CN1617439A - Self-calibrating crystal oscillator and its calibration method and its application-specific integrated circuit - Google Patents
Self-calibrating crystal oscillator and its calibration method and its application-specific integrated circuit Download PDFInfo
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Abstract
Description
技术领域technical field
本发明涉及一种晶体振荡器,特别地,涉及一种可自行校准的晶体振荡器,其可缩短成品的检测时间而降低整体测试成本。The present invention relates to a crystal oscillator, in particular, to a self-calibrating crystal oscillator, which can shorten the testing time of finished products and reduce the overall testing cost.
背景技术Background technique
晶体振荡器一般应用于需要稳定输出频率的电子产品中,例如移动电话等移动式通信电子产品。此类晶体振荡器大多采用频率在10MHz左右的AT截断(AT-cut)石英片作为振动源来构成振荡电路。由于该AT截断石英片的输出频率会随其周围的温度而改变,因此实际上必须设计一种温度补偿电路以消除该AT截断石英片的输出频率的变化。Crystal oscillators are generally used in electronic products that require a stable output frequency, such as mobile communication electronic products such as mobile phones. Most of these crystal oscillators use an AT-cut quartz plate with a frequency of about 10MHz as a vibration source to form an oscillation circuit. Since the output frequency of the AT cut-off quartz plate will change with the surrounding temperature, a temperature compensation circuit must be designed to eliminate the change in the output frequency of the AT cut-off quartz plate.
图1例示一AT截断石英片的输出频率对周围温度的关系图。如图1所示,该AT截断石英片的输出频率与周围温度大致呈三次曲线关系,例如:f=αT3+βT2+γT+δ。该三次曲线可分成低温、中温及高温三个温度区间。在低温度区间(-35℃至约+10℃)中,该曲线包含正斜率的线性区域及改变斜率极性的非线性区域。在中温度区间(+10℃至+50℃),该曲线具有负斜率的线性区域。在高温度区间(+50℃至+90℃),该曲线包含正斜率的线性区域及改变斜率极性的非线性区域。FIG. 1 illustrates the relationship between the output frequency of an AT cut-off quartz plate and the ambient temperature. As shown in Figure 1, the output frequency of the AT cut-off quartz plate has a roughly cubic relationship with the ambient temperature, for example: f=αT 3 +βT 2 +γT+δ. The cubic curve can be divided into three temperature ranges: low temperature, medium temperature and high temperature. In the low temperature range (-35°C to about +10°C), the curve contains a linear region of positive slope and a non-linear region that changes the polarity of the slope. In the middle temperature range (+10°C to +50°C), the curve has a linear region with a negative slope. In the high temperature range (+50°C to +90°C), the curve contains a linear region with a positive slope and a non-linear region that changes the polarity of the slope.
图2是一现有的晶体振荡器10的电路图。如图2所示,晶体振荡器10包含一温度检测电路12、一振荡电路20以及一温度补偿电路40。振荡电路20包含一AT截断石英片22、一并联于AT截断石英片22的反馈电阻24以及一并联于AT截断石英片22的反相器26。晶体振荡器10的输出端28从反相器26的输出侧伸出。振荡电路20还包含分别电气连接于AT截断石英片22两端的二个直流截断电容32、34以及二个可变电容36、38。温度检测电路12可利用一热敏电阻检测AT截断石英片22周围的温度,而温度补偿电路40则根据来自温度检测电路12的温度检测信号将振荡电路20的输出频率维持为一预定值。FIG. 2 is a circuit diagram of a conventional crystal oscillator 10 . As shown in FIG. 2 , the crystal oscillator 10 includes a temperature detection circuit 12 , an oscillation circuit 20 and a temperature compensation circuit 40 . The oscillation circuit 20 includes an AT cut-off quartz plate 22 , a feedback resistor 24 connected in parallel to the AT cut-off quartz plate 22 , and an inverter 26 connected in parallel to the AT cut-off quartz plate 22 . An output 28 of the crystal oscillator 10 projects from the output side of the inverter 26 . The oscillation circuit 20 also includes two DC blocking capacitors 32 , 34 and two variable capacitors 36 , 38 electrically connected to the two ends of the AT blocking quartz plate 22 . The temperature detection circuit 12 can use a thermistor to detect the temperature around the AT cut-off quartz plate 22, and the temperature compensation circuit 40 maintains the output frequency of the oscillation circuit 20 at a predetermined value according to the temperature detection signal from the temperature detection circuit 12.
温度补偿电路40包含一存储电路42及一数字/模拟转换电路44。存储电路42一般是由非易失性存储器构成,用于存储进行温度补偿所需的补偿数据(即用于描述三次曲线的参数)。数字/模拟转换电路44根据该补偿数据及来自温度检测电路12的温度检测信号输出一控制电压,该控制电压分别施加于可变电容36、38的正极以调整其振荡电容。这样,即可控制该振荡电路20的振荡频率,而使得晶体振荡器10的输出频率维持在产品规格容许的范围内。The temperature compensation circuit 40 includes a storage circuit 42 and a digital/analog conversion circuit 44 . The storage circuit 42 is generally composed of a non-volatile memory, and is used to store compensation data required for temperature compensation (ie, parameters used to describe the cubic curve). The digital/analog conversion circuit 44 outputs a control voltage according to the compensation data and the temperature detection signal from the temperature detection circuit 12 , and the control voltage is respectively applied to the positive terminals of the variable capacitors 36 and 38 to adjust their oscillation capacitances. In this way, the oscillating frequency of the oscillating circuit 20 can be controlled, so that the output frequency of the crystal oscillator 10 can be maintained within the range allowed by product specifications.
由于AT截断石英片22是以机械方式(激光)切割而成,因此每一片AT截断石英片22的厚度及切割角度并不完全相同,导致其温度-频率特性亦彼此相异。同理,晶体振荡器10的电子元件之间也存在制程漂移所造成的特性差异。总而言之,晶体振荡器10彼此间存在着因制造程序所产生的差异,因此每一晶体振荡器10的温度-频率特性也不相同,因此必须测量每一晶体振荡器10在运作的温度区间(高、中、低三个温度区间)的温度-频率特性,并据以产生温度补偿数据后写入存储电路42中。然而,分别测量每一晶体振荡器10的温度-频率特性是一件相当耗费时间的工作,导致晶体振荡器10的整体测试成本急剧增加。Since the AT cut-off quartz pieces 22 are cut mechanically (laser), the thickness and cutting angle of each AT cut-off quartz piece 22 are not completely the same, resulting in their temperature-frequency characteristics are also different from each other. Similarly, the electronic components of the crystal oscillator 10 also have characteristic differences caused by process drift. All in all, there are differences between the crystal oscillators 10 due to the manufacturing process, so the temperature-frequency characteristics of each crystal oscillator 10 are also different, so it is necessary to measure the operating temperature range (high temperature) of each crystal oscillator 10. , middle and low temperature ranges) temperature-frequency characteristics, and according to generate temperature compensation data and then write in the storage circuit 42. However, measuring the temperature-frequency characteristics of each crystal oscillator 10 separately is a rather time-consuming task, resulting in a drastic increase in the overall testing cost of the crystal oscillator 10 .
发明内容Contents of the invention
本发明的主要目的在于提供一种可自行校准的晶体振荡器,其可缩短成品的检测时间以降低整体测试成本。The main purpose of the present invention is to provide a self-calibrating crystal oscillator, which can shorten the testing time of finished products and reduce the overall testing cost.
为了达到上述目的,本发明提供一种可自行校准的晶体振荡器,其包含一相位比较器、一电气连接于该相位比较器的第一输入端的时钟信号垫、一电气连接于该相位比较器的第二输入端的振荡元件、一电气连接于该相位比较器的输出端的模拟/数字转换器,以及一电气连接于该模拟/数字转换器的输出端的存储器。该振荡元件是一温度补偿型振荡元件或一表面声波振荡元件,而该存储器是一非易失性存储器。In order to achieve the above object, the present invention provides a self-calibrating crystal oscillator, which includes a phase comparator, a clock signal pad electrically connected to the first input end of the phase comparator, a clock signal pad electrically connected to the phase comparator An oscillating element at the second input end of the phase comparator, an analog/digital converter electrically connected to the output end of the phase comparator, and a memory electrically connected to the output end of the analog/digital converter. The oscillating element is a temperature compensation type oscillating element or a surface acoustic wave oscillating element, and the memory is a non-volatile memory.
本发明的可自行校准的晶体振荡器还可包含一设置于该相位比较器的第一输入端与该时钟信号垫之间的第一开关、一设置于该振荡元件与该时钟信号垫之间的第二开关以及一用于控制该第一开关及该第二开关的逻辑控制元件。当该晶体振荡器在进行自行校准时,该第二开关是处于关闭状态且该第一开关是处于开启状态,因此一参考时钟可经由该时钟信号垫传送至该相位比较器的第一输入端。相应地,当该晶体振荡器欲输出一时钟信号时,该第一开关是处于关闭状态且该第二开关是处于开启状态,因此该振荡元件的时钟信号经温度补偿后可经由该时钟信号垫而稳定地输出。The self-calibrating crystal oscillator of the present invention may further comprise a first switch disposed between the first input terminal of the phase comparator and the clock signal pad, a first switch disposed between the oscillating element and the clock signal pad The second switch and a logic control element for controlling the first switch and the second switch. When the crystal oscillator is performing self-calibration, the second switch is in the off state and the first switch is in the on state, so a reference clock can be transmitted to the first input terminal of the phase comparator through the clock signal pad . Correspondingly, when the crystal oscillator intends to output a clock signal, the first switch is in the off state and the second switch is in the on state, so the clock signal of the oscillating element can pass through the clock signal pad after temperature compensation And stable output.
与现有技术相比,由于本发明的晶体振荡器在接收到该校准信号后即可自行进行校准,因此在并联若干个晶体振荡器后一测试平台可同时(平行地)进行温度校准。这样,该测试平台所消耗的校准时间由该若干个晶体振荡器均分,因而降低每一个晶体振荡器的校准时间以降低其测试成本。Compared with the prior art, since the crystal oscillator of the present invention can calibrate itself after receiving the calibration signal, a test platform can perform temperature calibration simultaneously (in parallel) after several crystal oscillators are connected in parallel. In this way, the calibration time consumed by the test platform is equally divided by the several crystal oscillators, thereby reducing the calibration time of each crystal oscillator to reduce its test cost.
附图说明Description of drawings
图1例示一AT截断石英片的输出频率对周围温度的关系图;Fig. 1 illustrates the relationship diagram of the output frequency of an AT cut-off quartz plate to the ambient temperature;
图2是一现有的晶体振荡器的电路图;Fig. 2 is a circuit diagram of an existing crystal oscillator;
图3是根据本发明的晶体振荡器的示意图;3 is a schematic diagram of a crystal oscillator according to the present invention;
图4是根据本发明的集成电路的功能方块图;Figure 4 is a functional block diagram of an integrated circuit according to the present invention;
图5是根据本发明的晶体振荡器的运作流程图;Fig. 5 is the operation flowchart of crystal oscillator according to the present invention;
图6是根据本发明的晶体振荡器的并联示意图;Fig. 6 is a parallel schematic diagram of a crystal oscillator according to the present invention;
图7是根据本发明的专用集成电路的功能方块图。Fig. 7 is a functional block diagram of an ASIC according to the present invention.
图中元件符号说明:Explanation of component symbols in the figure:
50 晶体振荡器50 crystal oscillator
52 振荡元件52 Oscillating elements
60 集成电路60 integrated circuits
62、102 时钟信号垫62, 102 clock signal pad
64 电源垫64 power pads
66 接地垫66 ground pad
68 控制垫68 control pad
70、110 相位比较器、70, 110 phase comparator,
70A、110A 第一输入端、70A, 110A first input terminal,
70B、110B 第二输入端、70B, 110B second input terminal,
70C、110C 输出端70C, 110C output
72、112 第一开关72, 112 first switch
74、114 第二开关74, 114 Second switch
76 逻辑控制元件76 logic control element
78 高压检测器78 High voltage detector
80、120 模拟/数字转换器80, 120 Analog/Digital Converter
80C 输出端80C output
82、134 数字/模拟转换器82, 134 digital/analog converter
84、136 温度检测器84, 136 Temperature detector
90 存储器90 memory
100 专用集成电路、100 ASIC,
122 系统总线、124 内置式处理器、126 系统存储器122 system bus, 124 built-in processor, 126 system memory
132 缓存器132 registers
实施本发明的最佳方式Best Mode for Carrying Out the Invention
图3是根据本发明的可自行校准的晶体振荡器50的示意图。如图3所示,可自行校准的晶体振荡器50包含一振荡元件52、一电气连接于振荡元件52的集成电路60、一时钟信号垫62、一电源垫64、一接地垫66以及一控制垫68。振荡元件52可以是一温度补偿型振荡元件或一表面声波振荡元件。FIG. 3 is a schematic diagram of a self-calibrating
图4的根据本发明的集成电路60的功能方块图。如图4所示,集成电路60包含一相位比较器70、一电气连接于相位比较器70的输出端70C的模拟/数字转换器80以及一电气连接于模拟/数字转换器80的输出端80C的存储器90。时钟信号垫62是电气连接于相位比较器70的第一输入端70A,而振荡元件52是电气连接于相位比较器70的第二输入端70B。存储器90是一非易失性存储器。FIG. 4 is a functional block diagram of an
根据本发明的集成电路60还可包含一设置于相位比较器70的第一输入端70A与时钟信号垫62之间的第一开关72、一设置于振荡元件52与时钟信号垫62之间的第二开关74以及一用以控制第一开关72及第二开关74的逻辑控制元件76,其中第二开关74的数据流方向相反于第一开关72的数据流方向。逻辑控制元件76运作所需的工作时钟可由一内建时钟发生器(例如电阻电容时钟发生器)提供。集成电路60还可包含一电气连接电源垫64及逻辑控制元件76的高压检测器78。The
当晶体振荡器50在进行自行校准时,逻辑控制元件76关闭第二开关74并开启第一开关72。因此一测试平台可经由时钟信号垫62及第一开关72输入一参考时钟至相位比较器70的第一输入端70A。相位比较器70比较参考时钟与振荡元件52的时钟并产生一相位差信号(即频率误差信号),而模拟/数字转换器80则将该相位差信号转换成一数字信号(温度补偿数据)后由一升压电路(pumping circuit)储存于存储器90。When the
相应地,当晶体振荡器50欲输出一时钟信号时,逻辑控制元件76将关闭第一开关72并开启第二开关74。数字/模拟转换器82则根据储存于存储器90的温度补偿数据及来自温度检测器84的温度检测信号而输出一控制电压以校准该振荡元件52的时钟,因此振荡元件52的时钟经温度补偿后可经由第二开关74及时钟信号垫62稳定地输出。Correspondingly, when the
图5是根据本发明的晶体振荡器50的运作流程图。如图5所示,首先检查该电源电压是否高于一临界电压,其中该临界电压可设成例如120%的电源电压。若该电源电压低于该临界电压,则晶体振荡器50是处于正常运作模式并输出经温度补偿的时钟信号。若该电源电压是高于该临界电压,则检查环境温度是否为最后一个校准温度(一般而言,晶体振荡器需分别在低温、中温、高温三个温度区间进行校准)。若是最后一个校准温度,则终止校准程序。若不是最后一个校准温度,则启动振荡元件52并从时钟信号垫62输入一参考时钟。之后,相位比较器70比较该参考时钟与振荡元件52的时钟并产生一相位差信号(即频率误差信号)。模拟/数字转换器80接着将该频率误差信号转换成一数字信号,并经由一升压电路写入存储器90。之后,将振荡元件52关闭并进行下一个温度的校准。FIG. 5 is a flowchart of the operation of the
图6是根据本发明的晶体振荡器50的并联示意图。由于本发明的晶体振荡器50在接收到一高于电源电压120%的电压(即校准信号)后即可自行进行校准,因此可并联若干个晶体振荡器50的时钟信号垫(CLK)62、电源垫(VDD)64、接地垫(GND)66及控制垫(PDN)68后,再通过一测试平台由时钟信号垫62输入该参考时钟,并经由电源垫64输入该校准信号以激活逻辑控制元件76。之后,每一个晶体振荡器50的逻辑控制元件76即可自行控制并进行温度校准程序。也就是说,每一个晶体振荡器50是同时(平行地)进行温度校准。FIG. 6 is a schematic diagram of a parallel connection of a
图7是根据本发明的专用集成电路100的功能方块图。如图7所示,专用集成电路100包含一系统总线122、一电气连接于系统总线122的内置式处理器124、一电气连接于系统总线122的系统存储器126、一时钟信号垫102、一电气连接于时钟信号垫102的相位比较器110、一电气连接于相位比较器110的输出端110C的模拟/数字转换器120。模拟/数字转换器120也电气连接于系统总线122,以便将其输出经由系统总线122传送至系统存储器124。专用集成电路100还包含一设置于相位比较器110的第一输入端110A与时钟信号垫102之间的第一开关112,以及一设置于一外部振荡元件130与时钟信号垫102之间的第二开关114。FIG. 7 is a functional block diagram of an
专用集成电路100在进行外部振荡元件130的温度校准时,内置式处理器124经由系统总线122传送一控制指令以关闭第二开关114并开启第一开关112。因此一测试平台可经由时钟信号垫102及第一开关112输入一参考时钟至相位比较器110的第一输入端110A。相位比较器110比较该参考时钟与外部振荡元件130的时钟并产生一相位差信号(即频率误差信号),而模拟/数字转换器120则将该频率误差信号转换成一数字信号(温度补偿数据)后经由系统总线122而存储于系统存储器126。When the
相应地,当专用集成电路100欲输出一时钟信号时,内置式处理器124经由系统总线122传送一控制指令以关闭第一开关112且开启第二开关114,并将存储于系统存储器106的温度补偿数据加载于缓存器132。数字/模拟转换器134则根据储存于缓存器132的温度补偿数据和来自温度检测器136的温度检测信号,输出一控制电压以校准外部振荡元件130的时钟。因此外部振荡元件130的时钟经温度补偿后可经由第二开关114及时钟信号垫102稳定地输出。Correspondingly, when the
与现有技术相比较,由于根据本发明的晶体振荡器50在接收到校准信号后即可自行进行校准,因此在并联若干个晶体振荡器50后一测试平台可同时(平行地)进行温度校准。这样,测试平台所消耗的校准时间是由若干个晶体振荡器50均分的,从而降低每一个晶体振荡器50的校准时间以降低其测试成本。Compared with the prior art, since the
如上所述,已公开了本发明的技术内容及技术特点,然而本领域的技术人员仍可根据本发明的教示及公开而作种种不背离本发明精神的替换及修改。因此,本发明的保护范围应不限于实施例所揭示的内容,而应包括各种不背离本发明的替换及修改,并为本专利申请权利要求所涵盖。As mentioned above, the technical content and technical characteristics of the present invention have been disclosed, however, those skilled in the art can still make various replacements and modifications without departing from the spirit of the present invention according to the teaching and disclosure of the present invention. Therefore, the protection scope of the present invention should not be limited to the contents disclosed in the embodiments, but should include various replacements and modifications that do not deviate from the present invention, and are covered by the claims of this patent application.
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CN101399577B (en) * | 2007-09-28 | 2012-09-19 | 联芯科技有限公司 | Mobile communication terminal and crystal oscillator parameter calibrating method thereof |
CN105141295A (en) * | 2015-07-30 | 2015-12-09 | 灿芯半导体(上海)有限公司 | Self-calibration circuit of built-in clock |
CN113552794A (en) * | 2021-06-24 | 2021-10-26 | 南方电网科学研究院有限责任公司 | A kind of automatic calibration device and method of clock signal in power chip |
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CN101030777B (en) * | 2006-03-02 | 2010-12-08 | 中颖电子(上海)有限公司 | Apparatus and method for calibrating realtime clock source |
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US5406228A (en) * | 1994-07-12 | 1995-04-11 | General Instrument | Ring oscillator with frequency control loop |
FR2726705B1 (en) * | 1994-11-04 | 1996-12-20 | Asulab Sa | HIGH STABILITY FREQUENCY GENERATOR |
JPH0918234A (en) * | 1995-04-27 | 1997-01-17 | Seiko Epson Corp | Temperature compensated piezoelectric oscillator |
CN1166051C (en) * | 2001-08-09 | 2004-09-08 | 西安电子科技大学 | Analogue storage method and its temp. compensation crystal oscillator |
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Cited By (4)
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CN101399577B (en) * | 2007-09-28 | 2012-09-19 | 联芯科技有限公司 | Mobile communication terminal and crystal oscillator parameter calibrating method thereof |
CN105141295A (en) * | 2015-07-30 | 2015-12-09 | 灿芯半导体(上海)有限公司 | Self-calibration circuit of built-in clock |
CN105141295B (en) * | 2015-07-30 | 2017-10-10 | 灿芯半导体(上海)有限公司 | The self-calibration circuit of embedded clock |
CN113552794A (en) * | 2021-06-24 | 2021-10-26 | 南方电网科学研究院有限责任公司 | A kind of automatic calibration device and method of clock signal in power chip |
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