CN106986315A - A kind of p-type bismuth telluride thermoelectric material and preparation method suitable for low-temperature electricity-generating - Google Patents
A kind of p-type bismuth telluride thermoelectric material and preparation method suitable for low-temperature electricity-generating Download PDFInfo
- Publication number
- CN106986315A CN106986315A CN201610040958.2A CN201610040958A CN106986315A CN 106986315 A CN106986315 A CN 106986315A CN 201610040958 A CN201610040958 A CN 201610040958A CN 106986315 A CN106986315 A CN 106986315A
- Authority
- CN
- China
- Prior art keywords
- sintering
- bismuth telluride
- preparation
- temperature
- thermoelectric material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
Abstract
The present invention relates to a kind of p-type bismuth telluride thermoelectric material and preparation method suitable for low-temperature electricity-generating, the constitutional chemistry formula of the thermoelectric material is Bi0.5Sb1.5-xMxTe3, wherein, 0 ＜ x≤0.04, itszTValue can reach more than 1.2 near 450K, wherein the M is Cu, Cd or Mg.Preparation technology of the present invention is simple, with good repeatability, can meet the requirement of industrial mass manufacture.
Description
Technical field
The invention belongs to thermoelectric material field, it is related to p-type bismuth telluride material and preparation method after optimization, the material exists
Nearby warm area has excellent thermoelectricity capability to 450K, and the use requirement of bismuth telluride power generating device is met well.
Background technology
Thermoelectric generation technology can realize the mutual conversion of heat energy and electric energy using thermoelectric material., can using Seebeck effect
So that low-quality industrial waste heat to be converted to the electric energy of high-quality, and have the advantages that green non-pollution, reliability are high.Thermoelectricity material
The temperature and material at high/low temperature end have relation in itself when the conversion efficiency of material and work, and the thermoelectricity capability of wherein material is excellent with thermoelectricity
Value zT is evaluated, and is defined as zT=S2σ T/ κ, wherein S are Seebeck coefficient, and σ is electrical conductivity, and T is absolute temperature, κ tables
Show thermal conductivity.The zT values of material are higher, and its thermoelectricity capability is also higher.
Bismuth telluride is a kind of conventional thermoelectric material, and degree of commercialization is higher, and conventional p-type bismuth telluride material is at present
Bi2Te3With Sb2Te3Solid solution compound, mainly prepared by preparation methods such as zone-melting process, descent method, powder metallurgy.
It can wherein be prepared with the bismuth telluride monocrystal material for taking tropism by force, and had most along the direction of growth using zone-melting process and descent method
Good thermoelectricity capability, but be due to that legibility is managed, it can cause the waste of material in process.In addition, powder metallurgy is also a kind of
Important preparation method, this method is simple and easy to apply, and can greatly improve mechanics of materials intensity, with more preferable processing characteristics,
But in sintering process, material can produce certain orientation under the inducing action of pressure, therefore need to be according to sintering pressure direction
Performance is transported the thermoelectricity of evaluating material.
Bi0.5Sb1.5Te3It is composition more common at present, at room temperature with excellent thermoelectricity capability, therefore is often used as room
Thermoelectric cooling device near temperature, the technology matched therewith is also more complete.But the work temperature of Thermoelectric Generator temperature end
Degree is in 500K or so, traditional bismuth telluride material Bi0.5Sb1.5Te3Intrinsic excitation occurs near this temperature causes material property
Drastically deteriorate, it is impossible to meet the use requirement of bismuth telluride power generating device.
Patent document 1 provides a kind of polynary thermoelectric alloy material, the material be designed by the compositions of Bi-Te sills,
Plasma discharging spark sintering SPS, so that reaching improves the purpose of thermoelectricity capability.It is 0.05 mainly by molar fraction
The Sb elements of Cu element substitution equal mole fractions, constitute quaternary Cu-Bi-Sb-Te alloy materials, its specific proportioning components
For Cu0.05Bi0.5Sb1.45Te3.Material advantages：It can be applied to refrigeration or middle low-temperature electricity-generating field；The device being made has operation can
Lean on, long lifespan, higher thermoelectricity capability.In 442K, Seebeck factor alpha=173.2 (μ V/K) of material, conductance
Rate σ=8.0 × 104Ω-1.m-1, thermal conductivity κ=0.88 (W.K-1.m-1), dimensionless thermoelectric figure of merit ZT=1.2.Material has ring
Property is protected, it is pollution-free, it is noiseless, it is a kind of green energy resource material.Material is prepared using conventional powder metallurgic method, technique letter
It is single.But the due orientation of bismuth telluride material is not considered in the patent, and the accuracy of data acquisition is influenceed, may causing property
Can over-evaluate；The annealing process that have ignored causes material crystalline not exclusively, and electrical property has deteriorated；Introducing excessive Cu can lead
Cause local separate out to form impurities phase, be unfavorable for the lifting of material property.Importantly, can not be by adjusting Cu in the patent
Volume is realized to the continuous controllable of material property, and flexibility is lacked in production application.
Patent document 2CN1804078A Bi-Te base thermoelectricity materials and preparation technology are related to the Bi-Te bases of field of new materials
Thermoelectric material and preparation technology.Mainly by Sb element of the molar fraction for 0.2 Ag element substitution equal mole fractions,
Quaternary Bi-Sb-Ag-Te alloy materials are constituted, are constituted as Bi0.5Sb1-xAgxTe3Wherein, x=0.1~0.4.Prepare work
Skill is that material is synthesized by vacuum melting, and synthesis temperature is 950~1050 DEG C, and generated time is within 10 hours, after ball milling
Powder through plasma discharging spark sintering (SPS) shape, sintering temperature be 300~400 DEG C, 30~50MPa of sintering pressure.
Material advantages：Applied to refrigeration or middle low-temperature electricity-generating component, with reliable, long lifespan, higher thermoelectricity capability.
During 554K, Seebeck factor alpha=143.8 (μ V/K) of material, the Ω -1m-1 of conductivityσ=6.8 × 104, thermal conductivity
Rate κ=0.57 (WK-1m-1), dimensionless thermoelectric figure of merit ZT=1.37 p-type Bi-Te base thermoelectricity materials, nothing
Pollution, it is noiseless, it is a kind of green energy resource material.But Ag is produced into as noble metal by being significantly increased in the patent
This, it is difficult to application.
In non-patent literature 1 quaternary alloy Zn is prepared there is provided a kind of SPS methodsxBi0.5Sb1.5-xTe3(x=0.05-0.4) it is and its micro-
See structure and electric property.Quaternary Zn is prepared using plasma discharging spark sintering method (SPS)xBi0.5Sb1.5-xTe3(x=0.05-
0.4) (molar fraction, similarly hereinafter) alloy, when Zn amount is 0.05, there is maximum in the electrical conductivity of material, and room temperature is attached
Its nearly value is 2.5 × 10^4 Ω ^-1m^-1, about the 1.35 of ternary Bi0.5Sb1.5Te3 alloys times.Under synthermal, work(
Rate factor P values also obtain maximum (1.65 × 10^-3Wm^-1K^-2), but still well below the tellurium having been commercialized at present
Change bismuth material (30~40 × 10-3Wm-1K-2), it is difficult to replace prior art.
And although the research work of current bismuth telluride makes material property obtain certain lifting, but exist in actual applications
Poor controllability or the high shortcoming of cost.Therefore, this field is in the urgent need to economy, controllability and the superior bismuth telluride material of stability
Expect to meet the use requirement of power generating device.
Bibliography
A kind of middle polynary electrothermal alloys of low temperature p-type with high thermoelectric figure of merit ZT of patent document 1CN1279201C；
Patent document 2CN1804078A Bi-Te base thermoelectricity materials and preparation technology are related to the Bi-Te base thermoelectricity materials of field of new materials
Material and preparation technology；
Cui of non-patent literature 1 teaches woods, and Xu Xuebo, Yang Wei .SPS methods prepare quaternary alloy ZnxBi0.5Sb1.5-xTe3(x=0.05-0.4)
Microstructure and electric property [J] Rare Metals Materials and engineering, 2006,35 (9):1475-1478..
The content of the invention
In view of the above-mentioned problems, small while ensureing thermoelectric figure of merit and can be extensive present invention aims at a kind of doping ratio is provided
The preparation method of the p-type bismuth telluride thermoelectric material suitable for low-temperature electricity-generating of production.
In order to reach this purpose, the invention provides a kind of p-type bismuth telluride thermoelectric material suitable for low-temperature electricity-generating, its
It is characterised by, the constitutional chemistry formula of the thermoelectric material is Bi0.5Sb1.5-xMxTe3, wherein, 0 ＜ x≤0.04, its zT value
More than 1.2 are can reach near 450K.
It is preferred that the M is Cu, Cd or Mg.Due to the introducing of Cu, Cd, Mg element in the composition, effectively
Material carrier concentration is improved, it is suppressed that intrinsic excitation, so that thermoelectricity capability of the material near 500K is significantly carried
Rise.
Present invention also offers a kind of preparation method of the p-type bismuth telluride thermoelectric material suitable for low-temperature electricity-generating, including：
(1) pure element simple substance is weighed according to stoichiometric proportion and Vacuum Package is carried out to it, obtain sample；
(2) by Quenching Treatment after melt process at 700~1150 DEG C of gained sample 10~14 hours, then anneal at 350~450 DEG C
Processing 3~7 days；
(3) graphite jig is loaded after gained ingot casting is pulverized, pressure sintering obtains the p-type tellurium for being applied to low-temperature electricity-generating
Change bismuth thermoelectric material.
It is preferred that the Vacuum Package is enclosed raw material in quartz ampoule using plasma or flame gun packaged type, wherein Mg
The material of element doping is packaged again after need to containing boron nitride or graphite crucible in advance, so as not to Mg elements at high temperature with quartz
Pipe directly contact reacts.
Carried out it is preferred that the Vacuum Package is lower under inert gas shielding.
It is preferred that the pressure sintering is uses discharge plasma sintering technique, sintering temperature is 380~430 DEG C, sintering
Pressure is 50~65Mpa, and sintering time is 8~12 minutes.
Preparation technology of the present invention is simple, with good repeatability, can meet the requirement of industrial mass manufacture.
Brief description of the drawings
Fig. 1 is material preparation flow schematic diagram；
Fig. 2 is Bi0.5Sb1.5Te3And Cu doped samples Bi0.5Sb1.495Cu0.005Te3, Bi0.5Sb1.45Cu0.05Te3Thermoelectricity capability：
(a) thermal conductivity, (b) electrical conductivity, (c) Seebeck coefficient, (d) thermoelectric figure of merit zT；
Fig. 3 is Bi0.5Sb1.5Te3And Cd doped samples Bi0.5Sb1.49Cd0.01Te3Thermoelectricity capability：(a) thermal conductivity, (b) conductance
Rate, (c) Seebeck coefficient, (d) thermoelectric figure of merit zT；
Fig. 4 is Bi0.5Sb1.5Te3And Mg doped samples Bi0.5Sb1.49Mg0.01Te3Thermoelectricity capability：(a) thermal conductivity, (b) conductance
Rate, (c) Seebeck coefficient, (d) thermoelectric figure of merit zT.
Embodiment
The present invention has excellent by the p-type bismuth telluride material after Cu, Cd and Mg doping optimization near 450K
Thermoelectricity capability, can meet the use requirement of power generating device, it is characterised in that material specifically comprises Bi0.5Sb1.5-xMxTe3, its
In, 0 ＜ x≤0.04, the M is Cu, Cd or Mg.It is can be achieved in x spans of the present invention to material property
It is continuous controllable, and be optimum doping concentration as 0.005≤x≤0.01, more than the deterioration that the volume can cause material property.
The preparation of p-type bismuth telluride material of the present invention passes through Vacuum Package, melting, quenching, annealing and the technique of pressure sintering
Realize.Accompanying drawing 1 is preparation technology flow chart.On encapsulation, pure element simple substance is weighed according to stoichiometric proportion and it is carried out very
Sky encapsulation.Melt process selection melt process 10~14 hours at 700~1150 DEG C.Made annealing treatment at 350~450 DEG C
3~7 days, the pressure sintering at 380~430 DEG C after pulverizing.The Vacuum Package is carried out under inert protective gas.Institute
State Vacuum Package to enclose raw material in quartz ampoule using plasma or flame gun packaged type, wherein the material of Mg element dopings is needed
It is packaged again after containing boron nitride or graphite crucible in advance.The pressure sintering uses discharge plasma sintering mode.It is described to burn
Knot pressure power is 50~65Mpa, and sintering time is 8~12 minutes.Have parallel to sintering pressure direction compared with perpendicular to pressure direction
More preferable thermoelectricity capability.
The preparation method of the p-type bismuth telluride thermoelectric material is illustrated further below.
The present invention is using the high-purity element simple substance of Bi, Sb, Cu, Cd, Mg, Te as initial feed, according to what is constituted after optimization
Stoichiometric proportion dispensing, and load quartz ampoule progress Vacuum Package, wherein the material adulterated for Mg, need to contain raw material into nitrogen
Quartz ampoule is enclosed again after changing boron or graphite crucible, is reacted with avoiding Mg elements from directly being contacted with quartz ampoule at high temperature.
Being encapsulated in the glove box full of argon gas atmosphere for quartz ampoule is carried out, and using plasma or flame gun mode are carried out
Quartz ampoule is vacuumized in encapsulation, encapsulation process.
Melting process is carried out in vertical melting furnace.Packaged quartz ampoule is put into melting furnace, and with 1.5 DEG C/min liter
Warm speed is raised to 700~1150 DEG C (such as 1100 DEG C or so) from room temperature, and constant temperature is melted (such as 12 hours 10~14 hours
Left and right), then frozen water quenching.
Annealing process is completed in tube furnace.Quench the obtained quartz ampoule for filling sample again at 350~450 DEG C (for example
400 DEG C) anneal 3~5 days, obtain ingot casting.
The ground Cheng Fenhou of the ingot casting obtained after annealing is prepared into compact block material using discharge plasma sintering technique (SPS)
Material.Sintering process is sintered using graphite jig, and sintering temperature is between 380 DEG C to 430 DEG C, heating rate is about 40
DEG C/min, pressure is 50~65Mpa, in sintering temperature heat-insulation pressure keeping 10min or so.
Embodiment is enumerated further below to describe the present invention in detail.It will similarly be understood that following examples are served only for this hair
It is bright to be further described, it is impossible to be interpreted as limiting the scope of the invention, those skilled in the art is according to the present invention's
Some nonessential modifications and adaptations that the above is made belong to protection scope of the present invention.Following specific technique ginsengs of example
Number etc. is also only an example in OK range, i.e. those skilled in the art can be done in suitable scope by this paper explanation
Selection, and do not really want to be defined in the concrete numerical value of hereafter example.
Embodiment 1
According to chemical formula Bi0.5Sb1.5Te3, Bi0.5Sb1.495Cu0.005Te3And Bi0.5Sb1.45Cu0.05Te3Weigh high-purity element simple substance and load
Quartz ampoule, is packaged in the glove box full of argon inert atmosphere using plasma gun, and packaged quartz ampoule is placed in vertical
Melted in melting furnace, be raised to 1100 DEG C with 1.5 DEG C/min heating rate, and be incubated at such a temperature after 12 hours
Carry out quenching.The quartz ampoule for filling sample by quenching is directly placed into annealing furnace and annealed, and annealing temperature is 400 DEG C, at this
At a temperature of be incubated 5 days.Finally by obtained bismuth telluride block grind into powder and pass through discharge plasma sintering (SPS) work
Skill is prepared into compact block.Sintering temperature is 410 DEG C, and sintering pressure is 50Mpa, and insulation is protected at the temperature and pressure
Press 10min.Thermoelectricity capability measurement is parallel and perpendicular to sintering pressure direction to sample after sintering and characterized respectively；It is wherein attached
Symbol ∥ in Fig. 2-4 represents that, parallel to sintering pressure direction, symbol ⊥ is represented perpendicular to sintering pressure direction.Referring to Fig. 2,
Data display relatively takes tropism by force because material has, and has lower thermal conductivity parallel to pressure direction, so that material is at this
Direction has preferable thermoelectricity capability, for sample Bi0.5Sb1.495Cu0.005Te3, its electrical conductivity is significantly higher than Bi0.5Sb1.5Te3's
Electrical conductivity, and maximum zT ≈ 1.4 obtain (such as Fig. 2) near 425K.In 300K-500K device operating temperature
In interval, its average zT value is 1.24, is relatively not optimised matrix and improves 94%, and when Cu volumes are 0.05, material property
Drastically deteriorate, highest zT values only have 0.9, well below the sample that volume is 0.005.
Embodiment 2
According to chemical formula Bi0.5Sb1.5Te3And Bi0.5Sb1.49Cd0.01Te3Weigh high-purity element simple substance and load quartz ampoule, lazy full of argon gas
Property atmosphere glove box in using plasma gun carry out Vacuum Package, packaged quartz ampoule, which is placed in vertical melting furnace, to be melted
Melt, be raised to 1100 DEG C with 1.5 DEG C/min heating rate, and carry out quenching after 12 hours of insulation at such a temperature.By quenching
The quartz ampoule for filling sample be directly placed into annealing furnace anneal, annealing temperature be 400 DEG C, at such a temperature be incubated 5 days.Finally
Compact block is prepared into by obtained bismuth telluride block grind into powder and by discharge plasma sintering (SPS) technique.Burn
Junction temperature is 405 DEG C, and sintering pressure is 50Mpa, and the heat-insulation pressure keeping 10min at the temperature and pressure.Referring to Fig. 3, heat
Electric performance test shows that prepared material has more preferably thermoelectricity capability, data display parallel to sintering pressure direction
Bi0.5Sb1.49Cd0.01Te3 electrical conductivity is compared to Bi0.5Sb1.5Te3Have and be substantially improved, this causes material Bi0.5Sb1.49Cd0.01Te3
Material thermoelectric figure of merit can reach 1.25 in 420K, and 1.1 are remained within 500K, in bismuth telluride power generating device operating temperature
In the range of (300K~500K) average zT can reach 1.15, the use requirement of bismuth telluride power generating device can be met (as schemed
3).For composition Bi0.5Sb1.5-yCdyTe3, as y=0.01, the zT values of material can reach 1.25 in 420K, 300
Average zT values in K-500K warm areas are 1.15, are relatively not optimised matrix and improve 80%.
Embodiment 3
According to chemical formula Bi0.5Sb1.5Te3And Bi0.5Sb1.49Mg0.01Te3Weigh high-purity element simple substance, wherein sample Bi0.5Sb1.5Te3Original
Material can directly enclose quartz ampoule, and sample Bi0.5Sb1.49Mg0.01Te3Raw material first need to contain in boron nitride crucible after enclose stone again
Ying Guan, encapsulation process is carried out in the glove box full of argon inert atmosphere using plasma gun, and packaged quartz ampoule is placed in vertical
Melted in formula melting furnace, be raised to 1000 DEG C with 1.5 DEG C/min heating rate, and be incubated 12 hours at such a temperature
After carry out quenching.The quartz ampoule for filling sample by quenching is directly placed into annealing furnace and annealed, and annealing temperature is 400 DEG C,
It is incubated 5 days at this temperature.Finally by obtained bismuth telluride ingot casting grind into powder and pass through discharge plasma sintering (SPS)
Technique is prepared into compact block.Sintering temperature is 405 DEG C, and sintering pressure is 50Mpa, and is incubated at the temperature and pressure
Pressurize 10min.Referring to Fig. 4, thermoelectricity capability test shows that prepared material has more preferably parallel to sintering pressure direction
Thermoelectricity capability, sample Bi0.5Sb1.49Mg0.01Te3Electrical conductivity compared to Bi0.5Sb1.5Te3Have and be substantially improved so that material
Bi0.5Sb1.49Mg0.01Te3Material thermoelectric figure of merit can reach 1.1 in 410K, 0.9 be remained within 500K, in telluride
(300K~500K) average zT can reach 1 in bismuth power generating device operating temperature range, preferably meet bismuth telluride electric organ
The use requirement (such as Fig. 4) of part.For composition Bi0.5Sb1.5-zMgzTe3, as z=0.01, the zT values of material are in 410K
When reach 1.1, the average zT in 300K -500K warm areas be 1, compared with matrix improve 64%.
Because the material there can be certain orientation under the effect of the pressure in sintering process, cause parallel and vertical
Had differences in the thermoelectricity capability of pressure direction, after tested, material involved in the present invention have parallel to pressure direction it is lower
Thermal conductivity so that the direction also has more preferably thermoelectricity capability.The characteristics of cleavage easy in view of bismuth telluride, the direction can
With preferable processability, waste can be prevented effectively from, it is cost-effective.
The material prepared using said components and technique still has good thermoelectricity capability, and tool when high-volume producing on a large scale
There is good repeatability, the requirement of industrial mass manufacture can be met.
Claims (6)
1. a kind of p-type bismuth telluride thermoelectric material suitable for low-temperature electricity-generating, it is characterised in that the constitutional chemistry formula of the thermoelectric material is Bi0.5Sb1.5-xMxTe3, wherein, 0 ＜ x≤0.04, itszTValue can reach more than 1.2 near 450 K.
2. it is applied to the p-type bismuth telluride thermoelectric material of low-temperature electricity-generating according to claim 1, it is characterised in that the M is Cu, Cd or Mg.
3. a kind of preparation method for the p-type bismuth telluride thermoelectric material for being applied to low-temperature electricity-generating as claimed in claim 1 or 2, it is characterised in that including：
（1）Pure element simple substance is weighed according to stoichiometric proportion and Vacuum Package is carried out to it, sample is obtained；
（2）Made annealing treatment 3~7 days by Quenching Treatment after melt process at 700~1150 DEG C of gained sample 10~14 hours, then at 350~450 DEG C；
（3）Load graphite jig after gained ingot casting is pulverized, pressure sintering obtains the p-type bismuth telluride thermoelectric material for being applied to low-temperature electricity-generating.
4. preparation method according to claim 3, it is characterised in that the Vacuum Package is enclosed raw material in quartz ampoule using plasma or flame gun packaged type, and wherein the material of Mg element dopings is packaged again after need to containing boron nitride or graphite crucible in advance.
5. the preparation method according to claim 3 or 4, it is characterised in that the Vacuum Package is carried out under inert gas shielding.
6. the preparation method according to any one of claim 3-5, it is characterised in that the pressure sintering is uses discharge plasma sintering technique, and sintering temperature is 380~430 DEG C, and sintering pressure is 50~65Mpa, and sintering time is 8~12 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610040958.2A CN106986315B (en) | 2016-01-21 | 2016-01-21 | A kind of p-type bismuth telluride thermoelectric material and preparation method suitable for low-temperature electricity-generating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610040958.2A CN106986315B (en) | 2016-01-21 | 2016-01-21 | A kind of p-type bismuth telluride thermoelectric material and preparation method suitable for low-temperature electricity-generating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106986315A true CN106986315A (en) | 2017-07-28 |
| CN106986315B CN106986315B (en) | 2019-04-16 |
Family
ID=59414424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610040958.2A Active CN106986315B (en) | 2016-01-21 | 2016-01-21 | A kind of p-type bismuth telluride thermoelectric material and preparation method suitable for low-temperature electricity-generating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106986315B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108531795A (en) * | 2018-03-07 | 2018-09-14 | 南方科技大学 | The basal cells n-type Mg-Sb warm electric material and preparation method thereof |
| CN111477736A (en) * | 2019-01-24 | 2020-07-31 | 中国科学院宁波材料技术与工程研究所 | Bismuth telluride-based thermoelectric material and preparation method thereof |
| WO2020168531A1 (en) * | 2019-02-22 | 2020-08-27 | 中国科学院物理研究所 | Magnesium-antimony-based thermoelectric element, preparation method therefor, and application thereof |
| CN112079638A (en) * | 2020-09-22 | 2020-12-15 | 哈尔滨工业大学 | P-type bismuth telluride-based thermoelectric material with high thermoelectric and mechanical properties and preparation method thereof |
| CN112777573A (en) * | 2021-03-24 | 2021-05-11 | 哈尔滨工业大学 | Solar thermoelectric cell system based on boron nitride and bismuth telluride nano composite material and manufacturing method thereof |
| CN115216846A (en) * | 2022-05-26 | 2022-10-21 | 杭州大和热磁电子有限公司 | P-type bismuth telluride alloy material, preparation method and application thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104555950A (en) * | 2015-01-30 | 2015-04-29 | 中国科学院上海硅酸盐研究所 | Bismuth telluride material with excellent thermoelectric properties at medium temperature zone and method for preparing bismuth telluride material with excellent thermoelectric properties at medium temperature zone |
-
2016
- 2016-01-21 CN CN201610040958.2A patent/CN106986315B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104555950A (en) * | 2015-01-30 | 2015-04-29 | 中国科学院上海硅酸盐研究所 | Bismuth telluride material with excellent thermoelectric properties at medium temperature zone and method for preparing bismuth telluride material with excellent thermoelectric properties at medium temperature zone |
Non-Patent Citations (3)
| Title |
|---|
| CHEN CHEN ET AL;: "Thermoelectric properties of CuyBixSb2-x-yTe3 alloys fabricated by mechanical alloying and spark plasma sintering", 《INTERMETALLICS》 * |
| HUAYI LI ET AL;: "Microstructure and transport properties of copper-doped p-typeBiSbTe alloy prepared by mechanical alloying and subsequent spark plasma", 《JOURNAL OF ALLOYS AND COMPOUNDS》 * |
| YUEWEN ZHANG ET AL;: "Suppressing adverse intrinsic conduction of Bi2Te3 thermoelectric bulks by Sb and Cu co-substitutions via HPHT synthesis", 《RSC ADV.》 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108531795A (en) * | 2018-03-07 | 2018-09-14 | 南方科技大学 | The basal cells n-type Mg-Sb warm electric material and preparation method thereof |
| CN108531795B (en) * | 2018-03-07 | 2020-09-22 | 南方科技大学 | N-type Mg-Sb based room temperature thermoelectric material and preparation method thereof |
| CN111477736A (en) * | 2019-01-24 | 2020-07-31 | 中国科学院宁波材料技术与工程研究所 | Bismuth telluride-based thermoelectric material and preparation method thereof |
| CN111477736B (en) * | 2019-01-24 | 2022-09-16 | 中国科学院宁波材料技术与工程研究所 | Bismuth telluride-based thermoelectric material and preparation method thereof |
| WO2020168531A1 (en) * | 2019-02-22 | 2020-08-27 | 中国科学院物理研究所 | Magnesium-antimony-based thermoelectric element, preparation method therefor, and application thereof |
| US11404621B2 (en) | 2019-02-22 | 2022-08-02 | Institute Of Physics, Chinese Academy Of Sciences | Mg-Sb-based thermoelement, preparation method and application thereof |
| CN112079638A (en) * | 2020-09-22 | 2020-12-15 | 哈尔滨工业大学 | P-type bismuth telluride-based thermoelectric material with high thermoelectric and mechanical properties and preparation method thereof |
| CN112777573A (en) * | 2021-03-24 | 2021-05-11 | 哈尔滨工业大学 | Solar thermoelectric cell system based on boron nitride and bismuth telluride nano composite material and manufacturing method thereof |
| CN112777573B (en) * | 2021-03-24 | 2022-05-10 | 哈尔滨工业大学 | Solar thermoelectric cell system based on boron nitride and bismuth telluride nano composite material and manufacturing method thereof |
| CN115216846A (en) * | 2022-05-26 | 2022-10-21 | 杭州大和热磁电子有限公司 | P-type bismuth telluride alloy material, preparation method and application thereof |
| CN115216846B (en) * | 2022-05-26 | 2023-11-24 | 杭州大和热磁电子有限公司 | P-type bismuth telluride alloy material, preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106986315B (en) | 2019-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106986315B (en) | A kind of p-type bismuth telluride thermoelectric material and preparation method suitable for low-temperature electricity-generating | |
| JP4198055B2 (en) | Method for manufacturing a device for direct thermoelectric energy conversion | |
| CN101080506B (en) | Production method of thermoelectric semiconductor alloy, thermoelectric conversion module and thermoelectric power generating device | |
| CN100391021C (en) | Ag-Pb-Sb-Te thermoelectric materials and preparation process thereof | |
| Sadia et al. | Silicon-rich higher manganese silicides for thermoelectric applications | |
| CN104555950B (en) | Bismuth telluride material with excellent thermoelectric properties at medium temperature zone and method for preparing bismuth telluride material with excellent thermoelectric properties at medium temperature zone | |
| CN103872237B (en) | Copper-sulfur-based high-performance thermoelectric material and preparation method thereof | |
| JP5333001B2 (en) | Thermoelectric material and manufacturing method thereof | |
| CN108238796B (en) | Copper seleno solid solution thermoelectric material and preparation method thereof | |
| JP5468554B2 (en) | Semiconductor materials containing doped tin telluride for thermoelectric applications | |
| CN109671840B (en) | Antimony tellurium selenium matrix alloy construction method for thermoelectric material and antimony tellurium selenium matrix thermoelectric material | |
| CN107799646A (en) | A kind of alloy thermoelectric semiconductor material and preparation method thereof | |
| CN107408618A (en) | Compound semiconductor thermoelectric material and its manufacture method | |
| JP4374578B2 (en) | Thermoelectric material and manufacturing method thereof | |
| Nemoto et al. | Characteristics of a pin–fin structure thermoelectric uni-leg device using a commercial n-type Mg 2 Si source | |
| JP4865531B2 (en) | Yb-AE-Fe-Co-Sb (AE: Ca, Sr, Ba, Ag) based thermoelectric conversion material | |
| US20040244826A1 (en) | Beta-iron disilicate thermoelectric transducing material and thermoelectric transducer | |
| JP5352860B2 (en) | Thermoelectric material and manufacturing method thereof | |
| JP5281308B2 (en) | Thermoelectric material and manufacturing method thereof | |
| CN111162160B (en) | P-type cubic phase Ge-Se-based thermoelectric material and preparation method thereof | |
| CN108198934B (en) | Composite thermoelectric material and preparation method thereof | |
| CN109776093B (en) | Preparation method of nano composite thermoelectric material | |
| CN109103323A (en) | A method of Sb is replaced by filling Ga, Te and improves based square cobalt mineral conducting material thermoelectricity performance | |
| CN111211215B (en) | Nano composite thermoelectric material and preparation method thereof | |
| CN101307394A (en) | Process for preparing bismuth telluride -based thermoelectric material by liquid quenching cooperated with spark plasma sintering |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |