CN1581460A - Electrode piece for electrostatic chuck, electrostatic chuck device and its adsorptiong method - Google Patents
Electrode piece for electrostatic chuck, electrostatic chuck device and its adsorptiong method Download PDFInfo
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- CN1581460A CN1581460A CNA2004100700363A CN200410070036A CN1581460A CN 1581460 A CN1581460 A CN 1581460A CN A2004100700363 A CNA2004100700363 A CN A2004100700363A CN 200410070036 A CN200410070036 A CN 200410070036A CN 1581460 A CN1581460 A CN 1581460A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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Abstract
Provided is an electrostatic chuck device which is high in holding force of an insulating material and durability to the dielectric breakdown, an electrodeposition sheet for it, and a method for using the electrostatic chuck device. In the electrostatic chuck device, an electrode sheet 10 is composed of an insulating layer 1 made of an insulating material, first/second electrode layers 2, 3 provided on both faces of the insulating layer for generating the potential difference via the insulating layer, and insulating thin films 4, 5 for covering the surfaces of the two electrode layers. The electrode sheet 10 is pasted on a base 7 so that the second electrode layer is located at the base side. The first electrode of the electrostatic chuck device is grounded. A voltage is applied to the second electrode. A body to be adsorbed is adsorbed on the insulating thin film 4.
Description
Technical field
The present invention relates to electrostatic chuck apparatus with electrode slice, use the electrostatic chuck apparatus of this electrode slice.
Background technology
Electrostatic chuck apparatus is because bring into play adsorption function in a vacuum, and easy and simple to handle, so be requisite device in the IC production process.Particularly use the electrostatic chuck apparatus electrode slice of plastic film and Copper Foil formation, because can cheaply make, so use electrostatic chuck apparatus to use the electrostatic chuck apparatus of electrode slice universal wider.
Employed electrostatic chuck apparatus in the IC production process generally is an one pole, in this electrostatic chuck apparatus, by with semiconductor chip as electrode, apply voltage by dielectric, finding has higher absorption affinity.
In recent years, for the insulating properties material of fixed plastics or glass etc., attempting utilizing electrostatic chuck apparatus.At this time, because one pole type electrostatic chuck apparatus is impracticable, so use the dipolar electrostatic chuck of built-in positive pole and two electrodes of negative pole.Such dipolar electrostatic chuck has in the structure that sets positive pole and two electrodes of negative pole with one side, for example structure shown in the patent documentation 1 and 2 or comb shape shape as shown in Figure 6, by between two electrodes, applying thousands of volts voltage, adsorbable insulating properties material.
A representational example of dipolar electrostatic chuck device in the past is a structure as shown in Figure 3, the electrode 8,9 of positive pole and negative pole is arranged at insulating properties film 1 on the same plane, adhered on the base 7 by adhesive layer 6, these electrodes are provided with insulator layer 4.
In this dipolar electrostatic chuck, the insulation between the electrode 8,9 is guaranteed by the organic material (following record is a binding agent etc.) of filling binding agent or adhesive etc.But, have following problem: have foreign matter in bad, binding agent when promptly making etc., in the filling adhesive process, sneak into foreign matter and bubble, thereby cause Nei Fashengyin insulation breakdown between short-term and the fault that produces because of electrode pattern.
In addition, there is following problem: promptly when heating uses electrostatic chuck apparatus to use, the insulating resistance value of binding agent etc. significantly reduces, interelectrode leakage current increases, even or the initial stage do not have different shape, when using when making electrode material, because of electromigration with the metal headed by copper or the silver, insulation breakdown finally takes place to the inside of adhesive layer etc. in electrode material stripping gradually.
In addition, in this electrostatic chuck apparatus, in order to obtain high absorption affinity, and it is more effective to be made into the positive pole and the negative pole arranged opposite of exquisite broach shape.But actual conditions are, because described all problems cause the design of figure to be restricted.
Patent documentation 1: the spy opens flat 11-54602 communique.
Patent documentation 2: the spy opens the 2000-21961 communique.
Summary of the invention
Therefore, the objective of the invention is: the confining force height of insulating properties material is provided, and to the high electrostatic chuck apparatus of the durability of insulation breakdown with electrode slice and use the electrostatic chuck apparatus of this electrode slice.Other purpose of the present invention is: provide by above-mentioned electrostatic chuck apparatus and adsorb the method that is adsorbed body.
Promptly, electrostatic chuck apparatus electrode slice of the present invention is characterized in that: the insulating barrier that is made of the insulating properties material, the 1st electrode layer and the 2nd electrode layer that are provided with on the two sides of this insulating barrier that is used to produce potential difference by this insulating barrier, the insulating properties film that covers these 2 electrode layer surface constitute.Preferably above-mentioned the 1st electrode layer forms figure.
Electrostatic chuck apparatus of the present invention is characterized in that: above-mentioned electrostatic chuck apparatus is adhered on the base with electrode slice, and make the 2nd electrode layer be positioned at base one side and constitute.
In addition, the adsorption method of electrostatic chuck apparatus of the present invention, it is characterized in that: with the 1st electrode layer of electrostatic chuck apparatus and a ground connection in the 2nd electrode layer, apply voltage, will be adsorbed on the insulating properties film that body is adsorbed on the 1st electrode layer one side at the another one electrode layer.
Below, with reference to description of drawings the present invention.Fig. 2 is the pattern sectional view of electrostatic chuck apparatus of the present invention with an example of electrode slice.In Fig. 2, the 1st electrode layer 2 and the 2nd electrode layer 3 are arranged at the two sides of the insulating barrier 1 that is made of the insulating properties material, and surface the being insulated property film 4 of these electrode layers and 5 covers.This electrostatic chuck apparatus is constructed as follows with electrode slice: the 1st electrode layer 2 is made of the conductive part that forms diagram shape, and the 1st electrode layer 2 and the 2nd electrode layer 3 produce potential difference by insulating barrier 1.
Fig. 1 is the pattern sectional view of an example of electrostatic chuck apparatus of the present invention.This electrostatic chuck apparatus, the electrode slice 10 of above-mentioned structure shown in Figure 2 is bonded on the base 7 by adhesive layer 6, and makes the 2nd electrode layer be positioned at base one side and constitute, and the insulating properties film 4 of the 1st electrode one side is formed with adsorption plane.
Electrostatic chuck apparatus electrode slice of the present invention, by insulating barrier the 1st electrode layer and the 2nd electrode layer are set, apply voltage in order between this two electrode, to produce potential difference, so even the contingency electrode pattern has different shape, sneaks into foreign matter or bubble, because between two electrodes, be filled with the insulating barrier of high-insulativity, so not influenced by it.
Electrostatic chuck apparatus of the present invention is with electrode slice and the electrostatic chuck apparatus that uses this electrode slice to make, and finding has stronger absorption affinity to the insulating properties material, and to the durability height of insulation breakdown, and then also can under hot environment, use.Particularly on the purposes that is adsorbed body that absorption is made of the insulating properties material of glass or plastics etc., value is high.
Below, each layer that constitutes electrostatic chuck apparatus of the present invention described.
Be filled in the insulating properties material of the insulating barrier between the 1st electrode layer and the 2nd electrode layer as formation, pottery, plastic film etc. are arranged, though material is not subjected to any qualification, the film of preferred polyimides, PETG, polyace naphthylene, aromatic polyamide, polyolefin, polyether sulfone, polyether-ketone, polytetrafluoroethylene etc.The polyimide film of high-fire resistance particularly, even because leakage current does not increase yet when high temperature, it is minimum that electromigratory danger takes place, so can preferably use.In addition, insulating barrier also can be that above-mentioned material is laminated into more than 2 layers or 2 layers.
Though the thickness of insulating barrier is without any qualification, easy if consideration obtains easily, handles, then thickness is preferably in the scope of 12.5～300 μ m.The plastic film of preferred especially thick 25～150 μ m.If the thickness of insulating barrier is thinner than 12.5 μ m, then insulation breakdown takes place in the insulating properties deficiency under the voltage of thousands of volt potential difference, so not preferred.When using the film thinner than 12.5 μ m, can be stacked 2 or 2 use with upper film.In addition, when using the film thicker, because absorption affinity is low, so not preferred than 300 μ m.When using the described film more than 2 layers, can be designed as and comprise stacked aggregate thickness and be no more than 300 μ m with adhesive thickness.
Though the one side at above-mentioned insulating barrier is provided with the 1st electrode layer, at another side the 2nd electrode layer is set.But these electrode layers can be partly to cover comprehensive universe conductive part by conductivity to constitute except the edge of insulating barrier, in addition, also can be to be made of the conductive part that conductivity partly forms diagram shape.But, by any one party of the 1st electrode layer and the 2nd electrode layer form that the conductive part of diagram shape constitutes for more preferably, particularly the conductive part that forms diagram shape by the 1st electrode layer constitutes most preferably.Though the figure form of these electrodes is not particularly limited,, for example, if be designed to form broach shape shown in Figure 4 figure or
The figure of shape makes conductivity part and insulating properties portion boundary line elongated, then can obtain high absorption affinity, so preferred.In addition, the 2nd electrode layer also can form complicated figure, and still, if consider the easy of making, universe as shown in Figure 5 is that the electrode layer of conductive part is the most practical.
The 1st electrode layer and the 2nd electrode layer can form various metal formings, conductive membrane, conductive paste by evaporation, adhesion, coating etc.Though material and thickness is without any restriction,, thickness is if can guarantee for a long time in the scope of conductivity, and then thin is preferred, and thickness is smaller or equal to 150 μ m, and is particularly suitable smaller or equal to metal forming, for example Copper Foil of 35 μ m.Thickness is as greater than 150 μ m, and so graphic making difficulty then is not preferred.
In order to ensure the insulating properties to absorbate and base, the 1st electrode layer and the 2nd electrode layer cover with the insulating properties film respectively.In addition, in order to prevent to cause discharge, the edge of the 1st electrode layer and the 2nd electrode layer must be the state with the insulating properties elastic membrane sealing, in order to avoid outside being exposed to.
Suitable material as the insulating properties film, the employed insulating properties material of insulation identical materials between use and described the 1st electrode layer-the 2nd electrode layer, in addition, also can use with the various inorganic material headed by the insulating properties aluminium oxide, with the macromolecular material headed by the epoxy resin component.
The thickness of the insulating properties film that is provided with on the 1st electrode layer is set at the scope of 12.5～300 μ m.If the distance from the absorbate to the electrode layer is less than 12.5 μ m, then the mechanical strength deficiency does not have durability; If greater than 300 μ m, then absorption affinity descends.More wish to be set at the scope of 25～150 μ m, but when reality is used,, can suitably determine according to the characteristic of desirable function and materials used as electrostatic chuck apparatus.In addition, the thickness of the insulating properties film that on the 2nd electrode layer, is provided with, and base between guarantee that insulating properties is just passable, so can suitably set.
In addition, the insulating properties film can use that individual layer constitutes, the stacked formation of a plurality of materials any.When being stepped construction, if guarantee the state of insulating properties, even then interior bag conductive material also has no relations.
Electrostatic chuck apparatus of the present invention is formed by the above-mentioned electrode slice of adhesion on base.At this moment, make the 2nd electrode layer of electrode slice be positioned at base one side bonds, making the insulating properties cover layer that covers the 1st electrode layer is adsorption plane.As base, limit especially, for example can use the metab of aluminium backing etc.
Among the present invention, insulating properties film, electrode layer, insulating barrier and base stacked can be implemented by suitable method, for example, can come bonding by adhesive layer.As the binding agent that constitutes adhesive layer, preferred dielectric binding agent.But in order to ensure high insulating reliability, the binding agent of formations such as the imide resin that contracts with epoxy resin, phenolic resins, diallyl phthalate ester resin, thermoplastic polyimide resin, maleic anhydride is more suitable.These resins can use separately, also can mix more than 2 kinds or 2 kinds and use.And then, for flexibility is provided, can cooperate with the various elastomeric materials headed by the NBR, in order to improve heat conductivity, also can disperse with the various inorganic fillers headed by metal powder or the aluminium oxide.In order to improve bonding characteristic, add coupling agent and also produce effect.In addition, binding agent can be any state of liquid, solid.In addition, if with part that electrode layer is connected beyond because do not need high-insulativity, thus when selected binding agent etc. without any restriction, according to circumstances, also can use the binding agent of conductivity etc.
The thickness of adhesive layer, if in the scope that can guarantee interlaminar bonding power, thin is preferred.Concrete is smaller or equal to 100 μ m, more preferably 1～50 μ m.
Though about the laminating method of binding agent also without any restriction, but, in order to ensure operational thickness and precision after easy and stacked, wish to adopt following method: at normal temperatures promptly, solid binder is coated to the method for using dry film to duplicate and using on the fissility film, so-called with the thickness of stipulating.In addition, also can use the plastic film that the binding agent of normal temperature solid is coated in the band binding agent of single or double.And then, for example use the method for structure that Copper Foil directly is laminated to the single or double of polyimide film, can on polyimide film, electrode layer be set by binding agent.
Apply voltage in order between the 1st electrode layer-the 2nd electrode layer of electrostatic chuck apparatus of the present invention, to produce potential difference, then be adsorbed on the insulating properties film that body is attracted to the 1st electrode layer one side.Voltage applying mode, as long as can produce potential difference between the 1st electrode layer and the 2nd electrode layer, which kind of mode can be used.Promptly at the 1st electrode layer of adsorption plane one side configuration with between the 2nd electrode layer of base one side configuration, apply the voltage method of opposed polarity; With the 1st electrode layer ground connection (earth electrode), apply the plus or minus voltage method to the 2nd electrode layer; With the 2nd electrode layer ground connection, apply the plus or minus voltage method to the 1st electrode layer.But,, apply voltage method most preferably to the 2nd electrode layer with the 1st electrode layer ground connection.As take these modes, when in use being adsorbed when existing foreign matter or adsorption plane to produce flaw between body and the adsorption plane, also can prevent the generation of insulation breakdown.In the present invention, though the principle of adsorbing is indeterminate,, when using the electrode layer that constitutes by the conductive part that forms diagram shape, the gradient effect is found on the border of the insulation division between conductive part and conductive part, and to be absorption be adsorbed body by what insulating properties material etc. constituted in supposition.
Description of drawings
Fig. 1 is the pattern sectional view of an example of electrostatic chuck apparatus of the present invention.
Fig. 2 is the pattern sectional view of electrostatic chuck apparatus of the present invention with an example of electrode slice.
Fig. 3 is the pattern sectional view of dipolar electrostatic chuck device in the past.
Fig. 4 is the plane graph of an example of the electrode layer that is made of the conductive part that forms diagram shape of expression.
Fig. 5 is the plane graph of the electrode layer that is made of the universe conductive part.
Fig. 6 is the plane graph of comb shape opposite electrode in the past.
Symbol description
The 1-insulating barrier, 2-the 1st electrode layer, 3-the 2nd electrode layer, 4-insulating properties film (insulator layer), 5-insulating properties film, 6-adhesive layer, 7-base, 8-anode electrode, 9-negative electrode, 10-electrode slice.
Embodiment
Below, for embodiment the present invention is described.But the present invention is not limited to these embodiment.
Embodiment 1 (making of electrostatic chuck apparatus)
On the two sides of polyimide film (eastern レ デ ュ Port Application society system, trade (brand) name: カ プ ト Application 200H, thick 50 μ m) by Copper Foil (mining industry society of Mitsui Metal Co., Ltd. system, the trade (brand) name: TQ-VLP) of the stacked thick 12 μ m of the adhesive film of thick 20 μ m.Then,, make the 1st electrode layer (shape shown in Figure 4) at a copper-clad surface by etching, the 1st electrode layer by the insulated part of the current-carrying part of wide 5mm and wide 5mm interconnected, the zone is that the comb poles of 90 * 90mm constitutes; Another copper-clad surface make by universe conductivity, after the zone is the 2nd electrode layer (shape shown in Figure 5) that constitutes of the electrode of 90 * 90mm, again on two electrode layer, adhesive film difference stacked polyimide film (カ プ ト Application 200H) by 20 μ m obtains electrode slice.
This electrode slice is cut off to after the size of stipulating, used on the aluminium backing of adhesive film of thick 20 μ m, be made into electrostatic chuck apparatus the 2nd electrode layer one side bonds to 5 * 100 * 100mm.
In addition, the adhesive film of above-mentioned bonding use is following adhesive film.With 1: 1 novolak phenol resin of weight ratio (clear and macromolecule society system, trade (brand) name: シ ョ ウ ノ one Le CKM-908A) and the composition of NBR (Japanese ゼ オ Application society system, trade (brand) name: Nipol 1001) use as binding agent.Said composition is dissolved in butanone, is mixed with amount of solid and is 30% binding agent coating, this applying coating behind the single face of liftability polyethylene terephthalate film (thick 38 μ m), 150 ℃ of following heat dryings 3 minutes, is made into the adhesive film of thick 20 μ m.
In addition, on the polyimide film or the adhesive film that carries out on the Copper Foil stacked, and Copper Foil that carries out on adhesive film or polyimide film is stacked, all under 150 ℃ of high temperature by continuous stacked enforcement.
Electrode slice and aluminium backing bonding undertaken by 150 ℃/30 minutes vacuum press, after the vacuum press operation, for the thermmohardening that makes binding agent finishes, carries out 150 ℃/12 hours heat treatment in the ventilation insulating box.
Except that the comb shape design alteration with the 1st electrode layer was the wide 2mm of conductivity part, the wide 2mm of insulating properties part, material and operating condition by similarly to Example 1 were made into electrostatic chuck apparatus.
Except that the comb shape design alteration with the 1st electrode layer was the wide 10mm of conductivity part, the wide 10mm of insulating properties part, material and operating condition by similarly to Example 1 were made into electrostatic chuck apparatus.
Except the employed polyimide film of adsorption plane is changed to カ プ ト Application 200H as ユ one ピ レ ッ Network ス 75S (emerging product society of space portion system, thick 75 μ m) in addition, material and the operating condition by similarly to Example 1 is made into electrostatic chuck apparatus.
Reference examples 1
At the single face of polyimide film (カ プ ト Application 200H, thick 50 μ m), by the Copper Foil (TQ-VLP) of the stacked thick 12 μ m of the adhesive film of thick 20 μ m.Then, by etching, (effective coverage of comb poles is 90 * 90mm), and makes the wide 2mm of being of insulated part will to be formed at copper-clad surface by 1 pair of comb shape opposite electrode (shape shown in Figure 6) that the 1st electrode (wide 2mm) and the 2nd electrode (wide 2mm) constitute.On electrode layer,, obtain the electrostatic chuck apparatus electrode slice again by the stacked polyimide film of the adhesive film of 20 μ m (カ プ ト Application 200H).
This electrostatic chuck apparatus is cut off to after the size of stipulating with electrode, used the adhesive film of thick 20 μ m that electrode slice is bonded on the aluminium backing of 5 * 100 * 100mm, be made into electrostatic chuck apparatus.
In addition, the method for operation of the adhesive film of use, each operation and condition are identical with embodiment 1.
Reference examples 2
Except design, the insulated part of the 1st electrode, the 2nd electrode and these electrodes is all changed to beyond the wide 1mm, by being made into electrostatic chuck apparatus with same material and the operating condition of reference examples 1 to the comb shape opposite electrode.
Reference examples 3
Except the employed polyimide film of adsorption plane is changed to カ プ ト Application 200H in addition, by being made into electrostatic chuck apparatus with same material and the operating condition of reference examples 1 as ユ one ピ レ ッ Network ス 75S (emerging product society of space portion system, thick 75 μ m).
The constituent material of the electrostatic chuck apparatus of the foregoing description 1～4 and reference examples 1～3 etc. concluded to record and narrate be table 1.
Table 1
| The adsorption plane material | The 1st electrode | Insulate between electrode | The 2nd electrode | The | |
| Embodiment | |||||
| 1 | カプトン 200H | Wide 5mm comb shape | 200H | Do not form figure | カプトン |
| Embodiment | |||||
| 2 | カプトン 200H | Wide 2mm comb shape | 200H | Do not form figure | カプトン |
| Embodiment | |||||
| 3 | カプトン 200H | Wide 10mm comb shape | 200H | Do not form figure | カプトン |
| Embodiment | |||||
| 4 | ユ one ピ レ ッ Network ス 75S | Wide 5mm comb shape | 200H | Do not form figure | カプトン 200H |
| Reference examples 1 | カプトン 200H | (wide 2mm comb shape) | カプトン 200H | ||
| Reference examples 2 | カプトン 200H | (wide 1mm comb shape) | カプトン 200H | ||
| Reference examples 3 | ユ one ピ レ ッ Network ス 75S | (wide 2mm comb shape) | カプトン 200H | ||
※ fills the adhesive film of 20 μ m at the interlayer of each constituent material of table.
The evaluation of the electrostatic chuck apparatus of making
Proof voltage
(in reference examples 1～3, being between the 1st electrode and the 2nd electrode) applies the voltage 5 minutes of 10KV potential difference between the 1st electrode layer and the 2nd electrode layer of electrostatic chuck apparatus, estimates voltage-resistent characteristic.Evaluation is implemented under the condition of 25 ℃ and 100 ℃, judges quality according to having or not insulation breakdown and applying the leakage current value of 5 minutes voltage before closing to an end.The result is expressed as table 2.
Table 2
| Apply voltage (KV) | 25 ℃ of evaluations | 100 ℃ of evaluations | ||||||
| The 1st electrode | The 2nd electrode | Insulation breakdown | Leakage current (μ A) | Judge | Insulation breakdown | Leakage current (μ A) | | |
| Embodiment | ||||||||
| 1 | +10 | 0(GND) | Do not have | 0.01 | ○ | Do not have | 0.20 | ○ |
| 0(GND) | +10 | Do not have | 0.01 | ○ | Do not have | 0.18 | ○ | |
| | +10 | 0(GND) | Do not have | 0.03 | ○ | Do not have | 0.25 | ○ |
| 0(GND) | +10 | Do not have | 0.02 | ○ | Do not have | 0.22 | ○ | |
| | +10 | 0(GND) | Do not have | 0.01 | ○ | Do not have | 0.17 | ○ |
| 0(GND) | +10 | Do not have | 0.01 | ○ | Do not have | 0.18 | ○ | |
| | +10 | 0(GND) | Do not have | 0.01 | ○ | Do not have | 0.20 | ○ |
| 0(GND) | +10 | Do not have | 0.01 | ○ | Do not have | 0.18 | ○ | |
| Reference examples 1 | One+10, another GND | Do not have | 0.27 | ○ | Do not have | 119 | △ | |
| Reference examples 2 | One+10, another GND | Do not have | 0.44 | ○ | Take place | Can not measure | × | |
| Reference examples 3 | One+10, another GND | Do not have | 0.23 | ○ | Do not have | 106 | △ | |
※ criterion: zero=leakage current value is less than 1 μ A, and △=leakage current value is greater than 1 μ A, *=insulation breakdown takes place.
In embodiment 1～4,, can confirm that also leakage current is very little, is keeping high-insulativity even under 100 ℃ condition.With respect to this, in reference examples 1～3, leakage current value is big also than embodiment 1～4 time, and particularly under 100 ℃ condition, insulation resistance significantly reduces, and in addition, in reference examples 2, insulation breakdown takes place.
Absorption affinity
(in reference examples 1～3, being between the 1st electrode and the 2nd electrode) applies the voltage of 5KV potential difference between the 1st electrode layer and the 2nd electrode layer of electrostatic chuck apparatus, estimates the characterization of adsorption to the alkali-free glass plate.Glass size is 0.3 * 80 * 80mm, measures glass is judged quality with 50mm/ minute the peel strength of speed when vertical direction is peeled off.In addition, measuring environment is 5 ℃/55%RH, and adsorption time is 1 minute.The result is expressed as table 3.
Table 3
| Apply voltage (KV) | Peel strength (N) | Judge | ||
| The 1st electrode | The | |||
| Embodiment | ||||
| 1 | +5 | 0(GND) | 10.6 | ○ |
| +2.5 | -2.5 | 9.5 | ○ | |
| 0(GND) | +5 | 10.2 | ○ | |
| | +5 | 0(GND) | 12.5 | ○ |
| +2.5 | -2.5 | 10.8 | ○ | |
| 0(GND) | +5 | 12.3 | ○ | |
| | +5 | 0(GND) | 6.8 | ○ |
| +2.5 | -2.5 | 6.1 | ○ | |
| 0(GND) | +5 | 6.7 | ○ | |
| | +5 | 0(GND) | 7.0 | ○ |
| +2.5 | -2.5 | 5.3 | ○ | |
| 0(GND) | +5 | 6.3 | ○ | |
| Reference examples 1 | One+5, another GND | 4.8 | △ | |
| One+2.5, another are 1 years old | 4.5 | △ | ||
| Reference examples 2 | One+5, another GND | 5.9 | ○ | |
| One+2.5, another are 1 years old | 6.4 | ○ | ||
| Reference examples 3 | One+5, another GND | 1.9 | × | |
| One+2.5, another are-2.5 years old | 2.1 | × | ||
※ criterion: zero=greater than 5N, △=3～5N, *=less than 3N.
In embodiment 1～4, find which embodiment has higher absorption affinity to alkali glass.With respect to this, learn from the result of reference examples 1 and 3 o'clock, when designing electrostatic chuck apparatus,, and do not use thin material to do adsorption plane if do the figure of comb shape opposite electrode meticulous in order to the ambipolar design of living, just can not get high absorption affinity.
Anti-injurious surface mark
At first, on the adsorption plane of electrostatic chuck apparatus, dispense the alkali-free glass fragment of the long about 1mm in limit, (load that is applied on the glass plate is 0.6N/cm to use the flat weight of alkali-free glass plate, the 4Kg of 0.3 * 80 * 80mm to apply static load more successively
2).
Then, just carry under the state of weight to the direction sliding glass plate 1cm of electrode pattern quadrature, scratch adsorption plane after, glass is turned back to original position, carrying the potential difference that applies 10KV under the state of weight to electrostatic chuck apparatus, investigating and have or not insulation breakdown.The result is expressed as table 4.
Table 4
| Apply voltage (KV) | Insulation breakdown | Judge | ||
| The 1st electrode | The | |||
| Embodiment | ||||
| 1 | +10 | 0(GND) | Take place | × |
| +5 | -5 | Take place | × | |
| 0(GND) | +10 | Do not take place | ○ | |
| | +10 | 0(GND) | Take place | × |
| +5 | -5 | Take place | × | |
| 0(GND) | +10 | Do not take place | ○ | |
| | +10 | 0(GND) | Take place | × |
| +5 | -5 | Take place | × | |
| 0(GND) | +10 | Do not take place | ○ | |
| | +10 | 0(GND) | Take place | × |
| +5 | -5 | Do not take place | ○ | |
| 0(GND) | +10 | Do not take place | ○ | |
※ criterion: zero=naked is destroyed, *=the generation insulation breakdown.
In embodiment 1～4, by with the 1st electrode layer ground connection (GND), apply voltage to the 2nd electrode layer, the insulation breakdown because of the adsorption plane scar does not take place in affirmation.
Claims (12)
1. electrostatic chuck apparatus electrode slice, it is characterized in that the insulating barrier that is made of the insulating properties material, the 1st electrode layer and the 2nd electrode layer that are provided with on the two sides of this insulating barrier that is used to produce potential difference by this insulating barrier, the insulating properties film that covers these 2 electrode layer surface constitute.
2. electrostatic chuck apparatus electrode slice as claimed in claim 1 is characterized in that the 1st electrode layer is made of the conductive part that forms diagram shape.
3. electrostatic chuck apparatus electrode slice as claimed in claim 1 is characterized in that, the 1st electrode layer and the 2nd electrode are made of the metal forming of thickness smaller or equal to 150 μ m.
4. electrostatic chuck apparatus electrode slice as claimed in claim 1 is characterized in that, the insulating barrier that is made of the insulating properties material is the polyimide film of thick 12.5～300 μ m.
5. electrostatic chuck apparatus electrode slice as claimed in claim 1 is characterized in that, the insulating properties film that covers the 1st electrode layer and the 2nd electrode layer surface is made of the polyimide film of thick 12.5～300 μ m.
6. electrostatic chuck apparatus, it is characterized in that, the electrode slice that the 1st electrode layer and the 2nd electrode layer that will be provided with on the two sides of this insulating barrier that is used to produce potential difference by the insulating barrier that is made of the insulating properties material, by this insulating barrier, the insulating properties film that covers these 2 electrode layer surface constitute is bonded in base, and makes the 2nd electrode layer be positioned at base one side.
7. electrostatic chuck apparatus as claimed in claim 6 is characterized in that the 1st electrode layer is made of the conductive part that forms diagram shape.
8. electrostatic chuck apparatus as claimed in claim 6 is characterized in that, the 1st electrode layer and the 2nd electrode are made of the metal forming of thickness smaller or equal to 150 μ m.
9. electrostatic chuck apparatus as claimed in claim 6 is characterized in that, the insulating barrier that is made of the insulating properties material is the polyimide film of thick 12.5～300 μ m.
10. electrostatic chuck apparatus as claimed in claim 6 is characterized in that, the insulating properties film that covers the 1st electrode layer and the 2nd electrode layer surface is made of the polyimide film of thick 12.5～300 μ m.
11. the adsorption method that is adsorbed body of an electrostatic chuck apparatus, it is characterized in that, with the 1st electrode layer of the described electrostatic chuck apparatus of claim 6 and a ground connection in the 2nd electrode layer, apply voltage to another, thereby will be adsorbed on the insulating properties film that body is adsorbed on the 1st electrode layer one side.
12. adsorption method as claimed in claim 11 is characterized in that, with the 1st electrode layer ground connection.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003289934A JP4057977B2 (en) | 2003-08-08 | 2003-08-08 | Electrode sheet for electrostatic chuck device, electrostatic chuck device and adsorption method |
| JP2003289934 | 2003-08-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1581460A true CN1581460A (en) | 2005-02-16 |
| CN1319144C CN1319144C (en) | 2007-05-30 |
Family
ID=34368109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100700363A Active CN1319144C (en) | 2003-08-08 | 2004-08-05 | Electrode piece for electrostatic chuck, electrostatic chuck device and its adsorptiong method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4057977B2 (en) |
| KR (1) | KR100614021B1 (en) |
| CN (1) | CN1319144C (en) |
| TW (1) | TWI242256B (en) |
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| CN100407397C (en) * | 2005-07-14 | 2008-07-30 | 东京毅力科创株式会社 | Static adsorption electrode, substrate processing device and production method of static adsorption electrode |
| CN101326627B (en) * | 2005-12-06 | 2010-06-09 | 创意科技股份有限公司 | Electrode sheet for electrostatic chuck, and electrostatic chuck |
| CN101218668B (en) * | 2005-07-08 | 2010-11-03 | 创意科技股份有限公司 | Electrostatic chuck and electrode sheet for electrostatic chuck |
| CN1994839B (en) * | 2006-01-05 | 2012-07-18 | 财团法人工业技术研究院 | Static adsorption device |
| CN104124127A (en) * | 2013-04-27 | 2014-10-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pallet and plasma processing equipment |
| CN106666870A (en) * | 2017-02-23 | 2017-05-17 | 际华三五四三针织服饰有限公司 | Anti-smog mask |
| CN106796914A (en) * | 2014-10-17 | 2017-05-31 | 住友大阪水泥股份有限公司 | Electrostatic chuck apparatus |
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| CN108551713A (en) * | 2018-03-30 | 2018-09-18 | 成都同明新材料技术有限公司 | A kind of Electrostatic Absorption panel |
| CN110127379A (en) * | 2018-02-08 | 2019-08-16 | 丰田自动车株式会社 | Handling device using Electrostatic Absorption and the method for carrying using Electrostatic Absorption |
| CN112512945A (en) * | 2018-08-02 | 2021-03-16 | 创意科技股份有限公司 | Electrostatic absorption body |
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| KR100965407B1 (en) | 2006-03-06 | 2010-06-24 | 엘아이지에이디피 주식회사 | Electrostatic Chuck having multi-electrode pattern |
| JP4976915B2 (en) | 2007-05-08 | 2012-07-18 | 新光電気工業株式会社 | Electrostatic chuck and method of manufacturing electrostatic chuck |
| JP4126084B1 (en) * | 2007-07-23 | 2008-07-30 | 信越エンジニアリング株式会社 | Method for controlling surface potential of electrostatic chuck |
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| TWI765518B (en) * | 2021-01-07 | 2022-05-21 | 財團法人工業技術研究院 | Electrostatic chuck and method for manufacturing the same |
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| JPS5928354A (en) * | 1982-08-10 | 1984-02-15 | Toshiba Corp | Thin film for electrostatic chuck |
| JPH0227748A (en) * | 1988-07-16 | 1990-01-30 | Tomoegawa Paper Co Ltd | Electrostatic chucking device and forming method therefor |
| JP3238925B2 (en) * | 1990-11-17 | 2001-12-17 | 株式会社東芝 | Electrostatic chuck |
| JPH05226462A (en) * | 1992-02-18 | 1993-09-03 | Fujitsu Ltd | Electrostatic chuck |
| JPH06244147A (en) * | 1993-02-16 | 1994-09-02 | Tokyo Electron Ltd | Plasma treating device |
| JP3311812B2 (en) * | 1993-04-09 | 2002-08-05 | 東京エレクトロン株式会社 | Electrostatic chuck |
| US5646814A (en) * | 1994-07-15 | 1997-07-08 | Applied Materials, Inc. | Multi-electrode electrostatic chuck |
| CN1178392A (en) * | 1996-09-19 | 1998-04-08 | 株式会社日立制作所 | Electrostatic chucks and method and apparatus for treating samples using the chucks |
| JPH10125769A (en) * | 1996-10-21 | 1998-05-15 | Matsushita Electron Corp | Electrostatic chuck electrode structure |
| AU4516701A (en) * | 1999-12-09 | 2001-06-18 | Saint-Gobain Ceramics And Plastics, Inc. | Electrostatic chucks with flat film electrode |
| KR100427459B1 (en) * | 2001-09-05 | 2004-04-30 | 주성엔지니어링(주) | Electro-static chuck for preventing arc |
| JP2003243493A (en) * | 2002-02-15 | 2003-08-29 | Taiheiyo Cement Corp | Bipolar electrostatic chuck |
-
2003
- 2003-08-08 JP JP2003289934A patent/JP4057977B2/en not_active Expired - Lifetime
-
2004
- 2004-07-31 KR KR1020040060680A patent/KR100614021B1/en not_active IP Right Cessation
- 2004-08-05 CN CNB2004100700363A patent/CN1319144C/en active Active
- 2004-08-05 TW TW093123479A patent/TWI242256B/en active
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| CN101218668B (en) * | 2005-07-08 | 2010-11-03 | 创意科技股份有限公司 | Electrostatic chuck and electrode sheet for electrostatic chuck |
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| CN104124127A (en) * | 2013-04-27 | 2014-10-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pallet and plasma processing equipment |
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| CN106796914B (en) * | 2014-10-17 | 2020-07-14 | 住友大阪水泥股份有限公司 | Electrostatic chuck device |
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| CN112512945A (en) * | 2018-08-02 | 2021-03-16 | 创意科技股份有限公司 | Electrostatic absorption body |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN1319144C (en) | 2007-05-30 |
| JP2005064105A (en) | 2005-03-10 |
| TWI242256B (en) | 2005-10-21 |
| JP4057977B2 (en) | 2008-03-05 |
| KR20050018606A (en) | 2005-02-23 |
| KR100614021B1 (en) | 2006-08-23 |
| TW200516690A (en) | 2005-05-16 |
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