CN1588601A - Low valve valve DC-AC separable microelectronic mechanical switch and its producing method - Google Patents
Low valve valve DC-AC separable microelectronic mechanical switch and its producing method Download PDFInfo
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- CN1588601A CN1588601A CN 200410064683 CN200410064683A CN1588601A CN 1588601 A CN1588601 A CN 1588601A CN 200410064683 CN200410064683 CN 200410064683 CN 200410064683 A CN200410064683 A CN 200410064683A CN 1588601 A CN1588601 A CN 1588601A
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Abstract
The invention is a low-threshold AC separable microelectronic switch and its manufacture method, realizing the structure design of a low-threshold voltage AC separable MEMS switch by the design of two driving electrodes and its manufacture method: a. preparing a substrate, using strong HCl and ammonia water to wash a gallium arsenide (GaAs) substrate; b. depositing and photoetching coplanar waveguides and DC driving electrodes on the prepared substrate; c. growing a medium protective layer: growing a SiN insulating layer by PECVD process; d. depositing and photoetching a sacrifice layer: coating a polyimide sacrifice layer on the GaAs substrate; e. sputtering a top pole plate, sputtering a plating Ti/Au/Ti bottom layer on the polyimide layer; f. photoetching and corroding the Ti/Au/Ti bottom layer to form corroded holes; g. plating the Ti/Au/Ti bottom layer; h. releasing the sacrifice layer to form a suspended movable membrane structure.
Description
Technical field
The present invention is the design by two drive electrodes, realizes the structural design of the DC-AC separable mems switch of a kind of low threshold voltage, belongs to microelectromechanical systems (MEMS) technical field.
Background technology
Mems switch has low insertion loss, high isolation, and wide working band easily with high-speed electronic components is integrated and the good linearity, is resembling the strict fields of weight and volume such as radar and wireless telecommunications, has obtained application widely.
Shunt capacitance formula membrane switch is compared its advantage and has been to eliminate the contact loss and little power of connection that direct contact brings between lead with series contact type switch.
Traditional MEMS capacitance-type switch generally adopts fixed beam structure, the mems switch of this structure has following shortcoming: higher threshold voltage, the threshold voltage of the MEMS capacitance-type switch of general size is about 20～50V, and direct current is carried on the same signal line with exchanging.
Summary of the invention
Technical problem: the DC-AC separable microelectronic mechanical switch of low threshold value and the manufacture method thereof that the purpose of this invention is to provide a kind of high reliability, high duplication, low production cost.
Technical scheme: the DC-AC separable microelectronic mechanical switch of low threshold value of the present invention is substrate with the substrate, be provided with the holding wire of a co-planar waveguide in the centre of substrate, be respectively equipped with the ground wire of a co-planar waveguide on the both sides of substrate, between the ground wire of the holding wire of co-planar waveguide and co-planar waveguide, be provided with the DC driven electrode, covering insulating barrier on the middle arrowband part of the holding wire of DC driven electrode and co-planar waveguide, be provided with the movable film of top crown on the top of insulating barrier, the two ends of the movable film of top crown are fixed on the ground wire of co-planar waveguide, are clearance layer between the movable film of insulating barrier and top crown.On the movable film of top crown, can be provided with a shallow grooves as required.
The manufacture method of the DC-AC separable microelectronic mechanical switch of low threshold value of the present invention realizes that based on GaAs MMIC technology its manufacture method is:
A, preparation substrate: clean gallium arsenide substrate with dense HCL and ammoniacal liquor, observe back the alignment mark of throwing the stepping mask aligner on the sheet whether clear;
B, on the substrate of preparing deposit and photoetching co-planar waveguide and DC driven electrode: on gallium arsenide substrate, the sputter AuGeNi/Au of elder generation layer, in the excusing from death generator, peel off this metal level then, generate the structure of the co-planar waveguide and the DC driven electrode of switch at last;
C, somatomedin protective layer: on the holding wire of co-planar waveguide and DC driven electrode with pecvd process growth SiN insulating barrier, and photoetching:
D, deposit and photoetching sacrifice layer: coating polyimide sacrifice layer and photoetching on the GaAs substrate, the photoetching polyimide sacrificial layer only keeps the sacrifice layer under the movable film of top crown, and forms a scrobicula in the middle of sacrifice layer;
E, sputter top crown: the Ti/Au/Ti bottom layer that sputter is used to electroplate on polyimide layer;
F, photoetching are also corroded the Ti/Au/Ti bottom layer, form etch pit;
G, at Ti/Au/Ti bottom layer electrogilding;
H, releasing sacrificial layer: remove residual photoresist with acetone earlier, use the polyimide sacrificial layer under the developing solution dissolution switch beam then, and dewater with absolute ethyl alcohol.Form the movable membrane structure that suspends.
Distinguish whether to be the standard of this structure be:
(a) structure is respectively the movable film of top crown from top to bottom; Clearance layer; Insulating barrier; The holding wire of co-planar waveguide, the ground wire of co-planar waveguide and DC driven electrode; Substrate.
(b) at two DC driven electrodes of the holding wire two ends of built-in beam design;
(c) on movable film, can design a scrobicula as required, film is well contacted with insulating barrier when OFF state, offset the stress of film.
Satisfy above structure and be our designed structure.
When switch conduction, signal is directly exported via holding wire, and when the external dc driving voltage, switch beam is offset under the effect of electrostatic force.When direct voltage increased to a certain value, switch beam and insulating barrier contacted, and were in the pass off-state, and form bigger coupling capacitance between switch beam and co-plane waveguide holding wire this moment, and signal is coupled to ground, and switch becomes " pass " attitude by " opening " attitude.
Beneficial effect: compare with common membrane switch, advantage of the present invention is:
1. the driving DC voltage of switch can be carried on the electrode at holding wire two ends, thereby has reduced threshold voltage;
2. can exchange separately by direct current;
3. improved the linearity of switch;
4. this structure can be in conjunction with planar membrane beam, and folded beam and tee girder use together;
5. there is not sticking phenomenon;
Handle contact problems with scrobicula in 6 technologies;
7. be easy to make single pole multiple throw;
8. manufacturing process is simple, with GaAs MMIC process compatible.
The characteristics that can divide membrane switch structure in parallel based on above low threshold value orthogonal stream, the present invention has well solved the threshold voltage height, orthogonal stream is carried in the problem on the same signal line, and be easy to realize high reliability, high duplication, the low production cost of device well satisfy the basic demand of microelectronics system to device.Therefore, low threshold value orthogonal stream can divide the structure of membrane switch in parallel to have using value and vast market potentiality preferably.
Low threshold voltage orthogonal flow point from MEMS (microelectromechanical systems) switch have following feature:
1. low-loss, high-isolation, working band wide 2. and GaAs MMIC process compatible also can be with high-speed electronic components integrated 3. owing to designed two extra electrodes, like this when reducing switching threshold voltage, the signal direct current is exchanged separately, improve the linearity of switch.In addition, the manufacture craft of the mems switch of this low threshold voltage is very simple.Solved original realization mems switch structure at material, technology, reliability, the problem of all many-sides such as repeatability and production cost.
Description of drawings
Fig. 1 be low threshold value orthogonal flow point from the mems switch vertical view.
Fig. 2 be low threshold value orthogonal flow point from the mems switch profile.
Fig. 3 be low threshold value orthogonal flow point from mems switch vertical view (removing upper layer film).
Fig. 4 is the insertion loss and the return loss schematic diagram of switch.
Fig. 5 is the isolation and the return loss schematic diagram of switch.
Fig. 6 is the profile of the membrane switch of band scrobicula.
Fig. 7 is the vertical view of the membrane switch of band scrobicula.
Specific embodiments
The DC-AC separable mems switch of low threshold value of the present invention, with substrate 7 is substrate, be provided with the holding wire 4 of a co-planar waveguide in the centre of substrate 7, be respectively equipped with the ground wire 6 of a co-planar waveguide on the both sides of substrate 7, between the ground wire 6 of the holding wire 4 of co-planar waveguide and co-planar waveguide, be provided with DC driven electrode 5, covering insulating barrier 3 on the middle arrowband part of the holding wire 4 of DC driven electrode 5 and co-planar waveguide, be provided with the movable film 1 of top crown on the top of insulating barrier 3, the two ends of the movable film 1 of top crown are fixed on the ground wire 6 of co-planar waveguide, are clearance layer 2 between the movable film 1 of insulating barrier 3 and top crown.On the movable film 1 of top crown, can be provided with a shallow grooves 8.
As follows based on low concrete processing step of the DC-AC separable mems switch of threshold value of GaAS technology realization and parameter:
1. preparation substrate: the substrate of micro-machinery switch is because what select for use is that GaAs returns the throwing sheet, so must clean with dense HCL and ammoniacal liquor, whether the alignment mark that will splash back the stepping mask aligner on the throwing sheet simultaneously is clear.
2. deposit and photoetching co-planar waveguide and DC driven electrode: on gallium arsenide substrate, the AuGeNi/Au layer of the sputter 800/300/2200A of elder generation, in the excusing from death generator, peel off this metal level then, generate the co-planar waveguide and DC driven electrode (5) structure of switch at last.Co-planar waveguide is of a size of 84-140-84um, inhomogeneous section length 340um, and inhomogeneous district co-planar waveguide is of a size of 300-140-300um.
3. somatomedin protective layer: on the holding wire and DC driven electrode of co-planar waveguide, the top SiN insulating barrier of built-in beam, and photoetching with pecvd process growth 1000A.The width of insulating barrier is 120um.
4. deposit and photoetching sacrifice layer: coating polyimide sacrifice layer and photoetching on the GaAs substrate.The thickness of polyimide sacrificial layer has determined the switch pole sheet separation, is chosen as 2um.The rotating speed that this can be by regulating photoresist spinner and the concentration of polyimide solution change the thickness of sacrifice layer.The photoetching polyimide sacrificial layer only keeps the sacrifice layer under the switch beam, and forms a scrobicula in the middle of beam, to form good contact in OFF state.
5. sputter top crown: the down payment Ti/Au/Ti=500/1500/300A that sputter is used to electroplate on polyimide layer
6. photoetching and corrode the Ti/Au/Ti bottom layer forms the etch pit etch pit and is of a size of 8 * 8um,
7, electrogilding: at Ti/Au/Ti bottom layer electrogilding, the electrogilding layer thickness is 1.4um in 55 cyano group solution, and beam length L is 380um, deck-siding 60um,
8, releasing sacrificial layer: remove residual photoresist with acetone earlier, use the polyimide sacrificial layer under the developing solution dissolution switch beam then, and dewater with absolute ethyl alcohol.Form the switch beam structure that suspends.
In addition, note also some problems in the whole technical proposal, comprising: the drive electrode very little design of ground roll jig together, this is for the realization of integral device structure, the size of threshold voltage, and nonlinear characteristic all is to have crucial meaning; The selection of sacrifice layer, this has determined to discharge the degree of roughness of rear surface and the capacitance of OFF state, is related to the isolation of switch; Can on the top crown film, design a scrobicula so that the top crown nick to offset the residual stress of film, well contacts with bottom crown when making the film OFF state, improve isolation; The top crown film can use flat film, also can use folded beam or T type beam, with the threshold voltage of further reduction switch.
Make a general survey of the technical process of the DC-AC separable mems switch of this low threshold value of whole realization, wherein without any special material is not introduced any complicated special technology yet, and is compatible mutually with GaAs MMIC technology fully.Therefore, use the threshold voltage that the DC-AC separable mems switch structure of low threshold value among the present invention can reduce switch, realize the orthogonal flow point from, improve the characteristic of switch.
Claims (3)
1, the DC-AC separable microelectronic mechanical switch of a kind of low threshold value, it is characterized in that this microelectronic mechanical switch is substrate with substrate (7), be provided with the holding wire (4) of a co-planar waveguide in the centre of substrate (7), be respectively equipped with the ground wire (6) of a co-planar waveguide on the both sides of substrate (7), between the ground wire (6) of the holding wire (4) of co-planar waveguide and co-planar waveguide, be provided with DC driven electrode (5), covering insulating barrier (3) on the middle arrowband part of the holding wire (4) of DC driven electrode (5) and co-planar waveguide, be provided with the movable film of top crown (1) on the top of insulating barrier (3), the two ends of the movable film of top crown (1) are fixed on the ground wire (6) of co-planar waveguide, are clearance layer (2) between insulating barrier (3) and the movable film of top crown (1).
2, the DC-AC separable microelectronic mechanical switch of low threshold value according to claim 1 is characterized in that being provided with a shallow grooves (8) on the movable film of top crown (1).
3, the manufacture method of the DC-AC separable microelectronic mechanical switch of a kind of low threshold value as claimed in claim 1 is characterized in that the realization of this microelectronic mechanical switch based on GaAs technology, and its manufacture method is:
A, preparation substrate: clean gallium arsenide substrate (7) with dense HCL and ammoniacal liquor, observe back the alignment mark of throwing the stepping mask aligner on the sheet whether clear;
B, go up deposit and photoetching co-planar waveguide and DC driven electrode (5): on gallium arsenide substrate (7) at the substrate of preparing (7), the sputter AuGeNi/Au of elder generation layer, in the excusing from death generator, peel off this metal level then, generate the structure of the co-planar waveguide and the DC driven electrode (5) of switch at last:
C, somatomedin protective layer: holding wire (4) and DC driven electrode (5) at co-planar waveguide are gone up the insulating barrier with pecvd process growth SiN, and photoetching;
D, deposit and photoetching sacrifice layer: go up coating polyimide sacrifice layer and photoetching at GaAs substrate (7), the photoetching polyimide sacrificial layer only keeps the sacrifice layer under the movable film of top crown (1), and forms a scrobicula in the middle of sacrifice layer;
E, sputter top crown: the Ti/Au/Ti bottom layer that sputter is used to electroplate on polyimide layer;
F, photoetching are also corroded the Ti/Au/Ti bottom layer, form etch pit;
G, at Ti/Au/Ti bottom layer electrogilding;
H, releasing sacrificial layer: remove residual photoresist with acetone earlier, use the polyimide sacrificial layer under the developing solution dissolution switch beam then, and dewater with absolute ethyl alcohol.Form movable film (1) structure that suspends.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100646833A CN1295728C (en) | 2004-09-20 | 2004-09-20 | Low valve valve DC-AC separable microelectronic mechanical switch and its producing method |
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| CNB2004100646833A CN1295728C (en) | 2004-09-20 | 2004-09-20 | Low valve valve DC-AC separable microelectronic mechanical switch and its producing method |
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| CN1588601A true CN1588601A (en) | 2005-03-02 |
| CN1295728C CN1295728C (en) | 2007-01-17 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100389474C (en) * | 2006-04-17 | 2008-05-21 | 东南大学 | Radio-frequency micro-electronic mechanical double-film parallel capacitive type switch and preparation method thereof |
| CN103972612A (en) * | 2014-04-01 | 2014-08-06 | 苏州锟恩电子科技有限公司 | Parallel contact-type RF MEMS (radio frequency micro electromechanical system) switch |
| CN105788971A (en) * | 2016-03-16 | 2016-07-20 | 上海交通大学 | Silicon substrate based compact MEMS capacitive radio-frequency switch and production method |
| CN115377631A (en) * | 2022-09-16 | 2022-11-22 | 北京邮电大学 | Radio frequency MEMS switch |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6307169B1 (en) * | 2000-02-01 | 2001-10-23 | Motorola Inc. | Micro-electromechanical switch |
| US20040031670A1 (en) * | 2001-10-31 | 2004-02-19 | Wong Marvin Glenn | Method of actuating a high power micromachined switch |
| FR2835963B1 (en) * | 2002-02-11 | 2006-03-10 | Memscap | MICRO-COMPONENT OF THE MICRO-SWITCH TYPE AND METHOD FOR MANUFACTURING SUCH MICROCOMPUTER |
| JP3818176B2 (en) * | 2002-03-06 | 2006-09-06 | 株式会社村田製作所 | RFMEMS element |
| JP3783635B2 (en) * | 2002-03-08 | 2006-06-07 | 株式会社村田製作所 | Shunt switch element |
| US6657525B1 (en) * | 2002-05-31 | 2003-12-02 | Northrop Grumman Corporation | Microelectromechanical RF switch |
| ATE520140T1 (en) * | 2002-09-16 | 2011-08-15 | Imec | SWITCHED CAPACITY |
| CN2729035Y (en) * | 2004-09-20 | 2005-09-28 | 东南大学 | Low-threshold direct DC separatable microelectronic mechanical switch |
-
2004
- 2004-09-20 CN CNB2004100646833A patent/CN1295728C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100389474C (en) * | 2006-04-17 | 2008-05-21 | 东南大学 | Radio-frequency micro-electronic mechanical double-film parallel capacitive type switch and preparation method thereof |
| CN103972612A (en) * | 2014-04-01 | 2014-08-06 | 苏州锟恩电子科技有限公司 | Parallel contact-type RF MEMS (radio frequency micro electromechanical system) switch |
| CN105788971A (en) * | 2016-03-16 | 2016-07-20 | 上海交通大学 | Silicon substrate based compact MEMS capacitive radio-frequency switch and production method |
| CN115377631A (en) * | 2022-09-16 | 2022-11-22 | 北京邮电大学 | Radio frequency MEMS switch |
| CN115377631B (en) * | 2022-09-16 | 2023-11-03 | 北京邮电大学 | Radio frequency MEMS switch |
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| CN1295728C (en) | 2007-01-17 |
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