CN106298371A - A kind of radio-frequency micro electromechanical switch based on superficial semiconductor technique and preparation method thereof - Google Patents
A kind of radio-frequency micro electromechanical switch based on superficial semiconductor technique and preparation method thereof Download PDFInfo
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- CN106298371A CN106298371A CN201610772249.3A CN201610772249A CN106298371A CN 106298371 A CN106298371 A CN 106298371A CN 201610772249 A CN201610772249 A CN 201610772249A CN 106298371 A CN106298371 A CN 106298371A
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- radio
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H49/00—Apparatus or processes specially adapted to the manufacture of relays or parts thereof
Abstract
The present invention relates to a kind of radio-frequency micro electromechanical switch based on superficial semiconductor technique and preparation method thereof.Radio-frequency micro electromechanical switch is made up of substrate, electrode contact hole, drive electrode, isolation resistance and passivation layer, coplanar ripple transmission line, co-planar waveguide ground wire, anchor point, cantilever beam structure, upper contact point, bow-shaped structural, through hole etc..The preparation method of radio-frequency micro electromechanical switch specifically includes that the processing steps such as substrate cleaning, prepared by drive electrode, prepared by isolation resistance, prepared by coplanar waveguide transmission line figure, prepared by sacrifice layer, prepared by passivation layer and prepared by cantilever beam structure, sacrificial layer structure release, make manufacture process simple and easy to control, improve and produce yield rate, improve mechanical property and the electric property index of radio-frequency micro electromechanical switch simultaneously.
Description
Technical field
The present invention relates to a kind of radio-frequency micro electromechanical switch (RF MEMS switch) technical field, particularly relate to a kind of based on
Radio-frequency micro electromechanical switch of superficial semiconductor technique and preparation method thereof.
Background technology
RF mems switch has the performance of excellence at insertion loss, isolation, frequency and the aspect such as linear, leads at satellite
The systems such as letter, navigation and radar are widely applied.Compared with traditional PIN and FET microwave switch device, mems switch
Not only there is the microwave property that high-isolation, low-loss, filter with low insertion loss, high linearity etc. are excellent, there is batch making simultaneously, be prone to
The feature mutually integrated with advanced microwave, radio circuit, is to realize miniaturization, and low cost, high performance microwave transmitting and receiving front end is
The key technology of system.
RF mems switch is divided into beam type switch, clamped fine strain of millet switch by frame for movement；According to switch at radio circuit
In connected mode, be divided into series and parallel；And be capacitance coupling type switch and ohm according to switch contact model split
Touch switch；Electrostatic, electromagnetism, electric heating, piezoelectricity, shape memory metal can be divided into again to switch, at present according to switch drive mechanism
Study and apply most switching for electrostatic drive.The tandem switch of traditional electrostatic drive generally by metal cantilever beams, under
Pulling electrode and holding wire three part with metal contact form.Its operation principle is: after applying driving voltage, and metal hangs
The electrical contact between contact point on arm beam and CPW transmission line, thus realize the conducting of radiofrequency signal；When driving voltage is cancelled
Time, metal cantilever beams is returned to initial isolation due to the effect of elastic force, and metal cantilever beams disconnects with contact point, makes to penetrate
Frequently signal isolation.
The most conventional RF mems switch preparation technology there is also certain shortcoming.First, the RF MEMS of document report
Switching on voltage the highest, be very restricted in application, the cut-in voltage reducing RF mems switch becomes
Current research emphasis.Secondly, the preparation of RF mems switch contact is usually contact and uses two-step process system with CPW transmission line
Standby, contact resistance can be there is, the series resistance causing switch is bigger；It addition, the minimizing technology of the plating seed layer of routine is adopted more
With corrosion, this technique can have sideetching effect to transmission line, can cause the combination pine of cantilever beam anchor point and substrate time serious
Dynamic, even result in cantilever beam and collapse.Meanwhile, acid corrosive liquid also can have a certain degree of destruction to passivation layer, causes passivation
The defects such as pin hole occur in Ceng；Present in these common process, problem not only makes manufacturing process complicated, and yield rate is low.Institute
With, optimize RF mems switch structure and manufacturing process, improve and produce yield rate.Start with in terms of technique and material selection simultaneously,
Improve performance indications, be a huge challenge facing of RF mems switch manufacturing industry.
Summary of the invention
It is an object of the invention to provide a kind of radio-frequency micro electromechanical based on superficial semiconductor technique switch and preparation side thereof
Method, on the basis of conventional RF micro-electromechanical switch, proposes new radio-frequency micro electromechanical construction of switch and process thereof, makes to manufacture
Journey is simple and easy to control, improves and produces yield rate, improves mechanical property and the electric property index of radio-frequency micro electromechanical switch simultaneously.
For realizing above-mentioned technical purpose, the present invention proposes a kind of radio-frequency micro electromechanical based on superficial semiconductor technique and switchs:
This switch includes: substrate；It is provided with isolation resistance, described isolation resistance two ends and electrode contact hole over the substrate
It is connected with drive electrode；Described isolation resistance, electrode contact hole and drive electrode are provided with passivation layer；On described passivation layer
It is provided with coplanar waveguide transmission line, co-planar waveguide ground wire；Described co-planar waveguide ground wire is provided with anchor point；Described anchor point is tied with cantilever beam
Structure connects；Described cantilever beam structure is provided with contact point, through hole；Described cantilever beam structure is bow-shaped structural, and described cantilever beam is tied
Arch concave configuration on structure is corresponding with drive electrode.
Further, described substrate is the sapphire Al that tangent loss is lower2O3。
Beneficial effect: use sapphire Al2O3As the substrate of radio-frequency micro electromechanical switch, compared with traditional Si substrate, have
Lower electrical conductivity and loss tangent, can largely reduce the insertion loss of RF mems switch.
Further, isolation resistance uses the TaN material of reactive sputtering, and its two ends connect electrode contact hole respectively and drive electricity
Pole.
Further, passivation layer is silicon nitride film.
Further, cantilever beam structure uses Au material, and has manhole on cantilever beam structure.
Further, cantilever beam structure uses a kind of bow-shaped structural, has under arch with the position corresponding to drive electrode
Recessed structure.
Further, cantilever beam structure is provided with contact point, the signal output of described contact point correspondence coplanar waveguide transmission line
End.
The present invention proposes the preparation method of a kind of radio-frequency micro electromechanical based on superficial semiconductor technique switch, the tool of the method
Body step is:
Step 1, cleans substrate；
Step 2, forms electrode contact hole, drive electrode, isolation resistance and passivation layer over the substrate；
Step 3, forms coplanar waveguide transmission line, co-planar waveguide ground wire, anchor point, cantilever beam structure on described passivation layer；
Step 4, forms contact point, arch concave configuration, through hole on described cantilever beam structure.
Further, described isolation resistance uses the TaN material of reactive sputtering, and its two ends connect electrode contact hole respectively and drive
Moving electrode.
Beneficial effect: utilize the highly resistant material TaN of reactive sputtering as built-in isolation resistance, to radiofrequency signal with drive electricity
Pole bypass is isolated, it is to avoid radiofrequency signal is coupled to ground by drive electrode.
Further, use and be lithographically formed coplanar waveguide transmission line figure, then sputtering NiCr or Au metal seed layer, again
Thick photoresist is used to thicken Au layer as plating mask, plating, with acetone ultrasonic removal plating mask, realize Seed Layer simultaneously
Stripping, it is achieved coplanar waveguide transmission line graphical, finally prepare coplanar waveguide transmission line.
Beneficial effect: plating seed layer graphically use stripping technology, compared with traditional caustic solution, it is to avoid side
The impact on passivation layer to corrosion and acid metal erosion liquid.
Further, anchor point preparation method in described step 3: at co-planar waveguide ground wire upper surface spin coating the first sacrifice layer is right
First sacrifice layer carries out 120 DEG C of precuring and processes, and photolithography patterning, forms cantilever beam by being developed in the first sacrifice layer
Anchor point figure, then carry out 250 DEG C of cured, finally prepare anchor point.
Further, in described step 3, the preparation method of contact point and arch concave configuration is: spin coating the second sacrifice layer, right
Second sacrifice layer carries out 120 DEG C of precuring and processes, and photolithography patterning, ties by being developed in the second sacrifice layer formation cantilever beam
Arch concave configuration on structure and the 3-D graphic of contact point, then carry out 250 DEG C of solidifications, finally prepare contact point and arch is recessed
Structure.
Beneficial effect: the contact point of switch and the preparation of arch concave configuration, at developer solution before and after utilizing sacrifice layer to solidify
The change of middle dissolubility, uses two-layer sacrifice layer process, forms anchor point figure, contact point figure, arch concave configuration figure etc..
Prepared by the present invention, upper contact point is integrally manufactured with cantilever beam structure, there is not contact resistance, can substantially reduce radio frequency microcomputer
The series resistance of electric switch；Arch concave configuration on cantilever beam structure, corresponding with the position of drive electrode, this structure sets
Meter, make while the distance keeping contact point and transmission line is constant drive electrode and cantilever beam structure distance closer to, reduce
Distance between drive electrode and cantilever beam structure, so can make switch on the premise of isolation does not changes, reduce
Radio-frequency micro electromechanical switches on voltage.
Accompanying drawing explanation
Fig. 1 is the radio-frequency micro electromechanical switch profile of the present invention.
1, substrate；2, electrode contact hole；3, drive electrode；4, isolation resistance；5, passivation layer；6, coplanar waveguide transmission line；
7, co-planar waveguide ground wire；8, anchor point；9, cantilever beam structure；10, through hole；11, contact point；12, arch concave configuration
Detailed description of the invention
Being described principle and the feature of the present invention below in conjunction with accompanying drawing, example is served only for explaining the present invention, and
Non-for limiting the scope of the present invention.
The present invention provides a kind of radio-frequency micro electromechanical based on superficial semiconductor technique switch and preparation side thereof as shown in Figure 1
Method, including: substrate 1 is provided；The electrode contact hole 2 that is deposited on substrate 1, drive electrode 3, isolation resistance 4, passivation layer 5 etc.；?
The coplanar waveguide transmission line 6 of preparation, co-planar waveguide ground wire 7, anchor point 8, cantilever beam structure 9 etc. on described passivation layer 5；And institute
State the through hole 10 on cantilever beam structure 9, contact point 11, arch concave configuration 12 etc..
Technical solution of the present invention uses sapphire Al2O3As the substrate of radio-frequency micro electromechanical switch, with traditional Si substrate phase
Ratio, has lower electrical conductivity and loss tangent, can largely reduce the insertion loss of radio-frequency micro electromechanical switch；Switch
Contact point 11 and the preparation of arch concave configuration 12, utilize sacrifice layer solidification before and after the change of dissolubility in developer solution, adopt
Use two-layer sacrifice layer process, form anchor point 8 figure, contact point 11 figure, arch concave configuration 12 figure etc..This arch is recessed
The design of structure 12, can make switch on the premise of the change that isolation does not occurs, reduce radio-frequency micro electromechanical and switch on
Voltage；Plating seed layer graphically use stripping technology, compared with traditional caustic solution, it is to avoid sideetching and acidity
The impact on passivation layer of the metal erosion liquid.Meanwhile, utilize the highly resistant material of reactive sputtering as built-in isolation resistance, to radio frequency
Signal is isolated with drive electrode bypass, it is to avoid radiofrequency signal is coupled to ground by drive electrode.
Isolation resistance 4 is formed by the TaN material of reactive sputtering, in order to realize the high value of TaN lines, it is desirable to sputtered
TaN film rectangular resistance is more than 1000 electricity sheet resistances, and reacting gas is by a certain proportion of Ar gas and a certain proportion of N2 gas group
Becoming, the thickness of the TaN thin film of experiment isSheet resistance is 1100 electricity sheet resistances.
The technical scheme used that makes of coplanar waveguide transmission line 6 is: first, by photolithography patterning, make co-planar waveguide
The photoresist of transmission line 6 graph position is removed clean, then uses magnetron sputtering layer of Ni Cr/Au alloy firm as plating
Seed Layer, thickness is respectivelyWithAgain by AZ series thick photoresist, form plating mask,
After having electroplated, remove plating mask, and the method using acetone to peel off is graphical by Seed Layer.
As further optimizing, cantilever beam structure 9 uses Au material, and thickness is 6-10um, at the table of cantilever beam structure 9
Face is provided with the through hole 10 running through cantilever beam, and arranging through hole 10 is to reduce air damping when cantilever beam structure 9 moves up and down,
Increase switching speed, reduce cut-in voltage；The existence of through hole 10 makes cantilever beam structure 9 during release, increases more oxygen
Plasma and the contact area of sacrifice layer, accelerating structure discharges；And being arranged on of cantilever beam through hole 10 makes to a certain extent
After cantilever beam structure 9 release, internal residual stress reduces, and reduces the Young's modulus of cantilever beam structure 9 simultaneously, thus reduces and penetrate
Frequently the cut-in voltage of micro-electromechanical switch.
The following is radio-frequency micro electromechanical of the present invention switch step of preparation process:
S1, cleans substrate 1；
S2, the preparation of isolation resistance 4: substrate is carried out photoetching treatment, remove light needing the position doing high resistant bias line
Photoresist, other position photoresists retain, and send in magnetic control platform afterwards, sputter TaN thin film, thickness.Sputtering completes
After, put into immersion enough time in acetone soln, be then placed in ultrasonic container peeling off, afterwards after alcohol washes, dry up；
S3, the preparation of drive electrode 3: the substrate having prepared high resistant bias line is carried out photoetching treatment, drives at needs
Photoresist is removed in the position of electrode 3, and other position photoresists retain, then deposited by electron beam evaporation platform evaporation Ti/Al thin film, thickness
ForDrive electrode 3 is formed after stripping；
S4, the preparation of passivation layer 5: due to the existence of metal, use PECVD low temperature to prepare passivation layer 4 (silicon nitride), thickness
For
S5, prepared by coplanar waveguide transmission line 6: be lithographically formed coplanar waveguide transmission line figure, and use magnetron sputtering to prepare
NiCr/Au metal structure Seed Layer, thickness isWithConsider the metal thickness impact on performance simultaneously, use AZ
Series thick photoresist, as plating mask, thickeies Au layer, coplanar waveguide transmission line gross thickness 2um；
S6, Seed Layer is removed: after electroplating technology completes, with acetone ultrasonic removal plating mask, realize Seed Layer simultaneously
Stripping, it is achieved the preparation of coplanar waveguide transmission line；
S7, Etch Passivation 5: be lithographically formed the figure of bottom electrode contact hole 2, utilize dry etching to silicon nitride passivation
Perform etching, remove photoresist, form electrode contact hole 2；
S8, prepared by anchor point 8: at the first sacrifice layer that co-planar waveguide ground wire 7 upper surface spin coating thickness is 2um, then to
One sacrifice layer carries out 120 DEG C of precuring and processes, and wherein sacrifice layer is chemical material, and the present invention uses polyamides Asia and pacifies as sacrificial
Domestic animal layer, and photolithography patterning, by being developed in anchor point 8 figure forming cantilever beam in the first sacrifice layer, 250 DEG C of solidifications, remove photoresist；
S9, contact point 11 and the preparation of arch concave configuration: spin coating thickness is second sacrifice layer of 0.5um, then to
Two sacrifice layers carry out 120 DEG C of precuring and process, and photolithography patterning, by being developed in the second sacrifice layer on formation cantilever beam
Arch concave configuration 12 and the 3-D graphic of contact point 11,250 DEG C of solidifications, remove photoresist；
S10, prepared by cantilever beam structure 9: the sacrifice layer last time after hardening passes through photoetching Seed Layer figure, sputtering
NiCr/Au Seed Layer, photoetching cantilever beam plating mask, then plating thickening processes, and uses same step S6.Technique realizes outstanding
Arm beam graphical, this step can realize the preparation of through hole 10 on cantilever beam；
S11, structure release: oxygen plasma etch technology removes sacrifice layer, it is achieved structure release.
Above-mentioned lift-off technology used is: first do the figure of photoresist on substrate, by photolithographic exposure, optionally
Remove photoresist in specific region, then by coating technique, cover one layer of required metal or dielectric film thereon, then
By acetone soln, making the photoresist do not removed be dissolved in acetone soln, depart from substrate therewith also has above photoresist
Metal or dielectric film, last remaining original thin film prepared by local existence removing photoresist.
In this manual, the schematic representation of above-mentioned term is necessarily directed to identical embodiment or example.
And, the specific features of description, structure, material or feature can with in one or more embodiments in office or example with suitably
Mode combines.Additionally, in the case of the most conflicting, those skilled in the art can be by the difference described in this specification
The feature of embodiment or example and different embodiment or example is combined and combines.
Although above it has been shown and described that embodiments of the invention, it is to be understood that above-described embodiment is example
Property, it is impossible to being interpreted as limitation of the present invention, those of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, revises, replaces and modification.
Claims (12)
1. radio-frequency micro electromechanical based on a superficial semiconductor technique switch, it is characterised in that this switch includes: substrate (1)；?
Described substrate (1) is provided with isolation resistance (4), described isolation resistance (4) two ends and electrode contact hole (2) and drive electrode (3)
It is connected；Described isolation resistance (4), electrode contact hole (2) and drive electrode (3) are provided with passivation layer (5)；At described passivation layer
(5) coplanar waveguide transmission line (6), co-planar waveguide ground wire (7) it are provided with；Described co-planar waveguide ground wire (7) is provided with anchor point (8)；
Described anchor point (8) connects with cantilever beam structure (9)；Described cantilever beam structure (9) is provided with contact point (11), through hole (10)；Institute
Stating cantilever beam structure (9) is bow-shaped structural, the arch concave configuration (12) on described cantilever beam structure (9) and drive electrode (3)
Corresponding.
Radio-frequency micro electromechanical the most according to claim 1 switchs, it is characterised in that the material of described substrate (1) is sapphire
Al2O3。
Radio-frequency micro electromechanical the most according to claim 1 switchs, it is characterised in that isolation resistance (4) uses reactive sputtering
TaN material.
Radio-frequency micro electromechanical the most according to claim 1 switchs, it is characterised in that passivation layer (5) is silicon nitride film.
Radio-frequency micro electromechanical the most according to claim 1 switchs, it is characterised in that cantilever beam structure (9) uses Au material, and
And there is on cantilever beam structure (9) manhole (10).
Radio-frequency micro electromechanical the most according to claim 5 switchs, it is characterised in that described cantilever beam structure (9) is provided with and connects
Contact (11), the signal output part of the corresponding coplanar waveguide transmission line (6) of described contact point (11).
7. the preparation method of radio-frequency micro electromechanical based on a superficial semiconductor technique switch, it is characterised in that this preparation method
Comprise the steps:
Step 1, cleans substrate (1)；
Step 2, at described substrate (1) upper formation electrode contact hole (2), drive electrode (3), isolation resistance (4) and passivation layer
(5)；
Step 3, forms coplanar waveguide transmission line (6), co-planar waveguide ground wire (7), anchor point (8), cantilever on described passivation layer (5)
Girder construction (9)；
Step 4, forms contact point (11), arch concave configuration (12) through hole (10) on described cantilever beam structure (9).
The preparation method of radio-frequency micro electromechanical the most according to claim 7 switch, it is characterised in that described isolation resistance (4)
Using the TaN material of reactive sputtering, its two ends connect electrode contact hole (2) and drive electrode (3) respectively.
The preparation method of radio-frequency micro electromechanical the most according to claim 7 switch, it is characterised in that formed in described step 3
Coplanar waveguide transmission line (6) method is: uses and is lithographically formed coplanar waveguide transmission line (6) figure, then sputtering NiCr or Au gold
Belong to Seed Layer, be again with thick photoresist and thicken Au layer as plating mask, plating, with acetone ultrasonic removal plating mask, same
The Shi Shixian stripping to Seed Layer, it is achieved coplanar waveguide transmission line (6) graphical, finally prepares coplanar waveguide transmission line (6).
The preparation method of radio-frequency micro electromechanical the most according to claim 7 switch, it is characterised in that anchor point in described step 3
(8) preparation method is: at co-planar waveguide ground wire (7) upper surface spin coating the first sacrifice layer, the first sacrifice layer is carried out 120 DEG C pre-solid
Change processes, and photolithography patterning, by being developed in anchor point (8) figure forming cantilever beam in the first sacrifice layer, then carries out 250 DEG C
Cured, finally prepares anchor point (8).
The preparation method of 11. radio-frequency micro electromechanical according to claim 7 switches, it is characterised in that described step 3 contact point
(11) and the preparation method of arch concave configuration (12) is: spin coating the second sacrifice layer, the second sacrifice layer is carried out 120 DEG C of precuring
Process, and photolithography patterning, by being developed in the second sacrifice layer the arch concave configuration (12) formed on cantilever beam structure (9)
With the 3-D graphic of contact point (11), then carry out 250 DEG C of solidifications, finally prepare contact point (11) and arch concave configuration (12).
The preparation method of 12. radio-frequency micro electromechanical according to claim 7 switches, it is characterised in that described step 4 cantilever beam
In structure (9) and cantilever beam, the preparation method of through hole (10) is: the sacrifice layer last time after hardening passes through photoetching Seed Layer figure
Shape, then sputtering NiCr/Au Seed Layer, photoetching cantilever beam plating mask, then plating thickening processes, and finally prepares cantilever
Through hole (10) in girder construction (9) and cantilever beam.
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| CN108133869A (en) * | 2017-12-25 | 2018-06-08 | 苏州希美微纳系统有限公司 | Prepare the method and micro electro-mechanical system switch of high-performance radio-frequency micro electro-mechanical system switch |
| CN109911845A (en) * | 2019-03-07 | 2019-06-21 | 无锡众创未来科技应用有限公司 | A kind of manufacturing method of low-power consumption electrostatic drive formula RF mems switch |
| CN110329988A (en) * | 2019-07-17 | 2019-10-15 | 中国电子科技集团公司第五十四研究所 | A kind of compound sacrificial layer preparation method of RF-MEMS switch |
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| CN110931288A (en) * | 2019-11-27 | 2020-03-27 | 电子科技大学 | Manufacturing method of parallel double-contact switch |
| CN110931288B (en) * | 2019-11-27 | 2021-08-06 | 电子科技大学 | Manufacturing method of parallel double-contact switch |
| CN111180837A (en) * | 2020-01-19 | 2020-05-19 | 中国电子科技集团公司第五十五研究所 | Anti-adhesion radio frequency mechanical switch and preparation method thereof |
| CN114203487A (en) * | 2021-12-10 | 2022-03-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Radio frequency MEMS switch and manufacturing method thereof |
| CN114551166A (en) * | 2022-02-22 | 2022-05-27 | 北京京东方光电科技有限公司 | Micro-electro-mechanical system switch and preparation method thereof |
| CN115662847A (en) * | 2022-11-16 | 2023-01-31 | 山东科技大学 | Series contact type radio frequency MEMS switch based on X wave band and manufacturing method thereof |
| CN116387094A (en) * | 2023-06-02 | 2023-07-04 | 中国工程物理研究院电子工程研究所 | Integrated quartz micro-switch |
| CN116387094B (en) * | 2023-06-02 | 2023-08-25 | 中国工程物理研究院电子工程研究所 | Integrated quartz micro-switch |
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