CN1571169A - A solar cell - Google Patents
A solar cell Download PDFInfo
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- CN1571169A CN1571169A CN 03139914 CN03139914A CN1571169A CN 1571169 A CN1571169 A CN 1571169A CN 03139914 CN03139914 CN 03139914 CN 03139914 A CN03139914 A CN 03139914A CN 1571169 A CN1571169 A CN 1571169A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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Abstract
The invention provides a solar energy battery, for solving the problems of bad soakage of dye and semiconductor material in dye sensitized solar energy battery and low photoelectric conversion efficiency in existing technique, including a first electrode, a electrolyte and a second electrode, where the first electrode includes a conductive substrate, a semiconductor material layer and a photosencitizer layer, the semiconductor material layer is formed on the conductive substrate and includes many semiconductor tubes; the photosencitizer layer is formed on the semiconductor material layer. The invention provides an electrode of solar energy battery, including a conductive substrate, a semiconductor material layer and a photosencitizer layer, where the semiconductor material layer is formed on the conductive substrate and includes many semiconductor tubes; the photosencitizer layer is formed on the semiconductor material layer
Description
[technical field]
The present invention relates to a kind of solar cell, particularly a kind of dye sensitization solar battery electrode.
[background technology]
Solar cell is a kind of device that solar energy is converted into electric energy.The DSSC that nineteen nineties grows up adopts the nanometer film of wide bandgap semiconductor, utilizes the huge specific area of nanometer film, at a large amount of light-sensitive coloring agent of its surface adsorption, thereby can effectively absorb sunlight.
See also Fig. 1, on May 22nd, 2002, disclosed application number was that 01140225 Chinese invention patent application has disclosed a kind of solar cell electrode of nanometer crystal film and preparation method thereof.This electrode is substrate with wide bandgap semiconductor nanometer crystal film 20, at this substrate surface absorption layer of metal ion 30, absorption photosensitizer 40 on the adsorption of metal ions layer again.
Though this solar cell electrode of nanometer crystal film can be by the finishing of metal ion, improve the opto-electronic conversion performance of electrode, but this titanium dioxide nanocrystalline film forms in 200-600 ℃ of following sintering by the wide bandgap semiconductor colloid is coated on the transparent conduction base sheet, in this process, easily produce abnormal stacking, cause the wettability of dyestuff and titanium dioxide poor, cause photoelectric conversion efficiency to descend.
In view of this, provide the solar cell that wettability is good, photoelectric conversion efficiency is high of a kind of dyestuff and semi-conducting material and electrode of solar battery real for necessary.
[summary of the invention]
Be the problem that wettability is poor, photoelectric conversion efficiency is low of dyestuff and semi-conducting material in the DSSC that solves prior art, first purpose of the present invention is to provide the solar cell that wettability is good, photoelectric conversion efficiency is high of a kind of dyestuff and semi-conducting material.
Second purpose of the present invention is to provide the electrode of solar battery that wettability is good, photoelectric conversion efficiency is high of a kind of dyestuff and semi-conducting material.
For realizing first purpose of the present invention, the invention provides a kind of solar cell, comprise one first electrode, an electrolyte and one second electrode, this first electrode comprises a conductive substrate, semiconductor material layer and a photosensitizer layer, wherein: semiconductor material layer is formed on the conductive substrate, comprises a plurality of transistors; The photosensitizer layer is formed on the semiconductor material layer.
For realizing second purpose of the present invention, the invention provides a kind of electrode of solar battery, comprise a conductive substrate, semiconductor material layer and a photosensitizer layer, wherein, semiconductor material layer is formed on the conductive substrate, comprises a plurality of transistors; The photosensitizer layer is formed on the semiconductor material layer.
With respect to prior art, the present invention adopts semiconductor tube bank structure, and the contact area between increase dyestuff and semi-conducting material is strengthened the infiltration of dyestuff and semi-conducting material, thereby improves the electricity conversion of DSSC.
[description of drawings]
Fig. 1 is the schematic diagram of solar cell in the prior art;
Fig. 2 is for adopting the schematic diagram of solar cell provided by the invention and electrode.
[embodiment]
The present invention is described in further detail below in conjunction with accompanying drawing.
See also Fig. 2, solar cell 100 provided by the invention, it comprises: a smooth negative pole 2, an electrolyte (figure does not show), a light positive utmost point 7.Wherein, electrolyte can be iodine/lithium iodide electrolyte, and the light positive utmost point 7 can be a porous carbon electrodes or is coated with the conductive substrate of platinum layer.
Electrode of solar battery provided by the invention is that the light negative pole 2 of solar cell 100 comprises: conductive substrate 1, multiple semiconductor pipe 3, photosensitizer layer 5.Wherein, conductive substrate 1 can be a transparent conducting glass, adopts fluorine doping stannic oxide electro-conductive glass in the present embodiment.Transistor 3 can be nanotube or micron tube, is formed on the conductive substrate 1 by etching or chemical vapour deposition technique, is parallel to each other between the tube and tube, and is basically perpendicular to conductive substrate 1.The height H of this transistor 3 can be the 1-50 micron, and its material is a semiconductor material with wide forbidden band, as titanium dioxide, zinc oxide etc.Photosensitizer layer 5 can be a dye coating, present embodiment adopts cis-two thiocyanate radical-two (4,4 '-dicarboxylic acids-2,2 '-bipyridine) closes ruthenium cis-dithiocyanatobis (4,4 '-dicarboxy-2,2 '-bipyridine) ruthenium (abbreviating the N3 dyestuff as) is mixed with certain density solution or gel with it, by the mode of soaking it is adsorbed on the transistor 3, wherein dye particles can all have distribution in transistor 3 inside and outsides.
Before forming photosensitizer layer 5, can be in further on the semiconductor tube wall, forming one deck nano particle on the transistor 3 by deposition or sol-gel process, this nano particle can be the quantum dot of metal ion or semi-conducting material, in order to the infiltration of further reinforcement dyestuff and transistor.
In addition, those skilled in the art should be understood that the electric current-potential property of dye-sensitized semiconductor electrode depends on the electromotive force and the semi-conductive conduction level of oxidation-reduction pair in the redox energy level, electrolyte of dyestuff.So when condition changing, electrode of solar battery provided by the invention also can be the light positive utmost point of solar cell.
Because the present invention adopts semiconductor tube bank structure, increases the contact area between dyestuff and the semi-conducting material, and the infiltration of dyestuff and semi-conducting material is strengthened, thereby improves the electricity conversion of dye sensitization solar battery electrode.
Claims (10)
1. solar cell, comprise one first electrode, an electrolyte and one second electrode, wherein this first electrode comprises a conductive substrate, semiconductor material layer and a photosensitizer layer, semiconductor material layer is formed on the conductive substrate, the photosensitizer layer is formed on the semiconductor material layer, it is characterized in that semiconductor material layer comprises a plurality of transistors.
2. solar cell as claimed in claim 1 is characterized in that semiconductor material layer comprises titanium dioxide or zinc oxide.
3. solar cell as claimed in claim 1 is characterized in that transistor is formed on the conductive substrate by chemical vapour deposition technique or etching.
4. solar cell as claimed in claim 1 is characterized in that: first electrode further comprises one deck nano particle, and this layer nano particle is between transistor and photosensitizer layer, and nano particle is the quantum dot of metal ion or semi-conducting material.
5. solar cell as claimed in claim 1 is characterized in that transistor is semiconducting nanotubes or semiconductor microactuator mitron.
6. electrode of solar battery, comprise a conductive substrate, semiconductor material layer and a photosensitizer layer, semiconductor material layer is formed on the conductive substrate, and the photosensitizer layer is formed on the semiconductor material layer, it is characterized in that semiconductor material layer comprises a plurality of transistors.
7. electrode of solar battery as claimed in claim 6 is characterized in that: the photosensitizer layer is formed at semiconductor material layer by absorption, and the photosensitizer layer comprises a dye coating.
8. electrode of solar battery as claimed in claim 6 is characterized in that semiconductor material layer comprises titanium dioxide or zinc oxide.
9. electrode of solar battery as claimed in claim 6, it is characterized in that: electrode of solar battery further comprises one deck nano particle, this layer nano particle is between transistor and photosensitizer layer, and this nano particle is the quantum dot of metal ion or semi-conducting material.
10. electrode of solar battery as claimed in claim 6 is characterized in that transistor is semiconducting nanotubes or semiconductor microactuator mitron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031399142A CN100345311C (en) | 2003-07-19 | 2003-07-19 | A solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031399142A CN100345311C (en) | 2003-07-19 | 2003-07-19 | A solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1571169A true CN1571169A (en) | 2005-01-26 |
| CN100345311C CN100345311C (en) | 2007-10-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031399142A Expired - Fee Related CN100345311C (en) | 2003-07-19 | 2003-07-19 | A solar cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100355090C (en) * | 2005-04-21 | 2007-12-12 | 中山大学 | Stereo absorption filament integrated dye sensitization solar cell |
| WO2008055404A1 (en) * | 2006-11-10 | 2008-05-15 | Peking University | A dye sensitized solar battery and a working electrode thereof |
| CN101572189B (en) * | 2008-04-28 | 2012-09-05 | 比亚迪股份有限公司 | Semiconductor electrode for dye-sensitized solar cells, preparation method thereof and cell |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6479745B2 (en) * | 2000-01-26 | 2002-11-12 | Sharp Kabushiki Kaisha | Dye-sensitized solar cell and method of manufacturing the same |
| JP2002289272A (en) * | 2001-03-26 | 2002-10-04 | Sharp Corp | Pigment sensitized solar cell |
-
2003
- 2003-07-19 CN CNB031399142A patent/CN100345311C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100355090C (en) * | 2005-04-21 | 2007-12-12 | 中山大学 | Stereo absorption filament integrated dye sensitization solar cell |
| WO2008055404A1 (en) * | 2006-11-10 | 2008-05-15 | Peking University | A dye sensitized solar battery and a working electrode thereof |
| CN100505325C (en) * | 2006-11-10 | 2009-06-24 | 北京大学 | Dye sensitization solar cell and working electrode thereof |
| CN101572189B (en) * | 2008-04-28 | 2012-09-05 | 比亚迪股份有限公司 | Semiconductor electrode for dye-sensitized solar cells, preparation method thereof and cell |
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| Publication number | Publication date |
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| CN100345311C (en) | 2007-10-24 |
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| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20071024 Termination date: 20170719 |