CN106986315B - A kind of p-type bismuth telluride thermoelectric material and preparation method suitable for low-temperature electricity-generating - Google Patents
A kind of p-type bismuth telluride thermoelectric material and preparation method suitable for low-temperature electricity-generating Download PDFInfo
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- CN106986315B CN106986315B CN201610040958.2A CN201610040958A CN106986315B CN 106986315 B CN106986315 B CN 106986315B CN 201610040958 A CN201610040958 A CN 201610040958A CN 106986315 B CN106986315 B CN 106986315B
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
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- C01P2006/40—Electric properties
Abstract
The present invention relates to a kind of p-type bismuth telluride thermoelectric material and preparation method suitable for low-temperature electricity-generating, the constitutional chemistry formula of the thermoelectric material is Bi0.5Sb1.5‑xMxTe3, wherein 0 x≤0.04 <,zTValue can reach 1.2 or more near 450 K, wherein the M is Cu, Cd or Mg.Preparation process of the present invention is simple, has repeatability well, can satisfy the requirement of industrial mass manufacture.
Description
Technical field
The invention belongs to thermoelectric material fields, and the p-type bismuth telluride material and preparation method, the material after being related to optimization exist
Nearby warm area has excellent thermoelectricity capability to 450K, very well satisfies the requirement of bismuth telluride power generating device.
Background technique
Thermoelectric generation technology can use the mutual conversion that thermoelectric material realizes thermal energy and electric energy.Using Seebeck effect,
Low-quality industrial waste heat can be converted to the electric energy of high-quality, and have the advantages that green non-pollution, high reliablity.Thermoelectricity
The temperature at high/low temperature end and material itself have relationship when the transfer efficiency and work of material, wherein the thermoelectricity capability heat of material
Electric figure of merit zT is evaluated, and is defined as zT=S2σ T/ κ, wherein S is Seebeck coefficient, and σ is conductivity, and T is absolute temperature, and κ is indicated
Thermal conductivity.The zT value of material is higher, and thermoelectricity capability is also higher.
Bismuth telluride is a kind of common thermoelectric material, and commercialization degree is higher, and currently used p-type bismuth telluride material is
Bi2Te3With Sb2Te3Solid solution compound, mainly prepared by preparation methods such as zone-melting process, descent method, powder metallurgy.Its
It is middle to be prepared using zone-melting process and descent method with the bismuth telluride monocrystal material for taking tropism by force, and have most along the direction of growth
Good thermoelectricity capability, but due to easy cleavage, will cause the waste of material in process.In addition, powder metallurgy is also a kind of
Important preparation method, this method is simple and easy, and can greatly improve mechanics of materials intensity, has better processing performance,
But during the sintering process, material can generate certain orientation under the inducing action of pressure, therefore need to be according to sintering pressure side
Always the thermoelectricity for evaluating material transports performance.
Bi0.5Sb1.5Te3Be more common composition at present, there is excellent thermoelectricity capability at room temperature, thus usually by with
The thermoelectric cooling device for making near room temperature, the technology to match therewith are also more complete.But Thermoelectric Generator temperature end
Operating temperature is in 500K or so, traditional bismuth telluride material Bi0.5Sb1.5Te3Intrinsic excitation occurs near this temperature leads to material
Material performance sharply deteriorates, and is unable to satisfy the requirement of bismuth telluride power generating device.
Patent document 1 provides a kind of polynary thermoelectric alloy material, which set by the composition of Bi-Te sill
Meter, plasma discharging spark sintering SPS, to achieve the purpose that improve thermoelectricity capability.It is mainly 0.05 by molar fraction
Cu element substitution equal mole score Sb element, constitute quaternary Cu-Bi-Sb-Te alloy material, its specific proportioning components
For Cu0.05Bi0.5Sb1.45Te3.Material advantages: refrigeration or middle low-temperature electricity-generating field be can be applied to；Manufactured device has operation can
It leans on, the service life is long, higher thermoelectricity capability.In 442K, factor alpha=173.2 Seebeck (μ V/K) of material, conductivityσ=
8.0×104Ω-1.m-1, thermal conductivity κ=0.88 (W.K-1.m-1), dimensionless thermoelectric figure of merit ZT=1.2.Material has the feature of environmental protection
Matter, it is pollution-free, it is noiseless, it is a kind of green energy resource material.Material is using conventional powder metallurgic method preparation, simple process.But
It is not consider the due orientation of bismuth telluride material in the patent, influences the accuracy of data acquisition, may cause performance
Over-evaluate；The annealing process having ignored causes material crystalline incomplete, and electrical property is deteriorated；Introducing excessive Cu will lead to part
Precipitation forms impurity phase, is unfavorable for the promotion of material property.Importantly, can not be by adjusting Cu volume come real in the patent
Now to the continuous controllable of material property, flexibility is lacked in production application.
Patent document 2CN1804078A Bi-Te base thermoelectricity material and preparation process are related to the Bi-Te of field of new materials
Base thermoelectricity material and preparation process.The Sb element for the Ag element substitution equal mole score for being mainly 0.2 by molar fraction,
Quaternary Bi-Sb-Ag-Te alloy material is constituted, group becomes Bi0.5Sb1-xAgxTe3Wherein, x=0.1~0.4.Preparation process
It is that material is synthesized by vacuum melting, synthesis temperature is 950~1050 DEG C, powder of the generated time within 10 hours, after ball milling
End is shaped through plasma discharging spark sintering (SPS), and sintering temperature is 300~400 DEG C, 30~50MPa of sintering pressure.Material is excellent
Point: be applied to refrigeration or middle low-temperature electricity-generating component, have it is reliable for operation, the service life is long, higher thermoelectricity capability.In 554K,
Factor alpha=143.8 Seebeck (μ V/K) of material, conductivityσ=6.8 × 104 Ω -1m-1, thermal conductivity κ=0.57
(WK-1m-1), the p-type Bi-Te base thermoelectricity material of dimensionless thermoelectric figure of merit ZT=1.37, it is pollution-free, it is noiseless,
It is a kind of green energy resource material.But as noble metal production cost will be significantly increased, it is difficult to application in Ag in the patent.
A kind of SPS method is provided in non-patent literature 1 prepares quaternary alloy ZnxBi0.5Sb1.5-xTe3(x=0.05-0.4)
And its microstructure and electric property.Quaternary Zn is prepared using plasma discharging spark sintering method (SPS)xBi0.5Sb1.5-xTe3(x
=0.05-0.4) (molar fraction, similarly hereinafter) alloy, when the amount of Zn is 0.05, there is maximum value in the conductivity of material, and room temperature is attached
Its nearly value is 2.5 × 10^4 Ω ^-1m^-1, about the 1.35 of ternary Bi0.5Sb1.5Te3 alloy times.Under synthermal,
Power factor P value also obtains maximum value (1.65 × 10^-3Wm^-1K^-2), but still well below having been commercialized at present
Bismuth telluride material (30~40 × 10-3Wm-1K-2), it is difficult to replace the prior art.
And although the research work of current bismuth telluride makes material property obtain certain promotion, but deposit in practical applications
In poor controllability or disadvantage at high cost.Therefore, there is an urgent need to economy, controllability and the superior bismuth tellurides of stability in this field
Material meets the requirement of power generating device.
Bibliography
A kind of middle polynary electrothermal alloy of low temperature p-type with high thermoelectric figure of merit ZT of patent document 1CN1279201C；
Patent document 2CN1804078A Bi-Te base thermoelectricity material and preparation process are related to the Bi-Te of field of new materials
Base thermoelectricity material and preparation process；
Non-patent literature 1 Cui Jiaolin, Xu Xuebo, Yang Wei .SPS method prepares quaternary alloy ZnxBi0.5Sb1.5-xTe3(x=
Microstructure and electric property [J] Rare Metals Materials and engineering 0.05-0.4), 2006,35 (9): 1475-1478..
Summary of the invention
In view of the above-mentioned problems, small it is an object of that present invention to provide a kind of doping ratio while guaranteeing thermoelectric figure of merit and can advise greatly
The preparation method of the p-type bismuth telluride thermoelectric material suitable for low-temperature electricity-generating of mould production.
In order to reach this purpose, the present invention provides a kind of p-type bismuth telluride thermoelectric material suitable for low-temperature electricity-generating,
It is characterized in that, the constitutional chemistry formula of the thermoelectric material is Bi0.5Sb1.5-xMxTe3, wherein 0 < x≤0.04, zT value exists
450K nearby can reach 1.2 or more.
Preferably, the M is Cu, Cd or Mg.Due to the introducing of Cu, Cd, Mg element in the composition, material is effectively increased
Carrier concentration, it is suppressed that intrinsic excitation, so that thermoelectricity capability of the material near 500K be made to be increased dramatically.
The present invention also provides a kind of preparation methods of p-type bismuth telluride thermoelectric material suitable for low-temperature electricity-generating, comprising:
(1) pure element simple substance is weighed according to stoichiometric ratio and Vacuum Package is carried out to it, obtain sample；
(2) it will be quenched behind at 700~1150 DEG C of gained sample melt process 10~14 hours, then at 350~450 DEG C
Lower annealing 3~7 days；
(3) it is packed into graphite jig after gained ingot casting being pulverized, pressure sintering obtains described suitable for low-temperature electricity-generating
P-type bismuth telluride thermoelectric material.
Preferably, the Vacuum Package is enclosed raw material in quartz ampoule using plasma or flame gun packaged type, wherein
The material of Mg element doping is packaged again after need to containing in advance boron nitride or graphite crucible, so as not to Mg element at high temperature with stone
English pipe is directly contacted and is reacted.
It is carried out preferably, the Vacuum Package is lower under inert gas protection.
Preferably, the pressure sintering is using discharge plasma sintering technique, sintering temperature is 380~430 DEG C, sintering
Pressure is 50~65Mpa, and sintering time is 8~12 minutes.
Preparation process of the present invention is simple, has repeatability well, can satisfy the requirement of industrial mass manufacture.
Detailed description of the invention
Fig. 1 is material preparation flow schematic diagram；
Fig. 2 is Bi0.5Sb1.5Te3And Cu doped samples Bi0.5Sb1.495Cu0.005Te3, Bi0.5Sb1.45Cu0.05Te3Thermoelectricity
Performance: (a) thermal conductivity, (b) conductivity, (c) Seebeck coefficient, (d) thermoelectric figure of merit zT；
Fig. 3 is Bi0.5Sb1.5Te3And Cd doped samples Bi0.5Sb1.49Cd0.01Te3Thermoelectricity capability: (a) thermal conductivity, (b)
Conductivity, (c) Seebeck coefficient, (d) thermoelectric figure of merit zT；
Fig. 4 is Bi0.5Sb1.5Te3And Mg doped samples Bi0.5Sb1.49Mg0.01Te3Thermoelectricity capability: (a) thermal conductivity, (b)
Conductivity, (c) Seebeck coefficient, (d) thermoelectric figure of merit zT.
Specific embodiment
The present invention has excellent heat by the p-type bismuth telluride material after Cu, Cd and Mg doping optimization near 450K
Electrical property can meet the requirement of power generating device, which is characterized in that material specifically comprises Bi0.5Sb1.5-xMxTe3, wherein
0 x≤0.04 <, the M are Cu, Cd or Mg.It is can be achieved in x value range of the present invention to the continuous controllable of material property, and
It is optimum doping concentration as 0.005≤x≤0.01, more than the deterioration that the volume will lead to material property.
The preparation of p-type bismuth telluride material of the present invention passes through Vacuum Package, melting, quenching, annealing and the technique of pressure sintering
It realizes.Attached drawing 1 is preparation technology flow chart.About encapsulation, pure element simple substance is weighed according to stoichiometric ratio and it is carried out very
Sky encapsulation.Melt process selection melt process 10~14 hours at 700~1150 DEG C.3 are made annealing treatment at 350~450 DEG C
~7 days, the pressure sintering at 380~430 DEG C after pulverizing.The Vacuum Package carries out under inert protective gas.It is described
Vacuum Package is enclosed raw material in quartz ampoule using plasma or flame gun packaged type, and wherein the material of Mg element doping needs pre-
It is packaged again after first containing boron nitride or graphite crucible.The pressure sintering uses discharge plasma sintering mode.The burning
Knot pressure power is 50~65Mpa, and sintering time is 8~12 minutes.Be parallel to sintering pressure direction has compared with perpendicular to pressure direction
Better thermoelectricity capability.
The preparation method of the p-type bismuth telluride thermoelectric material is illustrated further below.
The present invention is using the high-purity element simple substance of Bi, Sb, Cu, Cd, Mg, Te as initial feed, according to the chemistry formed after optimization
Metering is packed into quartz ampoule and carries out Vacuum Package than ingredient, wherein for the material of Mg doping, raw material need to be contained into boron nitride or
Quartz ampoule is enclosed after person's graphite crucible again, directly contacts and reacts with quartz ampoule at high temperature to avoid Mg element.
Being encapsulated in the glove box full of argon atmosphere for quartz ampoule carries out, using plasma or flame gun mode into
Row encapsulates, and quartz ampoule vacuumizes in encapsulation process.
Melting process carries out in vertical melting furnace.Packaged quartz ampoule is put into melting furnace, and with 1.5 DEG C/min's
Heating rate is raised to 700~1150 DEG C (such as 1100 DEG C or so) from room temperature, and constant temperature melts 10~14 hours (such as 12 hours left sides
It is right), then ice water quenching.
Annealing process is completed in tube furnace.Quench the obtained quartz ampoule for filling sample again 350~450 DEG C (such as
400 DEG C) annealing 3~5 days, obtain ingot casting.
The ground Cheng Fenhou of the ingot casting obtained after annealing is prepared into compact block using discharge plasma sintering technique (SPS)
Material.Sintering process is sintered using graphite jig, and sintering temperature is between 380 DEG C to 430 DEG C, and heating rate is about 40
DEG C/min, pressure is 50~65Mpa, in sintering temperature heat-insulation pressure keeping 10min or so.
Enumerate embodiment further below with the present invention will be described in detail.It will similarly be understood that following embodiment is served only for this
Invention is further described, and should not be understood as limiting the scope of the invention, those skilled in the art is according to this hair
Some nonessential modifications and adaptations that bright above content is made all belong to the scope of protection of the present invention.Following examples are specific
Technological parameter etc. is also only an example in OK range, i.e. those skilled in the art can be done properly by the explanation of this paper
In the range of select, and do not really want to be defined in hereafter exemplary specific value.
Embodiment 1
According to chemical formula Bi0.5Sb1.5Te3, Bi0.5Sb1.495Cu0.005Te3And Bi0.5Sb1.45Cu0.05Te3Weigh high pure element
Simple substance is simultaneously packed into quartz ampoule, is packaged in the glove box full of argon inert atmosphere using plasma gun, packaged stone
English pipe is placed in vertical melting furnace and is melted, and is raised to 1100 DEG C with the heating rate of 1.5 DEG C/min, and keep the temperature at such a temperature
Quenching is carried out after 12 hours.The quartz ampoule for filling sample by quenching, which is directly placed into annealing furnace, anneals, and annealing temperature is
400 DEG C, keep the temperature 5 days at such a temperature.Finally burnt by obtained bismuth telluride block grind into powder and by plasma discharging
Knot (SPS) technique is prepared into compact block.Sintering temperature is 410 DEG C, and sintering pressure is 50Mpa, and in the temperature and pressure
Lower heat-insulation pressure keeping 10min.Thermoelectricity capability measurement is parallel and perpendicular to sintering pressure direction to sample after sintering and has carried out table respectively
Sign；Wherein the symbol ∥ expression in attached drawing 2-4 is parallel to sintering pressure direction, and symbol ⊥ is indicated perpendicular to sintering pressure direction.
Referring to Fig. 2, data, which are shown, relatively takes tropism by force since material has, and is being parallel to pressure direction with lower thermal conductivity, to make
Obtaining material has preferable thermoelectricity capability in the direction, for sample Bi0.5Sb1.495Cu0.005Te3, conductivity is significantly higher than
Bi0.5Sb1.5Te3Conductivity, and maximum zT ≈ 1.4 obtains (such as Fig. 2) near 425K.It works in the device of 300K-500K
In temperature range, the zT value that is averaged is 1.24, is relatively not optimised matrix and improves 94%, and when Cu volume is 0.05, material property
Sharply deteriorate, highest zT value only has 0.9, well below the sample that volume is 0.005.
Embodiment 2
According to chemical formula Bi0.5Sb1.5Te3And Bi0.5Sb1.49Cd0.01Te3It weighs high-purity element simple substance and is packed into quartz ampoule,
Vacuum Package is carried out using plasma gun in the glove box full of argon inert atmosphere, packaged quartz ampoule is placed in vertical molten
Melt in furnace and melted, be raised to 1100 DEG C with the heating rate of 1.5 DEG C/min, and is carried out after keeping the temperature 12 hours at such a temperature
Quenching.The quartz ampoule for filling sample by quenching, which is directly placed into annealing furnace, anneals, and annealing temperature is 400 DEG C, in the temperature
Lower heat preservation 5 days.Finally prepared by obtained bismuth telluride block grind into powder and by discharge plasma sintering (SPS) technique
At compact block.Sintering temperature is 405 DEG C, and sintering pressure is 50Mpa, and the heat-insulation pressure keeping 10min at the temperature and pressure.
Referring to Fig. 3, thermoelectricity capability test shows that material prepared is being parallel to sintering pressure direction with more preferably thermoelectricity capability, number
According to display Bi0.5Sb1.49Cd0.01The conductivity of Te3 is compared to Bi0.5Sb1.5Te3Have and be substantially improved, this makes material
Bi0.5Sb1.49Cd0.01Te3Material thermoelectric figure of merit can reach 1.25 in 420K, 1.1 be remained in 500K, in bismuth telluride
(300K~500K) average zT can reach 1.15 in power generating device operating temperature range, can satisfy making for bismuth telluride power generating device
With requiring (such as Fig. 3).For forming Bi0.5Sb1.5-yCdyTe3, as y=0.01, the zT value of material can achieve in 420K
1.25, the average zT value in 300K-500K warm area is 1.15, is relatively not optimised matrix and improves 80%.
Embodiment 3
According to chemical formula Bi0.5Sb1.5Te3And Bi0.5Sb1.49Mg0.01Te3High-purity element simple substance is weighed, wherein sample
Bi0.5Sb1.5Te3Raw material can directly enclose quartz ampoule, and sample Bi0.5Sb1.49Mg0.01Te3Raw material need to first contain into boron nitride
Quartz ampoule is enclosed after in crucible again, encapsulation process is carried out in the glove box full of argon inert atmosphere using plasma gun, envelope
The quartz ampoule installed is placed in vertical melting furnace and is melted, and is raised to 1000 DEG C with the heating rate of 1.5 DEG C/min, and in the temperature
Degree carries out quenching after lower 12 hours of heat preservation.The quartz ampoule for filling sample by quenching, which is directly placed into annealing furnace, anneals, and moves back
Fiery temperature is 400 DEG C, keeps the temperature 5 days at such a temperature.Finally by obtained bismuth telluride ingot casting grind into powder and pass through electric discharge
Plasma agglomeration (SPS) technique is prepared into compact block.Sintering temperature is 405 DEG C, and sintering pressure is 50Mpa, and in the temperature
Heat-insulation pressure keeping 10min under degree and pressure.Referring to Fig. 4, thermoelectricity capability test shows that material prepared is being parallel to sintering pressure
Direction has more preferably thermoelectricity capability, sample Bi0.5Sb1.49Mg0.01Te3Conductivity compared to Bi0.5Sb1.5Te3Have substantially
It is promoted, so that material Bi0.5Sb1.49Mg0.01Te3Material thermoelectric figure of merit can reach 1.1 in 410K, remain in 500K
0.9, (300K~500K) average zT can reach 1 in bismuth telluride power generating device operating temperature range, better meet telluride
The requirement (such as Fig. 4) of bismuth power generating device.For forming Bi0.5Sb1.5-zMgzTe3, as z=0.01, the zT value of material exists
Reach 1.1 when 410K, the average zT in 300K -500K warm area is 1, improves 64% compared with matrix.
Since the material there can be certain orientation under the effect of the pressure during the sintering process, cause parallel and vertical
It is directly had differences in the thermoelectricity capability of pressure direction, after tested, material according to the present invention has being parallel to pressure direction
Lower thermal conductivity, so that the direction also has more preferably thermoelectricity capability.The characteristics of cleavage easy in view of bismuth telluride, the party
To that there can be preferable processability, waste, save the cost can effectively avoid.
Still there is good thermoelectricity capability when high-volume producing on a large scale using material prepared by said components and technique, and
With good repeatability, the requirement of industrial mass manufacture can satisfy.
Claims (5)
1. a kind of p-type bismuth telluride thermoelectric material suitable for low-temperature electricity-generating, which is characterized in that the constitutional chemistry of the thermoelectric material
Formula is Bi0.5Sb1.5-xMxTe3, wherein M be Cd or Mg, 0 x≤0.04 <,zTValue can reach near 450 K 1.2 with
On.
2. a kind of preparation method suitable for the p-type bismuth telluride thermoelectric material of low-temperature electricity-generating, feature as described in claim 1 exist
In, comprising:
(1) pure element simple substance is weighed according to stoichiometric ratio and Vacuum Package is carried out to it, obtain sample；
(2) it will be quenched behind at 700~1150 DEG C of gained sample melt process 10~14 hours, then moved back at 350~450 DEG C
Fire processing 3~7 days；
(3) graphite jig is packed into after gained ingot casting being pulverized, pressure sintering obtains the p-type for being suitable for low-temperature electricity-generating
Bismuth telluride thermoelectric material.
3. preparation method according to claim 2, which is characterized in that the Vacuum Package is sealed using plasma or flame gun
Dress mode encloses raw material in quartz ampoule, wherein the material of Mg element doping need to contain in advance after boron nitride or graphite crucible again into
Row encapsulation.
4. preparation method according to claim 2, which is characterized in that the Vacuum Package under inert gas protection into
Row.
5. the preparation method according to any one of claim 2-4, which is characterized in that the pressure sintering is using electric discharge
Plasma sintering technique, sintering temperature are 380~430 DEG C, and sintering pressure is 50~65MPa, and sintering time is 8~12 minutes.
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| CN108531795B (en) * | 2018-03-07 | 2020-09-22 | 南方科技大学 | N-type Mg-Sb based room temperature thermoelectric material and preparation method thereof |
| CN111477736B (en) * | 2019-01-24 | 2022-09-16 | 中国科学院宁波材料技术与工程研究所 | Bismuth telluride-based thermoelectric material and preparation method thereof |
| US11404621B2 (en) | 2019-02-22 | 2022-08-02 | Institute Of Physics, Chinese Academy Of Sciences | Mg-Sb-based thermoelement, preparation method and application thereof |
| CN112079638A (en) * | 2020-09-22 | 2020-12-15 | 哈尔滨工业大学 | P-type bismuth telluride-based thermoelectric material with high thermoelectric and mechanical properties and preparation method thereof |
| CN112777573B (en) * | 2021-03-24 | 2022-05-10 | 哈尔滨工业大学 | Solar thermoelectric cell system based on boron nitride and bismuth telluride nano composite material and manufacturing method thereof |
| CN115216846B (en) * | 2022-05-26 | 2023-11-24 | 杭州大和热磁电子有限公司 | P-type bismuth telluride alloy material, preparation method and application thereof |
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