CN1581529A - Microworking method of miniature electric heating element having micron-level thermoelectric arm - Google Patents
Microworking method of miniature electric heating element having micron-level thermoelectric arm Download PDFInfo
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- CN1581529A CN1581529A CN 200410038297 CN200410038297A CN1581529A CN 1581529 A CN1581529 A CN 1581529A CN 200410038297 CN200410038297 CN 200410038297 CN 200410038297 A CN200410038297 A CN 200410038297A CN 1581529 A CN1581529 A CN 1581529A
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Abstract
Combining depth ionic reaction etching technique for silicon wafer with powder padding technique for minitype mould and minitype die casting technique of air pressure fusion, disclosed method prepares array structure of thermoelectrical arm of P type and N type material in stagger arrangement on same silicon chip at one time. After silicon film being removed by using dry process gas corrosion technique of semiconductor, thermoelectric elements are assembled together with upper and lower base plates arranged. Packing density can reach 10000 pair of P-N junction/cm2. The invention is applicable to mini type thermoelectricity batteries and thermoelectricity freezer based on thermoelectric effect.
Description
Technical field
The invention belongs to thermoelectric components and parts processing technique field, particularly comprise a kind of micro-processing method of generating of thermoelectric material micro-processing technology and minisize thermoelectric or cooling components and parts micro-processing technology with minisize thermoelectric element of micron order thermoelectric arm.
Background technology
Thermoelectric material is directly to carry out the functional material that heat energy and electric energy are changed mutually.The thermoelectric device that utilizes the thermoelectric material body plan is referred to as thermoelectric cell existing under the condition of temperature gradient by the exportable electric energy of Seebeck (Seebeck) effect; On the other hand, if, can freeze, be referred to as thermoelectric cooling device by Peltier (Peltier) effect with the thermoelectric device energising.Thermoelectric cell and thermoelectric cooling device (below be referred to as thermoelectric device) simple in structure, do not have mechanical moving elements such as rotating or moves, be well suited for and be prepared into micro power or local refrigeration device.The minisize thermoelectric device in various high, precision and frontier technology constantly to today of miniaturization and microminiaturized development, particularly in MEMS (micro electro mechanical system) (as micro detector, microcontroller, microsensor) as the optimal power supply assembly extensive application of micro-system, have the important application prospect in microelectric technique and biological technical field as microcell refrigeration or temperature control device.
Thermoelectric device is by the interlaced arrangement of the pillar of P type and N type thermoelectric material (or claiming thermoelectric arm), and is linked together with series system.By the microminiaturized radical that can improve the P-N knot on the unit are simultaneously of thermoelectric device, thereby reach the purpose that improves thermoelectric conversion or cooling effectiveness.The key technology that realizes the microminiaturization of thermoelectric device is how to prepare fine P-N knot.At present, the processing main material machine cuts process technology of thermoelectric device.But because low, the poor toughness of thermoelectric material common intensity, the machine cuts process technology is difficult to be applicable to the processing of minisize thermoelectric device.
Summary of the invention
The object of the present invention is to provide a kind of micro-processing method with minisize thermoelectric element of micron order thermoelectric arm.It is characterized in that: described micro-processing method with minisize thermoelectric element of micron order thermoelectric arm be deep ion reactive ion etching technology, minisize mould powder filling technique and the miniature die-casting technique of air pressure fusion in conjunction with silicon wafer on a slice silicon chip once property prepare P-type and the staggered thermoelectric arm array structure of N-section bar material, and configuration upper and lower base plate, after utilizing semi-conductive dry method gas attack technology to remove silicon fiml, be assembled into thermoelectric element.
Its technological process is:
1. utilize deep reactive ion etching to process staggered microwell array, as the minisize mould use of preparation minisize thermoelectric element on the two sides of silicon chip;
2. the attritive powder of the Bi-Te-Sb alloy of the P-type Bi-Te-Sb alloy of thermoelectric material and N-type is filled in the upper and lower surface of minisize mould respectively, and its vacuum is enclosed in borate glass jacket;
3. vacuum-packed sample is heated to 550-750 ℃ in heat isostatic apparatus or gas pressure sintering stove under argon shield, makes to be sealed in the micropore inside that inner thermoelectric powder is pressed into mould, densified sintering product or fusion;
4. after the cooling, remove glass and stay the thermoelectric material of silicon chip surface, obtain containing the silicon chip template of thermoelectric arm array, utilize the precise finiss technology that precise finiss is carried out on the two sides of the silicon chip template that contains the thermoelectric arm array, the thermoelectric microtrabeculae that the back side is filled exposes head and comes;
5. utilize photoetching and electroplating technology, form the P-N knot on the two sides, and the configuration upper and lower base plate, utilize semi-conductive dry method gas attack technology to remove silicon fiml after, be assembled into thermoelectric element.
The invention has the beneficial effects as follows that compared with prior art the present invention uses the semiconductor microactuator process technology, can realize the ultra tiny processing of micron order of thermoelectric material; Adopt the match plate technology, can once on same template, process the array structure of large-area two kinds of orderly staggered minisize thermoelectric arms of material.The diameter of thermoelectric arm can reach below 40 microns, and aspect ratio is greater than 7, and arranging density can reach 10000 couples of P-N knot/cm
2Technology of the present invention is suitable for preparing miniature thermoelectric battery and the temperature-difference refrigerating device based on thermoelectric effect.
Description of drawings
Fig. 1 (a, b, c, d, e, f) is for to utilize silicon mould technology to prepare the micro fabrication flow process of minisize thermoelectric element.
Fig. 2 is the silicon mould surface scan electromicroscopic photograph behind the filling thermoelectric material.
Fig. 3 is the silicon mould longitudinal section stereoscan photograph behind the filling thermoelectric material.
Embodiment
The invention provides a kind of micro-processing method with minisize thermoelectric element of micron order thermoelectric arm.Micro-processing method with minisize thermoelectric element of micron order thermoelectric arm be deep ion reactive ion etching technology, minisize mould powder filling technique and the miniature die-casting technique of air pressure fusion in conjunction with silicon wafer on a slice silicon chip once property prepare P-type and the staggered thermoelectric arm array structure of N-section bar material, and configuration upper and lower base plate, after utilizing semi-conductive dry method gas attack technology to remove silicon fiml, be assembled into thermoelectric element.Its technological process is:
1. utilize deep reactive ion etching to process staggered microwell array, as the minisize mould use of preparation minisize thermoelectric element on the two sides of silicon chip;
2. the attritive powder of the Bi-Te-Sb alloy of the P-type Bi-Te-Sb alloy of thermoelectric material and N-type is filled in the upper and lower surface of minisize mould respectively, and its vacuum is enclosed in borate glass jacket;
3. vacuum-packed sample is heated to 550-750 ℃ in heat isostatic apparatus or gas pressure sintering stove under argon shield, makes to be sealed in the micropore inside that inner thermoelectric powder is pressed into mould, densified sintering product or fusion;
4. after the cooling, remove glass and stay the thermoelectric material of silicon chip surface, obtain containing the silicon chip template of thermoelectric arm array, utilize the precise finiss technology that precise finiss is carried out on the two sides of the silicon chip template that contains the thermoelectric arm array, the thermoelectric microtrabeculae that the back side is filled exposes head and comes;
5. utilize photoetching and electroplating technology, form the P-N knot on the two sides, and the configuration upper and lower base plate, utilize semi-conductive dry method gas attack technology to remove silicon fiml after, be assembled into thermoelectric element.
Concrete preparation technology is as follows:
1. the preparation of double side microporous array silicon template is to utilize deep reactive ion etching to process staggered microwell array (a in as Fig. 1 on the two sides of silicon chip, shown in the b): used thickness is 400 μ m, the length of side is the silicon chip 2 of 20mm, after adopting normal process cleaning and drying, earlier be coated with the thick photoresist 1 (model AZ P4400) of the about 5 μ m of last layer at a side surface of this silicon chip 2, and dry with post bake and handle with colluding the glue machine.At the quartz glass mask plate that photoresist 1 surface coverage prepares in advance, use exposure machine (model KARL SUSSMJB3-UV40) that photoresist 1 is exposed, again preparation photoresist mask after development treatment.Use reactive ion etching (RIE) equipment (STS Multiplex ICP ASE) that etching is carried out on the surface with the photoresist mask.The corrosion and the protective gas that use are respectively SF
6And C
4F
8, etching speed is 1 μ m/min, etch period is 5 hours, etches dress P-type thermoelectric material micropore 3 in the front, then to the back side of same silicon chip 2, carries out same mask preparation and reactive ion etching, etches dress N-type thermoelectric material micropore 4.When carrying out the exposure at the back side, make the micropore center on the two sides certain distance that relatively moves by precision positioning, make the insertion (shown in b among Fig. 1) of staggering mutually of the micropore 3 and 4 on two sides, the length of side of micropore is 40 μ m, the degree of depth is 300 μ m, and the center distance of neighbouring micropore is 60 μ m.In the length of side is that the middle body (square of length of side 10mm) of the square silicon chip of 20mm has processed the template that 10000 micropores are respectively arranged up and down.
2. little processing of minisize thermoelectric element: (chemical composition is: (Bi with P-type Bi-Te-Sb alloy
0.25Sb
0.75)
2(Te
0.93Se
0.07)
3) and the Bi-Te-Sb alloy of N-type (chemical composition is: (Bi
2Te
3)
0.975(Bi
2Se
3)
0.025+ 0.05wt%SbI) ingot bar is broken into powder.In powder, add absolute ethyl alcohol, make it to be mixed into mud, P-type and N-type powder mud are filled out array micropore 3 and micropore 4 on silicon chip 2 two sides respectively, put it into then in the borate glass jacket 7 of one section sealing, vacuumize the back and the silicon chip 2 of having filled the Bi-Te-Sb alloy is sealed in the glass bag 7 (shown in c among Fig. 1) with flame gun.The sample that will so obtain is placed on heating (shown in d among Fig. 1) in anti-10 atmospheric gas pressure sintering stoves in the boron nitride crucible again.Earlier the speed with 10 ℃/min rises to 630 ℃ with temperature, in the stove filling in advance 1 atmospheric argon gas, along with temperature rising air pressure in the stove has corresponding increase.When temperature reaches 630 ℃, reduce programming rate, make temperature in 30 minutes, rise to 700 ℃, and regulate the argon gas air inflow, make internal gas pressure slowly be increased to 10 atmospheric pressure.After keeping 30 minutes under this condition, with the speed cooling of 10 ℃/min, pressure also descends thereupon.Because the fusing point of P-type and N-type Bi-Te-Sb alloy is respectively 606 ℃ and 588 ℃, all is lower than 700 ℃ of maximum heating temperatures, so the powder that is filled in above the silicon mould is all dissolved in heating process.On the other hand, the borate glass that uses is beginning to soften more than 630 ℃, can be effectively transmit gas pressure, make the Bi-Te-Sb alloy pressurized that is in molten condition and infiltration into microporous inside (shown in c among Fig. 1), obtain containing the silicon chip template of thermoelectric arm array by glass.Then the cooled silicon chip template that contains the thermoelectric arm array is removed glass and stay the thermoelectric material of silicon chip surface, utilize the precise finiss technology that precise finiss is carried out on the two sides of the silicon chip template that contains the thermoelectric arm array, the thermoelectric microtrabeculae that the back side is filled exposes head and comes; Utilize photoetching and electroplating technology at last, form the P-N knot on the two sides, and configuration upper and lower base plate 8, series connection thermoelectric arm (shown in e among Fig. 1), utilize semi-conductive dry method gas attack technology to remove silicon fiml after, be assembled into thermoelectric element (shown in f among Fig. 1).
Shown in Figure 2 is the stereoscan photograph of the specimen surface that obtains through above-mentioned processing, and the high square of brightness is the section that is filled in the P-type Bi-Te-Sb alloy microtrabeculae in the silicon mould micropore.Shown in Figure 3 is corresponding to the stereoscan photograph after the grinding of the longitudinal section of Fig. 2, shows that we have obtained two kinds of staggered micro-pillar array of material.
Claims (1)
1. micro-processing method with minisize thermoelectric element of micron order thermoelectric arm, it is characterized in that: described micro-processing method with minisize thermoelectric element of micron order thermoelectric arm is deep ion reactive ion etching technology, minisize mould powder filling technique and the miniature die-casting technique of air pressure fusion in conjunction with silicon wafer, once property is prepared P-type and the staggered thermoelectric arm array structure of N-section bar material on a slice silicon chip, and configuration upper and lower base plate, after utilizing semi-conductive dry method gas attack technology to remove silicon fiml, be assembled into thermoelectric element; Its technological process is:
1. utilize deep reactive ion etching to process staggered microwell array, as the minisize mould use of preparation minisize thermoelectric element on the two sides of silicon chip;
2. the attritive powder of the Bi-Te-Sb alloy of the P-type Bi-Te-Sb alloy of thermoelectric material and N-type is filled in the upper and lower surface of minisize mould respectively, and its vacuum is enclosed in borate glass jacket;
3. vacuum-packed sample is heated to 550-750 ℃ in heat isostatic apparatus or gas pressure sintering stove under argon shield, makes to be sealed in the micropore inside that inner thermoelectric powder is pressed into mould, densified sintering product or fusion;
4. after the cooling, remove glass and stay the thermoelectric material of silicon chip surface, obtain containing the silicon chip template of thermoelectric arm array, utilize the precise finiss technology that precise finiss is carried out on the two sides of the silicon chip template that contains the thermoelectric arm array, the thermoelectric microtrabeculae that the back side is filled exposes head and comes;
5. utilize photoetching and electroplating technology, form the P-N knot on the two sides, and the configuration upper and lower base plate, utilize semi-conductive dry method gas attack technology to remove silicon fiml after, be assembled into thermoelectric element.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840990A (en) * | 2010-04-30 | 2010-09-22 | 华南师范大学 | Hole preparation method of N-type pure Si-doped thermoelectric material |
| US8609454B2 (en) | 2012-05-10 | 2013-12-17 | Industrial Technology Research Institute | Self-assembly apparatus, device self-assembling method, and method of assembling thermoelectric devices |
| CN101611100B (en) * | 2006-10-28 | 2014-08-06 | P2I有限公司 | Novel products |
| CN109853033A (en) * | 2018-12-07 | 2019-06-07 | 合肥市华达半导体有限公司 | A kind of manufacturing method of semiconductor device |
| CN111250715A (en) * | 2020-03-06 | 2020-06-09 | 北京航空航天大学 | Three-dimensional MEMS structure metal filling method based on powder sintering process |
| CN113629179A (en) * | 2021-08-10 | 2021-11-09 | 东莞先导先进科技有限公司 | Semiconductor thermoelectric device and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3459328B2 (en) * | 1996-07-26 | 2003-10-20 | 日本政策投資銀行 | Thermoelectric semiconductor and method for manufacturing the same |
| JPH11186618A (en) * | 1997-12-19 | 1999-07-09 | Aisin Seiki Co Ltd | Plating pre-treatment method of thermoelectric semiconductor |
| JP2002374010A (en) * | 2001-06-15 | 2002-12-26 | Yyl:Kk | Electrode structure, semiconductor device, and thermoelectric apparatus and manufacturing method thereof |
-
2004
- 2004-05-21 CN CNB2004100382977A patent/CN100413109C/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101611100B (en) * | 2006-10-28 | 2014-08-06 | P2I有限公司 | Novel products |
| CN101840990A (en) * | 2010-04-30 | 2010-09-22 | 华南师范大学 | Hole preparation method of N-type pure Si-doped thermoelectric material |
| CN101840990B (en) * | 2010-04-30 | 2012-07-11 | 华南师范大学 | Hole preparation method of N-type pure Si-doped thermoelectric material |
| US8609454B2 (en) | 2012-05-10 | 2013-12-17 | Industrial Technology Research Institute | Self-assembly apparatus, device self-assembling method, and method of assembling thermoelectric devices |
| CN109853033A (en) * | 2018-12-07 | 2019-06-07 | 合肥市华达半导体有限公司 | A kind of manufacturing method of semiconductor device |
| CN111250715A (en) * | 2020-03-06 | 2020-06-09 | 北京航空航天大学 | Three-dimensional MEMS structure metal filling method based on powder sintering process |
| CN111250715B (en) * | 2020-03-06 | 2021-01-26 | 北京航空航天大学 | Three-dimensional MEMS structure metal filling method based on powder sintering process |
| CN113629179A (en) * | 2021-08-10 | 2021-11-09 | 东莞先导先进科技有限公司 | Semiconductor thermoelectric device and preparation method thereof |
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