CN1585122A - Composite scab structure and producing method thereof - Google Patents
Composite scab structure and producing method thereof Download PDFInfo
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- CN1585122A CN1585122A CNA2004100452429A CN200410045242A CN1585122A CN 1585122 A CN1585122 A CN 1585122A CN A2004100452429 A CNA2004100452429 A CN A2004100452429A CN 200410045242 A CN200410045242 A CN 200410045242A CN 1585122 A CN1585122 A CN 1585122A
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- substrate
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- contact mat
- projection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The compound cam structure is composed of a base plate, a contacting pad located on the base plate, a main body comprised of the polymer on the contacting pad, a conducting socket in the main body, which interpenetrates the main body. The conducting layer connects with the conducting pad via the conducting socket and the protecting layer on the base plate covers part of the contacting pad.
Description
Technical field
The present invention relates to a kind of structure packing technique of integrated circuit, particularly relate to a kind of composite projection structure and manufacture method that is applied in the structure packing technique between integrated circuit and display.
Background technology
In some existing electronic installations, being connected between element and main body circuit is to see through conducting film (for example aeolotropic conductive is called for short ACF) to carry out.Aeolotropic conductive ACF mixes with dielectric synthetic resin and conducting particles (conductive particle), conducting particles 1 is shown in the profile of Figure 1A, its diameter is approximately 3～5 μ m, its middle body 1a is a polymer, and be coated with metallic conductor 1b outside, as gold, nickel, tin etc.
ACF often is used to the manufacturing of LCD, having plenty of the chip for driving that is used for panel directly is packaged in manufacture method on the glass substrate (industry is commonly referred to as COG, be chip on glass), perhaps this chip for driving is engaged to flexible circuit board (COF, i.e. chip on FPC), rejoins to the method for substrate.In addition, ACF also is applicable to chip join in the manufacture method of general printed circuit board (PCB) (COB, i.e. chip onboard).
Shown in Figure 1B, with above-mentioned glass substrate, flexible circuit board, printed circuit board (PCB) or other circuit board piece of substrate 4 expressions.In the mill, be formed with contact mat (pad) 4a on its substrate 4, use for various signals, energy delivery.On the other hand, on the pin of chip 3, form thicker conductive projection (bump) 3a.Insert aeolotropic conductive (ACF) 5 between chip for driving 3 and the substrate 4, heating changes the viscosity of aeolotropic conductive (ACF) 5 then, then pressing chip for driving 3 and substrate 4, this moment corresponding contact mat 4a with conductive projection 3a between must be mutual the aligning.
Because conductive projection 3a has certain thickness, conducting particles 1 can be extruded between conductive projection 3a and contact mat 4a.By the metal level 1b that its outer peripheral face coats, the conducting particles 1 that is extruded just constitutes between conductive projection 3a and contact mat 4a and is electrically connected.Utilize ACF to carry out Chip Packaging, just can finish the action that bonding chip for driving 3 and circuit couple simultaneously.
When the spacing of electrode more and more hour, conductive projection and interelectrode structure packing technique are also to the structure packing technique development of closely-spaced (fine pitch).Seizure number for the conducting particles that increases conductive projection, need to use the aeolotropic conductive (ACF) of more conducting particles numbers, be used for doing the conducting of vertical direction, but as shown in Figure 2, two adjacent conductive projection 202,204 easy gatherings, and the short circuit that produces 202,204 of conductive projections because of conducting particles 206.
Generally speaking, prior art uses gold as conductive projection 302.Yet, as shown in Figure 3, use gold to be: when semiconductor substrate 304 and glass substrate 306 use aeolotropic conductives 308 joints as another shortcoming of conductive projection 302, in the manufacture method of aeolotropic conductive 308 that is heating and curing, easily because the thermal coefficient of expansion of semiconductor substrate 304 and glass substrate 306 different, after two substrates 304,306 engages cooling, produce sizable shrinkage stress.And the elastic buffer power of the conductive projection 302 of metal material is not good, therefore causes the distortion of two substrates 304,306 yet, forms the uneven phenomenon of anaclasis.
Summary of the invention
In view of this, in order to address the above problem, the object of the present invention is to provide a kind of composite projection structure and manufacture method, the sidewall of its projection cube structure is not have a polymer of conductivity, can solve the prior art conducting particles and assemble, and the problem of short-circuit between the generation conductive projection.And because the elastic restoring force of the polymer of its composite projection structure, be big, between available buffer semiconductor substrate and glass substrate, engage the stress that produces, solve the problem of being out of shape than the golden projection of prior art.
For reaching above-mentioned purpose; the invention provides a kind of composite projection structure; it main part that comprises that a substrate, a contact mat are arranged on the substrate, a polymer is formed is positioned on the contact mat, at least one conductive plunger is positioned at main part; wherein conductive plunger perforation entire body part one conductive layer is positioned on the main part; wherein conductive layer is electrically connected with contact mat via conductive plunger, and a protective layer is positioned on the substrate and the cover part contact mat.
For reaching above-mentioned purpose, the invention provides a kind of manufacture method of composite projection structure, comprise the following steps: to provide a substrate, wherein form a contact mat on the substrate; Form a polymeric layer and reach upward contact mat in substrate; Graphical polymeric layer is to form a polymer projection on contact mat, and wherein this polymer projection comprises that only lacking a groove exposes contact mat to the open air; Form a conductive plunger in each groove; And form a conductive layer on the polymer projection.
Description of drawings
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. is shown and is elaborated.
Figure 1A shows typical conductive particle structure.
The ACF bonding method schematic diagram of Figure 1B display driver chip and glass substrate.
Fig. 2 shows that two adjacent conductive projections produce the schematic diagram of short circuit because of the conducting particles gathering.
Fig. 3 shows that two substrates engages the schematic diagram that the back produces distortion because of thermal coefficient of expansion is different.
Fig. 4 shows the generalized section of composite projection structure optimization embodiment of the present invention.
Fig. 5 shows the floor map of composite projection structure optimization embodiment of the present invention.
Fig. 6 shows that composite projection structure of the present invention avoids causing the schematic diagram of the phenomenon of short circuit.
Fig. 7 shows the uneven schematic diagram of composite projection structure buffering projection coplane degree of the present invention.
Fig. 8 A to 8D shows the manufacture method schematic diagram of the preferred embodiment of composite projection manufacture method of the present invention.
The simple symbol explanation
Prior art
Conductive particle～1; Metal level～1b;
Chip～3; Conductive projection～3a;
Substrate～4; Metal gasket～4a;
ACF～5
Conductive projection～202,204,302; Conducting particles～206;
Semiconductor substrate～304; Glass substrate～306;
Aeolotropic conductive～308;
The technology of the present invention:
Substrate～400; Contact mat～402;
Main part～404; Conductive plunger～406;
Conductive layer～408; Glass substrate～600;
Composite projection～602,604,702,704;
Conducting particles～606,706; Composite projection sidewall～608;
Protective layer～403; Polymeric layer～405;
Groove～407.
Embodiment
[embodiment]
As shown in Figure 4, the composite projection structure of present embodiment comprises following elements: a contact mat 402 is positioned on the substrate 400, and this substrate 400 for example is the semiconductor substrate, is formed with the electrode (not shown) on the substrate 400, and contact mat 402 is electrically connected with electrode.The main part 404 that one polymer is formed is positioned on the substrate 400, and above-mentioned polymer is preferably a high molecular polymer, is more preferred from thermal coefficient of expansion and for example aluminium, and metals such as gold are close, and the high molecular polymer good with metal bond.
The composite projection structure of present embodiment comprises that also at least one conductive plunger 406 is arranged in main part 404.In detail, above-mentioned conductive plunger 406 connects entire body part 404; Reach a conductive layer 408 and be positioned on the main part 404, wherein conductive layer 408 is electrically connected with contact mat 402 via conductive plunger 406.In the preferred embodiment of the present invention, conductive plunger 406, conductive layer 408 and contact mat 402 are low resistance conducting metal (for example: aluminium, gold, tungsten, titanium, copper, nickel, nickel alloy, ITO or its combination), and conductive plunger 406 can be one, or a plurality of, with connecting conductive layer 408 and contact mat 402.For example, have 4 conductive plungers projection cube structure plane graph as shown in Figure 5, conductive plunger 406 is formed in the main part 404.In addition, as shown in Figure 4, composite projection of the present invention comprises that also a protective layer 403 is positioned on the substrate 400, and cover part contact mat 402.Above-mentioned protective layer 403 is constituted by a megohmite insulant, and therefore composite projection of the present invention only is electrically connected via conductive plunger 406 and contact mat 402 by conductive layer 408, and remainder is all isolated with main part 404 and protective layer 403 that megohmite insulant is formed.So, composite projection provided by the invention has the feature that is difficult for short circuit.
As shown in Figure 6, use composite projection 602 of the present invention in first substrate 400 and manufacture method that conductive pad 601 on second substrate 600 engages, its first substrate 400 can be the semiconductor substrate, and second substrate 600 can be a glass substrate, or flexible circuit board.Even 602,604 of the composite projections of two vicinities, conducting particles 606 is assembled the sidewall 608 that connects two composite projections, because the sidewall of the composite projection of present embodiment 608 is a polymer, has the effect of insulation, can avoid causing the phenomenon of short circuit.Also therefore, can select ACF with more conducting particles 606 seizure number for use with the conducting particles 606 that increases each projection 602.Simultaneously, also because the probability of 602,604 short circuits of two adjacent projections reduces, can the short manufacture method of (fine pitch) at interval of easier use.
As shown in Figure 7, in semiconductor substrate 400 and manufacture method that glass substrate 600 engages, because the main part of the composite projection of present embodiment 404 is a polymer, have than the golden projection of prior art elastic restoring force more, available buffer semiconductor substrate 400 engages the thermal stress that is produced with glass substrate 600, simultaneously also because its preferred elastic restoring force can reduce the inhomogeneous problem that produces of projection coplane degree.Please refer to Fig. 7, if the general projection 704 of the height of a projection 702 is high, in semiconductor substrate 400 and manufacture method that glass substrate 600 engages, because the projection 702 of present embodiment has preferred elastic restoring force, the available buffer contact stress, avoid because of contact stress causes breaking of conducting particles 706 too greatly, or conducting particles 706 is absorbed in the projection 702, the problem of the loose contact that causes.
[generation type]
See also Fig. 8 A to 8D, it shows the manufacture method schematic diagram of the preferred embodiment of composite projection manufacture method of the present invention.
At first, shown in Fig. 8 A, provide a substrate 400, wherein be formed with a contact mat 402 on the substrate 400.Form a protective layer 403 and be positioned on the substrate 400, covered substrate 400 and part contact mat 402.Its substrate 400 is preferably the semiconductor substrate, and its contact mat 402 is preferably and has low-resistance metal and form, for example aluminium, copper or gold.Afterwards, shown in Fig. 8 B, form a polymeric layer 405 on contact mat 402 and protective layer 403, its polymeric layer 405 is preferably a high molecular polymer, is more preferred from thermal coefficient of expansion and for example aluminium, the material that metals such as gold are close.
Come, shown in Fig. 8 C, graphical polymeric layer 405 is to form a polymer projection 404 on contact mat 402 again, and wherein each projection 404 only is formed with less a groove 407 and exposes contact mat 402 to the open air.Then, shown in Fig. 8 D, deposition and etch-back one conductive sacrificial layer are to form a conductive plunger 406 in polymeric layer 405, and conductive plunger 406 is for example formed by having low-resistance metal, for example aluminium or gold.At last, form a conductive layer 408 on projection 404, wherein conductive layer 408 and contact mat 402 are electrically connected to each other via conductive plunger 406.
[the features and advantages of the present invention]
The invention is characterized in that it is not have a polymer of conductivity that a kind of composite projection structure and manufacture method, the sidewall of its projection cube structure are provided, can solve the prior art conducting particles and assemble, and produce problem of short-circuit between conductive projection.Also therefore, can select ACF with more conducting particles seizure number for use with the conducting particles that increases each projection.Simultaneously, also because the probability of short circuit reduces between two adjacent projections, can the short manufacture method of (fine pitch) at interval of easier use.
And because the elastic restoring force of the polymer of its composite projection structure, be big, between available buffer semiconductor substrate and glass substrate, engage the stress that produces, solve the problem of being out of shape than the golden projection of prior art.Simultaneously also because its preferred elastic restoring force can reduce the inhomogeneous contact stress that produces of projection coplane degree and cause breaking of conducting particles too greatly, or conducting particles is absorbed in the projection problems such as the loose contact that causes.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (10)
1. composite projection structure comprises:
One substrate;
One contact mat is positioned on this substrate;
The main part that one polymer is formed is positioned on this contact mat;
At least one conductive plunger is arranged in this main part, and wherein this conductive plunger connects the entire body part, and is electrically connected with this contact mat;
One conductive layer is positioned on this main part, and wherein this conductive layer is electrically connected with this contact mat via this conductive plunger; And
One protective layer is positioned on this substrate and this contact mat of cover part.
2. composite projection structure as claimed in claim 1, wherein this conductive plunger is selected from following group: aluminium, gold, tungsten, titanium, copper, nickel, nickel alloy, ITO and its combination.
3. the manufacture method of a composite projection structure comprises the following steps;
One substrate is provided, wherein is formed with a contact mat on this substrate;
On this substrate, form a polymeric layer;
Graphical this polymeric layer is to form a polymer projection that is positioned on this contact mat, and wherein each polymer projection comprises at least one groove that exposes this contact mat to the open air;
In each groove, form a conductive plunger; And
On this polymer projection, form a conductive layer.
4. the manufacture method of composite projection structure as claimed in claim 3 also comprises forming a protective layer, this contact mat of cover part.
5. composite projection structure comprises:
One first substrate;
One contact mat is positioned on this first substrate;
The main part that one polymer is formed is positioned on this contact mat;
At least one conductive plunger is arranged in this main part, and wherein this conductive plunger connects the entire body part;
One conductive layer is positioned on this main part, and wherein this conductive layer is electrically connected with this contact mat via this conductive plunger;
One protective layer is positioned on this first substrate and this contact mat of cover part;
One second substrate, with respect to this first substrate, wherein this second substrate is formed with a conductive pad on the face with respect to this first substrate; And
One conducting resinl that includes a plurality of conducting particless wherein accompanies at least one conducting particles between this conductive layer and this conductive pad in order to bonding this first substrate and this second substrate.
6. composite projection structure as claimed in claim 5, wherein this first substrate is the semiconductor substrate.
7. composite projection structure as claimed in claim 5, wherein this second substrate is a glass substrate or a flexible circuit board.
8. composite projection structure as claimed in claim 5, wherein this conductive plunger and this conductive layer are formed by low-resistance metal.
9. composite projection structure as claimed in claim 8, wherein this metal is selected from following group: aluminium, gold, tungsten, titanium, copper, nickel, nickel alloy, ITO and its combination.
10. composite projection structure as claimed in claim 8, wherein this The thermal expansion of polymer coefficient is close with this metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100452429A CN100342531C (en) | 2004-06-04 | 2004-06-04 | Composite scab structure and producing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100452429A CN100342531C (en) | 2004-06-04 | 2004-06-04 | Composite scab structure and producing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1585122A true CN1585122A (en) | 2005-02-23 |
| CN100342531C CN100342531C (en) | 2007-10-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100452429A Expired - Fee Related CN100342531C (en) | 2004-06-04 | 2004-06-04 | Composite scab structure and producing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102790016A (en) * | 2011-05-16 | 2012-11-21 | 颀邦科技股份有限公司 | Bump structure and producing process thereof |
| CN102790035A (en) * | 2011-05-17 | 2012-11-21 | 颀邦科技股份有限公司 | Bump structure and process |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5909056A (en) * | 1997-06-03 | 1999-06-01 | Lsi Logic Corporation | High performance heat spreader for flip chip packages |
| US6218629B1 (en) * | 1999-01-20 | 2001-04-17 | International Business Machines Corporation | Module with metal-ion matrix induced dendrites for interconnection |
| KR100306842B1 (en) * | 1999-09-30 | 2001-11-02 | 윤종용 | Redistributed Wafer Level Chip Size Package Having Concave Pattern In Bump Pad And Method For Manufacturing The Same |
| US6458623B1 (en) * | 2001-01-17 | 2002-10-01 | International Business Machines Corporation | Conductive adhesive interconnection with insulating polymer carrier |
| DE10114897A1 (en) * | 2001-03-26 | 2002-10-24 | Infineon Technologies Ag | Electronic component |
| US6930032B2 (en) * | 2002-05-14 | 2005-08-16 | Freescale Semiconductor, Inc. | Under bump metallurgy structural design for high reliability bumped packages |
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2004
- 2004-06-04 CN CNB2004100452429A patent/CN100342531C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102790016A (en) * | 2011-05-16 | 2012-11-21 | 颀邦科技股份有限公司 | Bump structure and producing process thereof |
| CN102790016B (en) * | 2011-05-16 | 2014-10-15 | 颀邦科技股份有限公司 | Bump structure and producing process thereof |
| CN102790035A (en) * | 2011-05-17 | 2012-11-21 | 颀邦科技股份有限公司 | Bump structure and process |
| CN102790035B (en) * | 2011-05-17 | 2015-02-18 | 颀邦科技股份有限公司 | Bump structure and process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100342531C (en) | 2007-10-10 |
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Granted publication date: 20071010 Termination date: 20200604 |