CN1603955A - Holotype photoresist composite - Google Patents

Holotype photoresist composite Download PDF

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Publication number
CN1603955A
CN1603955A CNA200410071372XA CN200410071372A CN1603955A CN 1603955 A CN1603955 A CN 1603955A CN A200410071372X A CNA200410071372X A CN A200410071372XA CN 200410071372 A CN200410071372 A CN 200410071372A CN 1603955 A CN1603955 A CN 1603955A
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Prior art keywords
composition
positive light
agent composition
light anti
etching agent
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CNA200410071372XA
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CN1291277C (en
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森尾公隆
加藤哲也
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Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)

Abstract

A positive photoresist composition comprises (A) an alkali-soluble novolac resin, (C) a naphthoquinonediazido-containing compound, (D) an organic solvent and (E) a polyester modified polydialkylsiloxane surfactant including a specified repeating unit that is represented by the formulas (1) and (2), wherein, R<1> represents the chain or branch chain alkyl having one to three carbon atoms, R<2> represents the chain or branch chain alkyl having one to fifteen carbon atoms, and R<3> represents polyester modified group. The invention can a positive photoresist composition capable of solving at least one of the following technical problems: prevention of the occurrence of haze and unevenness when the top of a highly reflective metal film is coated with a photoresist composition; improvement of uniformity of film thickness by preventing the occurrence of drop marks in a coating method by spinning after central dropping; and improvement of uniformity of film thickness by preventing the occurrence of streaks in a discharge nozzle system coating method.

Description

Positive light anti-etching agent composition
Technical field
The present invention relates to a kind of positive light anti-etching agent composition.
Background technology
During making, uses wiring pattern in LCD (liquid crystal cell) the manufacturing field corrosion-resisting pattern usually.The formation of corrosion-resisting pattern is roughly as follows: painting photoresist composition on substrate, form the resist tunicle, and after this resist tunicle is optionally exposed, form corrosion-resisting pattern by developing.
Therefore, if will make fine wiring pattern with good precision, one of major technology problem is the uniform film thickness that guarantees the resist tunicle.
In the manufacturing of TFT type liquid crystal board, generally be on transparent glass substrate, to form metal film as gate electrode, on this metal film, form corrosion-resisting pattern, gate electrode carry out wiring patternization.Gate electrode can be made of metals such as alloys such as molybdenum tantalum, molybdenum tungsten or tantalum, molybdenum, aluminium.
Past is adopted the drip method (as, following non-patent literature 1) of back rotation in central authorities mostly as the coating process of photo-corrosion-resisting agent composition in LCD manufacturing field.
Non-patent literature 1 Electronic Journal in August, 2002 number, 121～123 pages
In addition, particularly substrate is the trend of maximization year by year in LCD manufacturing field, and when adopting central authorities to drip the rubbing method of back rotation, for example substrate is the large substrate of 1m * 1m level, is then got rid of during rotation (during spin) and discarded dosage against corrosion is quite a lot of.And this coating process also exists because of high speed rotating produces substrate breakage or difficulty is guaranteed productive temp time problems such as (tact time), is difficult to satisfy the requirement beyond the coating homogeneity.
Consider from aforesaid present situation, as can be applicable to the 4th generation substrate (after the 680mm * 880mm), the novel resist coating process of the later large substrate of the 5th generation substrate (about 1000mm * 1200mm～1280mm * 1400mm) particularly, the someone has proposed to adopt the resist-coating method of discharge nozzle mode.
Adopting the resist-coating method of discharge nozzle mode, is by discharge nozzle and substrate relatively being moved, be coated with the method for positive light anti-etching agent composition on the whole coated face of substrate.As this method, for example provide: use to have to be arranged in the ejiction opening of ejiction opening that the row shape forms and slit-shaped and photo-corrosion-resisting agent composition can be sprayed into the method for banded discharge nozzle by a plurality of nozzle bores.In addition, also provide the employing discharge nozzle type behind painting photoresist composition on the whole coated face of substrate, to make this substrate rotation to adjust the method for thickness.
As mentioned above, when on transparent glass substrate, being formed with the metal film as gate electrode, though reason is also indeterminate, but we know on the metal film of above-mentioned highly reflective the painting photoresist composition, and after the coating from above observe the resist tunicle be formed on the substrate, then can confirm the shape (confuson disc) of bluring.
In addition, in the resist tunicle on being formed on the low substrate of glass substrate isoreflectance, the proterties on resist tunicle surface is difficult to confirm that still at present confirmable is that this confuson disc and substrate kind are irrelevant, uses which kind of substrate all can take place.
Photo-corrosion-resisting agent composition is dropped in the rubbing method of central authorities backs rotation, can form circular drop impression at the position of dripping, it residues in sometimes in the resist tunicle always and does not disappear.Be on the metal film of major component during the painting photoresist composition with the molybdenum at molybdenum or molybdenum alloy etc. particularly, this phenomenon is more remarkable.If formed aforesaid drop impression, will produce film thickness difference in the plane of resist tunicle, the problem of the dimensional accuracy decline of corrosion-resisting pattern can appear in its result.
Relevant discharge nozzle type rubbing method constantly has the apparatus for coating that is suitable for this method to be developed and open recently, and one of subject matter from now on is how to optimize the photo-corrosion-resisting agent composition that is used for this rubbing method and the resist tunicle is kept evenly.
Discoveries such as the inventor behind painting photoresist composition on the whole coated face of substrate, form streak on the coated film sometimes, and it are the reasons that causes the membrane thickness unevenness of resist tunicle with the discharge nozzle type rubbing method.When particularly after with discharge nozzle type rubbing method painting photoresist composition, making the substrate rotation, form the trace of strip easily at the middle body of substrate.So also find, the generation of this streak can suppress by form the preceding coated film of rotation than heavy back, so the resist-coating amount will increase, particularly in the liquid crystal display cells manufacturing field in recent years of being strict with control resist consumption (economizing thinner against corrosion), this is difficult to be suitable for.
Summary of the invention
The present invention is In view of the foregoing and proposes, and its purpose is to provide and can solves one of following technical matters at least, preferably can solve the positive light anti-etching agent composition of following whole technical matterss: suppress the generation of confuson disc on the metal film of highly reflective during the painting photoresist composition; The generation that suppresses drop impression after central authorities drip in the rubbing method of rotation is to improve film thickness uniformity; And the generation that suppresses streak in the discharge nozzle type rubbing method is to improve film thickness uniformity.
The inventor makes photo-corrosion-resisting agent composition contain specific surfactant and just can solve the technical problem, thereby finished the present invention through discovering repeatedly.
That is, the feature of positive light anti-etching agent composition of the present invention is: contain the polyester modification polydialkysiloxane class surfactant that (A) alkali solubility novolac resin, (C) contain naphthoquinones diazido compound, (D) organic solvent and (E) contain the repetitive shown in repetitive shown in the following general formula (1) and the following general formula (2).
Figure A20041007137200071
(R 1The expression carbon number is 1～3 straight or branched alkyl, R 2The expression carbon number is 1～15 straight or branched alkyl),
(R 1The expression carbon number is 1～3 straight or branched alkyl, R 3Expression polyester modification base).
" formation unit " in this instructions is meant the monomeric unit that constitutes polymkeric substance (resin).
" coated face of substrate " in this instructions is meant the zone that needs the painting erosion resistant agent composition in the substrate, normally a whole side of substrate.
According to positive light anti-etching agent composition of the present invention, on the metal film of highly reflective, can suppress the generation of confuson disc during the painting photoresist composition.After central authorities drip, can suppress the generation of drop impression in addition in the rubbing method of rotation, the homogeneity of thickness is improved.Also have, in the discharge nozzle type rubbing method, can suppress the generation of streak, improve film thickness uniformity.
Embodiment
Below describe the present invention in detail.
[(A) composition]
At random select to utilize in the material that employed alkali solubility novolac resin (A) can be used as tunicle formation material from positive light anti-etching agent composition usually among the present invention.
Particularly, when the polystyrene conversion weight-average molecular weight (being designated hereinafter simply as Mw) of (A) composition integral body is 6000 when above, more satisfactory aspect the uniform film thickness that makes the resist tunicle, in the discharge nozzle type rubbing method, can more effectively prevent the generation of streak especially.(A) the more preferably scope of the Mw of composition is 6000～10000.
Can enumerate that send as an envoy to following phenols and following aldehydes react and the novolac resin that obtains under the acidic catalyst condition as the concrete example of alkali solubility novolac resin (A).
Described phenols can be listed below: phenol; Cresols such as m-cresols, p-cresols, o-cresols; 2,3-xylenols, 2,5-xylenols, 3,5-xylenols, 3, dimethylbenzene phenols such as 4-xylenols; M-ethyl-phenol, p-ethyl-phenol, o-ethyl-phenol, 2,3,5-pseudocuminol, 2,3,5-triethyl phenol, 4-tert-butyl phenol, 3-tert-butyl phenol, 2-tert-butyl phenol, the 2-tert-butyl group-4-methylphenol, the 2-tert-butyl group-induced by alkyl hydroxybenzene such as 5-methylphenol; Alkoxy phenols such as p-metoxyphenol, m-metoxyphenol, p-thanatol, m-thanatol, p-propoxyl group phenol, m-propoxyl group phenol; O-isopropenyl phenol, p-isopropenyl phenol, 2-methyl-4-isopropenyl phenol, 2-ethyl-isopropenyl phenols such as 4-isopropenyl phenol; Aryl phenols such as phenylphenol; 4,4 '-dihydroxybiphenyl, bisphenol-A, resorcinol, p-dihydroxy-benzene, 1,2, polyhydroxy phenols such as 3-benzenetriol etc.They can use separately, perhaps also can be used in combination more than 2 kinds.In above-mentioned phenols, preferred especially m-cresols, p-cresols.
Described aldehydes can be listed below: formaldehyde, paraformaldehyde trioxane, acetaldehyde, propionic aldehyde, butyraldehyde, trimethyl-acetaldehyde, acryl aldehyde, crotonaldehyde, hexamethylene aldehyde, furfural, furylacrolein, benzaldehyde, terephthalaldehyde, phenyl acetaldehyde, α-hydrocinnamicaldehyde, the beta-phenyl propionic aldehyde, the o-hydroxy benzaldehyde, the m-hydroxy benzaldehyde, the p-hydroxy benzaldehyde, the o-tolyl aldehyde, the m-tolyl aldehyde, the p-tolyl aldehyde, o-chlorobenzene formaldehyde, m-chlorobenzene formaldehyde, p-chlorobenzene formaldehyde, cinnamic acid etc.They can use separately, perhaps also can be used in combination more than 2 kinds.In the above-mentioned aldehydes, consider preferred formaldehyde from the aspect of easy acquisition.
Can use hydrochloric acid, sulfuric acid, formic acid, oxalic acid, p-toluenesulfonic acid etc. as described acidic catalyst.
Among the present invention, (A) composition can be made of a kind of novolac resin, also can be made of the novolac resin more than 2 kinds.When constituting, the Mw of each novolaks there is not particular determination, as long as (A) Mw of composition integral body is in the scope more than 6000 by the novolac resin more than 2 kinds.
[(A ') composition]
Among the present invention, alkali solubility novolac resin (A) contains the resin more than a kind (A ') that is selected from the following resin: for the mixing phenols of m-cresols/p-cresols=20/80～40/60 (input ratio), 's 4000～6000 novolac resin with formaldehyde as the synthetic Mw of condensation agent, the adjustment that this is suitable for the resist composition of high sensitivity helps improving the residual film of unexposed portion.
(A) composition especially preferably contains following resin: promptly for the mixing phenols of m-cresols/p-cresols=20/80～40/60 (input ratio), 's 4000～6000 novolac resin (A1) with formaldehyde as the synthetic Mw of condensation agent, with mixing phenols for m-cresols/p-cresols=20/80～40/60 (input ratio), with formaldehyde as the synthetic Mw of condensation agent be 5000～10000, Mw is greater than the novolac resin (A2) of (A1).
(A1), the Mw of (A2) composition, from the high sensitivityization of resist composition with improve the residual film ratio aspect and consider that the Mw of the former (A1) preferred 4000～6000, preferred especially 4500～5500.The latter (A2) preferred 5000～10000, preferred especially 5500～6500.
In described (A '), the ratio of m-cresols/p-cresols is preferably 25/75～35/65 especially.Also have, the part of the p-cresols that is used for reacting can be present in reaction system as unreacted reactant or 2 nucleome things, after synthetic reaction finishes, will be removed when the low-molecular-weight body is the lock out operation of purpose to remove carrying out, therefore to constitute the monomer ratio that unit/p-cresols constitutes the unit be 25/75～45/55, particularly 30/70～40/60 to the m-cresols in the novolac resin that finally obtains.
(A) the preferred total content of (A ') composition in the composition is 10～60 quality %, more preferably 45～55 quality %.When (A) content of (A ') in the composition is beyond above-mentioned scope, be difficult to obtain the effect of improving of high sensitivityization and residual film ratio.
[(A3) composition]
In addition, consider from the angle of the generation that can suppress streak effectively, preferably contain following resin in the alkali solubility novolac resin (A), that is: for the mixing phenols of m-cresols/p-cresols=50/50～70/30 (input ratio), be novolac resin (A3) more than 9000 as the synthetic Mw of condensation agent with formaldehyde.The ratio of described m-cresols/p-cresols is preferably 55/45～65/35 especially.Also have, the part of the p-cresols that is used for reacting is present in reaction system as unreacted reactant or 2 nucleome things, after synthetic reaction finishes, can be removed when the low-molecular-weight body is the lock out operation of purpose to remove carrying out, therefore to constitute the monomer ratio that unit/p-cresols constitutes the unit be 55/45～75/25, particularly 60/40～70/30 to the m-cresols in the novolac resin that finally obtains.
(A3) if the Mw of composition is too big, the sensitivity of resist composition is descended, the fissility of the corrosion-resisting pattern in the corrosion-resisting pattern stripping process is brought harmful effect, and too hour, it is relatively poor to suppress the effect that streak produces, so Mw is preferably more than 9000, and more preferably 9500～15000.
When using (A3) composition, (A) (A3) composition in the composition preferably to contain proportional be 40～90 quality %, more preferably 45～55 quality %.(A) in the composition (A3) if contain proportionally greater than described scope, the sensitivity of resist composition is descended, the fissility of the corrosion-resisting pattern in the corrosion-resisting pattern stripping process is produced harmful effect, and too hour, it is relatively poor to suppress the effect that streak produces.
Among the present invention, (A) composition preferably contains described (A ') composition and (A3) composition simultaneously.At this moment (A ') composition and (A3) proportionally represent preferably in the scope of [(A ')]/(A3)=10/90～60/40, more preferably in 45/55～55/45 scope containing of composition with mass ratio.(A) composition more preferably contains described (A1) composition and (A2) and (A3) these 3 kinds of compositions of composition.
In addition as required, can also make that (A) composition contains (A '), the novolac resin beyond (A3) composition.(A) in the composition (A ') and (A3) total preferably to contain proportional be more than the 50 quality %, more preferably more than the 90 quality %.Also can be 100 quality %.
[(B) composition]
In the eurymeric resist composition of the present invention, be to contain phenol hydroxyl compound (B) below 1000, can obtain to improve the effect of sensitivity because of containing molecular weight.Particularly in LCD manufacturing field, improve productive capacity and be very important problem, and the resist consumption figure is often more, therefore wish that the resist composition has high sensitivity and cheap characteristic, use when being somebody's turn to do (B) composition, can realize high sensitivityization with lower cost, therefore preferred.
In addition, when containing (B) composition, can form surperficial difficult deliquescent layer securely in corrosion-resisting pattern, it is less that the film of the resist film of unexposed portion is received decrement when therefore developing, and can suppress the development inequality that difference produced because of development time, thereby more satisfactory.
(B) if the molecular weight of composition surpasses 1000, the fall of sensitivity might increase, thereby not ideal.
As this (B) composition, can suitably use LCD in the past to make employed molecular weight in the positive light anti-etching agent composition of usefulness and contain the phenol hydroxyl compound below 1000.Wherein use containing the phenol hydroxyl compound and can effectively improving sensitivity of following general formula (III) expression, thus more satisfactory.
[in the formula, R 1～R 8Represent the alkyl of hydrogen atom, halogen atom, carbon number 1～6, the alkoxy of carbon number 1～6 or the naphthenic base of carbon number 3～6 independently of one another; R 10～R 11Represent the alkyl of hydrogen atom or carbon number 1～6 independently of one another; R 9Can be the alkyl of hydrogen atom or carbon number 1～6, at this moment Q be the alkyl of hydrogen atom, carbon number 1～6 or the residue of following chemical formula (IV) expression
(in the formula, R 12And R 13Represent the alkyl of hydrogen atom, halogen atom, carbon number 1～6, the alkoxy of carbon number 1～6 or the naphthenic base of carbon number 3～6 independently of one another; C represents 1～3 integer); Or Q and R 9And Q and R 9Between carbon atom represent the naphthenic base of carbon number 3～6 together; A, b represent 1～3 integer; D represents 0～3 integer; A, b or d are 3 o'clock, R 3, R 6, R 8Do not exist respectively; N represents 0～3 integer].
These can use wherein any, and also two or more kinds may be used.
Above-named containing in the phenol hydroxyl compound, the compound of representing with following formula (I) has good high sensitivityization and high residual film ratioization, thereby desirable especially.
With respect to (A) composition alkali solubility novolac resin 100 mass parts, (B) use level of composition is 1～25 mass parts, the scope of preferred 5～20 mass parts.The content of (B) composition can not obtain high sensitivityization and high residual film ratio effect very little the time fully in the photo-corrosion-resisting agent composition, and when too many, is easy to generate the residue thing on the substrate surface after the development, and raw materials cost can increase, thereby not ideal.
[(C) composition]
It is the photonasty composition that (C) among the present invention contains naphthoquinones diazido compound.For example can use as this (C) composition: the employed material of photonasty composition of in the past making the positive light anti-etching based composition and use thereof in packaging of usefulness as LCD.
For example, as (C) composition, contain phenol hydroxyl compound and 1 shown in the following formula (II), the esterification reaction product of 2-naphthoquinones diazido sulfoacid compound is dirt cheap because of it and can modulates the photo-corrosion-resisting agent composition of high sensitivity, thereby more satisfactory.
The average esterification yield of this esterification reaction product is 50～70%, and is preferred 55～65%, if be lower than 50%, the film after developing is easily received and subtracted, and residual film ratio can step-down, and above 70% o'clock, storage stability might descend, thereby not ideal.
Described 1,2-naphthoquinones diazido sulfoacid compound is preferably 1,2-naphthoquinones diazido-5-sulfonyl compound.
In addition, except described photonasty composition, can also use other quinone diazido carboxylate, but their use amount is preferably below the 50 quality % in (C) composition, below the preferred especially 25 quality % as (C) composition.
As other quinone diazido carboxylate; for example can use; above-mentioned general formula (III) is represented contains phenol hydroxyl compound and 1; 2-naphthoquinones diazido sulfoacid compound, preferably with 1; 2-naphthoquinones diazido-5-sulfonyl compound or 1, the esterification reaction product of 2-naphthoquinones diazido-4-sulfonyl compound.
The use level of (C) composition in the photo-corrosion-resisting agent composition of the present invention, with respect to the alkali solubility novolac resin (A) and total amount 100 mass parts that contain phenol hydroxyl compound (B) of being added as required, preferred 15～40 mass parts, the more preferably scope of 20～30 mass parts.When (C) content of composition was less than above-mentioned scope, the decline of transfer printing was remarkable, can not form the corrosion-resisting pattern of required form.On the other hand, if greater than above-mentioned scope, sensitivity and resolution meeting variation, and be easy to generate the residue thing after the development treatment.
[(D)] composition]
The present composition preferably is dissolved in (A)～(C) composition, (E) and various adding ingredient in the organic solvent (D), uses with the form of solution.
As the organic solvent that uses among the present invention, consider preferred propylene glycol methyl ether acetate (PGMEA) from film thickness uniformity aspect with the good resist tunicle on good coating and the large-size glass substrate.
PGMEA is ideal when separately solvent uses, also can with solvent and the usefulness beyond the PGMEA, for example: ethyl lactate, gamma-butyrolacton, propylene glycol monobutyl ether etc.
When using ethyl lactate, be 0.1～10 times of amount with respect to the mass ratio of PGMEA, the scope of preferred 1～5 times of amount.
In addition, when using gamma-butyrolacton, be 0.01～1 times of amount with respect to the mass ratio of PGMEA, the scope of preferred 0.05～0.5 times of amount.
Particularly in LCD manufacturing field, usually the thickness that requires control to be formed on the resist tunicle on the glass substrate is 0.5～2.5 μ m, 1.0～2.0 μ m more preferably, for this reason, behind painting photoresist composition on the substrate, preferably make this substrate rotation with the discharge nozzle mode to adjust thickness.
Among the present invention, with an organic solvent (D) is adjusted into the total amount of described (A)～(C) composition in the resist composition below the 30 quality % of gross mass of composition, is preferably 20～28 quality %, further preferred 10～25 quality %.Thus, when spraying banded photoresist based composition and use thereof in packaging by discharge nozzle and being coated on the substrate, can obtain good coating, simultaneously, can also after rotation in obtain good flowability, therefore use the organic solvent (D) of described amount just can form the good resist tunicle of film thickness uniformity with high productivity, therefore more satisfactory.
[(E) composition]
The polyester modification polydialkysiloxane class surfactant that contains the repetitive of representing as the repetitive that contains following general formula (1) expression and the following general formula (2) of (E) composition in the photo-corrosion-resisting agent composition.Can prevent the generation of streak in the discharge nozzle type rubbing method and central authorities drip in the rotary process of the back generation of drop impression and the generation of confuson disc thus effectively, form the good tunicle of film thickness uniformity.
(R 1The straight or branched alkyl of expression carbon number 1～3, R 2The straight or branched alkyl of expression carbon number 1～15),
Figure A20041007137200142
(R 1The straight or branched alkyl of expression carbon number 1～3, R 3Expression polyester modification base).
So long as contain the siloxane type surfactants of the repetitive shown in the described general formula, just not having particular determination as (E) composition, also can be the material that contains the unit beyond this repetitive.
But, in order to realize purpose of the present invention, be major component preferably, and further the silicon atom of preferred polymers end can be represented with following general formula (3) with the repetitive shown in the described general formula.
Figure A20041007137200143
(R wherein 1Straight or branched alkyl for carbon number 1～3).
Suitable concrete example has: commodity are called BYK-310, BYK-315 products such as (being PVC Star Network ケ ミ-system).Wherein particularly BYK-310 can suppress confuson disc or drop impression, and the generation of streak well, and is therefore more preferred.
For effectively and realize the uniform film thicknessization of resist tunicle expeditiously, with respect to removing organic solvent (D) and (E) solid constituent behind the composition in the photo-corrosion-resisting agent composition, (E) preferred 0.001～1 quality % of the use level of composition, preferred especially 0.001～0.1 quality % of generation that be to suppress streak is the scope of preferred especially 0.1～0.5 quality % of generation that suppresses confuson disc or drop impression.
[other composition]
In the composition of the present invention, in nothing undermines the scope of the object of the invention, can also use various adjuvants such as preserving stabilizer.
Composition is suitably contained for example be used for anti-corona ultraviolet light absorber, as: 2,2 ', 4,4 '-tetrahydroxybenzophenone, 4-dimethylamino-2 ', 4 '-dihydroxy benaophenonel, 5-amino-3-methyl isophthalic acid-phenyl-4-(4-hydroxy benzenes azo group) pyrazoles, 4-dimethylamino-4 '-hydroxyazobenzene, 4-diethylin-4 '-ethoxy azobenzene, 4-diethylin azobenzene, curcumin etc.
In addition, in the composition of the present invention, can also suitably contain and be useful on the adaptation reinforcing agent of increase by the adaptation between the formed layer of photo-corrosion-resisting agent composition and its lower floor.As the preferred 2-of adaptation reinforcing agent (2-hydroxyethyl) pyridine.When photo-corrosion-resisting agent composition suitably contains this compound, for example on metal films such as Cr film, form in the corrosion-resisting pattern, can increase effectively by the adaptation between formed layer of photo-corrosion-resisting agent composition and the metal film.
When containing the adaptation reinforcing agent, if its use level is too many, the resist composition through the time change might variation, if and very little, can not fully obtain the effect that adaptation increases, therefore, in the scope with respect to preferred 0.1～10 quality % of all solids composition adaptation reinforcing agent.
When using the photo-corrosion-resisting agent composition of this composition, the film thickness uniformity of resist tunicle is good, can prevent the generation of drop impression when the method coating of the back rotation of dripping with central authorities.
In addition, also be suitable for the rubbing method of discharge nozzle mode, when spraying banded photo-corrosion-resisting agent composition and being coated on the substrate, can prevent the generation of streak by discharge nozzle.Particularly, when on substrate, making the substrate rotation with accent film thick (as 0.5～2.5 μ m) after coating (being covered with liquid) photo-corrosion-resisting agent composition, if do not form the resist tunicle of the coating thickness about 300～500 μ m than heavy back, be easy to generate streak after the rotation, but according to photo-corrosion-resisting agent composition of the present invention, even form the coating thickness about 80～120 μ m, preferred 100 μ m before the rotation, also can prevent to rotate the back and produce streak.
In addition, compare with the silicon chip that uses in the semiconductor element manufacturing field, what use in the LCD manufacturing field is large-scale substrate (more than 360mm * 460mm), and the substrate surface of LCD manufacturing usefulness exists very large concavo-convex, and have the distortion etc. of substrate itself, it is different therefore wanting the situation of state when making LCD and manufacturing semiconductor element of the substrate surface of painting photoresist composition.Therefore the photo-corrosion-resisting agent composition of LCD manufacturing usefulness and the photo-corrosion-resisting agent composition of semiconductor element manufacturing usefulness exist technical difference.
The good effect of film thickness uniformity of the resist tunicle that is obtained by positive light anti-etching agent composition of the present invention can both obtain under following two kinds of situations effectively, promptly, no matter be to be under the situation of the LCD large-scale square glass substrate of making usefulness at substrate, still being pre-formed molybdenum layer or molybdenum alloy layer etc. as the superficial layer of substrate is the layer of principal ingredient and forming under the situation of resist tunicle on this superficial layer with the molybdenum, can both obtain uniform thickness effectively.
Therefore positive light anti-etching agent composition of the present invention can be applicable in the liquid crystal manufacturing process well.
In addition, photo-corrosion-resisting agent composition of the present invention, also applicable to the discharge nozzle type rubbing method at the whole coated face of substrate according to final desired thickness painting photoresist, and the method that is not rotated (method without spin), and photo-corrosion-resisting agent composition of the present invention also is suitable for behind the whole coated face painting photoresist composition of substrate, makes the substrate rotation to adjust the method for thickness.Be particularly suitable for the latter's method, can suppress the resist-coating amount and prevent postrotational streak, therefore can help to reduce the resist consumption, boost productivity and reduce cost.
[the formation method of corrosion-resisting pattern]
Below the formation method of corrosion-resisting pattern of the present invention is illustrated.
At first carry out the painting process of coating positive light anti-etching agent composition of the present invention on the whole coated face of substrate.
Substrate does not have particular determination, can use to be formed with metal film that constitutes gate electrode and the substrate that this metal film becomes superficial layer on insulated substrates such as glass substrate.This superficial layer can be that the metal film of principal ingredient constitutes with the molybdenum by molybdenum alloys such as molybdenum tantalum, molybdenum tungsten or molybdenum film etc.
For example can use on glass substrate lamination successively to form the substrate of state of ITO Wiring pattern, layer insulation layer pattern and the molybdenum film of 0.5 μ m as the coating object.
Painting process can adopt drip any enforcement in rotary process or the discharge nozzle type rubbing method of central authorities.
Central authorities' rotary process of dripping can be suitable for known method and carries out.
The discharge nozzle type rubbing method can utilize to have the device of the mechanism that discharge nozzle and substrate relatively move is carried out.Formation for discharge nozzle is not particularly limited, if from the photo-corrosion-resisting agent composition of nozzle ejection can be on substrate applied becoming band.For example can use to have and be arranged in the discharge nozzle of the ejiction opening that the row shape forms or have the discharge nozzle of slit-shaped ejiction opening by a plurality of nozzle bores.As the apparatus for coating with this painting process, known have a Tu Bu ﹠amp; The TR63000S of mode (goods name without spin; Chemical industry (strain) system is answered in Tokyo).
In addition, can also use in the described painting process and utilize the discharge nozzle type rubbing method behind painting erosion resistant agent composition on the substrate, to make substrate rotation so that thickness is transferred thin method.As the apparatus for coating with this painting process, known have a Xia Feng ﹠amp; The SK-1100G of rotation mode (goods name; Big Japanese screen manufacturing (strain) system), utilize CL1200 (the goods name of the scanning coating+rotation mode of MMN (many micro-nozzles); TEL's (strain) system), coating ﹠amp; The TR63000F of rotation mode (goods name; Chemical industry (strain) system is answered in Tokyo) etc.
Behind coating positive light anti-etching agent composition on the whole coated face of substrate, that be used to form corrosion-resisting pattern as described above operation can suitably be used known method.
For example, the substrate that is coated with photo-corrosion-resisting agent composition at 100～140 ℃ of heat dryings (prebake), is formed the resist tunicle.Afterwards, by required mask pattern, the resist tunicle is optionally exposed.Wavelength during exposure can be suitable for ghi line (g line, h line and i line) or i line, can use each suitable light source.
Afterwards,, use the developer solution of forming by alkaline aqueous solution, carry out development treatment as 1～10 quality % tetramethyl ammonium hydroxide (TMAH) aqueous solution to the resist tunicle after optionally exposing.
As the method that developer solution is contacted with the resist tunicle, for example can use: be covered with the method for liquid and make developer solution spread all over the method on whole base plate surface to the other end by the developer solution dropping liquid nozzle that is arranged near the top the substrate center from an end of substrate.
Leave standstill then and develop for 50～60 seconds, implement to wash off the rinsing process of the developer solution that remains in the corrosion-resisting pattern surface afterwards, obtain corrosion-resisting pattern with rinsing liquids such as pure water.
In addition, when the metal film of the lower floor of this corrosion-resisting pattern is carried out wiring pattern, for example in as perchloric acid/cerous nitrate the 2nd ammonium/water (3: 1: 16 weight ratios) solution of etching solution, flooded 10 minutes, molybdenum film (metal film) is carried out optionally etching, peel off corrosion-resisting pattern with 4% sodium hydrate aqueous solution afterwards, thereby can on glass substrate, form the conductive pattern that constitutes by the molybdenum film.
Formation method according to aforesaid corrosion-resisting pattern, the drop impression in the method that can prevent to rotate after confuson disc or central authorities from dripping and the generation of the streak in the discharge nozzle type rubbing method, form the good corrosion-resisting pattern tunicle of film thickness uniformity, therefore can form the high corrosion-resisting pattern of dimensional accuracy.
In addition, on the substrate that in the past is easy to generate drop impression especially, also can form the good resist tunicle of film thickness uniformity with the superficial layer that forms by molybdenum or molybdenum alloy.
Particularly when using the discharge nozzle type rubbing method,, also can on substrate, form the resist tunicle under coating homogeneity and the condition of productive temp time not influencing even substrate size, plant bulk maximize.
And then, when after coating, being rotated, can when suppressing the resist-coating amount, prevent the generation of streak, therefore help reducing manufacturing cost.
[embodiment]
Obtained each rerum natura of positive light anti-etching agent composition according to following method.
(1) evaluation of confuson disc and drop impression
Apparatus for coating (chemical industry society system is answered in Tokyo, goods name TR36000) with adopting the central method of spin coating that drips makes sample (positive light anti-etching agent composition) be formed with the glass substrate (360 * 460mm of molybdenum film 2) the last coated film that forms certain thickness (1.5 μ m).
Then, the temperature of electric hot plate is made as 130 ℃, carry out the 1st drying in 60 seconds by the contiguous oven dry that is about 1mm at interval, then the temperature of electric hot plate is made as 120 ℃, and by being about contiguous the 2nd drying of carrying out for 60 seconds of drying of 0.5mm at interval, forming thickness is the resist tunicle of 1.5 μ m.
Under sodium vapor lamp, observe the surface of resulting resist tunicle, cannot see the usefulness zero of confuson disc and drop impression generation and represent, can confirm the usefulness * expression of the generation of confuson disc and drop impression.
(2) evaluation of streak
With apparatus for coating (chemical industry society system is answered in Tokyo, goods name TR63000F) sample (positive light anti-etching agent composition) is covered with (1100 * 1250mm on the glass substrate that is formed with the Cr film according to certain thickness (80 μ m, 100 μ m, 120 μ m) 2).Form the coated film that thickness is about 1.5 μ m by rotating this glass substrate afterwards.The formation of described apparatus for coating is: behind painting photoresist composition on the substrate, can make the substrate rotation with the discharge nozzle type rubbing method.
Then, the temperature of electric hot plate is made as 130 ℃, carry out the 1st drying in 60 seconds by the contiguous oven dry that is about 1mm at interval, then the temperature of electric hot plate is made as 120 ℃, and by being about contiguous the 2nd drying of carrying out for 60 seconds of drying of 0.5mm at interval, forming thickness is the resist tunicle of 1.5 μ m.
Under sodium vapor lamp, observe the surface of resulting resist tunicle, cannot see the usefulness zero of streak generation and represent that the slight △ that produces has obviously produced the usefulness * expression of streak with representing.
(3) corrosion-resisting pattern forms determining of ability
With apparatus for coating (chemical industry society system is answered in Tokyo, goods name TR63000F), sample (positive light anti-etching agent composition) is covered with (1100 * 1250mm on the glass substrate that is formed with the Cr film with the thickness of 100 μ m 2), make it rotation, forming thickness is the coated film of 1.5 μ m.
Then and above-mentioned streak evaluation be identically formed the tunicle that thickness is 1.5 μ m.Afterwards, be used to reproduce 3.0 μ m Xian ﹠amp by being painted with; Space (line﹠amp; The test pattern mask (reticule) of the mask pattern of corrosion-resisting pattern space) is with mirror projectionaligner MPA-600FA (society of Canon system; Ghi line exposing device) this resist tunicle is exposed.Exposure is set at 40mJ/cm 2
Then, contacted for 60 seconds, washed for 30 seconds, and carry out Rotary drying with 23 ℃, tetramethyl ammonium hydroxide (TMAH) aqueous solution of 2.38 quality %.
(embodiment 1～2, comparative example 1～2)
According to the modulation of the ratio shown in the table 1 photo-corrosion-resisting agent composition, carry out the evaluation of confuson disc, drop impression and streak respectively in embodiment and the comparative example.Evaluation result is as shown in table 2.
In addition, form in the ability assessment at the photoresist pattern, on the substrate of each embodiment, 3.0 μ m line﹠amp; The corrosion-resisting pattern of space is all reproduced with institute's sizing, and in the comparative example, because of the Thickness Variation that influence produced of streak, can find that change in size has taken place the part of corrosion-resisting pattern.
Use following (a1)～(a3) as (A) composition.(A) use level of composition is set at 100 mass parts.In the table 1, (//) expression is the potpourri that mixes with the mass ratio of being put down in writing.
(a1): for the mixing phenols of m-cresols/p-cresols=30/70, with formaldehyde is condensation agent, carrying out condensation reaction with the oxalic acid catalyzer according to well-established law and obtain novolac resin, is 5000 novolac resin to the resulting Mw of this novolac resin enforcement separating treatment with the water-methanol mixed solvent.
(a2): for the mixing phenols of m-cresols/p-cresols=30/70, with formaldehyde is condensation agent, carrying out condensation reaction with the oxalic acid catalyzer according to well-established law and obtain novolac resin, is 6300 novolac resin to the resulting Mw of this novolac resin enforcement separating treatment with the water-methanol mixed solvent.
(a3) for the mixing phenols of m-cresols/p-cresols=60/40, with formaldehyde is condensation agent, carrying out condensation reaction with the oxalic acid catalyzer according to well-established law and obtain novolac resin, is 11000 novolac resin to the resulting Mw of this novolac resin enforcement separating treatment with the water-methanol mixed solvent.
Use following (b1) of 10 mass parts as (B) composition.
(b1): above-mentioned formula (I) representative contain phenol hydroxyl compound (molecular weight=376)
Use following (c1) of 29.7 mass parts or (c2) as (C) composition.
(c1): the above-mentioned formula of 1mol (II) representative contain phenol hydroxyl compound and 2.34mol 1, the esterification reaction product of 2-naphthoquinones diazido-5-sulfonic acid chloride.
(c2): two (the 2-methyl-4-hydroxyl-5-cyclohexyl phenyl)-3 of 1mol, 1 of 4-dihydroxy benzenes methylmethane and 2.11mol, the esterification reaction product of 2-naphthoquinones diazido-5-sulfonic acid chloride.
Use following (d1) of 430 mass parts as (D) composition (organic solvent).
(d1)：PGMEA。
Use following (e1)～(e3) as (E) composition (surfactant) according to the ratio of table 1.
(e1) BYK-310 (PVC Star Network ケ ミ-society's system)
(e2) メ ガ Off ア Star Network R-08 (big Japanese ink chemical industry society system)
(e3) メ ガ Off ア Star Network R-06 (big Japanese ink chemical industry society system)
As other compositions,, use 2-(2-hydroxyethyl) pyridine of 0.25 mass parts with respect to the total solids composition.
After described (A)～(D) composition and other composition uniform dissolution, with respect to the total solids composition of removing after (D), the surfactant (E) that adds 0.05 quality % is (when estimating confuson disc and drop impression, add 0.3 quality %), with the aperture is the membrane filter filtration of 0.2 μ m, the modulation positive light anti-etching agent composition.
Table 1
Embodiment (A) (mixing ratio) (Mw) ????(B) ??(C) ????(D) ????(E)
????1 ????a1/a2/a3 ????(2/3/5) ????(8000) ????b1 ??c1 ????d1 ????e1
????2 The same The same ??c1/c2 ??(1/1) The same ????e1
Comparative example
????1 The same The same The same The same ????e2
????2 The same The same The same The same ????e3
Table 2
Embodiment The evaluation of confuson disc and drop impression The evaluation of streak
????80μm ????100μm ????120μm
????1 ????○ ????○ ????○ ????○
????2 ????○ ????○ ????○ ????○
Comparative example
????1 ????× ????× ????△ ????△
????2 ????× ????× ????△ ????△

Claims (14)

1. a positive light anti-etching agent composition is characterized in that, contains: (A) alkali solubility novolac resin, (C) contain naphthoquinones diazido compound, (D) organic solvent and (E) contain following general formula (1)
Wherein, R 1The expression carbon number is 1～3 straight or branched alkyl, R 2The expression carbon number is 1～15 straight or branched alkyl,
Shown repetitive and following general formula (2)
Wherein, R 1The expression carbon number is 1～3 straight or branched alkyl, R 3Expression polyester modification base, the polyester modification polydialkysiloxane class surfactant of shown repetitive.
2. positive light anti-etching agent composition as claimed in claim 1 is characterized in that, also contains (B) molecular weight and be to contain the phenol hydroxyl compound below 1000.
3. positive light anti-etching agent composition as claimed in claim 1 is characterized in that, the polystyrene conversion weight-average molecular weight of described (A) composition is more than 6000.
4. positive light anti-etching agent composition as claimed in claim 1, it is characterized in that (A) composition contains the resin more than a kind (A ') that is selected from the following resin: for the mixing phenols of m-cresols/p-cresols=20/80～40/60 (input ratio) with formaldehyde as condensation agent synthetic, Mw is 4000～10000 novolac resin.
5. positive light anti-etching agent composition as claimed in claim 1, it is characterized in that described (A) composition contains: for the mixing phenols of m-cresols/p-cresols=50/50～70/30 (input ratio) with formaldehyde as condensation agent synthetic, Mw is the novolac resin (A3) more than 9000.
6. positive light anti-etching agent composition as claimed in claim 5, it is characterized in that, described (A) composition contains: as from for the mixing phenols of m-cresols/p-cresols=20/80～40/60 (input ratio) with formaldehyde as condensation agent synthetic, Mw is (A ') composition and described (A3) composition of more than one resins of selecting 4000～10000 the novolac resin, and the mass ratio (A ')/(A3) of the content of the content of described (A ') composition and described (A3) composition is 10/90～60/40.
7. positive light anti-etching agent composition as claimed in claim 2 is characterized in that, described (B) composition contains and contains the phenol hydroxyl compound shown in the following formula (I).
Figure A2004100713720003C1
8. positive light anti-etching agent composition as claimed in claim 1 is characterized in that, described (C) composition contains and contains phenol hydroxyl compound and 1, the esterification reaction product of 2-naphthoquinones diazido sulfoacid compound shown in the following formula (II).
9. positive light anti-etching agent composition as claimed in claim 1 is characterized in that, described (D) composition contains propylene glycol methyl ether acetate.
10. positive light anti-etching agent composition as claimed in claim 1 is characterized in that, also contains 2-(2-hydroxyethyl) pyridine.
11. positive light anti-etching agent composition as claimed in claim 1, it is used for LCD manufacturing process.
12. positive light anti-etching agent composition as claimed in claim 1, it is used for photo-corrosion-resisting agent composition is coated on the molybdenum is operation on the superficial layer that contains of principal ingredient.
13. positive light anti-etching agent composition as claimed in claim 1, it is used for: relatively move the operation of coating positive light anti-etching agent composition on the whole coated face of substrate by making discharge nozzle and substrate.
14. positive light anti-etching agent composition as claimed in claim 1, it is used for: relatively move by making discharge nozzle and substrate, behind coating positive light anti-etching agent composition on the whole coated face of substrate, make the operation of described substrate rotation.
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