CN1610066A - Metallization method for producing integrated circuit copper interconnecting wire by separating bipolar acid chemical plating - Google Patents
Metallization method for producing integrated circuit copper interconnecting wire by separating bipolar acid chemical plating Download PDFInfo
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- CN1610066A CN1610066A CN 200410080014 CN200410080014A CN1610066A CN 1610066 A CN1610066 A CN 1610066A CN 200410080014 CN200410080014 CN 200410080014 CN 200410080014 A CN200410080014 A CN 200410080014A CN 1610066 A CN1610066 A CN 1610066A
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- copper
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- silicon substrate
- acid
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 50
- 239000010949 copper Substances 0.000 title claims abstract description 50
- 238000007747 plating Methods 0.000 title claims abstract description 47
- 239000002253 acid Substances 0.000 title claims abstract description 43
- 239000000126 substance Substances 0.000 title claims abstract description 40
- 238000001465 metallisation Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 40
- 239000003870 refractory metal Substances 0.000 claims abstract description 16
- 150000004767 nitrides Chemical class 0.000 claims abstract description 15
- 239000003292 glue Substances 0.000 claims abstract description 10
- 238000006479 redox reaction Methods 0.000 claims abstract description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 239000004332 silver Substances 0.000 claims abstract description 5
- 239000000243 solution Substances 0.000 claims description 55
- 239000010410 layer Substances 0.000 claims description 36
- 230000004888 barrier function Effects 0.000 claims description 32
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 20
- 239000008367 deionised water Substances 0.000 claims description 11
- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 6
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 150000001879 copper Chemical class 0.000 claims description 4
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 4
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 3
- 239000003929 acidic solution Substances 0.000 claims 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 5
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 abstract description 5
- 229940112669 cuprous oxide Drugs 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 239000010419 fine particle Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 25
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 10
- 229910001431 copper ion Inorganic materials 0.000 description 9
- 230000002378 acidificating effect Effects 0.000 description 8
- -1 fluorine ions Chemical class 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 6
- 230000003197 catalytic effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 206010070834 Sensitisation Diseases 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 230000008313 sensitization Effects 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- YXLXNENXOJSQEI-UHFFFAOYSA-L Oxine-copper Chemical compound [Cu+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 YXLXNENXOJSQEI-UHFFFAOYSA-L 0.000 description 2
- 238000007323 disproportionation reaction Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 238000012369 In process control Methods 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010965 in-process control Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The present invention relates to separated double electrode acid chemical plating process of preparing copper interconnection in integrated circuit, and belongs to the field of chemical plating application. The process adopts one silicon substrate as cathode, and one silicon substrate with coated refractory metal or its nitride on one side and the other parts coated with silver glue or organic glue to prevent corrosion in the chemical plating as anode, and the separated cathode and anode are set in acid solution to produce oxidation-reduction reaction, so as to plate one layer of copper film directly on the silicon substrate with refractory metal or its nitride. Thus produced copper film has homogeneous and fine particles, powerful combination with substrate, preferable (1, 1, 1) crystal particle orientation, and no cuprous oxide. The process may be used to replace alkaline and single electrode acid chemical copper plating process.
Description
Technical Field
The invention belongs to the field of chemical plating application, and particularly relates to a novel separated double-electrode acidic chemical plating method which is mainly applied to an interconnection line metallization process of an integrated circuit.
Background
In an integrated circuit, a thin metal film is deposited on a silicon substrate of the integrated circuit, and metal wires are formed by photolithography to connect separated elements isolated from each other as required to form a desired circuit, and such metal wires are called integrated circuit interconnection lines. The process of depositing a metal film on an integrated circuit silicon substrate is referred to as a metallization process.
With the advent of very large scale integrated circuits, aluminum and aluminum alloys have poor electromigration resistance due to high resistivity, and the deposition of aluminum and aluminum alloy films on integrated circuit silicon substrates has no longer been compatible with the requirements of very large scale integrated circuits. Because copper has the advantages of low resistivity, high electromigration resistance, high stress damage resistance, high thermal conductivity coefficient and the like, the copper replaces aluminum to become a new generation of interconnection line material. However, since copper is very easy to diffuse in the silicon substrate, which causes the silicon substrate to fail, a layer of refractory metal such as Ta, Ti, W, etc. or nitride thereof is introduced between the copper metal thin film and the silicon substrate in the copper metallization process as a barrier layer for preventing copper from diffusing into the silicon substrate. Therefore, in the metallization process of copper interconnection lines, the copper film is plated on the barrier layer made of refractory metal such as Ta, Ti, W, etc. or its nitride.
The copper metal film can be prepared by physical vapor deposition, chemical vapor deposition and electrochemical deposition. Electroless plating is one of electrochemical deposition, and is a promising copper interconnection line preparation technology due to its good characteristics of simple preparation, excellent film properties, good step coverage capability and low cost.
Conventional electroless copper plating utilizes the redox reaction of a solution to reduce copper ions on the deposition surface under alkaline conditions. Copper salt in the solution provides copper ions, formaldehyde is used as a reducing agent, tetramethylammonium hydroxide is used as a pH value regulator, and EDTA and the copper ions form a complex compound to improve the stability of the solution. Meanwhile, a surfactant and a leveling agent are added into the solution to improve the quality of the plated copper film. However, since barrier layers of refractory metals such as Ta, Ti, W, etc. or nitrides thereof do not have catalytic activity against copper ions, and copper ions cannot be directly deposited on the surfaces thereof, catalytic sensitization of the deposition surfaces is required before electroless plating. The main catalytic sensitization process today is catalyzed by Pd atoms: pd ions are reduced into Pd atoms in an acid solution, and Pd atomic groups are pinned on the deposition surface by utilizing the etching effect of the acid solution on refractory metals, wherein the Pd atomic groups are the deposition backrest of copper ions. The alkaline chemical plating method has various process steps and great difficulty in process control, and simultaneously, because Pd belongs to noble metal, the production cost is increased.
Nowadays, studies on direct electroless copper plating on barrier layers are being conducted in taiwan, japan and the like. The taiwan designof the acid electroless copper plating process has been the more successful example. Since both the oxidation reaction of the cathode and the reduction reaction of the anode are performed on one substrate in this acid copper plating method, it is called a single-electrode acid electroless plating method.
The method comprises the following steps: placing a silicon substrate with one surface plated with a refractory metal nitride barrier layer into an acid solution consisting of copper chloride and hydrofluoric acid for reaction, wherein the hydrofluoric acid oxidizes the exposed silicon surface of the silicon substrate, and the reaction formula is as follows:
the released electrons are transported to the surface of the barrier layer by fluorine ions and chlorine ions, are reduced into copper by copper ions and are deposited on the surface of the barrier layer, and direct chemical plating is realized, wherein the reaction formula is as follows:
Disclosure of Invention
The invention aims to provide a metallization method for preparing an integrated circuit copper interconnection wire by separating double-electrode acid chemical plating. The copper film prepared by the method has the advantages of fine anduniform crystal grains, strong bonding force with the barrier layer and the like, and is a powerful alternative scheme of the alkaline chemical plating and single-electrode acidic chemical plating methods.
The invention provides a metallization method for preparing integrated circuit copper interconnection wires by separating double-electrode acid chemical plating, which is characterized in that a silicon substrate is used as a cathode, a silicon substrate plated with refractory metal or nitride thereof is used as an anode, and a silver glue or organic glue protective layer is coated on the exposed silicon surface of the anode substrate to prevent the anode substrate from being corroded in the chemical plating process; and separating the cathode and the anode in an acid solution, carrying out oxidation-reduction reaction on the cathode and the anode in the acid solution, and directly and chemically plating a copper film on a silicon substrate made of refractory metal and nitride.
The invention has the characteristics and effects that:
the chemical plating method of the invention is characterized in that the anode and the cathode are separated under open circuit. The fluorine ions in the solution oxidize the silicon substrate serving as a cathode under an acidic condition, electrons released by oxidation are combined with the fluorine ions to form complex ions, and the complex ions are diffused and transmitted to an anode in the solution; the silicon surface of the anode substrate except the barrier layer formed by refractory metal or nitride thereof is protected by silver glue or organic glue, thereby ensuring that the silicon substrate cannot lose efficacy due to corrosion. Copper ions receive electrons transported by fluorine ions on the surface of the barrier layer of the anode and are directly deposited on the surface of the barrier layer.
The fluoride ions and the nitrate ions contained in the acidic chemical plating solution have the effects of cleaning and etching refractory metals and nitrides thereof, on one hand, an oxide layer on the surface of a precipitate is removed, the effect of catalytic sensitization is achieved, and the premise is created for direct chemical plating of copper ions; on the other hand, the etching effect of fluorine ions on the precipitation substrate increases the backrest of copper ion deposition, and improves the binding force of the copper film and the precipitation substrate.
And because the two electrodes are separately arranged, the distance between the two electrodes can be changed along with the configuration of the solution and the reaction temperature. When the distance between the cathode and the anode is changed between 0mm and 5mm, the particle size, shape, copper film covering capacity and the bonding force between the copper film and the barrier layer of the deposited copper film are correspondingly changed. The cathode can also be placed opposite to the surface of the barrier layer, the prepared copper film is also related to the distance between the two electrodes, and the copper film prepared when the cathode and the barrier layer are placed opposite to each other is also different in particle size, shape, coverage rate and binding force.
The copper film plated by the separated double-electrode acidic chemical plating method has fine and uniform crystal particles and better bonding force with a substrate, and a solid silicon electrode needs to be introduced in an oxidation-reduction reaction, so that the stability of the solution is better than that of an alkaline solution, and the solution cannot lose efficacy due to the disproportionation reaction. Meanwhile, the copper film plated by the method has (111) preferred orientation, and can meet the requirement of the integrated circuit on the grain orientation of the copper metal layer. And the formation of cuprous oxide is suppressed since the redox reaction takes place on two separate electrodes. The copper film prepared by the separated double-electrode acidic chemical plating method is subjected to substance analysis by adopting an X-ray analysis method, and cuprous oxide is not found on the plated copper film. In alkaline chemical plating, cuprous oxide is easily formed on the surface of the plated copper film due to disproportionation reaction, the resistivity of the copper film is increased, and the problem can be successfully solved by adopting the copper film prepared by the method. Therefore, the method for preparing the integrated circuit copper interconnection line by separating the double-electrode acidic chemical plating realizes the direct chemical plating on the refractory metal and the nitride thereof, the prepared copper film has fine and uniform particles, good binding force and preferred (111) crystal grain orientation, and the generation of cuprous oxide is effectively inhibited; the components and the preparation process of the solution are simple and easy to implement, and the cost is low.
The chemical plating method of the invention can be directly applied to the preparation of copper interconnection lines in deep submicron integrated circuits of integrated circuits, can also be used in the early stage catalytic sensitization step of alkaline chemical plating, or the preparation of electroplated copper seed crystal layers.
Detailed Description
The invention discloses a metallization method for preparing integrated circuit copper interconnection lines by separating double-electrode acidic chemical plating, which comprises the steps of taking a silicon substrate as a cathode, taking the silicon substrate plated with refractory metal or nitride thereof on one surface as an anode, and wrapping a silver glue or organic glue protective layer on the exposed silicon surface of the anode substrate to prevent the anode substrate from being corroded in the chemical plating process; and separating the cathode and the anode in an acid solution, carrying out oxidation-reduction reaction on the cathode and the anode in the acid solution, and directly and chemically plating a copper film on a silicon substrate made of refractory metal and nitride.
The chemical plating solution adopted by the invention can be prepared by adding at least one of 0.1-1 mol/l copper salt, 0-16 g/l ammonium fluoride and 0-20 wt% hydrofluoric acid dropwise, and adjusting the pH value of the solution to 0.1-5.
When the cathode of the silicon substrate is arranged opposite to the surface of the anode barrier layer, the distance between the cathode and the anode barrier layer can be 0-5 mm; when the silicon substrate cathode is disposed on the back side of the anode barrier layer, the distance between the anode barrier layer and the silicon substrate cathode can be 0-5 mm.
The examples of the invention are as follows:
the first embodiment is as follows:
the acid solution is 1mol/l copper sulfate and 20 wt% hydrofluoric acid, and nitric acid and deionized water are added dropwise to adjust the pH value of the solution to 0.2. The cathode of the silicon substrate is arranged opposite to the surface of the barrier layer of the anode, the distance is 5mm, and the temperature of the acid solution is 50 ℃ during chemical plating.
Example two:
0.45mol/l of copper nitrate and 10 wt% of hydrofluoric acid in the acid solution, adding deionized water to adjust the pH of the solution to 5, placing the cathode of the silicon substrate opposite to the surface of the barrier layer of the anode at a distance of 0mm, and controlling the temperature of the acid solution to be 70 ℃ during chemical plating.
Example three:
the acid solution is 0.45mol/l copper sulfate and 8 wt% hydrofluoric acid, deionized water is added to adjust the pH value of the solution to 3, the cathode of the silicon substrate is placed opposite to the surface of the barrier layer of the anode at a distance of 1mm, and the temperature of the acid solution is 50 ℃ during chemical plating.
Example four:
the acid solution is 0.45mol/l of copper nitrate and 8 wt% of hydrogen fluoride, deionized water is added to adjust the pH value of the solution to 1, the distance between the cathode of the silicon substrate and the surface of the barrier layer of the anode is 0.5mm, and the temperature of the acid solution is 50 ℃ during chemical plating.
Example five:
the acid solution is 0.30mol/l of copper chloride and 16g/l of ammonium fluoride, hydrochloric acid and deionized water are dripped to adjust the pH value of the solution to 0.1, the cathode of the silicon substrate is placed at a distance of 5mm opposite to the surface of the barrier layer of the anode, and the temperature of the acid solution is 80 ℃ during chemical plating.
Example six:
the acid solution is 0.1mol/l of copper nitrate, 4 wt% of hydrogen fluoride and 2g/l of ammonium fluoride, nitric acid and deionized water are dripped to adjust the pH value of the solution to 2, the cathode of the silicon substrate is placed opposite to the surface of the barrier layer of the anode at a distance of 2mm, and the temperature of the acid solution is 40 ℃ during chemical plating.
Example seven:
0.1mol/l copper sulfate and 5 wt% hydrogen fluoride in acid solution, dropwise adding sulfuric acid and deionized water to adjust the pH value of the solution to about 1, placing the cathode of the silicon substrate opposite to the surface of the barrier layer of the anode at a distance of 0mm, and controlling the temperature of the acid solution to be 60 ℃ during chemical plating.
Example eight:
the acid solution is 0.5mol/l copper sulfate, 10 wt% hydrogen fluoride and 6g/l ammonium fluoride, nitric acid and deionized water are dripped to adjust the pH value of the solution to 1, the cathode of the silicon substrate is placed opposite to the surface of the barrier layer of the anode at a distance of 2mm, and the temperature of the acid solution is 65 ℃ during chemical plating.
Example nine:
the acid solution is 0.45mol/l of copper chloride, 4 wt% of hydrogen fluoride and 10g/l of ammonium fluoride, nitric acid and deionized water are dripped to adjust the pH value of the solution to 2, the cathode of the silicon substrate is placed opposite to the surface of the barrier layer of the anode at a distance of 2mm, and the temperature of the acid solution is 55 ℃ during chemical plating.
Example ten:
the acid solution is 0.40mol/l copper sulfate, 8 wt% hydrogen fluoride and 3g/l ammonium fluoride, nitric acid and deionized water are dripped to adjust the pH value of the solution to 1, the cathode of the silicon substrate is arranged opposite to the surface of the barrier layer of the anode at a distance of 1mm, and the temperature of the acid solution is 60 ℃ during chemical plating.
Claims (5)
1. A metallization method for preparing integrated circuit copper interconnection wires by separating double-electrode acid chemical plating is characterized in that a silicon substrate is used as a cathode, a silicon substrate plated with refractory metal or nitride thereof on one surface is used as an anode, and a silver glue or organic glue protective layer is coated on the exposed silicon surface of the anode substrate; and separating the cathode and the anode in an acid solution, carrying out oxidation-reduction reaction on the cathode and the anode in the acid solution, and directly and chemically plating a copper film on a silicon substrate made of refractory metal and nitride.
2. The method of claim 1, wherein the acidic solution is prepared by adding 0.1-1 mol/l copper salt, 0-16 g/l ammonium fluoride and 0-20 wt% hydrofluoric acid, and adding dropwise acid and deionized water to adjust the pH of the solution to 0.1-5.
3. The method of claim 1, wherein the copper salt is selected from the group consisting of copper sulfate, copper nitrate, and copper chloride, and the acid used to adjust the pH of the solution is selected from the group consisting of nitric acid, sulfuric acid, and hydrochloric acid.
4. The method according to claim 1, wherein the distance between the cathode and the anode is kept in the range of 0 to 5 mm.
5. The method of claim 1, wherein the silicon substrate cathode is positioned opposite the barrier layer surface of the anode or the silicon substrate cathode is positioned opposite the barrier layer surface of the anode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410080014 CN1290160C (en) | 2004-09-24 | 2004-09-24 | Metallization method for producing integrated circuit copper interconnecting wire by separating bipolar acid chemical plating |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410080014 CN1290160C (en) | 2004-09-24 | 2004-09-24 | Metallization method for producing integrated circuit copper interconnecting wire by separating bipolar acid chemical plating |
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| Publication Number | Publication Date |
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| CN1610066A true CN1610066A (en) | 2005-04-27 |
| CN1290160C CN1290160C (en) | 2006-12-13 |
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| CN 200410080014 Expired - Fee Related CN1290160C (en) | 2004-09-24 | 2004-09-24 | Metallization method for producing integrated circuit copper interconnecting wire by separating bipolar acid chemical plating |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102124551A (en) * | 2008-08-18 | 2011-07-13 | 诺发系统有限公司 | Process for through silicon via filling |
| CN105308723A (en) * | 2013-06-17 | 2016-02-03 | 应用材料公司 | Method for copper plating through silicon vias using wet wafer back contact |
| CN108886003A (en) * | 2016-03-31 | 2018-11-23 | 株式会社荏原制作所 | The manufacturing method and substrate of substrate |
| US10472730B2 (en) | 2009-10-12 | 2019-11-12 | Novellus Systems, Inc. | Electrolyte concentration control system for high rate electroplating |
| US10692735B2 (en) | 2017-07-28 | 2020-06-23 | Lam Research Corporation | Electro-oxidative metal removal in through mask interconnect fabrication |
-
2004
- 2004-09-24 CN CN 200410080014 patent/CN1290160C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102124551A (en) * | 2008-08-18 | 2011-07-13 | 诺发系统有限公司 | Process for through silicon via filling |
| CN105845558A (en) * | 2008-08-18 | 2016-08-10 | 诺发系统有限公司 | Process for filling through silicon vias |
| US10472730B2 (en) | 2009-10-12 | 2019-11-12 | Novellus Systems, Inc. | Electrolyte concentration control system for high rate electroplating |
| CN105308723A (en) * | 2013-06-17 | 2016-02-03 | 应用材料公司 | Method for copper plating through silicon vias using wet wafer back contact |
| CN105308723B (en) * | 2013-06-17 | 2019-01-01 | 应用材料公司 | The method for carrying out copper plating silicon perforation is contacted using wet type back surface of the wafer |
| US10879116B2 (en) | 2013-06-17 | 2020-12-29 | Applied Materials, Inc. | Method for copper plating through silicon vias using wet wafer back contact |
| CN108886003A (en) * | 2016-03-31 | 2018-11-23 | 株式会社荏原制作所 | The manufacturing method and substrate of substrate |
| CN108886003B (en) * | 2016-03-31 | 2022-09-20 | 株式会社荏原制作所 | Method for manufacturing substrate |
| US10692735B2 (en) | 2017-07-28 | 2020-06-23 | Lam Research Corporation | Electro-oxidative metal removal in through mask interconnect fabrication |
| US11610782B2 (en) | 2017-07-28 | 2023-03-21 | Lam Research Corporation | Electro-oxidative metal removal in through mask interconnect fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1290160C (en) | 2006-12-13 |
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