101, the input impedance of desiring noiselike signal amplifier 102 usually is 50 ohm.
The method that makes amplifier produce 50 ohm of input impedance in the prior art mainly contains four kinds.Please refer to Fig. 2 (a).Generally speaking, the input impedance of field-effect transistor (bipolar transistor) 200 is all very high, therefore producing 50 ohm straightforward procedure in amplifier in is resistance 201 one 50 ohm in parallel of the input of field-effect transistor (bipolar transistor) 200, to satisfy the needs of input impedance matching.But therefore resistance 201 is to be directly connected in amplifier in, and resistance 201 noise that produces can directly cause interference to input signal.According to calculating, even the noise of resistance 201 is not counted, the noise index of this kind amplifier can not meet actual requirement up to 3dB.Institute's parallel resistor 201 also can directly be fallen half with the power consumption of being imported still more, and therefore this configuration (configuration) seldom is used.In Fig. 2 (b), it shows that one utilizes the resistance feedback technique to make input impedance become 50 ohm circuit.This circuit comprises a transistor 202 and resistance 203 and 206.This method mainly is to adjust feedback resistance 204 and 205 to make amplifier in produce input impedance.The more preceding a kind of method of the noise index of the amplifier that this kind method is made is come lowly, but its DC consumption power is very big usually.Please refer to Fig. 2 (c), it shows one common gate/common base (Common-gate/Common-base) circuit.Proposed circuit comprises a transistor 207 and a resistance 208 to reach 50 ohm input impedance.This method mainly is to adjust transistor 207 transduction (transconductance) g
m, make g
m=20mS will make input impedance equal 50 ohm.But the noise of actual measurement proof this kind configuration (configuration) is also not little, and the transistor transduction also has been limited.Last a kind of also be that most popular 50 ohm of input impedance production methods are shown in Fig. 2 (d).Source electrode/emitter-base bandgap grading that this circuit comprises a transistor 209 and inductance 210 tools, one end and this transistor 209 is connected in series.Ideal inductance can not made extra noise, so its minimum noise index should be the same with this transistor 209.In fact most noiselike signal amplifier is all adopted this kind configuration (configuration).But inductance 210 quite accounts for the area on the chip, and the quality factor (qualityfactor) of general chip power sense is not high yet, therefore is a long felt need for a kind of inductance that do not use, but can produces the method for 50 ohm of input impedance.
[summary of the invention]
Purpose of the present invention is providing a kind of method for designing of impedance matching, produces the resistance value of being desired by using electric capacity.
Another object of the present invention is providing a kind of electronic circuit of impedance matching, produces the resistance value of being desired by using electric capacity.
According to conception of the present invention, a kind of method for designing of impedance matching, it is to comprise the following step: the electric capacity that is connected in parallel is in a tool common emitter configuration bipolar transistor one collection utmost point; And obtain a resistance value of being desired in this bipolar transistor one base stage via feedback effect, to reach this impedance matching.
According to above-mentioned conception, this resistance value of desiring is 50 ohm.
According to another conception of the present invention, a kind of method for designing of impedance matching, it is to comprise the following step: the electric capacity that is connected in parallel is in a tool common source configuration field-effect transistor one drain electrode; And obtain a resistance value of being desired in this field-effect transistor one grid via feedback effect, to reach this impedance matching.
According to above-mentioned conception, this resistance value of desiring is 50 ohm.
According to another conception of the present invention, a kind of electronic circuit of impedance matching, it is to comprise: one first bipolar transistor pipe, one emitter-base bandgap grading electrically connects ground connection; One inductance electrically connects this first bipolar transistor, one base stage; One first resistance tool, one end electrically connects this first bipolar transistor, one collection utmost point; One first power supply supply electrically connects this first resistance other end; One electric capacity tool, one end electrically connects this collection utmost point of this first bipolar transistor; One second bipolar transistor pipe, one emitter-base bandgap grading electrically connects ground connection and tool one base stage electrically connects this electric capacity other end; One second resistance electrically connects this second bipolar transistor, one collection utmost point; One second source supply electrically connects this second resistance other end; One the 3rd resistance is electrically connected at this this base stage of second bipolar transistor and this collection interpolar, wherein, by electric capacity and the resistance combination in parallel that produces an equivalence in this this base stage of second bipolar transistor, make and see the resistance value of being desired into this base stage one input impedance generation of this first bipolar transistor, to reach this impedance matching.
According to above-mentioned conception, this resistance value of desiring is 50 ohm.
According to another conception of the present invention, a kind of electronic circuit of impedance matching, it is to comprise: one first field-effect transistor tool one source pole electrically connects ground connection; One inductance electrically connects this first field-effect transistor, one grid; One first resistance tool, one end electrically connects this first field-effect transistor, one drain electrode; One first power supply supply electrically connects this first resistance other end; One electric capacity tool, one end electrically connects this this drain electrode of first field-effect transistor; One second field-effect transistor tool one source pole electrically connects ground connection and tool one grid electrically connects this electric capacity other end; One second resistance electrically connects this second field-effect transistor, one drain electrode; One second source supply electrically connects this second resistance other end; One the 3rd resistance is electrically connected between this this grid of second field-effect transistor and this drain electrode, wherein, by electric capacity and the resistance combination in parallel that produces an equivalence at this this grid of second field-effect transistor, make and see the resistance value of being desired into this grid one input impedance generation of this first field-effect transistor, to reach this impedance matching.
According to above-mentioned conception, this resistance value of desiring is 50 ohm.
[description of drawings]
Fig. 1 is the calcspar of existing superheterodyne receiver;
Fig. 2 (a) produces the mode of 50 ohm of input impedance for existing with 50 Ohmic resistances in parallel;
Fig. 2 (b) feeds back the mode that produces 50 ohm of input impedance for existing with parallel resistance;
Fig. 2 (c) produces the mode of 50 ohm of input impedance for existing with common base or common gate configuration;
Fig. 2 (d) produces the mode of 50 ohm of input impedance for existing with emitter-base bandgap grading or source inductance;
Fig. 3 produces the mode of 50 ohm of input impedance for the present invention's carry in transistor output shunt capacitance and resistance;
Fig. 4 is the circuit diagram according to a 5.2/5.7GHz noiselike signal amplifier of preferred embodiment of the present invention;
Fig. 5 is according to the power gain of a 5.2/5.7GHz noiselike signal amplifier of preferred embodiment of the present invention characteristic to frequency;
Fig. 6 is the characteristic of loss to frequency of turning back according to the input of a 5.2/5.7GHz noiselike signal amplifier of preferred embodiment of the present invention and output;
Fig. 7 is according to the noise signal index of a 5.2/5.7GHz noiselike signal amplifier of preferred embodiment of the present invention characteristic to frequency.
[embodiment]
In order not use inductance to reach impedance matching, the output (the collection utmost point) that the present invention is set forth in bipolar transistor or heterojunction bipolar transistor (Bipolar Junction Transistor or Heterojunction BipolarTransistor) electrically connects a capacitor; Perhaps the output (drain electrode) in field-effect transistor electrically connects a capacitor, and produces the required resistance (being generally 50 ohm) of impedance matching at transistor input (bipolar transistor or heterojunction bipolar transistor are base stage, and field-effect transistor is a grid).Please refer to Fig. 3 (a) to Fig. 3 (c), so that principle of the present invention to be described.Fig. 3 electrically connects the electric capacity 313 that joint group in the lump closes in the bipolar transistor collector terminal under the common emitter configuration (to be designated as C
L) (be designated as R with resistance 316
L) the small-signal equivalent circuit model.In Fig. 3 (a), this circuit comprises: electric capacity 311,312 and 313, resistance 314, controlled current source 315 and resistance 316.In Fig. 3 (b), this circuit comprises: electric capacity 311, resistance 314, electric capacity 317 and resistance 318.In Fig. 3 (c), this circuit comprises: resistance 314, electric capacity 319 and resistance 320.The small-signal equivalent circuit model of this bipolar transistor (is designated as R by base resistance 314
B), electric capacity 311 (is designated as C between basic emitter-base bandgap grading
BE), basis set interelectrode capacitance 312 (is designated as C
BC) and the collection emitter-base bandgap grading between controlled current source 315 form.Controlled current source 315 is to be controlled by voltage V between basic emitter-base bandgap grading between the collection emitter-base bandgap grading
BE, voltage V between this controlled current flow and basic emitter-base bandgap grading
BERatio the transduction (transconductance is designated as g
m).Electric capacity 313 may be simple electric capacity, resistance with resistance 316, also may be the electric capacity, the resistance that are come by the next stage circuit.Electric capacity 313 and resistance 316 also comprise electric capacity, the resistance between the collection emitter-base bandgap grading of transistor itself.It is provable, and the electric capacity 313 of combination in parallel (is designated as C
L), resistance 316 (is designated as R
L) and collect controlled current source 315 between emitter-base bandgap grading, (be designated as C with basis set interelectrode capacitance 312
BC) after the series connection, be equivalent to by an electric capacity 317 and (be designated as C
M) (be designated as R with a resistance 318
M) circuit of being connected, shown in Fig. 3 (b).And C
MAnd R
MSystem is decided by following formula:
C
M＝C
BC(1+g
mR
L) (1)
The electric capacity 317 that can further prove tandem compound (is designated as C
M) and resistance 318 (be designated as R
M), and electric capacity 311 (is designated as C between basic emitter-base bandgap grading
BE) equivalent electric circuit after the parallel connection is equivalent to (be designated as C by an electric capacity 319 in a certain frequency range
In) (be designated as R with a resistance 320
M＇) the circuit of being connected is shown in Fig. 3 (c).And C
InAnd R
MSystem is decided by following formula:
C
in＝C
BE+C
M (3)
By formula (2) and formula (4) as can be known, suitably adjust electric capacity 313 and (be designated as C
L), transduction, the resistance 316 of controlled current source 315 (is designated as R between the collection emitter-base bandgap grading
L) and basis set interelectrode capacitance 312 (be designated as C
BC) numerical value that waits, can make resistance 320 (be designated as R
M＇) (be designated as R with base resistance 314
B) and be the resistance value of being desired (being generally 50 ohm).And electric capacity 319 (is designated as C
In) can it be resonated in the desire frequency by the inductance that a series connection electrically connects, and finish impedance matching.In the above description, though use bipolar transistor to be example, also can use field-effect transistor.
Compared to prior art, the advantage that tool of the present invention is following: need not use inductance to produce the resistance of being desired, though need to use electric capacity, the electric capacity area occupied is less relatively, proposed configuration is not made extra noise signal yet, but and this configuration integration and making on one chip.
See also Fig. 4, it is the circuit diagram according to a 5.2/5.7GHz noiselike signal amplifier of preferred embodiment of the present invention.This circuit comprises an input 400, one bias current source 401, flow resistance is every electric capacity 402, one inductance 404 always, one first power supply supply 406, one first resistance 407 (tool one collected current 405), a first transistor 408, flow resistance is every/ac coupling capacitor 409 always, one second source supply 411, one second resistance 412, one the 3rd resistance 410, one transistor secondses 413 and an output 414.In Fig. 4, first bipolar transistor, 408 tools, one emitter-base bandgap grading electrically connects ground connection; One inductance 404 electrically connects these first bipolar transistor, 408 1 base stages; One first resistance, 407 tools, one end electrically connects this first bipolar transistor, 408 1 collection utmost points; One first power supply supply 406 electrically connects these first resistance, 407 other ends; One electric capacity, 409 tools, one end electrically connects this first bipolar transistor, 408 these collection utmost points; One second bipolar transistor, 413 tools, one emitter-base bandgap grading electrically connects ground connection and tool one base stage electrically connects this electric capacity 409 other ends; One second resistance 412 electrically connects this second bipolar transistor, 413 1 collection utmost points; One second source supply 411 electrically connects these second resistance, 412 other ends; One the 3rd resistance 410 is electrically connected at this second bipolar transistor, 413 these base stages and this collection interpolar, wherein, by electric capacity and the resistance combination in parallel that produces an equivalence in these second bipolar transistor, 413 these base stages, make and see the resistance value of being desired into 408 these base stage one input impedance generations of this first bipolar transistor, to reach this impedance matching.Though in the proposal electronic circuit, use bipolar transistor, also can use field-effect transistor.Shown in Fig. 4 preferred embodiment of the present invention, first resistance 407 and second resistance 412 are 300 ohm; The 3rd resistance 410 is 600 ohm; Direct current obstruct/ac coupling capacitor 409 is 3pF; This first transistor 408 is 12.18 square microns with transistor seconds 413 emitter-base bandgap grading areas; And employing TSMC 0.35um SiGe BiCMOS processing procedure.See in the preferred embodiment of the present invention that impedance into transistor seconds 413 base terminals is equivalent to the combination in parallel of an electric capacity and a resistance, provides to be equivalent to aforementioned C required for the present invention
LAnd R
LBy suitable adjustment this proposal circuit element parameter and bias current (being suitable transduction) as shown in Figure 4, see that the 50 Ohmic resistance values that can desire to some extent in the impedance of the first transistor 408 base stages produce.And be connected on inductance 404 on the first transistor 408 base stages, provide and reached the inductance value that input impedance matching is desired.At output 414 partly, we have used feedback resistance 410 to reach the output impedance coupling.Under the situation that does not need the output impedance coupling (for example under zero-IF or the low-IF receiver situation), can reach the output impedance coupling without feedback resistance 410.Resistance 407 and resistance 412 are respectively the transistorized load of the first order transistor and the second level.Power supply supply 406 and 411 magnitude of voltage are 2 volts.Because we have only used an inductance 404, and are the inductance that is produced on the chip, therefore the not only whole circuit of proposing can be manufactured on the one chip fully, and the area of circuit is less relatively.This commercialization for the proposal circuit is highly beneficial.
The performance of relevant this noiselike signal amplifier on gain and I/O level of impedance match please refer to Fig. 5 and Fig. 6.Experimental result is obvious, the power gain of noiselike signal amplifier at 5.2/5.7GHz of proposing, i.e. scattering parameter (scattering parameter) S
21, be respectively 18.4dB and 17.4dB (referring to Fig. 5).Many noiselike signals amplifier of proposing for the matching degree of input impedance usually with the loss input return loss S that turns back of input in the scattering parameter (scattering parameters)
11Represent.With reference to Fig. 6, S
11Value all is lower than between 5.15GHz and 5.35GHz-(lower better) below the 17dB, all is lower than between 5.725GHz and 5.825GHz-(lower better) below the 16dB, and its value is pretty good.For the matching degree of output impedance usually with the loss input return loss S that turns back of output in the scattering parameter (scatteringparameters)
22Represent.In Fig. 6, S
22Value-(lower better) below the 10dB, also be pretty good.In the matching degree of superheterodyne receiver (superheterodyne receiver) output impedance (with S
22Weigh) just important.If in the application of direct frequency-reducing type (direct conversion or zero-IF) or low intermediate frequency receiver (Low IF), then whether output impedance mates, unimportant.
The performance of relevant this noiselike signal amplifier on noise signal index (noise figure) please refer to Fig. 7.This noiselike signal amplifier is respectively 2.79dB and 2.73dB (lower better) at the noise signal index (noise figure) of 5.2/5.7GHz.This is the whole world optimum value of complete set accepted way of doing sth bipolar transistor noiselike signal amplifier known to the applicant.Generally for the application of 802.11a radio area network (WLAN), the noise signal index of noiselike signal amplifier (noise figure) is as long as be lower than 5dB, and input (output) loss of turning back gets final product less than-10dB, and gaining gets final product greater than 10dB.Therefore, the one 5.2/5.7GHz noiselike signal amplifier of preferred embodiment according to the present invention, it all has goodish result of implementation relevant for the performance on gain, noise signal index, the level of impedance match under 5.2GHz and two frequency ranges of 5.7GHz.
Compared to existing noiselike signal amplifier, the present invention use do not increase noise signal and not the capacitance of space consuming electric capacity produce the required resistance value of input impedance matching.Therefore, proposed design method of impedance matching of the present invention and circuit have more novelty and progressive than prior art.
The foregoing description only is a preferred embodiment of the present invention, is not to be used for limiting scope of the invention process.I.e. similar variation and the modification that claims scope is done according to the present invention is all claims of the present invention and contains.
Claims (8)
1. the method for designing of an impedance matching comprises following step:
Be connected in parallel an electric capacity in a tool common emitter configuration bipolar transistor one collection utmost point; And
Obtain a resistance value of being desired via feedback effect in this bipolar transistor one base stage, to reach this impedance matching.
2. method for designing according to claim 1 is characterized in that, this resistance value of desiring is 50 ohm.
3. the method for designing of an impedance matching comprises following step:
Be connected in parallel an electric capacity in a tool common source configuration field-effect transistor one drain electrode; And
Obtain a resistance value of being desired via feedback effect in this field-effect transistor one grid, to reach this impedance matching.
4. method for designing according to claim 3 is characterized in that, this resistance value of desiring is 50 ohm.
5. the electronic circuit of an impedance matching comprises:
One first bipolar transistor pipe, one emitter-base bandgap grading electrically connects ground connection;
One inductance electrically connects this first bipolar transistor, one base stage;
One first resistance tool, one end electrically connects this first bipolar transistor, one collection utmost point;
One first power supply supply electrically connects this first resistance other end;
One electric capacity tool, one end electrically connects this collection utmost point of this first bipolar transistor;
One second bipolar transistor pipe, one emitter-base bandgap grading electrically connects ground connection and tool one base stage electrically connects this electric capacity other end;
One second resistance electrically connects this second bipolar transistor, one collection utmost point;
One second source supply electrically connects this second resistance other end;
One the 3rd resistance is electrically connected at this this base stage of second bipolar transistor and this collection interpolar,
Wherein, by electric capacity and the resistance combination in parallel that produces an equivalence in this this base stage of second bipolar transistor, make and see the resistance value of being desired into this base stage one input impedance generation of this first bipolar transistor, to reach this impedance matching.
6. electronic circuit according to claim 5 is characterized in that, this resistance value of desiring is 50 ohm.
7. the electronic circuit of an impedance matching comprises:
One first field-effect transistor tool one source pole electrically connects ground connection;
One inductance electrically connects this first field-effect transistor, one grid;
One first resistance tool, one end electrically connects this first field-effect transistor, one drain electrode;
One first power supply supply electrically connects this first resistance other end;
One electric capacity tool, one end electrically connects this this drain electrode of first field-effect transistor;
One second field-effect transistor tool one source pole electrically connects ground connection and tool one grid electrically connects this electric capacity other end;
One second resistance electrically connects this second field-effect transistor, one drain electrode;
One second source supply electrically connects this second resistance other end;
One the 3rd resistance is electrically connected between this this grid of second field-effect transistor and this drain electrode,
Wherein, by electric capacity and the resistance combination in parallel that produces an equivalence at this this grid of second field-effect transistor, make and see the resistance value of being desired into this grid one input impedance generation of this first field-effect transistor, to reach this impedance matching.
8. electronic circuit according to claim 7 is characterized in that, this resistance value of desiring is 50 ohm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200310122563XA CN100544200C (en) | 2003-12-12 | 2003-12-12 | The electronic circuit of impedance matching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200310122563XA CN100544200C (en) | 2003-12-12 | 2003-12-12 | The electronic circuit of impedance matching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1627638A true CN1627638A (en) | 2005-06-15 |
| CN100544200C CN100544200C (en) | 2009-09-23 |
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ID=34761650
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200310122563XA Expired - Fee Related CN100544200C (en) | 2003-12-12 | 2003-12-12 | The electronic circuit of impedance matching |
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| CN (1) | CN100544200C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101861035A (en) * | 2010-04-21 | 2010-10-13 | 清华大学 | Automatic impedance matching method and matching system of electrodeless lamp power supply |
| CN104954943A (en) * | 2014-11-26 | 2015-09-30 | 成都冠深科技有限公司 | Phase shifting type audio processing system based on common-source amplifying circuit |
| WO2017107949A1 (en) * | 2015-12-22 | 2017-06-29 | 上海唯捷创芯电子技术有限公司 | Method for improving linearity of radio frequency power amplifier, compensation circuit and communication terminal |
-
2003
- 2003-12-12 CN CNB200310122563XA patent/CN100544200C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101861035A (en) * | 2010-04-21 | 2010-10-13 | 清华大学 | Automatic impedance matching method and matching system of electrodeless lamp power supply |
| CN101861035B (en) * | 2010-04-21 | 2013-03-13 | 清华大学 | Automatic impedance matching method and matching system of electrodeless lamp power supply |
| CN104954943A (en) * | 2014-11-26 | 2015-09-30 | 成都冠深科技有限公司 | Phase shifting type audio processing system based on common-source amplifying circuit |
| WO2017107949A1 (en) * | 2015-12-22 | 2017-06-29 | 上海唯捷创芯电子技术有限公司 | Method for improving linearity of radio frequency power amplifier, compensation circuit and communication terminal |
| US10833636B2 (en) | 2015-12-22 | 2020-11-10 | Shanghai Vanchip Technologies Co., Ltd. | Method for improving linearity of radio frequency power amplifier, compensation circuit and communications terminal |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100544200C (en) | 2009-09-23 |
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Granted publication date: 20090923 Termination date: 20131212 |