CN1575089A - Plasma chamber - Google Patents

Plasma chamber Download PDF

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Publication number
CN1575089A
CN1575089A CNA2004100372015A CN200410037201A CN1575089A CN 1575089 A CN1575089 A CN 1575089A CN A2004100372015 A CNA2004100372015 A CN A2004100372015A CN 200410037201 A CN200410037201 A CN 200410037201A CN 1575089 A CN1575089 A CN 1575089A
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CN
China
Prior art keywords
voltage
impedance matching
power supply
frequency
bias
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2004100372015A
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Chinese (zh)
Other versions
CN1267769C (en
Inventor
崔熙焕
金湘甲
姜聖哲
宋仁虎
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication date
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Publication of CN1575089A publication Critical patent/CN1575089A/en
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Publication of CN1267769C publication Critical patent/CN1267769C/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

The present invention relates to a plasma chamber comprising a lower electrode and an upper electrode, and used for dry-etching an LCD, comprises a main power supply comprising a main power source to generate a main voltage having a predetermined main frequency, and a first impedance matching circuit to impedance-match the main voltage; a bias power supply comprising a bias power source to generate a bias voltage having a predetermined bias frequency, and a second impedance matching circuit to impedance-match the bias voltage; and a mixer connected to both the first impedance matching circuit and the second impedance matching circuit, receiving and mixing the main voltage and the bias voltage, and outputting the mixed voltage to one of the lower electrode and the upper electrode. With this configuration, the present invention provides a plasma chamber in which etching conditions such as an etching rate, an etching profile, a selection ratio, etc. are precisely adjusted.

Description

The plasma casing
Cross-reference to related applications
The application requires the priority of the korean patent application submitted to Korea S Department of Intellectual Property on June 12nd, 2003 2003-38023 number, and its disclosed content is hereby expressly incorporated by reference.
Technical field
The present invention relates to a kind of plasma casing, in more detail, relate to a kind of capacitive coupling plasma (CCP) casing that is used for dry ecthing.
Background technology
In making the LCD process, forming isoionic method has capacitive coupling plasma (CCP) method, inductive couple plasma (ICP) method etc.Particularly, can form high-density plasma by inductive couple plasma (ICP) method that produces isoionic induction field, and it is easy to control the ion energy by utilizing grid bias power supply, therefore is widely used.On the other hand, though the CCP method forms the low-density plasma than ICP method, because of it has the simple advantage of equipment, so be extensive use of in fields such as dry ecthings.
Fig. 1 shows and utilizes the isoionic conventional dry etch device of capacitive coupling.
As shown in Figure 1, device for dry etching 100 comprises capacitive coupling plasma casing 110 and main power source portion 120.
Capacitive coupling plasma casing 110 comprises receiver 111, lower electrode 112 and upper electrode 113.
Receiver 111 is arranged on the lower member of CCP plasma casing 110 inside and supports the panel that is used for etching and scribbles photosensitive material.Lower electrode 112 contact receiver 111 bottoms also provide power for receiver 111.Upper electrode 113 is arranged on the upper member of CCP plasma casing 110 inside, and as with reference to electrode with respect to lower electrode 112 ground connection.
Main power source portion 120 comprises main power source 121 and impedance matching circuit 122.
Main power source 121 is interchange (AC) power with preset frequency and predetermined amplitude, and is connected with lower electrode 112.Impedance matching circuit 122 is connected electrically between lower electrode 112 and the main power source 121, and prevents that the AC power that applies from main power source 121 is reverse at lower electrode 112.
With regard to this configuration, the device for dry etching 100 of following operation with traditional.
At first, the reaction panel is installed on receiver 111.Then, eject all gas in CCP plasma casing 110 by the exhaust outlet (not shown), be evacuated thereby make in the CCP plasma casing 110 with the vacuum pump (not shown).Therefore, inject reacting gas by the inlet (not shown) to CCP plasma casing 110.
After finishing the preparation that is used for etch process, AC power is provided and begins to carry out etching.
AC power is provided for lower electrode 112 from main power source 121, between lower electrode 112 and upper electrode 113, produces time-varying electric field.This time-varying electric field is separated into reacting gas ion, negative electrical charge, reaches atomic group.At this moment, ion carries out physical impacts and chemical reaction by electric power and the film that reacts panel, and atomic group carries out physical impacts and chemical reaction by diffusion and the film that reacts panel, thus the etching reaction panel.Particularly, under the situation of response ion(ic) etching (RIE, Responsive Ion Etching), because ion quickens by electric field and collides with film, so carry out anisotropic etching according to electric field.
Yet, in traditional device for dry etching 100, be used for amplitude and the frequency change of etched biasing electric field according to main power source 121.Therefore, be limited for accurate control such as rate of etch, etching section and selection than such etching condition.
Summary of the invention
Therefore, one aspect of the present invention is to provide a kind of plasma casing, wherein can accurately regulate such as rate of etch, etching section, reach and select than such etching condition.
Another aspect of the present invention and/or advantage partly will be illustrated in the following description and partly be become apparent from this description, or understand by enforcement of the present invention.
Above-mentioned and/or others of the present invention realize by a kind of plasma casing is provided, this plasma case body comprises lower electrode and upper electrode and is used for the dry ecthing LCD, comprise: main power source portion comprises main power source that is used to produce the principal voltage with predetermined basic frequency and first impedance matching circuit that is used for the impedance matching principal voltage; Grid bias power supply portion comprises grid bias power supply that is used to produce the bias-voltage with predetermined bias frequency and second impedance matching circuit that is used for the impedance matching bias-voltage; And frequency mixer, be connected, receive and mix principal voltage and bias-voltage with first impedance matching circuit with second impedance matching circuit, and an electrode output mixed-voltage in lower electrode and upper electrode.
According to an aspect of the present invention, this plasma case body also comprises at least one accessory power supply portion, this accessory power supply portion comprises the accessory power supply that is used to produce the boost voltage with preset frequency and is used for the auxiliary impedance matching circuit of impedance matching boost voltage, wherein frequency mixer is connected with the impedance matching circuit of accessory power supply portion, receive and mixing principal voltage, bias-voltage and boost voltage, and an output mixed-voltage in lower electrode and upper electrode.
According to an aspect of the present invention, frequency mixer receives voltage output mixed-voltage by addition.
According to an aspect of the present invention, bias frequency is lower than basic frequency.
Description of drawings
These and other aspect of the present invention and advantage will describe its preferred specific embodiment in detail by the reference accompanying drawing and become more apparent, wherein:
Fig. 1 utilizes the isoionic conventional dry etch schematic representation of apparatus of capacitive coupling; And
Fig. 2 is the schematic diagram that utilizes the isoionic device for dry etching of capacitive coupling according to the embodiment of the invention.
Embodiment
Now the present invention is more fully described with reference to embodiment and accompanying drawing, wherein same numeral is represented similar elements in full piece of writing specification.Description of drawings the present invention in order to reference is described embodiment below.
Fig. 2 is the schematic diagram that utilizes the isoionic device for dry etching of capacitive coupling according to the embodiment of the invention.
As shown in Figure 2, device for dry etching 1 comprises capacitive coupling plasma casing 10 and power supply unit 20.
Capacitive coupling plasma casing 10 comprises receiver 11, lower electrode 12, reaches upper electrode 13.Receiver 11 is arranged on the lower member of CCP plasma casing 10 inside and supports the panel that is used for etching and scribbles photosensitive material.Upper electrode 12 contacts receiver 11 bottoms and provides power to receiver 11.Upper electrode 13 is arranged on the upper member of CCP plasma casing 10 inside, and as with reference to electrode with respect to lower electrode 12 ground connection.
Power supply unit 20 comprises main power source portion 30, grid bias power supply portion 40, reaches frequency mixer 50.
Main power source portion 30 comprises the main power source 31 and first impedance matching circuit 32.Main power source 31 provides has predetermined angle frequency (ω 1) and predetermined amplitude (E 1) interchange (AC) power supply, and link to each other with frequency mixer 50.First impedance matching circuit 32 is connected between frequency mixer 50 and the main power source 31, and prevents to take place frequency mixer 50 oppositely from interchange (AC) power that main power source 31 applies.
Grid bias power supply portion 40 comprises the grid bias power supply 41 and second impedance matching circuit 42.Grid bias power supply 41 provides has predetermined angle frequency (ω 2) and predetermined amplitude (E 2) AC power, and link to each other with frequency mixer 50.Here, because heavy more particle is good more to low-frequency reaction.Therefore, preferably, cause the angular frequency (ω of the grid bias power supply 41 that ion and reaction panel collide 2) less than the angular frequency (ω of main power source 31 1).
Second impedance matching circuit 42 is connected between frequency mixer 50 and the grid bias power supply 41, and prevents that grid bias power supply 41 from causing direction in frequency mixer 50.
Frequency mixer 50 exchanges (AC) power respectively from the main power source 31 of main power source portion 30 and the grid bias power supply 41 of grid bias power supply portion 41, and to the predetermined mixing AC power of lower electrode 12 outputs.Provide frequency mixer 50 directly to be connected with grid bias power supply 41 so that provide two-way exchange (AC) power to two power supplys with main power source 31 to prevent lower electrode 12.At this, frequency mixer 50 is by mixing to come automatic power supply 31 and grid bias power supply portion 41 to exchange (AC) power accordingly such as the such operation of stack.In this embodiment, stack is used for mixing interchange (AC) power, but is to be appreciated that other operation also is applicable.
As follows from frequency mixer 50 to the voltage (Vo) of lower electrode 12 outputs.
Equation 1
Vo＝E 1cos(ω 1t)+E 2cos(ω 2t)
At this moment, if the angular frequency (ω of main power source 31 1) than the angular frequency (ω of grid bias power supply 41 2) when bigger, equation 1 is similar to following equation 2.
Equation 2
Vo=E 1Cos (ω 1T)+E 1+ (E 2-E 1) cos (ω 2T), ω wherein 1＞＞ω 2
The voltage (Vo) that is applied to lower electrode 12 comprises and is used to produce isoionic " E 1Cos (ω 1And " the E that is used to regulate etching condition t) " 1+ (E 2-E 1) cos (ω 2T) ".
This voltage that is used to regulate etching condition can be by providing at least one accessory power supply with preset frequency and predetermined amplitude, thereby control etching more accurately.
For example, main power source portion 30 provides the main power with 13.56MHz frequency, and grid bias power supply portion 40 provides the grid bias power supply of the frequency with several MHz or hundreds of kHz separately.Here, use frequency mixer 50 to be used to prevent intercouple and the reverse current that produces, have the different frequency power supply, and be used to provide main power source and grid bias power supply simultaneously when power supply with different frequency.
With regard to this configuration, following operation is according to traditional device for dry etching 1 of the embodiment of the invention.
At first, the reaction panel of coating photosensitive material is installed in the center of recipient 11.CCP plasma casing 10 is vacuumized, and reacting gas is injected CCP plasma casing 10.Then, the main power source 31 by power supply unit 20 and grid bias power supply 41 convert reacting gas to plasma.Then, ion is accelerated by electric field and collides with the film that reacts panel, and the part film that wherein is not coated with photosensitive material is by ion etching.
According to an aspect of the present invention, the frequency of grid bias power supply and amplitude can be changed, keep isoionic density to adjust such as rate of etch, etching section, to select the etching condition of this classes such as comparing.
In sum, the invention provides a kind of plasma casing, wherein will be, select the etching condition of this classes such as comparing accurately to adjust such as rate of etch, etching section.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within the claim scope of the present invention.

Claims (6)

1. a plasma casing comprises lower electrode and upper electrode, and is used for the dry ecthing LCD, it is characterized in that, comprising:
Main power source portion comprises main power source that is used to produce the principal voltage with predetermined basic frequency and first impedance matching circuit that is used for the described principal voltage of impedance matching;
Grid bias power supply portion comprises grid bias power supply that is used to produce the bias-voltage with predetermined bias frequency and second impedance matching circuit that is used for the described bias-voltage of impedance matching; And
Frequency mixer is connected, receives and mix described principal voltage and described bias-voltage with described first impedance matching circuit with described second impedance matching circuit, and an electrode in described lower electrode and described upper electrode is exported described mixed-voltage.
2. plasma casing according to claim 1, it is characterized in that, also comprise at least one accessory power supply portion, described accessory power supply portion comprises the accessory power supply that is used to produce the boost voltage with preset frequency and is used for the auxiliary impedance matching circuit of the described boost voltage of impedance matching, wherein
Described frequency mixer is connected with the described auxiliary impedance matching circuit of described accessory power supply portion, reception also mixes described principal voltage, described bias-voltage and described boost voltage, and a described mixed-voltage of output in described lower electrode and described upper electrode.
3. plasma casing according to claim 1 is characterized in that, described frequency mixer is exported described mixed-voltage by the described reception voltage of addition.
4. plasma casing according to claim 2 is characterized in that, described frequency mixer is exported described mixed-voltage by the described reception voltage of addition.
5. plasma casing according to claim 1 is characterized in that described bias frequency is lower than described basic frequency.
6. plasma casing according to claim 2 is characterized in that described bias frequency is lower than described basic frequency.
CNB2004100372015A 2003-06-12 2004-04-22 Plasma chamber Expired - Fee Related CN1267769C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2003-0038023 2003-06-12
KR1020030038023A KR100968571B1 (en) 2003-06-12 2003-06-12 plasma chamber
KR1020030038023 2003-06-12

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CN1267769C CN1267769C (en) 2006-08-02

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TW (1) TWI244672B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009086782A1 (en) * 2008-01-04 2009-07-16 Beijing Nmc Co., Ltd. A plasma processing apparatus
CN101043784B (en) * 2006-03-21 2011-01-26 显示器生产服务株式会社 Hybrid plasma reactor

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005088763A1 (en) * 2004-03-10 2005-09-22 Tokyo Electron Limited Distributor and distributing method, plasma processing system and method, and process for fabricating lcd
JP5514413B2 (en) 2007-08-17 2014-06-04 東京エレクトロン株式会社 Plasma etching method
JP5390846B2 (en) 2008-12-09 2014-01-15 東京エレクトロン株式会社 Plasma etching apparatus and plasma cleaning method
KR102475069B1 (en) * 2017-06-30 2022-12-06 삼성전자주식회사 Semiconductor manufacturing device, method for operating the same

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JP3220383B2 (en) * 1996-07-23 2001-10-22 東京エレクトロン株式会社 Plasma processing apparatus and method
US6043607A (en) * 1997-12-16 2000-03-28 Applied Materials, Inc. Apparatus for exciting a plasma in a semiconductor wafer processing system using a complex RF waveform
US6126778A (en) * 1998-07-22 2000-10-03 Micron Technology, Inc. Beat frequency modulation for plasma generation
US6642149B2 (en) * 1998-09-16 2003-11-04 Tokyo Electron Limited Plasma processing method
US20030094239A1 (en) * 2000-06-02 2003-05-22 Quon Bill H. Apparatus and method for improving electron ecceleration
JP3897582B2 (en) * 2000-12-12 2007-03-28 キヤノン株式会社 Vacuum processing method, vacuum processing apparatus, semiconductor device manufacturing method, and semiconductor device
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101043784B (en) * 2006-03-21 2011-01-26 显示器生产服务株式会社 Hybrid plasma reactor
WO2009086782A1 (en) * 2008-01-04 2009-07-16 Beijing Nmc Co., Ltd. A plasma processing apparatus

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CN1267769C (en) 2006-08-02
US20040250954A1 (en) 2004-12-16
TWI244672B (en) 2005-12-01
KR100968571B1 (en) 2010-07-08
TW200428466A (en) 2004-12-16
KR20040107743A (en) 2004-12-23

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Granted publication date: 20060802

Termination date: 20100422