1244672 玖、發明說明： I：發明戶斤屬之技術領域3 本申請案係請求2003年6月12日於韓國智慧財產局所 提申之韓國專利申請案第2003-38023號之權益，其之内容 5 係併於此以供參考。 發明領域 本發明係有關一種電漿室，且更有關一種用於乾钱刻 之電容性偶合電漿（CCP)室。 L· ]1 10 發明背景 在生產液晶顯示器（LCD)的製程中，電容性偶合電漿 (CCP)方法、感應偶合電漿（ICP)等方法係已被使用於形成 電漿。ICP方法（藉由使用感應電磁場以產生電漿）係特別被 廣泛使用，因為此方法能形成高密度的電漿，而且容易藉 15 使用偏壓能量，而控制離子能量。另一方面，與ICP方法比 較時，CCP方法係形成低密度電漿，但因為其具有使用簡 單設備等之優點，故亦被廣泛地用於蝕刻。 第1圖係概要顯示出一種使用電容偶合電漿之傳統乾 蝕刻設備。 20 如第1圖所示，一乾蝕刻設備100係包含一CCP電漿室 110和一主要電力供應器120。 該CCP電漿室110係包含一接收器111、一下電極112和 一上電極113。 該接收器111係被安置在CCP電漿室110内部之下部位 1244672 中，並支撐一面板，一用於蝕刻之光敏性材料係被施用於 該面板。下電極112係接觸該接收器111的底部並供應電力 至接收器111。上電極113係被安置於CCP電漿室110之内部 的上部位中，且被接地，以做為下電極112之參考電極。 5 該主要電力供應器120包含一主要電源121和一阻抗匹 配電路122。 主要電源121係供應具有預定頻率與預定振幅之交流 (AC)電流，且其係連接至下電極112。阻抗匹配電路122係 電氣連接於下電極112與主要電源121之間，並避免由主要 10 電源121所供應之AC電流於下電極112處逆回。 由於此結構，傳統的乾蝕刻設備100係以下列方式操 作。 首先，一反應面板係置放於接收器111上。而後，藉一 真空泵（未顯示），將幾乎所有的氣體經一排氣孔（未顯示）排 15 出CCP電漿室110，藉此真空化CCP電漿室110。而後，一反 應氣體係經一引導孔（未顯示）而饋進CCP電漿室110中。 於完成蝕刻製程的準備後，供應AC電源並開始蝕刻製 程。 當自主要電源121供應AC電源至下電極112時，會在下 20 電極112與上電極113間產生一隨時間變化的電場。此隨時 間變化的電場係將反應氣體分解成離子，負電荷與自由 基。於此，離子係藉電力而與反應面板之一薄膜物理碰撞 並產生物理反應，而自由基係藉擴散作用而與反應面板之 薄膜物理碰撞並產生化學反應，藉此蝕刻反應面板。特別 1244672 是在反應⑽子_(IRE)t，因_ 與薄膜碰撞，故非等向性_係依電場來進;=而加速且 然而，於傳統的乾钱刻設備 場係隨主要電源121之振幅及頻率而於飾刻的偏壓電 條件(諸如，側速率、_細 目此’對於姓刻 所限制。 4^)料確控制有 【發明内容】 發明概要 10 15 因此，本發明之-目的係在提供—種電 刻條件（諸如，#刻速率、餘刻查 至，、中餘 控。 亦選擇率等）係被準確調 本發明之其他目的及/或優點 、、 說明，且其部分將可由說明内容日B於下述之描述中部分 發明而得知。 、月…、貝了解，或可藉實施本 本發明之前述目的及/或其 室而達成，該電漿室包含-下+目的係藉提供—種電漿 乾蝕刻一 LCD，該電漿室包含·、 甩極，且適用於 有-主要電源(以產生-具有預6主要電力供應器，其含 一第-阻抗匹配電路（以阻抗_匹&主要頻率的主要電壓）及 供應器，其含有一偏壓電源（以產要电壓）’ 一偏壓電力 偏壓)及—第二阻抗匹配電路⑷纟—具有預定偏壓頻率的 混頻器，其係連接至該第且抗'匹配該偏壓）；以及一 電路，且接收並混合主要電壓=配電路與第二阻抗匹配 至下電極及上電極之一。/、壓，並將混合電壓輸出 20 1244672 依據本發明之一目的，電漿室更包含至少一輔助電力 供應器，該輔助電力供應器包括一輔助電源（以產生具有預 定頻率之輔助電壓）及一輔助阻抗匹配電路（以產生阻抗-匹 配輔助電壓），其中該混頻器係連接至輔助電力供應器之輔 5 助阻抗匹配電路，且接收並混合主要電壓、偏壓與輔助電 壓，並將混合電壓輸出至下電極與上電極之一。 依據本發明之一目的，混頻器係藉將所接收之電壓相 加而輸出該混合電壓。 依據本發明之一目的，偏壓頻率係低於主要頻率。 10 圖式簡單說明 本發明之其他目的及優點係將藉下列具體實施例之敘 述及所附隨之圖式而更清楚並更易於了解： 第1圖係為使用電容性偶合電漿之傳統乾蝕刻設備的 概要圖；以及 15 第2圖係為使用本發明一具體實施例之電容性偶合電 漿之乾蝕刻設備的概要圖。 I：實施方式】 較佳實施例之詳細說明 本發明之具體實施例將被清楚描述，其之例子係說明 20 於圖式中，其中，全文中相似的參考數字係指相似的元件。 具體實施例將描述於下，以參考圖式而解釋本發明。 第2圖係概要顯示一使用本發明一具體實施例之電容 性偶合電漿的乾蝕刻設備。 如第2圖所示，一乾姓刻設備1係包含一 CCP電榮室10 1244672 與一電源供應器20。 CCP電漿室1〇包含一接收器11，_下電極12與一上電 極13。接收器11係置放於CCP電襞室1 〇之内部下部位中， 並支樓一反應面板’遠反應面板係施加有一用於姓刻之光 敏性材料。下電極12係接觸接收器1丨的一底部。上電極^ 係置於CCP電漿室10之内部上部位中，並接地以作為下電 極12之參考電極。 電源供應器20包含一主要電力供應器3〇，一偏壓電力 供應器40與一混頻器5〇。 10 15 主要電力供應器30包含一主要電源31與一第一阻抗匹 _ :路32 .玄主要電源31係供應具有一預定角頻率(①ο與— 、振巾田(E】）之父流(AC)電力，且其係連接至混頻器％。第 抗叹配電路32係連接於混頻器5〇與主要電源31之間， 由主要电源31所供應之Ac電力於混頻器5〇處逆回。 偏C兒力供應器4〇係包含一偏壓電源4ι以及一第二阻 與— 路42。偏壓電源41係供應具有一預定角頻率(ω2) 刈於定振幅(Ε2)之交流(AC)電力，且其係連接至混鮮 :成於此’頻率愈低’-反應頻率之粒子愈重。因此，該 板碰撞之偏議41的難㈣較 '要电源3〗的角頻率（ωι)。 之間^"匹配$路4 2係連接於混頻器5 0與偏Μ電源41 逆回。W由偏屋電源41所供應之AC電源於混頻器50被 〉昆頻器5〇係分別接收源自主要電力供應器30之主要電 20 1244672 源31的AC電力與源自偏壓電力供應器40之偏壓電源41的 AC電力，並將一混合之預定AC電力輸出至下電極12。混頻 器50係被提供以防止主要電源31與偏壓電源41直接連接至 下電極12，而彼此供應AC電力至二電源。於此，混頻器50 5 係藉一操作方式（諸如，相加）而混合分別源自主要電源31 與偏壓電源41之AC電力。於此具體實施例中，相加係使用 於混合AC電力，但必須了解的是，亦可適用其他操作方式。 由混頻器50輸出至下電極12的電壓（Vo)係如下。 <方程式1> 10 Vo = EiCOsCcOit) + E2COS(C〇2t) 於主要電源31之角頻率（ω!)遠大於偏壓電源41之角頻 率（ω2)的例子中，〈方程式1>係接近下列〈方程式2>。 〈方程式2> 15 Vo = EiCOsCcOit) + E〗+ (ErEDcosCo^t)，其中 ω] >> ω2。 • 該供應至下電極12的電壓（Vo)係包括用於產生電漿之 “EiCosCcM)”與用於調整蝕刻條件之“E]+ (ErEDcosCcM)”。 該用於調整蝕刻條件之電壓可藉供應至少一具有預定 20 頻率與預定振幅之輔助電力而達成，藉此以更精確控制蝕 刻。 舉例言之，主要電力供應器30係供應具有13.56 MHz 頻率之主要電力，且偏壓電力供應器40係供應具有數MHz 至數百kHz頻率之偏壓電力。於此，混頻器50係用於防止一 10 1244672 逆：二，在具有不同頻率之電力彼此偶合時產生)，且 用於在相同時間下供應主要電力與偏壓電力。 r ==结構’本發明—具體實施例之乾_設備1 係以下列方式操作。 ψ /㈣有—光敏性材料之反應Φ板置於接收 :J 而後，真空化⑽電漿室10,並將一反應 10 漿室1G中。而後，藉電源供應器加之主要 迅源Z錢電源41，將反應氣體轉變成電漿。而後，離 子係错電場而加速，並與反應面板之—薄膜碰撞，里中， 未施有光敏性材料之薄膜的—部份係藉離子而姓刻。 忙據本《月之目的，偏㈣力之頻率與振幅可改 變’以調控侧條件(諸如’ _速率、_軌跡、選擇率 等），以維持電漿密度。 如則述，本發明係提供_種電漿室，其中㈣條件(諸 15如’姓刻速率、兹刻執跡、選擇率等）係被準確調控。 雖然僅顯示與說明本發明之少許具體實施例，但孰於 此技者必須了解的是，其可在不偏離本發明之原理與精神 下，進行此等具體實施例的變化，其之範圍係界定於後附 之申请專利範圍及其等之等效範圍中。 20 【圖式簡單說明】 第1圖係為使用電容性偶合電漿之傳統乾姓刻設備的 概要圖；以及 "第2圖係為使用本發明—具體實施例之電容性偶合電 漿之乾餘刻設備的概要圖。 1244672 【圖式之主要元件代表符號表】 卜100 乾姓刻設備 10、110 CCP電漿室 11 > 111 接收器 12 、 112 下電極 13 、 113 上電極 20 電源供應器 30、120 主要電力供應器 31 > 121 主要電源 32、122 第一阻抗匹配電路 40 偏壓電力供應為 41 偏壓電源 42 第二阻抗匹配電路 50 混頻器 121244672 发明 Description of the invention: I: The technical field of the inventor 3 This application is for the benefit of Korean Patent Application No. 2003-38023 filed with the Korean Intellectual Property Office on June 12, 2003, among which Content 5 is here for reference. FIELD OF THE INVENTION The present invention relates to a plasma chamber, and more particularly to a capacitive coupling plasma (CCP) chamber for dry money engraving. L ·] 1 10 BACKGROUND OF THE INVENTION In the manufacturing process of liquid crystal display (LCD), capacitive coupling plasma (CCP) method, inductively coupled plasma (ICP) and other methods have been used to form the plasma. The ICP method (by using an induced electromagnetic field to generate a plasma) is particularly widely used because it can form a high-density plasma and it is easy to control the ion energy by using bias energy. On the other hand, when compared with the ICP method, the CCP method forms a low-density plasma, but because it has the advantage of using simple equipment, it is also widely used for etching. Fig. 1 schematically shows a conventional dry etching apparatus using a capacitor coupling plasma. 20 As shown in FIG. 1, a dry etching apparatus 100 includes a CCP plasma chamber 110 and a main power supply 120. The CCP plasma chamber 110 includes a receiver 111, a lower electrode 112, and an upper electrode 113. The receiver 111 is disposed in the lower portion 1244672 inside the CCP plasma chamber 110, and supports a panel, and a photosensitive material for etching is applied to the panel. The lower electrode 112 contacts the bottom of the receiver 111 and supplies power to the receiver 111. The upper electrode 113 is disposed in an upper portion inside the CCP plasma chamber 110 and is grounded as a reference electrode of the lower electrode 112. 5 The main power supply 120 includes a main power source 121 and an impedance matching circuit 122. The main power source 121 supplies an alternating current (AC) current having a predetermined frequency and a predetermined amplitude, and is connected to the lower electrode 112. The impedance matching circuit 122 is electrically connected between the lower electrode 112 and the main power source 121, and prevents the AC current supplied by the main power source 121 from reversing at the lower electrode 112. Due to this structure, the conventional dry etching apparatus 100 operates in the following manner. First, a response panel is placed on the receiver 111. Then, a vacuum pump (not shown) is used to exhaust almost all the gas out of the CCP plasma chamber 110 through an exhaust hole (not shown), thereby vacuumizing the CCP plasma chamber 110. Then, a reaction gas system is fed into the CCP plasma chamber 110 through a guide hole (not shown). After the preparation of the etching process is completed, AC power is supplied and the etching process is started. When AC power is supplied from the main power source 121 to the lower electrode 112, an electric field that changes with time is generated between the lower electrode 112 and the upper electrode 113. The time-varying electric field decomposes the reactive gas into ions, negative charges and free radicals. Here, ions physically collide with a thin film of the reaction panel and generate a physical reaction by electric power, and free radicals physically collide with a thin film of the reaction panel and generate a chemical reaction by diffusion, thereby etching the reaction panel. In particular, 1244672 is responding to the ⑽ (IRE) t, because _ collides with the film, so the anisotropy _ is based on the electric field; = accelerates, however, the field of traditional dry money engraving equipment follows the main power source 121 The amplitude and frequency of the bias electrical conditions (such as side rate, _detailed this is limited to the last name engraving. 4 ^) is indeed controlled [Summary of the Invention] Summary of the Invention 10 15 Therefore, the present invention- The purpose is to provide—a kind of electric engraving conditions (such as #cut rate, remaining time to search, medium control. Also select rate, etc.) is to accurately adjust the other purposes and / or advantages of the present invention, description, and Part of it will be known from the description of Part B of the invention in the description below. ， 月 …… ， 贝 understand, or can be achieved by implementing the aforementioned purpose of the present invention and / or its room, the plasma chamber contains-down + purpose is provided by-a plasma dry etching a LCD, the plasma chamber contains ·, Pole-stripping, and is suitable for the main power supply (to produce-with pre 6 main power supply, which contains a first-impedance matching circuit (main voltage with impedance _ main & main frequency) and the power supply, which Contains a bias power supply (to produce the required voltage) 'a bias power bias) and-a second impedance matching circuit-a mixer with a predetermined bias frequency, which is connected to the first and anti-'match the A bias voltage); and a circuit that receives and mixes the main voltage = the matching circuit and the second impedance are matched to one of the lower electrode and the upper electrode. /, And output a mixed voltage 20 1244672 According to an object of the present invention, the plasma chamber further includes at least one auxiliary power supply, the auxiliary power supply includes an auxiliary power source (to generate an auxiliary voltage having a predetermined frequency) and An auxiliary impedance matching circuit (to generate an impedance-matched auxiliary voltage), wherein the mixer is connected to the auxiliary 5 auxiliary impedance matching circuit of the auxiliary power supply, and receives and mixes the main voltage, the bias voltage and the auxiliary voltage, and The mixed voltage is output to one of the lower electrode and the upper electrode. According to an object of the present invention, the mixer outputs the mixed voltage by adding the received voltages. According to an object of the present invention, the bias frequency is lower than the main frequency. 10 Schematic illustrations of other objects and advantages of the present invention will be made clearer and easier to understand with the description of the following specific embodiments and the accompanying drawings: Figure 1 is a conventional drying using capacitive coupling plasma 15 is a schematic diagram of a dry etching apparatus using a capacitive coupling plasma according to a specific embodiment of the present invention. I: Embodiment] Detailed description of the preferred embodiment The specific embodiment of the present invention will be described clearly. An example thereof is illustrated in the drawings. In the drawings, similar reference numerals refer to similar elements throughout. Specific embodiments will be described below to explain the present invention with reference to the drawings. Fig. 2 schematically shows a dry etching apparatus using a capacitive coupling plasma of a specific embodiment of the present invention. As shown in FIG. 2, a engraving device 1 includes a CCP electric room 10 1244672 and a power supply 20. The CCP plasma chamber 10 includes a receiver 11, a lower electrode 12 and an upper electrode 13. The receiver 11 is placed in the lower part of the inner part of the CCP electric chamber 10, and a reaction panel on the side wall of the building is provided with a photosensitive material for inscription. The lower electrode 12 contacts a bottom of the receiver 1 丨. The upper electrode ^ is placed in the inner upper portion of the CCP plasma chamber 10 and is grounded as a reference electrode for the lower electrode 12. The power supply 20 includes a main power supply 30, a bias power supply 40 and a mixer 50. 10 15 The main power supply 30 includes a main power source 31 and a first impedance _: Road 32. The main power source 31 of the mystery supplies a parent stream having a predetermined angular frequency (①οand—, Zhenjin Tian (E)) ( AC) power, and it is connected to the mixer%. The first anti-match circuit 32 is connected between the mixer 50 and the main power source 31, and the Ac power supplied by the main power source 31 is connected to the mixer 5. The reverse bias power supply 40 series includes a bias power supply 4m and a second resistance AND circuit 42. The bias power supply 41 series supplies a predetermined angular frequency (ω2) 刈 to a fixed amplitude (E2). Alternating current (AC) power, and it is connected to the mixed fresh: the 'lower the frequency'-the heavier the particles of the reaction frequency. Therefore, the difficulty of the board's collision 41 is more difficult than the 'power 3' Angular frequency (ωι). Between ^ " matching 4 way 2 is connected to the mixer 50 and the bias M power supply 41 is reversed. W AC power supplied by the biased house power supply 41 is applied to the mixer 50> The frequency converter 50 receives AC power from the main power source 20 1244672 source 31 of the main power supply 30 and AC power from the bias power source 41 of the bias power supply 40, respectively. And outputs a mixed predetermined AC power to the lower electrode 12. The mixer 50 is provided to prevent the main power source 31 and the bias power source 41 from being directly connected to the lower electrode 12 and supply AC power to the two power sources to each other. The mixer 50 5 mixes the AC power from the main power source 31 and the bias power source 41 by an operation method (such as addition). In this embodiment, the addition is used for the mixed AC power. But it must be understood that other operation methods are also applicable. The voltage (Vo) output from the mixer 50 to the lower electrode 12 is as follows. ≪ Equation 1 > 10 Vo = EiCOsCcOit) + E2COS (C〇2t) In the example where the angular frequency (ω!) Of the power source 31 is much larger than the angular frequency (ω2) of the bias power source 41, <Equation 1> is close to the following <Equation 2>. <Equation 2> 15 Vo = EiCOsCcOit) + E] + (ErEDcosCo ^ t), where ω] > ω2. • The voltage (Vo) supplied to the lower electrode 12 includes "EiCosCcM" for generating plasma and "E] + (ErEDcosCcM) for adjusting etching conditions. The voltage for adjusting the etching conditions can be achieved by supplying at least one auxiliary power having a predetermined frequency and a predetermined amplitude, thereby controlling the etching more accurately. For example, the main power supply 30 supplies main power having a frequency of 13.56 MHz, and the bias power supplier 40 supplies bias power having a frequency of several MHz to several hundreds of kHz. Here, the mixer 50 is used to prevent a 10 1244672 inverse: two, generated when power with different frequencies are coupled to each other), and used to supply the main power and the bias power at the same time. r == Structure 'The present invention-dry_device 1 of a specific embodiment operates in the following manner. ψ / ㈣ has-the reaction of the photosensitive material Φ plate is placed in the receiving: J, and then the vacuum plasma chamber 10 is vacuumed, and a reaction 10 is placed in the plasma chamber 1G. Then, by using the power supply and the main Xunyuan Z Qian power supply 41, the reaction gas was converted into a plasma. Then, the ion system accelerates with the wrong electric field and collides with the thin film of the reaction panel. Among them, the thin film without the photosensitive material is partially engraved with ions. According to the purpose of this month, the frequency and amplitude of the biasing force can be changed 'to adjust the side conditions (such as' _ rate, _ trajectory, selection rate, etc.) to maintain the plasma density. As stated, the present invention provides a plasma chamber in which the conditions (such as the nickname rate, the nickname, the selection rate, etc.) are accurately controlled. Although only a few specific embodiments of the present invention are shown and described, those skilled in the art must understand that they can make changes to these specific embodiments without departing from the principles and spirit of the present invention. It is defined in the attached patent application scope and its equivalent scope. 20 [Schematic description] Figure 1 is a schematic diagram of a conventional dry-engraving device using a capacitive coupling plasma; and " Figure 2 is a diagram of a capacitive coupling plasma using the present invention-a specific embodiment Outline drawing of dry-cut equipment. 1244672 [Representative symbols for the main components of the diagram] Bu 100 Dry name carving equipment 10, 110 CCP plasma chamber 11 > 111 Receiver 12, 112 Lower electrode 13, 113 Upper electrode 20 Power supply 30, 120 Main power supply 31 > 121 Main power supply 32, 122 First impedance matching circuit 40 Bias power supply is 41 Bias power supply 42 Second impedance matching circuit 50 Mixer 12