CN100345311C - A solar cell - Google Patents

A solar cell Download PDF

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Publication number
CN100345311C
CN100345311C CNB031399142A CN03139914A CN100345311C CN 100345311 C CN100345311 C CN 100345311C CN B031399142 A CNB031399142 A CN B031399142A CN 03139914 A CN03139914 A CN 03139914A CN 100345311 C CN100345311 C CN 100345311C
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CN
China
Prior art keywords
electrode
material layer
semiconductor material
photosensitizer
layer
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Expired - Fee Related
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CNB031399142A
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Chinese (zh)
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CN1571169A (en
Inventor
黄全德
黄文正
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to CNB031399142A priority Critical patent/CN100345311C/en
Publication of CN1571169A publication Critical patent/CN1571169A/en
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Publication of CN100345311C publication Critical patent/CN100345311C/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells

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  • Hybrid Cells (AREA)

Abstract

In order to solve the problems of poor wettability and low photoelectric conversion efficiency of dye and semiconductor materials of dye-sensitized solar cells of the prior art, the present invention provides a solar cell which comprises a first electrode, an electrolyte and a second electrode, wherein the first electrode comprises a conductive substrate, a semiconductor material layer and a photosensitizer layer, the semiconductor material layer is formed on the conductive substrate and comprises a plurality of transistors, and the photosensitizer layer is formed on the semiconductor material layer. The present invention provides a solar cell electrode which comprises a conductive substrate, a semiconductor material layer and a photosensitizer layer, wherein the semiconductor material layer is formed on the conductive substrate and comprises a plurality of transistors, and the photosensitizer layer is formed on the semiconductor material layer.

Description

A kind of solar cell
[technical field]
The present invention relates to a kind of solar cell, particularly a kind of dye sensitization solar battery electrode.
[background technology]
Solar cell is a kind of device that solar energy is converted into electric energy.The DSSC that nineteen nineties grows up adopts the nanometer film of wide bandgap semiconductor, utilizes the huge specific area of nanometer film, at a large amount of light-sensitive coloring agent of its surface adsorption, thereby can effectively absorb sunlight.
See also Fig. 1, on May 22nd, 2002, disclosed application number was that 01140225 Chinese invention patent application has disclosed a kind of solar cell electrode of nanometer crystal film and preparation method thereof.This electrode is substrate with wide bandgap semiconductor nanometer crystal film 20, at this substrate surface absorption layer of metal ion 30, absorption photosensitizer 40 on the adsorption of metal ions layer again.
Though this solar cell electrode of nanometer crystal film can be by the finishing of metal ion, improve the opto-electronic conversion performance of electrode, but this titanium dioxide nanocrystalline film forms in 200-600 ℃ of following sintering by the wide bandgap semiconductor colloid is coated on the transparent conduction base sheet, in this process, easily produce abnormal stacking, cause the wettability of dyestuff and titanium dioxide poor, cause photoelectric conversion efficiency to descend.
In view of this, provide the solar cell that wettability is good, photoelectric conversion efficiency is high of a kind of dyestuff and semi-conducting material and electrode of solar battery real for necessary.
[summary of the invention]
Be the problem that wettability is poor, photoelectric conversion efficiency is low of dyestuff and semi-conducting material in the DSSC that solves prior art, first purpose of the present invention is to provide the solar cell that wettability is good, photoelectric conversion efficiency is high of a kind of dyestuff and semi-conducting material.
Second purpose of the present invention is to provide the electrode of solar battery that wettability is good, photoelectric conversion efficiency is high of a kind of dyestuff and semi-conducting material.
For realizing first purpose of the present invention, the invention provides a kind of solar cell, comprise one first electrode, an electrolyte and one second electrode, this first electrode comprises a conductive substrate, semiconductor material layer and a photosensitizer layer, wherein: semiconductor material layer is formed on the conductive substrate, comprises a plurality of semiconducting nanotubes or semiconductor microactuator mitron; Photosensitizer is distributed in inside and outside semiconducting nanotubes or the semiconductor microactuator mitron.
For realizing second purpose of the present invention, the invention provides a kind of electrode of solar battery, comprise a conductive substrate, semiconductor material layer and a photosensitizer layer, wherein, semiconductor material layer is formed on the conductive substrate, comprises a plurality of semiconducting nanotubes or semiconductor microactuator mitron; Photosensitizer is distributed in inside and outside semiconducting nanotubes or the semiconductor microactuator mitron.
With respect to prior art, the present invention adopts semiconductor tube bank structure, increases the contact area between dyestuff and the semi-conducting material, and the infiltration of dyestuff and semi-conducting material is strengthened, thereby improves the electricity conversion of DSSC.
[description of drawings]
Fig. 1 is the schematic diagram of solar cell in the prior art;
Fig. 2 is for adopting the schematic diagram of solar cell provided by the invention and electrode.
[embodiment]
The present invention is described in further detail below in conjunction with accompanying drawing.
See also Fig. 2, solar cell 100 provided by the invention, it comprises: a smooth negative pole 2, an electrolyte (figure does not show), a light positive utmost point 7.Wherein, electrolyte can be iodine/lithium iodide electrolyte, and the light positive utmost point 7 can be a porous carbon electrodes or is coated with the conductive substrate of platinum layer.
Electrode of solar battery provided by the invention is that the light negative pole 2 of solar cell 100 comprises: conductive substrate 1, multiple semiconductor pipe 3, photosensitizer layer 5.Wherein, conductive substrate 1 can be a transparent conducting glass, adopts fluorine doping stannic oxide electro-conductive glass in the present embodiment.Transistor 3 can be nanotube or micron tube, is formed on the conductive substrate 1 by etching or chemical vapour deposition technique, is parallel to each other between the tube and tube, and is basically perpendicular to conductive substrate 1.The height H of this transistor 3 can be the 1-50 micron, and its material is a semiconductor material with wide forbidden band, as titanium dioxide, zinc oxide etc.Photosensitizer layer 5 can be a dye coating, present embodiment adopts cis-two thiocyanate radical-two (4,4 '-dicarboxylic acids-2,2 '-bipyridine) closes ruthenium cis-dithiocyanatobis (4,4 '-dicarboxy-2,2 '-bipyridine) ruthenium (abbreviating the N3 dyestuff as) is mixed with certain density solution or gel with it, by the mode of soaking it is adsorbed on the transistor 3, wherein dye particles can all have distribution in transistor 3 inside and outsides.
Before forming photosensitizer layer 5, can be in further on the semiconductor tube wall, forming one deck nano particle on the transistor 3 by deposition or sol-gel process, this nano particle can be the quantum dot of metal ion or semi-conducting material, in order to the infiltration of further reinforcement dyestuff and transistor.
In addition, those skilled in the art should be understood that the electric current-potential property of dye-sensitized semiconductor electrode depends on the electromotive force and the semi-conductive conduction level of oxidation-reduction pair in the redox energy level, electrolyte of dyestuff.So when condition changing, electrode of solar battery provided by the invention also can be the light positive utmost point of solar cell.
Because the present invention adopts semiconductor tube bank structure, increases the contact area between dyestuff and the semi-conducting material, and the infiltration of dyestuff and semi-conducting material is strengthened, thereby improves the electricity conversion of dye sensitization solar battery electrode.

Claims (8)

1. solar cell, comprise one first electrode, an electrolyte and one second electrode, wherein this first electrode comprises a conductive substrate, semiconductor material layer and a photosensitizer layer, semiconductor material layer is formed on the conductive substrate, it is characterized in that semiconductor material layer comprises a plurality of semiconducting nanotubes or semiconductor microactuator mitron, the photosensitizer layer is distributed in inside and outside semiconducting nanotubes or the semiconductor microactuator mitron.
2. solar cell as claimed in claim 1 is characterized in that semiconductor material layer comprises titanium dioxide or zinc oxide.
3. solar cell as claimed in claim 1 is characterized in that semiconducting nanotubes or semiconductor microactuator mitron are formed on the conductive substrate by chemical vapour deposition technique or etching.
4. solar cell as claimed in claim 1, it is characterized in that: first electrode further comprises one deck nano particle, this layer nano particle is between semiconducting nanotubes or semiconductor microactuator mitron and photosensitizer, and nano particle is the quantum dot of metal ion or semi-conducting material.
5. electrode of solar battery, comprise a conductive substrate, semiconductor material layer and a photosensitizer layer, semiconductor material layer is formed on the conductive substrate, it is characterized in that semiconductor material layer comprises a plurality of semiconducting nanotubes or semiconductor microactuator mitron, photosensitizer is distributed in inside and outside semiconducting nanotubes or the semiconductor microactuator mitron.
6. electrode of solar battery as claimed in claim 5 is characterized in that: in semiconductor material layer, the photosensitizer layer comprises a dye coating to the photosensitizer layer by absorption profiles.
7. electrode of solar battery as claimed in claim 5 is characterized in that semiconductor material layer comprises titanium dioxide or zinc oxide.
8. electrode of solar battery as claimed in claim 5, it is characterized in that: electrode of solar battery further comprises one deck nano particle, this layer nano particle is between semiconducting nanotubes or semiconductor microactuator mitron and photosensitizer, and this nano particle is the quantum dot of metal ion or semi-conducting material.
CNB031399142A 2003-07-19 2003-07-19 A solar cell Expired - Fee Related CN100345311C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB031399142A CN100345311C (en) 2003-07-19 2003-07-19 A solar cell

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Application Number Priority Date Filing Date Title
CNB031399142A CN100345311C (en) 2003-07-19 2003-07-19 A solar cell

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CN100345311C true CN100345311C (en) 2007-10-24

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100355090C (en) * 2005-04-21 2007-12-12 中山大学 Stereo absorption filament integrated dye sensitization solar cell
CN100505325C (en) * 2006-11-10 2009-06-24 北京大学 Dye sensitization solar cell and working electrode thereof
CN101572189B (en) * 2008-04-28 2012-09-05 比亚迪股份有限公司 Semiconductor electrode for dye-sensitized solar cells, preparation method thereof and cell

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010027806A1 (en) * 2000-01-26 2001-10-11 Ryosuke Yamanaka Dye-sensitized solar cell and method of manufacturing the same
JP2002289272A (en) * 2001-03-26 2002-10-04 Sharp Corp Pigment sensitized solar cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010027806A1 (en) * 2000-01-26 2001-10-11 Ryosuke Yamanaka Dye-sensitized solar cell and method of manufacturing the same
JP2002289272A (en) * 2001-03-26 2002-10-04 Sharp Corp Pigment sensitized solar cell

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