CN1605104A - Apparatus and methods for nondestructive data storage and retrieval - Google Patents
Apparatus and methods for nondestructive data storage and retrieval Download PDFInfo
- Publication number
- CN1605104A CN1605104A CNA028249313A CN02824931A CN1605104A CN 1605104 A CN1605104 A CN 1605104A CN A028249313 A CNA028249313 A CN A028249313A CN 02824931 A CN02824931 A CN 02824931A CN 1605104 A CN1605104 A CN 1605104A
- Authority
- CN
- China
- Prior art keywords
- electrode
- storage unit
- ferroelectrics
- group
- electret
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
Abstract
In a data storage apparatus comprising means for storing and retrieving data in respective write and read operations, and first and second set of addressing electrodes are provided, the latter set having electrodes that preferably are oriented orthogonally to the electrodes of the first set, and the electrodes (b, c) of the second set are provided as parallel twin electrodes located in parallel recesses or trenches (3) in the electrodes of the first set. The trenches compris a soft ferroelectric or electret memory material with piezoelectric properties such that memory cells (1) with two subcells (alpha1, alpha2) are formed in the trench (3) respectively between the electrodes (a) of the first set and the parallel twin electrodes (b, c) on either side of the latter. In a write operation data are encoded in the memory cells (1) by means of an applied voltage potential over the subcells (alpha1, alpha2). In a non-destructive readout operation of data encoded and stored in the memory cells (1) in this manner, the piezoelectric properties of the memory material (2) is employed for eliciting response signals from the subcells (alpha1, alpha2) of a memory cell (1) when the former are subjected to mechanical stresses in the lateral direction, such that the logical value stored in the memory cell (1) can be determined.
Description
Technical field
The present invention relates to a kind of data storage device, it has the device that is used in each write and read operation storage and restore data, wherein data with the non-volatile storage of similar polarized state in ferroelectrics or electret (electret) storage unit, wherein said storage unit is that the mode with the addressable passive matrix array provides, wherein operate for write and read, can carry out independently electrical addressing to described storage unit, the addressing of described storage unit is to take place by separately the crossed electrode of the first and second electrode groups, and wherein each electrode group is made up of parallel strip electrode and is made the electrode of this first electrode group be positioned basically perpendicular to the electrode of the second electrode group; Also relating to a kind of being used for carries out the method that non-destructive reads at device according to claim 1; And a kind of being used at device according to claim 1 the piezoelectricity storage unit that is used for write operation to carrying out the method for poling (poling).
Background technology
Memory device based on ferroelectrics or electret polymeric material has many advantages, for example little unit footprint (footprint), accumulation layer pile up, be suitable for roll type production (reel-to-reel production)/based on the ink-jet of producing, sub zero treatment, low-cost or the like.Typically, read out reading of data from described storer by so-called destruction, that wherein polarizes in the read operation process oppositely makes it will be used for further canned data retrography to storer.The destructive read mode of this kind is not expected for many application; For example, be double about the fatigue period number that reads.A problem may appear again in the latter, because the write cycle time that can only stand limited quantity based on the ferroelectrics or the electret of storer.In addition, must change polymer film and mean that power consumption has increased for twice, this allows the place of complicacy of the required circuit of this retrography just.
It itself is a very slow process (typically from the hundreds of nanosecond to some microseconds, decide on application) that destruction is read.This means that the polymer memory that reads by destruction is not suitable for a plurality of main application, for example replaces speed buffering SRAM storer.At last, when the size of unit reduced, the signal intensity that reduces made it be difficult to realize polymer memory under the technical design state, perhaps be difficult to be used in ultra dense imprint lithography (＜0.15um) in.
Known many ferroelectricss and electret comprise that known PVDF (polyvinylidene fluoride) and copolymerization PVDF-TrFE (poly-(vinylidene fluoride-trifluoro-ethylene) ester) (poly (vinylidenedifluoride-trifluoroethylene)) have piezoelectric property.Associated can be referring to Sessler and Gerhard-Multhaupt (editor) Electrets, volume 1 and volume 2, the 5,8,11 and 12 chapters (the 3rd edition, Laplacian publishing house (1998)).
In having European patent application EP-A2-0166938 (Eiling etc.) that priority date is on June 1st, 1984, disclosed the write and read method that data storage device a kind of and based on the ferroelectric polymer memory layer combines, its objective is and improve storage density and reduce the access time.For this purpose, data are stored in the storage unit, and described storage unit forms by single domain in polymeric memory material of polymer.By an electric field that applies permanent polarization is carried out in these territories, and according to the direction of this electric field, just the plus or minus polarization in the memory layer is encoded, these territories are encoded.In order to read this data, this application discloses the thermoelectricity of polarizing field or the application of piezoelectricity activation.Observe this activation and find that it takes place by suitable arranged electrode means in the addressable matrices memory cell array of ferroelectrics storage medium, preferably for example poly-(vinylidene fluoride-trifluoro-ethylene) ester (poly (vinylidene difluoride-trifluoroethylene)) of described ferroelectrics storage medium (PVDF-TeFE), thereby utilize the thermocurrent pulse that applies respectively or can thermoelectricity or piezoelectric excitation take place to storage unit by the voltage that applies.
Utilize addressable matrices, the write and read method that discloses according to EP-A2-0168938 also will allow parallel Writing/Reading.Stated that an accessible storage density is 10
8Bit/square centimeter.Point out that also the access time of reading for thermoelectricity will be 10
-9On the grade of second.But do not point out to be used for the accessible access time of reading based on piezoelectric effect.In addition, in this application, do not point out accessible small signal region performance about access speed, applied voltage grade, frequency, detecting reliability and immunity to interference yet.Yet, can use at small signal region since predict the nondestructive reading method that is used for based on the storer of ferroelectric polymers, so major concern be obtainable especially letter/make an uproar than and detection level.
Summary of the invention
Therefore a fundamental purpose of the present invention provides the non-destructive read operation is carried out in a kind of permission based on piezoelectric effect data storage device, and described piezoelectric effect can obtain in ferroelectrics or electret memory material.
Another fundamental purpose of the present invention be compared with prior art provide a kind of based on piezoelectric effect and letter that have significant improvement/make an uproar than the reading method of non-destructive very fast.
Above-mentioned purpose and further feature and advantage obtain by data storage device according to the present invention, described device is characterised in that first group of electrode comprises a plurality of parallel grooves, its with perpendicular to the direction horizontal-extending of described electrode and from its top surface extend vertically downward one less than the distance of thickness of fast electrode have a profile that is essentially rectangle simultaneously, at least one ferroelectrics or electret memory material are provided in the described groove and cover its sidewall, described second group of electrode is provided as a pair of group electrode, each all comprises and is provided at parallel double electrode in the described groove and parallel with it and that not be not in contact with one another with described first group of electrode, described ferroelectric material is provided at least a portion of the volume that is not captured by described electrode of described groove, described ferroelectrics or electret are soft or flexible ferroelectrics or the electret with piezoelectric property, and in addition also between the electrode of second group electrode and first group, provide electrical isolation, thereby produced piezoelectric effect therein thereby can transversal displacement take place in soft ferroelectrics with piezoelectric property or electret at second group bipolar electrode under the effect of the power that suitably applies, and described soft ferroelectrics with piezoelectric property in the volume between the electrode of second group bipolar electrode and first group or electret form storage unit in described groove subelement, described subelement for write operation by between the crossed electrode of each bipolar electrode and first group, applying an electric field and can be by poling (poled), in two or more logical values that storage exists with one group of polarized state form in described subelement thereby storage unit is polarized at least one, and by applying a voltage potential between in the adjacent electrode of at least one and the described first electrode group between described bipolar electrode and/or in the described latter at least one and can carry out nondestructive read to it and get, ferroelectrics by bearing the elongation and/or the subelement of compression stress or electret utilize the stress that the piezoelectric effect response responds to thus and can the parameter that obtain from its polarized state be detected in described subelement, thereby can find the logic state of the subelement of storage unit, and the logical value that is stored in the storage unit that is contained in the unit can be determined.
Above-mentioned purpose and further feature and advantage also can obtain by a kind of method, the method is characterized in that by the subelement that makes described selection be used for the storage unit of read operation and bear tension force and/or pressure and detect the voltage that produces by the piezoelectricity mode simultaneously or the phase place of electric current and/or polarity and/or amplitude are carried out reading of data that described voltage or electric current are to produce by using the stress that described tension force and/or pressure produces by described subelement response.
At last, above-mentioned purpose and further feature and advantage obtain by a kind of method, this method is used at device according to the present invention the piezoelectricity storage unit that is used for write/read operation carrying out poling (poling), and described poling method is characterised in that: to carry out poling about each unit to described cell pairs in two the one-tenth extreme direction of bipolar electrode vertical orientation, described bipolar electrode is relative with each unit of described cell pairs, thereby becomes all four kinds possible being arranged in two right unit of described unit of extreme direction to be implemented.
Further feature and advantage of the present invention will be conspicuous by accompanying dependent claims.
To illustrate in further detail the present invention according to various preferred exemplary embodiments and with reference to accompanying drawing now, wherein:
Description of drawings
Fig. 1 a and 1b represent respectively according to the planimetric map of the part of the memory cell array in the device of first preferred embodiment of the invention and its sectional view along the intercepting of the line A-A among Fig. 1 a;
Fig. 2 a and 2b represent the signal distortion corresponding to the embodiment among Fig. 1 a and the 1b;
The expression of Fig. 3 signal is according to the planimetric map of first source arranged of the preferred embodiment among Fig. 1;
Fig. 4 a-d is illustrated in according to the step of carrying out poling sequence in the write operation process on the part of the storage array in the device of the present invention;
Fig. 5 a, c and 5b, d represents that respectively the principle of read operation is carried out in its explanation that is used for illustrating at the embodiment of device according to the present invention and the method according to this invention according to the planimetric map of device of the present invention with along the sectional view of the line A-A among Fig. 5 a and 5b intercepting;
Fig. 6 a and 6b represent respectively according to the planimetric map of the part of the device of second preferred embodiment of the invention and the sectional view that obtains along the A-A line among Fig. 6 a intercepting;
Fig. 7 a-7d represents the storage unit that is used for write operation among the device embodiment shown in Fig. 6 a and the 6b is carried out the process of poling, and Fig. 7 a and 7c are planimetric map, and Fig. 7 C and 7d are respectively its corresponding arranged;
Fig. 8 a, c and 8b, d represents the planimetric map of data read method and its sectional view along the line A-A intercepting of Fig. 8 a and 8c respectively, and it is used for the embodiment that illustrates at Fig. 6 a according to the present invention and 6b and carries out the method that data are read based on the poling sequence shown in Fig. 7 a-d.
Embodiment
With schematic illustration general background of the present invention, will make discussion easier to understand to each preferred embodiment thereafter now according to apparatus and method of the present invention.
Basically, by utilizing piezoelectric effect in ferroelectrics or the electret so that each storage unit is produced driving force, and detection polarized state (logic state)-by the piezoelectric voltage response of those unit decisions, the present invention allows the nondestructive information content of reading in ferroelectrics or the electret storage unit.General structure is narrated, thus can be in the passive matrix addressable array of first source intensive layout piezoelectric actuator and storage unit.These structures comprise that ferroelectrics or electret are laterally, just be parallel to the polarization of support substrate and in conjunction with micro mechanical structure, such structure is a resonance or non-resonant, and its layer stack with the multi-memory structure is consistent, so that high volumetric data storage densities to be provided.
Now each preferred embodiment will be discussed.The purpose that should be appreciated that accompanying drawing is to illustrate necessity and the basic layout of the structure division of device of the present invention, and the General Principle that is used for the method for reading of data of the present invention.In addition, for the purpose of simplifying, storage material is known as ferroelectrics hereinafter, although it can also be an electret.-in fact ferroelectric material can be regarded as the subclass of electret fully.
Fig. 1 a represents the planimetric map of the part of memory cell array in accordance with a preferred embodiment of the present invention, and Fig. 1 b represents the sectional view of its A-A intercepting along the line.The profile by sewing up of the position summary of single storage unit 1 is represented.Electrod-array a
n, a
N+1, a
N+2..., cross over a bipolar electrode group b
mAnd c
m, this pair group electrode be embedded in insulation, mechanically for soft and in the flexible material 2, material 2 is filled in electrode a
nThe middle groove 3 that forms is as the best finding out from Fig. 1 b.Material 2 in the groove 3 is ferroelectric polymers preferably, and it surpasses in intensity can poling in the electric field of its coercive field.In case poling, ferroelectric polymers keep its polarization, its direction and intensity are represented by the intersection shown in Fig. 1 a part, the logical value in the formed non-volatile memory cell structure of intercalation electrode matrix.At electrode a
nWith bipolar electrode group b
mAnd c
mBetween each infall, can be to three piezoelectric actuated subelements of storage unit 1 definition, in Fig. 1 b by α
N1, α
N2And β
nExpression.Subcells
N1And α
N2Corresponding to working as at public electrode a
nWith electrode b
mAnd c
mBetween suffer the volume of the ferroelectric polymers of highfield when applying voltage respectively.When these subelements hour, unit β
nCorresponding to electrode b
mAnd c
mBetween the elongation volume of ferroelectric polymers, as two electrode b in the back
mAnd c
mBetween when applying voltage, described elongation volume suffers highfield.Poling makes ferroelectric polymers can carry out piezoelectric response, and this makes bipolar electrode b in the structure shown in Fig. 1 a, the 1b
mAnd c
mHorizontal (just at electrode a in groove 3
nDirection on) move, move butt really and become extreme direction and subcells in the ferroelectric material 2 to depending on amplitude
N1, α
N2, and β
nIn the direction and the intensity of electric field.
The planimetric map of the distortion of the basic design among Fig. 2 a presentation graphs 1a and the 1b, wherein the bottom of groove 3 is filled and is different from subcells
N1, α
N2, and β
nThe propping material 4 of inner ferroelectric material 2.This can be from favourable the finding out of Fig. 2 b, and Fig. 2 b illustrates along the sectional view of the intercepting of the A-A line among Fig. 2 a.Storage unit 1 was as before having been represented by the profile of sewing up.By the propping material 4 of the suitable bottom that is chosen in groove 3, electrode b
mAnd c
mMechanical response can be used for given application with being optimized.It needs not be ferroelectric or piezoelectricity, and can select from the material of wide region.Therefore, it can be soft with flexible, with at electrode b
mAnd c
mTransverse movement in little restriction is provided.In some cases, its machinery dissipation characteristic can be selected to influence electrode b
m, c
mMechanical motion character.An example like this is for reconciling energy loss with in subcells
N1, α
N2, β
nThe resonant excitation process in obtain the mechanical q-value of expectation.In order to obtain specific mechanical property, primer 4 can or cannot with subcells
N1, α
N2, and β
nCovering ferroelectric material 2 and/or electrode b
m, c
mIn conjunction with.
Fig. 3 signal expression cross-point passive matrix arrangement according to one preferred embodiment of the present invention is shown.Have only electrode lay-out to be illustrated.Corresponding to a storage unit 1 shown in Fig. 1 b and Fig. 2 b shown in the profile of sewing up.This addressing structure is different from traditional first source matrix addressing scheme of prior art, because " vertically " electrode is parallel bipolar electrode b now
mAnd c
m(1≤m≤M), wherein M is that storage unit 1 is along each electrode a
n(quantity of 1≤n≤N), wherein N is that storage unit 1 is along each vertical electrode group b
n, c
mQuantity.Clearly, by suitable ferroelectric material 2 polings that make in the storage unit of each place, point of crossing definition, data can be stored in the M * place, N point of crossing in the matrix.According to the present invention, the Data-carrying subelement of storage unit 1 is α
N1And α
N2Type, and the subelement β of macroscopic view
nBe used to read the data (referring to following) of storage.From Fig. 1 b and 2b as can be seen, subcells
N1And α
N2All made polarization point to bipolar electrode b from the sidewall of groove 3 by poling
mOr c
mIn one or in the opposite direction.This combination and permission that will provide four different polings to arrange changes subcells in principle
N1, α
N2On polarised direction.Yet, when the passive matrix addressing structure is used for ferroelectrics to the matrix point of crossing and carries out poling, the known voltage that imposes on cross spider in poling (writing) process that must carefully be chosen in each storage unit in the unipolar addressable matrices all having of prior art in level and vertical direction is to avoid interference the non-selected cell at other place, point of crossing in the matrix.Relevant therewith can reference, for example No. the 20003508th, Norwegian patent applications, and the list of references that comprises.One shows than recent studies on and can make the minimum interference of non-selected cell by coordinate applied voltage on all matrix electrodes.A solution is shown in Figure 3, and its maximal value that non-selected cell is born is 1/3 of voltage Vp, and Vp is used for during write cycle selected cell being carried out poling.
Fig. 4 a-4d represents to be used for the part of the storage matrix that comprises five storage unit 1 is encouraged the first step of the poling sequence of (activation) and write operation, described each storage unit occupy one with the corresponding position of storage unit shown in Fig. 1 a or Fig. 2 a, but do not illustrate especially at this.At first, subelement β
nMade it in data readout subsequently, be used as exciter units (referring to following) by poling.Shown in Fig. 4 a, this can pass through at electrode b
mAnd c
mBetween apply voltage Vp and obtain.Select this voltage to surpass the electric field of coercive field, thereby make ferroelectrics polarize on the direction shown in the arrow in the drawings with generation in ferroelectrics.All crossed electrode a
n... be illustrated and remain on the Vp/2 place, thereby because the strong non-linear hysteresis characteristic of ferroelectric has caused very little polarization response in all subcells or do not have polarization response to produce.Can select this voltage with diverse ways, perhaps can allow electrode a
n... float, because in the write operation process, will set subsequently to the polarized state in the subcells.Fig. 4 b represents electrode a
nOn subcells
N1, α
N2How poling is encoded to polarized state to be used for write operation, and in this case, described logic state is used expression one bit information, for example, and logical one.As can be seen, the voltage that applies make the polarization symmetry from bipolar electrode b
m, c
mBe outwardly directed to the sidewall of groove 3, and keep below Vp/3, just be lower than the polarization conversion threshold value along the voltage on all other subcells of described bipolar electrode.Fig. 4 c represents electrode a
N+1On the cataloged procedure of logic state " 0 ".As can be seen, with electrode a
nSituation compare, for electrode a
N+1Unit α
N1And α
N2In polarization be reversed.The voltage that imposes on the electrode in the matrix in this case is arranged among Fig. 4 c and illustrates partly, and whole matrix as shown in Figure 3.In Fig. 3, also show and be used for a that represents by the circle of sewing up
N+1, (b
m, c
m) locate " 1 " bit is written to voltage setting (in the parenthesis) in the storage unit 1.In a similar fashion matrix is further write, shown in Fig. 4 d.Note by aforesaid change unit α
N1And α
N2In polarised direction, many bits of encoded obviously are possible, at this and not enabled.Up-to-date studying in great detail shows that this will make b
m, c
mBetween voltage shown in the write cycle time process in surpass Vp/3.Yet,, other preferred embodiment of the present invention will be discussed below with this viewpoint.
How Fig. 5 a-5d represents sense data from matrix.Fig. 5 a and 5c are illustrated in the planimetric map of the storage matrix in two different moment, and Fig. 5 b and 5d represent each sectional view of its A-A intercepting along the line.The apparent position of storage unit 1 such as precedingly represent by the profile of sewing up.Bipolar electrode b
mAnd c
mAs exciter units, it makes along the subcells of all electrodes of bipolar electrode length
N1, α
N2Become extreme direction to suffer compression/expansion along the part in the ferroelectric material.As known from documents and materials, piezoelectric response is by the subcells with polarity
N1, α
N2Cause that described polarity depends on into extreme direction.The bipolar electrode b that locates constantly at two has been shown in Fig. 5 a and 5b
m, c
mThe position, described two moment are represented the extreme value in the vibration period.In Fig. 5 a, bipolar electrode b
m, c
mAway from each other, and along bipolar electrode b
m, c
mAll unit α of length
N1And α
N2Be compressed in the horizontal.In Fig. 5 b, corresponding to time point after a while, bipolar electrode b
m, c
mMove to reduce the gap between them, make unit α
N1And α
N2On either side, extend.By piezoelectric activity, this piezoelectric activity is at unit α
N1And α
N2Between at each electrode a
n... locate synergistic, then at each electrode a
n... and suitable reference (electrode b for example
mAnd c
mOn average or intermediate electric potential) between produce voltage.The phase place of these voltages or instantaneous polarity then can be unique be connected to logic state in each storage unit 1, described storage unit is by electrode a
n... and bipolar electrode b
m, c
mBetween the point of crossing represent.Some tangible readout schemes can be made based on this fundamental vibration scheme, will be illustrational as following horse back.
Example 1: resonant excitation
According to the geometric condition of material, size and selection, vibration shown in Figure 5 can be encouraged by resonance ground.As according to can be easy to determine that the free running frequency of the structure of the cell width with micron size shown in Figure 5 will be very high to the corresponding selection of material, just at hundreds of kHz in the zone of hundreds of MHz.According to the Q value that obtains, can be at bipolar electrode b
m, c
mCarry out read operation with low voltage excitation, thereby make interference and crosstalk minimization in the read output signal.At last, the readout scheme among attention Fig. 5 provides the chance and the corresponding high data output rating of large-scale parallelism.
Example 2: belling (ring-down) detects
If obtain an abundant high mechanical q-value, then at bipolar electrode b
m, c
mElectron Excitation be closed after, shown vibration will continue for some time, thereby allow to read under the situation of not disturbing driving voltage.
Example 3: pulse detection
Need not sinusoidal or other periodic voltage excitation bipolar electrode b
m, c
m, can use single step or Delta (delta) pulse, thereby make α
N1And α
N2Cell compression or expansion.Be the piezoelectricity spark generator similarly.This provides a readout device very fast, because the compression sound wave is crossed subcells
N1And α
N2The time of passing through in typical memory construction, be in the subnanosecond scope.
Fig. 6 a and 6b represent a memory devices with planimetric map with along the sectional view that the intercepting of the A-A line among Fig. 6 a obtains respectively, this memory devices is very similar with shown in Fig. 1 and 2 in many aspects, except wherein encourage bipolar electrode b in a different manner in the data readout
m, c
mOutward.Accordingly, on the one-piece construction with at the coding (writing) of data with read and also have the certain physical difference in the process.Fill bipolar electrode b with a kind of material now
m, c
mBetween volume or gap beta
n, described material is electrical isolation and non-piezoelectricity, also adheres in addition on two bipolar electrodes, makes the distance that they are maintained fixed each other.As shown in Figure 7, carry out storage unit 1 at each electrode a
n, a
N+1, a
N+2... the subcells of locating
N1And α
N2The poling process, similarly use the coordination voltage protocol of mentioning below with reference to Fig. 7, Fig. 7 is relevant with Fig. 3 and 4.
Fig. 7 a-7d represents the subcells of storage unit 1
N1And α
N2How about relative bipolar electrode with relative mutually one-tenth extreme direction by poling.Corresponding matrix structure among the planimetric map of Fig. 7 a and Fig. 7 b is represented by the subcells in the storage unit 1 of profile (stitched outline) indication of sewing up
N1The poling process, and similarly Fig. 7 c and 7d represent subcells in this identical matrix structure
N2The poling process.Owing to no longer need to volume β
nIn any ferroelectric material polarize or to volume β
nIn any ferroelectric material to polarize be dangerous, so, and can not make non-selected subelement upset voltage and surpass Vp/3 even this also is possible now in passive matrix.Therefore, two unit α in principle
N1And α
N2In all 4 changes (permutations) selected of poling can both be implemented.
Fig. 8 a-8d is illustrated in the process of storage unit 1 sense data in the structure shown in Fig. 6 and 7.Fig. 8 a and 8c be with the part of plan representation according to the device of storer of the present invention, and Fig. 8 b and 8d represent respectively along the corresponding sectional view of the line A-A intercepting of Fig. 8 a and 8c.Have subcells equally
n..., β
nThe position of storage unit 1 represent by the profile of sewing up.As shown in the figure, adjacent electrode a
n-a
N+5Subcells
n-α
N+5Made and worked as at these electrodes and bipolar electrode b by poling
m, c
mBetween when applying a voltage, a clean power is applied to bipolar electrode b
m, c
mOn, thus with them to a layback/push away.Apply a sinusoidal voltage and will make bipolar electrode b
m, c
mAs the vibration of the right side, an a unit-left side, as Fig. 8 a and 8b shown in two time points.Clearly, under every kind of specific situation, all can select the quantity and the position of exciter units, for example at electrode a
nAnd a
N+5On those exciter units, to obtain to bipolar electrode b
m, c
mEnough whole excitations and do not sacrifice too many memory span.In Fig. 8 a, with data to electrode α
M+2, α
N+3, and α
N+4On storage unit 1 encode, described data in described Energizing cycle, produce respectively in this some place response+V ,-V and 0V.Described voltage produces in the piezoelectricity mode, and encourages the discussion that connects to be suitable for too at this about the difference of Fig. 5.Note selecting in the present circumstance will alleviate α to many bits of encoded of a certain degree
N1And α
N2The unit is used to encourage the shortcoming of purpose.
The also not shown insulation material layer that how to apply is to seal and to protect described storage unit and auxiliary circuit in above-mentioned accompanying drawing.In fact, must select and use the material on the top of the movable part of entire equipment so that avoid unsuitable decay or suppress described and move.In addition, conductive layer can be applied to the top of insulation course, prevent noise and interference so that electric shield to be provided.As described, set up at the top that is contemplated for ground floor under the situation of stacked structure, need comprise polarization process and the material between each layer in the layer heap is polarized, or the like.This it will be apparent to those skilled in the art that and will not do further discussion.
Can be apparent to by above-mentioned, the present invention provides new chance for the piezoelectric micromotor structure of setting up dense arrangement, described piezoelectric micromotor structure be in essence the plane and be consistent with multiple-level stack.Micromechanical motion occurs in the volume of good definition, and described volume has the material and the size of accurate control.Novel passive matrix architecture with bipolar electrode provides a plurality of different modes structure storage unit, and to wherein writing data, from its restore data with write new data to it once more.The extension of those contents that above preferred embodiment is disclosed and distortion will become apparent to those skilled in the art that and desired right will be included in the present patent application.
The invention provides the passive addressable matrix array of storage unit, its whole aspect has been known by the equipment of prior art, storage material layer wherein, for example ferroelectric polymers is sandwiched between first electrode layer with parallel strip electrode and the second parallel strip electrode layer, but be perpendicular to first group of positioning of electrode, thus for write/read operation can be unique addressing array in any storage unit.In the equipment of prior art, can obtain very high storage density, because the density of equipment can be the part micron, and electrode is provided in the close packed structure, simultaneously obtainable memory cell pitch approaches line width or minimum feature size, and it just can be provided by the resolution that provides at present by photoetching and the etching technique that is used to make electrode pattern.Certainly in described equipment, accumulation layer is set and does not need pattern-making with continuous layer with integral body.If every storage unit is represented a bit, then as hinting to provide and be approximately 25 bits/square micron or higher surface storage density by obtainable memory cell size and the memory cell pitch near minimum feature size of present micro-lithography and etching technique.
In the present invention, the width so that hold that groove 3 must have a twice of the width that the minimum feature size that provides by the available design criterion is provided is provided at wherein to be provided and the bipolar electrode b by routine techniques pattern-making, c.Yet, as under the situation of prior art, all electrodes of the present invention can be provided in the mode of so-called dense arrangement, referring to for example PCT/NO02/00414, and in fact can be very little perpendicular to the distance between the parallel adjacent grooves of electrode a location by what do, also can provide because can imagine groove 3 in the mode of dense arrangement.Yet, this will mean according to the surface storage density in the device of the present invention will less than by prior art have half of the obtainable surface storage density of memory device that closely spaced electrode arranges, but should remember that also the thickness of memory matrix of the present invention should equal the thickness of electrode a.In other words, the all functions parts of device of the present invention are included in the electrode layer that constitutes electrode a, and the sandwich construction of this and prior art forms contrast, and storage matrix is made of three continuous stack layers in the sandwich construction of prior art, as mentioned above.This can make device according to the present invention that improved body storage density is provided, the storage unit of just every volume unit storage or the quantity of bit are comparable to prior art, and rely on many bits of encoded (if it is performed in the present invention) further to be improved.Be further noted that by pile up storage matrix of the present invention each other at the top, according to device of the present invention, just storage matrix can be used for the organizator data storage device, it is similar to the known body equipment of prior art (volumetric device), because electrode b, the displacement of c or mobile occurring in laterally, in the horizontal direction just, and the stress vector in the storage material has identical direction.There is not the vertical storage matrix that takes place and pile up of moving up and down can not be subjected to the harmful interference of piezoelectric excitation of the storage unit of particular memory matrix in the stacker or equipment.-the universal of piling up is well known in the prior art and does not therefore just do further discussion here.
Certain in addition, the present invention has obtained more benefit: compare with the ferroelectrics or the electret matrix store based on ferroelectrics or electret polymeric material of prior art, the reliable piezoelectric property of ferroelectric storage material will provide short access time and an improvement to believe/make an uproar ratio greatly.As mentioned above, these may be present most preferred material, promptly poly-(vinylidene fluoride-trifluoro-ethylene) ester (poly (vinylidenedifluoride-trifluoroethylene)), but be not limited thereto multipolymer perhaps of the same clan.Show that ferroelectric and other alternative materials piezoelectric property considered by the applicant and comprise special (odd) nylon, vinylidene cyanide multipolymer (vinylidene-cyanide copolymers), polyureas (polyurea) and comprise the polymkeric substance of poly-nitride ester (polynitride) or acid imide (imide) family.
Claims (21)
1. data storage device, has the device that is used for operating at write and read respectively storage and restore data, wherein data are stored in the ferroelectric memory cells in the non-volatile mode as polarized state, wherein storage unit is provided in the passive addressable matrix array, wherein operation can independently be carried out electrical addressing to described storage unit for write and read, the addressing of described storage unit takes place by the crossed electrode of each first and second electrodes group, wherein each electrode group comprise electrode that parallel strip electrode makes the group of winning basically with second group electrode perpendicular positioning
It is characterized in that: first group of electrode (a) comprises a plurality of parallel grooves (3), it is with perpendicular to the direction horizontal-extending of electrode (a) and extend a distance less than the thickness of electrode (a) vertically downward from its top surface and have a profile that is essentially rectangle simultaneously, at least one ferroelectrics or electret memory material (2) are provided in the described groove (3) and cover its sidewall, described second group of electrode is provided as a pair of group electrode, each all comprise be provided in the described groove (3) and parallel with it and not with described first group of electrode (a) be in contact with one another parallel double electrode (b, c), described ferroelectric material (2) be provided at described groove (3) not by electrode (b, c) at least a portion of the volume that captures, described ferroelectrics or electret are soft or flexible ferroelectrics or the electret with piezoelectric property, and in addition also at second group electrode (b, c) and between first group the electrode (a) provide electrical isolation, thereby second group bipolar electrode (b under the effect of the power that suitably applies, c) can be at the soft ferroelectrics with piezoelectric property or electret (2) thus in transversal displacement takes place has produced piezoelectric effect therein, and second group bipolar electrode (b, c) and the described soft ferroelectrics in the volume between first group the electrode (a) or electret with piezoelectric property in described groove (3), form the subelement (α of storage unit (1)
1, α
2), described subelement (α
1, α
2) for write operation by each bipolar electrode (b, c) and apply an electric field between first group the crossed electrode (a) and can be by poling, thereby storage unit (1) is polarized at described subelement (α
1, α
2) middle at least one of storing in the two or more logical values that exist with one group of polarized state form, and pass through at described bipolar electrode (b, apply a voltage potential between in the adjacent electrode of at least one c) and/or in the described latter and the described first electrode group (a) at least one and can carry out nondestructive read to it and get, by bearing the subelement (α of tension force and/or pressure
1, α
2) ferroelectrics or electret utilize the stress that piezoelectric effect response responds to thus and can the parameter that obtain from its polarized state be detected in described subelement, thereby can find the subelement (α of storage unit (1)
1, α
2) logic state, and be stored in and comprise subelement (α
1, α
2) storage unit (1) in logical value can be determined.
2. device according to claim 1 is characterized in that:
Described soft ferroelectrics or electret (2) are the ferroelectrics polymkeric substance.
3. device according to claim 1 is characterized in that:
(b c) is supported by the non-ferroelectrics of the bottom surface that is positioned at groove (3) or one deck of non-electret (4) for ferroelectrics or electret (2) and described bipolar electrode.
4. device according to claim 1 is characterized in that:
Described bottom layer (4) can be combined or be not incorporated into other material in the described groove (3) and structure and can be random be chosen as elastic body.
5. device according to claim 4 is characterized in that:
Fill described bipolar electrode (b, c) gap between (β) with ferroelectrics or electret (2).
6. device according to claim 4 is characterized in that:
Fill described bipolar electrode (b, c) gap between (β) with the non-ferroelectric material (5) that is attached to its both sides.
7. device according to claim 4 is characterized in that:
(b c) forms a mechanically structure of resonance to described bipolar electrode, makes the vibration respect to one another by gap (β) opening/closing between them of described bipolar electrode.
8. device according to claim 1 is characterized in that:
(b c) forms a mechanically structure of resonance to described bipolar electrode, make described bipolar electrode vibrate to the side in groove (3), and the distance between them keeps constant.
9. device according to claim 1 is characterized in that:
Electrode (a, b, c) and provide on the top surface of storage unit (1) one or more machineries and/or the electricity insulation course.
10. method that non-destructive is read in data storage device according to claim 1 is characterized in that:
By making described selection be used for the subelement (α of the storage unit (1) of read operation
1, α
2) bear tension force and/or pressure and detect the voltage that produces by the piezoelectricity mode simultaneously or the phase place of electric current and/or polarity and/or amplitude are carried out reading of data, described voltage or electric current are by described subelement (α
1, α
2) stress that described tension force and/or pressure produces produces by using in response.
11. method according to claim 10 is characterized in that:
Described tension force and/or pressure be by electrode (b, mobile transmission c), (b c) is the parts that are used to define the physical arrangement of a given storage unit (1) to described electrode.
12. method according to claim 11 is characterized in that:
Described motion is parallel to the surface of the described array that supports storage unit (1).
13. method according to claim 11 is characterized in that:
Described tension force and/or pressure are by applying electric field so that (b, ferroelectrics c) or electret carry out poling and produce to contiguous described electrode.
14. method according to claim 13 is characterized in that:
Described ferroelectrics or electret (2) are polymkeric substance.
15. method according to claim 14 is characterized in that:
Described ferroelectrics or electret polymkeric substance (2) and subelement (α
1, α
2) in the material that uses identical.
16. according to any one described method of claim 10, it is characterized in that: described tension force and/or pressure are along with the variation of time cycle property.
17. method according to claim 16 is characterized in that:
The voltage that is produced by this mode of piezoelectricity or the detection of electric current are carried out by coherence average or lock-in techniques.
18. method according to claim 10 is characterized in that:
Described tension force and/or pressure are the single step pulse.
19. method according to claim 10 is characterized in that:
Described tension force and/or pressure are Delta pulse or this pulse train.
20. method according to claim 11 is characterized in that:
(b's described electrode simultaneously c) works to two or more storage unit (1).
21. one kind is used at the subelement (α of data storage device according to claim 1 to the storage unit (1) that is used for write operation
1, α
2) the right method of carrying out poling, it is characterized in that: (b, c) two of vertical orientation become each unit (α to described subelement centering in the extreme direction with relative bipolar electrode
1, α
2) carrying out poling, (b is c) with each unit (α of described subelement centering for described bipolar electrode
1, α
2) relatively, thereby become all four kinds of extreme direction possible be arranged in two right unit (α of described subelement
1, α
2) in can both be implemented.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20016100A NO20016100D0 (en) | 2001-12-14 | 2001-12-14 | Piezo non-destructive readout |
| NO20016100 | 2001-12-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1605104A true CN1605104A (en) | 2005-04-06 |
Family
ID=19913149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA028249313A Pending CN1605104A (en) | 2001-12-14 | 2002-12-12 | Apparatus and methods for nondestructive data storage and retrieval |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP1464055A1 (en) |
| JP (1) | JP2005513772A (en) |
| KR (1) | KR100554941B1 (en) |
| CN (1) | CN1605104A (en) |
| AU (1) | AU2002347685A1 (en) |
| CA (1) | CA2469910A1 (en) |
| NO (1) | NO20016100D0 (en) |
| RU (1) | RU2271581C2 (en) |
| WO (1) | WO2003052762A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165173A (en) * | 2013-04-03 | 2013-06-19 | 南京大学 | High-density ferroelectric data storage method realized by piezo response force microscope (PFM) probe |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NO321280B1 (en) * | 2004-07-22 | 2006-04-18 | Thin Film Electronics Asa | Organic, electronic circuit and process for its preparation |
| JP6393958B2 (en) * | 2013-05-15 | 2018-09-26 | 住友金属鉱山株式会社 | A device that can determine the polarity of a piezoelectric cylindrical crystal, or can determine the front and back depending on the polarization direction of a wafer as a crystal. |
| CN104617133B (en) * | 2015-01-23 | 2018-02-06 | 上海华虹宏力半导体制造有限公司 | The domain structure and its manufacture method of groove-shaped super-junction device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6242771B1 (en) * | 1998-01-02 | 2001-06-05 | Sharp Laboratories Of America, Inc. | Chemical vapor deposition of PB5GE3O11 thin film for ferroelectric applications |
| US6128214A (en) * | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
-
2001
- 2001-12-14 NO NO20016100A patent/NO20016100D0/en unknown
-
2002
- 2002-12-12 KR KR1020047009167A patent/KR100554941B1/en not_active IP Right Cessation
- 2002-12-12 EP EP02783863A patent/EP1464055A1/en not_active Withdrawn
- 2002-12-12 JP JP2003553571A patent/JP2005513772A/en not_active Abandoned
- 2002-12-12 AU AU2002347685A patent/AU2002347685A1/en not_active Abandoned
- 2002-12-12 CA CA002469910A patent/CA2469910A1/en not_active Abandoned
- 2002-12-12 WO PCT/NO2002/000476 patent/WO2003052762A1/en active Application Filing
- 2002-12-12 CN CNA028249313A patent/CN1605104A/en active Pending
- 2002-12-12 RU RU2004120775/09A patent/RU2271581C2/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165173A (en) * | 2013-04-03 | 2013-06-19 | 南京大学 | High-density ferroelectric data storage method realized by piezo response force microscope (PFM) probe |
| CN103165173B (en) * | 2013-04-03 | 2016-06-08 | 南京大学 | The high density ferrum electricity date storage method that a kind of piezoelectric forces microscope probe realizes |
Also Published As
| Publication number | Publication date |
|---|---|
| RU2271581C2 (en) | 2006-03-10 |
| KR20040068234A (en) | 2004-07-30 |
| EP1464055A1 (en) | 2004-10-06 |
| CA2469910A1 (en) | 2003-06-26 |
| WO2003052762A1 (en) | 2003-06-26 |
| RU2004120775A (en) | 2005-10-27 |
| JP2005513772A (en) | 2005-05-12 |
| KR100554941B1 (en) | 2006-03-03 |
| AU2002347685A1 (en) | 2003-06-30 |
| NO20016100D0 (en) | 2001-12-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1118826C (en) | Ferroelectric random access memory device with reference cell array blocks | |
| CN1278336C (en) | Ferroelectric data processing device | |
| US7266008B2 (en) | Bimodal operation of ferroelectric and electret memory cells and devices | |
| US20200279598A1 (en) | Three-dimensional non-volatile ferroelectric memory | |
| CN100530420C (en) | Non-volatile passive matrix and method for read out of the same | |
| JP2002026277A (en) | Memory device and method for driving the same | |
| CN103650046A (en) | Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate | |
| CN1440554A (en) | Method for performing write and read operations in passive matrix memmory, and apparatus for performing method | |
| US6683803B2 (en) | Apparatus and methods for data storage and retrieval | |
| CN101080820A (en) | Scrambling method to reduce wordline coupling noise | |
| CN1605104A (en) | Apparatus and methods for nondestructive data storage and retrieval | |
| CN1701386A (en) | Method for reading a passive matrix-addressable device and a device for performing the method | |
| CN1181551C (en) | 2T-1C ferroelectric random access memory and its operation method | |
| US20050213364A1 (en) | Device structure of ferroelectric memory and nondestructive reading method | |
| CN1426585A (en) | Ferroelectric memory device and its driving method | |
| JP3944450B2 (en) | Non-destructive read method and apparatus using this method | |
| KR100554676B1 (en) | Non-volatile memory device | |
| KR20050049860A (en) | Charge-dipole coupled information storing media | |
| US20030063499A1 (en) | Non-volatile memory device | |
| US7208786B2 (en) | Memory device | |
| Kim et al. | Voltage control of magnetization easy-axes: a potential candidate for spin switching in future ultrahigh-density nonvolatile magnetic random access memory | |
| CN1643616A (en) | A volumetric data storage apparatus comprising a plurality of stacked matrix-addressable memory devices | |
| NO319224B1 (en) | Apparatus and methods for storing and retrieving data | |
| KR20010026311A (en) | Ferroelectric random access memory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1075322 Country of ref document: HK |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1075322 Country of ref document: HK |