CN1622322A - 用于提高c4互连的可靠性的稳定铜覆盖层 - Google Patents

用于提高c4互连的可靠性的稳定铜覆盖层 Download PDF

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CN1622322A
CN1622322A CNA2004100747849A CN200410074784A CN1622322A CN 1622322 A CN1622322 A CN 1622322A CN A2004100747849 A CNA2004100747849 A CN A2004100747849A CN 200410074784 A CN200410074784 A CN 200410074784A CN 1622322 A CN1622322 A CN 1622322A
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copper
barrier layer
layer
interconnection
metal level
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J·C·巴尔特洛
T－J·程
D·F·艾希施泰特
C·C·戈德史密斯
J·H·格里菲特
D·W·亨德森
R·A·库翁
S·基尔帕特里克
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International Business Machines Corp
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Abstract

一种用于提高C4互连的可靠性的稳定铜覆盖层。公开了改进的集成电路结构，其具有内部电路和在所述结构的外部上的互连(如，C4等)。根据本发明，这些互连包括：在所述结构的外部上的金属层，在金属层上的第一铜层，在铜层上的阻挡层，在阻挡层上的稳定铜层，以及在阻挡层上的锡基焊料凸起。稳定铜层具有足量的铜，以平衡铜在阻挡层上的化学势能梯度，并防止第一铜层内的铜扩散穿过阻挡层。可选地，可在锡基焊料凸起内包括足量的铜，以防止铜扩散穿过阻挡层。从而，锡基焊料凸起包括富铜焊料合金。

Description

用于提高C4互连的可靠性的稳定铜覆盖层
技术领域
本发明一般涉及集成电路的互连结构，尤其涉及减少空洞和分层的可能性的改进互连结构。
背景技术
器件尺寸的减小和时钟速度的增加限制了当今C4互连技术的范围。下一代技术要求的更高电流密度增加了在焊点的球形限制冶金(BLM(ball-limiting metallurgy))互连结构中由原子扩散过程引起的空洞和分层的可能性。该故障模式对于使用高浓度锡(Sn)的焊料的系统尤其严重，如无铅焊料和共晶PbSn焊料(eutectic PbSn solder)。
更具体地说，当使用这些焊料时，铜扩散穿过阻挡层，增加了分层的可能。当使用焊料凸起BLM结构承载含锡焊料时，焊料凸起BLM结构易受球形限制冶金(BLM)中可靠性故障的影响。在这种情况下，铜将扩散穿过阻挡冶金并进入焊料，使铜层形成空洞并耗尽。通过在阻挡层上的化学势能梯度驱动BLM铜的迁移。当存在锡时，铜元素不稳定，优先形成如Cu3Sn或Cu(Ni)6Sn5的金属互化物。下述本发明允许使用这些焊料，并显著减少了铜扩散穿过阻挡层的可能性。因此，本发明显著减少了空洞和分层的可能性，从而增加了成品率和可靠性。
发明内容
本发明提供改进的集成电路结构，其具有内部电路和在所述结构的外部上的互连(如，C4等)。根据本发明，这些互连包括：在所述结构的外部上的金属层，在金属层上的第一铜层，在铜层上的阻挡层，在阻挡层上的稳定铜层，以及在阻挡层上的锡基焊料凸起。稳定铜层具有足量的铜，以平衡铜在阻挡层上的化学势能梯度，并防止第一铜层内的铜扩散穿过阻挡层。可选地，可在锡基焊料凸起内包括足量的铜，以防止铜扩散穿过阻挡层。从而，锡基焊料凸起包括富铜焊料合金。金属层包括扩散冶金(diffusion metallurgy)，扩散冶金包括Al、Ti、TiW、Cr、Ta以及TaN中的一种或多种。阻挡层可以是Ni、V或NiV。锡基焊料凸起可以是共晶PbSn焊料或无铅焊料。
本发明在阻挡层上的焊料中引入足量的铜，以防止不希望的扩散。这样显著减少了铜元素穿过阻挡层的扩散。铜的引入有效地减小了铜在阻挡层上的化学势能梯度。化学势能梯度的减小使得铜元素穿过阻挡层的扩散通量减小，即使在升高的温度下。以这种方式，从而提高了所讨论的应用的适用要求。
从而，本发明控制了焊料合金(对添加的铜层)的成分，以防止BLM分层结构的空洞和铜扩散引起的分层。该BLM阻挡技术允许在先进的CMOS设计中使用更高的电流密度，并提高了当前CMOS设计的可靠性。而且，在制造C4s的当前方法中容易采用该技术。
附图说明
通过参考附图的下述说明，将更好的理解本发明，其中：
图1为互连结构的示意图；
图2为互连结构的示意图；
图3为互连结构的示意图；以及
图4为互连结构的示意图。
具体实施方式
本发明提供了控制焊料合金的成分的结构，以防止BLM分层结构的空洞和铜扩散引起的分层，无论该扩散是由自扩散或通过如电迁移或热迁移的过程加强的自扩散引起的。BLM阻挡技术允许在先进的CMOS设计中使用更高的电流密度，并提高了当前CMOS设计的可靠性。而且，在制造C4s的当前方法中容易采用该技术。
如上所述，当使用C4凸起BLM结构承载含锡焊料时，所述结构易受球形限制冶金(BLM)中可靠性故障的影响，因为铜将扩散穿过阻挡冶金并进入焊料，使铜层形成空洞并耗尽。通过在阻挡层上的化学势能梯度驱动该BLM铜的迁移，因为当锡存在时，铜元素不稳定，从而优先形成如Cu3Sn或Cu(Ni)6Sn5的金属互化物。
本发明在阻挡层上的焊料中引入足量的铜，以防止不希望的扩散。这样显著减少了铜元素穿过阻挡层的扩散。铜的引入有效地减小了铜在阻挡层上的化学势能梯度。该化学势能梯度的减小使得铜元素穿过阻挡层的扩散通量减小，即使在升高的温度下。以这种方式，从而提高了所讨论的应用的适用要求。
图1示出了C4 BLM互连结构，形成于结构(如，衬底)1的外部上。这些互连包括：在衬底上的金属层2、在金属层2上的第一铜层3、在铜层3上的阻挡层4、以及在阻挡层上的锡基焊料凸起5。金属层2包括扩散冶金，扩散冶金包括Al、Ti、TiW、Cr、Ta以及TaN中的一种或多种。阻挡层4可以是Ni、V或NiV。锡基焊料凸起5可以是共晶PbSn焊料或无铅焊料。
如上所述，由于化学势能梯度，铜3与焊料凸起5被强有力地吸引在一起。如果铜3扩散穿过阻挡层4进入焊料凸起5，将在铜层3内产生空洞，从而显著增加了分层的可能性。
图2示出了添加的稳定铜层6，其具有足量的铜，以平衡铜在阻挡层上的化学势能梯度，并防止第一铜层内的铜扩散穿过阻挡层。在退火工艺后，一些铜从层6扩散进入焊料凸起7。从而，锡基焊料凸起7包括富铜焊料合金。
可选地，如图3所示，可在锡基焊料凸起8内包括足量的铜，以防止铜扩散穿过阻挡层，从而消除对特殊的单独的铜层6的需要。另外，如果希望，如图4所示，根据各设计者所需要的铜体积，本发明可包括锡基焊料凸起8和单独铜层6。
可以按几种方式给焊料8添加铜，包括：在被施加到BLM结构前直接合金焊料，在施加锡基焊料前，将铜作为焊料合金的一部分镀到在阻挡层4上引入稳定Cu层6的BLM结构上。所有这些方法能够使焊料和Cu形成合金。这样，在焊料中提高了Cu的化学势能，并减少了穿过阻挡层的扩散。
在芯片的回流工艺中，焊料将从稳定层6溶解足量的Cu，从而增加焊料7的Cu含量，并产生富铜焊料合金。这样，焊料中Cu浓度的增加显著减少了Cu穿过阻挡层4的扩散。因此，本发明显著减少了空洞和分层的可能性，从而增加了成品率和可靠性。
从而，如上所示，本发明在阻挡层上的焊料中引入足量的铜，以防止不希望的扩散。这样显著减少了铜元素穿过阻挡层的扩散。铜的引入有效地减小了铜在阻挡层上的化学势能梯度。该化学势能梯度的减小使得铜元素穿过阻挡层的扩散通量减小，即使在升高的温度下。以这种方式，从而提高了所讨论的应用的适用要求。
从而，本发明控制了焊料合金(对添加的铜层)的成分，以防止BLM分层结构的空洞和铜扩散引起的分层。该BLM阻挡技术允许在先进的CMOS设计中使用更高的电流密度，并提高了当前CMOS设计的可靠性。而且，在制造C4s的当前方法中容易采用该技术。
尽管根据优选实施例说明了本发明，本领域的技术人员将认识到，可以在所附权利要求书的精神和范围内对本发明进行修改。

Claims (22)

1.一种用于集成电路结构的焊料互连，所述互连包括：
在衬底上的金属层；
在所述金属层上的第一铜层；
在所述铜层上的阻挡层；
在所述阻挡层上的稳定铜层；以及
在所述阻挡层上的锡基焊料凸起。
2.根据权利要求1的互连，其中所述稳定铜层包括足量的铜，以平衡铜在所述阻挡层上的化学势能梯度，并防止所述第一铜层内的铜扩散穿过所述阻挡层。
3.根据权利要求1的互连，其中所述锡基焊料凸起包括富铜焊料合金。
4.根据权利要求1的互连，其中所述金属层包括扩散冶金，扩散冶金包括Al、Ti、TiW、Cr、Ta以及TaN中的至少一种。
5.根据权利要求1的互连，其中所述阻挡层包括Ni、V以及NiV中的一种。
6.根据权利要求1的互连，其中所述锡基焊料凸起包括共晶PbSn焊料和无铅焊料中的一种。
7.一种用于集成电路结构的焊料互连，所述互连包括：
在衬底上的金属层；
在所述金属层上的第一铜层；
在所述铜层上的阻挡层；
在所述阻挡层上的铜和锡基焊料合金凸起。
8.根据权利要求7的互连，其中所述铜和锡基焊料合金凸起包括足量的铜，以平衡铜在所述阻挡层上的化学势能梯度，并防止所述第一铜层内的铜扩散穿过所述阻挡层。
9.根据权利要求7的互连，其中所述金属层包括扩散冶金，扩散冶金包括Al、Ti、TiW、Cr、Ta以及TaN中的至少一种。
10.根据权利要求7的互连，其中所述阻挡层包括Ni、V以及NiV中的一种。
11.根据权利要求7的互连，其中所述锡基焊料合金凸起包括共晶PbSn焊料和无铅焊料中的一种。
12.一种集成电路结构，包括：
内部电路；以及
在所述结构的外部上的互连，所述互连包括：
在所述结构的所述外部上的金属层；
在所述金属层上的第一铜层；
在所述铜层上的阻挡层；
在所述阻挡层上的稳定铜层；以及
在所述阻挡层上的锡基焊料凸起。
13.根据权利要求12的结构，其中所述稳定铜层包括足量的铜，以平衡铜在所述阻挡层上的化学势能梯度，并防止所述第一铜层内的铜扩散穿过所述阻挡层。
14.根据权利要求12的结构，其中所述锡基焊料凸起包括富铜焊料合金。
15.根据权利要求12的结构，其中所述金属层包括扩散冶金，扩散冶金包括Al、Ti、TiW、Cr、Ta以及TaN中的至少一种。
16.根据权利要求12的结构，其中所述阻挡层包括Ni、V以及NiV中的一种。
17.根据权利要求12的结构，其中所述锡基焊料凸起包括共晶PbSn焊料和无铅焊料中的一种。
18.一种集成电路结构，包括：
内部电路；以及
在所述结构的外部上的互连，所述互连包括：
在所述结构的所述外部上的金属层；
在所述金属层上的第一铜层；
在所述铜层上的阻挡层；以及
在所述阻挡层上的铜和锡基焊料合金凸起。
19.根据权利要求18的结构，其中所述铜和锡基焊料合金凸起包括足量的铜，以平衡铜在所述阻挡层上的化学势能梯度，并防止所述第一铜层内的铜扩散穿过所述阻挡层。
20.根据权利要求18的结构，其中所述金属层包括扩散冶金，扩散冶金包括Al、Ti、TiW、Cr、Ta以及TaN中的至少一种。
21.根据权利要求18的结构，其中所述阻挡层包括Ni、V以及NiV中的一种。
22.根据权利要求18的结构，其中所述锡基焊料合金凸起包括共晶PbSn焊料和无铅焊料中的一种。
CNA2004100747849A 2003-11-14 2004-09-14 用于提高c4互连的可靠性的稳定铜覆盖层 Pending CN1622322A (zh)

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